CN208014734U - A kind of nonpolarity ultraviolet LED - Google Patents
A kind of nonpolarity ultraviolet LED Download PDFInfo
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- CN208014734U CN208014734U CN201820383010.1U CN201820383010U CN208014734U CN 208014734 U CN208014734 U CN 208014734U CN 201820383010 U CN201820383010 U CN 201820383010U CN 208014734 U CN208014734 U CN 208014734U
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Abstract
The utility model discloses a kind of nonpolar ultraviolet LED, which includes r surface sapphire substrates, the low temperature AI GaN buffer layers being grown in r surface sapphire substrates, high temperature AlGaN buffer layers, undoped AlGaN layer, N-shaped doping AlGaN layer, AlGaN/AlGaN superlattice layers, AlGaN/AlGaN multi-quantum well active regions, undoped AlGaN cap layers, low-temperature p-type doping AlGaN layer, p-type doping AlGaN layer and p-type heavy doping AlGaN layer successively from bottom to top.The nonpolar ultraviolet LED of the utility model uses AlGaN material as device basic material, it can not only Effective Regulation LED emission wavelengths, the light polarization that nonpolar group III-nitride luminescent device has more effectively is utilized, has great application prospect in such as semiconductor laser, ultraviolet detector nitride component between ultraviolet region.
Description
Technical field
The utility model is related to ultraviolet LED, more particularly to a kind of nonpolar ultraviolet LED.
Background technology
By decades constantly research and development, group III-nitride should have extensively in light emitting diode (LED)
It is huge to push the progress and development in epoch to be made that with photoelectricity and microelectronic component field that field-effect transistor is representative
Contribution.However for group III-nitride base LED, it is big difficult that following two are still suffered from present：
1. existing due to spontaneous polarization and piezoelectricity in the III-nitride material grown into using conventional polar aufwuchsplate
Polarize the pressure built in field generated, and electrons and holes wave function is caused to deform, and reduces the Carrier recombination in LED component
Rate, i.e. quantu m_confined Stark effect (QCSE).The predicament limits further increasing for LED component performance；
2. being difficult to realize the extension life of high quality AlN, AlGaN material since the Material growths such as AlN and AlGaN are difficult
It is long, be difficult to realize at present light-emitting zone in-preparation of deep ultraviolet band LED component and the wavelength tuning control of related device.This is tired
Border limits the application range of LED.
In order to solve predicament 1, dual research of the scientists into theory and experiment excessively, it is proposed that growing nonpolar/half-shadow
Property face group III-nitride, make that the built in field of material internal turns to and then elimination/decrease built in field is to device luminescent properties
It influences.In order to solve predicament 2, it is necessary to first realize that high quality AlN, the growth of AlGaN material and quantum well structure design.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of this utility model is to provide one kind being grown in r
The structure of nonpolar ultraviolet LED in surface sapphire substrate.
The purpose of this utility model is achieved through the following technical solutions.
A kind of nonpolarity ultraviolet LED includes r surface sapphire substrates 1, low temperature AI GaN buffer layers 2, height successively from bottom to top
Warm AlGaN buffer layers 3, undoped AlGaN layer 4, N-shaped doping AlGaN layer 5, AlGaN/AlGaN superlattice layers 6, AlGaN/
AlGaN multi-quantum well active regions 7, undoped AlGaN cap layers 8, low-temperature p-type doping AlGaN layer 9, p-type adulterate AlGaN layer 10
With p-type heavy doping AlGaN layer 11；The LED is nonpolarity LED.
Preferably, the thickness of the low temperature AI GaN buffer layers is 40~60nm；The thickness of the high temperature AlGaN buffer layers
For 400~600nm；The thickness of the undoped AlGaN layer is 300~800nm.
Preferably, the N-shaped doping AlGaN layer is the AlGaN films of Si doping, and doping concentration is (1~5) × 1020cm-3；The thickness of the N-shaped doping AlGaN layer is 2~4 μm.
Preferably, the AlGaN/AlGaN superlattice layers are 5~7 periodic structures, are 3nm per layer thickness.
Preferably, the AlGaN/AlGaN multi-quantum well active regions are the AlGaN well layer/AlGaN barrier layer in 7 periods,
Middle AlGaN well layer thickness is 12nm, and AlGaN barrier layer thicknesses are 3nm；The AlGaN barrier layer in preceding 6 periods is mixed for N-shaped from the bottom to top
Diamicton, doped source Si, doping concentration 1017cm-3, the 7th period is without doping.
Preferably, the thickness of the undoped AlGaN cap layers is 10~20nm.
Preferably, the doped source of the low-temperature p-type doping AlGaN layer is Mg, and doping concentration is (1~5) × 1018cm-3；
The thickness of the low-temperature p-type doping AlGaN layer is 80~100nm.
Preferably, the doped source of the p-type doping AlGaN layer is Mg, and doping concentration is (1~5) × 1018cm-3；The p
The thickness that type adulterates AlGaN layer is 180~220nm.
Preferably, the doped source of the p-type heavy doping AlGaN layer is Mg, and doping concentration is (1~3) × 1019cm-3；Institute
The thickness for stating p-type heavy doping AlGaN layer is 15~20nm.
Preferably, the nonpolar ultraviolet LED is given birth to by pulsed laser deposition (PLD) binding molecule beam epitaxy (MBE) method
It is long, it is grown from bottom to top by PLD methods in theca interna including AlGaN buffer layers, remaining film layer is grown by MBE methods, specific to wrap
Include following steps：
(1) r surface sapphire substrates are cleaned；
(2) nitrogen treatment is carried out to the r surface sapphire substrates after cleaning；
(3) the r surface sapphire substrates after nitrogen treatment are made annealing treatment；
(4) growth of low temperature AI GaN buffer layers：R surface sapphire substrates after annealing are warming up to 450 DEG C, anti-
It is 5 × 10 to answer room vacuum degree-7Under the conditions of mbar, in N2With the laser energy ablation AlGaN targets of 250mJ in the faces r indigo plant under atmosphere
Jewel Grown low temperature AI GaN buffer layers；
(5) growth of high temperature AlGaN buffer layers：Step is repeated under 800~900 DEG C of temperature condition (4) 1 times, growth
High temperature AlGaN buffer layers；
(6) growth of undoped AlGaN layer：In MBE, underlayer temperature is 700~900 DEG C, N2Under atmosphere, in step
(5) the high temperature AlGaN buffer-layer surfaces obtained grow undoped AlGaN layer；
(7) growth of N-shaped doping AlGaN layer：Underlayer temperature obtained by step (6) is increased to 800~900 DEG C, N2Atmosphere
Under, growing n-type adulterates AlGaN layer in the undoped AlGaN layer that step (6) obtains；
(8) growth of AlGaN/AlGaN superlattice layers：Underlayer temperature obtained by step (7) is down to 750 DEG C, N2Under atmosphere
AlGaN/AlGaN superlattice layers are grown in the N-shaped doping AlGaN layer that step (7) obtains；
(9) growth of AlGaN/AlGaN multi-quantum well active regions：Underlayer temperature is maintained at 750 DEG C not obtained by step (8)
Become, in N2Under atmosphere, it is active that AlGaN/AlGaN multiple quantum wells is grown on the AlGaN/AlGaN superlattice layers that step (8) obtains
Area；
(10) growth of undoped AlGaN cap layers：Underlayer temperature obtained by step (9) is increased to 800~900 DEG C, N2
Under atmosphere, undoped AlGaN cap layers are grown in the AlGaN/AlGaN multiple quantum wells that step (9) obtains；
(11) growth of low-temperature p-type doping AlGaN layer：Underlayer temperature obtained by step (10) is down to 700~800 DEG C, N2
Under atmosphere, growing low temperature p-type adulterates AlGaN layer in the undoped AlGaN cap layers that step (10) obtains；
(12) growth of p-type doping AlGaN layer：Underlayer temperature obtained by step (11) is increased to 800~900 DEG C, N2Gas
Step (9) growth p-type is repeated under atmosphere adulterates AlGaN layer；
(13) growth of p-type heavy doping AlGaN layer：Underlayer temperature obtained by step (12) is maintained at 800~900 DEG C, N2
Under atmosphere, the epitaxial growth p-type heavy doping AlGaN layer in the p-type doping AlGaN layer that step (12) obtains obtains nonpolar ultraviolet
LED。
Preferably, step (1) the cleaning r surface sapphire substrates, specially：Pass through acetone, deionized water, anhydrous successively
Ethyl alcohol is cleaned by ultrasonic 5min, removal substrate surface organic matter and absorption dust respectively.R surface sapphire substrates after cleaning are with high-purity
Nitrogen dries up.
Preferably, r surface sapphire substrates nitrogenize in step (2), specially：Clean r surface sapphire substrates are put into instead
It answers after being evacuated to high vacuum in room, underlayer temperature is heated to 850 DEG C using heater, and in N2Under environment, 10min is kept the temperature.
Preferably, r surface sapphires are annealed in step (3), specially：Underlayer temperature is increased to 900~950 DEG C, heat preservation
30min。
Compared with prior art, the utility model has the following advantages and beneficial effect：
(1) the nonpolar ultraviolet LED of the utility model uses r surface sapphires as substrate, and large-sized r surface sapphires hold
Easy to obtain, price is suitable for for the substrate that nonpolar ultraviolet LED is grown cheaply, being advantageously implemented the big ruler of industrialization with respect to other
Very little production simultaneously effectively reduces production cost.
(2) the utility model provides a kind of structure of nonpolar ultraviolet LED, is made using AlGaN material in overall structure
For device basic material, can not only Effective Regulation LED emission wavelengths, nonpolar group III-nitride photophore is more effectively utilized
The light polarization that part has has in such as semiconductor laser, ultraviolet detector nitride component between ultraviolet region
Great application prospect.
Description of the drawings
Fig. 1 is the structure chart that the utility model is grown in the nonpolar ultraviolet LED on r surface sapphires.
Fig. 2 is the light microscope surface topography of the nonpolar ultraviolet LED being grown on r surface sapphires of the utility model
Figure.
Fig. 3 is the electroluminescent graph of the nonpolar ultraviolet LED being grown on r surface sapphires of the utility model.
Specific implementation mode
With reference to embodiment and attached drawing, the utility model is described in further detail, but the implementation of the utility model
Mode is without being limited thereto.
The utility model is grown in the structure chart of the nonpolar ultraviolet LED in r surface sapphire substrates as shown in Figure 1, under
Include successively r surface sapphire substrates 1 on and, be grown in low temperature AI GaN buffer layers 2 in r surface sapphire substrates, high temperature AlGaN it is slow
Rush layer 3, undoped AlGaN layer 4, N-shaped doping AlGaN layer 5, AlGaN/AlGaN superlattice layers 6, AlGaN/AlGaN multiple quantum wells
Active area 7, undoped AlGaN cap layers 8, low-temperature p-type doping AlGaN layer 9, p-type doping AlGaN layer 10 and p-type heavy doping
AlGaN layer 11.The utility model prepare LED can not only Effective Regulation emission wavelength, nonpolar III group nitrogen is more effectively utilized
The light polarization that compound luminescent device has.
The thickness of the low temperature AI GaN buffer layers is 40~60nm；The thickness of high temperature AlGaN buffer layers be 400~
600nm；The thickness of undoped AlGaN layer is 300~800nm；The thickness that N-shaped adulterates AlGaN layer is 2~4 μm；AlGaN/
AlGaN superlattice layers are 5~7 periodic structure layers, and every layer of superlattice layer thickness is 3nm.The AlGaN/AlGaN multiple quantum wells has
Source region is 7 periods, and wherein well layer thickness is 12nm, barrier layer thickness 3nm；The thickness of undoped AlGaN cap layers be 10~
20nm；The thickness that low-temperature p-type adulterates AlGaN layer is 80~100nm；The thickness that p-type adulterates AlGaN layer is 180~220nm；P-type
The thickness of heavy doping AlGaN layer is 15~20nm.
Embodiment 1
The preparation method of the nonpolar ultraviolet LED being grown in r surface sapphire substrates of the present embodiment, including following step
Suddenly：
(1) r surface sapphire substrates are cleaned；
(2) r surface sapphire substrates nitrogen treatment；
(3) r surface sapphires make annealing treatment；
The substrate cleaning, specially：R surface sapphire substrates are put into acetone, deionized water, absolute ethyl alcohol and are surpassed successively
Sound cleans 5min, removes surface organic matter and absorption dust, is dried up with high pure nitrogen；
The underlayer nitriding processing, specially：Underlayer temperature is increased to 850 DEG C, in N210min is kept the temperature under atmosphere makes lining
Bottom surface forms coarse seed layer；
The r surface sapphires annealing, specially：R surface sapphire substrate temperature after nitridation is increased to 900 DEG C,
It is 3 × 10 in vacuum degree-730min is kept the temperature under mbar, make underlayer nitriding completely using high annealing and improves r surface sapphires surface
Form the crystalline quality of seed layer；
(4) growth of low temperature AI GaN buffer layers：R surface sapphire substrate temperature be 450 DEG C, reative cell vacuum degree 5 ×
10-7Under the conditions of mbar, in N2The low temperature for being 40nm with the laser energy ablation AlGaN target growth thickness of 250mJ under atmosphere
AlGaN buffer layers；
(5) growth of high temperature AlGaN buffer layers：Step is repeated under 800 DEG C of temperature condition (4) 1 times, growing film thickness
Degree is the high temperature AlGaN buffer layers of 400nm；
(6) growth of undoped AlGaN layer：In MBE, underlayer temperature is 700 DEG C, N2Under atmosphere, obtained in step (5)
High temperature AlGaN buffer-layer surfaces grow undoped GaN layer, thickness 400nm；
(7) growth of N-shaped doping AlGaN layer：Underlayer temperature is increased to 800 DEG C, N2Under atmosphere, obtained in step (6)
Undoped AlGaN layer on growing n-type adulterate AlGaN layer, doping concentration be 1 × 1020cm-3, thickness is 2 μm.
(8) growth of AlGaN/AlGaN superlattice layers：Underlayer temperature is down to 750 DEG C, N2It is obtained in step (7) under atmosphere
To N-shaped doped gan layer on grow AlGaN/AlGaN superlattice layers, AlGaN/AlGaN superlattice layers be 5 periods AlGaN
Layer/AlGaN layer is 3nm per layer thickness.
(9) growth of AlGaN/AlGaN multiple quantum wells：Underlayer temperature be maintained at 750 DEG C it is constant, in N2Under atmosphere, in step
Suddenly AlGaN/AlGaN multiple quantum wells is grown on the AlGaN/AlGaN superlattice layers that (8) obtain, AlGaN/AlGaN multiple quantum wells is
AlGaN well layer/AlGaN the barrier layer in 7 periods, wherein AlGaN well layer thickness are 12nm, and AlGaN barrier layer thicknesses are 3nm.Under
AlGaN barrier layer to 6 periods of going forward is N-shaped doped layer, doped source Si, doping concentration 1017cm-3, the 7th period is not
It is doped, well layer is without doping.
(10) growth of undoped AlGaN cap layers：Underlayer temperature is increased to 800 DEG C, N2Under atmosphere, in step (9)
In obtained AlGaN/AlGaN multiple quantum wells, undoped AlGaN cap layers, thickness 16nm are grown.
(11) growth of low-temperature p-type doping AlGaN layer：Underlayer temperature is down to 700 DEG C, N2Under atmosphere, obtained in step (10)
The p-type doping AlGaN layer arrived, doped source Mg, doping concentration is 3 × 1018cm-3, thickness 80nm.
(12) growth of p-type doping AlGaN layer：Underlayer temperature is increased to 800 DEG C, N2Step (9) is repeated under atmosphere grows p
Type adulterates AlGaN layer, doped source Mg, and doping concentration is 3 × 1018cm-3, thickness 180nm.
(13) growth of p-type heavy doping AlGaN layer：Underlayer temperature is maintained at 800 DEG C, N2Under atmosphere, obtained in step (12)
To p-type doping AlGaN layer on epitaxial growth p-type heavy doping AlGaN layer, doped source Mg, doping concentration be 1 × 1019cm-3,
Thickness is 15nm.
The light microscope surface topography map that embodiment 1 prepares nonpolar ultraviolet LED is as shown in Figure 2；As can be seen from Figure 2, originally
The nonpolar smooth flawless in ultraviolet LED surface being grown in r surface sapphire substrates prepared by embodiment.
The electroluminescent properties figure that embodiment 1 prepares nonpolar ultraviolet LED is as shown in Figure 3；As can be seen from Figure 3, the present embodiment
The nonpolar ultraviolet LED emission wavelength being grown in r surface sapphire substrates prepared reaches peak value, halfwidth at 330nm
Only 23.9nm, this demonstrate it with good luminescent properties.
Embodiment 2
The preparation method of the nonpolar ultraviolet LED being grown in r surface sapphire substrates of the present embodiment, including following step
Suddenly：
(1) r surface sapphire substrates are cleaned；
(2) r surface sapphire substrates nitrogen treatment；
(3) r surface sapphires make annealing treatment；
The substrate cleaning, specially：R surface sapphire substrates are put into acetone, deionized water, absolute ethyl alcohol and are surpassed successively
Sound cleans 5min, removes surface organic matter and absorption dust, is dried up with high pure nitrogen；
The underlayer nitriding processing, specially：Underlayer temperature is increased to 850 DEG C, in N210min is kept the temperature under atmosphere makes lining
Bottom surface forms coarse seed layer；
The r surface sapphires annealing, specially：R surface sapphire substrate temperature after nitridation is increased to 900 DEG C,
Vacuum degree is 3 × 10-7Mbar keeps the temperature 30min, makes underlayer nitriding completely using high annealing and improve r surface sapphires surface to be formed
The crystalline quality of seed layer；
(4) growth of low temperature AI GaN buffer layers：R surface sapphire substrate temperature be 450 DEG C, reative cell vacuum degree 5 ×
10-7Under the conditions of mbar, in N2The low temperature for being 60nm with the laser energy ablation AlGaN target growth thickness of 250mJ under atmosphere
AlGaN buffer layers；
(5) growth of high temperature AlGaN buffer layers：Step is repeated under 850 DEG C of temperature condition (4) 1 times, growing film thickness
Degree is the high temperature AlGaN buffer layers of 600nm；
(6) growth of undoped AlGaN layer：In MBE, underlayer temperature is 900 DEG C, N2Under atmosphere, obtained in step (5)
High temperature AlGaN buffer-layer surfaces grow undoped GaN layer, thickness 800nm；
(7) growth of N-shaped doping AlGaN layer：Underlayer temperature is increased to 900 DEG C, N2Under atmosphere, obtained in step (6)
Undoped AlGaN layer on growing n-type adulterate AlGaN layer, doping concentration be 5 × 1020cm-3, thickness is 4 μm.
(8) growth of AlGaN/AlGaN superlattice layers：Underlayer temperature is down to 750 DEG C, N2It is obtained in step (7) under atmosphere
To N-shaped doping AlGaN layer on grow AlGaN/AlGaN superlattice layers, AlGaN/AlGaN superlattice layers are 5 periods
AlGaN layer/AlGaN layer is 3nm per layer thickness.
(9) growth of AlGaN/AlGaN multiple quantum wells：Underlayer temperature be maintained at 750 DEG C it is constant, in N2Under atmosphere, in step
Suddenly AlGaN/AlGaN multiple quantum wells is grown on the AlGaN/AlGaN superlattice layers that (8) obtain, AlGaN/AlGaN multiple quantum wells is
AlGaN well layer/AlGaN the barrier layer in 7 periods, wherein AlGaN well layer thickness are 12nm, and AlGaN barrier layer thicknesses are 3nm.Under
AlGaN barrier layer to 6 periods of going forward is N-shaped doped layer, doped source Si, doping concentration 1017cm-3, the 7th period is not
It is doped, well layer is without doping.
(10) growth of undoped AlGaN cap layers：Underlayer temperature is increased to 900 DEG C, N2Under atmosphere, in step (9)
In obtained AlGaN/AlGaN multiple quantum wells, undoped AlGaN cap layers, thickness 16nm are grown.
(11) growth of low-temperature p-type doping AlGaN layer：Underlayer temperature is down to 800 DEG C, N2Under atmosphere, obtained in step (10)
The p-type doping AlGaN layer arrived, doped source Mg, doping concentration is 3 × 1018cm-3, thickness 80nm.
(12) growth of p-type doping AlGaN layer：Underlayer temperature is increased to 900 DEG C, N2Step (9) is repeated under atmosphere grows p
Type adulterates AlGaN layer, doped source Mg, and doping concentration is 3 × 1018cm-3, thickness 180nm.
(13) growth of p-type heavy doping AlGaN layer：Underlayer temperature is maintained at 900 DEG C, N2Under atmosphere, obtained in step (12)
To p-type doping AlGaN layer on epitaxial growth p-type heavy doping AlGaN layer, doped source Mg, doping concentration be 1 × 1019cm-3,
Thickness is 15nm.
LED prepared by the utility model can not only Effective Regulation emission wavelength, the nitridation of nonpolar III group is more effectively utilized
The light polarization that object luminescent device has.
The present embodiment prepares the light microscope surface topography map of nonpolar ultraviolet LED with reference to figure 2；From light microscope table
Face shape appearance figure is it is found that the nonpolar smooth nothing in ultraviolet LED surface manufactured in the present embodiment being grown in r surface sapphire substrates is split
Line.
Examples of implementation prepare the electroluminescent properties figure of nonpolar ultraviolet LED with reference to figure 3；It can from electroluminescent properties figure
Know, the nonpolar ultraviolet LED emission wavelength manufactured in the present embodiment being grown in r surface sapphire substrates reaches peak at 330nm
Value, halfwidth is only 23.9nm, and this demonstrate it with good luminescent properties.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiment of the utility model is not by described
The limitation of embodiment, under other any Spirit Essences and principle without departing from the utility model made by change, modify, replace
In generation, simplifies combination, should be equivalent substitute mode, is included within the scope of protection of the utility model.
Claims (9)
1. a kind of nonpolarity ultraviolet LED, it is characterised in that：Include r surface sapphire substrates (1), low temperature AI GaN successively from bottom to top
Buffer layer (2), high temperature AlGaN buffer layers (3), undoped AlGaN layer (4), N-shaped doping AlGaN layer (5), AlGaN/AlGaN are super
Lattice layer (6), AlGaN/AlGaN multi-quantum well active regions (7), undoped AlGaN cap layers (8), low-temperature p-type adulterate AlGaN
Layer (9), p-type doping AlGaN layer (10) and p-type heavy doping AlGaN layer (11)；The LED is nonpolarity LED.
2. a kind of nonpolar ultraviolet LED according to claim 1, the thickness of the low temperature AI GaN buffer layers is 40~
60nm；The thickness of the high temperature AlGaN buffer layers is 400~600nm；The thickness of the undoped AlGaN layer be 300~
800nm。
3. a kind of nonpolar ultraviolet LED according to claim 1, the doping concentration of the N-shaped doping AlGaN layer be (1~
5)×1020cm-3；The thickness of the N-shaped doping AlGaN layer is 2~4 μm.
4. a kind of nonpolar ultraviolet LED according to claim 1, the AlGaN/AlGaN superlattice layers were 5~7 weeks
Phase structure is 3nm per layer thickness.
5. a kind of nonpolar ultraviolet LED according to claim 1, the AlGaN/AlGaN multi-quantum well active regions are 7
AlGaN well layer/AlGaN the barrier layer in period, wherein AlGaN well layer thickness are 12nm, and AlGaN barrier layer thicknesses are 3nm；From the bottom to top
The AlGaN barrier layer in preceding 6 periods is N-shaped doped layer, doped source Si, doping concentration 1017cm-3, the 7th period without
Doping.
6. a kind of nonpolar ultraviolet LED according to claim 1, the thickness of the undoped AlGaN cap layers is 10~
20nm。
7. a kind of nonpolar ultraviolet LED according to claim 1, the doped source of the low-temperature p-type doping AlGaN layer are
Mg, doping concentration are (1~5) × 1018cm-3；The thickness of the low-temperature p-type doping AlGaN layer is 80~100nm.
8. a kind of nonpolar ultraviolet LED according to claim 1, the doped source of the p-type doping AlGaN layer is Mg, is mixed
Miscellaneous a concentration of (1~5) × 1018cm-3；The thickness of the p-type doping AlGaN layer is 180~220nm.
9. a kind of nonpolar ultraviolet LED according to claim 1, the doped source of the p-type heavy doping AlGaN layer is Mg,
Doping concentration is (1~3) × 1019cm-3；The thickness of the p-type heavy doping AlGaN layer is 15~20nm.
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