CN111745245A - Eutectic welding method for upper box dam of silicon nitride ceramic substrate - Google Patents
Eutectic welding method for upper box dam of silicon nitride ceramic substrate Download PDFInfo
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- CN111745245A CN111745245A CN202010531847.8A CN202010531847A CN111745245A CN 111745245 A CN111745245 A CN 111745245A CN 202010531847 A CN202010531847 A CN 202010531847A CN 111745245 A CN111745245 A CN 111745245A
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- Prior art keywords
- silicon nitride
- ceramic substrate
- nitride ceramic
- dam
- welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention discloses an eutectic welding method of a box dam on a silicon nitride ceramic substrate, which comprises the following steps: firstly, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with that of a box dam needing to be welded on the silicon nitride ceramic; secondly, putting the silicon nitride ceramic substrate and the box dam into a eutectic welding device; thirdly, alloy solder is placed on the metal circuit coating of the silicon nitride ceramic substrate, and then the dam is printed or placed on the silicon nitride ceramic substrate through the alloy solder, wherein the shape of the dam corresponds to that of the metal circuit coating; fourthly, starting the eutectic welding device for welding, wherein the welding temperature is 150-1500 ℃; and fifthly, completing welding. The method adopts an eutectic welding mode for welding the enclosure dam of the silicon nitride ceramics, and is more convenient to operate and lower in cost compared with the magnetron sputtering adopted in the prior art.
Description
Technical Field
The invention relates to the technical field of glass packaging, in particular to a co-crystal welding method for a box dam on a silicon nitride ceramic substrate.
Background
Si3N4Has three crystal structures, namely α phase, β phase and gamma phase (wherein α and β phases are the most common forms), which are all hexagonal structures, and the powder and the substrate are grey white3N4The ceramic substrate has the elastic modulus of 320GPa, the bending strength of 920MPa, the thermal expansion coefficient of only 3.2 × 106/DEG C, the dielectric constant of 9.4, and the advantages of high hardness, high strength, small thermal expansion coefficient, high corrosion resistance and the like3N4The ceramic crystal structure is complex and has large phonon scattering, so that the early research believes that the thermal conductivity is low, such as Si3N4The heat conductivity of products such as bearing balls, structural parts and the like is only 15W/(m.K) -30W/(m.K). In 1995, Haggerty et al showed by classical solid transmission theoretical calculation that Si3N4The main reasons for the low thermal conductivity of the material are related to defects, impurities and the like in crystal lattices, and the theoretical value of the material is predicted to be up to 320W/(m.K). Then, increasing Si3N4A great deal of research is carried out on the thermal conductivity of materials, the thermal conductivity of silicon nitride ceramics is continuously improved through process optimization, and 177W/(m.K) is broken through at present.
Si3N4The ceramic heat transfer mechanism is also phonon heat transfer. Impurities in crystal lattices are often accompanied with structural defects such as vacancies, dislocation and the like, so that the phonon mean free path is reduced, the heat conductivity is reduced, and the preparation of high-purity powder is to prepare high-heat-conductivity Si3N4The key of the ceramic. At present, Si is commercially available on the market3N4Powder preparation methodThere are two main methods, namely a direct silicon powder nitriding method and a silicon imine pyrolysis method. The former process is mature and the production cost is low, so most enterprises at home and abroad use the method to produce Si3N4And (3) powder lot. But the method produces Si3N4The powder contains impurities such as Fe, Ca, Al and the like, and can be removed by acid cleaning, but the production cost is greatly increased. The latter can prepare Si with higher sintering activity3N4The powder material contains no metal impurity elements, has particle size distribution of 0.2-1 micron, great output and high technological difficulty.
Si3N4The ceramic sintering aid is typically a metal oxide, a rare earth oxide, or a mixture of the two. Zhou et al use Y2O3The thermal conductivity of the silicon nitride prepared by the MgO sintering aid reaches 177W/(m.K), which is the Si reported so far3N4The highest thermal conductivity of the ceramic. However, the oxide sintering aid may be in Si3N4Oxygen atoms are introduced into the crystal, resulting in a reduction in thermal conductivity. The use of non-oxide sintering aids to reduce oxygen content and to purify Si3N4The crystal lattice, the reduction of crystal boundary glass phase, the improvement of thermal conductivity and high-temperature mechanical property have important significance. MgSiN for Zhuangzhenhua et al2And MgSiN2And Y2O3The mixture is used as a sintering aid to prepare Si under the same conditions3N4The former has a thermal conductivity of 90W/(mK), while the latter is only 70W/(mK). Hayashi et al in Yb2O3-MgSiN2And Yb2O3MgO as a sintering aid, Si3N4 ceramic was prepared under the same conditions, and as a result, the thermal conductivity of the former was found to be higher.
Si3N4The ceramic sintering method mainly comprises reaction sintering, normal pressure sintering, hot pressing sintering, discharge plasma sintering and the like. The reactive sintering has the advantages of low linear shrinkage rate, low cost and the like, but has low density, poor mechanical property and low thermal conductivity. Si prepared by normal pressure sintering and hot pressing sintering3N4The ceramic has better mechanical property, but low thermal conductivity and higher cost. The gas pressure sintering is carried out in the sintering processA gas (usually N) having a pressurizing force of about 1MPa to 10MPa2) To suppress Si3N4Decomposing, promoting the powder densification and obtaining the high-density product. Spark plasma sintering is a new technology for preparing ceramics by sintering under the effects of a pressure field, a temperature field, a current field and the like.
Among the ceramic materials which have been used as substrate materials, Si3N4The ceramic has high bending strength (more than 800MPa) and good wear resistance, is a ceramic material with the best comprehensive mechanical property, and has the smallest thermal expansion coefficient, so the ceramic is considered to be a potential power device packaging substrate material. But the preparation process is complex, the cost is high, the thermal conductivity is low, and the method is mainly suitable for the field with high strength requirement and low heat dissipation requirement.
When the silicon nitride ceramic substrate is used as an LED substrate, a box dam needs to be welded, the existing welding is carried out in a magnetron sputtering mode, the operation is relatively complex, and the cost is higher.
Disclosure of Invention
In view of the above problems in the prior art, the present invention provides a eutectic bonding method for a dam on a silicon nitride ceramic substrate, which comprises the following steps:
an eutectic welding method for a box dam on a silicon nitride ceramic substrate comprises the following steps:
firstly, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with that of a box dam needing to be welded on the silicon nitride ceramic;
secondly, putting the silicon nitride ceramic substrate and the box dam into a eutectic welding device;
thirdly, alloy solder is placed on the metal circuit coating of the silicon nitride ceramic substrate, and then the dam is printed or placed on the silicon nitride ceramic substrate through the alloy solder, wherein the shape of the dam corresponds to that of the metal circuit coating;
fourthly, starting the eutectic welding device for welding, wherein the welding temperature is 150-500 ℃;
and fifthly, completing welding.
Further preferably, the thick film printing technique comprises the steps of:
a first step of preparing a silicon nitride ceramic substrate for printing and a metal paste for printing or placement;
secondly, thick film screen printing is carried out on the silicon nitride ceramic substrate by utilizing the metal paste, and the thickness of a circuit formed by the metal paste is 10-200 mu m;
thirdly, sintering the circuit formed in the last step, and adding mixed gas through a high-temperature tunnel furnace to perform high-temperature sintering at the sintering temperature of 150-1500 ℃;
and fourthly, manufacturing the silicon nitride ceramic substrate with the metal circuit coating.
Further preferably, the dam is made of a ceramic material, and the side of the dam for welding is printed with a metal coating by the thick film printing technology.
Preferably, before welding in the eutectic welding device, a vacuum pumping device is started to perform vacuum treatment on the welding environment.
Has the advantages that: the welding method is novel in concept, reasonable in design and convenient to use, eutectic welding is adopted for welding the silicon nitride ceramic box dam, and compared with the method of adopting magnetron sputtering in the prior art, the welding method is more convenient to operate and lower in cost.
Drawings
Fig. 1 is an exploded view of a specific welding structure according to an embodiment of the present invention.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings:
an eutectic welding method for a box dam on a silicon nitride ceramic substrate comprises the following steps:
firstly, printing a metal circuit coating 2 on a silicon nitride ceramic substrate 1 by a thick film printing technology, wherein the shape of the metal circuit coating 2 is matched with that of a box dam 3 needing to be welded on the silicon nitride ceramic substrate 1;
secondly, putting the silicon nitride ceramic substrate 1 and the box dam 3 into a eutectic welding device;
thirdly, alloy solder is placed on the metal circuit coating 2 of the silicon nitride ceramic substrate 1, then the dam 3 is printed or placed on the silicon nitride ceramic substrate 1 through the alloy solder, and the shape of the dam 3 corresponds to that of the metal circuit coating 2;
fourthly, starting the eutectic welding device for welding, wherein the welding temperature is 150-500 ℃;
and fifthly, completing welding.
In the basic scheme of the invention, because the silicon nitride ceramic substrate 1 is made of inorganic materials, in order to realize welding, a metal coating 2 needs to be formed on the surface, and the coating needs to be carried out according to a certain rule. Accordingly, the dam 3 also needs to be adapted to the pattern formed by the metal coating 2. Because the eutectic welding is adopted, an eutectic welding device is required, and the welding can be directly carried out under the condition that the box dam 3 is made of metal materials. And placing an alloy coating on the metal line coating 2, placing the silicon nitride ceramic substrate 1, the alloy coating and the box dam 3, and then starting equipment for welding, wherein the adopted temperature is 150-500 ℃, and is an appropriate temperature. A eutectic welded metal connecting layer 4 is formed between the silicon nitride ceramic substrate 1 and the box dam 3.
Fig. 1 is an exploded view of a specific soldering structure adopted in the present embodiment, and the method of the present invention is not limited to the structure shown in fig. 1, and even the method of the present invention can be applied to other semiconductor connection soldering situations.
Further, preferably, the thick film printing technique comprises the steps of:
a first step of preparing a silicon nitride ceramic substrate 1 for printing and a metal paste for printing or placement;
secondly, thick film screen printing is carried out on the silicon nitride ceramic substrate by utilizing the metal paste, and the thickness of a circuit formed by the metal paste is 10-200 mu m;
thirdly, sintering the circuit formed in the last step, and adding mixed gas through a high-temperature tunnel furnace to perform high-temperature sintering at the sintering temperature of 150-1500 ℃;
and fourthly, manufacturing the silicon nitride ceramic substrate with the metal circuit coating.
In the preferred embodiment, a specific method step for thick film printing is provided.
Further, preferably, the box dam 3 is made of a ceramic material, and the surface of the box dam 3 for welding is printed with a metal coating by the thick film printing technology.
In the preferred embodiment, the dam 3 made of ceramic material is subjected to eutectic soldering by printing a metal coating.
Preferably, the vacuum extractor is started to perform vacuum treatment on the welding environment before welding in the eutectic welding device.
In the preferred scheme, the vacuum pumping treatment is firstly carried out on the welding environment so as to avoid bubbles.
In addition, the method provided by the invention forms the welding between the ceramic substrate and the dam in a eutectic welding mode, and in practical application, the method is not limited to the LED lamp set, and can also be used for other semiconductor packages, such as lasers and the like.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (4)
1. An eutectic welding method of a box dam on a silicon nitride ceramic substrate is characterized by comprising the following steps:
firstly, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with that of a box dam needing to be welded on the silicon nitride ceramic;
secondly, putting the silicon nitride ceramic substrate and the box dam into a eutectic welding device;
thirdly, alloy solder is placed on the metal circuit coating of the silicon nitride ceramic substrate, and then the dam is printed or placed on the silicon nitride ceramic substrate through the alloy solder, wherein the shape of the dam corresponds to that of the metal circuit coating;
fourthly, starting the eutectic welding device for welding, wherein the welding temperature is 150-500 ℃;
and fifthly, completing welding.
2. The eutectic soldering method of a dam on a silicon nitride ceramic substrate according to claim 1, wherein the thick film printing technique comprises the steps of:
a first step of preparing a silicon nitride ceramic substrate for printing and a metal paste for printing or placement;
secondly, thick film screen printing is carried out on the silicon nitride ceramic substrate by utilizing the metal paste, and the thickness of a circuit formed by the metal paste is 10-200 mu m;
thirdly, sintering the circuit formed in the last step, and adding mixed gas through a high-temperature tunnel furnace to perform high-temperature sintering at the sintering temperature of 150-1500 ℃;
and fourthly, manufacturing the silicon nitride ceramic substrate with the metal circuit coating.
3. The eutectic soldering method of a dam on a silicon nitride ceramic substrate according to claim 2, wherein the dam is made of a ceramic material and the side of the dam for soldering is first printed with a metal coating by the thick film printing technique.
4. The eutectic bonding method of a dam on a silicon nitride ceramic substrate according to claim 2 or 3, wherein a vacuum evacuation device is activated to vacuum the bonding environment before bonding in the eutectic bonding device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2020104046512 | 2020-05-14 | ||
| CN202010404651 | 2020-05-14 |
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| CN111745245A true CN111745245A (en) | 2020-10-09 |
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Citations (7)
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| CN202259298U (en) * | 2011-10-13 | 2012-05-30 | 杭州友旺科技有限公司 | Ceramic area light source packaging structure |
| WO2017041280A1 (en) * | 2015-09-11 | 2017-03-16 | 佛山市国星光电股份有限公司 | Led device having transition substrate and encapsulation method therefor |
| CN107863436A (en) * | 2017-10-13 | 2018-03-30 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate containing metallic cavity and preparation method thereof |
| CN108155283A (en) * | 2018-02-01 | 2018-06-12 | 赛创电气（铜陵）有限公司 | A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam |
| CN208087501U (en) * | 2018-04-17 | 2018-11-13 | 中国计量大学 | A kind of AlN ceramic metallization bonded copper base |
| CN109427596A (en) * | 2017-09-05 | 2019-03-05 | 浙江德汇电子陶瓷有限公司 | Base of ceramic and preparation method thereof |
| CN209896097U (en) * | 2019-04-11 | 2020-01-03 | 武汉高星紫外光电科技有限公司 | Deep ultraviolet LED all-inorganic airtight packaging structure |
-
2020
- 2020-06-11 CN CN202010531847.8A patent/CN111745245A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202259298U (en) * | 2011-10-13 | 2012-05-30 | 杭州友旺科技有限公司 | Ceramic area light source packaging structure |
| WO2017041280A1 (en) * | 2015-09-11 | 2017-03-16 | 佛山市国星光电股份有限公司 | Led device having transition substrate and encapsulation method therefor |
| CN109427596A (en) * | 2017-09-05 | 2019-03-05 | 浙江德汇电子陶瓷有限公司 | Base of ceramic and preparation method thereof |
| CN107863436A (en) * | 2017-10-13 | 2018-03-30 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate containing metallic cavity and preparation method thereof |
| CN108155283A (en) * | 2018-02-01 | 2018-06-12 | 赛创电气（铜陵）有限公司 | A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam |
| CN208087501U (en) * | 2018-04-17 | 2018-11-13 | 中国计量大学 | A kind of AlN ceramic metallization bonded copper base |
| CN209896097U (en) * | 2019-04-11 | 2020-01-03 | 武汉高星紫外光电科技有限公司 | Deep ultraviolet LED all-inorganic airtight packaging structure |
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