CN207135071U - High-fidelity high efficiency power amplifier - Google Patents
High-fidelity high efficiency power amplifier Download PDFInfo
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- CN207135071U CN207135071U CN201721086250.7U CN201721086250U CN207135071U CN 207135071 U CN207135071 U CN 207135071U CN 201721086250 U CN201721086250 U CN 201721086250U CN 207135071 U CN207135071 U CN 207135071U
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Abstract
High-fidelity high efficiency power amplifier of the present utility model, including class AB power amplification unit, class D power amplification unit, second source and the first power supply for being powered for class AB power amplification unit and class D power amplification unit, the input of the class AB power amplification unit connects with the input of class D power amplification unit, the class AB power amplification unit is identical with phase with the multiplication factor of class D power amplification unit, the output end of the class D power amplification unit connects with the earth terminal of second source, the class AB power amplification unit includes two final complementary power tubes, the final complementary power tube uses field-effect transistor or bipolar transistor, the positive pole of second source, the drain electrode with two final complementary power tubes or colelctor electrode are connected negative pole respectively.Powered by two final complementary power tubes of the second source to class AB power amplification unit to improve the efficiency of class AB power amplification unit, obtain the efficient power amplifier of high-fidelity.
Description
Technical field
Power amplifier technology field is the utility model is related to, more particularly to a kind of high-fidelity high efficiency power amplifier.
Background technology
In currently a popular rear class power amplification circuit, there are the class AB (AB classes) compared with high-fidelity, also efficient fourth
Class (D classes).In class AB high-fidelity high efficiency power amplifier, recommended using two power tube symmetrical operations, and to this two
Power tube adds groundwork electric current and solves intermodulation distortion, and fidelity is very high.But such circuit efficiency is relatively low, theoretical average effect
Rate is less than 50%, because power tube works in linear mode, when by voltage output, to during load, more pressure drops need work(
Rate pipe is born.And class D high-fidelity high efficiency power amplifier is worked with PWM mode, first analog quantity is showed with pulse mode, then
Pulse signal is filtered with passive device and is reduced into gentle analog quantity, power tube only has on off state, therefore efficiency is very high, reason
100% is close to by upper.It is well known that the distorted signals of such mode is more serious, including distortion, noise, residual carrier
Etc..Generally speaking, in traditional high-fidelity high efficiency power amplifier, contradiction between high-fidelity and high efficiency be present, it is difficult to
Keep realizing high efficiency on the premise of higher fidelity.
Utility model content
To solve the above problems, the utility model proposes a kind of high fidelity and efficient power amplifier.
The technical solution of the utility model is：High-fidelity high efficiency power amplifier, including class AB power amplification unit, fourth
Class power amplification unit, second source and first for being powered for class AB power amplification unit and class D power amplification unit
Power supply, the input of the class AB power amplification unit connect with the input of class D power amplification unit, the class AB
Power amplification unit is identical with phase with the multiplication factor of class D power amplification unit, the output of the class D power amplification unit
End connects with the earth terminal of second source, and the class AB power amplification unit includes two final complementary power tubes, the end
Level complementary power pipe uses field-effect transistor or bipolar transistor, the positive pole of second source, negative pole respectively with two ends
The drain electrode or colelctor electrode connection of level complementary power pipe.
Further, described two final complementary power tubes are brilliant using the first p type field effect transistor and the first N-type field-effect
Body pipe, the positive pole of the second source are connected with the drain electrode of the first n type field effect transistor, the negative pole of the second source and
The drain electrode connection of one p type field effect transistor.
Further, described two final complementary power tubes use the first positive-negative-positive bipolar transistor and the first bipolar npn
Property transistor, the positive pole of the second source are connected with the colelctor electrode of the first bipolar npn transistor, the second source
Negative pole is connected with the colelctor electrode of the first positive-negative-positive bipolar transistor.
Further, it is additionally provided with amplifying circuit before the final complementary power tube of class AB power amplification unit.
Further, the amplifying circuit uses the second amplifying circuit with constant-current source.
Further, the class D power amplification unit includes class D power amplifier chips, first resistor, second resistance, the second N-type
Field-effect transistor, the 3rd n type field effect transistor, inductance and electric capacity；
3rd pin of the class D power amplifier chips is connected with one end of first resistor and one end of second resistance respectively, institute
State input of the other end of first resistor as class D power amplification unit, the other end of the second resistance respectively with class D
13rd pin of power amplifier chips, the source electrode of the second n type field effect transistor, the drain electrode of the 3rd n type field effect transistor and electricity
One end connection of sense, the drain electrode of second n type field effect transistor are connected with the positive pole of the first power supply, the second N-type field
The grid of effect transistor is connected with the 14th pin of class D power amplifier chips, the source electrode of the 3rd n type field effect transistor
It is connected with the negative pole of the first power supply, the grid of the 3rd n type field effect transistor and the 11st pin of class D power amplifier chips
Connection, the other end of the inductance is by capacity earth, and the other end of the inductance is as the defeated of class D power amplification unit
Go out end.
The beneficial effects of the utility model are：High-fidelity high efficiency power amplifier of the present utility model, including class AB work(
Rate amplifying unit, class D power amplification unit, second source and for for class AB power amplification unit and class D power amplification
First power supply of unit power supply, the input of the class AB power amplification unit and the input of class D power amplification unit connect
Connect, the class AB power amplification unit is identical with phase with the multiplication factor of class D power amplification unit, the class D power
The output end of amplifying unit connects with the earth terminal of second source, and the class AB power amplification unit includes two final complementaries
Power tube, the final complementary power tube use field-effect transistor or bipolar transistor, positive pole, the negative pole point of second source
Drain electrode or colelctor electrode not with two final complementary power tubes are connected.Class AB power amplification unit has traditional class AB work(
The high fidelity of rate amplifying circuit, by the way that second source to be used for two final complementary power for class AB power amplification unit
Pipe is powered, because the voltage of second source is much smaller than the voltage of the first power supply, therefore the electric current in final complementary power tube is constant
In the case of greatly reduce complementary power pipe energy loss, so as to improve the efficiency of power amplifier.Therefore, the high-fidelity high efficiency
Power amplifier has high fidelity and high efficiency.
Brief description of the drawings
Fig. 1 is the circuit diagram of the first specific embodiment of the utility model high-fidelity high efficiency power amplifier；
Fig. 2 is class AB power amplification unit and class D power amplification unit in the specific embodiment of the utility model first
Output signal diagram；
Fig. 3 is the output signal and second source of class AB power amplification unit in the specific embodiment of the utility model first
Voltage pattern.
Embodiment
High-fidelity high efficiency power amplifier, including class AB power amplification unit, class D power amplification unit, second source
With the first power supply for being powered for class AB power amplification unit and class D power amplification unit, the class AB power amplification
The input of unit is connected with the input of class D power amplification unit, and the class AB power amplification unit and class D power are put
The multiplication factor of big unit is identical with phase, and the output end of the class D power amplification unit and the earth terminal of second source connect
Connect, the class AB power amplification unit includes two final complementary power tubes, and the final complementary power tube uses field-effect
Transistor or bipolar transistor, the positive pole of second source, the negative pole drain electrode with two final complementary power tubes or collection respectively
Electrode connects.
Preferred embodiment is further used as, described two final complementary power tubes use the first p-type field effect transistor
Pipe and the first n type field effect transistor, the positive pole of the second source are connected with the drain electrode of the first n type field effect transistor, institute
The negative pole for stating second source is connected with the drain electrode of the first p type field effect transistor.
Preferred embodiment is further used as, described two final complementary power tubes are brilliant using the first positive-negative-positive bipolarity
The colelctor electrode of body pipe and the first bipolar npn transistor, the positive pole of the second source and the first bipolar npn transistor
Connection, the negative pole of the second source are connected with the colelctor electrode of the first positive-negative-positive bipolar transistor.
Preferred embodiment is further used as, is also set before the final complementary power tube of class AB power amplification unit
There is amplifying circuit.
Preferred embodiment is further used as, the amplifying circuit uses the second amplifying circuit with constant-current source.
Preferred embodiment is further used as, the class D power amplification unit includes class D power amplifier chips, the first electricity
Resistance, second resistance, the second n type field effect transistor, the 3rd n type field effect transistor, inductance and electric capacity；
3rd pin of the class D power amplifier chips is connected with one end of first resistor and one end of second resistance respectively, institute
State input of the other end of first resistor as class D power amplification unit, the other end of the second resistance respectively with class D
13rd pin of power amplifier chips, the source electrode of the second n type field effect transistor, the drain electrode of the 3rd n type field effect transistor and electricity
One end connection of sense, the drain electrode of second n type field effect transistor are connected with the positive pole of the first power supply, the second N-type field
The grid of effect transistor is connected with the 14th pin of class D power amplifier chips, the source electrode of the 3rd n type field effect transistor
It is connected with the negative pole of the first power supply, the grid of the 3rd n type field effect transistor and the 11st pin of class D power amplifier chips
Connection, the other end of the inductance is by capacity earth, and the other end of the inductance is as the defeated of class D power amplification unit
Go out end.
First specific embodiment of the present utility model
As shown in figure 1, high-fidelity high efficiency power amplifier, including class AB power amplification unit, class D power amplification list
Member, second source and the first power supply for being powered for class AB power amplification unit and class D power amplification unit, the first
The input of class B power amplifying unit connects with the input of class D power amplification unit, the class AB power amplification unit
It is identical with phase with the multiplication factor of class D power amplification unit, the output end and second source of the class D power amplification unit
Earth terminal connection, the class AB power amplification unit includes two final complementary power tubes, the final complementary power tube
Using field-effect transistor, the drain electrode of the positive pole, negative pole of second source respectively with two final complementary power tubes is connected；
Class D power amplifier chips U1 of the class D power amplification unit including model IRS2092, first resistor R1, second
Resistance R2, the second n type field effect transistor Q1, the 3rd n type field effect transistor Q2, inductance L1 and electric capacity C1；
The IN- pins of the class D power amplifier chips U1 connect with first resistor R1 one end and second resistance R2 one end respectively
Connect, the input of the other end of the first resistor R1 as class D power amplification unit, the other end of the second resistance R2
VS pins with class D power amplifier chips U1, the second n type field effect transistor Q1 source electrode, the 3rd n type field effect transistor respectively
Q2 drain electrode connects with inductance L1 one end, the drain electrode of the second n type field effect transistor Q1 and the positive pole B1+ of the first power supply
Connection, the grid of the second n type field effect transistor Q1 are connected with class D power amplifier chips U1 HO pins, the 3rd N-type
Field-effect transistor Q2 source electrode is connected with the negative pole B2- of the first power supply, the grid of the 3rd n type field effect transistor Q2 with
Class D power amplifier chips U1 LO pins connection, the other end of the inductance L1 is grounded by electric capacity C1, and the inductance L1's is another
Output end of the one end as class D power amplification unit；
The class AB power amplification unit includes the second bipolar npn transistor T1, the 3rd bipolar npn crystal
Pipe T2, the 4th bipolar npn transistor T3, the second positive-negative-positive bipolar transistor T4, the 5th bipolar npn transistor T5,
4th n type field effect transistor Q5, the first n type field effect transistor Q3, the first p type field effect transistor Q4, voltage-regulator diode
D1,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance
R9, the tenth resistance R10, the 11st resistance R11, the 12nd resistance R12 and the 13rd resistance R13；
Wherein, the first n type field effect transistor Q3 and the first p type field effect transistor Q4 are as final complementary power tube；
The input of the class AB power amplification unit passes sequentially through 3rd resistor R3 and the 4th resistance R4 and class AB
The output end connection of power amplification unit, connecting node and the second bipolar npn of the 3rd resistor R3 and the 4th resistance R4
Property transistor T1 base stage connection, the emitter stage and the 3rd bipolar npn crystal of the second bipolar npn transistor T1
Colelctor electrode of the pipe T2 emitter stage with the 4th bipolar npn transistor T3 is connected, the 3rd bipolar npn transistor
T2 base stage is grounded by the 6th resistance R6, and the colelctor electrode and the first power supply of the second bipolar npn transistor T1 are just
Pole B1+ connections, the colelctor electrode of the 3rd bipolar npn transistor T2 pass through the 5th resistance R5 and the positive pole B1 of the first power supply
+ connection, the emitter stage of the 4th bipolar npn transistor T3 are connected by the negative pole B2- of the 7th resistance R7 and the first power supply
Connect, the colelctor electrode of the 3rd bipolar npn transistor T2 is connected with the second positive-negative-positive bipolar transistor T4 base stage, institute
The emitter stage for stating the second positive-negative-positive bipolar transistor T4 is connected with the positive pole B1+ of the first power supply, the second positive-negative-positive bipolarity
Transistor T4 colelctor electrode respectively with the 4th n type field effect transistor Q5 drain electrode and the first n type field effect transistor Q3 grid
Pole connects, the source electrode of the 4th n type field effect transistor Q5 respectively with the 5th bipolar npn transistor T5 colelctor electrode and
First p type field effect transistor Q4 grid connection, the emitter stage of the 5th bipolar npn transistor T5 pass through the 8th electricity
Resistance R8 is connected with the negative pole B2- of the first power supply, and the 5th bipolar npn transistor T5 base stage is connect by the 13rd resistance R13
Ground, the 5th bipolar npn transistor T5 the base stage base stage with the 4th bipolar npn transistor T3 and the pole of voltage stabilizing two respectively
Pipe D1 negative pole connection, the positive pole of the voltage-regulator diode D1 are connected with the negative pole B2- of the first power supply, the first N-type field effect
Transistor Q3 grid is answered to pass sequentially through the 9th resistance R9 and the tenth resistance R10 and the first p type field effect transistor Q4 grid
Connection, the connecting node of the 9th resistance R9 and the tenth resistance R10 are connected with the 4th n type field effect transistor Q5 grid,
The drain electrode of the first n type field effect transistor Q3 and the positive pole B3+ connections of second source, the first N-type field effect transistor
Pipe Q3 source electrode passes sequentially through the 11st resistance R11 and the 12nd resistance R12 and the first p type field effect transistor Q4 source electrode connect
Connect, the drain electrode of the first p type field effect transistor Q4 and the negative pole B4- connections of second source；
The connecting node of the 11st resistance R11 and the 12nd resistance R12 is as high-fidelity high efficiency power amplifier
Output end.
The operation principle of above-mentioned high-fidelity high efficiency power amplifier is：Class AB power amplification unit and class D power amplification
The multiplication factor of unit is as phase, and the multiplication factor of class AB power amplification unit is R4/R3, class D power amplification unit
Multiplication factor be R2/R1, by controlling R4/R3=R2/R1 to make both multiplication factors the same.Class AB power amplification unit
Connected with the input of class D power amplification unit, i.e. the input letter of class AB power amplification unit and class D power amplification unit
As number, because both multiplication factors are the same, the signal of both output is same, as shown in Fig. 2 A-OUT is first
The output signal of class B power amplifying unit, D-OUT are class D power amplification unit output signal, and class D power amplification unit is defeated
The distortion for going out signal is bigger.The earth terminal of the output end of class D power amplification unit and second source connects, so as to it is embedding live the
The ground connection terminal voltage of two power supplys, then powered with final complementary power tube of the second source to class AB power amplification unit, such as Fig. 3
Shown, A-OUT is the output signal of class AB power amplification unit, and VQ3 is the electricity of the first n type field effect transistor Q3 drain electrode
Pressure, VQ4 are the voltage of the first p type field effect transistor Q4 drain electrode.Because second source is much smaller than the first power supply, while and can
Final complementary power tube is set to be operated in normal operating conditions, so on the premise of the electric current of final complementary power tube is constant, pole
The big power for reducing the consumption of final complementary power tube, so as to obtain high efficiency.So the amplifying circuit maintains first and second
The high fidelity of class power amplification circuit, there is high efficiency again.
In class D power amplification unit, it is to complete class D power amplifier that class D power amplifier chips U1 peripheral circuit, which also has more,
Function and essential element, element and parameter that producer discloses and recommended need to be used during practical application, here in order to retouch
State principle to simplify schematic diagram, only remain several elements of key, additionally, it is possible in the presence of other model chips, it
Pin with the different of IRS2092, but can equally complete class D power amplifier function, it is this to substitute the guarantor for still falling within this patent
Protect scope.
Second specific embodiment of the present utility model
Second specific embodiment is adopted relative to the first specific embodiment, class AB power amplification unit final complementary power tube
With the first positive-negative-positive bipolar transistor and the first bipolar npn transistor, the collection of the first bipolar npn transistor
The positive pole B3+ connections of electrode and second source, the colelctor electrode of the first positive-negative-positive bipolar transistor and the negative pole of second source
B4- connections.
Class AB power amplification unit has the high fidelity of traditional class AB power amplification circuit, by by second source
Carry out two final complementary power tubes power supply to class AB power amplification unit, because the voltage of second source is much smaller than the first electricity
The voltage in source, therefore the energy loss of complementary power pipe is greatly reduced in the case where the electric current of final complementary power tube is constant,
So as to improve the efficiency of power amplifier.Therefore, the high-fidelity high efficiency power amplifier has high fidelity and high efficiency.
Above is preferably implement to be illustrated to of the present utility model, but the utility model is not limited to the reality
Example is applied, those skilled in the art can also make a variety of equivalent changes on the premise of without prejudice to the utility model spirit
Shape or replacement, these equivalent deformations or replacement are all contained in the application claim limited range.
Claims (6)
1. high-fidelity high efficiency power amplifier, it is characterised in that including class AB power amplification unit, class D power amplification list
Member, second source and the first power supply for being powered for class AB power amplification unit and class D power amplification unit, the first
The input of class B power amplifying unit connects with the input of class D power amplification unit, the class AB power amplification unit
It is identical with phase with the multiplication factor of class D power amplification unit, the output end and second source of the class D power amplification unit
Earth terminal connection, the class AB power amplification unit includes two final complementary power tubes, the final complementary power tube
Using field-effect transistor or bipolar transistor, the positive pole of second source, negative pole respectively with two final complementary power tubes
Drain electrode or colelctor electrode connection.
2. high-fidelity high efficiency power amplifier according to claim 1, it is characterised in that described two final complementary power
Pipe uses the first p type field effect transistor and the first n type field effect transistor, the positive pole of the second source and the first N-type field
The drain electrode connection of effect transistor, the negative pole of the second source are connected with the drain electrode of the first p type field effect transistor.
3. high-fidelity high efficiency power amplifier according to claim 1, it is characterised in that described two final complementary power
Pipe uses the first positive-negative-positive bipolar transistor and the first bipolar npn transistor, the positive pole of the second source and first
The current collection of the colelctor electrode connection of bipolar npn transistor, the negative pole of the second source and the first positive-negative-positive bipolar transistor
Pole connects.
4. high-fidelity high efficiency power amplifier according to claim 1, it is characterised in that in class AB power amplification unit
Final complementary power tube before be additionally provided with amplifying circuit.
5. high-fidelity high efficiency power amplifier according to claim 4, it is characterised in that the amplifying circuit, which uses, to be had
The second amplifying circuit of constant-current source.
6. high-fidelity high efficiency power amplifier according to claim 1, it is characterised in that the class D power amplification unit
Including class D power amplifier chips, first resistor, second resistance, the second n type field effect transistor, the 3rd n type field effect transistor, electricity
Sense and electric capacity；
3rd pin of the class D power amplifier chips is connected with one end of first resistor and one end of second resistance respectively, and described
Input of the other end of one resistance as class D power amplification unit, the other end of the second resistance respectively with class D power amplifier
13rd pin of chip, the source electrode of the second n type field effect transistor, the drain electrode of the 3rd n type field effect transistor and inductance
One end is connected, and the drain electrode of second n type field effect transistor is connected with the positive pole of the first power supply, the second N-type field-effect
The grid of transistor is connected with the 14th pin of class D power amplifier chips, the source electrode of the 3rd n type field effect transistor and
The negative pole connection of one power supply, the grid of the 3rd n type field effect transistor are connected with the 11st pin of class D power amplifier chips,
The other end of the inductance is by capacity earth, and output end of the other end of the inductance as class D power amplification unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721086250.7U CN207135071U (en) | 2017-08-28 | 2017-08-28 | High-fidelity high efficiency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721086250.7U CN207135071U (en) | 2017-08-28 | 2017-08-28 | High-fidelity high efficiency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207135071U true CN207135071U (en) | 2018-03-23 |
Family
ID=61636680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721086250.7U Active CN207135071U (en) | 2017-08-28 | 2017-08-28 | High-fidelity high efficiency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207135071U (en) |
-
2017
- 2017-08-28 CN CN201721086250.7U patent/CN207135071U/en active Active
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