CN207460102U - A kind of frequency mixer based on mutual conductance coefficient correcting principle - Google Patents
A kind of frequency mixer based on mutual conductance coefficient correcting principle Download PDFInfo
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Abstract
The utility model is related to a kind of frequency mixers based on mutual conductance coefficient correcting principle, and including transconductance stage circuit, switching stage circuit and the load stage circuit being sequentially connected electrically, transconductance stage circuit uses mutual conductance coefficient correcting principle and source degeneracy induction structure；Radio frequency voltage signal is converted into current radio frequency signal by transconductance stage circuit for accessing radio frequency voltage signal；Switching stage circuit is used to access local oscillation signal and current radio frequency signal, and it is turned in turn according to the multiple switch pipe that local oscillation signal controls switching stage circuit to set, and turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generate current intermediate frequency signal；Load stage circuit exports for current intermediate frequency signal to be converted into voltage signal.Transconductance stage circuit uses mutual conductance coefficient correcting principle in the utility model, and the linearity of frequency mixer is improved on the basis of low-power consumption；Source degeneracy induction structure is used simultaneously, further improves the conversion gain and the linearity of circuit.
Description
Technical field
The utility model is related to a kind of frequency mixers, and in particular to a kind of frequency mixer based on mutual conductance coefficient correcting principle.
Background technology
Since in recent years, in the society of current rapid development of information technology, wireless application is in fields such as mobile phone, PCs
It is a large amount of to increase so that people are continuously increased communication equipment demand, and higher and higher to its performance requirement, wireless communication
Rapid growth result in the design of low-power consumption RF IC.Radio-frequency transmitter is the important module of wireless communication, it
Performance indicator affects entire wireless communication system.Wherein the design of frequency mixer plays important angle in radio-frequency system
Color, while be also the most strong part of radio-frequency front-end signal, so the performance indicator of frequency mixer affects the property of entire radio-frequency front-end
Energy index, therefore the performance for improving frequency mixer has great importance.Small-signal present on radio frequency receiver is first by low
Noise amplifier amplifies, and is then delivered to frequency mixer.Therefore, it is necessary to conversion gain, noise, line in the design of frequency mixer
The performance indicators such as property degree, power consumption, isolation are considered, and are compromised to the performance parameter of frequency mixer.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of frequency mixer based on mutual conductance coefficient correcting principle,
The performance of frequency mixer is improved on the basis of low-power consumption.
The technical solution that the utility model solves above-mentioned technical problem is as follows：It is a kind of mixed based on mutual conductance coefficient correcting principle
Frequency device, including transconductance stage circuit, switching stage circuit and the load stage circuit being sequentially connected electrically, wherein, the transconductance stage circuit is adopted
With mutual conductance coefficient correcting principle and source degeneracy induction structure；
The transconductance stage circuit is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into radio-frequency current
Signal, and Reusability is carried out to current radio frequency signal；
The switching stage circuit is used to access local oscillation signal and current radio frequency signal, and controls institute according to local oscillation signal
State switching stage circuit setting multiple switch pipe turn in turn, and using multiple switch pipe turn in turn to current radio frequency signal into
Row switch modulation, generation current intermediate frequency signal are transmitted to load stage circuit；
The load stage circuit, is used to current intermediate frequency signal being converted into voltage signal exporting；
The transconductance stage circuit includes transistor M1~M7, inductance L1, capacitance C1, capacitance C2, resistance R1, resistance R2, electricity
Hinder Rb1 and resistance Rb2；The positive terminal RF+ connections of the grid and radio frequency voltage signal of the transistor M1, the transistor M1's
Drain electrode is connected with one end of the inductance L1, the source level ground connection of the transistor M1, the other end and the crystalline substance of the inductance L1
The drain electrode connection of body pipe M2；The grid of the transistor M3 is connected with the grid of the transistor M4, the leakage of the transistor M3
Pole is connected with the drain electrode of the transistor M1, and the drain electrode of the transistor M3 is also connected with the switching stage circuit, the crystal
The source level ground connection of pipe M3；The negative pole end RF- connections of the grid and radio frequency voltage signal of the transistor M2, the transistor M2's
Source level is grounded；The drain electrode of the transistor M4 is connected with the drain electrode of the transistor M2, the drain electrode of the transistor M4 also with institute
State the connection of switching stage circuit, the source level ground connection of the transistor M4；One end connection DC offset voltage v2 of the resistance Rb2,
The other end of the resistance Rb2 is connected with the grid of the transistor M3；The grid and radio frequency voltage signal of the transistor M5
Positive terminal RF+ connections, the drain electrode of the transistor M5 is connected with one end of the capacitance C1, and the source level of the transistor M5 connects
Ground, the other end of the capacitance C1 are connected with the grid of the transistor M7；The grid of the transistor M6 is believed with radio-frequency voltage
Number negative pole end RF- connections, the source level ground connection of the transistor M6, drain electrode and the leakage of the transistor M5 of the transistor M6
Pole connects；One end of the resistance Rb1 is connected with the grid of the transistor M7, the other end connection direct current of the resistance Rb1
Bias voltage V1；The source level ground connection of the transistor M7, the drain electrode of the transistor M7 are connected with one end of the resistance R2, institute
State the other end connection voltage VDD of R2；One end of the resistance R1 is connected with the drain electrode of the transistor M5, the resistance R1's
Other end connection voltage VDD；One end of the capacitance C2 is connected with the drain electrode of the transistor M7, the other end of the capacitance C2
It is connected with the grid of the transistor M4.
The beneficial effects of the utility model are：In a kind of frequency mixer based on mutual conductance coefficient correcting principle of the utility model
In, transconductance stage circuit uses mutual conductance coefficient correcting principle, and the linearity of frequency mixer is improved on the basis of low-power consumption；It adopts simultaneously
With source degeneracy induction structure, the conversion gain and the linearity of circuit are further improved.
Based on the above technical solutions, the utility model can also do following improvement.
Further, the grid of the switching stage circuit including transistor M8~M11, the transistor M8 and local oscillation signal
Positive terminal LO+ connections, the source level of the transistor M8 are connected with the drain electrode of the transistor M1, the drain electrode of the transistor M8 with
The load stage circuit connection；The negative pole end LO- connections of the grid and local oscillation signal of the transistor M9, the transistor M9's
Source level is connected with the source electrode of the transistor M8, and the drain electrode of the transistor M9 is connected with the drain electrode of the transistor M11；It is described
The negative pole end LO- connections of the grid and local oscillation signal of transistor M10, the source level of the transistor M10 is with the transistor M2's
Drain electrode connection, the drain electrode of the transistor M10 are connected with the drain electrode of the transistor M8；The grid of the transistor M11 and sheet
It shakes the negative pole end LO+ connections of signal, the source level of the transistor M11 is connected with the drain electrode of the transistor M2, the transistor
The drain electrode of M11 is connected with the load stage circuit.
Advantageous effect using above-mentioned further scheme is：Local oscillation signal is accessed, using transistor in the big signal of local oscillator
Control lower whorl conductance leads to, and modulation is switched over to electric current, to realize the conversion of frequency.
Further, the load stage circuit includes resistance R3, resistance R4, capacitance C3 and capacitance C4；The one of the resistance R3
End is connected with the drain electrode of the transistor M8, and the other end of the resistance R3 is connected with supply voltage VDD；The one of the capacitance C3
End is connected with the drain electrode of the transistor M8, and the other end of the capacitance C3 is connected with supply voltage VDD；The one of the resistance R4
End is connected with the drain electrode of the transistor M11, and the other end of the resistance R4 is connected with supply voltage VDD；The capacitance C4's
One end is connected with the drain electrode of the transistor M11, and the other end of the capacitance C4 is connected with supply voltage VDD.
Advantageous effect using above-mentioned further scheme is：The load of RC low-pass filters can provide certain voltage and increase
Benefit, moreover it is possible to filter out DM EMI signal and local oscillator leakage to the signal of medium frequency output end.
Further, current injection circuit is further included, the current injection circuit includes transistor M12 and transistor M13, institute
The grid connection for stating transistor M12 is connected with DC offset voltage V0, and source electrode and the supply voltage VDD of the transistor M12 connect
It connects, the drain electrode of the transistor M12 is connected with the source electrode of the transistor M9；The grid of the transistor M13 and the crystal
The grid connection of pipe M12, the drain electrode of the transistor M13 are connected with the source electrode of the transistor M10, the transistor M13's
Source level is connected with supply voltage VDD.
Advantageous effect using above-mentioned further scheme is：It both can transconductance stage electricity by increasing current injection circuit
Stream increase, moreover it is possible to reduce the electric current for flowing through switching stage, so that the direct current pressure drop of load resistance reduces, so as to increase output voltage swing
The linearity of frequency mixer is improved, further, flicker noise and thermal noise caused by the direct mechanism of switching stage can also be reduced.
Further, the transistor M1~M11 is NMOS tube, and the transistor M12 and transistor M13 are PMOS
Pipe.
Description of the drawings
Fig. 1 is a kind of circuit diagram of the frequency mixer based on mutual conductance coefficient correcting principle of the utility model；
Fig. 2 is that conversion gain becomes with local oscillation power in a kind of frequency mixer based on mutual conductance coefficient correcting principle of the utility model
The analogous diagram of change；
Fig. 3 is that conversion gain becomes with output frequency in a kind of frequency mixer based on mutual conductance coefficient correcting principle of the utility model
The analogous diagram of change；
Fig. 4 is a kind of noise coefficient simulation result figure of the frequency mixer based on mutual conductance coefficient correcting principle of the utility model；
Fig. 5 is a kind of linearity simulation result figure of the frequency mixer based on mutual conductance coefficient correcting principle of the utility model；
Fig. 6 is a kind of power consumption sectional drawing of the frequency mixer based on mutual conductance coefficient correcting principle of the utility model.
Specific embodiment
The principle and feature of the utility model are described below in conjunction with attached drawing, example is served only for explaining this practicality
It is new, it is not intended to limit the scope of the utility model.
As shown in Figure 1, a kind of frequency mixer based on mutual conductance coefficient correcting principle, including the transconductance stage electricity being sequentially connected electrically
Road, switching stage circuit and load stage circuit, wherein, the transconductance stage circuit uses mutual conductance coefficient correcting principle and source degeneracy inductance
Structure；
The transconductance stage circuit is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into radio-frequency current
Signal, and Reusability is carried out to current radio frequency signal；
The switching stage circuit is used to access local oscillation signal and current radio frequency signal, and controls institute according to local oscillation signal
State switching stage circuit setting multiple switch pipe turn in turn, and using multiple switch pipe turn in turn to current radio frequency signal into
Row switch modulation, generation current intermediate frequency signal are transmitted to load stage circuit；
The load stage circuit, is used to current intermediate frequency signal being converted into voltage signal exporting.
Specifically：The transconductance stage circuit includes transistor M1, transistor M2, transistor M3, transistor M4, transistor
M5, transistor M6, transistor M7, inductance L1, capacitance C1, capacitance C2, resistance R1, resistance R2, resistance Rb1 and resistance Rb2；It is described
The positive terminal RF+ connections of the grid and radio frequency voltage signal of transistor M1, the drain electrode of the transistor M1 is with the inductance L1's
One end connects, and the source level ground connection of the transistor M1, the other end of the inductance L1 is connected with the drain electrode of the transistor M2；Institute
The grid for stating transistor M3 is connected with the grid of the transistor M4, the drain electrode of the transistor M3 and the leakage of the transistor M1
Pole connects, and the drain electrode of the transistor M3 is also connected with the switching stage circuit, the source level ground connection of the transistor M3；The crystalline substance
The negative pole end RF- connections of the grid and radio frequency voltage signal of body pipe M2, the source level ground connection of the transistor M2；The transistor M4
Drain electrode be connected with the drain electrode of the transistor M2, the drain electrode of the transistor M4 is also connected with the switching stage circuit, described
The source level ground connection of transistor M4；The resistance Rb2 one end connection DC offset voltage v2, the other end of the resistance Rb2 with
The grid connection of the transistor M3；The positive terminal RF+ connections of the grid and radio frequency voltage signal of the transistor M5, the crystalline substance
The drain electrode of body pipe M5 is connected with one end of the capacitance C1, the source level ground connection of the transistor M5, the other end of the capacitance C1
It is connected with the grid of the transistor M7；The negative pole end RF- connections of the grid and radio frequency voltage signal of the transistor M6, it is described
The source level ground connection of transistor M6, the drain electrode of the transistor M6 are connected with the drain electrode of the transistor M5；The one of the resistance Rb1
End is connected with the grid of the transistor M7, the other end connection DC offset voltage V1 of the resistance Rb1；The transistor M7
Source level ground connection, the drain electrode of the transistor M7 is connected with one end of the resistance R2, and the other end of the R2 connects voltage
VDD；One end of the resistance R1 is connected with the drain electrode of the transistor M5, the other end connection voltage VDD of the resistance R1；Institute
The one end for stating capacitance C2 is connected with the drain electrode of the transistor M7, the grid of the other end of the capacitance C2 and the transistor M4
Connection.
The realization of the schemes such as pseudo-differential, fully differential and source-electrode degradation may be employed in transconductance stage.Pseudo-differential is very suitable for realizing
The transduction stage can improve three ranks input cut off (IIP3), but since it generates common mode second-order distortion, reduce second order input
Cut off (IIP2).In addition, the tail current source of the source terminal of whole differential input transistors generates high impedance, this to inhibit
Second nonlinear electric current, and load and switching transistor in exist and mismatch, cause the even-order intermodulation in signal path,
Add third order intermodulation electric current IM3.In order to improve third order input intercept point (IIP3), third order distortion is eliminated, the mechanism of elimination is set
In the transconductance stage of frequency mixer, mutual conductance coefficient correction technique structure is used.By increasing additional circuit to transconductance stage, generate non-thread
Property item, by changing its amplitude and phase, improves the linearity of frequency mixer.In Fig. 1, transistor M5 and transistor M6 are non-thread
Property transistor, input voltage signal is converted into non-linear current by them.Since transistor M5 is connected with the drain electrode of M6, so electric
The Difference Terms of stream are removed, and electric current is exported by resistance R1 and R2, amplify output current by transistor M3.The small letter of transistor M1
Number model using the drain current that Taylor series expansion represents as：
id1=gm1vgs+g'm1v2 gs+g”m1v3 gs+... (1)
Wherein, Vgs=Vg-VS, Vg are grid voltages, and VS is source voltage, gm1、g'm1、g”m1Transistor M1 is represented respectively
The first rank, second-order and the 3rd rank mutual conductance coefficient.
It can be found that changing metal-oxide-semiconductor drain current from above formula, then it can change mutual conductance coefficient.
The grid voltage V of transistor M3GIt can be expressed as：
Wherein, D2It is VGSecond-order mutual conductance coefficient.
KCL, using the relational expression of transistor and the frequency domain representation of loop equation, VG's are write by the drain electrode in M5 and M6
Second order mutual conductance coefficient is expressed as：
Wherein, by changing C1、R1And R2Value, thus it is possible to vary D2Phase and amplitude.
The drain current (I1+) of transistor M1 can be defined as：
I1+=H1(w)VRF++H2(w1,w2)V2 RF++H3(w1,w2,w3)V3 RF++... (7)
Wherein H1, H2 and H3 are I respectively1+ the first rank, second-order and the 3rd rank mutual conductance coefficient, be also designated as first
Rank, second-order and the 3rd rank mutual conductance core.
In above formula, H1, H2 and H3 can be expressed as：
H1(w)=gm1 (8)
Above formula shows transconductance stage H1(w) single order mutual conductance is equal to transistor characteristic gm1Main span lead, eliminate H3(w1,w2,
The linearity can be improved when w3).
The formula of third order intermodulation point is：
It is derived according to above formula it can be found that change the phase and amplitude of D2 by adjusting C1, R1 and R2, then transistor M3
Grid voltage changes, and drain current changes correspondingly at this time, then can correct mutual conductance coefficient.According to formula (11), work as mutual conductance
During index variation, then it can be used for improving inputting third order intermodulation point IIP3, i.e., it is mutual with three ranks of transconductance stage by introducing one
It adjusts that electric current is identical but the interaction item of opposite in phase improves the IIP3 values of CMOS active mixers, change its amplitude and phase value takes
The tuning of resistor certainly in the circuit added.By the increasing of the number of transistors at the RF ports of the frequency mixer proposed
Add, the noise of frequency mixer is increased slightly.In radio-frequency transmitter, the conversion gain of previous stage frequency mixer is higher, to rear stage electricity
The noise perfomiance requirements on road can reduce.The gain expressions of frequency mixer are：
Transconductance stage additionally uses source degeneracy induction structure, exports radio-frequency current, has preferable input matching properties, improves
The conversion gain and the linearity of circuit.Inductance is connected by the drain electrode of transistor M1, transistor M2, on-off circuit can be reduced
The indirect mechanism flicker noise that source level parasitic capacitance is brought further suppresses radiofrequency signal and is coupled to ground access by parasitic capacitance,
Improve the conversion gain of frequency mixer.Capacitance C2 provides preferable input matching properties, also improves the linearity of circuit.
Specifically：The switching stage circuit includes transistor M8, transistor M9, transistor M10 and transistor M11, described
The positive terminal LO+ connections of the grid and local oscillation signal of transistor M8, the leakage of the source level of the transistor M8 and the transistor M1
Pole connects, and the drain electrode of the transistor M8 is connected with the load stage circuit；The grid of the transistor M9 and local oscillation signal
Negative pole end LO- connections, the source level of the transistor M9 are connected with the source electrode of the transistor M8, the drain electrode of the transistor M9 with
The drain electrode connection of the transistor M11；The negative pole end LO- connections of the grid and local oscillation signal of the transistor M10, the crystal
The source level of pipe M10 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M10 connects with the drain electrode of the transistor M8
It connects；The negative pole end LO+ connections of the grid and local oscillation signal of the transistor M11, source level and the crystal of the transistor M11
The drain electrode connection of pipe M2, the drain electrode of the transistor M11 are connected with the load stage circuit.
The switching stage accesses local oscillation signal, is led to using control lower whorl conductance of the transistor in the big signal of local oscillator, when LO+ is led
When logical, transistor M8 and transistor M11 conductings, transistor M9 and transistor M11 end；When LO- is turned on, transistor M9 and crystalline substance
Body pipe M10 is turned on, and transistor M8 and transistor M11 cut-offs switch over electric current modulation with this, realize the conversion of frequency.
Specifically：The load stage circuit includes resistance R3, resistance R4, capacitance C3 and capacitance C4；The one of the resistance R3
End is connected with the drain electrode of the transistor M8, and the other end of the resistance R3 is connected with supply voltage VDD；The one of the capacitance C3
End is connected with the drain electrode of the transistor M8, and the other end of the capacitance C3 is connected with supply voltage VDD；The one of the resistance R4
End is connected with the drain electrode of the transistor M11, and the other end of the resistance R4 is connected with supply voltage VDD；The capacitance C4's
One end is connected with the drain electrode of the transistor M11, and the other end of the capacitance C4 is connected with supply voltage VDD.
When inputting difference mode signal, load branch both sides set capacitance, with the load for being used for providing needed for conversion gain, RC
Low-pass filter load can provide certain voltage gain, also act as the effect of filtering.
Specifically：The utility model further includes current injection circuit, and the current injection circuit includes transistor M12 and crystalline substance
The grid connection of body pipe M13, the transistor M12 are connected with DC offset voltage V0, the source electrode and power supply of the transistor M12
Voltage VDD connections, the drain electrode of the transistor M12 are connected with the source electrode of the transistor M9；The grid of the transistor M13 with
The grid connection of the transistor M12, the drain electrode of the transistor M13 are connected with the source electrode of the transistor M10, the crystal
The source level of pipe M13 is connected with supply voltage VDD.
Current injection circuit employs current injection, using transistor M12 and transistor M13 as shunting source,
Gate bias voltage is controlled by v0 voltages, can be adjusted Injection Current and be accounted for transconductance stage current ratio, reach a relatively good property
It can parameter.Electric current injection reduces the electric current for flowing through switching tube, and noise caused by so as to reduce the direct mechanism of switching stage makes noise
Performance makes moderate progress.We make it that resonance occur with parasitic capacitance by setting rational inductance L1 values；When resonant frequency resonance
In ωRFWhen, the conversion gain of frequency mixer is improved；When resonant frequency point selection is in 2 ωRFWhen, parasitic capacitance impedance reduces
To original 1/3, second harmonic caused by making parasitic capacitance is non-linear to be reduced to minimum；It can be seen that and work as from above analysis
For resonance point in different frequencies, the linearity or gain performance can reach good optimization in specific frequency；In this example, lead to
It crosses and selects suitable inductance L1 so that total parasitic capacitance resonant frequency together at source node is secondary between radio frequency fundamental wave and radio frequency
Between harmonic wave, the conversion gain, noise, linearity performance parameter of this programme can be improved.
The analogous diagram that the conversion gain of the frequency mixer of the utility model changes with local oscillation power is illustrated in figure 2, from Fig. 2
As can be seen that the conversion gain of the frequency mixer can reach more than 28.4dB.
The analogous diagram that the conversion gain of the frequency mixer of the utility model changes with output frequency is illustrated in figure 3, from Fig. 3
As can be seen that the conversion gain of the frequency mixer is 28.4dB.
The analogous diagram of the noise coefficient of the frequency mixer of the utility model is illustrated in figure 4, figure 4, it is seen that this is mixed
The noise coefficient of frequency device is 8dB.
The analogous diagram of the linearity of the frequency mixer of the utility model is illustrated in figure 5, from figure 5 it can be seen that the mixing
The linearity of device is 10.34dBm.
The power consumption diagram of the frequency mixer of the utility model is illustrated in figure 6, from fig. 6 it can be seen that the power consumption of the frequency mixer
For 6.86mW.
In conclusion transconductance stage circuit of the utility model based on the modified frequency mixer of mutual conductance coefficient is repaiied using mutual conductance coefficient
Positive structure by increasing additional circuit to transconductance stage, generates nonlinear terms, by changing its amplitude and phase, improves mixed
The linearity of frequency device.Transconductance stage circuit also uses source degeneracy induction structure so that the conversion gain of frequency mixer is improved.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all in this practicality
Within new spirit and principle, any modifications, equivalent replacements and improvements are made should be included in the guarantor of the utility model
Within the scope of shield.
Claims (5)
1. a kind of frequency mixer based on mutual conductance coefficient correcting principle, it is characterised in that：Including be sequentially connected electrically transconductance stage circuit,
Switching stage circuit and load stage circuit, wherein, the transconductance stage circuit uses mutual conductance coefficient correcting principle and source degeneracy inductance knot
Structure；
The transconductance stage circuit is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into current radio frequency signal,
And Reusability is carried out to current radio frequency signal；
The switching stage circuit is used to access local oscillation signal and current radio frequency signal, and is opened according to controlling local oscillation signal
It closes the multiple switch pipe that grade circuit is set to turn in turn, and is turned in turn using multiple switch pipe and current radio frequency signal is cut
Modulation is changed, generation current intermediate frequency signal is transmitted to load stage circuit；
The load stage circuit, is used to current intermediate frequency signal being converted into voltage signal exporting；
The transconductance stage circuit includes transistor M1~M7, inductance L1, capacitance C1, capacitance C2, resistance R1, resistance R2, resistance Rb1
With resistance Rb2；The positive terminal RF+ connections of the grid and radio frequency voltage signal of the transistor M1, the drain electrode of the transistor M1
It is connected with one end of the inductance L1, the source level ground connection of the transistor M1, the other end and the transistor of the inductance L1
The drain electrode connection of M2；The grid of the transistor M3 is connected with the grid of the transistor M4, the drain electrode of the transistor M3 with
The drain electrode connection of the transistor M1, the drain electrode of the transistor M3 are also connected with the switching stage circuit, the transistor M3
Source level ground connection；The negative pole end RF- connections of the grid and radio frequency voltage signal of the transistor M2, the source level of the transistor M2
Ground connection；The drain electrode of the transistor M4 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M4 is also opened with described
Close the connection of grade circuit, the source level ground connection of the transistor M4；One end connection DC offset voltage v2 of the resistance Rb2, it is described
The other end of resistance Rb2 is connected with the grid of the transistor M3；The grid and radio frequency voltage signal of the transistor M5 is just
Extreme RF+ connections, the drain electrode of the transistor M5 are connected with one end of the capacitance C1, the source level ground connection of the transistor M5,
The other end of the capacitance C1 is connected with the grid of the transistor M7；The grid of the transistor M6 and radio frequency voltage signal
Negative pole end RF- connections, the source level ground connection of the transistor M6, the drain electrode of the transistor M6 connect with the drain electrode of the transistor M5
It connects；One end of the resistance Rb1 is connected with the grid of the transistor M7, the other end connection direct current biasing of the resistance Rb1
Voltage V1；The source level ground connection of the transistor M7, the drain electrode of the transistor M7 are connected with one end of the resistance R2, the R2
Other end connection voltage VDD；One end of the resistance R1 is connected with the drain electrode of the transistor M5, and the resistance R1's is another
End connection voltage VDD；One end of the capacitance C2 is connected with the drain electrode of the transistor M7, the other end of the capacitance C2 and institute
State the grid connection of transistor M4.
2. a kind of frequency mixer based on mutual conductance coefficient correcting principle according to claim 1, it is characterised in that：The switch
Grade circuit includes the positive terminal LO+ connections of the grid and local oscillation signal of transistor M8~M11, the transistor M8, the crystal
The source level of pipe M8 is connected with the drain electrode of the transistor M1, and the drain electrode of the transistor M8 is connected with the load stage circuit；Institute
The negative pole end LO- connections of the grid and local oscillation signal of transistor M9 are stated, the source level of the transistor M9 is with the transistor M8's
Source electrode connects, and the drain electrode of the transistor M9 is connected with the drain electrode of the transistor M11；The grid of the transistor M10 and sheet
It shakes the negative pole end LO- connections of signal, the source level of the transistor M10 is connected with the drain electrode of the transistor M2, the transistor
The drain electrode of M10 is connected with the drain electrode of the transistor M8；The grid of the transistor M11 and the negative pole end LO+ of local oscillation signal connect
It connects, the source level of the transistor M11 is connected with the drain electrode of the transistor M2, drain electrode and the load of the transistor M11
Grade circuit connection.
3. a kind of frequency mixer based on mutual conductance coefficient correcting principle according to claim 2, it is characterised in that：The load
Grade circuit includes resistance R3, resistance R4, capacitance C3 and capacitance C4；One end of the resistance R3 and the drain electrode of the transistor M8 connect
It connects, the other end of the resistance R3 is connected with supply voltage VDD；One end of the capacitance C3 and the drain electrode of the transistor M8 connect
It connects, the other end of the capacitance C3 is connected with supply voltage VDD；One end of the resistance R4 and the drain electrode of the transistor M11
Connection, the other end of the resistance R4 are connected with supply voltage VDD；One end of the capacitance C4 and the leakage of the transistor M11
Pole connects, and the other end of the capacitance C4 is connected with supply voltage VDD.
4. a kind of frequency mixer based on mutual conductance coefficient correcting principle according to claim 3, it is characterised in that：Further include electricity
Flow injection circuit, the current injection circuit include the grid connection of transistor M12 and transistor M13, the transistor M12 with
DC offset voltage V0 connections, the source electrode of the transistor M12 are connected with supply voltage VDD, the drain electrode of the transistor M12 with
The source electrode connection of the transistor M9；The grid of the transistor M13 is connected with the grid of the transistor M12, the crystal
The drain electrode of pipe M13 is connected with the source electrode of the transistor M10, and the source level of the transistor M13 is connected with supply voltage VDD.
5. a kind of frequency mixer based on mutual conductance coefficient correcting principle according to claim 4, it is characterised in that：The crystal
Pipe M1~M11 is NMOS tube, and the transistor M12~M13 is PMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721746992.8U CN207460102U (en) | 2017-12-14 | 2017-12-14 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721746992.8U CN207460102U (en) | 2017-12-14 | 2017-12-14 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
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| Publication Number | Publication Date |
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| CN207460102U true CN207460102U (en) | 2018-06-05 |
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| CN201721746992.8U Expired - Fee Related CN207460102U (en) | 2017-12-14 | 2017-12-14 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
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| CN (1) | CN207460102U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039869A (en) * | 2017-12-14 | 2018-05-15 | 广西师范大学 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
| WO2020000616A1 (en) * | 2018-06-29 | 2020-01-02 | 樊璠 | Active mixer |
-
2017
- 2017-12-14 CN CN201721746992.8U patent/CN207460102U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039869A (en) * | 2017-12-14 | 2018-05-15 | 广西师范大学 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
| CN108039869B (en) * | 2017-12-14 | 2023-11-14 | 广西师范大学 | Mixer based on transconductance coefficient correction structure |
| WO2020000616A1 (en) * | 2018-06-29 | 2020-01-02 | 樊璠 | Active mixer |
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Granted publication date: 20180605 Termination date: 20211214 |