CN207517703U - A kind of Ohmic contact and the super barrier rectifier of Schottky contacts - Google Patents
A kind of Ohmic contact and the super barrier rectifier of Schottky contacts Download PDFInfo
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- CN207517703U CN207517703U CN201721207225.XU CN201721207225U CN207517703U CN 207517703 U CN207517703 U CN 207517703U CN 201721207225 U CN201721207225 U CN 201721207225U CN 207517703 U CN207517703 U CN 207517703U
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- 230000004888 barrier function Effects 0.000 title claims abstract description 29
- 210000000746 body region Anatomy 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000000873 masking effect Effects 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005457 optimization Methods 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 description 11
- 238000000407 epitaxy Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a kind of Ohmic contacts and the super barrier rectifier of Schottky contacts, it is characterised in that：Including lower electrode layer, the first conductivity type substrate of heavy doping layer, the first conductive type epitaxial layer, the second conductivity type body region, Schottky contact region, gate dielectric layer, gate electrode layer, masking dielectric layer, ohmic contact regions and upper electrode layer is lightly doped.The Ohmic contact and the super barrier rectifier of Schottky contacts have the characteristics that simple manufacturing process, optimization electrical property feature and tolerance conveyance capacity.
Description
Technical field
The utility model is related to power semiconductor power electronic devices technical field, specifically a kind of Ohmic contact and Xiao Te
Base contacts super barrier rectifier.
Background technology
Power semiconductor rectifier, is widely used in power converter and power supply.Conventional super barrier rectifier, in sun
Rectifier diode in parallel and MOS transistor are integrated between pole and cathode come formed have compared with low conduction voltage drop, rationally leak electricity water
The rectifying device of flat, more stable high-temperature behavior, has apparent competitive advantage in the application of below 100V.
Structure and corresponding manufacturing method there are many typical super barrier rectifiers in the prior art, but its device architecture
It is relatively complicated with manufacturing process.
The super barrier rectifier of Schottky contacts proposed in the prior art, manufacturing method is simple, and can pass through
Schottky contacts and super potential barrier two ways adjust the optimization relationship between forward current ducting capacity and reverse leakage level.
But Conventional Schottky contacts super barrier rectifier and individual event conduction mode is still operated in high current density, this
Sample, high current condition will lead to very big forward voltage drop, therefore Conventional Schottky contacts the overcurrent energy of super barrier rectifier
Power is weaker.
Utility model content
The purpose of this utility model is to solve problems of the prior art, provides a kind of Ohmic contact and schottky junctions
Touch super barrier rectifier.
To realize the utility model aim the technical solution adopted is that such, a kind of Ohmic contact and Schottky contacts
Super barrier rectifier, which is characterized in that including lower electrode layer, the first conductivity type substrate of heavy doping layer, be lightly doped first and lead
Electric type epitaxial layer, the second conductivity type body region, Schottky contact region, gate dielectric layer, gate electrode layer, masking dielectric layer, ohm
Contact zone and upper electrode layer.
The first conductivity type substrate of heavy doping layer is covered on lower electrode layer.
First conductive type epitaxial layer that is lightly doped is covered on heavy doping the first conductivity type substrate layer.
Second conductivity type body region is covered in the part surface being lightly doped on the first conductive type epitaxial layer.
The ohmic contact regions are covered in the part surface on the second conductivity type body region.
The Schottky contact region is covered in the part surface on the second conductivity type body region.
The gate dielectric layer is covered in the part surface being lightly doped on the first conductive type epitaxial layer and the second conductive-type
Part surface on Xing Ti areas.The gate dielectric layer is also covered on Schottky contact region.
The gate electrode layer is covered on gate dielectric layer.
The masking dielectric layer is covered on gate electrode layer.
The upper electrode layer is covered on masking dielectric layer and ohmic contact regions, the upper electrode layer and Schottky contacts
Area is connected.
Further, the second conduction type protection ring and knot termination environment, the second conduction type protection ring and knot are further included
Termination environment is the loop configuration of closed form.The intermediate region that the loop configuration is surrounded is active area.
Further, second conductivity type body region is made of the structural unit that one or more repeats.Described second leads
Electric type body region is located in active area portion, positioned at structural unit and the second conduction type protection ring and the knot of active-surface
Termination environment can contact, and can not also contact.
Further, the material of the gate dielectric layer and masking dielectric layer includes earth silicon material and silicon oxynitride.It is described
The material of gate electrode layer includes DOPOS doped polycrystalline silicon.
Further, first conductive type epitaxial layer that is lightly doped can include enhancement layer structure.
Having the technical effect that for the utility model is unquestionable, and the utility model has the following advantages：
1) the utility model increases Ohmic contact design so that new construction device in the structure for keeping Schottky contacts
Have the fusion characteristics of Schottky and P-i-N structures.
2) at the lower voltage, Schottky contacts and super potential barrier play forward conduction characteristic main make to the utility model
With in larger current, the conductivity modulation effect caused by ohmic contact regions plays a major role to forward conduction characteristic, greatly
Forward conduction voltage is reduced, the tolerance conveyance capacity of new construction device is significantly improved.
3) the utility model also has the advantages that manufacturing process simply and facilitates application.
Description of the drawings
Fig. 1 is 1 cross-sectional view of new device of the utility model embodiment；
Fig. 2 is 2 cross-sectional view of new device of the utility model embodiment.
In figure：The first conductivity type substrate of heavy doping layer 20, the first conductive type epitaxial layer is lightly doped in lower electrode layer 10
30th, the second conductivity type body region 31, the first conduction type enhancement layer 32, Schottky contact region 40, gate dielectric layer 41, gate electrode layer
42nd, dielectric layer 43, ohmic contact regions 44 and upper electrode layer 50 are sheltered.
Specific embodiment
With reference to embodiment, the utility model is described in further detail, but should not be construed the above-mentioned master of the utility model
Topic range is only limitted to following embodiments.It is common according to this field in the case where not departing from the above-mentioned technological thought of the utility model
Technological know-how and customary means make various replacements and change, should all include within the protection scope of the present utility model.
Embodiment 1：
As shown in Figure 1, a kind of Ohmic contact and the super barrier rectifier of Schottky contacts, which is characterized in that including lower electricity
The first conductivity type substrate of heavy doping layer 20, the first conductive type epitaxial layer 30, the second conductivity type body region is lightly doped in pole layer 10
31st, Schottky contact region 40, gate dielectric layer 41, gate electrode layer 42, masking dielectric layer 43, ohmic contact regions 44 and upper electrode layer
50。
The first conductivity type substrate of heavy doping layer 20 is covered on lower electrode layer 10.
First conductive type epitaxial layer 30 that is lightly doped is covered on the first conductivity type substrate of heavy doping layer 20.
Second conductivity type body region 31 is covered in the part surface being lightly doped on the first conductive type epitaxial layer 30.
The ohmic contact regions 44 are covered in the part surface on the second conductivity type body region 31.
The Schottky contact region 40 is covered in the part surface on the second conductivity type body region 31.
The gate dielectric layer 41 is covered in the part surface being lightly doped on the first conductive type epitaxial layer 30 and second and leads
Part surface on electric type body region 31.The gate dielectric layer 41 is also covered on Schottky contact region 40.
The gate electrode layer 42 is covered on gate dielectric layer 41.
The masking dielectric layer 43 is covered on gate electrode layer 42.
The upper electrode layer 50 is covered on masking dielectric layer 43 and ohmic contact regions 44, the upper electrode layer 50 and Xiao
Special base contact zone 40 is connected.
A kind of Ohmic contact and the super barrier rectifier of Schottky contacts further include the second conduction type protection ring and knot eventually
Petiolarea, the second conduction type protection ring and knot termination environment are the loop configuration of closed form.During the loop configuration is surrounded
Between region be active area.
Second conductivity type body region 31 is made of the structural unit that one or more repeats.Second conduction type
Body area 31 is located in active area portion, positioned at structural unit and the second conduction type protection ring and the knot terminal of active-surface
Area can contact, and can not also contact.
The material of the gate dielectric layer 41 and masking dielectric layer 43 includes earth silicon material and silicon oxynitride.The grid electricity
The material of pole layer 42 includes DOPOS doped polycrystalline silicon.
Embodiment 2：
As shown in Fig. 2, a kind of Ohmic contact and the super barrier rectifier of Schottky contacts, it is characterised in that：Including lower electricity
The first conductivity type substrate of heavy doping layer 20, the first conductive type epitaxial layer 30, the second conductivity type body region is lightly doped in pole layer 10
31st, the first conduction type enhancement layer 32, Schottky contact region 40, gate dielectric layer 41, gate electrode layer 42, masking dielectric layer 43, Europe
Nurse contact zone 44 and upper electrode layer 50.
The first conductivity type substrate of heavy doping layer 20 is covered on lower electrode layer 10；
First conductive type epitaxial layer 30 that is lightly doped is covered on the first conductivity type substrate of heavy doping layer 20；
Second conductivity type body region 31 is covered in the part surface being lightly doped on the first conductive type epitaxial layer 30；
First conduction type enhancement layer, 32 floating is being lightly doped inside the first conductive type epitaxial layer 30, and be distributed in
Between the repetitive unit of second conductivity type body region 31.
The Schottky contact region 40 is covered in the part surface on the second conductivity type body region 31；
The gate dielectric layer 41 is covered in the part surface being lightly doped on the first conductive type epitaxial layer 30 and second and leads
Part surface on electric type body region 31；The gate dielectric layer 41 is also covered on Schottky contact region 40；
The gate electrode layer 42 is covered on gate dielectric layer 41；
The masking dielectric layer 43 is covered on gate electrode layer 42；
The ohmic contact regions 44 are covered in the part surface on the second conductivity type body region 31；
The upper electrode layer 50 is covered on masking dielectric layer 43 and ohmic contact regions 44；The upper electrode layer 50 and Xiao
Special base contact zone 40 is connected.
A kind of Ohmic contact and the super barrier rectifier of Schottky contacts, further include the second conduction type protection ring and
Knot termination environment, the second conduction type protection ring and knot termination environment are the loop configuration of closed form；The middle area that annular is surrounded
Domain is active area.
A kind of Ohmic contact and the super barrier rectifier of Schottky contacts, the second conductivity type body region 31 by one or
The structural unit of the multiple repetitions of person is formed；Second conductivity type body region 31 is located in active area portion, positioned at active-surface
Structural unit can be contacted with the second conduction type protection ring and knot termination environment, can not also contact.
A kind of Ohmic contact and the super barrier rectifier of Schottky contacts, gate dielectric layer 41 and masking dielectric layer 43
Material mainly includes earth silicon material and silicon oxynitride；The material of the gate electrode layer 42 mainly includes DOPOS doped polycrystalline silicon.
Embodiment 3：
The first conduction type is selected as N-type, the second conduction type is p-type.
As shown in Figure 1, a kind of Ohmic contact and the super barrier rectifier of Schottky contacts, it is characterised in that：Including lower electricity
Pole floor 10, N+ types substrate layer 20, N-type epitaxy layer 30, PXing Ti areas 31, Schottky contact region 40, gate dielectric layer 41, gate electrode layer
42nd, dielectric layer 43, ohmic contact regions 44 and upper electrode layer 50 are sheltered.
The super barrier rectifier of the coupling Ohmic contact and Schottky contacts, further includes p-type protection ring and knot terminal
Area, the p-type protection ring and knot termination environment are the loop configuration of closed form；The intermediate region that annular is surrounded is active area.
The N+ types substrate layer 20 is covered on lower electrode layer 10.
The N-type epitaxy layer 30 is covered on N+ types substrate layer 20.The N+ types substrate layer 20 is doping concentration 19 times
Arsenic substrate more than side.The N-type epitaxy layer 30 is the phosphorus epitaxial layer of 15 to 16 power of impurity concentration, outside a typical N-type
4.5 microns of thickness, the phosphorus impurities concentration of 15 powers can be selected by prolonging 30 condition of layer, and the device thus produced can reach 40
Breakdown requirement more than volt.
The PXing Ti areas 31 are made of, and all repetitive units are respectively positioned on one or more structural unit repeated
In active area, the structural unit positioned at active-surface can be contacted with the second conduction type protection ring and knot termination environment,
It can not also contact.The mode of short annealing after the PXing Ti areas 31 use dosage as the boron injection of 13 powers, energy 80KeV
It is formed.
The gate dielectric layer 41 is covered in the part surface on N-type epitaxy layer 30 and the part table on PXing Ti areas 31
Face；Gate dielectric material selects silica.
The gate electrode layer 42 is doped polycrystalline layer, is covered on gate dielectric layer 41.
The masking dielectric layer 43 selects silica, is covered on gate electrode layer 42；
The Schottky contact region 40 is covered in the part surface on PXing Ti areas 31；Schottky contact region 40 selects titanium
Silicon alloy material or platinum silicon alloy material.The gate dielectric layer 41 is also covered in the part table on Schottky contact region 40
Face, that is to say, that Schottky contact region 40 extends to the subregion under gate dielectric layer 41.
The ohmic contact regions 44 are covered in the part surface on the second conductivity type body region 31；It selects ohmic contact regions 44
It is selected as P+ areas；
The upper electrode layer 50 is covered in masking dielectric layer 43 and ohmic contact regions 44, and with 40 phase of Schottky contact region
Even.
The Ohmic contact and the super barrier rectifier of Schottky contacts, breakdown voltage can reach 50 volts of requirement.
It keeps increasing Ohmic contact design in the structure of Schottky contacts so that new construction device has Schottky and P-i-N knots
The fusion characteristics of structure.At the lower voltage, Schottky contacts and super potential barrier play a major role to forward conduction characteristic, larger
During electric current, the conductivity modulation effect caused by ohmic contact regions plays a major role to forward conduction characteristic, is greatly reduced just
To conducting voltage, the tolerance conveyance capacity of new construction device is significantly improved.The Ohmic contact and the super gesture of Schottky contacts
Building rectifier also has the advantages that manufacturing process simply and facilitates application.
Embodiment 4：
The first conduction type is selected as N-type, the second conduction type is p-type.
As shown in Fig. 2, a kind of Ohmic contact and the super barrier rectifier of Schottky contacts, it is characterised in that：Including lower electricity
Pole floor 10, N+ types substrate layer 20, N-type epitaxy layer 30, PXing Ti areas 31, N-type enhancement layer 32, Schottky contact region 40, gate dielectric layer
41st, gate electrode layer 42, masking dielectric layer 43, ohmic contact regions 44 and upper electrode layer 50.
The super barrier rectifier of the coupling Ohmic contact and Schottky contacts, further includes p-type protection ring and knot terminal
Area, the p-type protection ring and knot termination environment are the loop configuration of closed form；The intermediate region that annular is surrounded is active area.
The N+ types substrate layer 20 is covered on lower electrode layer 10.
The N-type epitaxy layer 30 is covered on N+ types substrate layer 20.The N+ types substrate layer 20 is doping concentration 19 times
Arsenic substrate more than side.The N-type epitaxy layer 30 is the phosphorus epitaxial layer of 15 to 16 power of impurity concentration, outside a typical N-type
4.5 microns of thickness, the phosphorus impurities concentration of 15 powers can be selected by prolonging 30 condition of layer, and the device thus produced can reach 40
Breakdown requirement more than volt.
The PXing Ti areas 31 are made of, and all repetitive units are respectively positioned on one or more structural unit repeated
In active area, the structural unit positioned at active-surface can be contacted with the second conduction type protection ring and knot termination environment,
It can not also contact.The mode of short annealing after the PXing Ti areas 31 use dosage as the boron injection of 13 powers, energy 80KeV
It is formed.
32 floating of N-type enhancement layer is being lightly doped inside the first conductive type epitaxial layer 30, and is distributed in the second conduction
Between the repetitive unit of type body region 31.The process conditions selected are fast after arsenic injection that dosage is 12 powers, energy 100KeV
Fast annealing.
The gate dielectric layer 41 is covered in the part surface on N-type epitaxy layer 30 and the part table on PXing Ti areas 31
Face；Gate dielectric material selects silica.
The gate electrode layer 42 is doped polycrystalline layer, is covered on gate dielectric layer 41.
The masking dielectric layer 43 selects silica, is covered on gate electrode layer 42；
The Schottky contact region 40 is covered in the part surface on PXing Ti areas 31；Schottky contact region 40 selects titanium
Silicon alloy material or platinum silicon alloy material.The gate dielectric layer 41 is also covered in the part table on Schottky contact region 40
Face, that is to say, that Schottky contact region 40 extends to the subregion under gate dielectric layer 41.
The ohmic contact regions 44 are covered in the part surface on the second conductivity type body region 31；It selects ohmic contact regions 44
It is selected as P+ areas；
The upper electrode layer 50 is covered in masking dielectric layer 43 and ohmic contact regions 44, and with 40 phase of Schottky contact region
Even.
The Ohmic contact and the super barrier rectifier of Schottky contacts, breakdown voltage can reach 50 volts of requirement.
It keeps increasing Ohmic contact design in the structure of Schottky contacts so that new construction device has Schottky and P-i-N knots
The fusion characteristics of structure.At the lower voltage, Schottky contacts and super potential barrier play a major role to forward conduction characteristic, larger
During electric current, the conductivity modulation effect caused by ohmic contact regions plays a major role to forward conduction characteristic, is greatly reduced just
To conducting voltage, the tolerance conveyance capacity of new construction device is significantly improved.The Ohmic contact and the super gesture of Schottky contacts
Building rectifier also has the advantages that manufacturing process simply and facilitates application.
Claims (5)
1. a kind of Ohmic contact and the super barrier rectifier of Schottky contacts, which is characterized in that including lower electrode layer (10), heavily doped
The first conductive type epitaxial layer (30), the second conductivity type body region (31), Xiao is lightly doped in miscellaneous first conductivity type substrate layer (20)
Special base contact zone (40), gate electrode layer (42), is sheltered dielectric layer (43), ohmic contact regions (44) and is powered on gate dielectric layer (41)
Pole layer (50)；
The first conductivity type substrate of heavy doping layer (20) is covered on lower electrode layer (10)；
First conductive type epitaxial layer (30) that is lightly doped is covered on heavy doping the first conductivity type substrate layer (20)；
Second conductivity type body region (31) is covered in the part surface being lightly doped on the first conductive type epitaxial layer (30)；
The ohmic contact regions (44) are covered in the part surface on the second conductivity type body region (31)；
The Schottky contact region (40) is covered in the part surface on the second conductivity type body region (31)；
The gate dielectric layer (41) is covered in the part surface being lightly doped on the first conductive type epitaxial layer (30) and second and leads
Part surface on electric type body region (31)；The gate dielectric layer (41) is also covered on Schottky contact region (40)；
The gate electrode layer (42) is covered on gate dielectric layer (41)；
The masking dielectric layer (43) is covered on gate electrode layer (42)；
The upper electrode layer (50) is covered on masking dielectric layer (43) and ohmic contact regions (44), the upper electrode layer (50)
It is connected with Schottky contact region (40).
2. a kind of Ohmic contact according to claim 1 and the super barrier rectifier of Schottky contacts, it is characterised in that：Also
Including the second conduction type protection ring and knot termination environment, the second conduction type protection ring and the ring that knot termination environment is closed form
Shape structure；The intermediate region that the loop configuration is surrounded is active area.
3. a kind of Ohmic contact according to claim 2 and the super barrier rectifier of Schottky contacts, it is characterised in that：Institute
The second conductivity type body region (31) is stated to be made of the structural unit that one or more repeats；Second conductivity type body region (31)
Portion is located in active area, structural unit and the second conduction type protection ring and knot termination environment positioned at active-surface can be with
Contact, can not also contact.
4. a kind of Ohmic contact according to claim 1 and the super barrier rectifier of Schottky contacts, it is characterised in that：Institute
The material for stating gate dielectric layer (41) includes earth silicon material and silicon oxynitride；The material of the masking dielectric layer (43) includes two
Silica material and silicon oxynitride；The material of the gate electrode layer (42) includes DOPOS doped polycrystalline silicon.
5. a kind of Ohmic contact according to claim 1 and the super barrier rectifier of Schottky contacts, it is characterised in that：Institute
It states and the first conductive type epitaxial layer (30) is lightly doped can include enhancement layer structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721207225.XU CN207517703U (en) | 2017-09-20 | 2017-09-20 | A kind of Ohmic contact and the super barrier rectifier of Schottky contacts |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721207225.XU CN207517703U (en) | 2017-09-20 | 2017-09-20 | A kind of Ohmic contact and the super barrier rectifier of Schottky contacts |
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| Publication Number | Publication Date |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946352A (en) * | 2017-09-20 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of super barrier rectifier of Ohmic contact and Schottky contacts and preparation method thereof |
-
2017
- 2017-09-20 CN CN201721207225.XU patent/CN207517703U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946352A (en) * | 2017-09-20 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of super barrier rectifier of Ohmic contact and Schottky contacts and preparation method thereof |
| CN107946352B (en) * | 2017-09-20 | 2023-10-24 | 重庆中科渝芯电子有限公司 | Ohmic contact and Schottky contact super barrier rectifier and manufacturing method thereof |
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