CN208087501U - A kind of AlN ceramic metallization bonded copper base - Google Patents
A kind of AlN ceramic metallization bonded copper base Download PDFInfo
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- CN208087501U CN208087501U CN201820543071.XU CN201820543071U CN208087501U CN 208087501 U CN208087501 U CN 208087501U CN 201820543071 U CN201820543071 U CN 201820543071U CN 208087501 U CN208087501 U CN 208087501U
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- aln
- film
- bonded copper
- copper base
- aln ceramic
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Abstract
The utility model discloses a kind of AlN ceramic metallization bonded copper bases, it is characterized in that, it including AlN substrates, Cu, Ti, Ni, W film and applies and connects copper sheet layer, Cu, Ti, Ni, W film is coated in the surfaces AlN, and the Cu lamellas are applied and are connected on Cu, Ti, Ni, W film.The preparation process of the utility model key completes in tube furnace and is not necessarily to reducibility gas, and the AlN ceramic at low cost and being prepared that carbon dust used can recycle metallizes, and bonded copper base adhesive force is good, and conductive radiator is had excellent performance, and is suitble to large-scale production.
Description
Technical field
The utility model is related to the metallization of ceramic substrate more particularly to a kind of AlN ceramic metallization bonded copper bases.
Background technology
Aluminium nitride (A1N) ceramics are a kind of very popular materials in electronics industry in recent years.Because it is with high thermal conductivity
Rate (being 5 ~ 10 times of aluminium oxide close to silicon carbide and beryllium oxide), low dielectric constant and dielectric loss, good electrical isolation are special
Property and the coefficient of thermal expansion to match with silicon, GaAs.Compared with beryllium oxide ceramics, aluminium nitride ceramics does not have toxicity, and
Production cost is relatively low, and therefore, aluminium nitride ceramics is presently the most ideal high-performance ceramic substrate and encapsulating material, and has gradually
The strong trend of substitution hypertoxic beryllium oxide ceramics and low performance aluminium oxide ceramics.
For the sealing of encapsulating structure, the purpose of component carries and input, the connection of leading-out terminal, AIN ceramic substrates
Surface and inside are both needed to metallize, and the metallization of AIN ceramics is an important topic of A1N ceramic applications researchs.AlN is strong total
Valence link compound, it is more difficult at high temperature to moisten with metal compared with the metal oxide that ionic bond combines, metallization difficulty compared with
Greatly.Therefore, seeking suitable method makes AIN substrate metals and realizes graphically, becomes A1N ceramics introducing microelectronics envelope
Dress field, and obtain widely applied key.The A1N ceramic metallization methods developed at present mainly have：Film metal
Change (such as Ti/Pt/Au), thick-film metalliz (low temperature metalization, high temperature metallization), electroless metallization plating (such as Ni), Direct Bonding
Copper metallization (DBC) etc..
Invention content
For overcome the deficiencies in the prior art, the purpose of this utility model is to provide a kind of metallization of AlN ceramic to apply copper
Substrate obtains AlN ceramic metallization bonded copper base by screen printed thick film and DBC techniques.
To solve the above-mentioned problems, technical solution used by the utility model is as follows：
AlN ceramic metallizes bonded copper base, including AlN substrates, Cu, Ti, Ni, W film and applies and connect layers of copper, the Cu, Ti,
Ni, W film are then to be formed its slurry coating through atmosphere sintering carbon reducing agent on the surfaces AlN by screen printing mode, described
It is in Cu, Ti, Ni, W film layer to apply and connect layers of copper, and vacuum-sintering temperature is carried out applying near the fusing point of copper and be connect.
The technological process of production of the utility model is summarized as follows：
AlN ceramic piece-cleaning-screen printed thick film slurry-drying-atmosphere sintering-carbon reducing agent --- vacuum is burnt
Knot applies copper
Preferably, Cu, Ti, Ni, W film thickness is 30 ~ 90 μm, and it is 200 ~ 300 μm to apply and connect Cu layer thickness.
Compared with prior art, the effect of the utility model is：It is easy to implement that the utility model simplifies process conditions, closes
The preparation process of key completes in tube furnace and without logical reducibility gas, and carbon dust used can be recycled at low cost and be made
Standby obtained AlN ceramic metallization bonded copper base adhesive force is good, and conductive radiator is had excellent performance, and is suitble to large-scale production.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model AlN ceramic metallization bonded copper base.
1 is AlN ceramic piece in figure
2 be Cu, Ti, Ni, W metal layer
3 connect copper sheet layer to apply.
Specific implementation mode
The utility model is described further with reference to the accompanying drawings and detailed description：
As shown in Figure 1, for the utility model AlN ceramic metallize bonded copper base structure, including AlN substrates, Cu, Ti, Ni,
W films connect layers of copper with deposited, and Cu, Ti, Ni, W film is by its slurry coating by screen printing mode on the surfaces AlN and then through gas
Atmosphere sintering carbon reducing agent forms, it is described apply to connect layers of copper and apply be connected on Cu, Ti, Ni, W film layer, vacuum-sintering temperature is in the molten of copper
Point is nearby carried out applying and be connect.
Embodiment 1
The preparation method of AlN ceramic metallization bonded copper base, includes the following steps：
1, organic carrier technical process is synthesized：Using ethyl cellulose, terpinol is mixed in beaker according to a certain percentage
In, obtain organic carrier after dissolving is stirred continuously under 95 DEG C of water bath conditions.
2, Cu, Ti, Ni, W slurry preparation process：Function phase Cu, Ti, Ni, W powder is weighed and corresponding proportion in proportion
Organic carrier is mixed in hermetically sealed can, the 150r/min ground and mixeds 8h in three-roll mill, and metal organic ink is made.
3, AlN substrate bases are carried out successively being cleaned by ultrasonic each 10min with acetone, alcohol, deionized water, drying is for use.
4, by step 2 gained metal organic ink as screen process press even application in step 3 obtained by the surfaces AlN, so
Dry 30min is placed in 120 DEG C of air dry ovens, and same method brushes AlN substrate another sides.
5, step 4 gained sample is placed in weak oxide atmosphere tube type stove, 1070 is warming up to 5 DEG C/min heating rates
DEG C, keep the temperature 30min, Temperature fall.
6, step 5 gained sample is placed on carbon dust to be put into vacuum tube furnace and is warming up to 5 DEG C/min heating rates
1075 DEG C, 10min is kept the temperature, Temperature fall after being cooled to 500 DEG C with 3 DEG C/min rate of temperature fall obtains Cu, Ti, Ni, W film thickness
It is 50 μm.
7, the Cu pieces that thickness is 200 μm are cleaned by ultrasonic to apply after drying and are connected on step 6 gained sample two sides, put on copper sheet
The counterweight for setting 1Kg is then placed in vacuum tube furnace and is warming up to 1080 DEG C with 5 DEG C/min, keeps the temperature 30min, is cooled down with 3 DEG C/min
AlN ceramic metallization bonded copper base is made in Temperature fall after rate is cooled to 500 DEG C.
The above is only a kind of preferred embodiment of AlN ceramic metallization bonded copper base of the utility model, and
The non-technical scope to the utility model makes any restrictions, and every foundation the technical essence of the utility model is to above-described embodiment
Any trickle amendment equivalent variations are done, modifies, still belongs to the range of the utility model technology contents.
Claims (2)
- The bonded copper base 1. a kind of AlN ceramic metallizes, which is characterized in that including AlN substrates, Cu, Ti, Ni, W film and apply and connect copper sheet Layer, Cu, Ti, Ni, W film are coated in the surfaces AlN, and the Cu lamellas are applied and are connected on Cu, Ti, Ni, W film.
- 2. a kind of AlN ceramic metallizes bonded copper base as described in claim 1, which is characterized in that Cu, Ti, Ni, W film is Its slurry coating is formed on the surfaces AlN through atmosphere sintering carbon reducing agent by silk-screen printing, sintering and reducing temperature 1060 ~ Near 1080 DEG C, thickness is 30 ~ 90 μm, and the Cu pieces are near the fusing point that vacuum-sintering temperature is copper apply connecing, thickness It is 200 ~ 300 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820543071.XU CN208087501U (en) | 2018-04-17 | 2018-04-17 | A kind of AlN ceramic metallization bonded copper base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820543071.XU CN208087501U (en) | 2018-04-17 | 2018-04-17 | A kind of AlN ceramic metallization bonded copper base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208087501U true CN208087501U (en) | 2018-11-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820543071.XU Expired - Fee Related CN208087501U (en) | 2018-04-17 | 2018-04-17 | A kind of AlN ceramic metallization bonded copper base |
Country Status (1)
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| CN (1) | CN208087501U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111745245A (en) * | 2020-05-14 | 2020-10-09 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for upper box dam of silicon nitride ceramic substrate |
| CN112979351A (en) * | 2021-04-19 | 2021-06-18 | 清华大学 | Multilayer metal film-coated silicon nitride ceramic substrate and preparation method thereof |
| CN113956062A (en) * | 2021-10-25 | 2022-01-21 | 燕山大学 | Ceramic substrate AlN/Ti layered composite material and preparation method and application thereof |
-
2018
- 2018-04-17 CN CN201820543071.XU patent/CN208087501U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111745245A (en) * | 2020-05-14 | 2020-10-09 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for upper box dam of silicon nitride ceramic substrate |
| CN112979351A (en) * | 2021-04-19 | 2021-06-18 | 清华大学 | Multilayer metal film-coated silicon nitride ceramic substrate and preparation method thereof |
| CN113956062A (en) * | 2021-10-25 | 2022-01-21 | 燕山大学 | Ceramic substrate AlN/Ti layered composite material and preparation method and application thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181113 |
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| CF01 | Termination of patent right due to non-payment of annual fee |