CN206089801U - Rotatory MOCVD who mixes gas in advance goes up even gas subassembly of lower wall - Google Patents
Rotatory MOCVD who mixes gas in advance goes up even gas subassembly of lower wall Download PDFInfo
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- CN206089801U CN206089801U CN201620795924.XU CN201620795924U CN206089801U CN 206089801 U CN206089801 U CN 206089801U CN 201620795924 U CN201620795924 U CN 201620795924U CN 206089801 U CN206089801 U CN 206089801U
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Abstract
The utility model discloses a mix the even gas subassembly of gas in advance in even gas dish, include: the first gas cavity that mixes, the first headroom of mixing that has circular cross section in the muddy gas cavity, be provided with first nozzle and second injector set in the first muddy headroom, first nozzle along first gas is sprayed to two inside and outside directions of circular shape diameter, the second injector set include a plurality of along the second nozzle that circular radius set up, the second nozzle is along the perpendicular to it is gaseous that the second is sprayed to radial direction, forms rotatory air current, the second mixes the gas cavity, be provided with on the chamber wall entry with the first gas cavity intercommunication that mixes, be provided with export and the outside intercommunication of even gas subassembly on another chamber wall, and cooling layer. By adopting the above technical scheme, can improve the even degree that MOCVD reaction gas mixes to utilize the cooling layer to keep apart even gas subassembly and surrounding environment have avoided the mist to be in pre -reaction in the even gas subassembly.
Description
Technical field
The present invention relates to the compound semiconductor film depositing device in metal organic chemical vapor deposition, is related specifically to
Prepare the even gas of reative cell key air inlet of nitridation gallio, Metalorganic chemical vapor deposition (MOCVD) equipment of aluminium base quasiconductor
Nozzle structure.
Background technology
Metal organic meteorological chemical deposition (Metal Organic Chemical Vapor Deposition, abbreviation
MOCVD) equipment, for functional structure materials such as gan compound semiconductor, aluminium nitride, GaAs, indium phosphide, Zinc Oxide
Prepare.Minicomputer (monolithic or three) is suitable for semiconductor applications laboratory equlpment；Medium-and-large-sized machine (three or tens of machines) is fitted
For scale industrial production, the such as epitaxial growth of LED illumination upstream chip, ultraviolet and deep ultraviolet chip epitaxial growth etc..Therefore
It is current compound semiconductor epitaxial material production and the key equipment studied, is currently to produce semiconductor photoelectric device and microwave
The Main Means of device material, application are extensive.
MOCVD growths are a kind of non-equilibrium growing technologies, using with metallic atom such as alkyls organic source reactant
(MO sources) and hydride are (such as NH3Deng) be carried to by nitrogen or hydrogen carrier gas and react indoor, in certain pressure, temperature conditionss
Under, extension is deposited in substrate generate compound semiconductor film.
According to the different process of the compound semiconductor materials that need to be prepared, the suitable even gas of reative cell key air inlet is designed
A difficult problem for nozzle structure, always MOCVD device design.The even gas blowout header structure of the air inlet both have targetedly prepare a kind ofization
The structure of compound quasiconductor novel use material, and the general generally applicable knot with all compound semiconductor materials for preparing
Structure.
Therefore MOCVD the systems such as MOCVD device of U.S. Veeco companies and the Germany of current main flow in the world
The MOCVD device of Aixtron, has all done a large amount of R＆D works in the even gas blowout header structure of reative cell key air inlet, and some air inlets are even
Gas blowout head mature structure and its patent are monopolized by offshore company.The MOCVD device of Veeco companies of the U.S. is from three to 40 multi-discs
MOCVD device has the even gas blowout head of typical case's " slit " formula air inlet of its seriation；The MOCVD device of German Aixtron is from minicomputer
Also there is the even gas blowout head of typical case's " dot matrix " formula air inlet of its seriation to large scale computer.The ripe even gas blowout head of the air inlet by patent protection
Structure, the characteristics of the MOCVD boards of Shi Liang companies are each own different, epitaxy technique is reliable and stable.Suitable for industrialized production.
In the prior art, the even depressed structure of MOCVD reative cells key air inlet both domestic and external is all in the even gas blowout head of air inlet
The gas for participating in growth does not mix, and mixes on the pallet for carrying substrate.This can reduce the pre-reaction of gas, but to anti-
Answer the uniform mixing of gas to bring challenge, and then have impact on the quality of MOCVD productions.
The content of the invention
It is an object of the present invention to provide a kind of new even pneumatic module structure of gas MOCVD reative cell air inlets mixed in advance, can
For MOCVD device, the including but not limited to epitaxially grown MOCVD device of aluminium base, there is provided after a kind of mixed gas advance in even gas disk
Spray from shower nozzle, and the even gas disk of the pre-reaction before reacting gas arrival substrate (substrate) can be reduced.
This patent is employed the following technical solutions realizes above-mentioned purpose：
A kind of MOCVD upper lower burrs even pneumatic module of rotary premixed gas, including：First mixed gas cavity, in the mixed gas cavity
With circular cross-section first mixed headroom, is provided with first jet and second nozzle group in the described first mixed headroom；It is described
Along the circular diameter, inwardly or outwardly both direction sprays first gas to first jet；The second nozzle group includes many
The individual second nozzle arranged along the circular radius, the second nozzle is along the direction injection second perpendicular to the radius
Gas, forms swirling eddy；Second mixed gas cavity, is provided with entrance and is connected with the described first mixed gas cavity in a cavity wall；It is another
Outlet and even pneumatic module ft connection are provided with cavity wall；Cooling layer, the cooling layer are arranged on the described second mixed gas cavity
In another cavity wall.
Preferably, the cooling layer is arranged in described another cavity wall of the whole described second mixed gas cavity.
Preferably, the outlet of the described second mixed gas cavity is arranged through the cooling layer.
Preferably, even air screen, the even air screen are provided between the described first mixed gas cavity and the second mixed gas cavity
On be provided with multiple even pores, the entrance of outlet and second mixed gas cavity of the even pore as the described first mixed gas cavity.
Preferably, the even pneumatic module of the rotary premixed gas also includes：First air inlet duct and the second air inlet duct；Described first enters
One end of air drain is connected with first air inlet pipe, and the other end is connected with the first jet；One end of second air drain
It is connected with second air inlet pipe, the other end is connected with the second nozzle group.
Preferably, first air inlet duct be in cross, including two intersection linear air drains, cross point with it is described
The circular center of circle overlaps；On four sides of first air inlet duct, corresponding position is respectively arranged with first jet.This four
The center of circle of upper rminal disc described in nozzle distance apart from equal, and each other in 90 degree of angle.
Preferably, second air inlet duct includes four air drains arranged along the upper rminal disc radius, and two adjacent
90 degree of angle is formed between air drain；First air inlet duct and the second air inlet duct are staggeredly uniformly distributed in the circle, phase
It is in 45 degree of angles between the adjacent air drain of the first air inlet duct and the air drain of the second air inlet duct.
And, a kind of gas reaction equipment, it is characterised in that the gas reaction equipment includes：Even pneumatic module, it is described even
Pneumatic module is as described in above-mentioned any one；Reaction chamber, the Hun Qi cavity exits UNICOM of the reaction chamber and the gas disk；Substrate
Pallet, the substrate pallet accept the mixed gas of the mixed gas cavity output.
By adopting above-mentioned technical proposal, can be before MOCVD reacting gas be reacted by the gas for reaction
Mixed in the even pneumatic module, improve the uniformity coefficient of gas mixing, and isolate the even gas using cooling layer
Component and surrounding, it is to avoid pre-reactions of the mixed gas in the even pneumatic module.
Description of the drawings
It is the detailed description to specific embodiment below with reference to accompanying drawing, it will more fully understand present disclosure and spy
Point, wherein：
Fig. 1 is the assembly structure diagram of the rotary premixed even pneumatic module of MOCVD upper lower burrs in the specific embodiment of the invention；
Fig. 2 is the signal of disk on even gas in the rotary premixed even pneumatic module of MOCVD upper lower burrs in the specific embodiment of the invention
Figure.
Fig. 3 is the signal of even gas lower wall in the rotary premixed even pneumatic module of MOCVD upper lower burrs in the specific embodiment of the invention
Figure.
Fig. 4 is the assembling schematic diagram of the rotary premixed even pneumatic module of MOCVD upper lower burrs in the specific embodiment of the invention.
Specific embodiment
Below in conjunction with the accompanying drawings specific implementation of the patent mode is described in detail, it should be pointed out that the concrete reality
It is only the citing to this patent optimal technical scheme to apply mode, can not be interpreted as the restriction to this patent protection domain.
Embodiment one
A kind of even pneumatic module is provided in this specific embodiment, its structure is as shown in Figure 1.The even pneumatic module includes
Take over a business 10 and lower wall 20.The structure of upper rminal disc 10 is wherein figure 2 show, Fig. 3 shows the structure of lower wall 20.Upper rminal disc and lower wall
Fit together the even pneumatic module main body to form this specific embodiment.
As shown in Fig. 2 the upper rminal disc is in Flange-shaped Parts.The upper surface of the upper rminal disc is provided with air inlet pipe.With from gas
Gas is supplied to the inside of the upper rminal disc in source.The air inlet pipe preferably includes the first air inlet pipe, the second air inlet pipe and the 3rd and enters
Trachea, one end of each trachea other end that is connected with the gas disk are connected with source of the gas.Thereby, first air inlet pipe,
Two air inlet pipe and the 3rd air inlet pipe are separately connected with the first source of the gas, the second source of the gas and the 3rd source of the gas, to the even gas group
Part supply first gas, second gas and third gas.
The lower surface of the upper disk is provided with even gas chamber 21, and the even gas chamber provides the first gas, the second gas
First mixed headroom of body, the even gas chamber are connected with first air inlet pipe and the second air inlet pipe, there is provided come from the
The space that one air inlet pipe, the first gas of the second air inlet pipe, second gas are mixed.Described first mixed headroom is in downwardly open
Circular groove, the cell wall extends downwardly predetermined length from the bottom surface of the upper rminal disc 10, and the blind end of the groove is as above-mentioned
A part for the bottom surface of upper rminal disc.The circular groove is arranged concentrically with the upper rminal disc.
The upper disk is internally provided with the first air inlet duct and the second air inlet duct, first air inlet duct and the second air inlet duct
It is respectively positioned on inside the disk body of the upper disk.One end of first air inlet duct is connected with first air inlet pipe, the other end with
Described first mixed headroom is connected；One end of second air drain is connected with second air inlet pipe, the other end with it is described
Second mixed headroom is connected.Can buffer and be supplied to the upper rminal disc by arranging first air inlet duct and the second air inlet duct
In gas so that the gas in first air inlet duct and the second air inlet duct relatively evenly can be supplied, and be easy to
Multiple positions in the described first mixed headroom arrange multiple nozzles, and keep the uniformity of nozzle sprays gas.
As shown in Fig. 2 first air inlet duct be in cross, including two intersection linear air drains, cross point with
The center of circle of the upper disk overlaps.On four sides of first air inlet duct, corresponding position is respectively arranged with first jet 102.
The center of circle of this upper rminal disc described in four nozzle distances apart from equal, and each other in 90 degree of angle.Material is thus formed
The equally distributed first jet in the mixed gas cavity.Two spouts are provided with each described first jet, respectively along
The upper rminal disc diametric(al) outwardly or inwardly sprays first gas, is formed along diametric first air-flow.
Second air inlet duct includes four air drains arranged along the upper rminal disc radius, between two adjacent air drains
Form 90 degree of angle.It is further preferred that four gas in four air drains and the second air inlet duct in first air inlet duct
The overall alternate along the upper rminal disc of groove is uniformly distributed, the air drain and the gas of the second air inlet duct of adjacent the first air inlet duct
It is in 45 degree of angles between groove.So it is achieved that the first air drain and the entirety of the second air drain are uniformly arranged, is conducive to the mixed of gas
Close.
Each of four air drains in second air inlet duct is connected with a second nozzle group, the second nozzle
Group extends along the radial direction of upper rminal disc.Include multiple second nozzles 101, adjacent second nozzle in each second nozzle group
Between interval it is identical.Each nozzle in each nozzle sets forms second spout, the spray towards same direction
The direction of mouth jet-stream wind is vertical with the diameter of the upper rminal disc, so as to be formed clockwise or along side counterclockwise
To the second air-flow.
As first air-flow and the second air-flow are vertical, and it is evenly distributed, thus can in the first mixed headroom
Mixed gas for the first time is realized, the quality and speed of mixed gas is improve.
As shown in figure 3, the lower wall 20 is arranged on the bottom of the upper rminal disc 10, the top of the lower wall 20 is formed with
Two mixed headrooms, the described second mixed headroom are the circular groove of an opening upwards, and the bottom of the groove is the lower wall
A part for upper surface, the cylindrical side wall of the groove are upwardly extended from the lower wall upper surface.Described second mixed headroom with
Described first mixed headroom is oppositely arranged, and the described first mixed headroom is identical with the opening diameter of the second mixed headroom, and passes through
Sealing surface 13a settings in sealing contact, material is thus formed a UNICOM and relatively closed mixed headroom.
Even air screen 30 is provided between described first mixed headroom and the second mixed headroom, is provided with the even air screen many
Individual even pore 301, when the gas in the described first mixed headroom is entered in the described second mixed headroom, through the even gas
The even gas of screen can realize further uniform mixing.The gas mixed in the described first mixed headroom is through the even air screen
Even gas after uniformly spray in the described second mixed headroom, be so conducive to carrying out second in the described second mixed headroom
Secondary uniform mixing.
The bottom of the described second mixed headroom offers mixed gas outlet 201, and the mixed gas outlet is from described the
Two mixed headrooms extend through the lower wall, and the mixed gas in the described second mixed headroom are sprayed.
The lower wall is internally provided with water-cooling sandwich 22, accommodates cooling liquid, including but not limited in the water-cooling sandwich
Various cooling liquids or solid etc..Told mixed gas outlet passes through the water-cooling sandwich, as shown in Figure 3.
By arranging the water-cooling sandwich, can by the reative cell of the mixed gas chamber and underlying gas consersion unit every
From, it is to avoid reative cell is heated so as to produce pre-reaction for the gas in the mixed gas chamber.It is further possible to mixed for described
Gas in gas chamber is cooled down, it is to avoid pre-reaction.
Embodiment two
A kind of MOCVD device is provided in the present embodiment, and its structure is as shown in Figure 4.The MOCVD device is included strictly according to the facts
Apply the even pneumatic module and reaction chamber (not shown) described in example one
Into columnar structured, the even pneumatic module is arranged on the top of the reaction chamber to the reaction chamber, described anti-
The bottom of chamber is answered to be provided with rotary-tray 40, rotation is provided with the rotary-tray includes substrate 50.
Metal sealing is adopted between the upper disk 10 and lower wall 20 of the even pneumatic module in the MOCVD device.Upper disk 10 is with
Even air screen 30 is housed between disk 20.Rotary premixed gas, even headroom 12 are formed between upper disk 10 and even air screen 30；Lower wall 20 with it is even
Secondary mixed gas, even headroom 21 are formed between air screen 30.
The process gas (such as MO sources) of the participation reaction sprayed in first spout 101 of upper disk 10 is due to its first gas
Air-flow initial velocity effect, formed along space 12 circumferencial direction rotate air-flow；The ginseng sprayed with the spout 102 in upper disk 10
Plus the process gas of reaction is mixed with (such as NH3) rotation, and mixed gas concentration is made in 12 spatial homogenizations.Jing is in upper disk
Once premix gas after, the even pore of the even air screen of MOCVD mixed reaction gas Jing 30 carries out secondary in the described second mixed headroom
Mixing, and make mixed gas concentration in the second mixed headroom second homogenisation, form secondary mixed gas.
The gas outlet 201 of mixed gas Jing lower walls 20 again sprays to the pallet 40, due to the rotation of pallet 40, mixes
The mixed gas of the different component (MO sources and NH3) for getting togather；It is ejected on lower tray 40 and substrate 50 (substrate).Make in high temperature
With under, the MO sources and NH3 reactive deposition on substrate 50 (substrate) generates nitride material.
In the same manner, this structure can as complete into the functional structure materials such as arsenide, phosphide, oxide preparation it is main
Method.
" the rotary premixed even pneumatic module of MOCVD upper lower burrs " in the present invention is applied to metal organic chemical vapor deposition
MOCVD device；Can be MOCVD device, including but not limited to aluminium base epitaxial growth MOCVD device, there is provided one kind is in even gas disk
The even gas disk for spraying from shower nozzle after mixed gas in advance.Can be used for compound semiconductor aluminium nitride, gallium nitride, GaAs, indium phosphide, oxygen
Change the preparation of zinc etc. functional structure material.The patent of invention is related to MOCVD device growth mechanism." on rotary premixed MOCVD
The even pneumatic module of lower wall " is the core component of the epitaxially grown critical developmental cell structure of the kind equipment aluminium base.It may be said that MOCVD epitaxy
Compound structure depend almost entirely on the even gas dish structures of MOCVD and mechanism.
Other process conditions more according to the present invention are routine techniquess technique, and also emphasis is led for specific new technique
Domain, for example, grow al-based compound semi-conducting material, and the application of the al-based compound semi-conducting material includes but popular at present
The field such as deep-UV light-emitting LED.These belong to category familiar to the person skilled in the art, will not be described here.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Describe bright, the be should be understood that specific embodiment that the foregoing is only the present invention in detail, be not limited to the present invention, it is all
Within the spirit and principles in the present invention, " the rotary premixed even pneumatic module of MOCVD upper lower burrs " patent is used for changing without permission
The preparation of the functional structure materials such as compound semiconductor gallium nitride, aluminium nitride, GaAs, indium phosphide, Zinc Oxide, also should be included in
Within protection scope of the present invention；That wherein " the rotary premixed even pneumatic module of MOCVD upper lower burrs " patent structure is done is any
Process gas premix headroom shape variation and structure derivative modification, equivalent, improvement etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (7)
1. the even pneumatic module of MOCVD upper lower burrs of a kind of rotary premixed gas, it is characterised in that include：
First mixed gas cavity, the with circular cross-section first mixed headroom in the mixed gas cavity, in the described first mixed headroom
It is provided with first jet and second nozzle group；The first jet is along the circular radial inward and the spray of outside both direction
Penetrate first gas；The second nozzle group includes multiple second nozzles arranged along the circular radius, the second nozzle
Along the direction injection second gas perpendicular to the radius, swirling eddy is formed；
Second mixed gas cavity, is provided with entrance and is connected with the described first mixed gas cavity in a cavity wall；It is provided with out in another cavity wall
Mouth and even pneumatic module ft connection；
Cooling layer, the cooling layer are arranged in described another cavity wall of the described second mixed gas cavity.
2. the even pneumatic module of MOCVD upper lower burrs of a kind of rotary premixed gas according to claim 1, it is characterised in that described
Cooling layer is arranged in described another cavity wall of the whole described second mixed gas cavity.
3. the even pneumatic module of MOCVD upper lower burrs of rotary premixed gas according to claim 1 and 2, it is characterised in that described
The outlet of two mixed gas cavitys is arranged through the cooling layer.
4. the even pneumatic module of MOCVD upper lower burrs of rotary premixed gas according to claim 1, it is characterised in that described first
Even air screen is provided between mixed gas cavity and the second mixed gas cavity, multiple even pores on the even air screen, are provided with, it is described
The entrance of outlet and second mixed gas cavity of the even pore as the described first mixed gas cavity.
5. the even pneumatic module of MOCVD upper lower burrs of a kind of rotary premixed gas according to claim 1, it is characterised in that
The even pneumatic module also includes：First air inlet duct and the second air inlet duct；
One end of first air inlet duct is connected with first air inlet pipe, and the other end is connected with the first jet；It is described
One end of second air drain is connected with second air inlet pipe, and the other end is connected with the second nozzle group.
6. the even pneumatic module of MOCVD upper lower burrs of a kind of rotary premixed gas according to claim 5, it is characterised in that：
First air inlet duct is in cross, including the linear air drains of two intersections, the center of circle of cross point and the circle
Overlap；On four sides of first air inlet duct, corresponding position is respectively arranged with first jet；Four first jets
Apart from the center of circle apart from equal, and each other in 90 degree of angle.
7. the even pneumatic module of MOCVD upper lower burrs of a kind of rotary premixed gas according to claim 6, it is characterised in that：
Second air inlet duct includes four air drains arranged along the circular radius, is formed between two adjacent air drains
90 degree of angle；
First air inlet duct and the second air inlet duct are staggeredly uniformly distributed in the circle, the air drain of adjacent the first air inlet duct
And second air inlet duct air drain between be in 45 degree of angles.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620795924.XU CN206089801U (en) | 2016-07-26 | 2016-07-26 | Rotatory MOCVD who mixes gas in advance goes up even gas subassembly of lower wall |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620795924.XU CN206089801U (en) | 2016-07-26 | 2016-07-26 | Rotatory MOCVD who mixes gas in advance goes up even gas subassembly of lower wall |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106011792A (en) * | 2016-07-26 | 2016-10-12 | 北京中科优唯科技有限公司 | MOCVD (metal organic chemical vapor deposition) upper and lower disc gas equalizing assembly for rotary premixed gas |
| CN108728820A (en) * | 2017-04-19 | 2018-11-02 | 北京北方华创微电子装备有限公司 | Gas mixed nub structure, processing chamber and semiconductor processing equipment |
| WO2019119907A1 (en) * | 2017-12-22 | 2019-06-27 | 江苏鲁汶仪器有限公司 | Vapor deposition device and method |
| CN115852342A (en) * | 2023-03-02 | 2023-03-28 | 山西方维晟智能科技有限公司 | Diamond vapor deposition device |
-
2016
- 2016-07-26 CN CN201620795924.XU patent/CN206089801U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106011792A (en) * | 2016-07-26 | 2016-10-12 | 北京中科优唯科技有限公司 | MOCVD (metal organic chemical vapor deposition) upper and lower disc gas equalizing assembly for rotary premixed gas |
| CN106011792B (en) * | 2016-07-26 | 2019-01-29 | 北京中科优唯科技有限公司 | The even pneumatic module of MOCVD upper lower burrs of rotary premixed gas |
| CN108728820A (en) * | 2017-04-19 | 2018-11-02 | 北京北方华创微电子装备有限公司 | Gas mixed nub structure, processing chamber and semiconductor processing equipment |
| CN108728820B (en) * | 2017-04-19 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Gas mixing structure, process chamber and semiconductor processing equipment |
| WO2019119907A1 (en) * | 2017-12-22 | 2019-06-27 | 江苏鲁汶仪器有限公司 | Vapor deposition device and method |
| CN115852342A (en) * | 2023-03-02 | 2023-03-28 | 山西方维晟智能科技有限公司 | Diamond vapor deposition device |
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| TR01 | Transfer of patent right |
Effective date of registration: 20190214 Address after: 046000 Zhangze New Industrial Park, Changzhi High-tech Zone, Shanxi Province Patentee after: Shanxi Zhongke Luan Ultraviolet Photoelectric Technology Co., Ltd. Address before: Room 708, 7th floor, No. 5 Building, 58 Jinghai Road, Daxing District Economic and Technological Development Zone, Beijing, 100176 Patentee before: BEIJING ZHONGKE YOUWILL TECHNOLOGY CO., LTD. |
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