CN206418196U - A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle - Google Patents
A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle Download PDFInfo
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- CN206418196U CN206418196U CN201620795967.8U CN201620795967U CN206418196U CN 206418196 U CN206418196 U CN 206418196U CN 201620795967 U CN201620795967 U CN 201620795967U CN 206418196 U CN206418196 U CN 206418196U
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Abstract
This patent discloses there is provided a kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle, including：First air inlet, the air inlet of the second air inlet the 3rd；First chamber, second chamber and with the 3rd chamber；The first gas tip region, second gas tip region, the third gas tip region；The first described gas tip is connected with first chamber；Second of gas tip is connected with second chamber；The third described gas tip region and the 3rd chamber；The first described gas tip region is arranged on the outer part of the upper lower burrs module outer surface, second of gas tip region is arranged on upper lower burrs module outer surface part placed in the middle, and the third gas showerhead region is arranged on described between the first gas tip region and second of gas tip region.By using above-mentioned technical proposal, the space of the upper lower burrs component bottom rationally make use of, reduce pre-reaction, it is to avoid occur the situation of inhomogeneous growth on MOCVD pallets.
Description
Technical field
The present invention relates to the compound semiconductor film depositing device field in metal organic chemical vapor deposition, especially relate to
And to prepare gallium nitride base, Metalorganic chemical vapor deposition (MOCVD) equipment of aluminium base semiconductor the crucial air inlet of reative cell
Even gas blowout header structure.
Background technology
Metal organic meteorological chemical deposition (Metal Organic Chemical Vapor Deposition, abbreviation
MOCVD) equipment, for functional structure materials such as gan compound semiconductor, aluminium nitride, GaAs, indium phosphide, zinc oxide
Prepare.Minicomputer (monolithic or three) is applied to semiconductor applications laboratory equipment；Medium-and-large-sized machine (three or tens of machines) is fitted
For scale industrial production, such as epitaxial growth of LED illumination upstream chip, ultraviolet and deep ultraviolet chip epitaxial growth.Therefore
It is the key equipment of current compound semiconductor epitaxial material production and research, is current production semiconductor photoelectric device and microwave
The Main Means of device material, application field is extensive.
MOCVD growths are a kind of non-equilibrium growing technologies, using with metallic atom such as alkyls organic source reactant
(MO sources) and hydride (such as NH3Deng) be carried to by nitrogen or hydrogen carrier gas in reative cell, in certain pressure, temperature conditionss
Under, extension generation compound semiconductor film is deposited in substrate.
According to the different process for the compound semiconductor materials that need to be prepared, the even gas of the crucial air inlet of suitable reative cell is designed
Nozzle structure, is always the problem of MOCVD device design.The even gas blowout header structure of ideal air inlet, which both had, targetedly to be made
Standby a kind of structure of compound semiconductor novel use material, again with the general general of all compound semiconductor materials prepared
All over suitable structures.
Therefore, the MOCVD systems of the main flow such as MOCVD device of U.S. Veeco companies and Germany in the world at present
Aixtron MOCVD device, has all done a large amount of R＆D works in the crucial even gas blowout header structure of air inlet of reative cell.
The content of the invention
It is an object of the present invention to provide a kind of new even gas blowout head structural design scheme of MOCVD reative cell air inlets, can
A kind of even gas disk for reducing the pre-reaction before reacting gas arrival substrate (substrate) is provided for MOCVD device epitaxial growth.
In order to solve the above problems, on the even gas of MOCVD that a kind of H types shower nozzle is provided according to the one side of this patent
Lower wall component, for MOCVD device, including：Air inlet, the air inlet is connected including the first air inlet with the first source of the gas,
Two air inlets are connected with the second source of the gas, and the 3rd air inlet is connected with the 3rd source of the gas；The upper lower burrs component also includes chamber, described
Chamber is formed at upper lower burrs component internal, including connected with the first air inlet first chamber, connected with the second air inlet
Two chambers and the 3rd chamber connected with the 3rd air inlet；The first chamber, second chamber and the 3rd chamber are each other
Do not connect；Shower nozzle, the shower nozzle is arranged on the outer surface of the upper lower burrs component, including is arranged on the first gas tip area
The first gas shower nozzle in domain, is arranged on second of gas tip in second of gas tip region, is arranged on the spray of the third gas
The third gas tip of head region；The first described gas tip is connected with first chamber；Second of gas tip with
Second chamber is connected；The third described gas tip region and the 3rd chamber；The first described gas tip region is set
In the part that the upper lower burrs module outer surface is outer, second of gas tip region is arranged on upper lower burrs module outer surface
Part placed in the middle, the third gas showerhead region is arranged on the first described gas tip region and second of gas tip area
It is between domain, the first described gas tip region and second gas kind showerhead region is completely isolated.
Preferably, upper lower burrs component includes upper disk and lower wall setting up and down, and the upper disk is described with being arranged above and below lower wall
Metal sealing is used between upper disk and the lower wall, upper disk and lower wall contact surface is sealing surface；By to upper disk and lower wall it
Between form the chamber.
Preferably, upper lower burrs component is in the form of annular discs, and bottom surface is circle, and the first described gas tip region is located at upper lower burrs
On component bottom plane, including two along the symmetrically arranged subregion of the round diameter, and the border per sub-regions includes and institute
The circular arc of circular shape concentric is stated, and connects the line segment at circular arc two ends.
Preferably, second of gas tip region includes two subregions set along the diameter symmetry, often
The shape of sub-regions includes the belt-like zone with the diameter parallel.
Preferably, the third described gas tip region includes two sub-districts positioned at second of gas tip region
Region between domain.
Preferably, upper lower burrs component also includes water cooling plant, and the water cooling plant is close to the first described gas tip area
Domain, second of gas tip region are set.
Preferably, the water cooling plant is set away from the third described gas tip region.
Preferably, the water cooling plant is arranged between the first multiple described gas tip, and, the water cooling plant
It is additionally arranged between multiple second gas shower nozzles.
Preferably, above and below being provided perpendicular on the border of each banding subregion in second of gas tip region
The wall of disk component bottom plane.
By using above-mentioned technical proposal, the space of the gas tray bottom is rationally make use of, isolation gas can be set first
Spout reduce pre-reaction, secondly, can be evenly supplied in the diametric(al) gas of whole gas disk, so as to avoid
Occurs the situation of inhomogeneous growth on MOCVD pallets.
Brief description of the drawings
The following drawings is the detailed description to this patent specific embodiment, it will help more fully understand present disclosure
And feature, wherein：
Fig. 1 is the positive structure schematic of the even gas lower walls of MOCVD of H type shower nozzles in the specific embodiment of the invention.
Fig. 2 is the reverse structure schematic of the even gas lower walls of MOCVD of H type shower nozzles in the specific embodiment of the invention.
Fig. 3 is the schematic diagram of the even gas upper lower burrs sub-assemblies of MOCVD of H type shower nozzles in the specific embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings.It is pointed out that the embodiment is only pair
The citing of this patent optimal technical scheme, can not be interpreted as the limitation to this patent protection domain.
Fig. 1 shows a kind of structure of vapor deposition reaction equipment in the specific embodiment of the invention, as shown in Fig. 1, institute
Stating vapor deposition apparatus includes being provided with substrate 30, the pallet on gas disk and pallet 40, the pallet 40 also including rotating shaft,
For driving the pallet to rotate.When the mixed gas of the gas mixing of different component is ejected on the pallet 40,
In the presence of pallet rotation, uniformly mixing is required so as to react and be deposited on the substrate 30 for the mixed gas
The material wanted.
The gas disk is relative with the pallet 40, and for supplying mixed gas to the pallet, the gas disk is formed as
Structure suitable for supplying mixed gas, can be combined by various assemblies.
For example, being assembled in this embodiment for the convenient purpose manufactured with maintenance by multiple parts
The gas disk.The gas disk therein includes upper gas disk 10 and lower gas disk 20.In this embodiment, the gas disk difference
The gas of heterogeneity is introduced and discharges, the gas of heterogeneity is not mutually mixed in the gas disk.It can such as include
The first gas, second of gas and the third gas, wherein the first described gas and second of gas are to be used to realize
The gas of MOCVD reactions, the third gas is not involved in the MOCVD reactions but plays a part of separation gas.The upper disk
10 are arranged with lower wall about 20, and metal sealing is used between the upper disk and the lower wall, and upper disk and lower wall contact surface is sealing
Face.Pass through three independent gas chamber of division formation to the chamber between upper disk and lower wall.The gas chamber includes the
One chamber, second chamber and the 3rd chamber are respectively used to accommodate described the first gas, second of gas and the third gas, institute
State and do not connected mutually between first chamber, second chamber and the 3rd chamber.
As shown in Fig. 2 wherein described upper disk 10 is set to Flange-shaped Parts, admission line is provided with disk on described, it is described
Admission line includes the first admission line, the second admission line and the 3rd admission line.First admission line, the second air inlet
Pipeline and the 3rd admission line supply the first gas, second of gas and the third gas to the gas disk respectively.
As shown in Fig. 2 wherein, first admission line, the second admission line and the 3rd admission line are all arranged at institute
State the upper surface of disk, one end of first admission line, the second admission line and the 3rd admission line respectively with the first gas
Source, the second source of the gas and the connection of the 3rd source of the gas, different gases are supplied into the gas disk.First admission line, second enter
The other end of feed channel and the 3rd admission line respectively with the first chamber, second chamber and the 3rd chamber, for will
The first described gas, second of gas and the third gas are transported in the gas disk.
It is further preferred that being additionally provided with even device of air in the first chamber, second chamber and the 3rd chamber, for example, wrap
Include but be not limited to the structures such as even gas net, to realize the even gas of gas consequently facilitating follow-up in MOCVD chambers in corresponding chambers
Middle reaction.
As shown in figure 3, being provided with shower nozzle on the lower wall, the shower nozzle is relative with the pallet.The shower nozzle is preferably wrapped
Include the first the gas spout area 21 being arranged on the lower wall lower surface, second of gas spout area 22 and the third gas
Spout area 23.Related the first gas, second of gas and the third gas is sprayed to the pallet, to carry out correlation
MOCVD reacts.Wherein, the first described gas spout region connected with the first chamber, second of gas spout area
Domain is connected with the second chamber, the third described gas spout region and the third described gas spout regional connectivity.Due to
The first chamber, second chamber and the 3rd chamber are supplied respectively to the first gas, second of gas and the third gas, thus
The one gas spout area 21, second of gas spout area 22 and the third gas spout area 23 respectively spray first
Plant gas, second of gas and the third gas.
As shown in figure 3, the first described gas spout region 21 is formed on the lower surface of the lower wall, it is described the first
Gas spout region includes two symmetrically arranged regions, and two subregions are provided separately, the side of each sub-regions
Boundary includes the circular arc concentric with the circular lower wall lower surface, and connects the line segment at circular arc two ends.Two sub-regions edge respectively
Set to form two shapes for being similar to semicircle with the diameter symmetry of the lower wall outer surface.The first gas spout exists
It is uniformly arranged in the first described gas spout region 21, the reacted for MOCVD is sprayed in the first described gas spout
A kind of gas.Such as MO sources gas.
On the third described gas spout region 23, the lower surface for being also formed in the lower wall, the third gas spray
Mouth region domain is disposed adjacent with the first described gas spout region.Preferably, the third described gas spout region includes first
Straight line portion and second straight line part, the first straight line part and the second straight line part are set and each other in parallel to each other
It is spaced apart predetermined distance.When the lower surface of the lower wall is rounded, the first straight line part and second straight line part are excellent
Selection of land is set with the circular diameter parallel.The third gas spout is equably provided with 3rd nozzle area, institute
The 3rd chamber that the third gas spout is stated with the gas disk is connected, to spray the third gas.Preferably, in this specific implementation
In mode, described the third described gas of the third gas spout of injection injection is simultaneously not involved in the MOCVD reactions, the described 3rd
It can be separation gas, such as H to plant gas2.Will the first described gas and second of gas barrier by spraying separation gas
Come, so as to avoid carrying out pre-reaction before the substrate of the first described gas and second of gas on the pallet is contacted.
It is further preferred that in first straight line part and second straight line part in the third described gas spout region
Centroclinal predetermined distance of the portion symmetrically towards the disk.The third i.e. described gas spout region is formed as two relatively
In the symmetrical U-shaped of the disc centre, i.e., the overall shape that generally H-shaped is presented.It is corresponding, in the spray of the first described gas
The part corresponding with the bottom of the U-shaped of mouth region domain 21 also relative to other parts to the prominent predetermined distance in the center of circle, this
Sample just can further make full use of the space on the disk, it is ensured that the amount of the first gas supply is bigger, in order to meet
The need for correlated response.Because the center of the pallet is generally not provided with substrate, thus it is pre- around the lower wall center
Spout can also be not provided with by determining region, i.e. the bottom open-ended of the U-shaped.So avoid the waste and increase of gas
Unnecessary processing cost.
The periphery of the third gas spout is provided with side wall, and the side wall is along the third described gas spout region
Border set, outwardly extend predetermined distance from the chassis, the side is preferably perpendicular to the chassis
Lower surface is set.There is guide effect by the gas for setting the side wall to eject its both sides spout, so as to reduce
Mixing in certain distance below the chassis between gas with various, so as to reduce the pre-reaction of reacting gas, is improved
The effect of isolation.
Second of gas spout region 22 is arranged on the middle part for being arranged on the lower wall, i.e., positioned at the described 3rd
The region that the inner border in kind of gas spout region is crossed, the i.e. first straight line in the third gas spout region and second straight
Region between line.Second of gas spout is connected with the second chamber and the second admission line, so as to outwards spray
Second of gas, second of the gas is the gas reacted for MOCVD, such as NH3Or similar reacting gas.It is described
Second of gas spout region includes multiple second of gas spout, and the multiple second of gas spout is uniformly distributed in institute
State 22 in second of gas spout region.
The first gas spout region is so arranged on to the periphery surface side in the third gas spout region, will be described
Second of gas spout region is arranged on the inner peripheral surface in the third gas spout region, facilitates the first described gas
Reacting gas is sprayed in nozzle area and second of gas spout region in certain jet length to keep apart；Reduce reaction gas
Body reaches the pre-reaction before substrate (substrate).
Substantially be in " 23 regions of H ＂ shapes make it isolate the first gas spout region, second of gas spout region,
The area that reacting gas can uniformly be sprayed is maximized, so, and the region even close to the gas disk center of circle can also have
Even and sufficient reacting gas supply.
Simultaneously as the first gas spout region and second of gas spout region can be through the straight of the disk
Footpath is set, thus can ensure that the disk all has sufficient and uniform gas supply from inner ring to outer shroud, works as above-mentioned gas
When being supplied on the surface of the pallet, under the rotation of the pallet, the gas is driven equably to mix, thus whole support
The conversion zone of disk all has the first abundant gas and second of gas, so as to ensure that the change that is formed of sinking to the bottom in pallet
The uniform quality of compound is stable.Further, when the amount for needing the first gas and second of gas differs greatly, institute
State in long and narrow that " region of H ＂ shapes ensure that the ratio between 21 region areas isolated on MOCVD gas disks and 22 region areas
It can maximize, and not influence to be particularly suitable for use in two kinds of process gas needs in the uniformity that the tray surface gas is distributed
Measure the epitaxial growth carried out under the occasion differed greatly.
Further, water-cooling sandwich (not shown) is additionally provided with the gas disk, the water-cooling sandwich is arranged on
Around the first described gas spout and second of gas spout, and around the third described gas spout not
The water-cooling sandwich is set.The water-cooling sandwich can reduce the first described gas spout and second of gas spout spray
The temperature of the gas of injection, so as to further avoid pre-reaction of the gas before the tray surface is reached.And described
The water-cooling sandwich that correlation is not provided with around the third gas spout region ensure that in the third described gas spout region tool
There is enough spout density in the case of having less occupancy size, so as to not accounted for excessively when forming the gas curtain of enough isolation
With setting the space of second of gas spout of the first gas spout on the chassis, and the manufacture of the gas disk is conducive to add
Work so that manufacturing processing technic is easy.
Using above-mentioned gas disk MOCVD device operationally, above and below gas with various enters from upper disk 10 each air inlet pipe 12
Separate space of different shapes between disk, after even gas, from spout 251 (such as MO sources), the two " ＂ of two semicircle distributions
(such as NH of spout 252 of the distribution of shapes of word3), " H " type distribution (such as H of spout 262) spray, due to the rotation of pallet 40
Turn, the gas mixing of different component；It is ejected on lower tray 40 and substrate 30 (substrate).Under high temperature action, MO sources and NH3
Reactive deposition generates nitride material on substrate 30 (substrate).Similarly, this structure can be as completing into arsenide, phosphatization
Main method prepared by the functional structure materials such as thing, oxide.
Metallo-Organic Chemical Vapor is can be applied to using the above-mentioned gas disk and MOCVD consersion units of present embodiment to sink
Product；For the system of compound semiconductor aluminium nitride, gallium nitride, GaAs, indium phosphide, zinc oxide etc. functional structure material
It is standby.
Some other process conditions of the present invention are routine techniques technique, belong to model familiar to the person skilled in the art
Farmland, will not be repeated here.Particular embodiments described above, is carried out to the purpose of the present invention, technical scheme and beneficial effect
It is further described, should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Invention, within the spirit and principles of the invention, any process gas spout subregion variation done to this patent and structure
Other modification, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (9)
1. a kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle, for MOCVD device, including：
Air inlet, the air inlet is connected including the first air inlet with the first source of the gas, the second air inlet is connected with the second source of the gas, the
Three air inlets are connected with the 3rd source of the gas；
Characterized in that, the upper lower burrs component also includes
Chamber, the chamber is formed at upper lower burrs component internal, including connected with the first air inlet first chamber, enter with second
The second chamber of gas port connection and the 3rd chamber connected with the 3rd air inlet；The first chamber, second chamber and the 3rd
Chamber is not connected each other；
Shower nozzle, the shower nozzle is arranged on the outer surface of the upper lower burrs component, including is arranged on the first gas tip region
First gas shower nozzle, be arranged on second of gas tip in second of gas tip region, be arranged on the third gas tip
The third gas tip in region；The first described gas tip is connected with first chamber；Second of gas tip and
Two chambers；The third described gas tip region and the 3rd chamber；
The first described gas tip region is arranged on the outer part of the upper lower burrs module outer surface, second of the gas
Showerhead region is arranged on upper lower burrs module outer surface part placed in the middle, the third gas showerhead region be arranged on it is described the first
, will the first described gas tip region and second gas kind shower nozzle between gas tip region and second of gas tip region
Region is completely isolated.
2. a kind of even gas upper lower burrs components of MOCVD of H types shower nozzle according to claim 1, it is characterised in that upper lower burrs group
Part includes upper disk and lower wall setting up and down, and the upper disk is used with being arranged above and below lower wall between the upper disk and the lower wall
Metal sealing, upper disk and lower wall contact surface is sealing surface；By to forming the chamber between upper disk and lower wall.
3. the even gas upper lower burrs components of MOCVD of the H type shower nozzles according to any one of claim 1-2, it is characterised in that on
Lower wall component is in the form of annular discs, and bottom surface is circle, and the first described gas tip region is located on upper lower burrs component bottom plane, including two
It is individual that along the symmetrically arranged subregion of the round diameter, the border per sub-regions includes the circular arc with the circular shape concentric,
And the line segment at connection circular arc two ends.
4. the even gas upper lower burrs components of the MOCVD of H types shower nozzle according to claim 3, it is characterised in that second of the gas
Body showerhead region includes two subregions set along the diameter symmetry, and the shape per sub-regions includes and the diameter
Parallel belt-like zone.
5. the even gas upper lower burrs components of MOCVD of a kind of H types shower nozzle according to claim 4, it is characterised in that the described 3rd
Planting gas tip region includes the region between two sub-regions in second of gas tip region.
6. the even gas upper lower burrs components of the MOCVD of H types shower nozzle according to claim 5, it is characterised in that upper lower burrs component is also
Including water cooling plant, the water cooling plant is set close to the first described gas tip region, second of gas tip region.
7. the even gas upper lower burrs components of the MOCVD of H types shower nozzle according to claim 6, it is characterised in that the water cooling plant
Set away from the third described gas tip region.
8. the even gas upper lower burrs components of the MOCVD of H types shower nozzle according to claim 7, it is characterised in that the water cooling plant
It is arranged between the first multiple described gas tip, and, the water cooling plant is additionally arranged at multiple second gas sprays
Between head.
9. the even gas upper lower burrs components of the MOCVD of H types shower nozzle according to claim 8, it is characterised in that second of the gas
The wall of upper lower burrs component bottom plane is provided perpendicular on the border of each banding subregion of body showerhead region.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620795967.8U CN206418196U (en) | 2016-07-26 | 2016-07-26 | A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620795967.8U CN206418196U (en) | 2016-07-26 | 2016-07-26 | A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle |
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| CN206418196U true CN206418196U (en) | 2017-08-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106086818A (en) * | 2016-09-20 | 2016-11-09 | 北京中科优唯科技有限公司 | A kind of MOCVD even gas upper lower burrs assembly of H type shower nozzle |
| CN114086155A (en) * | 2022-01-18 | 2022-02-25 | 北京中科重仪半导体科技有限公司 | Gas nozzle |
-
2016
- 2016-07-26 CN CN201620795967.8U patent/CN206418196U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106086818A (en) * | 2016-09-20 | 2016-11-09 | 北京中科优唯科技有限公司 | A kind of MOCVD even gas upper lower burrs assembly of H type shower nozzle |
| CN114086155A (en) * | 2022-01-18 | 2022-02-25 | 北京中科重仪半导体科技有限公司 | Gas nozzle |
| CN114086155B (en) * | 2022-01-18 | 2022-04-15 | 北京中科重仪半导体科技有限公司 | Gas nozzle |
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Effective date of registration: 20190214 Address after: 046000 Zhangze New Industrial Park, Changzhi High-tech Zone, Shanxi Province Patentee after: Shanxi Zhongke Luan Ultraviolet Photoelectric Technology Co., Ltd. Address before: Room 708, 7th floor, No. 5 Building, 58 Jinghai Road, Daxing District Economic and Technological Development Zone, Beijing, 100176 Patentee before: BEIJING ZHONGKE YOUWILL TECHNOLOGY CO., LTD. |
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