CN206340552U - A kind of low-temperature-rise high-air-tightness Schottky diode - Google Patents
A kind of low-temperature-rise high-air-tightness Schottky diode Download PDFInfo
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- CN206340552U CN206340552U CN201621402132.8U CN201621402132U CN206340552U CN 206340552 U CN206340552 U CN 206340552U CN 201621402132 U CN201621402132 U CN 201621402132U CN 206340552 U CN206340552 U CN 206340552U
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- schottky diode
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Abstract
The utility model discloses a kind of structure of low-temperature-rise high-air-tightness Schottky diode；The Schottky diode has cushion and drift layer two-layer epitaxial structure, there is the advantage of low forward saturation voltage drop low-temperature-rise under same homalographic compared with conventional schottky, simultaneously passivation layer is introduced in terminal, compared with conventional schottky compared to air-tightness after encapsulation more preferably, the stability that Schottky diode works in hot and humid environment is improved.
Description
Technical field
The utility model is mainly concerned with Schottky diode, more particularly to a kind of pole of low-temperature-rise high-air-tightness Schottky two
Tubular construction.
Background technology
Schottky diode is widely used in DC-to-dc converter, AC power source adapter and charger field in recent years
Come, with the thickness more and more thinner of consumer electronics product, it is desirable to which corresponding Schottky diode also wants less and less and low temperature
Rise low-power consumption, while also require that Schottky diode air-tightness is high, can in hot and humid environment steady operation.This practicality is new
The type impurity concentration cushion high by introducing, the conducting resistance of the Schottky diode reduced is so as to reduce positive pressure
Drop, forward voltage drop reduces corresponding Schottky diode temperature rise and also decreased；When Schottky diode plus reversed bias voltage, delay
Rush layer and when drift layer undertakes reverse BV, electric-field intensity can be slowed down or change compared with conventional Schottky diode
Decline, but do not change the maximum of electric-field intensity in whole device depletion layer place and remain as situation near barrier layer, it is rational slow
Rushing layer and drift layer design can ensure that Schottky diode has specified working inverse voltage to have low forward voltage drop again.
The silicon nitride of heat-resistant anticorrosion of high-k is introduced in terminal oxide layer and anode metal edge in addition as passivation layer,
It can ensure that the heat endurance of Schottky diode is good, moisture-proof is strong, device air tightness is high.
The content of the invention
Schottky diode part of the present utility model has low-temperature-rise high-air-tightness, simultaneous with traditional Schottky Making programme
Hold increase work step easily to realize less.
The utility model provides a kind of low-temperature-rise high-air-tightness Schottky diode structure, it is characterised in that：Two-layer epitaxial,
Pass through epitaxial growth regime formation cushion and drift layer on N+ substrates；Terminal passivating layer, in terminal oxide layer and anode gold
The silicon nitride of the category high heat-resistant anticorrosion of edges cover dielectric constant is used as passivation layer.
The characteristics of the utility model is N+ Grown two-layer epitaxial structures, is effectively reduced by reducing conduction voltage drop
Temperature rise when Schottky diode works, reduces energy consumption raising efficiency.Introduced simultaneously in terminal oxide layer and anode metal edge
Silicon nitride passivation, can lift the air-tightness after Schottky diode encapsulation, it is ensured that Schottky diode is in hot and humid ring
The work that can stablize in border, lifts service life.
Brief description of the drawings
Fig. 1 is a kind of low-temperature-rise high-air-tightness Schottky diode structure figure of the utility model,
1. N+ substrate layers；
2. cushion；
3. drift layer；
4. p-type protection ring；
5. terminal oxide layer；
6. barrier layer；
7. anode electrode；
8. terminal passivating layer；
9. cathode electrode.
Embodiment
Fig. 1 shows a kind of low-temperature-rise high-air-tightness Schottky diode structure schematic diagram of the utility model, with reference to
Fig. 1 illustrates a kind of low-temperature-rise high-air-tightness Schottky diode manufacturing process.
Procedure for processing is as follows：
A, on N+ substrates cushion and drift layer are formed by epitaxial growth mode；
B, oxide layer is grown on drift layer, by first time photoetching, burn into doping, knot formation p-type protection ring and end
Hold oxide layer；
C, by second of photoetching, corrosion, Metal deposition, alloy formation barrier layer；
D, anode metal layer evaporation, anode electrode is formed after third time photoetching, corrosion；
E, passivation layer deposit, form terminal passivating layer by four mask, after corrosion；
F, N+ substrate bottom are thinned, then carry out cathode metal layer and be deposited with to form cathode electrode, and device architecture is formed.
By embodiments described above illustrating the utility model, while can also realize that this practicality is new using other embodiments
Type.
The utility model is not limited to above-mentioned specific embodiment, therefore the utility model is limited by scope
It is fixed.
Claims (1)
1. a kind of Schottky diode structure, it is characterised in that：Two-layer epitaxial, is formed on N+ substrates by epitaxial growth regime
Cushion and drift layer；Terminal passivating layer, in the passivation layer of terminal oxide layer and anode metal edges cover nitrogenate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621402132.8U CN206340552U (en) | 2016-12-20 | 2016-12-20 | A kind of low-temperature-rise high-air-tightness Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621402132.8U CN206340552U (en) | 2016-12-20 | 2016-12-20 | A kind of low-temperature-rise high-air-tightness Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206340552U true CN206340552U (en) | 2017-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621402132.8U Active CN206340552U (en) | 2016-12-20 | 2016-12-20 | A kind of low-temperature-rise high-air-tightness Schottky diode |
Country Status (1)
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| CN (1) | CN206340552U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326568A (en) * | 2018-09-19 | 2019-02-12 | 吉林麦吉柯半导体有限公司 | A kind of Schottky diode and production method |
-
2016
- 2016-12-20 CN CN201621402132.8U patent/CN206340552U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326568A (en) * | 2018-09-19 | 2019-02-12 | 吉林麦吉柯半导体有限公司 | A kind of Schottky diode and production method |
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