CN206931990U - Overheat protector mechanism in parallel IGBT - Google Patents
Overheat protector mechanism in parallel IGBT Download PDFInfo
- Publication number
- CN206931990U CN206931990U CN201720451864.4U CN201720451864U CN206931990U CN 206931990 U CN206931990 U CN 206931990U CN 201720451864 U CN201720451864 U CN 201720451864U CN 206931990 U CN206931990 U CN 206931990U
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- Prior art keywords
- temperature
- igbt
- sampler
- collector
- overheat protector
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- Power Conversion In General (AREA)
Abstract
The utility model discloses a kind of IGBT overheat protector mechanisms in parallel; it includes the first temperature sensor, second temperature sensor, the first Temperature sampler, second temperature collector, temperature comparator; the output of first temperature sensor terminates the first Temperature sampler, an input of the output end jointing temp comparator of the first Temperature sampler；The output termination second temperature collector of second temperature sensor, another input of the output end jointing temp comparator of second temperature collector.The utility model can provide more high current density, and uniform heat distribution, flexible topology, cost performance is higher, and temperature rise is consistent, IGBT will not be caused to damage, and IGBT will not frequently trigger overheat protector, extend IGBT service life.
Description
Technical field
A kind of overheat protector mechanism is the utility model is related to, more particularly to a kind of IGBT overheat protector mechanisms in parallel.
Background technology
As market is growing day by day to the demand of high-power converter, IGBT parallel arrangements turn into a kind of trend at present,
Realize that difficult point in parallel is the static equal flow problems with dynamic process of IGBT, if unbalanced phenomena occurs in electric current, can cause simultaneously
The IGBT temperature rises of connection are inconsistent, and the too high IGBT of temperature rise is diagnosed not in time, will ultimately result in IGBT damages.
Currently, mainly there are two kinds for IGBT overheat protector mechanisms in parallel：
First, thermistor collection radiator temperature is placed on IGBT radiator, after temperature reaches overheat protector point,
Stop IGBT work.This mechanism can only measure the IGBT temperature near thermistor indirectly, it is impossible to correct measurement another
IGBT temperature, it can be damaged IGBT caused by overheat protector fails.
2nd, the thermistor temp inside collection two IGBT in parallel, after temperature reaches overheat protector point, stop
IGBT works.It is this that normally IGBT can be protected, but in the case of uneven stream occur in two IGBT of parallel connection, IGBT meetings
Overheat protector is frequently triggered, IGBT is frequently operated in temperature threshold value, can substantially reduce IGBT service life.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of IGBT overheat protector mechanisms in parallel, and it can be carried
For more high current density, uniform heat distribution, flexible topology, cost performance is higher, and temperature rise is consistent, IGBT will not be caused to damage, IGBT
Overheat protector will not be frequently triggered, extends IGBT service life.
The utility model is that solve above-mentioned technical problem by following technical proposals：Excess temperature in parallel a kind of IGBT is protected
Protect mechanism, it is characterised in that it includes the first temperature sensor, second temperature sensor, the first Temperature sampler, second temperature
Collector, temperature comparator, the output of the first temperature sensor terminate the first Temperature sampler, the output of the first Temperature sampler
Terminate an input of temperature comparator；The output termination second temperature collector of second temperature sensor, second temperature are adopted
Another input of the output end jointing temp comparator of storage.
Preferably, the temperature comparator is microprocessor.
Preferably, first Temperature sampler, second temperature collector all use the temperature acquisition of electric resistance partial pressure mode
Device, the first Temperature sampler or second temperature collector include divider resistance, operational amplifier, the first temperature sensor or second
Temperature sensor uses temperature detecting resistance, and divider resistance is connected with temperature detecting resistance, divider resistance, temperature detecting resistance all with operational amplifier
Electrode input end connection.
Positive effect of the present utility model is：The utility model can provide more high current density, uniform heat point
Cloth, flexible topology, cost performance is higher, and temperature rise is consistent, IGBT will not be caused to damage, and IGBT will not frequently trigger overheat protector,
Extend IGBT service life.
Brief description of the drawings
Fig. 1 is the block diagram of the utility model IGBT overheat protector mechanisms in parallel.
Fig. 2 is the implementing circuit figure of Temperature sampler in the utility model.
Embodiment
The utility model preferred embodiment is provided below in conjunction with the accompanying drawings, to describe the technical solution of the utility model in detail.
As shown in figure 1, the utility model IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar
Transistor npn npn) overheat protector mechanism in parallel include the first temperature sensor, second temperature sensor, the first Temperature sampler,
Second temperature collector, temperature comparator, the output of the first temperature sensor terminate the first Temperature sampler, the first temperature acquisition
One input of the output end jointing temp comparator of device；The output termination second temperature collector of second temperature sensor, the
Another input of the output end jointing temp comparator of two Temperature samplers.
First the first IGBT temperature of temperature sensor senses, output is a kind of to be changed and the signal of change with IGBT temperature；One
As take temperature detecting resistance, temperature detecting resistance resistance changes with the change of IGBT temperature；The temperature detecting resistance of IGBT enclosed insides is chosen,
Or increase temperature detecting resistance near IGBT, so reflect the temperature of IGBT shells well.
Second temperature sensor senses the second IGBT temperature, and output is a kind of to be changed and the signal of change with IGBT temperature；One
As take temperature detecting resistance, temperature detecting resistance resistance changes with the change of IGBT temperature；The temperature detecting resistance of IGBT enclosed insides is chosen,
Or increase temperature detecting resistance near IGBT, so reflect the temperature of IGBT shells well.
The output end resistance signal of first temperature sensor is converted to voltage signal by the first Temperature sampler, general to use
Electric resistance partial pressure mode is implemented, or is implemented using other modes.
The output end resistance signal of second temperature sensor is converted to voltage signal by second temperature collector, general to use
Electric resistance partial pressure mode is implemented, or is implemented using other modes.
Temperature comparator is microprocessor (model can be TC1797), and the AD mouths of microprocessor gather two groups of IGBT temperature
Degree, is converted into data signal by voltage signal and is contrasted, differed by more than in first group of IGBT temperature and first group of IGBT temperature
During equal to more than 5 DEG C, IGBT silence signals are provided by microprocessor.Temperature comparator receives the first Temperature sampler and the
The voltage signal of two Temperature samplers, to two kinds of signal subtractions, absolute value as a result then stops IGBT work, knot more than or equal to N
The absolute value of fruit is less than N then IGBT normal works, and N here is natural number.
As shown in Fig. 2 the first Temperature sampler, second temperature collector all use the temperature acquisition of electric resistance partial pressure mode
Device, the first Temperature sampler or second temperature collector include divider resistance R1, operational amplifier IC1, the first temperature sensor
Or second temperature sensor uses temperature detecting resistance R2, divider resistance R1 to be connected with temperature detecting resistance R2, divider resistance R1, temperature detecting resistance
Electrode input ends of the R2 all with operational amplifier IC1 is connected.Temperature sensor R2 changes with IGBT temperature change, so point
Piezoresistance R1 is varied with temperature and changed with the voltage V1 after temperature detecting resistance R2 partial pressures；Voltage V1 is passing through operational amplifier IC1
Input temp comparator afterwards.
In summary, the utility model can provide more high current density, uniform heat distribution, flexible topology, cost performance compared with
Height, temperature rise is consistent, IGBT will not be caused to damage, and IGBT will not frequently trigger overheat protector, extends IGBT service life.
Particular embodiments described above, to the technical problem, technical scheme and beneficial effect of solution of the present utility model
It is further described, should be understood that and the foregoing is only specific embodiment of the utility model, not
It is all within the spirit and principles of the utility model for limiting the utility model, any modification for being made, equivalent substitution, change
Enter, should be included within the scope of protection of the utility model.
Claims (3)
1. overheat protector mechanism in parallel a kind of IGBT, it is characterised in that it includes the first temperature sensor, second temperature sensing
Device, the first Temperature sampler, second temperature collector, temperature comparator, the output of the first temperature sensor terminate the first temperature
Collector, an input of the output end jointing temp comparator of the first Temperature sampler；The output end of second temperature sensor
Connect second temperature collector, another input of the output end jointing temp comparator of second temperature collector.
2. overheat protector mechanism in parallel IGBT as claimed in claim 1, it is characterised in that the temperature comparator is micro- place
Manage device.
3. overheat protector mechanism in parallel IGBT as claimed in claim 1, it is characterised in that first Temperature sampler,
Second temperature collector all uses the Temperature sampler of electric resistance partial pressure mode, the first Temperature sampler or second temperature collector bag
Divider resistance, operational amplifier are included, the first temperature sensor or second temperature sensor use temperature detecting resistance, and divider resistance is with surveying
Warm resistant series, divider resistance, temperature detecting resistance are all connected with the electrode input end of operational amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720451864.4U CN206931990U (en) | 2017-04-26 | 2017-04-26 | Overheat protector mechanism in parallel IGBT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720451864.4U CN206931990U (en) | 2017-04-26 | 2017-04-26 | Overheat protector mechanism in parallel IGBT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206931990U true CN206931990U (en) | 2018-01-26 |
Family
ID=61350964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720451864.4U Expired - Fee Related CN206931990U (en) | 2017-04-26 | 2017-04-26 | Overheat protector mechanism in parallel IGBT |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206931990U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111174932A (en) * | 2020-01-07 | 2020-05-19 | 上海电气集团股份有限公司 | Temperature sampling detection system and method for multiple parallel IGBT modules |
| CN111865186A (en) * | 2019-04-29 | 2020-10-30 | 北京车和家信息技术有限公司 | Fault detection method, motor control method and related equipment |
-
2017
- 2017-04-26 CN CN201720451864.4U patent/CN206931990U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865186A (en) * | 2019-04-29 | 2020-10-30 | 北京车和家信息技术有限公司 | Fault detection method, motor control method and related equipment |
| CN111174932A (en) * | 2020-01-07 | 2020-05-19 | 上海电气集团股份有限公司 | Temperature sampling detection system and method for multiple parallel IGBT modules |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180126 Termination date: 20210426 |
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| CF01 | Termination of patent right due to non-payment of annual fee |