CN206363047U - 一种显示面板及显示装置 - Google Patents
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Abstract
本实用新型实施例公开了一种显示面板及显示装置。该显示面板包括相对而置的阵列基板和对向基板;其中,阵列基板包括与所述对向基板相对的对盒区域和位于所述对盒区域一侧的电路测试区域;所述对向基板包括衬底基板、在衬底基板面向所述阵列基板的一侧设置的导电黑矩阵;该显示面板还包括分别与所述导电黑矩阵和所述电路测试区域GND走线电连接的静电释放层;所述导电黑矩阵至少在与所述静电释放层接触区域具有厚化区;所述导电黑矩阵的厚化区的厚度大于厚化区以外区域的厚度。本方案有利于静电释放,提高抗静电能力。
Description
技术领域
本实用新型涉及显示技术领域,尤其涉及一种显示面板及显示装置。
背景技术
液晶显示面板的抗静电性能是衡量显示面板质量的一个重要指标,显示面板抗静电性能的改善,有利于提高面板性能,满足客户端可靠性测试要求。
现有的一种显示面板,如图1所示,包括相对设置的阵列基板1和彩膜基板2。其中,阵列基板1包括与彩膜基板2相对的对盒区和位于对盒区一侧的电路测试区。对盒时,阵列基板1与彩膜基板2通过封框胶3封装边框区域。其中,彩膜基板2包括玻璃基板21,在玻璃基板21面向阵列基板的一侧依次设置有导电黑矩阵22,平坦层23和液晶取向层24。为了改善显示面板的抗静电性能,设置导电黑矩阵22边缘外切(即边缘突出于玻璃基板21),导电黑矩阵22外切的边缘与电学测试区连接的Ag胶点4接触,从而可以将面板内部的静电通过电学测试区接地(Ground,GND)线(如图1所示的源极引线11)释放。但是,由于导电黑矩阵22外切有限,与Ag胶点4不能充分接触,导致静电释放效果不明显。
实用新型内容
本实用新型实施例的目的是提供一种显示面板及显示装置,用于提高静电释放效果。
本实用新型实施例的目的是通过以下技术方案实现的:
一种显示面板,包括相对而置的阵列基板和对向基板;其中,阵列基板包括与所述对向基板相对的对盒区域和位于所述对盒区域一侧的电路测试区域;所述对向基板包括衬底基板、在所述衬底基板面向所述阵列基板的一侧设置的导电黑矩阵;该显示面板还包括分别与所述导电黑矩阵和所述电路测试区域GND走线电连接的静电释放层;
所述导电黑矩阵至少在与所述静电释放层接触区域具有厚化区;所述导电黑矩阵的厚化区的厚度大于厚化区以外区域的厚度。
较佳地,在靠近所述电路测试区域的侧边上,所述导电黑矩阵的厚化区突出于所述衬底基板。
较佳地,所述导电黑矩阵在沿着远离所述电路测试区域的其余侧边上具有防止外部静电的挖槽;
所述导电黑矩阵的厚化区包围所述挖槽。
较佳地,所述对向基板还包括:与所述导电黑矩阵层叠设置的平坦层。
较佳地,所述平坦层仅与所述导电黑矩阵在所述挖槽包围的区域层叠设置;
所述导电黑矩阵的厚化区的厚度,等于所述导电黑矩阵在所述挖槽包围的区域内的厚度与所述平坦层的厚度之和。
较佳地,所述导电黑矩阵的厚化区的厚度的范围是1.8μm~2.2μm。
较佳地,所述静电释放层为导电胶。
较佳地,所述导电胶为Ag胶点。
较佳地,所述对向基板为彩膜基板。
一种显示装置,包括如以上任一项所述的显示面板。
本实用新型实施例的有益效果如下:
本实用新型实施例提供的显示面板及显示装置中,导电黑矩阵设置有厚化区,一方面,该厚化区与静电释放层接触,增加了二者的接触面积,电阻降低,进而加速了电荷移动,提高了静电释放效果,提高了抗静电能力,另一方面,导电黑矩阵本身厚度增加,电阻降低,也有利于静电释放,提高抗静电能力。
附图说明
图1为现有技术中的一种显示面板的结构示意图;
图2为本实用新型实施例提供的一种显示面板的结构示意图之一;
图3为本实用新型实施例提供的一种显示面板的结构示意图之二;
图4为本实用新型实施例提供的一种显示面板的结构示意图之三;
图5为本实用新型实施例提供的一种显示面板的结构示意图之四。
具体实施方式
为了提高静电释放效果,本实用新型实施例提供一种显示面板及显示装置。本实用新型实施例提供的显示面板,包括相对而置的阵列基板和对向基板;其中,阵列基板包括与对向基板相对的对盒区域和位于对盒区域一侧的电路测试区域;对向基板包括衬底基板、在衬底基板面向阵列基板的一侧设置的导电黑矩阵;该显示面板还包括分别与导电黑矩阵和电路测试区域GND走线电连接的静电释放层;导电黑矩阵至少在与静电释放层接触区域具有厚化区;导电黑矩阵的厚化区的厚度大于厚化区以外区域的厚度。
其中,电路测试区域主要是用于设置单元测试(Cell Test)电路的区域。
本实用新型实施例中,导电黑矩阵设置有厚化区,一方面,该厚化区与静电释放层接触,增加了二者的接触面积,电阻降低,进而加速了电荷移动,提高了静电释放效果,提高了抗静电能力,另一方面,导电黑矩阵本身厚度增加,电阻降低,也有利于静电释放,提高抗静电能力。
下面结合附图和实施例对本实用新型提供的方案进行更详细地说明。
如图2所示,本实用新型实施例提供的显示面板,包括相对而置的阵列基板001和对向基板002;其中,阵列基板001包括与对向基板002相对的对盒区域011和位于对盒区域一侧的电路测试区域012;对向基板002包括衬底基板021、在衬底基板021面向阵列基板001的一侧设置的导电黑矩阵022;该显示面板还包括分别与导电黑矩阵022和电路测试区域012GND走线013电连接的静电释放层003;导电黑矩阵022至少在与静电释放层003接触区域具有厚化区221;导电黑矩阵022的厚化区221的厚度大于厚化区以外区域的厚度。
从图2中可以看出,导电黑矩阵022与静电释放层003的接触区域比较厚,与图1所示的现有技术相比,接触面积增加了,降低了电阻,加速了电荷移动,提高了静电释放效果,从而提高了抗静电能力。
图1中,阵列基板001与对向基板002在对盒区域的边缘通过封框胶004对盒封装。
较佳地,如图3所示,在靠近电路测试区域012的侧边上,导电黑矩阵022的厚化区221突出于衬底基板021。本实施例中,导电黑矩阵022靠近电路测试区域012的侧边就是与静电释放层003接触的侧边,设置该侧边上导电黑矩阵与静电释放层接触的边缘突出于衬底基板,即有外切部,这样,增加了导电黑矩阵裸露的面积,进而增加了静电释放层与导电黑矩阵接触的面积,进一步提高了静电释放效果。
较佳地,如图4所示,导电黑矩阵022在沿着远离电路测试区域012的其余侧边上具有防止外部静电的挖槽222;导电黑矩阵的厚化区221(图4中以颜色加深部分示意)包围挖槽222。本实施例中,设置的挖槽可以防止外部静电进入显示面板内部,进一步提高了抗静电性能,并且将导电黑矩阵的所有侧边的边缘全部加厚,进一步降低电阻,提高静电释放效果,进一步提高了抗静电性能。
较佳地,如图2和图3所示的显示面板,对向基板还包括:与导电黑矩阵层叠设置的平坦层023。为了进一步提高静电释放效果,较佳地,如图5所示,平坦层023仅与导电黑矩阵022在挖槽222包围的区域层叠设置;导电黑矩阵的厚化区的厚度,等于导电黑矩阵在挖槽包围的区域内的厚度与平坦层的厚度之和。本实施例中,挖槽以外边缘的导电黑矩阵完全代替了平坦层,进一步增加了厚度,降低了导电黑矩阵的电阻,提高了静电释放效果。
导电黑矩阵的厚化区的厚化程度,可以根据实际需要进行设置,以达到更好的静电释放效果,例如,导电黑矩阵的厚化区的厚度的范围可以是1.8μm~2.2μm。
基于以上任意实施例,静电释放层的材料有多种,静电释放层可以但不限于为导电胶。
其中,导电胶可以但不限于为Ag胶点。
本实用新型实施例可以应用于液晶显示面板,对向基板为彩膜基板,如图2、图3和图5所示,对向基板上还包括液晶取向层024。
较佳地,以上相关实施例中,电路测试区域GND走线为源极引线。
基于以上任意实施例,在设置有厚化区的导电黑矩阵的制作工艺中,可以利用灰色调掩模版进行制备,例如,在一种具体的工艺中,可以是:
在衬底基板上涂覆一整层的导电黑矩阵材料;然后涂覆光刻胶;利用灰色调掩模版进行曝光,在光刻胶层中与厚化区对应的区域形成完全保留区域,在与其它需要遮光的部分对应的区域形成部分保留区域,在剩余部分形成完全去除区域;利用完全去除区域对导电黑矩阵进行刻蚀;然后对光刻胶进行灰化处理,完全去除部分保留区域的光刻胶,部分去除完全保留区域的光刻胶;对导电黑矩阵进行刻蚀,减薄部分保留区域的导电黑矩阵。
基于同样的构思,本实用新型实施例还提供一种显示装置,包括如以上任意实施例所述的显示面板。
本实用新型实施例提供的显示面板及显示装置中,导电黑矩阵设置有厚化区,一方面,该厚化区与静电释放层接触,增加了二者的接触面积,电阻降低,进而加速了电荷移动,提高了静电释放效果,提高了抗静电能力,另一方面,导电黑矩阵本身厚度增加,电阻降低,也有利于静电释放,提高抗静电能力。
显然,本领域的技术人员可以对本实用新型进行各种改动和变型而不脱离本实用新型的精神和范围。这样,倘若本实用新型的这些修改和变型属于本实用新型权利要求及其等同技术的范围之内,则本实用新型也意图包含这些改动和变型在内。
Claims (10)
1.一种显示面板,其特征在于:包括相对而置的阵列基板和对向基板;其中,阵列基板包括与所述对向基板相对的对盒区域和位于所述对盒区域一侧的电路测试区域;所述对向基板包括衬底基板、在所述衬底基板面向所述阵列基板的一侧设置的导电黑矩阵;该显示面板还包括分别与所述导电黑矩阵和所述电路测试区域接地GND走线电连接的静电释放层;
所述导电黑矩阵至少在与所述静电释放层接触区域具有厚化区;所述导电黑矩阵的厚化区的厚度大于厚化区以外区域的厚度。
2.根据权利要求1所述的显示面板,其特征在于,在靠近所述电路测试区域的侧边上,所述导电黑矩阵的厚化区突出于所述衬底基板。
3.根据权利要求2所述的显示面板,其特征在于,所述导电黑矩阵在沿着远离所述电路测试区域的其余侧边上具有防止外部静电的挖槽;
所述导电黑矩阵的厚化区包围所述挖槽。
4.根据权利要求3所述的显示面板,其特征在于,所述对向基板还包括:与所述导电黑矩阵层叠设置的平坦层。
5.根据权利要求4所述的显示面板,其特征在于,所述平坦层仅与所述导电黑矩阵在所述挖槽包围的区域层叠设置;
所述导电黑矩阵的厚化区的厚度,等于所述导电黑矩阵在所述挖槽包围的区域内的厚度与所述平坦层的厚度之和。
6.根据权利要求1~5任一项所述的显示面板,其特征在于,所述导电黑矩阵的厚化区的厚度的范围是1.8μm~2.2μm。
7.根据权利要求1所述的显示面板,其特征在于,所述静电释放层为导电胶。
8.根据权利要求7所述的显示面板,其特征在于,所述导电胶为Ag胶点。
9.根据权利要求1所述的显示面板,其特征在于,所述对向基板为彩膜基板。
10.一种显示装置,其特征在于,包括如权利要求1~9任一项所述的显示面板。
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CN108333834A (zh) * | 2018-03-19 | 2018-07-27 | 京东方科技集团股份有限公司 | 彩膜基板及制作方法、显示面板及制作方法、显示装置 |
CN110286536A (zh) * | 2019-06-28 | 2019-09-27 | 京东方科技集团股份有限公司 | 屏幕检测电路、阵列基板及显示面板 |
CN113179623A (zh) * | 2021-04-06 | 2021-07-27 | 武汉华星光电半导体显示技术有限公司 | 显示模组 |
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CN104460070B (zh) * | 2014-12-31 | 2018-09-07 | 合肥鑫晟光电科技有限公司 | 显示面板及其制作方法、显示装置 |
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CN108333834A (zh) * | 2018-03-19 | 2018-07-27 | 京东方科技集团股份有限公司 | 彩膜基板及制作方法、显示面板及制作方法、显示装置 |
CN110286536A (zh) * | 2019-06-28 | 2019-09-27 | 京东方科技集团股份有限公司 | 屏幕检测电路、阵列基板及显示面板 |
CN113179623A (zh) * | 2021-04-06 | 2021-07-27 | 武汉华星光电半导体显示技术有限公司 | 显示模组 |
CN113179623B (zh) * | 2021-04-06 | 2022-11-01 | 武汉华星光电半导体显示技术有限公司 | 显示模组 |
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