CN208174653U - A kind of driving circuit of field effect transistor - Google Patents
A kind of driving circuit of field effect transistor Download PDFInfo
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- CN208174653U CN208174653U CN201820729023.XU CN201820729023U CN208174653U CN 208174653 U CN208174653 U CN 208174653U CN 201820729023 U CN201820729023 U CN 201820729023U CN 208174653 U CN208174653 U CN 208174653U
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- 230000005669 field effect Effects 0.000 title claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 230000007423 decrease Effects 0.000 abstract description 7
- 238000007599 discharging Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 235000008434 ginseng Nutrition 0.000 description 1
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Abstract
The utility model discloses a kind of driving circuits of field effect transistor; including power supply, switching circuit, first capacitor C1 and metal-oxide-semiconductor; switching circuit includes control terminal, the first output end and second output terminal; when impedance between first output end and second output terminal tends to infinity; power supply charges through first resistor R1 and the first protection diode D1 to first capacitor C1, so that the metal-oxide-semiconductor is connected；When the output short-circuit of metal-oxide-semiconductor control; although output voltage is pulled low; but the impedance between the first output end and second output terminal remains unchanged; first capacitor C1 does not have discharge loop for discharging; the charge release stored on first capacitor C1 is very slow; the both end voltage decline of first capacitor C1 is very slow; the driving voltage of metal-oxide-semiconductor remains unchanged; metal-oxide-semiconductor maintains conducting; metal-oxide-semiconductor would not be pulled low because of output voltage to be caused the driving voltage of metal-oxide-semiconductor to decrease and enters linear condition, and then avoids leading to heating burnout because power consumption is too big.
Description
Technical field
The utility model relates to driving circuit technical field more particularly to a kind of driving circuits of field effect transistor.
Background technique
Field effect transistor M OS pipe is in circuit a kind of very universal usage as electronic switch.But work as metal-oxide-semiconductor
When short trouble occurs for the output of control, output voltage drops into zero, and the driving voltage of corresponding metal-oxide-semiconductor also levels off to zero, at this moment
Metal-oxide-semiconductor exits on state, and into linear condition, all energy of circuit are applied on metal-oxide-semiconductor, be easy to cause metal-oxide-semiconductor moment mistake
Heat is burnt.
Utility model content
The purpose of this utility model is to provide a kind of driving circuits of field effect transistor, are asked with solving the above technology
Topic.
For this purpose, the utility model uses following technical scheme：
A kind of driving circuit of field effect transistor, including power supply, switching circuit, first capacitor C1 and metal-oxide-semiconductor；
The switching circuit includes control terminal, the first output end and second output terminal；
First output end and second output terminal are connected to the both ends of the first capacitor C1, the first capacitor
One end of C1 is also in series with first resistor R1 and the first protection diode D1；
The both ends of the first capacitor C1 are connected to the metal-oxide-semiconductor, for controlling the on-off of the metal-oxide-semiconductor；
The control terminal can control the impedance between first output end and second output terminal to tend to infinity or zero；
When impedance between first output end and second output terminal tends to infinity, the power supply is through first electricity
Resistance R1 and the first protection diode D1 charges to the first capacitor C1, so that the metal-oxide-semiconductor is connected；
When impedance between first output end and second output terminal goes to zero, the first capacitor C1 is through the switch
Circuit discharging, so that the metal-oxide-semiconductor turns off.
Optionally, the metal-oxide-semiconductor is PMOS tube, and one end of the first capacitor C1 is connected to anode and the institute of the power supply
State the source electrode of PMOS tube；
The other end of the first capacitor C1 is connected to the grid of the PMOS tube, and the other end of the first capacitor C1 is also
It is connected to concatenated first resistor R1 and the first protection diode D1, the cathode of first protection diode is connected to the electricity
The cathode in source.
Optionally, the switching circuit includes the first triode Q1, the second protection diode D2, the second triode Q2, the
Two resistance R2,3rd resistor R3 and the 4th resistance R4；
The emitter of the first triode Q1 is connected to the cathode of the power supply, the collector of the first triode Q1
It is connected to the cathode of the second protection diode D2, the base stage of the first triode Q1 controls institute for receiving control signal
State the on-off of the first triode Q1；
The anode of the first protection diode D2 is connected to one end of the 4th resistance R4, the 4th resistance R4's
The other end is connected to one end of the 3rd resistor R3 and the base stage of the second triode Q2, and the 3rd resistor R3's is another
The emitter of end and the second triode Q2 are all connected to the anode of the power supply；
The collector of the second triode Q2 is connected to one end of the second resistance R2, and the second resistance R2's is another
One end is connected to the grid of the PMOS tube；
The first triode Q1 is NPN type triode, and the second triode Q2 is PNP type triode.
Optionally, the metal-oxide-semiconductor is NMOS tube, and one end of the first capacitor C1 is connected to cathode and the institute of the power supply
State the source electrode of PMOS tube；
The other end of the first capacitor C1 is connected to the grid of the PMOS tube, and the other end of the first capacitor C1 is also
It is connected to concatenated first resistor R1 and the first protection diode D1, the anode of first protection diode is connected to the electricity
The anode in source.
Optionally, the switching circuit includes the first triode Q1, the second triode Q2, second resistance R2 and 3rd resistor
R3；
The emitter of the first triode Q1 and the emitter of the second triode Q2 are all connected to the cathode of the power supply,
The collector of the first triode Q1 is connected to the base stage of the second triode Q2, the collector of the first triode Q1
It is also attached to one end of the 3rd resistor R3, the other end of the 3rd resistor R3 is connected to the anode of the power supply；
The collector of the second triode Q2 is connected to one end of the second resistance R2, and institute second resistance R2's is another
End is connected to the grid of the NMOS tube；
The base stage of the first triode Q1 is used to receive the on-off that control signal controls the first triode Q1；
The first triode Q1 and the second triode Q2 is NPN type triode.
Compared with prior art, the utility model embodiment has the advantages that：
In the utility model embodiment, the on-off of metal-oxide-semiconductor is controlled by switching circuit, when the first output end and second export
When impedance between end tends to infinity, power supply charges through first resistor R1 and the first protection diode D1 to first capacitor C1,
So that the metal-oxide-semiconductor conducting；When short trouble occurs for the output of metal-oxide-semiconductor control, although output voltage is pulled low, first is defeated
Impedance between outlet and second output terminal remains unchanged, and since the one-way conduction of the first protection diode D1 limits, and first
Capacitor C1 does not have discharge loop for discharging, and the charge release stored on first capacitor C1 is very slow, the both ends electricity of first capacitor C1
Drops are very slow, and the driving voltage of metal-oxide-semiconductor remains unchanged, and metal-oxide-semiconductor maintains conducting；Therefore, if the two of first capacitor C1
Hold voltage falling time considerably beyond the short-circuit protection time of power supply, metal-oxide-semiconductor would not be pulled low because of output voltage and cause MOS
The driving voltage of pipe decreases and enters linear condition, and then avoids leading to heating burnout because power consumption is too big.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, before not making the creative labor property
It puts, can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the circuit theory schematic diagram of the prior art.
Fig. 2 is a kind of circuit theory signal of the driving circuit for field effect transistor that the utility model embodiment one provides
Figure.
Fig. 3 is a kind of circuit theory signal of the driving circuit for field effect transistor that the utility model embodiment two provides
Figure.
Fig. 4 is a kind of physical circuit figure of the driving circuit for field effect transistor that the utility model embodiment two provides.
Fig. 5 is a kind of circuit theory signal of the driving circuit for field effect transistor that the utility model embodiment three provides
Figure.
Fig. 6 is a kind of physical circuit figure of the driving circuit for field effect transistor that the utility model embodiment three provides.
Specific embodiment
It, below will knot to enable the purpose of utility model, feature, advantage of the utility model more obvious and understandable
The attached drawing in the utility model embodiment is closed, the technical scheme in the utility model embodiment is clearly and completely described,
Obviously, the embodiments described below are only the utility model a part of the embodiment, and not all embodiment.Based on this reality
It is obtained by those of ordinary skill in the art without making creative efforts all other with the embodiment in novel
Embodiment is fallen within the protection scope of the utility model.
Refering to Figure 1, Fig. 1 is the circuit theory schematic diagram of the prior art.
Metal-oxide-semiconductor is as electronic switch in use, to avoid opening moment generation surge current, it is desirable that opens speed and wants
It slowly, but is when off to avoid generating big power consumption, it is desirable that shutdown is fast.Fig. 1 is a typical application, and PMOS is as electronics
Switch uses, and the base stage of the first triode Q1 receives the open signal of high level, the first triode Q1 conducting, power supply when opening
V1N, first capacitor C1, first resistor R1 and the first triode Q1 constitute a charge circuit, and first resistor R1 is a big resistance value
Resistance rises the both end voltage Vc1 of first capacitor C1 slowly, and correspondingly the Vgs voltage of PMOS tube also slowly rises, PMOS tube
It slowly opens until Vc1 is increased beyond the saturation conduction voltage of PMOS tube, PMOS tube enters fully on state.
When the base stage of the first triode Q1 receives the cut-off signals of low-voltage, the first triode Q1 shutdown, the first electricity
Hold C1, second resistance R2 and the first protection diode D1 and constitutes a discharge loop.Wherein, the resistance value of second resistance R2 is smaller,
So that first capacitor C1 electric discharge is quickly, the both end voltage Vc1 of first capacitor C1 declines rapidly, and the Vgs voltage of PMOS tube is also rapid
Decline, PMOS tube rapidly switch off.
But when the output short-circuit of metal-oxide-semiconductor control, power supply V1N voltage is pulled low close to zero, at this moment first capacitor
C1 follows power supply V1N tension discharge, and the both end voltage Vc1 of first capacitor C1 is reduced rapidly, and PMOS tube enters linear condition, power supply
The energy of V1N is all added in PMOS tube, since the time of power supply V1N starting short-circuit protection generally arrives several hundred milliseconds of ability tens
Can movement, and when power supply V1N energy is larger several milliseconds can burn PMOS tube, therefore, PMOS tube be easy to export it is short
It is burnt when road.
Embodiment one
It please refers to shown in Fig. 2, in order to solve the above-mentioned technical problem, it is brilliant that the utility model embodiment provides a kind of field-effect
The driving circuit of body pipe.
Specifically, the driving circuit of the field effect transistor includes power supply, switching circuit 10, first capacitor C1 and metal-oxide-semiconductor；
Switching circuit 10 includes control terminal, the first output end and second output terminal；First output end and second output terminal are connected to
The both ends of first capacitor C1, one end of first capacitor C1 are also in series with first resistor R1 and the first protection diode D1；First electricity
The both ends for holding C1 are connected to metal-oxide-semiconductor, for controlling the on-off of metal-oxide-semiconductor；Control terminal can control the first output end and second output terminal
Between impedance tend to be infinitely great or zero；When impedance between first output end and second output terminal tends to infinity, power supply warp
First resistor R1 and the first protection diode D1 charges to first capacitor C1, so that metal-oxide-semiconductor is connected；First output end and second defeated
When impedance between outlet goes to zero, first capacitor C1 discharges through the switching circuit 10, so that metal-oxide-semiconductor turns off.
When the output short-circuit of metal-oxide-semiconductor control, although output voltage is pulled low, the first output end and second output terminal
Between impedance remain unchanged, and since the one-way conduction of the first protection diode D1 limits, first capacitor C1 do not discharge back
For discharging, the charge release stored on first capacitor C1 is very slow on road, and the both end voltage decline of first capacitor C1 is very slow,
The driving voltage of metal-oxide-semiconductor remains unchanged, and metal-oxide-semiconductor maintains conducting；Therefore, as long as the both end voltage fall time of first capacitor C1 is remote
Far more than the short-circuit protection time of power supply, metal-oxide-semiconductor would not be pulled low because of output voltage causes the driving voltage of metal-oxide-semiconductor therewith
It is lowered into linear condition, and then avoids leading to heating burnout because power consumption is too big.
Embodiment two
In order to further illustrate the content of the present invention, please refer to shown in Fig. 3.
A kind of driving circuit of field effect transistor provided in this embodiment, metal-oxide-semiconductor are PMOS tube.
One end of first capacitor C1 is connected to the anode of power supply and the source electrode of PMOS tube, the other end connection of first capacitor C1
In the grid of PMOS tube, the other end of first capacitor C1 is also attached to concatenated first resistor R1 and the first protection diode D1,
The cathode of first protection diode is connected to the cathode of power supply.
Specifically, the physical circuit figure of the embodiment is as shown in Figure 4.It discloses a kind of specific implementations of switching circuit 10
Mode, it is to be understood that the specific embodiment is a concrete application example of switching circuit 10, rather than its whole.
Specifically, switching circuit 10 includes the first triode Q1, the second protection diode D2, the second triode Q2, second
Resistance R2,3rd resistor R3 and the 4th resistance R4；The emitter of first triode Q1 is connected to the cathode of power supply, the first triode
The collector of Q1 is connected to the cathode of the second protection diode D2, and the base stage of the first triode Q1 is for receiving control signal control
The on-off of first triode Q1；The anode of first protection diode D2 is connected to one end of the 4th resistance R4, the 4th resistance R4's
The other end is connected to one end of 3rd resistor R3 and the base stage of the second triode Q2, the other end of 3rd resistor R3 and the two or three pole
The emitter of pipe Q2 is all connected to the anode of power supply；The collector of second triode Q2 is connected to one end of second resistance R2, the
The other end of two resistance R2 is connected to the grid of PMOS tube；First triode Q1 is NPN type triode, and the second triode Q2 is
PNP type triode.
When the base stage opened " low level " and be added to the first triode Q1, the first triode Q1 cut-off, the second triode Q2's
Base stage becomes high level, the second triode Q2 cut-off, power supply V1N, first capacitor C1, first resistor R1 and the first protection diode
D1 is constituted to the charge circuit of first capacitor C1, as the both end voltage Vc1 of first capacitor C1 gradually rises, PMOS tube slowly into
Enter fully on state, completes opening process.
When shutdown " high level " is added to the base stage of the first triode Q1, the first triode Q1 is open-minded, the second triode Q2's
Base stage is low level, and the second triode Q2 conducting, first capacitor C1, the second triode Q2 and second resistance R2 composition are discharged back
Road, since second resistance R2 resistance value is smaller, first capacitor C1 discharges rapidly, and Vc1 is reduced rapidly, and PMOS tube is rapidly turned off.
It is open-minded in PMOS tube, but when the output generation short trouble of PMOS tube control, it opens " low level " signal and maintains not
Becoming, the first triode Q1 maintains cut-off, and the second triode Q2 accordingly maintains to end, and first capacitor C1 does not have a discharge loop, and first
The charge release stored on capacitor C1 is very slow, and the decline of Vc1 voltage is very slow, and PMOS tube maintains conducting, as long as Vc1 fall time
Considerably beyond the short-circuit protection time of power supply V1N, PMOS tube would not enter linear condition and generate power consumption and damage of generating heat.
Wherein, the first protection diode D1 is to prevent first capacitor C1 from protecting by the abnormal electric discharge of first resistor R1, second
Shield diode D2 is the damage for preventing the negative pressure of short circuit generation to the second triode Q2.3rd resistor R3 is biasing resistor, is risen anti-
Interference effect, the 4th resistance R4 is metering function, is all needed for reliability design.
Embodiment three
In order to further explain the content of the present invention, please refer to shown in Fig. 5.
A kind of driving circuit of field effect transistor provided in this embodiment, metal-oxide-semiconductor are NMOS tube, the one of first capacitor C1
End is connected to the cathode of the power supply and the source electrode of the PMOS tube.
The other end of first capacitor C1 is connected to the grid of PMOS tube, and the other end of first capacitor C1 is also attached to concatenated
First resistor R1 and the first protection diode D1, the anode of the first protection diode are connected to the anode of power supply.
Specifically, the physical circuit figure of the embodiment is as shown in Figure 6.It discloses a kind of specific implementations of switching circuit 10
Mode, it is to be understood that the specific embodiment is a concrete application example of switching circuit 10, rather than its whole.
Specifically, switching circuit 10 includes the first triode Q1, the second triode Q2, second resistance R2 and 3rd resistor
R3。
The emitter of the emitter of first triode Q1 and the second triode Q2 are all connected to the cathode of power supply, the one or three pole
The collector of pipe Q1 is connected to the base stage of the second triode Q2, and the collector of the first triode Q1 is also attached to 3rd resistor R3's
The other end of one end, 3rd resistor R3 is connected to the anode of power supply.
The collector of second triode Q2 is connected to one end of second resistance R2, and the other end of second resistance R2 is connected to
The grid of NMOS tube.
The base stage of first triode Q1 is used to receive the on-off that control signal controls the first triode Q1.
First triode Q1 and the second triode Q2 is NPN type triode.
When the base stage of first triode Q1 is high level, the first triode Q1 conducting, the second triode Q2 cut-off, power supply
V1N, the first protection diode D1, first resistor R1 and first capacitor C1 constitute a charge circuit, because first resistor R1 hinders
It is worth larger, so the both end voltage Vc1 of first capacitor C1 slowly rises, NMOS tube is slowly open-minded.
When the base stage of first triode Q1 is low level, the first triode Q1 cut-off, the second triode Q2 is open-minded, the first electricity
Hold C1, second resistance R2 and the second triode Q2 and constitute discharge loop, because second resistance R2 resistance value is smaller, so first capacitor C1
Electric discharge, NMOS tube are rapidly turned off rapidly.
When the output short-circuit of NMOS tube control, because the base stage of the first triode Q1 maintains high level, the first triode
Q1 remains open-minded, and the second triode Q2 maintains cut-off, and first capacitor C1 does not have discharge loop, only self discharge, first capacitor C1
Both end voltage Vc1 decline it is very slow, NMOS tube can remain completely open-minded, until power supply V1N starting short-circuit protection movement
It stops working, whole process NMOS tube is in fully on state, and oneself power consumption is very low, will not cause to overheat because power consumption is too big
It burns.
The above, above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations；Although ginseng
The utility model is described in detail according to previous embodiment, those skilled in the art should understand that：It is still
It is possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is equally replaced
It changes；And these are modified or replaceed, various embodiments of the utility model technical solution that it does not separate the essence of the corresponding technical solution
Spirit and scope.
Claims (5)
1. a kind of driving circuit of field effect transistor, it is characterised in that：
The driving circuit includes power supply, switching circuit, first capacitor C1 and metal-oxide-semiconductor；
The switching circuit includes control terminal, the first output end and second output terminal；
First output end and second output terminal are connected to the both ends of the first capacitor C1, the first capacitor C1's
One end is also in series with first resistor R1 and the first protection diode D1；
The both ends of the first capacitor C1 are connected to the metal-oxide-semiconductor, for controlling the on-off of the metal-oxide-semiconductor；
The control terminal can control the impedance between first output end and second output terminal to tend to infinity or zero；
When impedance between first output end and second output terminal tends to infinity, the power supply is through the first resistor R1
It charges with the first protection diode D1 to the first capacitor C1, so that the metal-oxide-semiconductor is connected；
When impedance between first output end and second output terminal goes to zero, the first capacitor C1 is through the switching circuit
Electric discharge, so that the metal-oxide-semiconductor turns off.
2. driving circuit according to claim 1, which is characterized in that the metal-oxide-semiconductor is PMOS tube, the first capacitor C1
One end be connected to the power supply anode and the PMOS tube source electrode；
The other end of the first capacitor C1 is connected to the grid of the PMOS tube, and the other end of the first capacitor C1 is also connected with
In concatenated first resistor R1 and the first protection diode D1, the cathode of first protection diode is connected to the power supply
Cathode.
3. driving circuit according to claim 2, which is characterized in that the switching circuit includes the first triode Q1, the
Two protection diode D2, the second triode Q2, second resistance R2,3rd resistor R3 and the 4th resistance R4；
The emitter of the first triode Q1 is connected to the cathode of the power supply, the collector connection of the first triode Q1
In the cathode of the second protection diode D2, the base stage of the first triode Q1 is for receiving control signal control described the
The on-off of one triode Q1；
The anode of the first protection diode D2 is connected to one end of the 4th resistance R4, and the 4th resistance R4's is another
End be connected to the 3rd resistor R3 one end and the second triode Q2 base stage, the other end of the 3rd resistor R3 and
The emitter of the second triode Q2 is all connected to the anode of the power supply；
The collector of the second triode Q2 is connected to one end of the second resistance R2, the other end of the second resistance R2
It is connected to the grid of the PMOS tube；
The first triode Q1 is NPN type triode, and the second triode Q2 is PNP type triode.
4. driving circuit according to claim 1, which is characterized in that the metal-oxide-semiconductor is NMOS tube, the first capacitor C1
One end be connected to the cathode of the power supply and the source electrode of the PMOS tube；
The other end of the first capacitor C1 is connected to the grid of the PMOS tube, and the other end of the first capacitor C1 is also connected with
In concatenated first resistor R1 and the first protection diode D1, the anode of first protection diode is connected to the power supply
Anode.
5. driving circuit according to claim 4, which is characterized in that the switching circuit includes the first triode Q1, the
Two triode Q2, second resistance R2 and 3rd resistor R3；
The emitter of the first triode Q1 and the emitter of the second triode Q2 are all connected to the cathode of the power supply, described
The collector of first triode Q1 is connected to the base stage of the second triode Q2, and the collector of the first triode Q1 also connects
It is connected to one end of the 3rd resistor R3, the other end of the 3rd resistor R3 is connected to the anode of the power supply；
The collector of the second triode Q2 is connected to one end of the second resistance R2, and the other end of institute second resistance R2 connects
It is connected to the grid of the NMOS tube；
The base stage of the first triode Q1 is used to receive the on-off that control signal controls the first triode Q1；
The first triode Q1 and the second triode Q2 is NPN type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820729023.XU CN208174653U (en) | 2018-05-16 | 2018-05-16 | A kind of driving circuit of field effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820729023.XU CN208174653U (en) | 2018-05-16 | 2018-05-16 | A kind of driving circuit of field effect transistor |
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| CN208174653U true CN208174653U (en) | 2018-11-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110417260A (en) * | 2019-07-23 | 2019-11-05 | 武汉洲际电讯科技股份有限公司 | A kind of switching power circuit of detectable electric current |
| WO2022000596A1 (en) * | 2020-06-29 | 2022-01-06 | 深圳市华思旭科技有限公司 | Switch circuit and electric apparatus |
-
2018
- 2018-05-16 CN CN201820729023.XU patent/CN208174653U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110417260A (en) * | 2019-07-23 | 2019-11-05 | 武汉洲际电讯科技股份有限公司 | A kind of switching power circuit of detectable electric current |
| WO2022000596A1 (en) * | 2020-06-29 | 2022-01-06 | 深圳市华思旭科技有限公司 | Switch circuit and electric apparatus |
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Address after: 523430 Fushan shajingkeng Industrial Zone, Liaobu Town, Dongguan City, Guangdong Province Patentee after: DONGGUAN DONGZHUN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 523430 Fushan shajingkeng Industrial Zone, Liaobu Town, Dongguan City, Guangdong Province Patentee before: DONGGUAN ZINENG ELECTRONIC TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20231208 Address after: 518000 406, building 1, COFCO Yunjing Plaza, heshuikou community, Matian street, Guangming District, Shenzhen, Guangdong Patentee after: Shenzhen dongzhun Electronic Technology Co.,Ltd. Address before: 523430 Fushan shajingkeng Industrial Zone, Liaobu Town, Dongguan City, Guangdong Province Patentee before: DONGGUAN DONGZHUN ELECTRONIC TECHNOLOGY Co.,Ltd. |