CN104883135B - A kind of resistance feedback formula noise eliminates wideband low noise trsanscondutance amplifier - Google Patents
A kind of resistance feedback formula noise eliminates wideband low noise trsanscondutance amplifier Download PDFInfo
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- CN104883135B CN104883135B CN201510221909.4A CN201510221909A CN104883135B CN 104883135 B CN104883135 B CN 104883135B CN 201510221909 A CN201510221909 A CN 201510221909A CN 104883135 B CN104883135 B CN 104883135B
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Abstract
The invention discloses a kind of resistance feedback formula noise to eliminate wideband low noise trsanscondutance amplifier, belongs to integrated circuit fields.The amplifier is Differential Input/export structure, including resistance feedback input stage, current mirror amplifying stage, noise eliminate compole, negative resistance level；Radiofrequency signal VRF+Inputted by input stage, be then divided into the signal flow direction of two-way：On main path, current signal is converted into by input pipe, is then delivered to output node I by the amplification of current mirror and the multiplication of dynatron, signalout+；Noise is eliminated on secondary path, and input signal passes through the conversion of phase inverter, switchs to signal code and is delivered to output node Iout‑, two-pass DINSAR current signal is constant amplitude reverse signal.The present invention can significantly improve the gain of trsanscondutance amplifier in wider frequency band, improve noise, linearity performance.
Description
Technical field
The invention belongs to integrated circuit fields, more particularly to a kind of low-noise trans-conductance amplifier.
Background technology
With extensive use (such as 3-4G mobile communication, WIFI, and the bluetooth of numerous communications protocol in 5 GHz band
Deng), the software and radio technique of compatible multi-protocols becomes ever more important.Accordingly, the research and development to wide band radio-frequency transmit-receive technology become
Obtain increasingly urgent.The equal proportion reduction along with CMOS technology is noticed simultaneously, and the linearity of CMOS transistor is but due to power supply
The degeneration of voltage grading and mobility and deteriorate.
A very long time in past, circuit designers get used to coming using voltage signal variable the spy of analysis and characterization circuit
Property, i.e., a kind of circuit design technique theory based on voltage domain.With RF IC working frequency more and more higher, at a high speed
In the application environment of low-voltage and low-power dissipation, voltage-mode circuit can not tackle the processing of circuit signal well, non-linear etc.
Shortcoming is gradually exposed.And can solve voltage-mode circuit by the current-mode circuit that signal variable characterizes carrier of electric current
Bottleneck in terms of speed, bandwidth, low pressure, low-power consumption.In recent years, current-mode circuit is in analog/mixed signal processing
Potential advantages are just gradually mined, and quickly promote the development of the circuit design technique based on current field work.At present, in radio frequency
The circuit that integrated circuit fields are worked with current-mode is more representational such as electric current mirror low-noise amplifier, electric current commutation
Type frequency mixer etc..
Especially in recent years, using trsanscondutor, electric current reversing passive frequency mixer as component units receiver rf front-end, with good
Noise well, linear characteristic have won the extensive concern and Innovation Input of academia and industrial circle.As shown in figure 1, the trsanscondutor
Positioned at the first order of receives link, its noise is most important, so the noise optimization problem in broadband becomes broadband reception
The primary difficult point of technology.In addition, the acquisition of low noise can not be exchanged with big power consumption, because low-power consumption is always chip design
Basic point of departure.
So far, the designing technique of low-noise amplifier has generally been used for reference in the research and development to low noise trsanscondutor.Typical generation
Table is as shown in Fig. 2 the low noise trsanscondutor amplified based on voltage domain designed for Dezhou peasants and workers university using noise cancellation technique
(H.M.Geddada,et.al.,“Wide-band inductorless low-noise transconductance amp
lifiers with high large-signal linearity,”IEEE trans.microwave theory and
techn.,vol.62,no.7,2014).The research achieves superior noiseproof feature, and good linear characteristic.But should
There is more Voltage-current conversion in circuit structure, constrain its linear properties.It is also noted that the researcher of University of Macao is direct
Using NMOS, PMOS inverter structure of resistance feedback as trsanscondutor, (Zhicheng Lin as shown in Figure 3；Pui-In
Mak；Martins,1.4-mW 59.4-dB-SFDR 2.4-GHz ZigBee/WPAN Receiver Exploiting a
" Split-LNTA+50%LO " Topology in 65-nm CMOS, IEEE trans.microwave theory and
techn.,Volume:62,Issue:7.2014).Notice that this structure has the relation that is closely related of input matching and noise,
So that it is difficult to meet design requirement simultaneously between two performances.
The content of the invention
The technical problems to be solved by the invention are to provide that one kind can obtain low noise figure, High Linear has again
The wideband low noise trsanscondutance amplifier of low-power consumption.
The present invention solves above-mentioned technical problem using following technological means：A kind of as shown in figure 4, resistance feedback formula noise
Wideband low noise trsanscondutance amplifier is eliminated, its structure is as shown in figure 4, integrated circuit is mirror image, including in mirror image pair
The first resistor feedback common source input stage and second resistance feedback common source input stage of title, the first current mirror amplification in specular
Level and the second current mirror amplifying stage, in the first negative resistance level of specular and the second negative resistance level, the first noise in specular
Eliminate compole and the second noise eliminates compole；
The first resistor feedback common source input stage includes nmos pass transistor Mn1、Mn2, current source transistor MbiasAnd feedback
Resistance RF, the first current mirror amplifying stage includes PMOS Mp4、Mp5, first noise, which eliminates compole, includes nmos pass transistor
Mn3With PMOS transistor Mp3, the first negative resistance level includes transistor Mp6；The second resistance feedback common source input stage includes
Nmos pass transistor Mn1'、Mn2', current source transistor Mbias'With feedback resistance RF', the second current mirror amplifying stage includes PMOS crystal
Pipe Mp4'、Mp5', second noise, which eliminates compole, includes nmos pass transistor Mn3'With PMOS transistor Mp3', second negative resistance
Level includes transistor Mp6'；
The common source input transistors Mn1Source ground, its grid is connected to resistance R by node AFNegative terminal, it drains logical
Cross node B and be connected to feedback transistor Mn2Grid；
NMOS tube Mn2Source electrode be connected to resistance RFAnode and current source transistor MbiasDrain electrode, transistor Mbias's
Source ground, NMOS tube Mn2Drain electrode be connected to power supply VDD；
The NMOS tube Mn3Source electrode be connected to the ground, its grid is connected to node A, and its drain electrode is connected to by node C
PMOS Mp3Drain electrode；The PMOS Mp3Grid pass through capacitance CbNode A is connected to, its source electrode is connected to power supply
VDD, power supply VbFor Mp3Bias voltage is provided；
The PMOS Mp4Drain electrode and grid be connected to node B, its source electrode is connected to power supply VDD；The PMOS
Mp5Grid be connected to node B, its drain by node C' is connected to the second noise elimination compole NMOS tube Mn3'Leakage
Pole, its source electrode are connected to power supply VDD；
The transistor Mp6Drain electrode be connected to node B, its grid is connected to the transistor M of the second negative resistance levelp6'Leakage
Pole, its source electrode are connected to power supply VDD；
Second resistance feedback common source input stage, the second current mirror amplifying stage, the second negative resistance level and second noise eliminate
The structure of compole is identical in the annexation of the corresponding construction of mirror image with it, and node A', B', C' are respectively node A, B, C
Specular node；
As shown in figure 5, save the differential signal V of the low-noise trans-conductance amplifier after debiasing and capacitancein+ by node A
Input, then it is divided into the signal flow direction of two-way：On main path, current signal is converted into by first resistor feed back input level, so
Afterwards output node C' is delivered to by multiplication, the signal of the amplification of the first current mirror amplifying stage, the first negative resistance level；It is auxiliary
Help on path, signal Vin- inputted by node A', switching to signal code by the second noise elimination compole is delivered to output node
C'；The signal code of two paths carries out in-phase stacking and produces output signal Iout+.Similarly, differential signal Vin- defeated by node A'
Enter, be then divided into the signal flow direction of two-way：On main path, current signal is converted into by second resistance feed back input level, then
Output node C is delivered to by multiplication, the signal of the amplification of the second current mirror amplifying stage, the second negative resistance level；Auxiliary
On path, signal Vin+ inputted by node A, switching to signal code by the first noise elimination compole is delivered to output node C；
The signal code of two paths carries out in-phase stacking and produces output signal Iout-；Thus, output end common-mode signal I is obtainedout。
A kind of resistance feedback formula noise of the present invention eliminate wideband low noise trsanscondutance amplifier noise eliminate principle can be as
It is to understand：As shown in figure 5, Mn1Channel noise positive thermal noise voltage is produced in node B, the noise voltage passes through main road
On footpath, through current mirror Mp4、Mp5Amplification and dynatron Mp6Multiplication, noise voltage, which is reversed, is delivered to output node C'；
The positive thermal noise voltage of B node passes through feedback transistor M simultaneouslyn2It is delivered on secondary path, and by phase inverter Mn3、Mp3
Conversion, switch to reverse noise current and be delivered to output node C；The two noise voltage signals are that constant amplitude is reverse, by taking
Two paths of differential signals, Mn1Channel noise be eliminated in output port.
As the structure of optimization, a kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier and also included
Common mode feedback circuit CMFB, the input of the common mode feedback circuit are connected to node C, C'.By detecting output node Iout's
Common-mode voltage, and and VDD/ 2 reference voltage VrefCompare, obtained error signal adjusts Mn3Gate bias voltage, make
Obtain IoutStatic bias voltage it is stable in VDDNear/2, with the linear amplitude of oscillation obtained.Moreover, circuit main path is current field
Signal amplification, signal is not likely to produce compression, the M in secondary pathn3For main nonlinear source, based on derivative principle of cancellation,
Use Mp3Carry out partial offset Mn3Nonlinear factor, and then lifted circuit the linearity.
The beneficial effects of the invention are as follows：
The present invention under certain power consumption, can significantly reduce the noise figure of CMOS trsanscondutance amplifiers in broadband range,
And possesses good linearity characteristic；Resistance feedback formula noise proposed by the present invention eliminates making an uproar for wideband low noise trsanscondutance amplifier
Sound eliminates characteristic and causes the circuit to have good noiseproof feature, and the amplification of its current field is allowed to have the good linearity concurrently, is adopted
Negative resistance technology and current multiplexing techniques save circuit power consumption.
Brief description of the drawings
Fig. 1 is the receiver rf front-end schematic diagram being made up of trsanscondutor, electric current reversing passive frequency mixer；
Fig. 2 is the voltage domain low noise trsanscondutor schematic diagram based on noise cancellation technique；
Fig. 3 is the receiving front-end schematic diagram based on resistance feedback phase inverter trsanscondutor；
Fig. 4 is the schematic diagram that a kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier
Fig. 5 is the noise elimination signal that a kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier
Figure；
Fig. 6 is the gain results curve that a kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier；
Fig. 7 is the noise result curve that a kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier；
Fig. 8 is the IIP3 result figures that a kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.
A kind of resistance feedback formula noise of the present invention eliminates wideband low noise trsanscondutance amplifier, its structure as shown in figure 4, including
Resistance feedback common source input stage, current mirror amplifying stage, negative resistance level, noise eliminate compole.
Resistance feedback input stage main function is that input resistant matching is obtained in broadband, the main work(of current mirror amplifying stage
Can be that signal is amplified in current field.Meanwhile negative resistance level effectively doubles the amplification, to reduce the work(of main path
Consumption.In addition, noise eliminates compole, for eliminating the noise of common source input pipe, it is beneficial to the reality of low-power consumption using stacked structure
It is existing.By eliminating the small-signal analysis of wideband low noise trsanscondutance amplifier to resistance feedback formula noise, its transadmittance gain can be with table
It is shown as：
Wherein, gmn1, gmn3, gmp3, gmp4, gmp6Transistor M is represented successivelyn1, Mn3, Mp3, Mp4, Mp6Mutual conductance, parameter N is
Transistor Mp5With Mp4W/L proportionality coefficients.In order to meet the output of the differential signal of balance, there is following condition to need to meet：
By above formula it can be seen that, the introducing of negative resistance level so that the mutual conductance of common source input pipe, proportionality coefficient N can be reduced, this
Low-power consumption for circuit is with positive effect, and related theory deduction also indicates that N is bigger, and circuit power consumption is bigger, although making an uproar
Sound can improve.Input resistant matching condition is：
Wherein, RsAnd RinIt is signal source impedance and the input impedance of circuit respectively；gmn2、RFTransistor M is represented successivelyn2's
Mutual conductance and feedback resistance；Because resistance feedback formula structure itself possesses the characteristics of broadband, transistor Mn2Introducing turn avoid nothing
The voltage gain that source resistive degeneration is brought is degenerated.
The derivation of equation of circuit also indicates that formula (2) is also transistor Mn1Channel noise conditions to release；Further I
It is also recognized that Mn2, Mp4, Mp5Noise can also by the noise eliminate structure be partially removed, finally cause Mn3、Mp3
For the main noise contributor of circuit, by designing big transconductance value, this noise contribution can be reduced to an acceptable
It is horizontal.Principle, M are eliminated similar to noisen1Nonlinear component be also eliminated.Current mirror Mp4、Mp5Itself have again superior
The linearity so that noise eliminates the non-linear main bottleneck for restriction circuit linearity degree of compole.By to transistor Mn3Mp3
The Taylor expansion analysis of signal code is carried out, it is as follows：
in=gn1(υi)+gn2(υi)2+gn3(υi)3 (4)
ip=gp1(-υi)+gp2(-υi)2+gp3(-υi)3 (5)
Wherein, viIt is input signal, gN1~3M is represented successivelyn3Single order, second order, three rank items；gP1~3M is represented successivelyp3One
Rank, second order, three rank items, then output current signal be：
Adjust Mp3Bias, Mn3Second order, third-order non-linear item can partially remove, the linearity is improved.
Embodiment
The LNTA circuits that the present embodiment provides are realized using 0.18 μm of RF CMOS technology, are powered using 1.8V power supplys, ginseng
Number RF2 are taken for 240 Ω, parameter N, the bias current of circuit is 14mA.Fig. 6 gives LNTA gain curves, shows in three dB bandwidth
About 41.2mS transadmittance gain is obtained in (0.1~1.5GHz), Fig. 7 gives noise figure result, 0.1~1.5GHz's
In bandwidth, its noise figure NF is about 2.6dB.Low noise is tested in 1GHz frequencies using interval 5MHz constant amplitude two-tone signal respectively
The linearity of acoustic amplifier, as shown in figure 8, it is -5.5dBm that it, which inputs third order intermodulation (IIP3) simulation result,.Result above table
Bright, the LNTA operating current 14mA, is compared under 1.8V conditions of power supply with existing low-noise amplifier, and the amplifier holds
Easily realize low-voltage and low-power consumption application.
Claims (5)
1. a kind of resistance feedback formula noise eliminates wideband low noise trsanscondutance amplifier, integrated circuit structure is mirror image,
It is characterised in that it includes feed back common source input stage and second resistance feedback common source input stage in the first resistor of specular, be in
The the first current mirror amplifying stage and the second current mirror amplifying stage of specular, in the first negative resistance level of specular and the second negative resistance
Level, compole and the second noise elimination compole are eliminated in the first noise of specular；
Differential signal Vin+ by first resistor feedback common source input stage input, the signal for being then divided into two-way flows to：On main path,
By first resistor feedback common source input stage be converted into current signal, then by the amplification of the first current mirror amplifying stage,
After the multiplication of first negative resistance level, signal is delivered to output node C'；On secondary path, signal Vin- fed back by second resistance
Common source input stage inputs, and switching to signal code by the second noise elimination compole is delivered to output node C'；Two paths
Signal code carries out in-phase stacking and produces output signal Iout+；
Differential signal Vin- by second resistance feedback common source input stage input, the signal for being then divided into two-way flows to：On main path,
By second resistance feedback common source input stage be converted into current signal, then by the amplification of the second current mirror amplifying stage,
After the multiplication of second negative resistance level, signal is delivered to output node C；On secondary path, signal Vin+ fed back altogether by first resistor
Source input stage input, switch to signal code by the first noise elimination compole and be delivered to output node C；The signal of two paths
Electric current carries out in-phase stacking and produces output signal Iout-；Thus, output end common-mode signal I is obtainedout。
2. resistance feedback formula noise according to claim 1 eliminates wideband low noise trsanscondutance amplifier, it is characterised in that institute
Stating first resistor feedback common source input stage includes nmos pass transistor Mn1、Mn2, current source transistor MbiasAnd feedback resistance RF；It is described
Second resistance feedback common source input stage includes nmos pass transistor Mn1'、Mn2', current source transistor Mbias'With feedback resistance RF'；
The nmos pass transistor Mn1Source ground, its grid is connected to resistance R by node AFNegative terminal, its drain electrode pass through node B
It is connected to feedback transistor Mn2Grid；Nmos pass transistor Mn2Source electrode be connected to resistance RFAnode and current source transistor Mbias
Drain electrode, transistor MbiasSource ground, nmos pass transistor Mn2Drain electrode be connected to power supply VDD。
3. resistance feedback formula noise according to claim 2 eliminates wideband low noise trsanscondutance amplifier, it is characterised in that institute
Stating the first noise elimination compole includes nmos pass transistor Mn3With PMOS transistor Mp3；Second noise eliminates compole bag
Include nmos pass transistor Mn3'With PMOS transistor Mp3'；
The nmos pass transistor Mn3Source ground, its grid is connected to node A, and it drains, and to be connected to PMOS by node C brilliant
Body pipe Mp3Drain electrode；The PMOS transistor Mp3Grid pass through capacitance CbNode A is connected to, its source electrode is connected to power supply
VDD, power supply VbFor Mp3Bias voltage is provided.
4. resistance feedback formula noise according to claim 3 eliminates wideband low noise trsanscondutance amplifier, it is characterised in that institute
Stating the first current mirror amplifying stage includes PMOS transistor Mp4、Mp5, the first negative resistance level includes transistor Mp6；Second current mirror
Amplifying stage includes PMOS transistor Mp4'、Mp5', the second negative resistance level includes transistor Mp6'；
The PMOS transistor Mp4Drain electrode and grid be connected to node B, its source electrode is connected to power supply VDD；The PMOS crystal
Pipe Mp5Grid be connected to node B, its drain by node C' is connected to the second noise elimination compole nmos pass transistor Mn3'
Drain electrode, its source electrode is connected to power supply VDD；The transistor Mp6Drain electrode be connected to node B, its grid is connected to the second negative resistance
The transistor M of levelp6'Drain electrode, its source electrode is connected to power supply VDD；
Second resistance feedback common source input stage, the second current mirror amplifying stage, the second negative resistance level and second noise eliminate auxiliary
Each device annexation of level is identical in the annexation of the corresponding construction of mirror image with it；Differential signal Vin+ defeated by node A
Enter, differential signal Vin- inputted by node A'.
5. resistance feedback formula noise according to claim 4 eliminates wideband low noise trsanscondutance amplifier, it is characterised in that also
Including common mode feedback circuit CMFB, the input of the common mode feedback circuit is connected to node C, C'；By detecting output node
Signal IoutCommon-mode voltage, and with reference voltage Vref=VDD/ 2 compare, and obtained error signal is used to adjust NMOS crystal
Pipe Mn3Gate bias voltage so that common-mode signal IoutStatic bias voltage it is stable in VDDNear/2, with the line obtained
The property amplitude of oscillation.
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| CN106100657B (en) * | 2016-05-24 | 2018-04-03 | 东南大学 | It is a kind of that obstruction inhibiting rate receiving radio frequency front end is automatically adjusted based on aliasing filtering |
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| CN112532187B (en) * | 2020-11-26 | 2024-06-18 | 北京百瑞互联技术股份有限公司 | Single-ended input differential output broadband low-noise amplifying circuit |
| CN112491371B (en) * | 2020-11-26 | 2024-03-22 | 北京百瑞互联技术股份有限公司 | High-linearity programmable AB-C class mixed transconductance low-noise transconductance amplifier |
| CN112383280B (en) * | 2020-11-27 | 2023-07-04 | 成都信息工程大学 | Ku-band low-power-consumption CMOS low-noise amplifier circuit |
| CN113328710B (en) * | 2021-06-11 | 2023-09-12 | 上海川土微电子有限公司 | High-linearity transconductance circuit |
| CN113794450B (en) * | 2021-08-10 | 2024-03-29 | 复旦大学 | Broadband high-linearity low-noise amplifier adopting linearity optimization technology |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102176659A (en) * | 2011-03-15 | 2011-09-07 | 清华大学 | Transconductance-enhanced recovery current folded MOS (metal oxide semiconductor) transistor cascade amplifier |
| CN103338015A (en) * | 2013-05-28 | 2013-10-02 | 南京邮电大学 | Amplifier for increasing gain and design method of amplifier |
| CN103457553A (en) * | 2013-08-21 | 2013-12-18 | 中国电子科技集团公司第二十四研究所 | Gain and slew rate enhancement type amplifier |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8970301B2 (en) * | 2013-05-20 | 2015-03-03 | Analog Devices, Inc. | Method for low power low noise input bias current compensation |
-
2015
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102176659A (en) * | 2011-03-15 | 2011-09-07 | 清华大学 | Transconductance-enhanced recovery current folded MOS (metal oxide semiconductor) transistor cascade amplifier |
| CN103338015A (en) * | 2013-05-28 | 2013-10-02 | 南京邮电大学 | Amplifier for increasing gain and design method of amplifier |
| CN103457553A (en) * | 2013-08-21 | 2013-12-18 | 中国电子科技集团公司第二十四研究所 | Gain and slew rate enhancement type amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 低噪声低直流失调零中频WLAN接收前端设计;郭本青等;《微电子学与计算机》;20111230;全文 * |
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