CN206814882U - A kind of hydride gas-phase epitaxy graphite boat structure - Google Patents
A kind of hydride gas-phase epitaxy graphite boat structure Download PDFInfo
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- CN206814882U CN206814882U CN201720349115.0U CN201720349115U CN206814882U CN 206814882 U CN206814882 U CN 206814882U CN 201720349115 U CN201720349115 U CN 201720349115U CN 206814882 U CN206814882 U CN 206814882U
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- graphite boat
- shielding plate
- substrate slice
- phase epitaxy
- hydride gas
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Abstract
The utility model discloses a kind of hydride gas-phase epitaxy graphite boat structure, including graphite boat and the substrate slice for being located at graphite boat upper surface, the graphite boat upper surface is equiped with shielding plate, the shielding plate is provided with the through hole matched with substrate slice size, substrate slice is located in the through hole piece that is blocked and surrounded, shielding plate is inlaid on graphite boat, or is fixedly mounted on by connector on graphite boat, and the quantity of the through hole set on shielding plate and the quantity of substrate slice are consistent.The utility model reduces the adverse effect brought due to substrate slice boundary condition using shielding plate, makes Material growth component and speed more stable homogeneous.
Description
Technical field
It the utility model is related to one kind and be used for Material growth device in HVPE growing gallium nitride reative cells, more particularly to one
The graphite boat structure of kind carrying substrate slice.
Background technology
Gallium nitride solidifies, exposes and killed in illumination, ultraviolet light as representative third generation wide band gap semiconducter
The application fields such as bacterium sterilization all have important application meaning, including semiconductor laser of bluish-green optical band etc., all with potential
Application value, but blue light and the performance of green (light) laser and related opto-electronic device all can not be carried significantly at present
Height, reason, which is that, lacks homoepitaxy substrate.Have at present in isoepitaxial growth method, including crystal growth, the hot method of ammonia
Etc. numerous technologies, from the angle analysis of reality, hydride gas-phase epitaxy（HVPE）Material growth method is expected to obtain important breakthrough.
HVPE technologies have great number of issues to need to solve during Material growth, including Flow and heat flux distribution, ammonia
Distribution with gallium chloride etc. and component uniformity problem, the problem of thermal stress release and homogeneous growth rate, in flow field and temperature
In the problem of arrangement, a problem of reactant rationally utilizes, just seem especially prominent, this is primarily due to substrate and is placed on
Graphite boat surface corresponding position, other no substrate opening position pre-reaction materials and substrate surface reactions condition are different, generation
Bulky grain molecule or generation are for the unfavorable reactant of gallium nitride quality, and these bulky grain products float to substrate upper table
Face, it will Surface Quality causes damage, for example defect increases, hillock or indenture etc. occurs, therefore, rational structure graphite boat table
Face boundary condition, is just particularly important.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of hydride gas-phase epitaxy graphite boat structure,
In order to solve the above-mentioned technical problem, the utility model takes following technical scheme：
A kind of hydride gas-phase epitaxy graphite boat structure, including graphite boat and the substrate slice for being located at graphite boat upper surface, institute
State graphite boat upper surface and be equiped with shielding plate, the shielding plate is provided with the through hole matched with substrate slice size, and substrate slice is located at should
The piece that is blocked in through hole surrounds.
The shielding plate is inlaid on graphite boat, or is fixedly mounted on by connector on graphite boat.
The quantity of the through hole set on the shielding plate and the quantity of substrate slice are consistent.
The shielding plate is structure as a whole.
The shielding plate is Split type structure, and the shielding plate is made up of some sub- shielding plates, each sub- shielding plate
It is corresponding to house a substrate slice.
The graphite boat lower surface is additionally provided with shielding plate.
Shielding plate with substrate slice identical material by being made.
The utility model encloses the shielding plate of substrate slice by setting, when including GaCl, hydrogen, nitrogen and ammonia etc.
Gas including pre-reaction material and carrier gas is reached at graphite boat surface from gas handling system, and shielding plate will further decrease due to indigo plant
The adverse effect that jewel substrate slice boundary condition is brought, make Material growth component and speed more stable homogeneous.
Brief description of the drawings
Accompanying drawing 1 is the dimensional structure diagram of the utility model embodiment one；
Accompanying drawing 2 is the dimensional structure diagram of the utility model embodiment two；
Accompanying drawing 3 is the schematic top plan view of the utility model embodiment three；
Accompanying drawing 4 is the dimensional structure diagram that the utility model implements four.
Embodiment
For the ease of the understanding of those skilled in the art, the utility model will be further described below in conjunction with the accompanying drawings.
As shown in Figure 1, the utility model discloses a kind of hydride gas-phase epitaxy graphite boat structure, including graphite boat 1
With the substrate slice 3 for being located at the upper surface of graphite boat 1, the upper surface of graphite boat 1 is equiped with shielding plate 2, the shielding plate be provided with
The through hole of substrate slice size matching, substrate slice are located in the through hole piece that is blocked and surrounded.Shielding plate is inlaid on graphite boat, or
Person is fixedly mounted on graphite boat by connector.The quantity of the through hole set on shielding plate and the quantity of substrate slice keep one
Cause.Graphite boat has the size for carrying at least one 2 inch material growth substrates, and the graphite boat can be by any suitable epitaxial
The material composition of growth, the including but not limited to material such as graphite, SiGe and carborundum.Substrate slice can include but is not limited to indigo plant
The materials such as jewel, SiGe.Material can be identical or different from substrate slice used by shielding plate, according to being actually needed flexible choosing
Select.Moreover, substrate slice can arbitrarily arrange on graphite boat, it is not particularly limited for locus.
For shielding plate, the shielding plate is structure as a whole.Or shielding plate is Split type structure, and the shielding plate by
Some sub- shielding plate compositions, each sub- shielding plate is corresponding to house a substrate slice, and more sub- shielding plates are spliced to form one
Overall shielding plate, and the shape of each sub- shielding plate can be identical or differs, and is not particularly limited.
The graphite boat lower surface is additionally provided with shielding plate, i.e., sets and block simultaneously in graphite boat upper and lower surface simultaneously
Piece, shielding plate can weaken adverse effect caused by boundary condition.
The utility model device can be placed in horizontal reative cell or vertical reative cell, under certain reaction pressure,
When graphite boat is heated to reaction temperature, when pre-reaction materials such as GaCl gases, high-purity ammonia, high-purity hydrogen and high pure nitrogens
It is and the gas including carrier gas is flow to up at graphite boat surface from gas handling system is horizontal or vertical, the indigo plant on graphite boat surface is precious
The substrate surface such as stone opening position occur surface chemical reaction, and with substrate sheet material identical shielding plate due to backing material side
Edge is adjacent or close, thus reduces the adverse effect brought due to sapphire substrate sheet boundary condition, makes Material growth component point
Cloth uniformity, growth rate also more reach unanimity.
Embodiment one
As shown in Figure 1, a substrate slice 3 is placed on graphite boat 1, a through hole is set on shielding plate 2, shielding plate will
Substrate slice is set with through-holes, and shielding plate is structure as a whole, and the periphery of shielding plate is enclosed in outside graphite boat, and it is single to be advantageous to protection
One sample external boundary growth material quality.
Embodiment two
As shown in Figure 2, four substrate slices 3 are set on graphite boat 1, shielding plate 2 is structure as a whole, while on shielding plate
Four through holes are set, and corresponding four substrate slices are installed in four through holes of shielding plate.In the structure shown here, the center of graphite boat
Substrate slice is not placed in position, belongs to hollow parts, is all protected at graphite center and its periphery with shielding plate using shielding plate
Get up, help to make the border of center position reach unanimity with external boundary growth rate.
Embodiment three
As shown in Figure 3, five substrate slices 3 are carried on graphite boat 1, shielding plate is Split type structure, by more sub- shielding plates
21 are formed, and the via regions for placing substrate slice are formed between adjacent sub- shielding plate 21.The shielding plate is by more sub- shielding plates
It is spliced to form and encloses an entirety, edges of substrate effect can be slowed down.
Example IV
As shown in Figure 4,12 substrate slices 3 are carried on graphite boat 1,12 substrate slices are by wherein 9 substrate slice structures
Into outer ring, 3 substrate slices, which are located in the outer ring, in addition forms inner ring, and the outer ring and inner ring are concentric circles.Block accordingly
12 through holes of same structure are also provided with piece 2, this shielding plate will all hide all holes outside inner ring and outer ring
Gear protection, be advantageous to the uniformity of overall growth thickness.
Both examples above concrete application not of the present utility model, this structure can apply to HVPE etc. horizontal reverse
Answer in room or vertical reative cell, can be by inlaying or by modes such as the bolts such as graphite or boron nitride fixations, by shielding plate
Be fixed on graphite boat upper surface, can also graphite boat upper and lower surface all put shielding plate, shielding plate can weaken boundary condition
Caused by adverse effect.
Clear, complete description is carried out to the utility model by the technical scheme in above example, it is clear that described
Embodiment be the utility model part of the embodiment, rather than all.It is general based on the embodiment in the utility model, this area
The every other embodiment that logical technical staff is obtained under the premise of creative work is not made, belong to the utility model guarantor
The scope of shield.
Claims (7)
1. a kind of hydride gas-phase epitaxy graphite boat structure, including graphite boat and the substrate slice for being located at graphite boat upper surface, it is special
Sign is that the graphite boat upper surface is equiped with shielding plate, and the shielding plate is provided with the through hole matched with substrate slice size, substrate
Piece is located in the through hole piece that is blocked and surrounded.
2. hydride gas-phase epitaxy graphite boat structure according to claim 1, it is characterised in that the shielding plate is inlaid in
On graphite boat, or it is fixedly mounted on graphite boat by connector.
3. hydride gas-phase epitaxy graphite boat structure according to claim 2, it is characterised in that set on the shielding plate
The quantity of through hole and the quantity of substrate slice be consistent.
4. hydride gas-phase epitaxy graphite boat structure according to claim 3, it is characterised in that the shielding plate is integrated
Structure.
5. hydride gas-phase epitaxy graphite boat structure according to claim 3, it is characterised in that
The shielding plate is Split type structure, and the shielding plate is made up of some sub- shielding plates, and each sub- shielding plate is corresponding
House a substrate slice.
6. the hydride gas-phase epitaxy graphite boat structure according to any one of claim 1-5, it is characterised in that the screening
Catch upper surface is provided with the film made of material identical with substrate slice.
7. hydride gas-phase epitaxy graphite boat structure according to claim 6, it is characterised in that
The graphite boat lower surface is additionally provided with shielding plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720349115.0U CN206814882U (en) | 2017-04-05 | 2017-04-05 | A kind of hydride gas-phase epitaxy graphite boat structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720349115.0U CN206814882U (en) | 2017-04-05 | 2017-04-05 | A kind of hydride gas-phase epitaxy graphite boat structure |
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| CN206814882U true CN206814882U (en) | 2017-12-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441945A (en) * | 2018-04-19 | 2018-08-24 | 东莞市中晶半导体科技有限公司 | A method of it improving film and grows epitaxial wafer uniformity |
| CN113463200A (en) * | 2021-06-25 | 2021-10-01 | 北京大学 | Limited area growth ring for HVPE reaction furnace and nitride crystal growth method |
-
2017
- 2017-04-05 CN CN201720349115.0U patent/CN206814882U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441945A (en) * | 2018-04-19 | 2018-08-24 | 东莞市中晶半导体科技有限公司 | A method of it improving film and grows epitaxial wafer uniformity |
| CN113463200A (en) * | 2021-06-25 | 2021-10-01 | 北京大学 | Limited area growth ring for HVPE reaction furnace and nitride crystal growth method |
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