CN207181893U - A kind of backlight module - Google Patents
A kind of backlight module Download PDFInfo
- Publication number
- CN207181893U CN207181893U CN201721045495.5U CN201721045495U CN207181893U CN 207181893 U CN207181893 U CN 207181893U CN 201721045495 U CN201721045495 U CN 201721045495U CN 207181893 U CN207181893 U CN 207181893U
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- backlight module
- zener diode
- light
- led chip
- light bar
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Abstract
The utility model discloses a kind of backlight module, including backboard and the light-emitting diode light bar being located on the inside of backboard, the light-emitting diode light bar includes at least one LED chip, fluorescent film, substrate and Zener diode, the fluorescent film is encapsulated in LED chip, the substrate includes line layer and the supporting layer being located under line layer, the line layer includes several pads and circuit trace, each LED chip is by a pair of pad solders on substrate, the bottom basal surface or lower side surfaces of the supporting layer open up storage tank, the Zener diode face-down bonding is arranged in storage tank, the surface of the pad is provided with insulating materials, heat dispersion can be improved while antistatic effect is ensured.
Description
Technical field
Technical field of liquid crystal display is the utility model is related to, relates more specifically to a kind of backlight module.
Background technology
In technical field of liquid crystal display, backlight module is one of key part and component of panel of LCD, due to liquid crystal
Itself do not light, the function of backlight module is well-off brightness and the light source being evenly distributed, and can normally show
Image.The light source for being presently used for backlight module uses light-emitting diode light bar, and light-emitting diode light bar generally comprises circuit board
With several LED components of welding on circuit boards, each LED component is with SMT(Surface mounting technology)The direct solid welding of mode is in electricity
On the plate of road.The situation of the existing dead lamp failure of light-emitting diode light bar, electrostatic breakdown occupy 90% or so, light-emitting diode light bar
Process by electrostatic breakdown is mainly that electrostatic is passed on LED electrode, causes LED by high electrical breakdown or burns.Work as electrostatic pressure
When relatively low, mainly electrostatic charge conducts to LED negative pole and causes LED damage, and when electrostatic pressure is more than 2000V,
Electrostatic charge, which is transmitted to any electrode, may all cause LED directly to damage.Meanwhile light-emitting diode light bar is coated on backlight module
Interior thermal diffusivity is poor, and it is short to easily cause light-emitting diode light bar service life.
Currently in order to ensure the reliability that light-emitting diode light bar uses, each LED of the meeting in light-emitting diode light bar
One Zener diode of internal parallel, avoid LED from being smashed the dead lamp of large area for causing LED light bar by electrostatic, but use each
The method of LED one Zener diode of increase can greatly increase the cost of manufacture of light-emitting diode light bar again, be unfavorable for control enterprise
The production cost of industry.
Utility model content
In order to solve the deficiencies in the prior art, the utility model provides one kind and is easy to radiate and has an antistatic energy
The backlight module of power.
The utility model technique effect to be reached is realized by following scheme:A kind of backlight module, including backboard and
The light-emitting diode light bar being located on the inside of backboard, the light-emitting diode light bar include at least one LED chip, fluorescent film, base
Plate and Zener diode, the fluorescent film are encapsulated in LED chip, and the substrate includes line layer and the branch being located under line layer
Layer is supportted, the line layer includes several pads and circuit trace, and each LED chip is by a pair of pad solders in substrate
On, the bottom basal surface or lower side surfaces of the supporting layer open up storage tank, and the Zener diode face-down bonding is set
In storage tank, the surface of the pad is provided with insulating materials.
Preferably, the insulating materials uses high reflectance white high-temperature-resistant insulating paint.
Preferably, the breakdown voltage of the Zener diode is 1.2 times to 2 of driving voltage of light-emitting diode light bar
Times.
Preferably, increase drop glue protects the pole of Zener two with fixed in storage tank after the Zener diode welding
Pipe.
Preferably, the fluorescent film uses the silicon or epoxy resin of transparent material, and the material of the addition fluorescence is selected from stone
One of garnet, silicate, nitride, nitrogen oxides, phosphide, sulfide or the compound of several combinations.
Preferably, the line layer is heat-conducting layer, and the supporting layer is heat dissipating layer.
Preferably, the substrate of the line layer uses aluminium material.
Preferably, the supporting layer bottom is provided with least one strip groove or inside opens up at least two irregular points
The air-vent of cloth.
Preferably, the strip groove surface is provided with graphite.
The utility model has advantages below:
1st, by the way that the bottom basal surface or lower side surfaces of the supporting layer are opened up into storage tank, the Zener diode
Face-down bonding is arranged in storage tank, and without welding bonding line, all LED chips are in parallel with a Zener diode, the Zener
Diode can be discharged electrostatic by Zener diode, greatly strengthen the anti-static electrictity release performance of LED chip, simultaneously
The cost of manufacture of Zener diode is saved, and makes the space of the LED chip more by the way that Zener diode is arranged on into supporting layer
Greatly, flatness is good, and brightness greatly improves;
2nd, by being provided with insulating materials on the surface of pad to clad anode pad and the surface of negative terminal pad, Ke Yiti
The anti-static ability of high light-emitting diode light bar.
Brief description of the drawings
Fig. 1 is the product structure schematic diagram of light-emitting diode light bar in the utility model;
Fig. 2 is the electrical block diagram of light-emitting diode light bar in the utility model;
Fig. 3 is the sectional view of backlight module in the utility model.
Embodiment
The utility model is described in detail with reference to the accompanying drawings and examples.
With reference to shown in Fig. 1 and Fig. 3, the utility model discloses a kind of backlight module, including backboard 100, backboard is snapped onto
On center 200 and be located at the light-emitting diode light bar 300 of the inner side of backboard 100, the light-emitting diode light bar 300 is backlight mould
Block provides backlight.A column 110 is upwardly extended in the backboard 100 to support center 200 to prevent backlight module from deforming.
The light-emitting diode light bar 300 includes at least one LED chip 1, fluorescent film 2, substrate 3 and Zener diode 4, the fluorescence
Film 2 is encapsulated in LED chip 1 to be encapsulated in LED chip 1, and the substrate 3 includes line layer 31 and is located under line layer 31
Supporting layer 32, the line layer 31 include several pads 311 and circuit trace, and each LED chip 1 passes through a pair of pads
311 welding are on the substrate 3.
In order to prevent LED chip 1 from being punctured by electrostatic or reverse current, the bottom basal surface of the supporting layer 32 or bottom
Side surface opens up storage tank 321, and the face-down bonding of Zener diode 4 is arranged in storage tank 321, without welding bonding line, institute
It is in parallel with Zener diode 4 to state LED chip 1, the Zener diode 4 can be discharged electrostatic by Zener diode,
The anti-static electrictity release performance of LED chip 1 is greatly strengthen, and makes the LED by the way that Zener diode 4 is arranged on into supporting layer 32
The space of chip 1 is bigger, and flatness is good, and brightness greatly improves.Again due to by all LED chips 1 and a Zener diode 4
Parallel connection, compared with the Zener diode in parallel of each LED chip in the prior art, the quantity of Zener diode is saved, is reduced
The cost of manufacture of light-emitting diode light bar 300.
As a further improvement, the pair of pad 311 is positive terminal pad and negative terminal pad, the positive pole of the LED chip 1
It is welded in positive terminal pad, the negative pole of the LED chip 1 is welded in negative terminal pad.In the positive terminal pad and negative terminal pad
Surface be provided with insulating materials 5 to clad anode pad and the surface of negative terminal pad, light-emitting diode light bar can also be improved
300 anti-static ability.The insulating materials 5 can be high emissivity insulating materials, and such as white solder mask or white high temperature resistant are exhausted
Edge coating, it is preferred to use high reflectance white high-temperature-resistant insulating paint, the resistant to elevated temperatures characteristic of one side are avoiding LED chip 1 just
Influence of the heating of negative electrode to the reliability of light-emitting diode light bar 300, the characteristic of another aspect high reflectance improve LED core
The light utilization efficiency of piece 1.
As a further improvement, as shown in Fig. 2 preferred embodiment for the utility model light-emitting diode light bar 300
Electrical block diagram.Wherein light-emitting diode light bar 300 also includes Zener diode 4, and the Zener diode 4 is used to prevent
The forward direction overvoltage of light-emitting diode light bar 300, the positive pole of the Zener diode 4 are connected with the negative pole of all LED chips 1, together
The negative pole of diode 4 received is connected with the positive pole of all LED chips 1, and all LED chips 1 pass through series connection and/or in parallel form hair
Optical diode lamp bar 300.Preferably, the breakdown voltage of the Zener diode 4 is the driving voltage of light-emitting diode light bar 300
1.2 times to 2 times.
As a further improvement, the Zener diode 4 increase drop glue can be protected after welding in storage tank 321 with fixed
The Zener diode 4.
The silicon of the use of fluorescent film 2 transparent material, epoxy resin etc. described in the present embodiment, the material of the addition fluorescence are optional
From one of garnet, silicate, nitride, nitrogen oxides, phosphide, sulfide or the compound of several combinations.
As a further improvement, the line layer 31 is heat-conducting layer, the supporting layer 32 is heat dissipating layer.By the line layer
31 substrate uses aluminium material, because aluminium has stronger heat conductivility.The bottom of supporting layer 32 is provided with least one
Connected in star 322 or inside open up at least two air-vents 323 being randomly distributed, and can effectively accelerate light-emitting diode light bar
300 radiating.
As a further improvement, the surface of strip groove 322 is provided with graphite.Because the thermal conductivity factor of graphite can be with temperature
The rise of degree and increase, or even heat guard can be turned at very high temperatures, therefore graphite has very high thermal conductivity, Neng Gouzeng
Add the radiating effect of supporting layer.
When light-emitting diode light bar 300 described in the utility model works, when being applied to the both ends of light-emitting diode light bar 300
Voltage it is normal when, light-emitting diode light bar 300 can normal work;When the forward direction for being applied to the both ends of light-emitting diode light bar 300
Voltage is excessive, has exceeded the breakdown voltage of Zener diode 4, and Zener diode 4 will be reversed breakdown conducting, and avoid excessive
Forward voltage, which is applied in the LED chip 1 of light-emitting diode light bar 300, causes 1 dead lamp of LED chip.
Light-emitting diode light bar 300 of the present utility model, except the bottom basal surface or lower side table in supporting layer 32
Face opens up storage tank 321, and the face-down bonding of Zener diode 4 is arranged in storage tank 321, is ensureing light-emitting diode light bar
The brightness of LED chip 1 is improved while 300 antistatic effect, also by being set on the surface of the positive terminal pad and negative terminal pad
There is insulating materials 5 further to improve the antistatic effect of light-emitting diode light bar 300.And the Zener diode 4 is with owning
LED chip 1 it is in parallel, save the quantity of Zener diode 4, reduce the cost of manufacture of light-emitting diode light bar 300.
As shown in figure 3, in the utility model, reflector plate 400 that the backlight module also includes being located in backboard 100, set
Light guide plate 500 on reflector plate 400 and the optical film 600 being located on light guide plate 500, the reflector plate 400 is to by leaded light
The light of the bottom of plate 500 is reflected back in light guide plate 500, and the light guide plate 500 is to the light that sends light-emitting diode light bar 300
Line is converted to planar light, and the optical film 600 is making light more uniformly show.
It is last it should be noted that above example is only illustrating the technical scheme of the embodiment of the present invention rather than it is entered
Row limitation, although the embodiment of the present invention is described in detail with reference to preferred embodiment, one of ordinary skill in the art
It should be understood that can still be modified to the technical scheme of the embodiment of the present invention or equivalent substitution, and these modifications or wait
The scope of amended technical scheme disengaging technical scheme of the embodiment of the present invention can not also be made with replacement.
Claims (8)
1. a kind of backlight module, it is characterised in that described luminous including backboard and the light-emitting diode light bar being located on the inside of backboard
Diode light bar includes at least one LED chip, fluorescent film, substrate and Zener diode, and the fluorescent film is encapsulated in LED chip
On, the substrate includes line layer and the supporting layer being located under line layer, and the line layer includes several pads and circuit is walked
Line, each LED chip by a pair of pad solders on substrate, the bottom basal surface or lower side table of the supporting layer
Face opens up storage tank, and the Zener diode face-down bonding is arranged in storage tank, and the surface of the pad is provided with insulating materials.
2. a kind of backlight module as claimed in claim 1, it is characterised in that the insulating materials is resistance to using high reflectance white
High-temperature insulating paint.
3. a kind of backlight module as claimed in claim 1, it is characterised in that the breakdown voltage of the Zener diode is luminous
1.2 times to 2 times of the driving voltage of diode light bar.
4. a kind of backlight module as claimed in claim 1, it is characterised in that after the Zener diode welding in storage tank
Increase drop glue protects the Zener diode with fixed.
5. a kind of backlight module as claimed in claim 1, it is characterised in that the line layer is heat-conducting layer, the supporting layer
For heat dissipating layer.
6. a kind of backlight module as claimed in claim 5, it is characterised in that the substrate of the line layer uses aluminium material.
7. a kind of backlight module as claimed in claim 5, it is characterised in that the supporting layer bottom is provided with least one bar shaped
Groove or inside open up at least two air-vents being randomly distributed.
8. a kind of backlight module as claimed in claim 7, it is characterised in that the strip groove surface is provided with graphite.
Priority Applications (1)
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CN201721045495.5U CN207181893U (en) | 2017-08-21 | 2017-08-21 | A kind of backlight module |
Applications Claiming Priority (1)
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CN201721045495.5U CN207181893U (en) | 2017-08-21 | 2017-08-21 | A kind of backlight module |
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CN207181893U true CN207181893U (en) | 2018-04-03 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108828841A (en) * | 2018-07-26 | 2018-11-16 | 武汉华星光电技术有限公司 | LED-backlit device and LED display |
CN111341199A (en) * | 2019-08-23 | 2020-06-26 | Tcl集团股份有限公司 | Light source assembly, method for reducing working current of backlight module and display device |
WO2020140703A1 (en) * | 2019-01-02 | 2020-07-09 | 京东方科技集团股份有限公司 | Backlight module, preparation method therefor, and display device |
CN112185306A (en) * | 2019-07-03 | 2021-01-05 | 乐金显示有限公司 | Backlight unit and display device including the same |
-
2017
- 2017-08-21 CN CN201721045495.5U patent/CN207181893U/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108828841A (en) * | 2018-07-26 | 2018-11-16 | 武汉华星光电技术有限公司 | LED-backlit device and LED display |
US11092849B2 (en) | 2018-07-26 | 2021-08-17 | Wuhan China Star Optoelectronics Technlogy Co., Ltd. | LED backlight device and display device |
WO2020140703A1 (en) * | 2019-01-02 | 2020-07-09 | 京东方科技集团股份有限公司 | Backlight module, preparation method therefor, and display device |
US11768403B2 (en) | 2019-01-02 | 2023-09-26 | Boe Technology Group Co., Ltd. | Backlight assembly, manufacturing method thereof, and display device |
CN112185306A (en) * | 2019-07-03 | 2021-01-05 | 乐金显示有限公司 | Backlight unit and display device including the same |
CN112185306B (en) * | 2019-07-03 | 2024-03-15 | 乐金显示有限公司 | Backlight unit and display device including the same |
CN111341199A (en) * | 2019-08-23 | 2020-06-26 | Tcl集团股份有限公司 | Light source assembly, method for reducing working current of backlight module and display device |
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