CN206209767U - Sensor probe - Google Patents
Sensor probe Download PDFInfo
- Publication number
- CN206209767U CN206209767U CN201621037786.5U CN201621037786U CN206209767U CN 206209767 U CN206209767 U CN 206209767U CN 201621037786 U CN201621037786 U CN 201621037786U CN 206209767 U CN206209767 U CN 206209767U
- Authority
- CN
- China
- Prior art keywords
- polar curve
- sensor probe
- piezoelectric layer
- transmitting
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Transducers For Ultrasonic Waves (AREA)
Abstract
The utility model discloses a kind of sensor probe, for ultrasonic fingerprint sensor.Sensor probe bag piezoelectric layer, reception polar curve, transmitting polar curve, substrate, connection electrode and lead.Piezoelectric layer includes the piezo column in array arrangement.Receiving polar curve includes a plurality of and is formed over the piezoelectric layer.Transmitting polar curve includes a plurality of and is formed in piezoelectric layer lower section.Substrate is arranged under transmitting polar curve.Connection electrode is formed in substrate lower section.Lead is used for connection electrode with transmitting polar curve and reception polar curve.The sensor probe of the utility model implementation method, polar curve is guided to substrate bottom surface by lead, increase the contact area of polar curve contact by connection electrode, and then in the encapsulation manufacture of ultrasonic fingerprint sensor, so that sensor probe is easy to be turned on circuit board exactly, so as to realize that contact conductor contact separation is small, high-resolution sensor probe making.
Description
Technical field
The utility model is related to sensor technology, more particularly to a kind of sensor probe.
Background technology
In the manufacture of the ultrasonic fingerprint sensor probe of correlation technique, the contact of contact conductor is formed at piezoelectric layer bottom
Face surrounding, generally using anisotropic conductive film (Anisotropic Conductive Film, ACF) by sensor probe with
Circuit board carries out adhesion, is limited to manufacturing process, when the contact spacing of contact conductor is overstocked, the contact of contact conductor be difficult to
Contact on circuit board is accurately turned on, thus cannot be made that contact conductor contact separation is small, high resolution sensor probe.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art.Therefore, the utility model is needed
A kind of sensor probe is provided.
A kind of sensor probe, for ultrasonic fingerprint sensor, the sensor probe includes：
Piezoelectric layer, the piezoelectric layer includes the multiple piezo columns in array arrangement；
The a plurality of reception polar curve above the piezoelectric layer is formed in, every receives polar curve and connects with the corresponding one row piezo column
Connect；
The a plurality of transmitting polar curve below the piezoelectric layer is formed in, every transmitting polar curve connects with piezo column described in corresponding a line
Connect；
Substrate, for carrying the transmitting polar curve, the piezoelectric layer and the transmitting polar curve；
It is formed in the connection electrode of substrate side opposite with the transmitting polar curve；
And lead, described launch polar curve and the connection for connecting reception polar curve and the connection electrode and be connected
Electrode.
In some embodiments, the piezoelectric layer is also included for filling the gap formed between the multiple piezo column
Filler.
In some embodiments, the filler includes black glue material.
In some embodiments, each described piezo column has rectangular cross section, and width is 30 microns, is highly 70-
80 microns.
In some embodiments, it is described receive polar curve thickness be 2.5 microns and/or it is described transmitting polar curve thickness be
2.5 microns.
In some embodiments, the substrate includes glass.
In some embodiments, the substrate thickness is 100-300 microns.
In some embodiments, the sensor probe also includes at least one of following：
Be formed as covering the up-protective layer of the reception polar curve；
Be formed as covering the lower protective layer of the transmitting polar curve, the lower protective layer and the substrate adhesion.
In some embodiments, the lead includes：Be formed as covering the covering part of the connection electrode；
And be formed as connecting the covering part and the reception polar curve and be connected the covering part with the polar curve of launching
Connecting portion.
In some embodiments, the sensor probe also includes at least one of following：
Be formed as covering the protective layer of the connecting portion；
Be formed as covering the tin ball of the covering part.
The sensor probe of the utility model implementation method, will receive polar curve and transmitting polar curve is guided to substrate by lead
Bottom surface, the contact area of contact conductor contact is increased by connection electrode, and then in the encapsulation manufacture of ultrasonic fingerprint sensor
In, it is attached technique with circuit board using connection electrode and lead so that sensor probe is easy to be led with circuit board exactly
It is logical, so as to realize that contact conductor contact separation is small, high-resolution sensor probe making.
Additional aspect of the present utility model and advantage will be set forth in part in the description, partly by from following description
In become obvious, or by it is of the present utility model practice recognize.
Brief description of the drawings
Of the present utility model above-mentioned and/or additional aspect and advantage are from description of the accompanying drawings below to implementation method is combined
Will be apparent and be readily appreciated that, wherein：
Fig. 1 is the preparation method schematic flow sheet of the sensor probe of the utility model implementation method.
Fig. 2 is the schematic cross-section of the sensor probe of the utility model implementation method.
Fig. 3 is the side schematic view of the piezoelectric layer of the utility model implementation method.
Fig. 4 is the piezo column schematic perspective view of the utility model implementation method.
Fig. 5 is the piezoelectric layer schematic diagram of fabrication technology of the utility model implementation method.
Fig. 6 is the transmitting polar curve of the utility model implementation method and receives polar curve schematic diagram of fabrication technology.
Fig. 7 is the preparation method schematic flow sheet of the sensor probe of another implementation method of the utility model.
Fig. 8 is the reception polar curve contact schematic diagram of fabrication technology of the utility model implementation method.
Fig. 9 is the reception polar curve contact and transmitting polar curve bank of contacts cloth schematic diagram of the utility model implementation method.
Figure 10 is the preparation method schematic flow sheet of the sensor probe of the another implementation method of the utility model.
Figure 11 is the up-protective layer and lower protective layer schematic diagram of fabrication technology that the utility model implements implementation method.
Figure 12 is the pad manufacturing process schematic diagram that the utility model implements implementation method.
Figure 13 is the substrate manufacturing process schematic diagram that the utility model implements implementation method.
Figure 14 is the preparation method schematic flow sheet of the sensor probe of the another implementation method of the utility model.
Figure 15 is the connection electrode schematic diagram of fabrication technology of the utility model implementation method.
Figure 16 is the connection electrode arrangement schematic diagram of the utility model implementation method.
Figure 17 is the preparation method schematic flow sheet of the sensor probe of the another implementation method of the utility model.
Figure 18 to Figure 19 is the lead schematic diagram of fabrication technology of the utility model implementation method.
Figure 20 is the manufacturing method of protective layer schematic diagram of the utility model implementation method.
Figure 21 is the tin ball schematic diagram of fabrication technology of the utility model implementation method.
Figure 22 is the schematic cross-section of the sensor probe encapsulation of the utility model implementation method.
Figure 23 is the tin ball arrangement schematic diagram of the utility model implementation method.
Figure 24 is the sensor probe application schematic diagram of the utility model implementation method.
Main element symbol description：
Sensor probe 100, piezoelectric layer 10, piezo column 12, filler 14, receive polar curve 20, receive polar curve contact 22, on
Protective layer 24, pad 26, transmitting polar curve 30, transmitting polar curve contact 32, colloid 33, lower protective layer 34, substrate 40, connection electrode
50th, lead 60, covering part 62, connecting portion 64, protective layer 66, tin ball 70.
Specific embodiment
Implementation method of the present utility model is described below in detail, the example of the implementation method is shown in the drawings, wherein
Same or similar label represents same or similar element or the element with same or like function from start to finish.Lead to below
It is exemplary to cross the implementation method being described with reference to the drawings, and is only used for explaining the utility model, and it is not intended that to this practicality
New limitation.
In description of the present utility model, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width
Degree ", " thickness ", " on ", D score, "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outward ",
The orientation or position relationship of the instructions such as " clockwise ", " counterclockwise " be based on orientation shown in the drawings or position relationship, be only for
Be easy to description the utility model and simplify describe, rather than indicate imply signified device or element must have it is specific
Orientation, with specific azimuth configuration and operation, therefore it is not intended that to limitation of the present utility model.Additionally, term " first ",
" second " is only used for describing purpose, and it is not intended that indicating or implying relative importance or imply to indicate indicated technology
The quantity of feature.Thus, " first " is defined, the feature of " second " can be expressed or implicitly include one or more
The feature.In description of the present utility model, " multiple " is meant that two or more, unless otherwise clearly specific
Limit.
, it is necessary to explanation, unless otherwise clearly defined and limited, term " is pacified in description of the present utility model
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected, or be detachably connected, or integratedly
Connection；Can mechanically connect, or electrically connect or can mutually communicate；Can be joined directly together, it is also possible in
Between medium be indirectly connected to, can be two element internals connection or two interaction relationships of element.For this area
For those of ordinary skill, concrete meaning of the above-mentioned term in the utility model can be as the case may be understood.
In the utility model, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or it
D score can include the first and second feature directly contacts, it is also possible to including the first and second features not be directly contact but logical
The other characterisation contact crossed between them.And, fisrt feature second feature " on ", " top " and " above " include the
One feature is directly over second feature and oblique upper, or is merely representative of fisrt feature level height higher than second feature.First is special
Levy second feature " under ", " lower section " and " below " include fisrt feature immediately below second feature and obliquely downward, or only
Represent that fisrt feature level height is less than second feature.
Following disclosure provides many different implementation methods or example is used for realizing different structure of the present utility model.
In order to simplify disclosure of the present utility model, hereinafter the part and setting to specific examples are described.Certainly, they are only
Example, and purpose does not lie in limitation the utility model.Additionally, the utility model can in different examples repeat reference numerals
And/or reference letter, this repetition is for purposes of simplicity and clarity, discussed various implementation methods itself not to be indicated
And/or the relation between setting.Additionally, the example of the various specific technique that provides of the utility model and material, but this
Field those of ordinary skill can be appreciated that the application of other techniques and/or the use of other materials.
Refer to Fig. 1, the manufacture method of the utility model implementation method, the sensing for manufacturing ultrasonic fingerprint sensor
Device is popped one's head in.Manufacture method comprises the following steps：
S10：Piezoelectric layer is formed, piezoelectric layer includes the multiple piezo columns in array arrangement；
S20：A plurality of reception polar curve over the piezoelectric layer is formed, every receives polar curve and connected with corresponding row piezo column；
S30：The a plurality of transmitting polar curve below piezoelectric layer is formed in, every transmitting polar curve is connected with corresponding a line piezo column；
S40：The adhesion substrate below transmitting polar curve；
S50：Connection electrode is formed in substrate side opposite with transmitting polar curve；
And S60：Form lead and launch polar curve and connection electrode connecting to receive polar curve and connection electrode and be connected.
Refer to Fig. 2, the sensor probe 100 of the utility model implementation method, for ultrasonic fingerprint sensor.Sensing
Device probe 100 includes：Piezoelectric layer 10, reception polar curve 20, transmitting polar curve 30, substrate 40, connection electrode 50 and electroplate lead wire 60.Pressure
Electric layer 10 includes the multiple piezo columns 12 in array arrangement.Receiving polar curve 20 includes a plurality of and is formed in the top of piezoelectric layer 10, often
Bar receives polar curve 20 and is connected with corresponding row piezo column 12.Launching polar curve 30 includes a plurality of and is formed in the lower section of piezoelectric layer 10, often
Bar transmitting polar curve 30 is connected with corresponding a line piezo column 12.Substrate 40 is used to carry transmitting polar curve 30, piezoelectric layer 10 and receiving pole
Line 20.Connection electrode 50 is formed in substrate 40 with the opposite side of transmitting polar curve 30.Lead 60 is used to connect reception polar curve 20 and connect
Receiving electrode 50 and connection transmitting polar curve 30 and connection electrode 50.
The manufacture method of the utility model implementation method can be used to manufacture the sensor probe of the utility model implementation method
100。
The sensor probe 100 and its manufacture method of the utility model implementation method, polar curve 20 will be received by lead 60
And transmitting polar curve 30 is guided to the bottom surface of substrate 40, and the contact area of contact conductor contact, Jin Er are increased by connection electrode 50
In the encapsulation manufacture of ultrasonic fingerprint sensor, technique is attached with circuit board using connection electrode 50 and lead 60 so that
Sensor probe 100 is easy to be turned on circuit board exactly, so as to realize that contact conductor contact separation is small, high-resolution sensing
The making of device probe 100.
Below as a example by manufacturing single sensor probe 100, manufacturing process and structure are explained.
Fig. 3 to Fig. 5 is referred to, specifically, in some embodiments, piezoelectric layer 10 is included in multiple pressures of array arrangement
Electric post 12 and filler 14.
Wherein, filler 14 is used to fill the gap formed between multiple piezo columns 12.
In some embodiments, piezoelectric layer 10 can use piezoelectric, such as piezoelectric ceramics etc..Piezo column 12 can lead to
Cross carries out cutting formation to block piezoelectric.In some instances, the piezo column 12 of formation is arranged in array, for example, can be in
Matrix arrangement.In this way, arranged in arrays be easy to technique manufacture, reduces cost.Specifically, as a example by arranged in arrays, in processing procedure
In can by using with certain thickness cutter sweep with first direction to being cut to piezoelectric, and according to piezo column
The design requirement of 12 numbers, repeats cutting action until the cutting of first direction is completed.
Specifically, the thickness of cutter sweep namely the gap being ultimately formed between piezo column 12, the depth of cutting namely
It is ultimately formed the height of piezo column 12.Generally suitable gap can be selected according to the design requirement for making sensor probe 100
And height dimension.
It is preferred that in some examples, to meet the demand such as larger than 508DPI of the sampling resolution of sensor probe 100
(Dots per Inch, the points that per inch is printed), the gap between piezo column 12 can be 50 microns.When gap is more than
At 50 microns, sampling resolution will be reduced, and the ultrasonic signal launched or receive will die down, so as to cannot accurately know
Other fingerprint.
It should be noted that the thickness of piezoelectric should be more than the height of the piezo column 12 for ultimately forming, to facilitate system
The carrying out of journey technique, in other words, in cutting, the design size demand according to piezo column 12 is cut, and when cutting, bottom
Portion need to keep continuous.
After the completion of cutting in a first direction, to form piezo column 12 arranged in arrays, need to be different with first direction
Second direction on cut, for example second direction can be orthogonal with first direction.With the cutting phase on first direction
Similar, design requirement, intercolumniation gap according to piezo column 12 etc. complete the cutting in second direction.After the completion of cutting, piezoresistive material
Material includes multiple piezo columns 12 that top is produced by cutting, and bottom is continuous portion.
In this way, multiple piezo columns 12 can be cut out according to design requirement.
Specifically, in some embodiments, each piezo column 12 has rectangular cross section, and width is 30 microns, height
It is 70-80 microns.
In this way, can meet sensor probe 100 uses resolution ratio for height, the demand of 508DPI is greater than, certainly,
In different designs, the size of piezo column 12 is also by difference.
Referring to Fig. 3, further, the continuous portion that the piezoelectric bottom after cutting is formed is clout, need to be carried out
Removal.If being worked on raw material, dispersion cannot be formed piezo column 12 piezoelectric layer 10, therefore, continuing
Need to fill the gap formed between piezo column after cutting twice 12 by filler 14 before cutting.
In this way, by the viscosity connection of multiple piezo columns 12, and then clout can be abraded so as to form piezoelectric layer 10.
In some embodiments, filler can be black glue material.For example can be black glue epoxy resin, black glue epoxy
Resin is insulating materials, and it has surface-brightening after the resistance to dissolubility of good heatproof, and solidification, and cementability is strong.
In this way, good adhesion between multiple piezo columns 12 can be caused by black glue material, and cause that piezoelectric layer 10 has
There is good mechanicalness.
Additionally, filler 14 is not limited herein also to be other while having the electrical material of non-conductive and non-depressed.
Fig. 6 is referred to, further, after piezoelectric layer 10 is formed, row electrode lines will be entered on the upper and lower surface of piezoelectric layer 10
Making technology.
Specifically, in some embodiments, upper strata and lower floor's polar curve circuit can be formed using sputtering process.
Sputtering process makes target material surface component with atomic group or ionic species using electronics or superlaser bombardment target
Sputter out, and be finally deposited in substrate surface, experience film forming procedure, ultimately form film.
It is preferred that in some examples, from silver as target, being formed positioned at the top of piezoelectric layer 10 by sputtering process
Receive polar curve 20 and the transmitting polar curve 30 positioned at the lower section of piezoelectric layer 10.
Specifically, in some embodiments, the thickness for receiving polar curve 20 and transmitting polar curve 30 is 2.5 microns.
In this way, it is good electrical to ensure to may be such that the thickness for receiving polar curve 20 and transmitting polar curve 30 meets process requirements
Energy.
More specifically, when matrix arrangement of the piezo column 12 in m*n, each upper surface of row piezo column 12 forms a reception
Polar curve 20, in other words, will form n bars and receive polar curve 20 in the top of piezoelectric layer 10.And formed per the lower surface of a line piezo column 12
One transmitting polar curve 30, in other words, in the m bars transmitting polar curve 30 formed below of piezoelectric layer 10.
It should be noted that transmitting polar curve 30 with receive polar curve 20 need it is arranged in a crossed manner, in other words, transmitting polar curve 20 and
Receiving polar curve 30 can not be arranged in parallel, for example, can be vertically arranged.
It is arranged such, transmitting polar curve 20 intersects with reception polar curve 30, can be used for by object close to piezoelectric layer 10
Or contacted with piezoelectric layer 10 and launch and receive signal.
Specifically, transmitting and received ultrasonic signal be can be used to.When hand is near to or in contact with piezoelectric layer 10, piezoelectric
Change, when the frequency of change is more than frequency of sound wave, such as 10-20 megahertzs, ultrasonic signal, ultrasonic signal will be produced
Launched along finger orientation by transmitting polar curve 30, can be received by reception polar curve 20 by the ultrasonic signal that finger reflects.And then fingerprint
Sensor can be according to the difference identification fingerprint between transmitting and the signal for receiving.
More specifically, being arranged in piezoelectricity when the voltage with the resonant frequency in ultrasonic wave frequency band puts on from outside
When the transmitting polar curve 30 and reception polar curve 20 of two apparent surfaces of layer 10, piezoelectric layer 10 will produce ultrasonic signal.
On ultrasonic signal, it is not in contact with when finger or during close to piezoelectric layer 10, due to air and for launching ultrasound
The difference of the acoustic impedance between the piezoelectric layer 10 of ripple signal, can return from the major part of the ultrasonic signal of the transmitting transmitting of polar curve 30
To polar curve is received, rather than through the interface piezoelectric layer 10 and air.
Meanwhile, when finger is near to or in contact with piezoelectric layer 10, from a part for the ultrasonic signal of the transmitting transmitting of polar curve 30
The incoming finger in interface through the skin and piezoelectric layer 10 of finger.Therefore, the intensity of the signal for reflecting and returning is dropped
It is low, enabling to detect fingerprint pattern.
Although user is with the naked eye difficult to the pattern of fingerprint, fingerprint can have the figure that many crestal lines and valley line are repeated
Case.When crestal line and valley line are repeated, the height between crestal line and valley line can be changed.Therefore, piezoelectric layer 10 not with the paddy of fingerprint
Direct skin contact at line, but can be with the direct skin contact at the crestal line of fingerprint.
Therefore, the ultrasonic signal from transmitting polar curve 30 transmitting of the piezoelectric layer 10 of the valley line corresponding to fingerprint is launched into
Outside, and most of ultrasonic signal is by towards internal reflection, and received by reception polar curve 20.And from corresponding to fingerprint ridge
The ultrasonic signal of transmitting polar curve 30 transmitting of line passes through the boundary face of finger and is reflected so that receive the super of the reception of polar curve 20
The intensity of acoustic signals is significantly reduced.
Therefore, according to the valley line and crestal line of the fingerprint in piezoelectric layer 10, can by measure ultrasonic signal intensity or
Reflectance factor detects fingerprint pattern, and the reflection and reception of ultrasonic signal be the difference due to acoustic impedance.
Fig. 7 is referred to, is that subsequent encapsulating process is prepared further, need to first by the receiving pole of the top of piezoelectric layer 10
Line 20 is guided to the lower section of piezoelectric layer 10, and in some embodiments, manufacture method includes step：
S70：Perforation is formed from top to bottom at the piezo column being connected with the one end for receiving polar curve to guide reception polar curve to pass through
Wear piezo column and in piezo column reception polar curve contact formed below.
Fig. 8 is referred to, in specific manufacturing process, can made a reservation for according to design requirement on uncut piezoelectric
Position makes perforation first, easily operated compared to eleven punch 11 is entered after the completion of piezo column 12 is cut.Can certainly be in cutting
Into the laggard eleven punch 11 of piezo column 12, it is not limited herein.
It should be noted that only needing side outlet due to receiving polar curve 20, every reception polar curve 20 only needs selection in other words
One end can select the pressure into eleven punch 11 as contact, therefore during perforation is made according to the connecting point position of actual design
Electric post 12, for example, perforation can be selected in matrix arrangement relative both sides, naturally it is also possible to which perforation all is placed in into side.
Specifically, perforation is made using plating silver process, and the reception polar curve 20 that can will be so located at the top of piezoelectric layer 10 leads to
The electrosilvering for crossing perforation is conducted to the lower section of piezoelectric layer 10, and in the reception polar curve contact 22 formed below of piezo column 12 of perforation.
It should be noted that transmitting polar curve 30 will be no longer set below a line or two row piezo columns 12 for forming perforation,
Connect between to prevent polar curve and cause short circuit.
Fig. 9 is referred to, analogously, the transmitting polar curve 30 of the lower section of piezoelectric layer 10 needs also exist for forming contact, that is to say hair
Emitter-base bandgap grading line contact 32.
Figure 10 is referred to, specifically, in some embodiments, manufacture method also includes step：
S80：Transmitting polar curve contact is formed at the piezo column that the one end with transmitting polar curve is connected.
Similarly, transmitting polar curve 30 also only needs side outlet, therefore the either end of transmitting polar curve 30 may be selected as hair
Emitter-base bandgap grading line contact 32.
Figure 11 is referred to, further, to protect the naked reception polar curve 20 being exposed on the external and transmitting polar curve 30, in some realities
Apply in mode, manufacture method also includes：Form the up-protective layer that covering receives polar curve；And/or formed under covering transmission polar curve
Protective layer.
In some embodiments, sensor probe 100 further includes up-protective layer 24 and/or lower protective layer 34.On
The covering of protective layer 24 receives polar curve 20, and polar curve 30 is launched in the covering of lower protective layer 34.
In this way, the design of protective layer can play a protective role to polar curve, and then ensure the electrical of sensor probe 100
Energy.
It is preferred that up-protective layer 24 and lower protective layer 34 can use SU8 materials, insulate and protect polar curve so as to reach
Effect.
It should be noted that due in follow-up encapsulation procedure, need to be by contact by sensor probe 100 and circuit board
Corresponding contact is electrically connected, therefore protective layer should avoid transmitting polar curve contact 32 and receive polar curve contact 22 and set.
In the industrial production, it usually needs high-volume produces many sensor probes 100, such as 1000-2000 simultaneously.
Therefore many manufactures of sensor probe 100 can be on the piezoelectric materials carried out simultaneously, to form sensor probe array.
Specific manufacturing step is explained with reference to the above-mentioned manufacture method by taking single sensor probe 100 as an example and structure
Bright, here is omitted.Generally, block piezoelectric can be chosen and circular piezoelectric chip is fabricated to, its radial dimension is 8 inches
Or 12 inches.
Further, in some embodiments, manufacture method also includes step：
Pad is formed above up-protective layer.
Figure 12 is referred to, specifically, pad 26 can be glass or silicon chip etc..Pad 26 can be by colloid and up-protective layer
24 viscosity connections, for the carrying out for strengthening the integral hardness of sensor probe 100 to facilitate subsequent manufacturing procedures.In some examples
In, the thickness of pad 26 can be 6-7 times of the thickness of sensor probe 100.
Figure 13 is referred to, further, to carry sensor probe 100, need to be lower in other words to protect below transmitting polar curve 30
The lower section adhesion substrate 40 of sheath 34.
In some embodiments, substrate 40 can be glass.
In this way, substrate 40 can be as the element above carrier carrying, for transmitting polar curve 30, piezoelectric layer 10 and receiving pole
Line 20 is played a supporting role.
Specifically, polar curve contact 22, transmitting polar curve contact 32, and lower protective layer are received because piezoelectric layer 10 is formed below
34, therefore be not plane, need to be filled and led up by colloid 33 and carry out adhesion with substrate 40.The thickness of glue-line is 5-10 microns.
The thickness of substrate 40 can be chosen according to global design demand, in some embodiments, the thickness of substrate
It can be 100-300 microns.
For example, in some instances, global design demand is relatively thin, then substrate thickness can be 100-150 microns, and simultaneously
Need to consider flintiness of the substrate 40 as carrier, it is also possible to thicken to 150-300 microns, it is interval in the thickness of 150-300
Interior, glass has good bearing capacity.
Need explanatorily, different from up-protective layer 24 and lower protective layer 34, pad 26 and substrate 40 need all coverings whole
The upper surface of probe and lower surface, and receive polar curve contact 22 and transmitting polar curve contact 32 without avoiding.
Further, it is that will receive polar curve 20 and launch polar curve 30 to be directed to the lower section of substrate 40, in other words, polar curve will be received
Contact 22 and transmitting polar curve contact 32 are directed to the lower section of substrate 40, such that it is able to effectively be turned on circuit board, need to be in substrate 40
Lower section carries out related process.
Figure 14 is referred to, in some embodiments, step S50 further includes sub-step：
S52：Metal level is formed in substrate side opposite with transmitting polar curve；
S54：Connection electrode corresponding with reception polar curve and transmitting polar curve is formed respectively in metal level.
Figure 15 and Figure 16 is referred to, specifically, layer of metal layer is electroplated first below substrate 40, and then by etch gold
Category layer forms connection electrode 50, and connection electrode 50 has circular cross section.
Each receives polar curve contact 22 and transmitting polar curve contact 32 corresponds to a connection electrode 50 respectively, subsequently to manufacture
After step, reception polar curve contact 22 and transmitting polar curve contact 32 can be respectively communicated with by connection electrode 50.Therefore, under substrate 40
Side will form the array of connection electrode 50.Every number of the connection electrode of sensor probe 100 50 is the sensor probe 100
The summation for receiving polar curve contact 22 and the number of transmitting polar curve contact 32.
Covered by substrate 40 due to receiving polar curve contact 22 and transmitting polar curve contact 32, and to cause contact and being connected electricity
Pole 50 is connected, it is necessary to so that receive polar curve contact 22 and transmitting polar curve contact 32 is exposed and again, and then by related process
It is attached.
Figure 17 is referred to, in some embodiments, step S60 includes sub-step：
S62：Substrate is cut to from bottom to top in reception polar curve contact side to be formed under the piezo column for receiving polar curve contact
Side is forming the first cut surface；
And S64：Lead covering connection electrode and the first cut surface is formed to connect connection electrode and receive polar curve contact.
In some embodiments, step S60 includes sub-step：
S66：Substrate is cut under the piezo column to form transmitting polar curve contact from bottom to top in transmitting polar curve contact side
Side is forming the second cut surface；
And S68：Lead covering connection electrode and the second cut surface is formed to connect connection electrode with transmitting polar curve contact.
It is appreciated that the explanation for being formed to receiving polar curve contact 22 and transmitting polar curve limit 24 as described above understands, connect
Point will be formed in the lower section of piezo column 12 of the surrounding of piezoelectric layer 10.Therefore, to cause contact again exposed, substrate 40 will be cut
Cut.
Figure 18 is referred to, specifically, for receiving the side of polar curve contact 22, substrate 40 can be existed by the way of beveling
The side of reception polar curve contact 22 is cut to be formed to receive from bottom to top and is cut with forming first below the piezo column 12 of polar curve contact 22
Face.Certainly, if multiple polar curve contacts 22 that receive are respectively formed in the relative both sides in the lower section of piezoelectric layer 10, both sides need to be entered respectively
Row cutting.
Analogously, for the side of transmitting polar curve contact 32, substrate 40 is cut from bottom to top in the side of transmitting polar curve contact 32
Cut to the piezo column 12 for forming transmitting polar curve contact 32 to form the second cut surface.If 32 points of multiple transmitting polar curve contact
The relative both sides in the lower section of piezoelectric layer 10 are not formed at, then both sides need to be cut respectively.
Need explanatorily, to be should be noted that in cutting and be cut to the lower section of piezo column 12 so that contact is exposed, without
The part of piezo column 12 should be cut to.
It is to be connected preparation with connection electrode 50 in this way, will cause that the contact covered by substrate 40 is again exposed.
Figure 19 is referred to, further, after dicing, uses the techniques such as plating or jet-plating metallization to form lead 60 with to even
Receiving electrode 50 and contact are attached.In some embodiments, lead 60 includes covering part 62 and connecting portion 64.Covering part 62
Covering connection electrode 50, and connecting portion 64 is connected with covering part 62, and cover cut surface and contact.In the fabrication process, cover
Portion 62 and connecting portion 64 are once formed.
In this way, will cause that connection electrode 50 is connected with contact.
It is preferred that lead 60 can be from materials such as gold, silver or nickel.
Refer to Figure 20, further, the electroplate lead wire 60 of formation still in naked state, therefore, be exposed on the external to naked
The surface of lead 60 armor coated 66.
Need explanatorily, at armor coated 66, the exposed part of whole electroplate lead wire 60 can all be covered,
And the covering part 62 for covering connection electrode 50 will further be used to be turned on circuit board, therefore, protective layer 66 should be carried out
Treatment.
Specifically, position to be processed can be being needed, the position of protective layer is being removed in other words, that is to say and coated at covering part 62
Photoresist, by being exposed treatment at coating, can so cause that covering part 62 exposes again.
Figure 21 is referred to, further, for convenience of being subsequently attached with circuit board, in some embodiments, manufacture
Method may include step：
Tin ball is implanted at covering part.
In some embodiments, sensor probe 100 also includes tin ball 70, the covering covering part 62 of tin ball 70.
So, it is possible to use tin ball forms pad, convenient subsequently to be welded with circuit board.Form the process of tin ball 70
Can be the placement material tin at covering part 62, tin ball 70 is formed after pyroprocess and cooling procedure.
Figure 22 and Figure 23 is referred to, so far, the manufacturing process of sensor probe 100 is basically completed, can be by abovementioned steps
Pad 26 remove, while the colloid removal of adhesion up-protective layer 24 and pad 26 will be used for.
Further, sensor probe array is cut into single sensor probe 100, in this way, forming single sensor
BGA (Ball Grid Array, the BGA) encapsulation of probe 100.
Figure 24 is referred to, after the completion of single sensor probe 100 is manufactured, its electronics is filled with application by up-protective layer 24
The cover plate for putting such as mobile phone or panel computer is fitted, and specifically, sensor probe 100 will be pasted on cover plate lower section.
In sum, the single BGA package of sensor probe 100 can be formed by the description of above-mentioned manufacturing process, due to
The polar curve contact for being located at the surrounding of piezoelectric layer 10 is guided to the lower section of substrate 40 so that the whole region of substrate 40 is used equally to the company of being formed
Receiving electrode 50 is simultaneously connected by lead 60 with the contact of circuit board, it is achieved thereby that the rewiring of polar curve, it will be understood that phase
Turned on compared with the polar curve contact by the surrounding of piezoelectric layer 10 and circuit board, after rewiring, the available space of polar curve contact will
Significantly become big, for the less situation in polar curve contact separation, connection electrode position can be flexibly set and turned on contact, be effectively improved
The problem of difficulty is connected with circuit board because polar curve contact separation is too small.Further, since making technology is only below piezoelectric layer 10
Carry out, therefore, the width dimensions of sensor probe 100 can't be dramatically increased.
In the description of this specification, reference term " implementation method ", " some implementation methods ", " schematically implementation
The description of mode ", " example ", " specific example " or " some examples " etc. means to combine the implementation method or example describes
Specific features, structure, material or feature are contained at least one implementation method of the present utility model or example.In this explanation
In book, the schematic representation to above-mentioned term is not necessarily referring to identical implementation method or example.And, the specific spy of description
Levy, structure, material or feature can in an appropriate manner be combined in one or more any implementation methods or example.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that indicating or implying relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include at least one this feature.In description of the present utility model, " multiple " is meant that at least two, such as two
It is individual, three etc., unless otherwise expressly limited specifically.
Although implementation method of the present utility model has been shown and described above, it is to be understood that above-mentioned embodiment party
Formula is exemplary, it is impossible to be interpreted as to limitation of the present utility model, one of ordinary skill in the art is of the present utility model
In the range of above-mentioned implementation method can be changed, change, replace and modification.
Claims (10)
1. a kind of sensor probe, for ultrasonic fingerprint sensor, it is characterised in that the sensor probe includes：
Piezoelectric layer, the piezoelectric layer includes the multiple piezo columns in array arrangement；
The a plurality of reception polar curve above the piezoelectric layer is formed in, every receives polar curve and connected with the corresponding one row piezo column；
The a plurality of transmitting polar curve below the piezoelectric layer is formed in, every transmitting polar curve is connected with piezo column described in corresponding a line；
Substrate, for carrying the transmitting polar curve, the piezoelectric layer and the transmitting polar curve；
It is formed in the connection electrode of substrate side opposite with the transmitting polar curve；And
Lead, described polar curve and the connection electrode are launched for connecting reception polar curve and the connection electrode and be connected.
2. sensor probe as claimed in claim 1, it is characterised in that the piezoelectric layer is also included for filling the multiple
The filler in the gap formed between piezo column.
3. sensor probe as claimed in claim 2, it is characterised in that the filler includes black glue material.
4. sensor probe as claimed in claim 1, it is characterised in that each described piezo column has rectangular cross section, wide
It is 30 microns to spend, and is highly 70-80 microns.
5. sensor probe as claimed in claim 1, it is characterised in that the thickness of the reception polar curve be 2.5 microns and/or
The thickness for launching polar curve is 2.5 microns.
6. sensor probe as claimed in claim 1, it is characterised in that the substrate includes glass.
7. sensor probe as claimed in claim 1, it is characterised in that the substrate thickness is 100-300 microns.
8. sensor probe as claimed in claim 1, it is characterised in that the sensor probe also include it is following at least
One：
Be formed as covering the up-protective layer of the reception polar curve；
Be formed as covering the lower protective layer of the transmitting polar curve, the lower protective layer and the substrate adhesion.
9. sensor probe as claimed in claim 1, it is characterised in that the lead includes：Be formed as covering the connection
The covering part of electrode；And
Be formed as connecting the covering part with the reception polar curve and be connected the connecting portion of the covering part and the transmitting polar curve.
10. sensor probe as claimed in claim 9, it is characterised in that the sensor probe also include it is following in extremely
It is few one：
Be formed as covering the protective layer of the connecting portion；
Be formed as covering the tin ball of the covering part.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621037786.5U CN206209767U (en) | 2016-09-05 | 2016-09-05 | Sensor probe |
| US15/489,837 US10387706B2 (en) | 2016-09-05 | 2017-04-18 | Ultrasonic transducer of ultrasonic fingerprint sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621037786.5U CN206209767U (en) | 2016-09-05 | 2016-09-05 | Sensor probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206209767U true CN206209767U (en) | 2017-05-31 |
Family
ID=58759638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621037786.5U Expired - Fee Related CN206209767U (en) | 2016-09-05 | 2016-09-05 | Sensor probe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206209767U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113196280A (en) * | 2019-09-27 | 2021-07-30 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint sensor device, method of operating an ultrasonic fingerprint sensor device and method of manufacturing an ultrasonic fingerprint sensor device |
-
2016
- 2016-09-05 CN CN201621037786.5U patent/CN206209767U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113196280A (en) * | 2019-09-27 | 2021-07-30 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint sensor device, method of operating an ultrasonic fingerprint sensor device and method of manufacturing an ultrasonic fingerprint sensor device |
| CN113196280B (en) * | 2019-09-27 | 2024-03-19 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint sensor device, method of operating an ultrasonic fingerprint sensor device, and method of manufacturing an ultrasonic fingerprint sensor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106295625A (en) | Sensor probe and manufacture method thereof | |
| EP2723506B1 (en) | Ultrasound transducer assembly and method of manufacturing the same | |
| CN1327976C (en) | System for attaching acoustic element to integrated circuit | |
| US6467138B1 (en) | Integrated connector backings for matrix array transducers, matrix array transducers employing such backings and methods of making the same | |
| JP5651608B2 (en) | Microelectronic assembly having impedance controlled wire bonds and conductive reference components | |
| CN206209792U (en) | Ultrasonic fingerprint sensor and fingerprint recognition module | |
| CN109192749B (en) | Ultrasonic transducer array and manufacturing and packaging method thereof | |
| CN105640588B (en) | The extensive ultrasonic plane array of deep brain stimulation and neuromodulation probe and preparation method thereof | |
| US20070085452A1 (en) | Alignment features for dicing multi element acoustic arrays | |
| JP2011507457A (en) | Composite passive materials for ultrasonic transducers | |
| CN106412780A (en) | Ultrasonic probe and manufacturing method thereof | |
| CN206209767U (en) | Sensor probe | |
| CN106355157A (en) | Fingerprint sensor and fingerprint identification module | |
| JP5439683B2 (en) | 3D electronic module | |
| CN206209765U (en) | Fingerprint sensor and fingerprint recognition module | |
| US11610427B2 (en) | Ultrasonic transducer device, acoustic biometric imaging system and manufacturing method | |
| CN108878637A (en) | Assembling structure, ultrasonic device, ultrasonic probe and ultrasonic unit | |
| CN206209794U (en) | Fingerprint recognition module and electronic installation | |
| JP6988162B2 (en) | Sensor unit and sensor module | |
| KR20140134286A (en) | Fine pitch probe array from bulk material | |
| US20180068149A1 (en) | Fingerprint sensor and fingerprint identification module comprising the same | |
| US10387706B2 (en) | Ultrasonic transducer of ultrasonic fingerprint sensor and manufacturing method thereof | |
| JP3612312B2 (en) | Ultrasonic probe and manufacturing method thereof | |
| CN108062501A (en) | Fingerprint recognition module and electronic device | |
| Wodnicki et al. | PIN-PMN-PT single crystal composite and 3D printed interposer backing for ASIC integration of large aperture 2D array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 330013 east of Xueyuan 6th Road, south of Tianxiang Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: OFilm Microelectronics Technology Co.,Ltd. Address before: 330013 no.1189 Jingdong Avenue, high tech Zone, Nanchang City, Jiangxi Province Patentee before: NANCHANG OFILM BIO-IDENTIFICATION TECHNOLOGY Co.,Ltd. Address after: 330013 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: Jiangxi OMS Microelectronics Co.,Ltd. Address before: 330013 east of Xueyuan 6th Road, south of Tianxiang Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee before: OFilm Microelectronics Technology Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170531 Termination date: 20210905 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |