CN207904392U - A kind of heating substrate, heating plate and humidification machine - Google Patents
A kind of heating substrate, heating plate and humidification machine Download PDFInfo
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- CN207904392U CN207904392U CN201721507022.2U CN201721507022U CN207904392U CN 207904392 U CN207904392 U CN 207904392U CN 201721507022 U CN201721507022 U CN 201721507022U CN 207904392 U CN207904392 U CN 207904392U
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/026—Anodisation with spark discharge
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/243—Chemical after-treatment using organic dyestuffs
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
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Abstract
The utility model discloses a kind of heating substrate, heating plate and humidification machines, including substrate body, and one layer of oxide ceramic layer handled through surface ceramic deposition is equipped on the substrate body surface.The heating of the utility model uses micro-arc oxidation process one layer of alumina ceramic layer of in-situ preparation on substrate with substrate, reach metallurgical binding between the ceramic layer and aluminum substrate, adhesive force is far longer than using the adhesive force between medium heat conduction film layer and aluminum substrate made of thick-film technique, and cold-resistant thermal shock resistance properties is splendid；In addition, the thermal conductivity of oxidation ceramic layer is high, the heat loss between substrate and oxide ceramics bed boundary is small, reduces temperature gradient, greatly improves the speed of the efficiency of heating surface and temperature control response of heating plate.
Description
Technical field
The utility model is related to the technical fields of heater element, more particularly to a kind of heating substrate, use the substrate
Heating plate and using the heating plate humidification machine.
Background technology
Aluminium alloy becomes middle low-temperature range heating base because having the characteristics that density is small, ductility is good and heat conductivility is excellent
The preferred material of plate.In existing heating plate, have one is on aluminium alloy base plate paste last layer made of flexible material
Heating film is provided with resistance heating module in heating film, is bonded together by insulating cement between heating film and aluminium alloy base plate,
Heat between the two is transmitted by insulating glue-line.This heating plate has the following problems：(1) the thermal conductivity pole of insulating cement
Low, the efficiency of heating surface is low and thermal inertia is big, is unable to precise control of temperature；(2) the lower heating membrane material of thermal cycle effect is easy aging, always
It easily falls off with substrate after change, seriously affects the use of heating plate；(3) heating film is made of flexible material, internal resistance heating
The yielding failure of module, may cause metallic resistance to fail, can not electrified regulation.
In existing heating plate, another kind is to make medium successively using thick-film technique on fine aluminium or aluminium alloy base plate to lead
Hotting mask layer, resistance heating film layer, it is finally armor coated on resistance heating layer.The advantages of this heating plate is, aluminum substrate,
Medium heat conduction film layer is the integrated design with resistance heating film layer, compared with the mode of pad pasting, reliability and heat transfer efficiency
It improves.But there is also problems with for such heating plate：(1) common medium heat conduction film layer and the heat of aluminum substrate are swollen
Swollen coefficient is inconsistent, and adhesive force between the two is inadequate, and when heating easily causes the cracking of medium heat conduction film layer and even removes, medium
Heater circuit in heat conduction film layer also will disconnect, and heating structure is destroyed, and heating plate is caused to fail；(2) medium heat conduction film layer
Thermal conductivity is relatively low, and the efficiency of heating surface is low and thermal inertia is big, is unable to precise control of temperature；(3) resistance of thick-film technique processing and manufacturing adds
The resistance uniformity of hotting mask layer is generally relatively low, influences the control accuracy of temperature.
In certain technical fields for needing to accurately control heating temperature, for example, noninvasive or Invasive vent ilation treatment system (such as
Lung ventilator) in, a humidification machine need to be generally set between lung ventilator and patient.Humidification machine includes the water pot and heating unit of water storage
Part, the function of heating element are the temperature and humidity of the positive pressure air of control, adjusting lung ventilator output, the air of output are made to reach
To rational level, with air flue drying, the mucous secretion for preventing patients with respiratory tract from being generated because the air humidity of sucking is relatively low
The symptoms such as more, respiratory tract discomfort.To realize that this function, humidification machine need to be according to the variations of environment temperature, humidity come quickly, accurately
Ground adjusts working condition and parameter, and the temperature of output gas and humidity is made to keep constant as far as possible.This function is in medical invasive machine
Seem even more important in tool ventilation therapy system, in this case, it is desirable to which heating element has high reliability, high heat
Conductance and low thermal inertia.
Utility model content
The purpose of this utility model is to be directed to technological deficiency existing in the prior art, is provided a kind of with high reliable
Property, high heat conductance and low thermal inertia heating substrate, " heating substrate " refers to having oxide ceramics in the utility model
The oxide ceramic layer of the substrate body of layer, the i.e. substrate body made of light metal alloy and its surface attachment is constituted.
The heating substrate, including substrate body, the substrate body surface are equipped with the oxygen with substrate body metallurgical binding
Compound ceramic layer.
The substrate body is aluminium alloy, magnesium alloy, titanium alloy.
The thickness of the substrate body is 1-2mm.
The thickness of the oxide ceramic layer is 10 μm -100 μm.
The oxide ceramic layer is located at all surface or part surface of substrate body.
The oxide ceramics layer surface has micropore, and filling is closed with hole sealing agent in micropore.
Second aspect, the utility model provide a kind of heating plate, including above-mentioned heating substrate, setting in heating substrate
On resistance heating layer and the packaging protection layer on resistance heating layer.
The resistance heating layer is metal thin film resistor, and thickness is 1-5 μm；Or the resistance heating layer is thick film electricity
Resistance, thickness are 10-50 μm.
The thickness of the packaging protection layer is 2-5mm.
The third aspect, the utility model provide a kind of humidification machine, include the water pot and heating element of water storage, the heating unit
Part is above-mentioned heating plate.
Compared with prior art, the utility model has the beneficial effects that：Heating provided by the utility model is used with substrate
Micro-arc oxidation process one layer of oxide ceramic layer of in-situ preparation in substrate body is metallurgical between the ceramic layer and substrate body
In conjunction with adhesive force is far longer than using the adhesive force between medium heat conduction film layer and aluminum substrate made of thick-film technique, the heating
It is splendid with the cold-resistant thermal shock resistance properties of substrate, there is high reliability.In addition, oxide ceramic layer is led as insulating materials and medium
Thermosphere, between basic ontology and resistance heating layer, thermal conductivity is high, and the heat loss between substrate body is small, reduces temperature
Spend gradient.It is the advantages of heating plate made of substrate the heating：Using the above-mentioned heating base of high heat conduction, low interface thermal resistance
Plate, the temperature gradient of heating plate is low when heating, and heat loss is small, more energy saving, efficient；Thermal inertia when heating is small, is greatly improved
The temperature control precision of heating plate and the speed of response, are highly suitable for needing the system of accurate temperature controlling, for example, with lung ventilator
Heating component in matching used humidification machine.
Description of the drawings
Fig. 1 show the structural schematic diagram of the utility model heating substrate；
Fig. 2 show the structural schematic diagram of the utility model heating plate；
Fig. 3 show the processing method flow chart of heating substrate in processing method one；
Fig. 4 show the processing method flow chart of heating substrate in processing method two；
Fig. 5 show the processing method flow chart of heating substrate in processing method three；
Fig. 6 show the processing method flow chart of heating substrate in processing method four；
Fig. 7 show the pattern of the resistance heating layer of the utility model heating plate；
Fig. 8 show the SEM micrograph of the oxide ceramics layer surface of one heating substrate of embodiment；
Fig. 9 show the SEM micrograph in one heating substrate vertical section of embodiment；
Figure 10 show the heating curves for the heating plate that one processing method of the utility model embodiment is process；
Figure 11 show hole-sealing technology flow chart in embodiment two.
Specific implementation mode
In noninvasive or Invasive vent ilation treatment system (such as lung ventilator), it is wet that one need to generally be arranged between lung ventilator and patient
Change device.Humidification machine includes the water pot and heating element of water storage, and the function of heating element is to control, is adjusting lung ventilator output just
The temperature and humidity for pressing air, makes the air of output reach rational level.To realize that this function, humidification machine need to be according to environment temperature
The variation of degree, humidity come quickly, accurately adjust working condition and parameter, so that the temperature of output gas and humidity is protected as far as possible
It holds constant.This function seems even more important in medical Invasive vent ilation treatment system, in this case, it is desirable to heating element
With high thermal conductivity, low thermal resistance, low thermal inertia and high reliability.And there are thermal coefficients for heating plate in the prior art
Low, the problems such as thermal resistance is big, thermal inertia is big, bottleneck are substrate Jie without suitable low cost, high heat conduction, low interface thermal resistance
Material.Heating plate is typically aluminium alloy base plate in the prior art, and aluminium oxide ceramics is both then excellent insulating materials, simultaneously
It is also highly heat-conductive material (thermal conductivity about 25W/Km), if the aluminium oxide of certain thickness densification can be formed in aluminum alloy surface
Ceramic layer is then likely to be obtained the heating substrate of high heat conduction.But on the one hand the technique of conventional thermal spraying or sintering cannot be prepared
The aluminium oxide ceramics of high-purity, coefficient of expansion difference an order of magnitude between another aspect ceramic layer and aluminum substrate, and the two it
Between there are apparent interface, thermal stress be easy to cause ceramic layer cracking so that alumina ceramic layer can not be applied to aluminium alloy table
Face.
Micro-arc oxidation process, using few (anode oxidation process is then very universal), is typically employed in military project neck in industrial quarters
Domain, for aluminium alloy, magnesium alloy, titanium alloy surface processing, in the certain thickness base material oxygen of such light metal surface growth in situ
Compound ceramic layer promotes case hardness, corrosion resistance, and the characteristics of technique is：(1) ceramic layer is the pure zirconia of substrate metal
Object ceramic layer, film layer interior solid, uniform, thermal conductivity height；(2) ceramic layer and base material are metallurgical binding, without apparent interface,
Interface resistance is close to zero；(3) binding force between ceramic layer and base material is strong, even if coefficient of thermal expansion difference between the two is very
Greatly, the structure of ceramic layer is still stablized under the effect of cold cycling thermal stress, will not be cracked；(4) heat resistanceheat resistant is shaken excellent performance.Base
In this, present patent application proposition prepares oxide ceramic layer with micro-arc oxidation process in aluminium base plate surface, and is largely putting into practice
On the basis of, discovery also needs to handle the aluminum substrate after differential arc oxidation, such as mechanical grinding removal surface porosity layer, sealing of hole
(surface-sealing is carried out especially with DLC film, on the one hand can solve other polymer hole sealing agents to the unfavorable of substrate thermal conductivity
Influence, on the other hand can promote the electrical insulation capability of substrate) and extra hole sealing agent is removed, then in the surface ceramii layer
Prepare resistance heating layer and packaging protection layer.
Below in conjunction with specific embodiment, the content of the utility model is further illustrated, and make the utility model into one
Step illustrates, but these embodiments absolutely not limit the utility model.
First part：Heating substrate
The utility model provides a kind of heating substrate 2, as shown in Figure 1, comprising a substrate body 10 and in substrate body
The oxide ceramic layer 20 that 10 surfaces are handled through surface ceramic deposition.
Wherein, 10 optional material of substrate body includes the light metal alloys such as aluminium alloy, magnesium alloy, titanium alloy, is preferably selected
With aluminium alloy base plate, such as aluminium alloy 6061, which has splendid processability, excellent solderability, high tenacity and not
The excellent characteristic such as yielding.
The oxide ceramic layer 20 is through the micro-arc oxidation process oxide that growth in situ goes out on 10 surface of substrate body
Ceramic membrane, as shown in Figure 1, i.e. dielectric layer.Oxide ceramic layer 20 is not significantly increased the overall thickness of substrate body 10, oxygen
The thickness range of compound ceramic layer 20 about 10 μm of -100 μm, preferably from about 20-60 μm, more preferable 20-40 μm, oxide ceramic layer with
Metallurgical binding between substrate, interface resistance is small, this be sintered on metal heat-conducting substrate using thick-film technique made of medium
Layer has apparent difference, and the thickness of dielectric layers of thick-film technique is generally at 100 μm or more (between the dielectric layer and substrate of thick-film technique
By part physical and chemical bonds, there are apparent interfaces between dielectric layer and substrate).In processing, oxide ceramics
Layer 20 can cover all surfaces (i.e. the upper surface, lower surface and side of substrate body) of substrate body 10, can also only cover
Cover the local surfaces of substrate body 10.
It is attached between dielectric layer and basic ontology due to being metallurgical binding between oxide ceramic layer 20 and substrate body 10
Put forth effort by force, and interface thermal conductivity loss is small；The thermal conductivity of oxide ceramic layer 20 is more than 20W/m.K, significantly larger than existing use
Spraying, silk-screen are sintered thermal conductivity (the dielectric layer thermal conductivity that thick-film technique and the prior art obtain for the dielectric layer to be formed<10W/
M.K) so that the thermal conductivity of obtained heating substrate entirety is high, i.e. heat transfer efficiency higher, between dielectric layer and basic ontology
Temperature gradient is lower, and the power transmitted needed for identical heat is lower, and the rate of heating, cooling also faster, is applicable to accurate
In the Related product of temperature control.
There are four types of processing methods for above-mentioned heating substrate, specific as follows：
Processing method one, flow is as shown in Figure 3：
(1), it is machined：Light metal alloy is molded into required shape, as substrate body；
(2), substrate body is surface-treated：Remove the grease on substrate body surface；
(3), differential arc oxidation：(can be all surface, can also be part surface) passes through on the surface of substrate body
Micro-arc oxidation process forms the oxide ceramic film that a layer thickness is 10-100 μm, i.e. oxide ceramic layer, oxide ceramics
Layer can be understood as the oxide ceramic film of the growth in situ on substrate body surface, and differential arc oxidation is to be placed in substrate body
It is completed in electrolyte.In the part surface differential arc oxidation of substrate body, the base of differential arc oxidation will first can be not required to insulating materials
Plate body surface covers, and only exposes and needs the substrate body surface of differential arc oxidation, then by substrate body be placed in electrolyte into
Row differential arc oxidation.
(4), sealing of hole：
Since oxide ceramic layer is there are the micron-sized micropore similar to volcano mouth structure, moisture when use in air
When can enter in micropore, and process electric hot plate, subsequent adding thermal resistance layer material can be also filled into micropore, cause punch through voltage
It reduces, influences its insulation performance.Therefore closing is filled to the micropore in oxide ceramic layer with hole sealing agent.It is specific available
Following two mode sealing of holes：
Sealing of hole mode one：Prior under vacuum condition in thermosetting macromolecule resin (such as polymethacrylates, organosilicon tree
Fat etc.) in dipping, be again heated to 120 DEG C -250 DEG C solidification 30min-120min；
Sealing of hole mode two：Thermosetting acrylic resin class electrophoretic paint ability cathode electrophoresis is first used, then at 150-210 DEG C of baking-curing
15-60min。
(5), hole sealing agent is removed：Mechanical grinding removes the hole sealing agent for remaining in oxide ceramics layer surface, exposes oxide
Ceramic layer.
Processing method two, flow is as shown in Figure 4：
(1), it is machined：With processing method one；
(2), substrate body is surface-treated：With processing method one；
(3), differential arc oxidation：With processing method one；
(4), mechanical grinding, polishing：Oxide ceramic layer surface in micro-arc oxidation process can form micron-sized similar
In the micropore of volcano mouth structure, i.e., one layer of weaker zone is formed in oxide ceramics layer surface, pore size is big, and roughness is high, knot
Structure is loose, and more crisp, and the binding force between the oxide ceramic layer of bottom densification is weaker.Therefore with mechanical grinding, throwing
Light removes the weaker zone of oxide ceramics layer surface.After mechanical grinding, polishing, oxide ceramics layer thickness reduces about 2-3 μ
m；
(5), sealing of hole：Although previous step, which is polished, eliminates the weaker zone on surface, oxide ceramic layer still has micropore,
Therefore sealing of hole is also needed to, sealing of hole is the same as processing method one；
(6), hole sealing agent is removed：With processing method one.
Processing method three, flow is as shown in Figure 5：
(1), it is machined：With processing method one；
(2), substrate body is surface-treated：With processing method one；
(3), differential arc oxidation：Hole sealing agent is first added in the electrolyte of differential arc oxidation, then (can on the surface of substrate body
Can also be part surface to be all surface) oxide that a layer thickness is 10-100 μm is formed by micro-arc oxidation process
Ceramic membrane, i.e. oxide ceramic layer.It is completed at the same time sealing of hole during film forming in this way, subsequent sealing of hole and removal can be omitted
The step of hole sealing agent.Due to only needing the growth in situ oxide ceramic film on substrate body surface, insulation can be first used
Material covers the substrate body surface for being not required to differential arc oxidation, only exposes the substrate body surface for needing differential arc oxidation, then will
Substrate body, which is placed in electrolyte, carries out differential arc oxidation.
Processing method four, flow is as shown in Figure 6：
(1), it is machined：With processing method one；
(2), substrate body is surface-treated：With processing method one；
(3), differential arc oxidation：With processing method one；
(4), mechanical grinding, polishing：With processing method two；
(5), sealing of hole：In oxide ceramics layer surface, with differential of the arc ion plating plating last layer depositing diamond-like film, (DLC is thin
Film), about 1-5 μm of film thickness.The DLC film can not only be used for the medium of sealing of hole, and the insulating heat-conductive of heating substrate can be improved
Performance.
Second part：Heating plate
On the basis of the above heating substrate, the utility model also provides a kind of heating plate 1, cross-section structure such as Fig. 2
It is shown, including above-mentioned heating substrate 2,1 outer surface of resistance heating layer 30 and heating plate that is arranged on heating substrate 2
Be located at resistance heating layer 30 on packaging protection layer 40.
Wherein, resistance heating layer 30 is arranged on heating substrate, and resistance heating layer 30 is by a whole narrow resistance films
It uniformly, is densely arranged on the oxide ceramic layer 20 of heating substrate according to specific arrangement mode and covers big portion absolutely
The heating upper surface of base plate divided.I.e. resistance heating layer 30 is a resistor stripe, which is covered in the oxidation of heating substrate
On object ceramic layer 20, and resistor stripe will cover whole upper surfaces of heating substrate as much as possible, to increase heating surface (area) (HS；
Resistor stripe short circuit and heating are uneven in order to prevent, resistor stripe in heating with not intersecting on substrate, not being overlapped, preferably with it is symmetrical,
Or regular pattern is arranged, and is a kind of layout of resistance heating layer circuit shown in Fig. 7.Resistance heating layer 30 is optional
Material includes：Metallic film (such as Cu, Cu-Ni, Fe-Ni, Ni-Cr metal or alloy film), thick-film resistor paste, chip electricity
Resistance etc., can also be used the resistance slurry of low temperature curing type.Resistance heating layer 30 at least there are two terminals, and respectively with an electrode
Form Ohmic contact；Electrode can be thin metal layer electrode, and the materials such as Cu, Ag are made, such as by silver-colored series conductive slurry or carbon series conductive
Slurry is process through thick-film technique.Temperature sensor can also be set on resistance heating layer, the temperature for measuring heating plate.
Packaging protection layer 40 is arranged on resistance heating layer 30 and is completely covered the heating base of resistance heating layer
Plate surface protects heating layer, selects epoxy resin, phenolic resin, polyurethane, organic siliconresin, polytetrafluoroethylene (PTFE), gathers
Acid imide etc. material.The packaging protection layer 40 is with the following functions：(1) waterproof, air-prevention intrusion, protects oxide ceramic layer
20 and resistance heating layer 30 be not corroded, ensure its safety in utilization, extend its service life；(2) it is electrically insulated, prevents from leaking electricity；
(3) thermal insulation makes the heat that resistance heating layer 30 generates be conducted as few as possible to packaging protection layer, improves the efficiency of heating surface；(4)
Buffering, prevents heating plate from falling damage.
The processing method of above-mentioned heating plate：
I) heating substrate, is made：See the processing method of above-mentioned heating substrate；
II) resistance heating layer, is made：Following two modes can be used to make：
Mode one：Using PVD coating process (such as vacuum evaporation, sputtering on the oxide ceramic layer of heating substrate
(Sputtering), pulsed laser deposition (PLD), differential of the arc ion plating etc.) prepare one layer thin of metallic resistance film, thickness 1-
5 μm, for the lower metal of resistivity such as Cu, Ni etc., metal electricity can be increased after PVD plated films in the way of electroless plating
The thickness of film is hindered to predetermined value；Then metallic resistance film is etched into the resistance heating layer with specific width and pattern form,
And resistance heating layer has at least two terminals to be connected with electrode.The prior art is usually by Cu thin slices (thickness is at 35 μm or more)
It is etched into the specification and shape of design, is then fixed on substrate by way of gluing；Using this gluing Cu
Heating plate has the following problems made of the technique of piece：(1) thermal coefficient of cementing medium is low；(2) between Cu thin slices and substrate
Interface resistance it is big；(3) bond medium is high molecular material, easy to aging after multiple cold cycling, is caused under adhesion strength
Drop；This several points can cause the temperature gradient of heating plate big, and thermal inertia is big in heating process, cannot quickly, precise control of temperature,
And reliability is poor.
Mode two：Thick-film technique is used on the oxide ceramic layer of heating substrate, it will by way of silk-screen printing
Resistance slurry is coated in the surface of oxide ceramic layer, then passes through sintering or low-temperature setting (low-temperature setting is no more than 250 DEG C)
Make the resistance slurry of coating cure and be formed between oxide ceramic layer reliably to connect, be made with specific width and pattern
The resistance heating layer of shape, thickness is 10-50 μm, and resistance heating layer has at least two terminals to be connected with electrode.
III) packaging protection layer, is made：In resistance heating layer upper surface coating epoxy resin, phenolic resin, polyurethane, have
The materials such as machine silicones, polytetrafluoroethylene (PTFE), polyimides form packaging protection layer as protective layer.
Embodiment one：
Substrate body material：6061 aluminium alloys, surface polishing, thickness about 1-2mm；
Process：
(1), it is machined：Substrate body is molded into required shape by punching, chamfering, punching press etc.；
(2), substrate body is surface-treated：The substrate body for processing shape is immersed in ethyl alcohol, acetone and other organic solvent,
Or in NaOH solution, it is cleaned by ultrasonic the grease on removal substrate body surface.
(3), differential arc oxidation：Substrate body after surface treatment is put into differential arc oxidation electrolytic cell and carries out differential arc oxidation,
Oxide ceramic layer is formed in substrate body, clean and is dried, and the oxide ceramics that Rockwell hardness is about 600-800HV is obtained
Layer；In differential arc oxidation：
A) electrolyte：10-15g/L containing sodium metasilicate, calgon 8-12g/L, ethylene glycol 0.1-1.0g/L and glycerine
The basal liquid of 0.1-0.6g/L adjusts the pH value of basal liquid to 8-12 with KOH solution.
B) differential arc oxidation parameter：
It is immersed substrate body to be oxidized as anode in electrolyte, electrolyte temperature：20 DEG C -30 DEG C, constant temperature stirring
Current density：5-15A/dm2
Voltage：300-700V
DC pulse frequency：500Hz
Duty ratio：20%-50%
Reaction time：20-60min.
The SEM micrograph for the oxide ceramics layer surface that Fig. 8 is, it is seen that have micron order blind in its surface porosity
Hole then follows the steps below.
(4), mechanical grinding, polishing：The loose blind hole layer of oxide ceramics layer surface is removed, thickness is thinned about 3 μm；
(5), sealing of hole：First the substrate after differential arc oxidation is placed in sealing of hole container, then to sealing of hole container vacuum-pumping, later
Dichtol-HTR-#0977 hole sealing agents are injected in sealing of hole container, hole sealing agent is made to coat substrate completely, under the action of negative pressure, envelope
Hole agent is penetrated into the micropore of oxide ceramics film surface, is filled to micropore.After vacuum impregnation about 15-30 minutes, take out clear
Except the hole sealing agent of remained on surface, it is subsequently placed in oven and toasts 2-3 hours for 250 DEG C.
(6), grinding, polishing：The remaining hole sealing agent of substrate surface is removed, exposes oxide ceramic layer, cleans and dry
Heating substrate is obtained after dry.The thermal conductivity of heating substrate is 20W/Km-25W/Km, breakdown voltage ＞ 500V.
(7), resistance heating layer is made：By low-temperature resistance slurry silk-screen on the oxide ceramic layer of heating substrate, it
Low-temperature sintering cures afterwards, forms resistance heating layer as shown in Figure 7；Or with PVD (Physical VaporDeposition,
Physical vapour deposition (PVD)) method heating with substrate surface deposit Cu-Ni alloy firms, then obtained as shown in Figure 7 through overetch
Resistance heating layer.
(8), packaging protection layer is made：Other regions except electrode section will be heated the substrate with the filling of adhesion type epoxy resin
Sealing coats, and forms packaging protection layer, and thickness about 2-5mm obtains heating plate.
Embodiment two：
Substrate body material：With embodiment one；
Process, as shown in figure 11,：
(1), it is machined：With embodiment one；
(2), substrate body is surface-treated：With embodiment one.
(3), differential arc oxidation：With embodiment one；In differential arc oxidation：
A) electrolyte：10-15g/L containing sodium metasilicate, sodium phosphate 8-12g/L, sodium citrate 0.1-0.6g/L, ethylene glycol 0.1-
The basal liquid of 1.0g/L, glycerine 0.1-0.6g/L adjust the pH value of basal liquid to 8-12 with KOH solution.
B) differential arc oxidation parameter：
It is immersed substrate body to be oxidized as anode in electrolyte, electrolyte temperature：20 DEG C -30 DEG C, constant temperature stirring
Current density：5-15A/dm2,
Voltage：500-700V,
DC pulse frequency：200-500Hz,
Duty ratio：20%-50%,
Reaction time：20-40min.
(4), sealing of hole：After thermosetting acrylic resin class electrophoretic paint is mixed with deionized water in ability cathode electrophoresis slot, fill
Divide stirring that electrophoretic paint is made to be uniformly dispersed as electrophoresis liquid.Electrophoresis liquid recycles in electrophoresis tank and temperature is at 25 DEG C or so.By substrate
It is placed in electrophoresis tank and keeps good electrical contact with cathode, connect electrophoresis power, setting electric field is 10-50V/cm, when electrophoresis
Between 30s-2min.After electrophoresis is completed, cleaned by deionized water, wind is cut substrate is placed in baking oven after drying among, 180 DEG C-
210 DEG C are toasted about 30 minutes, and electrophoretic paint is made to cure.
(5), grinding, polishing：The electrophoretic paint of sanding and polishing processing removal substrate surface, exposes oxide ceramic layer,
Obtain heating substrate.The thermal conductivity of heating substrate is 20W/Km-25W/Km, breakdown voltage ＞ 500V.
(6), resistance heating layer is made：Fe-Ni-Cr resistance alloys films are deposited using PVD process on heating substrate,
Then film is etched into the pattern of design, to meet load and the power density requirements of design.
(7), packaging protection layer is made：As in the first embodiment, obtaining heating plate.
Embodiment three
Substrate body material：With embodiment one；
Process：
(1), it is machined：With embodiment one；
(1), substrate body is surface-treated：With embodiment one.
(3), differential arc oxidation：With embodiment one；In differential arc oxidation：
A) electrolyte：10-15g/L containing sodium metasilicate, sodium phosphate 8-12g/L, sodium citrate 0.1-0.6g/L, ethylene glycol 0.1-
The basal liquid of 1.0g/L, glycerine 0.1-1.0g/L adjust the pH value of basal liquid to 8-12 with KOH solution；Add 0.1-
0.5g/L grain sizes be 10-20nm hole sealing agent is nano alumina powder jointed and 0.1-0.6g/L dispersant polyoxyethylenealkylphenol ethers
(APEO) or high-carbon fatty alcohol polyoxyethylene ether (AEO) closing to micropore, is completed during forming oxide ceramic layer.
B) differential arc oxidation parameter：
It is immersed substrate body to be oxidized as anode in electrolyte, electrolyte temperature：20 DEG C -30 DEG C, constant temperature stirring
Current density：5-15A/dm2,
Voltage：300-700V,
DC pulse frequency：500Hz,
Duty ratio：20%-50%,
Reaction time：20-50min；
Differential arc oxidation coating is removed, cleans and dries, obtain heating substrate.The insulation resistance ＞ of the heating substrate
10M Ω, breakdown voltage>500V, thermal conductivity are more than 20W/Km.
(6), resistance heating layer is made：Ni-Cr alloy resistance film is deposited using PVD process on heating substrate, so
Film is etched into the pattern of design afterwards, to meet load and the power density requirements of design.
(7), packaging protection layer is made：As in the first embodiment, obtaining heating plate.
Example IV
Substrate body material：With embodiment one；
Process：
(1), it is machined：With embodiment one；
(2), substrate body is surface-treated：With embodiment one.
(3), differential arc oxidation：As in the first embodiment, obtaining heating substrate.The insulation resistance ＞ 10M Ω of the heating substrate,
Breakdown voltage ＞ 500V, thermal conductivity ＞ 20W/Km.
(4), surface polishing, polishing：The weaker zone of substrate surface is removed, is cleaned and dry.
(5), Cr/DLC films are made：Substrate is placed in vacuum chamber with Special hanger be evacuated to (1.0-5.0) ×
10-3Pa；It is passed through Ar gas in vacuum chamber, makes vacuum chamber room pressure in 0.1-0.3Pa, applies negative pulse on substrate hanger
Bias, bias 1000-2000V, duty ratio 15%-30% carry out icon bombardment cleaning 3-5 minutes to substrate；Adjust pulse
It is biased into 100V, duty ratio 20%, vacuum degree 0.1Pa enables graphite target arc, arc current about 20A, arc voltage 20-25V, into
Row DLC film deposits, about 200 DEG C of depositing temperature, sedimentation time about 10-60 minutes, about 1-5 μm of DLC film thickness；Start metal Cr
Target deposits Cr/DLC laminated films, deposits 1-3 minutes, Cr/DLC laminated films thickness about 50-200nm.Deposit Cr/DLC films
Heating substrate afterwards, Vickers hardness ＞ 1000HV；Breakdown voltage ＞ 600V, breakdown voltage is significantly improved before relatively depositing, and
Cr/DLC films can play the role of sealing of hole, can save sealing of hole step.The effect of Cr/DLC films is：(1) compared to it
Its hole sealing agent, influence smaller of the Cr/DLC films to substrate thermal conductivity；(2) dielectric strength of heating substrate can be promoted；And
Cr/DLC films can be used as transition zone, promote the binding force between follow-up Cr/DLC films and resistance heating layer.
(6), resistance heating layer is made：Cu-Ni resistance alloys films are deposited using PVD process on heating substrate, this
Step can be continuously finished with step (5) in same vacuum cavity, then film is etched into the pattern of design, be set with meeting
The load of meter and power density requirements.
(7), packaging protection layer is made：As in the first embodiment, obtaining heating plate.
Experiment
By taking the heating plate of embodiment one as an example, substrate body thickness 1.5mm, about 30 μm of oxide ceramics layer thickness, to splash
It penetrates technique and prepares CuNi resistance alloys film as heating element, about 30 Ω of resistance, with 24V DC constant voltage power supplies for electrical heating,
Power 19W, power density about 0.25W/cm2.
The cross section that differential arc oxidation metacoxal plate is observed under electronic scanner microscope, obtains microphoto, as shown in Figure 9.
Fig. 9 is the SEM micrograph in one heating substrate section of embodiment, it is seen that is formd between oxide ceramic layer and substrate body
Metallurgical binding, oxide ceramic layer are connect with substrate body with the micro- molten transition region of metallurgy type, and the adhesive force of oxide ceramic layer is remote
The adhesive force being much better than between the dielectric layer formed through techniques such as anodic oxidation, spraying, sintering and substrate body.In addition, oxidation
Object ceramic layer inner tissue is fine and close, and there is no the perforation through oxide ceramic layer, have higher intensity and electrical insulating property.Through upper
Micro-arc oxidation process surface ceramic deposition is stated treated substrate body, is resistant to 90 ° of bendings, film layer tensile stress by bending when bending
Deformation, film layer stripping and film layer cracking do not occur for the surface of Tensile after bending.
Thermal shock test is carried out with substrate to one heating of embodiment：It will treated that substrate is heated to through above-mentioned differential arc oxidation
200 DEG C or more, then substrate is put into cold water rapidly, takes out, recycle 5 times after substrate cooling, observation finds oxide pottery
The defects of enamel coating is peeling-off, cracking, i.e., the substrate cold-and-heat resistent impact property handled through above-mentioned micro-arc oxidation process is non-
Chang Youyi is suitable as to heat the substrate.
With the temperature of one heater plate surface of temperature sensor measurement embodiment, heating curves is as shown in Figure 10.
Heating after ten minutes, heating plate temperature upper and lower surfaces of, upper and lower temperature is measured using temperature sensor respectively
Difference is less than 2 DEG C, and the heating plate in the prior art temperature difference upper and lower surfaces of shows the heating plate generally at 5-10 DEG C or so
Heat conductivility is good, and temperature gradient is small, and the efficiency of heating surface is apparently higher than the heating panel products that the prior art is processed.
Cold shock testing：After the heating plate electrified regulation of embodiment one to 100 DEG C of temperatures above, direct current is disconnected
Source is directly steeped in cold water, after plate to be heated cooling, is taken out heating plate and is measured resistance after drying, electrified regulation repeats 10
Cycle, the room temperature resistance of heating plate is unchanged, can normal heating.Prove that the heating plate of the utility model has certain cold-and-heat resistent
Impact property can avoid user and heating plate or component with this heating plate be accidentally directly placed into water in 100 DEG C or so of temperature
In and cause heating plate to fail, improve the reliability of heating plate.
The heating substrate of other embodiments also has similar effect with heating plate, then this is not repeated one by one.
The above is only the preferred embodiment of the utility model, it is noted that for the general of the art
For logical technical staff, without departing from the principle of this utility model, several improvements and modifications can also be made, these change
Into the content that also should be regarded as the utility model with retouching.
Claims (5)
1. a kind of heating substrate, including substrate body, which is characterized in that the substrate body surface is equipped with and substrate body smelting
The oxide ceramic layer that gold combines；The substrate body is aluminium alloy, magnesium alloy, titanium alloy, and the thickness of the substrate body is
The thickness of 1-2mm, the oxide ceramic layer are 10 μm -100 μm, and the oxide ceramic layer is located at all tables of substrate body
Face or part surface, the oxide ceramics layer surface has micropore, and filling is closed with hole sealing agent in micropore.
2. a kind of heating plate, which is characterized in that including heating substrate described in claim 1, be arranged on heating substrate
Resistance heating layer and the packaging protection layer on resistance heating layer.
3. heating plate according to claim 2, which is characterized in that the resistance heating layer is metal thin film resistor, thickness
It is 1-5 μm；Or the resistance heating layer is thick-film resistor, thickness is 10-50 μm.
4. heating plate according to claim 3, which is characterized in that the thickness of the packaging protection layer is 2-5mm.
5. a kind of humidification machine includes the water pot and heating element of water storage, which is characterized in that the heating element is claim 2-
4 any heating plates.
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| CN201721507022.2U Active CN207904392U (en) | 2016-11-11 | 2017-11-13 | A kind of heating substrate, heating plate and humidification machine |
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| CN109234780A (en) * | 2018-08-14 | 2019-01-18 | 天长市京发铝业有限公司 | A kind of oxidation treatment method of aluminum substrate |
| WO2020243955A1 (en) * | 2019-06-06 | 2020-12-10 | Vincent Medical (Dong Guan) Manufacturing Co., Ltd. | An improved heater plate |
| CN110234182A (en) * | 2019-07-29 | 2019-09-13 | 惠州市正胜精工科技有限公司 | A kind of production process technique of fever tablet |
| CN110359075B (en) * | 2019-08-27 | 2020-06-26 | 北京化工大学 | Titanium alloy coating material and preparation method and application thereof |
| CN110784946A (en) * | 2019-11-12 | 2020-02-11 | 中国商用飞机有限责任公司 | Electrical heating film structure and method of forming the same |
| CN111132394A (en) * | 2019-12-10 | 2020-05-08 | 沈阳化工大学 | Preparation method of carbon crystal/ceramic electric heating plate |
| CN111962074A (en) * | 2020-08-18 | 2020-11-20 | 芜湖艾尔达科技有限责任公司 | Method for manufacturing metal heating body |
| CN114073337A (en) * | 2020-08-19 | 2022-02-22 | 深圳市新宜康创新技术有限公司 | Method for manufacturing heating non-combustion device |
| CN114305071B (en) * | 2020-10-10 | 2023-03-03 | 佛山市顺德区美的电热电器制造有限公司 | Cover plate of cooking appliance, cooking appliance and manufacturing method of cover plate |
| CN112301402A (en) * | 2020-11-02 | 2021-02-02 | 东北大学 | Novel magnesium alloy thermal barrier coating and preparation method thereof |
| CN113249762A (en) * | 2021-05-28 | 2021-08-13 | 黑龙江科技大学 | Preparation method of graphene high-temperature heating aluminum plate |
| CN114734211A (en) * | 2022-05-06 | 2022-07-12 | 东莞市合力激光设备有限公司 | Mica heating plate processing technology |
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| CN100510197C (en) * | 2004-12-20 | 2009-07-08 | 中国科学院金属研究所 | Element of arc oxidation electrolyte of environmental protection type magnesium alloy, and method of element of arc oxidation |
| CN101469439A (en) * | 2007-12-25 | 2009-07-01 | 中国科学院兰州化学物理研究所 | Preparation of magnesium alloy surface high corrosion resistance differential arc oxidation compound film |
| CN101476143B (en) * | 2007-12-31 | 2010-10-06 | 比亚迪股份有限公司 | Differential arc oxidation electrolytic solution and differential arc oxidation method |
| TWI418664B (en) * | 2011-11-04 | 2013-12-11 | Taiwan Puritic Corp | Surface processing method on valve metal using plasma electrolytic oxidation |
| CN102560591B (en) * | 2011-12-01 | 2014-07-16 | 浙江吉利汽车研究院有限公司 | Micro-arc oxidation electrolyte and micro-arc oxidation method |
| CN102808210B (en) * | 2012-08-17 | 2015-04-22 | 宁波市瑞通新材料科技有限公司 | Micro-arc oxidation surface treatment method and product prepared by same |
| TWI542050B (en) * | 2012-12-25 | 2016-07-11 | 龍華科技大學 | Led composite substrate for high heat dissipation and method for manufacturing the same |
| TWI778727B (en) * | 2014-03-13 | 2022-09-21 | 澳大利亞商瑞思邁私人股份有限公司 | A humidifier for a respiratory therapy device |
| CN104195569B (en) * | 2014-08-21 | 2016-08-17 | 中国电子科技集团公司第三十八研究所 | A kind of magnesium alloy microwave components lid surface compounding method |
| CN105603488A (en) * | 2016-03-25 | 2016-05-25 | 北京石油化工学院 | Micro-arc oxidation electrolyte and method for preparing colored ceramic layers on matrix surface |
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