CN206362468U - High sensitivity thin-film pressure sensor - Google Patents
High sensitivity thin-film pressure sensor Download PDFInfo
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- CN206362468U CN206362468U CN201621383853.9U CN201621383853U CN206362468U CN 206362468 U CN206362468 U CN 206362468U CN 201621383853 U CN201621383853 U CN 201621383853U CN 206362468 U CN206362468 U CN 206362468U
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- pressure sensor
- high sensitivity
- strain
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Abstract
The utility model is related to a kind of high sensitivity thin-film pressure sensor, the hollow housing equipped with pressure interface seat with a bottom, connector assembly is set with housing upper end, sensitive core body element and circuit board mount are provided with pressure interface seat top, the switching circuit board for replicating wheatstone bridge circuits is installed on assist side support, sensitive core body element includes sensibility elasticity body of the lower weld on pressure interface seat, dielectric film is disposed with sensibility elasticity body surface face, strain films, weld film and diaphragm, Wheatstone bridge is wherein replicated with strain films, switching circuit board is installed on circuit board mount, signal output part and connector assembly of the input and output end of switching circuit board respectively with Wheatstone bridge on sensitive core body element are connected.The utility model is strained due to being experienced using titanium oxynitrides film as strain films, is improved the sensitivity of pressure sensor, while also having the advantages that long-time stability are good, measurement temperature scope is wide.
Description
Technical field
The utility model belongs to strain transducer technical field, is related to a kind of high sensitivity thin-film pressure sensor.
Background technology
Known pressure sensor product is largely the sensor designed based on silicon piezoresistive principles in the market, and it is adopted
With semiconductor process technique, micro mechanical structure and circuit are integrated, it is low with small volume, light weight, low in energy consumption, cost
The advantages of, in whole MEMS industries, either design studies or industry application silicon piezoresistive transducer all occupy main status,
But the shortcoming of silicon piezoresistive transducer is exactly temperature in use narrow range (highest measurement temperature is 125 DEG C), it is impossible to be widely used in
The measurement of hot conditions.Diaphragm pressure sensor had been widely used in the various surveys including civilian and military in recent years
Amount field, the making of its sensing element uses advanced MEMS process technologies, makes sensor have dynamic response fast, steady in a long-term
The characteristics of property good, high temperature resistant (temperature of sputtered film sensor can reach 280 DEG C).But current this area is thin by sputtering
The sputtered film product sensor of membrane technology production is all to be only limitted to the requirement that sensitivity is (2 ± 0.5) mV/V, for highly sensitive
The sensor of the sputtered film principle of degree does not occur also so far.
Utility model content
The problem of the purpose of this utility model is to have prior art solves is based on sputter coating there is provided one kind
Principle can meet high sensitivity, wide-range scope and high temperature resistant requirement high sensitivity thin-film pressure sensor.
For realizing that the technical solution of the utility model purpose is as described below.
A kind of high sensitivity thin-film pressure sensor, the hollow housing equipped with pressure interface seat with a bottom, in shell
Body upper end is set with the end cap with connector assembly, and a sensitive core body element and a wiring board are provided with pressure interface seat top
Support, described sensitive core body element includes stainless steel sensibility elasticity body of the lower weld on pressure interface seat,
Sensibility elasticity body surface face is disposed with dielectric film, strain films, welding film and diaphragm from bottom to top, wherein multiple on strain films
Be formed with wheatstone bridge circuits, described circuit board mount and switching circuit board be installed, the input of switching circuit board with it is quick
Feel the signal output part connection of Wheatstone bridge in core element, the output end of switching circuit board is connected to by wire patches group
Part.
In above-mentioned high sensitivity thin-film pressure sensor, dielectric film is the resistant to elevated temperatures oxygen prepared using magnetically controlled sputter method
Change aluminium film, the thickness of the dielectric film is 2 microns.
In above-mentioned high sensitivity thin-film pressure sensor, strain films are the titanium oxynitrides generated using Reactive ion-sputtering
Film, copies to strain films surface, the thickness of strain films is 200 nanometers by Wheatstone bridge by photoetching process.
In above-mentioned high sensitivity thin-film pressure sensor, welding film is pure nickel film prepared by ion beam sputtering, welds film
Thickness be 500 nanometers.
In above-mentioned high sensitivity thin-film pressure sensor, diaphragm is silicon nitride film prepared by ion beam sputtering, protection
The thickness of film is 100 nanometers.
In above-mentioned high sensitivity thin-film pressure sensor, the strain resistor of Wheatstone bridge annularly divides on switching circuit board
Cloth and positioned at sensitive core body element sensibility elasticity body maximum strain area, resistance value be 5000 Ω.
Compared with prior art, the utility model has the advantage that as described below with technique effect.
First, the sensibility elasticity of stainless steel material is employed in high sensitivity thin-film pressure sensor described in the utility model
Body, is deformed when the impression of elastomer compression face is by measuring pressure, the mechanical signal of strain is converted into electricity eventually through film
Signal, stainless steel elastomer is welded as a whole with pressure interface seat, sensor can be made to use in the presence of a harsh environment, thus this reality
There is preferable high temperature resistant, corrosion resistant feature with new.
2nd, in high sensitivity thin-film pressure sensor described in the utility model, oxygen is prepared using the method for magnetron sputtering
Change aluminium insulating film layer, strain film is prepared using ion beam sputtering technology, strain film layer is the titanium oxynitrides with piezoresistive effect
Film, strain films, because piezoresistive effect can make the resistivity of strain films change a lot, enter in the case where being under pressure
And resistance is changed, therefore also make this diaphragm pressure sensor have higher sensitivity (sensitivity brings up to 7mV/
V), additionally, due to film is prepared using ion beam sputtering process, sensor is made simultaneously also with long-time stability are good, measurement temperature
The wide advantage of scope.
3rd, after the utility model is using stainless steel elastomer processing grinding and polishing, the requirement of wide-range scope can be met, is adopted
Realize that strain films are combined with the atom of dielectric film with sputtering technology, by the vacuum heat treatment process of certain temperature, with sensing
The temperature drift coefficient of device is small, good uniformity and the features such as good sensor croop property.
Test and detect through the utility model designer, the utility model is contrasted with conventional known diaphragm pressure sensing, its
Sensitivity is significantly improved.Specific sensor output sensitivity is 7mV/V, and temperature drift coefficient is better than 0.005%F.S/ DEG C.
Brief description of the drawings
Fig. 1 is the structural representation of a specific embodiment of the present utility model.
Fig. 2 is the film structure schematic diagram of sensitive core body element in the utility model.
Fig. 3 is sensibility elasticity body surface face strain resistor schematic diagram in the utility model.
The title of each numeral mark is as follows in figure：1- pressure interfaces seat；2- switching circuit boards；3- sensitive core body elements,
31- sensibility elasticity bodies, 32- dielectric films, 33- strain films, 34- welding films, 35- diaphragms；4- housings；5- patches group
Part.
Embodiment
The utility model content is described further below with reference to accompanying drawing, but actual fabrication structure of the present utility model
It is not limited in following embodiments.
Referring to accompanying drawing, high sensitivity thin-film pressure sensor described in the utility model is by pressure interface seat 1, built-up circuit
The components such as plate 2, sensitive core body element 3, housing 4, housing end plug, connector 5, circuit board mount are constituted.Pressure interface seat 1 is mounted in
The bottom of housing 4, the end cap with connector assembly 5 is sleeved on the upper end of housing 4.Sensitive core body element 3 and circuit board mount are respectively provided with
On the top of housing cavity pressure interface block 1, wheatstone bridge circuits, assist side branch are replicated in sensitive core body element 3
Switching circuit board 2, the input and the letter of wheatstone bridge circuits in sensitive core body element 3 of switching circuit board 2 are installed on frame
Number output end connection, the output end of switching circuit board 2 is connected to connector assembly 5 by wire.During production, using laser beam
Pressure interface seat 1 is welded as a whole with sensitive core body element 3, transit line plate 2 is installed on assist side support, then use glue
Circuit board mount is fixed on pressure interface seat 1, Wheatstone bridge is drawn out on transit line plate 2 by ultrasonic bonding,
Sensitive core body element 3 and transit line plate 2 are encapsulated with housing 4, and connector 5 is connected by wire.
The film structure of sensitive core body element 3 is as shown in Fig. 2 it has a lower weld in pressure in the utility model
Stainless steel sensibility elasticity body 31 on interface block 1, be disposed with from bottom to top on the surface of sensibility elasticity body 31 dielectric film 32,
Strain films 33, welding film 34 and diaphragm 35.Dielectric film 32 is to prepare aluminum oxide film layer, the thickness of film using the method for magnetron sputtering
Spend for 2 microns.Strain films 33 are the titanium oxynitrides film generated using Reactive ion-sputtering, and Wheatstone bridge is passed through into photoetching
Technique copies to the surface of strain films 33, and the thickness of film is 200 nanometers.It is pure nickel film prepared by ion beam sputtering to weld film 34,
The thickness of film is 500 nanometers.Diaphragm 35 is silicon nitride film prepared by ion beam sputtering, and the thickness of film is 100 nanometers.
The utility model completes strain resistor figure after strain film completes by mask and ion beam etch process
Shape is made, as shown in Figure 3.Resistance is respectively positioned on the largest deformation area of sensibility elasticity body 31.
It is to the making step of sensitive core body element 3：The sensitive bullet of stainless steel that will require to process according to range first
Property body 31 carry out surface preparation polishing, cleaning, it is redeposited afterwards in the first depositing insulating films 32 in the surface of sensibility elasticity body 31
Strain films 33, after the preparation for completing dielectric film 32 and strain films 33, uniformly coat one layer of positive photoresist, by favour in film surface
Stone electric bridge is copied to after the surface of strain films 33, developing fixing by ion beam etch process by photoetching process by favour stone
Electric bridge completely etch, it is secondary to apply the preparation that positive photoresist completes welding film 34 by photoetching process and coating process,
Third time applies the preparation that positive photoresist completes diaphragm 35 with above-mentioned technique, plays the purpose of passivation protection electric bridge；Sensitive core
After volume elements part 3 completes, the sensibility elasticity body 31 completed after diaphragm 35 is positioned in vacuum annealing furnace and proceeded through very
Empty Technology for Heating Processing, vacuum is less than 5.0 × 10-3, and heat treatment temperature is 750 DEG C, and the retention time is 3h.
Claims (6)
1. a kind of high sensitivity thin-film pressure sensor, it is characterised in that：With a bottom equipped with pressure interface seat (1)
Empty capsid (4), the end cap with connector assembly (5) is set with housing (4) upper end, and one is provided with pressure interface seat (1) top
Sensitive core body element (3) and a circuit board mount, described sensitive core body element (3) connect including a lower weld in pressure
Stainless steel sensibility elasticity body (31) on mouth seat (1), insulation is disposed with sensibility elasticity body (31) surface from bottom to top
Film (32), strain films (33), welding film (34) and diaphragm (35), wherein being replicated with Wheatstone bridge electricity on strain films (33)
Switching circuit board (2), input and the sensitive core body element of switching circuit board (2) are installed on road, described circuit board mount
(3) the signal output part connection of Wheatstone bridge on, the output end of switching circuit board (2) is connected to connector assembly by wire
(5)。
2. high sensitivity thin-film pressure sensor according to claim 1, it is characterised in that：Described dielectric film (32) is
The resistant to elevated temperatures aluminum oxide film prepared using magnetically controlled sputter method, the thickness of dielectric film (32) is 2 microns.
3. high sensitivity thin-film pressure sensor according to claim 1, it is characterised in that：Described strain films (33) are
The titanium oxynitrides film generated using Reactive ion-sputtering, strain films (33) are copied to by Wheatstone bridge by photoetching process
Surface, the thickness of strain films (33) is 200 nanometers.
4. high sensitivity thin-film pressure sensor according to claim 1, it is characterised in that：Described welding film (34) is
Pure nickel film prepared by ion beam sputtering, the thickness of welding film (34) is 500 nanometers.
5. high sensitivity thin-film pressure sensor according to claim 1, it is characterised in that：Described diaphragm (35) is
Silicon nitride film prepared by ion beam sputtering, the thickness of diaphragm (35) is 100 nanometers.
6. high sensitivity thin-film pressure sensor according to claim 1, it is characterised in that：Favour on switching circuit board (2)
The strain resistor of stone electric bridge is annularly distributed and located at the maximum strain area of the sensibility elasticity body of sensitive core body element (3), electricity
Resistance is 5000 Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621383853.9U CN206362468U (en) | 2016-12-16 | 2016-12-16 | High sensitivity thin-film pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621383853.9U CN206362468U (en) | 2016-12-16 | 2016-12-16 | High sensitivity thin-film pressure sensor |
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| Publication Number | Publication Date |
|---|---|
| CN206362468U true CN206362468U (en) | 2017-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621383853.9U Active CN206362468U (en) | 2016-12-16 | 2016-12-16 | High sensitivity thin-film pressure sensor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108801515A (en) * | 2018-05-30 | 2018-11-13 | 中国电子科技集团公司第四十八研究所 | A kind of TiON diaphragm pressure sensors and preparation method thereof |
| CN109994596A (en) * | 2017-12-30 | 2019-07-09 | 湖南启泰传感科技有限公司 | A kind of high-performance wide-range band temperature sensitive type film chip varistor |
| CN110319956A (en) * | 2019-05-13 | 2019-10-11 | 西人马联合测控（泉州）科技有限公司 | The manufacturing method of sensor and sensor |
| CN111141430A (en) * | 2019-12-23 | 2020-05-12 | 陕西电器研究所 | Film core body sealing assembly in sputtering film pressure sensor and preparation thereof |
| CN112484631A (en) * | 2020-12-09 | 2021-03-12 | 湖南启泰传感科技有限公司 | Film pressure sensor and layout method thereof |
| CN113432764A (en) * | 2021-06-23 | 2021-09-24 | 广州市智芯禾科技有限责任公司 | Three-redundancy film pressure sensor |
| CN116222652A (en) * | 2022-12-26 | 2023-06-06 | 松诺盟科技有限公司 | Nanometer film core and composite sensor |
-
2016
- 2016-12-16 CN CN201621383853.9U patent/CN206362468U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994596A (en) * | 2017-12-30 | 2019-07-09 | 湖南启泰传感科技有限公司 | A kind of high-performance wide-range band temperature sensitive type film chip varistor |
| CN108801515A (en) * | 2018-05-30 | 2018-11-13 | 中国电子科技集团公司第四十八研究所 | A kind of TiON diaphragm pressure sensors and preparation method thereof |
| CN110319956A (en) * | 2019-05-13 | 2019-10-11 | 西人马联合测控（泉州）科技有限公司 | The manufacturing method of sensor and sensor |
| CN110319956B (en) * | 2019-05-13 | 2021-09-03 | 西人马联合测控（泉州）科技有限公司 | Sensor and method for manufacturing sensor |
| CN111141430A (en) * | 2019-12-23 | 2020-05-12 | 陕西电器研究所 | Film core body sealing assembly in sputtering film pressure sensor and preparation thereof |
| CN112484631A (en) * | 2020-12-09 | 2021-03-12 | 湖南启泰传感科技有限公司 | Film pressure sensor and layout method thereof |
| CN113432764A (en) * | 2021-06-23 | 2021-09-24 | 广州市智芯禾科技有限责任公司 | Three-redundancy film pressure sensor |
| CN116222652A (en) * | 2022-12-26 | 2023-06-06 | 松诺盟科技有限公司 | Nanometer film core and composite sensor |
| CN116222652B (en) * | 2022-12-26 | 2023-12-15 | 松诺盟科技有限公司 | Nanometer film core and composite sensor |
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