CN206362470U - A kind of high insulation resistance of resistance to 500V sputtered film sensing element - Google Patents
A kind of high insulation resistance of resistance to 500V sputtered film sensing element Download PDFInfo
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- CN206362470U CN206362470U CN201621384143.8U CN201621384143U CN206362470U CN 206362470 U CN206362470 U CN 206362470U CN 201621384143 U CN201621384143 U CN 201621384143U CN 206362470 U CN206362470 U CN 206362470U
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Abstract
The utility model is related to a kind of high insulation resistance of resistance to 500V sputtered film sensing element, including elastomer, and SiO is disposed with from bottom to top on the surface of elastomer2Insulate transition film layer, Si3N4Insulating film layer, NiCr strain resistors film layer, Si3N4Protection film layer and electrode film layer, Wheatstone bridge is replicated with strain resistor film layer.Film sensing element described in the utility model can improve the reliability and long-time stability of thin film sensor as the core devices of sputtered film sensor, meet high reliability and stability use requirement of the adverse circumstances such as space flight, Coal Mechanical to thin film sensor.
Description
Technical field
The utility model belongs to device for pressure measurement technical field, is related to a kind of high insulation resistance of resistance to 500V sputtered film quick
Sensing unit.
Background technology
The techniques such as the thin film sputtering in semiconductor technology, photoetching are introduced sensor manufacture and gone by sputtered thin film pressure transducer
Industry and a kind of new sensor technology produced are good with stability compared with other types of pressure sensor；In wide temperature
Wen Yi little in the range of area, can reliable and stable work, the advantages of measurement accuracy is high.In recent years, with film process technology increasingly
Maturation, diaphragm pressure sensor tentatively realizes batch production, and product is progressively applied to the neck such as space flight, Coal Mechanical, chemical industry
Domain, thus to the main performance index of sensor, such as insulating properties, stability, temperature performance, it was also proposed that higher requirement.
At present, thin film sensor product known in the market also there are that dielectric strength is relatively low (typically can be by the exhausted of 100V~200V
Edge voltage-withstand test) deficiency, and sputtered film sensing element is used as the core that strain is experienced in sputtered thin film pressure transducer
Element, the height of its dielectric strength constrains the application of highly reliable sputtered film sensor.In addition, prior art products are yet deposited
The problem of having reliability and long-time stability are poor, it is impossible to meet the adverse circumstances such as space flight, Coal Mechanical well to film
The high reliability and stability use requirement of sensor.
Utility model content
The purpose of this utility model is to solve problems of the prior art, quick in existing thin film sensor
Sensing unit can by the basis of resistance to 200V dielectric strengths there is provided a kind of high insulation resistance of resistance to 500V sputtered film sensing element,
The film sensing element can improve the reliability of thin film sensor and steady in a long-term as the core devices of sputtered film sensor
Property, meet high reliability and stability use requirement of the adverse circumstances such as space flight, Coal Mechanical to thin film sensor.
For realizing that the technical solution of the utility model purpose is as described below.
A kind of high insulation resistance of resistance to 500V sputtered film sensing element, including a stainless steel cover cylindrical elastomer,
The surface of elastomer is disposed with insulation transition film layer, insulating film layer, strain resistor film layer, protection film layer and electricity from bottom to top
Pole film layer, wherein, insulation transition film layer is the thickness being made up of ion beam sputter depositing technique at 250~300 nanometers
SiO2Material layer, insulating film layer be by PECVD depositing operation be made by Si3N4The gross thickness of composition is micro- 2.0~2.5
The film of rice, strain resistor film layer is the thickness being made up of ion beam sputter depositing and photoetching process at 250~300 nanometers
NiCr alloy planar resistor film layers, are replicated with Wheatstone bridge in strain resistor film layer, and protection film layer is by reactive ion
The thickness that beam sputter-deposition technique is made is 150~250 nanometers of Si3N4Material membrane, electrode film layer is the extraction in planar resistor
Ni/Au materials conductive films, its thickness are sequentially depositing using ion beam sputtering in surface pads NiCr alloy planar resistor film layers
For 450~500 nanometers.
In the above-mentioned high insulation resistance of resistance to 500V sputtered film sensing element, strain resistor film layer includes connection resistance bridge
Four strain resistors, they are into ring type structure, in the largest deformation area in surface of elastomer.
Compared with prior art, the utility model tool has the advantage that：
First, in the high insulation resistance of resistance to 500V sputtered film sensing element described in the utility model, insulating thin layer is adopted
Use ion beam sputtering SiO2Film and PECVD deposition Si3N4Two methods are combined, and composition is by SiO2/Si3N4Laminated film group
Into, the group and mode of the depositional mode and material, solve use the deposition efficiency existed during ion beam depositing dielectric film low with
And PECVD deposition Si3N4The problem of there is not fine and close enough membrane structure and big stress during film, improves the deposition effect of film
Rate and quality, so as to improve the dielectric strength of film；
2nd, in the utility model by the thickness of strain resistor film layer from 250~300nm is designed as, the thickness can reduce thin
The border of film and impurity effect, so as to improve film resistor stability；
3rd, the utility model deposits one layer of silicon nitride film using the method for ion beam sputtering, can prevented on strain figures
Only strain resistor film layer film by external environments such as ambient humidity, temperature because influenceed to cause the problem of dielectric strength is reduced to go out
It is existing；
4th, the utility model is sequentially depositing Ni/Au lead conducting films to pad film using ion beam sputtering, and thickness exists
Between 500nm, layer of Au film is deposited on Ni films, the Au thin film stabilities are good, are all difficult to be oxidized at ambient and elevated temperatures,
The solderability of pad can be improved, while preventing from causing its voltage endurance capability that insulate because of the damage of pad when carrying out voltage-withstand test
Reduction.
Test and detect through the utility model designer, the utility model is contrasted with existing sputtered film sensing element, its
Dielectric voltage endurance capability is significantly improved.Specific targets are as follows：Film sensing element can be by 1min 500V dielectrics
Voltage-withstand test, and thin film strain patterned surface not damaged.
Brief description of the drawings
Fig. 1 is the structural representation of a specific embodiment of the present utility model.
Fig. 2 is the strain figures design diagram of strain resistor film layer in the utility model and the mask plate exposed for the first time
Schematic diagram.
Fig. 3 is the mask plate schematic diagram of second and third time exposure.
Each numeral mark title is respectively in accompanying drawing：1- elastomers, 2- insulation transition film layers, 3- insulating film layers, 4-
Strain resistor film layer, 5- protection film layers, 6- electrode film layers.
Embodiment
The utility model content is described further below with reference to accompanying drawing, but actual fabrication structure of the present utility model
It is not limited in following embodiments.
Referring to accompanying drawing, the high insulation resistance of resistance to 500V sputtered film sensing element described in the utility model is by elastomer (base
Bottom) 1 and the assembly of thin films structure composition that is arranged on elastomer 1, wherein film structure is followed successively by SiO from bottom to top2Insulation
Transition film layer 2, Si3N4Insulating film layer 3, NiCr strain resistors film layer 4, Si3N4Protection film layer 5 and electrode film layer 6.Elastomer 1 is
One cover tubular pressure-bearing device by stainless steel material, for by the pressure transition born be surface of elastomer strain.Absolutely
Edge transition film layer 2 is to be deposited on SiO of the thickness of the upper surface of elastomer 1 at 300 nanometers by ion beam sputtering process2Material
Layer.Insulating film layer 3 is Si of the thickness at 2.0 microns being deposited on by PECVD depositing operation in insulation transition film layer 23N4's
Material layer.Strain resistor film layer 4 is deposited on insulating film layer 3 using ion beam sputtering method, is that a thickness is 300 nanometers
NiCr alloy planar resistor film layers, are replicated with Wheatstone bridge, four of connection resistance bridge should in strain resistor film layer 4
Become resistance (R1, R2, R3, R4) into ring type structure, in the largest deformation area in the surface of elastomer 1.Protection film layer 5 be using from
Beamlet sputtering method is deposited on Si of the thickness at 200 nanometers in strain resistor film layer 43N4Material membrane, can prevent the correspondence such as steam
The pollution of variation film, improves the stability of strain film.Electrode film layer 6 is the extraction surface pads NiCr alloys in planar resistor
Ni/Au materials conductive films are sequentially depositing using ion beam sputtering in planar resistor film layer, its thickness is 500 nanometers.
The preparation process of the utility model product：
1) sensibility elasticity body 1 is made, the surface preparation such as is ground, polishes, cleaning to the surface of elastomer 1；
2) SiO is prepared by ion beam sputtering on the surface of elastomer2Insulate transition film layer 2, then heavy by PECVD
Product Si3N4Insulating film layer 3；
3) NiCr strain resistors film layer 4 is deposited on insulating film layer 3 using the method for ion beam sputtering；
4) in the even positive photoresist in surface of NiCr strain resistors film layer 4, then with the mask plate shown in Fig. 2 pass through it is ultraviolet expose
Light, the strain figures of design is copied to the surface of NiCr strain resistors film layer 4；
5) using the method for ion beam etching, NiCr alloy-layers unnecessary beyond strain figures is etched away, design is left
Strain figures part, then the photoresist removed on strain figures, the mask completed are cleaned with absolute ethyl alcohol ultrasonic wave
Plate designs NiCr alloy strain figures；
6) surface of elastomer after etching, even positive photoresist is exposed using the mask plate shown in Fig. 3, then by aobvious
Shadow completes the presedimentary pad photoresist protection of diaphragm；
7) one layer of Si is deposited on the strain figures beyond pad using the method for ion beam sputtering3N4Protective film, is protected
After the completion of cuticular layer deposition, the photoresist removed on pad is cleaned by ultrasonic wave with absolute ethyl alcohol；
8) on the surface for having deposited protective film and having cleaned, even negative photoresist is exposed using the mask plate shown in Fig. 3
Light, then protected by the photoresist beyond the completion pad that develops；
9) Ni/Au leads are sequentially depositing in the extraction surface pads NiCr alloy planar resistor film layers of planar resistor conductive
Film, is made electrode film layer 6, and the photoresist cleaned with absolute ethyl alcohol by ultrasonic wave beyond removing is protected, and is finally completed resistance to
500V high insulation resistance sputtered films sensing element makes.
Claims (2)
1. a kind of high insulation resistance of resistance to 500V sputtered film sensing element, it is characterised in that：Including a stainless steel cover tubular
Elastomer (1), insulation transition film layer (2), insulating film layer (3), strain are disposed with the surface of elastomer (1) from bottom to top
Resistive layer (4), protection film layer (5) and electrode film layer (6), wherein, insulation transition film layer (2) is to pass through ion beam sputter depositing
SiO of the thickness that technique is made at 250~300 nanometers2Material layer, insulating film layer (3) of PECVD depositing operation by being made up
By Si3N4Film of the gross thickness of composition at 2.0~2.5 microns, strain resistor film layer (4) is to pass through ion beam sputter depositing
And NiCr alloy planar resistor film layer of the thickness that is made of photoetching process at 250~300 nanometers, in strain resistor film layer (4)
Wheatstone bridge is replicated with, protection film layer (5) is that the thickness being made up of Reactive ion-sputtering depositing operation is 150~250
The Si of nanometer3N4Material membrane, electrode film layer (6) is the extraction surface pads NiCr alloy planar resistor film layers (4) in planar resistor
Upper use ion beam sputtering is sequentially depositing Ni/Au materials conductive films, and its thickness is 450~500 nanometers.
2. the high insulation resistance of resistance to 500V sputtered film sensing element according to claim 1, it is characterised in that：The strain
Resistive layer (4) includes four strain resistors of connection resistance bridge, and they are into ring type structure, in elastomer (1) surface
Largest deformation area in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621384143.8U CN206362470U (en) | 2016-12-16 | 2016-12-16 | A kind of high insulation resistance of resistance to 500V sputtered film sensing element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621384143.8U CN206362470U (en) | 2016-12-16 | 2016-12-16 | A kind of high insulation resistance of resistance to 500V sputtered film sensing element |
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| CN206362470U true CN206362470U (en) | 2017-07-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238525A (en) * | 2018-08-28 | 2019-01-18 | 西安航天动力研究所 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
| CN110926692A (en) * | 2019-12-20 | 2020-03-27 | 中国电子科技集团公司第四十八研究所 | High-temperature particle scouring resistant pressure sensitive element, preparation method thereof and sputtering film pressure sensor |
| CN113061838A (en) * | 2021-03-18 | 2021-07-02 | 中北大学 | Thin film sensor and preparation method thereof |
-
2016
- 2016-12-16 CN CN201621384143.8U patent/CN206362470U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238525A (en) * | 2018-08-28 | 2019-01-18 | 西安航天动力研究所 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
| CN110926692A (en) * | 2019-12-20 | 2020-03-27 | 中国电子科技集团公司第四十八研究所 | High-temperature particle scouring resistant pressure sensitive element, preparation method thereof and sputtering film pressure sensor |
| CN110926692B (en) * | 2019-12-20 | 2021-09-17 | 中国电子科技集团公司第四十八研究所 | High-temperature particle scouring resistant pressure sensitive element, preparation method thereof and sputtering film pressure sensor |
| CN113061838A (en) * | 2021-03-18 | 2021-07-02 | 中北大学 | Thin film sensor and preparation method thereof |
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