CN205104512U - Epitaxial growth substrate - Google Patents
Epitaxial growth substrate Download PDFInfo
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- CN205104512U CN205104512U CN201520889858.8U CN201520889858U CN205104512U CN 205104512 U CN205104512 U CN 205104512U CN 201520889858 U CN201520889858 U CN 201520889858U CN 205104512 U CN205104512 U CN 205104512U
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- substrate
- epitaxial growth
- pit
- growth substrate
- substrate according
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- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000000407 epitaxy Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Abstract
The utility model aims at providing an epitaxial growth substrate, including the substrate body, its characterized in that: the bottom of substrate body has the pit array, the pit array is the not globular pit of equidimension, and it is used for epitaxial growth semiconductor wafer, distributes with year area of contact of dish and contact point bottom the modulation substrate, can effectively improve the substrate song problem of sticking up for the field distribution of wafer surface temperature tends to evenly, reduces epitaxy defect, thereby improves the quality of epitaxial growth material.
Description
Technical field
The utility model belongs to technical field of semiconductors, particularly relates to a kind of substrate of semiconductor epitaxial growth.
Background technology
Epitaxy technology is the most crucial technology of the high-quality photoelectricity of preparation and semiconductor microelectronics device, as LED, solar cell, laser and all kinds of power devices etc. that use the equipment developments such as MOCVD, MBE, HVPE semiconductor-based.
For LED, LED epitaxial wafer is obtained by MOCVD mostly, its process is generally: groove epitaxial substrate being put into graphite carrier, graphite carrier is imported in MOCVD reative cell and be heated to high temperature about 1000 DEG C, pass into the gas such as metallo-organic compound and ammonia in reative cell, regroup in wafer substrate after Pintsch process and form GaN base epitaxial loayer; Especially heating and cooling process and N-type layer growth process in, epitaxial substrate is owing to being subject to the acting in conjunction of thermal mismatching with epitaxial material and lattice mismatch, easy generation warpage issues, causes the central temperature high rim temperature of epitaxial wafer on the low side, easily forms a large amount of epitaxy defects.
The efficiency pursuing larger production capacity and Geng Gao, to reduce the unit cost of LED, is the important topic of industry always.Be developed and there is larger sized reaction chamber, also develop such as 4 inches, 6 inches even larger sized epitaxial wafer of 8 inches.For larger sized epitaxial wafer, warpage issues becomes clearly; When substrate thickness is similar, the stress being more easily subject to temperature field inhomogeneities and epitaxial film due to large-area epitaxial wafer piles up impact, and the warpage of more large-area substrate at high temperature growing epitaxial film can be more serious.
Utility model content
Not enough for solving above prior art, the utility model provides a kind of epitaxial growth substrate, it is for epitaxial semiconductor wafer, distribute with the contact area of load plate and contact point bottom modulation substrate, effectively improve substrate warped problem, make wafer surface temperature field distribution be tending towards even, reduce epitaxy defect, thus improve the quality of epitaxial grown material.
The technical solution of the utility model is: a kind of epitaxial growth substrate, comprises substrate bulk, it is characterized in that: the bottom of described substrate bulk has pit array, and described pit array is the spherical pit of different size.
Further, according to the utility model, preferably: the curvature of the spherical pit of described different size is fixing, the preferred 5m of curvature
-1~ 50m
-1.
Further, according to the utility model, preferably: under the prerequisite that spherical pit curvature is fixing, the bore of described pit diminishes from substrate center gradually along the direction pointing to edges of substrate.
Further, according to the utility model, preferably: the pit bore of described substrate center is 10mm, successively decrease along the direction pointing to edges of substrate 1mm successively.
Further, according to the utility model, preferably: under the prerequisite that spherical pit curvature is fixing, the degree of depth of described pit diminishes from substrate center gradually along the direction pointing to edges of substrate.
Further, according to the utility model, preferably: the pit depth of described substrate center is 200 μm, 10 μm are successively decreased successively along the direction pointing to edges of substrate.
Further, according to the utility model, preferably: the duty ratio of described pit array is between 65% ~ 85%.
Further, according to the utility model, preferably: the duty ratio of described pit array is 75%.
Further, according to the utility model, preferably: the arrangement mode of described pit array is regularly arranged or random alignment, wherein regularly arranged can be six side's solid matter or Square arrays.
Further, according to the utility model, preferably: the base material of described substrate is sapphire or gallium nitride or carborundum or silicon or aluminium nitride or zinc oxide.
Accompanying drawing explanation
Accompanying drawing is used to provide further understanding of the present utility model, and forms a part for specification, is used from explanation the utility model with the utility model embodiment one, does not form restriction of the present utility model.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the epitaxial growth substrate structural representation of conventional belt gulde edge.
Fig. 2 is that the substrat structure of conventional belt gulde edge is placed on load plate for warped state figure during epitaxial growth.
Fig. 3 is the epitaxial growth substrate structural section schematic diagram of the utility model embodiment 1.
Fig. 4 is that the substrat structure of the utility model embodiment 1 is placed on load plate for warped state figure during epitaxial growth.
Fig. 5 is the epitaxial growth substrate structure schematic top plan view of the utility model embodiment 2.
Symbol description in figure: 1: Sapphire Substrate body; 2: load plate; 3: pit array.
Embodiment
Be described in further detail the utility model below in conjunction with the drawings and specific embodiments, relevant correlation technique content of the present utility model, feature and effect, can know and present.
Below in conjunction with embodiment and accompanying drawing, embodiment of the present utility model is described further.
embodiment 1
With reference to shown in Fig. 3, a kind of sapphire epitaxial growth substrate structure, comprises substrate bulk 1, and the bottom of substrate bulk is provided with pit array 3.
Specifically, the base material of substrate can select sapphire or gallium nitride or carborundum or silicon or aluminium nitride or zinc oxide, and this implements preferred sapphire.
The pit array 3 of the present embodiment is made up of the spherical pit of several different sizes, and the curvature of this spherical pit is identical, keeps fixing, the preferred 25m of curvature
-1; The pit bore and the degree of depth that are wherein positioned at substrate center are maximum, diminish gradually from substrate center along the direction pointing to edges of substrate.The thermal expansion that design like this is mainly subject to due to substrate center material is piled up at most, needs the pit of larger caliber and the larger degree of depth to discharge accumulation stress; And the position thermal expansion of close edges of substrate mainly comes from the thermal expansion stress near substrate center direction, the stress of the center that compares is less.Preferably, the pit bore of substrate center is 10mm, and successively decrease along the direction pointing to edges of substrate 1mm successively; The pit depth of substrate center is 200 μm, successively decreases 10 μm successively along the direction pointing to edges of substrate.
The pit array 3 of the present embodiment takes the regularly arranged mode of six side's solid matters, and the duty ratio (namely pit array accounts for the ratio of substrate bulk projected area in the projected area of horizontal plane) of pit array 3 is between 65% ~ 85%.As duty ratio is too little, then the effect improving warpage is more weak; As duty ratio is too large, the problems such as wavelength yield is low, wavelength STD is large can be caused, and not tight with the combination of graphite load plate bottom substrate, easy film flying, therefore preferably duty ratio is 75%.
With reference to shown in Fig. 4, above-mentioned epitaxial growth substrate structure is placed on graphite load plate 2 and is used for epitaxial growth, wherein pit array 3 is set in the bottom of substrate bulk, for modulate bottom substrate with the contact area size of graphite load plate 2 and distribution.
embodiment 2
With reference to shown in Fig. 5, distinguish with embodiment 1, the pit array 3 of the present embodiment takes random alignment mode, and the pit bore of inner ring is comparatively large, and the pit bore of outer ring is less, namely diminishes gradually from substrate center along the direction pointing to edges of substrate.
The utility model by arranging the spherical pit array of different size (different in width is or/and the degree of depth) bottom the epitaxial growth substrate of routine, by bottom modulation substrate with the contact area of load plate and contact area accounting, substrate warped problem can be improved, the field distribution of epitaxial wafer surface temperature is made to be tending towards even, reduce epitaxy defect, thus improve the quality of epitaxial grown material.It is pointed out that this structure is applicable to the epitaxial growth of large-sized substrate (4 inches and more than) especially, more effective for improving warped problem.
Should be understood that; the foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle; any amendment of doing, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (10)
1. an epitaxial growth substrate, comprises substrate bulk, it is characterized in that: the bottom of described substrate bulk has pit array, and described pit array is the spherical pit of different size.
2. a kind of epitaxial growth substrate according to claim 1, is characterized in that: the curvature of the spherical pit of described different size is fixing.
3. a kind of epitaxial growth substrate according to claim 2, is characterized in that: under the prerequisite that spherical pit curvature is fixing, and the bore of described pit diminishes from substrate center gradually along the direction pointing to edges of substrate.
4. a kind of epitaxial growth substrate according to claim 3, is characterized in that: the pit bore of described substrate center is 10mm, and successively decrease along the direction pointing to edges of substrate 1mm successively.
5. a kind of epitaxial growth substrate according to claim 2, is characterized in that: under the prerequisite that spherical pit curvature is fixing, and the degree of depth of described pit diminishes from substrate center gradually along the direction pointing to edges of substrate.
6. a kind of epitaxial growth substrate according to claim 5, is characterized in that: the pit depth of described substrate center is 200 μm, successively decreases 10 μm successively along the direction pointing to edges of substrate.
7. a kind of epitaxial growth substrate according to claim 1, is characterized in that: the duty ratio of described pit array is between 65% ~ 85%.
8. a kind of epitaxial growth substrate according to claim 7, is characterized in that: the duty ratio of described pit array is between 75%.
9. a kind of epitaxial growth substrate according to claim 1, is characterized in that: the arrangement mode of described pit array is regularly arranged or random alignment.
10. a kind of epitaxial growth substrate according to claim 1, is characterized in that: the base material of described substrate is sapphire or gallium nitride or carborundum or silicon or aluminium nitride or zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520889858.8U CN205104512U (en) | 2015-11-10 | 2015-11-10 | Epitaxial growth substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520889858.8U CN205104512U (en) | 2015-11-10 | 2015-11-10 | Epitaxial growth substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205104512U true CN205104512U (en) | 2016-03-23 |
Family
ID=55520272
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520889858.8U Active CN205104512U (en) | 2015-11-10 | 2015-11-10 | Epitaxial growth substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205104512U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159052A (en) * | 2016-07-25 | 2016-11-23 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and manufacture method thereof |
| CN111987199A (en) * | 2019-05-23 | 2020-11-24 | 錼创显示科技股份有限公司 | Patterned epitaxial substrate and semiconductor structure |
| CN112086545A (en) * | 2020-08-25 | 2020-12-15 | 华灿光电(苏州）有限公司 | Gallium nitride substrate, gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof |
| US11495709B2 (en) | 2019-05-23 | 2022-11-08 | PlayNitride Display Co., Ltd. | Patterned epitaxial substrate and semiconductor structure |
-
2015
- 2015-11-10 CN CN201520889858.8U patent/CN205104512U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159052A (en) * | 2016-07-25 | 2016-11-23 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and manufacture method thereof |
| CN106159052B (en) * | 2016-07-25 | 2019-11-29 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN111987199A (en) * | 2019-05-23 | 2020-11-24 | 錼创显示科技股份有限公司 | Patterned epitaxial substrate and semiconductor structure |
| US11495709B2 (en) | 2019-05-23 | 2022-11-08 | PlayNitride Display Co., Ltd. | Patterned epitaxial substrate and semiconductor structure |
| CN112086545A (en) * | 2020-08-25 | 2020-12-15 | 华灿光电(苏州）有限公司 | Gallium nitride substrate, gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231024 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |