CN206039351U - Excess temperature protection circuit with function is returned to heat stagnation - Google Patents
Excess temperature protection circuit with function is returned to heat stagnation Download PDFInfo
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- CN206039351U CN206039351U CN201620848302.9U CN201620848302U CN206039351U CN 206039351 U CN206039351 U CN 206039351U CN 201620848302 U CN201620848302 U CN 201620848302U CN 206039351 U CN206039351 U CN 206039351U
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Abstract
The utility model discloses an excess temperature protection circuit with function is returned to heat stagnation, produce circuit, temperature measurement circuit and output stage circuit including base voltage. Base voltage produces the circuit, adopts the resistive voltage divider mode to produce fixed voltage, be used for for transistor among the temperature measurement circuit provides base voltage, temperature measurement circuit produces the PTAT electric current relevant with the temperature through the transistor, makes the state of PTAT electric current change according to the temperature variation, and the change of PTAT electric current makes temperature measurement circuit's output voltage's state change to whether the realization exceedes the temperature threshold value according to the temperature, obtains the output of different excess temperature protections, output stage circuit for the driving force of increase excess temperature protection, and it is right to keep apart external circuit temperature measurement circuit's influence. The utility model discloses circuit structure is simple, occupy that chip area is little, the consumption is little, realizes the heat stagnation and return the function to have good application prospect.
Description
Technical field
This utility model is related to Integrated Circuit Temperature resist technology field, and in particular to a kind of mistake for returning function with heat stagnation
Warm protection circuit.
Background technology
Temperature characterisitic plays more and more important role during integrated circuit constantly develops, on the one hand due to integrated
The integrated level of circuit is improved constantly, and is integrated with more power devices；On the other hand, the chip that can be worked in high temperature environments
Design is increasingly by widespread need.Especially in the chip of high power device is integrated with, can be due to the long-time of high power device
Work causes power consumption excessive, causes chip temperature to raise, or even damages chip.In order to protect chip not damaged in high temperature bad border
It is bad, thermal-shutdown circuit can be added in chip, this thermal-shutdown circuit module can work as temperature by the change of detection chip temperature
During more than threshold value, the part of module of its output signal control chip quits work, until chip temperature reduces reaching recovery normally
After the temperature threshold of work, the out-of-work module of chip can be restarted again.
In order to avoid there is thermal oscillation near threshold temperature, need thermal-shutdown circuit that there is heat stagnation to return function.
At present, thermal-shutdown circuit on the market be by the output of thermal-shutdown circuit controlling temperature sensing circuit, from
And the structure of change circuit, affect output valve so that the circuit structure under high temperature, low temperature environment changes, and different is defeated
Go out value and will correspond to different temperature threshold points, to realize that heat stagnation returns function, but, cause the circuit structure realized, more
Complexity, area are larger.
Utility model content
The technical problem solved by this utility model is to overcome the thermal-shutdown circuit in prior art for chip design,
It is complex, the larger problem of area.The thermal-shutdown circuit for returning function with heat stagnation of the present utility model, simple structure, accounts for
With chip area is little, small power consumption, it is provided with heat stagnation and returns function, have a good application prospect.
In order to achieve the above object, the technical scheme adopted by this utility model is：
A kind of thermal-shutdown circuit for returning function with heat stagnation, it is characterised in that：Circuit, temperature are produced including base voltage
Detection circuit and output-stage circuit,
The base voltage produces circuit, produces fixed voltage using electric resistance partial pressure mode, for examining to the temperature
Transistor in slowdown monitoring circuit provides base voltage；
The temperature sensing circuit, produces the PTAT current relevant with temperature by transistor, according to temperature change so that
The state of PTAT current changes, and the change of PTAT current causes the state of the output voltage of temperature sensing circuit that change occurs
Change, so as to realize whether exceeding temperature threshold according to temperature, obtain the output of different overheat protectors；
The output-stage circuit, for increasing the driving force of overheat protector, and isolation external circuit is examined to the temperature
The impact of slowdown monitoring circuit.
A kind of aforesaid thermal-shutdown circuit for returning function with heat stagnation, it is characterised in that：The base voltage produces electricity
Road, including PMOS M9, resistance R3 and resistance R4, the source electrode of PMOS M9 meets DC source VDD, PMOS M9
Grounded-grid, one end of the drain electrode connection resistance R3 of PMOS M9, one end of another terminating resistor R4 of the resistance R3,
The other end ground connection of the resistance R4, the resistance R3, the junction of resistance R4 produce the output of circuit as base voltage, give
Transistor in the temperature sensing circuit provides base voltage.
A kind of aforesaid thermal-shutdown circuit for returning function with heat stagnation, it is characterised in that：The temperature sensing circuit, bag
Include PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5, PMOS M6, NMOS tube M7, NMOS tube M8, crystalline substance
Body pipe Q1, transistor Q2, resistance R1 and resistance R2,
The source electrode of PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5 and PMOS M6 connects directly
Stream power vd D, the grid of PMOS M1 and drain electrode are connected and the grid with PMOS M2, the grid of PMOS M5
Pole, the drain electrode of PMOS M3, the colelctor electrode of transistor Q1 are connected to node D1；The grid of PMOS M4 is connected with drain electrode
And the grid of the grid, PMOS M6 with PMOS M3, the drain electrode of PMOS M2, the colelctor electrode of transistor Q2 are connected
In node D2；The grid of NMOS tube M7 and drain electrode are connected and are connected to node D5 with the drain electrode of PMOS M5；
The source ground of NMOS tube M7；The grid of NMOS tube M8 is connected with node D5, the drain electrode of NMOS tube M8 with
The drain electrode connection of PMOS M6；The base stage of the transistor Q1 be connected with the base stage of transistor Q2 and with for base voltage produce
The output of circuit is connected to node D3；The emitter stage of the transistor Q1 is connected to node D4 with one end of resistance R1；Institute
The other end for stating resistance R1 is connected to ground；The emitter stage of the NPN pipes Q2 is connected with one end of resistance R2；The resistance R2's
The other end is connected to node D4 with one end of resistance R1；The drain electrode of PMOS M6 is connected with the drain electrode of NMOS tube M8
Node, is connected to output-stage circuit as the outfan of temperature sensing circuit.
A kind of aforesaid thermal-shutdown circuit for returning function with heat stagnation, it is characterised in that：The transistor Q1, transistor
Q2 adopts NPN transistor.
A kind of aforesaid thermal-shutdown circuit for returning function with heat stagnation, it is characterised in that：The output-stage circuit, including
Phase inverter INV1 and two input nand gate NAND2, the input of the phase inverter INV1 and the outfan phase of temperature sensing circuit
Connection, an input of the output termination two input nand gates NAND2 of the phase inverter INV1, two input with it is non-
Another input termination DC source VDD of door NAND2, the outfan of the two input nand gates NAND2 is used as output-stage circuit
Outfan, the outfan OTP of the outfan of the output-stage circuit for thermal-shutdown circuit.
A kind of aforesaid thermal-shutdown circuit for returning function with heat stagnation, it is characterised in that：The electricity of the DC source VDD
Press as 3.3V～5V.
The beneficial effects of the utility model are：The thermal-shutdown circuit for returning function with heat stagnation of the present utility model, including
Base voltage produces circuit, temperature sensing circuit and output-stage circuit, can be good at the change of detection chip temperature, and passes through
The work of control chip part of module reduces the effect of temperature, protects chip not to be damaged by heat, and is provided with heat stagnation and returns function
Ensure that circuit does not occur thermal oscillation, simple structure, chip occupying area are little, small power consumption, have a good application prospect.
Description of the drawings
Fig. 1 is the circuit theory diagrams of the thermal-shutdown circuit for returning function with heat stagnation of the present utility model.
Fig. 2 is working state schematic representation of this utility model when temperature increases above threshold point.
Fig. 3 is that this utility model is reduced to working state schematic representation when chip recovers normal work in temperature.
Specific embodiment
Below in conjunction with Figure of description, this utility model is further described.
As shown in figure 1, the thermal-shutdown circuit for returning function with heat stagnation of the present utility model, produces electricity including base voltage
Road 1, temperature sensing circuit 2 and output-stage circuit 3,
The base voltage produces circuit 1, produces fixed voltage using electric resistance partial pressure mode, for examining to the temperature
Transistor in slowdown monitoring circuit provides base voltage；
The temperature sensing circuit 2, produces the PTAT current relevant with temperature by transistor, according to temperature change so that
The state of PTAT current changes, and the change of PTAT current causes the state of the output voltage of temperature sensing circuit that change occurs
Change, so as to realize whether exceeding temperature threshold according to temperature, obtain the output of different overheat protectors；
The output-stage circuit 3, for increasing the driving force of overheat protector, and isolation external circuit is examined to the temperature
The impact of slowdown monitoring circuit.
The base voltage produces circuit, and including PMOS M9, resistance R3 and resistance R4, the source electrode of PMOS M9 connects
DC source VDD, the grounded-grid of PMOS M9, one end of the drain electrode connection resistance R3 of PMOS M9, the electricity
One end of another terminating resistor R4 of resistance R3, the other end ground connection of the resistance R4, the resistance R3, the junction of resistance R4 are made
The output of circuit is produced for base voltage, base voltage is provided to the transistor in the temperature sensing circuit.
The temperature sensing circuit, including PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5,
PMOS M6, NMOS tube M7, NMOS tube M8, transistor Q1, transistor Q2, resistance R1 and resistance R2,
The source electrode of PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5 and PMOS M6 connects directly
Stream power vd D, the grid of PMOS M1 and drain electrode are connected and the grid with PMOS M2, the grid of PMOS M5
Pole, the drain electrode of PMOS M3, the colelctor electrode of transistor Q1 are connected to node D1；The grid of PMOS M4 is connected with drain electrode
And the grid of the grid, PMOS M6 with PMOS M3, the drain electrode of PMOS M2, the colelctor electrode of transistor Q2 are connected
In node D2；The grid of NMOS tube M7 and drain electrode are connected and are connected to node D5 with the drain electrode of PMOS M5；
The source ground of NMOS tube M7；The grid of NMOS tube M8 is connected with node D5, the drain electrode of NMOS tube M8 with
The drain electrode connection of PMOS M6；The base stage of the transistor Q1 be connected with the base stage of transistor Q2 and with for base voltage produce
The output of circuit is connected to node D3；The emitter stage of the transistor Q1 is connected to node D4 with one end of resistance R1；Institute
The other end for stating resistance R1 is connected to ground；The emitter stage of the NPN pipes Q2 is connected with one end of resistance R2；The resistance R2's
The other end is connected to node D4 with one end of resistance R1；The drain electrode of PMOS M6 is connected with the drain electrode of NMOS tube M8
Node, is connected to output-stage circuit as the outfan of temperature sensing circuit, and transistor Q1 here, transistor Q2 are adopted
NPN transistor.
The output-stage circuit, including phase inverter INV1 and two input nand gate NAND2, the input of the phase inverter INV1
End is connected with the outfan of temperature sensing circuit, and the output of the phase inverter INV1 terminates the two input nand gates NAND2
An input, another input termination DC source VDD of the two input nand gates NAND2, two input nand gate
Outfan of the outfan of NAND2 as output-stage circuit, the outfan of the output-stage circuit is the defeated of thermal-shutdown circuit
Go out to hold OTP.
The voltage of the DC source VDD is 3.3V～5V.
The thermal-shutdown circuit for returning function with heat stagnation of the present utility model, operation principle are as follows：
As the grounded-grid of PMOS M9, PMOS M9 can be in often conducting shapes in the base voltage generation circuit
State, the expression formula such as following formula (1) of the voltage VD3 being connected in the transistor Q1, the base stage of transistor Q2 of generation,
The PTAT current of the transistor Q2 relevant with temperature is IQ2, expression formula such as following formula (2),
Wherein, VBE1The voltage difference of base stage and emitter stage for transistor Q1, VBE2Base stage and emitter stage for transistor Q2
Voltage difference, resistances of the R2 for resistance R2, k is Boltzmann constant, and q is electron charge, and T is temperature, and n is transistor Q2 and crystalline substance
The number ratio of body pipe Q1, the PTAT current I of transistor Q2Q2It is proportionate with absolute temperature, the PTAT current I of transistor Q1Q1With
Absolute temperature is in negative correlation.
In chip normal work, as temperature is raised, IQ2Increase, then I4Increase, VD2Reduce, and IQ1Reduce, then I1Subtract
It is little, VD1Increase, until node D2 is low level, node D1 is high level, now, then the temperature threshold point T for reaching a high temperature+, electricity
Line state is as shown in Fig. 2 PMOS M1, the closing of PMOS M2, PMOS M3, the conducting of PMOS M4, now temperature is alreadyd exceed
High temperature threshold value point T+, due to node D1 be high level, cause PMOS M5 close so that the electric charge of node D5 be let go for
Low level, along with node D2 is low level, now, the input of phase inverter INV1 is high level, and OTP terminals are high level,
Part of module in control chip is quit work come the temperature for reducing chip；
After chip reaches over-temperature condition, as temperature is reduced, IQ2Reduce, as node D1 causes PMOS for high level
The electric current of M3 is 0, and VD4To reduce, and VD3It is constant, so the base stage of transistor Q1 is increased with the voltage drop at emitter stage two ends,
So that transistor Q1 conductings, after transistor Q1 conductings bleed off the electric charge of node D1 up to PMOS M1, PMOS M2 pipe and turn on,
As temperature continues to reduce, IQ2Continue to reduce, then I4Reduce, VD2Increase, and IQ1Increase, then I1Increase, VD1Reduce, Zhi Daojie
Point D2 is high level, and node D1 is low level, now, then reaches the temperature threshold point T for recovering normal work-, circuit state is such as
Shown in Fig. 3, PMOS M1, the conducting of PMOS M2, PMOS M3, PMOS M4 are closed, and now, temperature is had already decreased to more than extensive
The temperature threshold point T of multiple normal work-, as node D1 is low level, cause PMOS M5 to turn on, so as to filling to node D5
Electricity is high level, along with node D2 is high level, so, the input of phase inverter INV1 is low level, and OTP terminals are low electricity
Flat, part of module in control chip is recovered normal work by this.
Foregoing description thermal-shutdown circuit recovers the temperature threshold point T of normal work-Less than high temperature threshold value point T+, so as to reality
Hysteresis function is showed, temperature hysteresis interval size is T-～T+Between.
In sum, the thermal-shutdown circuit for returning function with heat stagnation of the present utility model, produces electricity including base voltage
Road, temperature sensing circuit and output-stage circuit, can be good at the change of detection chip temperature, and pass through control chip part mould
The work of block reduces the effect of temperature, protects chip not to be damaged by heat, and is provided with heat stagnation time function and ensures that circuit does not occur
Thermal oscillation, simple structure, chip occupying area are little, small power consumption, have a good application prospect.
Ultimate principle of the present utility model and principal character and advantage of the present utility model has been shown and described above.One's own profession
The technical staff of industry it should be appreciated that this utility model is not restricted to the described embodiments, described in above-described embodiment and description
Simply illustrate principle of the present utility model, on the premise of without departing from this utility model spirit and scope, this utility model is also
Various changes and modifications are had, these changes and improvements are both fallen within the range of claimed this utility model.This utility model
Claimed scope is by appending claims and its equivalent thereof.
Claims (6)
1. it is a kind of with heat stagnation return function thermal-shutdown circuit, it is characterised in that：Circuit, temperature inspection are produced including base voltage
Slowdown monitoring circuit and output-stage circuit,
The base voltage produces circuit, produces fixed voltage using electric resistance partial pressure mode, for giving temperature detection electricity
Transistor in road provides base voltage；
The temperature sensing circuit, produces the PTAT current relevant with temperature by transistor, according to temperature change so that PTAT
The state of electric current changes, and the change of PTAT current causes the state of the output voltage of temperature sensing circuit to change, from
And realize whether temperature threshold is exceeded according to temperature, obtain the output of different overheat protectors；
The output-stage circuit, for increasing the driving force of overheat protector, and isolates external circuit to temperature detection electricity
The impact on road.
2. it is according to claim 1 it is a kind of with heat stagnation return function thermal-shutdown circuit, it is characterised in that：The base stage
Voltage generation circuit, including PMOS M9, resistance R3 and resistance R4, the source electrode of PMOS M9 meets DC source VDD, described
The grounded-grid of PMOS M9, one end of the drain electrode connection resistance R3 of PMOS M9, another termination electricity of the resistance R3
One end of resistance R4, the other end ground connection of the resistance R4, the resistance R3, the junction of resistance R4 produce electricity as base voltage
The output on road, provides base voltage to the transistor in the temperature sensing circuit.
3. it is according to claim 1 it is a kind of with heat stagnation return function thermal-shutdown circuit, it is characterised in that：The temperature
Detection circuit, including PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5, PMOS M6, NMOS tube M7,
NMOS tube M8, transistor Q1, transistor Q2, resistance R1 and resistance R2,
The source electrode of PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5 and PMOS M6 connects unidirectional current
Source VDD, the grid of PMOS M1 and drain electrode is connected and the grid with PMOS M2, the grid of PMOS M5,
The drain electrode of PMOS M3, the colelctor electrode of transistor Q1 are connected to node D1；The grid of PMOS M4 is connected simultaneously with drain electrode
And the grid of the grid with PMOS M3, PMOS M6, the drain electrode of PMOS M2, the colelctor electrode of transistor Q2 are connected to
Node D2；The grid of NMOS tube M7 and drain electrode are connected and are connected to node D5 with the drain electrode of PMOS M5；Institute
State the source ground of NMOS tube M7；The grid of NMOS tube M8 is connected with node D5, the drain electrode of NMOS tube M8 with
The drain electrode connection of PMOS M6；The base stage of the transistor Q1 be connected with the base stage of transistor Q2 and with for base voltage produce
The output of circuit is connected to node D3；The emitter stage of the transistor Q1 is connected to node D4 with one end of resistance R1；Institute
The other end for stating resistance R1 is connected to ground；The emitter stage of the transistor Q2 is connected with one end of resistance R2；The resistance R2
One end of the other end and resistance R1 be connected to node D4；The drain electrode of PMOS M6 is connected with the drain electrode of NMOS tube M8
Node, be connected to output-stage circuit as the outfan of temperature sensing circuit.
4. it is according to claim 3 it is a kind of with heat stagnation return function thermal-shutdown circuit, it is characterised in that：The crystal
Pipe Q1, transistor Q2 adopt NPN transistor.
5. it is according to claim 1 it is a kind of with heat stagnation return function thermal-shutdown circuit, it is characterised in that：The output
Level circuit, including phase inverter INV1 and two input nand gate NAND2, the input and temperature sensing circuit of the phase inverter INV1
Outfan be connected, an input of the output termination two input nand gates NAND2 of the phase inverter INV1 is described
Another input termination DC source VDD of two input nand gate NAND2, the outfan conduct of the two input nand gates NAND2
The outfan of output-stage circuit, the outfan of the output-stage circuit are the outfan OTP of thermal-shutdown circuit.
6. according to claim 2,3 or 5 it is a kind of with heat stagnation return function thermal-shutdown circuit, it is characterised in that：Institute
The voltage for stating DC source VDD is 3.3V～5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620848302.9U CN206039351U (en) | 2016-08-08 | 2016-08-08 | Excess temperature protection circuit with function is returned to heat stagnation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620848302.9U CN206039351U (en) | 2016-08-08 | 2016-08-08 | Excess temperature protection circuit with function is returned to heat stagnation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206039351U true CN206039351U (en) | 2017-03-22 |
Family
ID=58308659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620848302.9U Withdrawn - After Issue CN206039351U (en) | 2016-08-08 | 2016-08-08 | Excess temperature protection circuit with function is returned to heat stagnation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206039351U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106094961A (en) * | 2016-08-08 | 2016-11-09 | 江苏芯力特电子科技有限公司 | A kind of have heat stagnation and return the thermal-shutdown circuit of function |
| CN112068631A (en) * | 2020-09-24 | 2020-12-11 | 电子科技大学 | Anti-interference excess temperature protection circuit of low-power consumption |
-
2016
- 2016-08-08 CN CN201620848302.9U patent/CN206039351U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106094961A (en) * | 2016-08-08 | 2016-11-09 | 江苏芯力特电子科技有限公司 | A kind of have heat stagnation and return the thermal-shutdown circuit of function |
| CN112068631A (en) * | 2020-09-24 | 2020-12-11 | 电子科技大学 | Anti-interference excess temperature protection circuit of low-power consumption |
| CN112068631B (en) * | 2020-09-24 | 2021-06-08 | 电子科技大学 | Anti-interference excess temperature protection circuit of low-power consumption |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170322 Effective date of abandoning: 20170905 |
|
| AV01 | Patent right actively abandoned |