CN106295625A - Sensor probe and manufacture method thereof - Google Patents
Sensor probe and manufacture method thereof Download PDFInfo
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- CN106295625A CN106295625A CN201610801759.9A CN201610801759A CN106295625A CN 106295625 A CN106295625 A CN 106295625A CN 201610801759 A CN201610801759 A CN 201610801759A CN 106295625 A CN106295625 A CN 106295625A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2437—Piezoelectric probes
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- Theoretical Computer Science (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The invention discloses a kind of sensor probe, for ultrasonic fingerprint sensor.Sensor probe bag piezoelectric layer, reception polar curve, transmitting polar curve, substrate, connection electrode and lead-in wire.Piezoelectric layer includes the piezo column of arrangement in array.Receive polar curve include a plurality of and be formed at above piezoelectric layer.Launch polar curve include a plurality of and be formed at below piezoelectric layer.Substrate is arranged under transmitting polar curve.Connect electrode to be formed at below substrate.Lead-in wire is used for connecting electrode and launches polar curve and receive polar curve.Additionally, invention additionally discloses the manufacture method of a kind of sensor probe.The sensor probe of embodiment of the present invention and manufacture method thereof, by lead-in wire, polar curve is guided to substrate bottom surface, the contact area of polar curve contact is increased by connecting electrode, and then in the encapsulation of ultrasonic fingerprint sensor manufactures, sensor probe is prone to exactly turn on circuit board, thus realizes that contact conductor contact separation is little, the making of high-resolution sensor probe.
Description
Technical field
The present invention relates to sensor technology, particularly to a kind of sensor probe and manufacture method thereof.
Background technology
In the manufacture of the ultrasonic fingerprint sensor probe of correlation technique, the contact of contact conductor is formed at the bottom of piezoelectric layer
Face surrounding, generally use anisotropic conductive film (Anisotropic Conductive Film, ACF) by sensor probe with
Circuit board carries out adhesion, is limited to manufacturing process, when the contact spacing of contact conductor is overstocked, the contact of contact conductor be difficult to
Contact on circuit board accurately turns on, thus cannot make the sensor probe that contact conductor contact separation is little, resolution is high.
Summary of the invention
It is contemplated that at least solve one of technical problem present in prior art.To this end, the present invention needs to provide one
Plant sensor probe and manufacture method thereof.
A kind of sensor probe, for ultrasonic fingerprint sensor, described sensor probe includes:
Piezoelectric layer, described piezoelectric layer includes multiple piezo columns of arrangement in array；
Being formed at a plurality of reception polar curve above described piezoelectric layer, every receives polar curve with piezo column described in corresponding string even
Connect；
It is formed at a plurality of transmitting polar curve below described piezoelectric layer, launches polar curve with piezo column described in corresponding a line even for every
Connect；
Substrate, is used for carrying described transmitting polar curve, described piezoelectric layer and described transmitting polar curve；；
It is formed at the connection electrode of described substrate and the described opposing side of transmitting polar curve；And
Lead-in wire, is used for connecting described reception polar curve and is connected electrode with described and connect described transmitting polar curve and be connected electricity with described
Pole.
In some embodiments, described piezoelectric layer also includes for filling the gap formed between the plurality of piezo column
Implant.
In some embodiments, described implant includes black glue material.
In some embodiments, each described piezo column has rectangular cross section, and width is 30 microns, and height is 70-
80 microns.
In some embodiments, the thickness of described reception polar curve is that the thickness of 2.5 microns and/or described transmitting polar curve is
2.5 micron.
In some embodiments, described substrate includes glass.
In some embodiments, described substrate thickness is 100-300 micron.
In some embodiments, at least one during described sensor probe also includes as follows:
Be formed as covering the up-protective layer of described reception polar curve；
Be formed as covering the lower protective layer of described transmitting polar curve, described lower protective layer and described substrate adhesion.
In some embodiments, described lead-in wire includes: be formed as covering the covering part of described connection electrode；And
Be formed as connecting described covering part and described reception polar curve and the company being connected described covering part and described transmitting polar curve
Meet portion.
In some embodiments, at least one during described sensor probe also includes as follows:
Be formed as covering the protective layer of described connecting portion；
Be formed as covering the stannum ball of described covering part.
A kind of manufacture method, for manufacturing the sensor probe of ultrasonic fingerprint sensor, described manufacture method include with
Lower step:
Forming piezoelectric layer, described piezoelectric layer includes multiple piezo columns of arrangement in array；
Forming a plurality of reception polar curve above described piezoelectric layer, every receives polar curve with piezo column described in corresponding string even
Connect；
At described piezoelectric layer a plurality of transmitting polar curve formed below, launch polar curve with piezo column described in corresponding a line even for every
Connect；
Adhesion substrate below described transmitting polar curve；
It is connected electrode with the formation of described transmitting polar curve opposing side at described substrate；And
Form lead-in wire and be connected electrode to connect described reception polar curve with described and connect described transmitting polar curve and be connected with described
Electrode.
In some embodiments, at least one step during described manufacture method also includes as follows:
Form the up-protective layer covering described reception polar curve；
Form the lower protective layer covering described transmitting polar curve, described lower protective layer and described substrate adhesion.
In some embodiments, the described step at described substrate connection formed below electrode includes sub-step:
Metal level is formed with launching the opposing side of polar curve at described substrate；And
The connection electrode corresponding with described reception polar curve and described transmitting polar curve is formed respectively at described metal level.
In some embodiments, described manufacture method further comprises the steps of:
Perforation is formed from top to bottom to guide described receiving pole at the piezo column being connected with one end of described reception polar curve
Line runs through described piezo column and at described piezo column reception formed below polar curve contact.
In some embodiments, the described lead-in wire that formed is connected electrode with the described reception polar curve of connection with described and connect institute
State transmitting polar curve and include sub-step with the described step being connected electrode:
It is cut to from bottom to top form described reception polar curve contact in described reception polar curve contact side by described substrate
To form the first facet below piezo column；And
Form lead-in wire and cover described connection electrode and described first facet to connect described connection electrode and described reception
Polar curve contact.
In some embodiments, described manufacture method further comprises the steps of:
Formed at the piezo column being connected with one end of described transmitting polar curve and launch polar curve contact.
In some embodiments, the described lead-in wire that formed is connected electrode with the described reception polar curve of connection with described and connect institute
State transmitting polar curve and include sub-step with the described step being connected electrode:
It is cut to from bottom to top form described transmitting polar curve contact in described transmitting polar curve contact side by described substrate
To form the second facet below piezo column；And
Form lead-in wire and cover described connection electrode and described second facet to connect described connection electrode and described transmitting
Polar curve contact.
The sensor probe of embodiment of the present invention and manufacture method, will receive polar curve by lead-in wire and launch polar curve guiding
To substrate bottom surface, increase the contact area of contact conductor contact by connecting electrode, and then in the envelope of ultrasonic fingerprint sensor
Dress manufacture in, utilize connect electrode and lead-in wire with circuit board be attached technique so that sensor probe be prone to exactly with electricity
The conducting of road plate, thus realize that contact conductor contact separation is little, the making of high-resolution sensor probe.
The additional aspect of the present invention and advantage will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage are from combining the accompanying drawings below description to embodiment and will become
Obtain substantially with easy to understand, wherein:
Fig. 1 is the manufacture method schematic flow sheet of the sensor probe of embodiment of the present invention.
Fig. 2 is the schematic cross-section of the sensor probe of embodiment of the present invention.
Fig. 3 is the side schematic view of the piezoelectric layer of embodiment of the present invention.
Fig. 4 is the piezo column schematic perspective view of embodiment of the present invention.
Fig. 5 is the piezoelectric layer schematic diagram of fabrication technology of embodiment of the present invention.
Fig. 6 is the transmitting polar curve of embodiment of the present invention and receives polar curve schematic diagram of fabrication technology.
Fig. 7 is the manufacture method schematic flow sheet of the sensor probe of another embodiment of the present invention.
Fig. 8 is the reception polar curve contact schematic diagram of fabrication technology of embodiment of the present invention.
Fig. 9 is the reception polar curve contact of embodiment of the present invention and launches polar curve bank of contacts cloth schematic diagram.
Figure 10 is the manufacture method schematic flow sheet of the sensor probe of a further embodiment of this invention.
Figure 11 is up-protective layer and the lower protective layer schematic diagram of fabrication technology that the present invention implements embodiment.
Figure 12 is the pad manufacturing process schematic diagram that the present invention implements embodiment.
Figure 13 is the substrate manufacturing process schematic diagram that the present invention implements embodiment.
Figure 14 is the manufacture method schematic flow sheet of the sensor probe of a further embodiment of this invention.
Figure 15 is the connection electrode manufacturing process schematic diagram of embodiment of the present invention.
Figure 16 is the connection electrode arrangements schematic diagram of embodiment of the present invention.
Figure 17 is the manufacture method schematic flow sheet of the sensor probe of a further embodiment of this invention.
Figure 18 to Figure 19 is the lead-in wire schematic diagram of fabrication technology of embodiment of the present invention.
Figure 20 is the manufacturing method of protective layer schematic diagram of embodiment of the present invention.
Figure 21 is the stannum ball schematic diagram of fabrication technology of embodiment of the present invention.
Figure 22 is the schematic cross-section of the sensor probe encapsulation of embodiment of the present invention.
Figure 23 is the stannum ball arrangement schematic diagram of embodiment of the present invention.
Figure 24 is the sensor probe application schematic diagram of embodiment of the present invention.
Main element symbol description:
Sensor probe 100, piezoelectric layer 10, piezo column 12, implant 14, receive polar curve 20, receive polar curve contact 22, on
Protective layer 24, pad 26, transmitting polar curve 30, transmitting polar curve contact 32, colloid 33, lower protective layer 34, substrate 40, connection electrode
50, lead-in wire 60, covering part 62, connecting portion 64, protective layer 66, stannum ball 70.
Detailed description of the invention
Embodiments of the present invention are described below in detail, and the example of described embodiment is shown in the drawings, the most ad initio
Represent same or similar element to same or similar label eventually or there is the element of same or like function.Below by ginseng
The embodiment examining accompanying drawing description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it is to be understood that term " " center ", " longitudinally ", " laterally ", " length ", " width ",
" thickness ", " on ", D score, "front", "rear", "left", "right", " vertically ", " level ", " top ", " end ", " interior ", " outward ", " up time
Pin ", the orientation of the instruction such as " counterclockwise " or position relationship be based on orientation shown in the drawings or position relationship, be for only for ease of
Describe the present invention and simplification description rather than instruction or the device of hint indication or element must have specific orientation, Yi Te
Fixed azimuth configuration and operation, be therefore not considered as limiting the invention.Additionally, term " first ", " second " are only used for
Purpose is described, and it is not intended that indicate or imply relative importance or the implicit quantity indicating indicated technical characteristic.
Thus, define " first ", the feature of " second " can express or implicitly include one or more described features.?
In description of the invention, " multiple " are meant that two or more, unless otherwise expressly limited specifically.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " is installed ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be fixing connection, it is also possible to be to removably connect, or be integrally connected；Can
Be mechanically connected, it is also possible to be electrical connection or can mutually communication；Can be to be joined directly together, it is also possible to by between intermediary
Connect connected, can be connection or the interaction relationship of two elements of two element internals.Ordinary skill for this area
For personnel, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score
Can include that the first and second features directly contact, it is also possible to include that the first and second features are not directly contact but by it
Other characterisation contact between.And, fisrt feature second feature " on ", " top " and " above " include that first is special
Levy directly over second feature and oblique upper, or be merely representative of fisrt feature level height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " below " include that fisrt feature immediately below second feature and obliquely downward, or is merely representative of
Fisrt feature level height is less than second feature.
Following disclosure provides many different embodiments or example for realizing the different structure of the present invention.In order to
Simplifying disclosure of the invention, hereinafter parts and setting to specific examples are described.Certainly, they are the most merely illustrative, and
And be not intended to limit the present invention.Additionally, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, between itself not indicating discussed various embodiment and/or arranging
Relation.Additionally, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art are permissible
Recognize the application of other techniques and/or the use of other materials.
Refer to Fig. 1, the manufacture method of embodiment of the present invention, visit for manufacturing the sensor of ultrasonic fingerprint sensor
Head.Manufacture method comprises the steps:
S10: form piezoelectric layer, piezoelectric layer includes multiple piezo columns of arrangement in array；
S20: being formed at a plurality of reception polar curve above piezoelectric layer, every receives polar curve and connects with corresponding string piezo column；
S30: be formed at a plurality of transmitting polar curve below piezoelectric layer, launch polar curve for every and connect with corresponding a line piezo column；
S40: launching adhesion substrate below polar curve；
S50: be connected electrode with launching the formation of polar curve opposing side at substrate；And
S60: formation lead-in wire receives polar curve to connect and is connected electrode and connects transmitting polar curve and be connected electrode.
Referring to Fig. 2, the sensor probe 100 of embodiment of the present invention, for ultrasonic fingerprint sensor.Sensor is visited
100 include: piezoelectric layer 10, receive polar curve 20, launch polar curve 30, substrate 40, connect electrode 50 and electroplate lead wire 60.Piezoelectric layer
10 include multiple piezo columns 12 of arrangement in array.Receiving polar curve 20 include a plurality of and be formed at above piezoelectric layer 10, every connects
Receive polar curve 20 to connect with corresponding string piezo column 12.Launch polar curve 30 include a plurality of and be formed at below piezoelectric layer 10, send out for every
Emitter-base bandgap grading line 30 connects with corresponding a line piezo column 12.Substrate 40 is used for carrying transmitting polar curve 30, piezoelectric layer 10 and receiving polar curve 20.
Connect electrode 50 be formed at substrate 40 and launch the opposing side of polar curve 30.Lead-in wire 60 is used for connecting reception polar curve 20 and being connected electrode
50 and connect and launch polar curve 30 and be connected electrode 50.
The manufacture method of embodiment of the present invention can be used for manufacturing the sensor probe 100 of embodiment of the present invention.
The sensor probe 100 of embodiment of the present invention and manufacture method thereof, will receive polar curve 20 by lead-in wire 60 and send out
Emitter-base bandgap grading line 30 guides to substrate 40 bottom surface, increases the contact area of contact conductor contact by connecting electrode 50, and then ultrasonic
During the encapsulation of ripple fingerprint sensor manufactures, connection electrode 50 and lead-in wire 60 is utilized to be attached technique with circuit board so that sensing
Device probe 100 is prone to turn on circuit board exactly, thus realizes contact conductor contact separation sensor little, high-resolution and visit
The making of 100.
Below as a example by manufacturing single sensor probe 100, manufacturing process and structure are explained.
Referring to Fig. 3 to Fig. 5, specifically, in some embodiments, piezoelectric layer 10 includes multiple pressures of arrangement in array
Electricity post 12 and implant 14.
Wherein, implant 14 is for filling the gap formed between multiple piezo column 12.
In some embodiments, piezoelectric layer 10 can use piezoelectric, such as piezoelectric ceramics etc..Piezo column 12 can lead to
Cross and block piezoelectric is carried out cutting formation.In some instances, the piezo column 12 of formation arranges in array, such as can be in
Matrix arrangement.So, arranged in arrays it is prone to technique manufacture, reduces cost.Specifically, as a example by arranged in arrays, at processing procedure
In can have certain thickness cutter sweep by use and cut to piezoelectric with first direction, and according to piezo column
The design requirement of 12 numbers, repeats cutting action until the cutting of first direction completes.
Specifically, the thickness of cutter sweep that is to say the gap ultimately formed between piezo column 12, the degree of depth of cutting namely
It is ultimately formed the height of piezo column 12.Generally can select suitable gap according to the design requirement making sensor probe 100
And height dimension.
It is preferred that in some examples, for meeting the demand such as larger than 508DPI of sensor probe 100 sampling resolution
(Dots per Inch, what per inch was printed counts), the gap between piezo column 12 can be 50 microns.When gap is more than
When 50 microns, sampling resolution will reduce, and launches or the ultrasonic signal that receives will die down, thus cannot accurately know
Other fingerprint.
It should be noted that the thickness of piezoelectric should be more than the height of the piezo column 12 ultimately formed, to facilitate system
The carrying out of journey technique, in other words, when cutting, cuts according to the design size demand of piezo column 12, and when cutting, the end
Portion need to keep continuous.
After cutting in a first direction completes, for forming piezo column 12 arranged in arrays, need to be different with first direction
Second direction on cut, such as second direction can be orthogonal with first direction.With the cutting phase on first direction
Similar, complete the cutting in second direction according to the design requirement of piezo column 12, intercolumniation gap etc..After having cut, piezoresistive material
Material include top by cutting multiple piezo columns 12 of generation, bottom is continuous portion.
So, multiple piezo column 12 can be cut out according to design requirement.
Specifically, in some embodiments, each piezo column 12 has rectangular cross section, and width is 30 microns, highly
For 70-80 micron.
So, sensor probe 100 can be met resolution is used for height, be greater than the demand of 508DPI, certainly,
In different designs, the size of piezo column 12 is also by difference.
Referring to Fig. 3, further, the continuous portion that the piezoelectric bottom after cutting is formed is clout, need to carry out
Remove.If being worked on raw material, then dispersion cannot be formed piezoelectric layer 10 by piezo column 12, therefore, is continuing
Need before cutting to be filled the gap formed between piezo column after cutting twice 12 by implant 14.
So, multiple piezo column 12 viscosity can be connected, so by clout abrade thus form piezoelectric layer 10.
In some embodiments, implant can be black glue material.Can be such as black glue epoxy resin, black glue epoxy
Resin is insulant, and it has the resistance to dissolubility of good heatproof, and solidifies rear surface light, and cementability is strong.
So, by black glue material so that adhesion good between multiple piezo column 12, and piezoelectric layer 10 is had
There is good mechanicalness.
Additionally, implant 14 is also to be that other have non-conductive and that non-depressed is electrical material simultaneously, do not limit at this.
Refer to Fig. 6, further, after forming piezoelectric layer 10, electrode wires will be carried out on the upper and lower surface of piezoelectric layer 10
Making technology.
Specifically, in some embodiments, sputtering process can be used to form upper strata and lower floor's polar curve circuit.
Sputtering process utilizes electronics or superlaser bombardment target, and makes target material surface component with atomic group or ionic species
Sputter out, and be finally deposited in substrate surface, experience film forming procedure, ultimately form thin film.
It is preferred that in some examples, select silver as target, formed by sputtering process and be positioned at above piezoelectric layer 10
Receive polar curve 20 and be positioned at the transmitting polar curve 30 below piezoelectric layer 10.
Specifically, in some embodiments, the thickness receiving polar curve 20 and transmitting polar curve 30 is 2.5 microns.
So, can make to receive polar curve 20 and launch the thickness of polar curve 30 to meet process requirements good electrical to ensure
Energy.
More specifically, when the piezo column 12 matrix arrangement in m*n, every string piezo column 12 upper surface forms a reception
Polar curve 20, in other words, will form n bar above piezoelectric layer 10 and receive polar curve 20.And often a line piezo column 12 lower surface is formed
Article one, launch polar curve 30, in other words, launch polar curve 30 at piezoelectric layer 10 m formed below bar.
Need arranged in a crossed manner it should be noted that launch polar curve 30 with receiving polar curve 20, in other words, launch polar curve 20 and
Receive polar curve 30 can not be arranged in parallel, for example, it is possible to be vertically arranged.
It is arranged such, launches polar curve 20 and intersect with receiving polar curve 30, can be used for by object close to piezoelectric layer 10
Or contact with piezoelectric layer 10 and to launch and to receive signal.
Specifically, can be used to launch and received ultrasonic signal.When hands is near to or in contact with piezoelectric layer 10, piezoelectric
Change, when the frequency of change is more than frequency of sound wave, such as 10-20 megahertz, ultrasonic signal, ultrasonic signal will be produced
Being launched along finger orientation by launching polar curve 30, the ultrasonic signal reflected by finger can be received polar curve 20 and be received.And then fingerprint
Sensor can be according to the difference identification fingerprint between the signal launched and receive.
More specifically, be arranged at piezoelectricity when the voltage of the resonant frequency having in ultrasound wave frequency band puts on from outside
When the transmitting polar curve 30 of two apparent surfaces of layer 10 and reception polar curve 20, piezoelectric layer 10 will produce ultrasonic signal.
About ultrasonic signal, when finger is not in contact with or during close to piezoelectric layer 10, owing to air and being used for is launched ultrasonic
The difference of the acoustic impedance between the piezoelectric layer 10 of ripple signal, can return from the major part launching the ultrasonic signal that polar curve 30 is launched
To receiving polar curve rather than through the interface piezoelectric layer 10 and air.
Meanwhile, when finger is near to or in contact with piezoelectric layer 10, from the part launching the ultrasonic signal that polar curve 30 is launched
The incoming finger in interface through the skin and piezoelectric layer 10 of finger.Therefore, the intensity of the signal reflecting and returning is lowered,
Make it possible to fingerprint pattern be detected.
Although user is with the naked eye difficult to the pattern of fingerprint, fingerprint can have a lot of crestal line and the figure of valley line repetition
Case.When crestal line and valley line repeat, the height between crestal line and valley line can change.Therefore, piezoelectric layer 10 not with the paddy of fingerprint
Direct skin contact at line, but can with the crestal line of fingerprint at direct skin contact.
Therefore, it is launched into from the ultrasonic signal launching polar curve 30 transmitting of the piezoelectric layer 10 of the valley line corresponding to fingerprint
Outside, and major part ultrasonic signal is by towards internal reflection, and received by receiving polar curve 20.And from the ridge corresponding to fingerprint
The ultrasonic signal launching polar curve 30 transmitting of line passes the boundary face of finger and is reflected so that receive the super of polar curve 20 reception
The intensity of acoustic signals significantly reduces.
Therefore, according to valley line and the crestal line of the fingerprint in piezoelectric layer 10, can by measure ultrasonic signal intensity or
Reflection coefficient detects fingerprint pattern, and the reflection of ultrasonic signal and reception are the difference due to acoustic impedance.
Refer to Fig. 7, further, prepare for subsequent encapsulating process, need to be first by the receiving pole above piezoelectric layer 10
Line 20 guides to piezoelectric layer 10, and in some embodiments, manufacture method includes step:
S70: form perforation at the piezo column being connected with the one end receiving polar curve from top to bottom to guide reception polar curve to pass through
Wear piezo column and at piezo column reception formed below polar curve contact.
Refer to Fig. 8, in concrete manufacture process, can make a reservation for according to design requirement on uncut piezoelectric
First position makes perforation, easily operated compared to completing laggard eleven punch 11 at cutting piezo column 12.Can certainly be in cutting
Become the laggard eleven punch 11 of piezo column 12, do not limit at this.
It should be noted that only need side outlet owing to receiving polar curve 20, every reception polar curve 20 only needs to select in other words
One end is as contact, therefore during making perforation, can select, according to the connecting point position of actual design, the pressure that carries out boring a hole
Electricity post 12, for example, it is possible to select perforation in the both sides that matrix arrangement is relative, naturally it is also possible to perforation is all placed in side.
Specifically, perforation uses electrosilvering technique to make, and so can will be located in the reception polar curve 20 above piezoelectric layer 10 and lead to
The electrosilvering crossing perforation is conducted to the lower section of piezoelectric layer 10, and at the piezo column 12 reception formed below polar curve contact 22 of perforation.
It should be noted that will no longer arrange transmitting polar curve 30 below a line forming perforation or two row piezo columns 12,
Short circuit is caused to prevent from connecting between polar curve.
Referring to Fig. 9, analogously, the transmitting polar curve 30 below piezoelectric layer 10 needs also exist for forming contact, that is to say and sends out
Emitter-base bandgap grading line contact 32.
Referring to Figure 10, specifically, in some embodiments, manufacture method further comprises the steps of:
S80: formed at the piezo column being connected with the one end launching polar curve and launch polar curve contact.
Similarly, launching polar curve 30 the most only needs side outlet, and therefore the optional either end of polar curve 30 of launching is as sending out
Emitter-base bandgap grading line contact 32.
Refer to Figure 11, further, for protecting the naked reception polar curve 20 being exposed on the external and launching polar curve 30, real at some
Executing in mode, manufacture method also includes: is formed and covers the up-protective layer receiving polar curve；And/or formed under covering transmission polar curve
Protective layer.
In some embodiments, sensor probe 100 farther includes up-protective layer 24 and/or lower protective layer 34.On
Protective layer 24 covers and receives polar curve 20, and lower protective layer 34 covers and launches polar curve 30.
So, polar curve can be played a protective role by the design of protective layer, and then ensures the electrical of sensor probe 100
Energy.
It is preferred that up-protective layer 24 and lower protective layer 34 can use SU8 material, thus reach insulation and protect polar curve
Effect.
It should be noted that due in follow-up encapsulation procedure, need to by contact by sensor probe 100 with on circuit board
Corresponding contact is electrically connected, and therefore protective layer should dodge transmitting polar curve contact 32 and reception polar curve contact 22 is arranged.
In the industrial production, it usually needs high-volume produces many sensor probes 100 simultaneously, such as 1000-2000.
Therefore can carry out the manufacture of many sensor probes 100 on the piezoelectric materials, to form sensor probe array simultaneously.
Concrete manufacturing step is explained with reference to above-mentioned manufacture method as a example by single sensor probe 100 and structure
Bright, here is omitted.Generally, can choose block piezoelectric and be fabricated to circular piezoelectric wafer, its radial dimension is 8 inches
Or 12 inches.
Further, in some embodiments, manufacture method further comprises the steps of:
Pad is formed above up-protective layer.
Referring to Figure 12, specifically, pad 26 can be glass or silicon chip etc..Pad 26 can pass through colloid and up-protective layer
24 viscosity connect, for strengthening the integral hardness of sensor probe 100 to facilitate the carrying out of subsequent manufacturing procedures.In some examples
In, the thickness of pad 26 can be 6-7 times of sensor probe 100 thickness.
Refer to Figure 13, further, for carrying sensor probe 100, need to launch below polar curve 30, lower guarantor in other words
Adhesion substrate 40 below sheath 34.
In some embodiments, substrate 40 can be glass.
So, substrate 40 can be as the element above carrier carrying, for launching polar curve 30, piezoelectric layer 10 and receiving pole
Line 20 is played a supporting role.
Specifically, due to piezoelectric layer 10 reception formed below polar curve contact 22, polar curve contact 32, and lower protective layer are launched
34, therefore it is not plane, need to be filled and led up by colloid 33 and carry out adhesion with substrate 40.The thickness of glue-line is 5-10 micron.
The thickness of substrate 40 can be chosen according to global design demand, in some embodiments, and the thickness of substrate
It can be 100-300 micron.
Such as, in some instances, global design demand is relatively thin, then substrate thickness can be 100-150 micron, and simultaneously
Need in view of substrate 40 as the flintiness of carrier, it is also possible to thicken to 150-300 micron, interval at the thickness of 150-300
In, glass has good bearing capacity.
Needing explanatorily, different from up-protective layer 24 and lower protective layer 34, pad 26 and substrate 40 need to all cover whole
The upper surface of probe and lower surface, and without dodging reception polar curve contact 22 and launching polar curve contact 32.
Further, for being directed to below substrate 40 by reception polar curve 20 and transmitting polar curve 30, in other words, polar curve will be received
Contact 22 and transmitting polar curve contact 32 are directed to below substrate 40, such that it is able to effectively turn on circuit board, and need to be at substrate 40
Lower section carries out related process.
Referring to Figure 14, in some embodiments, step S50 farther includes sub-step:
S52: form metal level with launching the opposing side of polar curve at substrate；
S54: formed respectively at metal level and receive polar curve and launch the connection electrode that polar curve is corresponding.
Refer to Figure 15 and Figure 16, specifically, below substrate 40, first electroplate layer of metal layer, and then pass through etch gold
Belong to layer and form connection electrode 50, connect electrode 50 and there is circular cross section.
Each reception polar curve contact 22 and the most corresponding one of transmitting polar curve contact 32 connect electrode 50, with in follow-up manufacture
After step, reception polar curve contact 22 can be respectively communicated with by connecting electrode 50 and launch polar curve contact 32.Therefore, substrate 40 times
Side connects the array of electrode 50 by being formed.The number connecting electrode 50 of every sensor probe 100 is this sensor probe 100
Receive polar curve contact 22 and launch polar curve contact 32 number summation.
Covered by substrate 40 owing to receiving polar curve contact 22 and transmitting polar curve contact 32, and to make contact and being connected electricity
Pole 50 connects, it is required that reception polar curve contact 22 and transmitting polar curve contact 32 are the most exposed out, and then passes through related process
It is attached.
Referring to Figure 17, in some embodiments, step S60 includes sub-step:
S62: be cut to from bottom to top be formed under the piezo column receiving polar curve contact in reception polar curve contact side by substrate
Side is to form the first facet；And
S64: form lead-in wire and cover connection electrode and the first facet to connect electrode and to receive polar curve contact.
In some embodiments, step S60 includes sub-step:
S66: be cut to from bottom to top be formed under the piezo column launching polar curve contact in transmitting polar curve contact side by substrate
Side is to form the second facet；And
S68: form lead-in wire and cover connection electrode and the second facet to connect electrode and to launch polar curve contact.
It is appreciated that as polar curve contact 22 is received in above-mentioned docking and launches knowable to the explanation that polar curve limit 24 is formed, connects
Point will be formed in below the piezo column 12 of piezoelectric layer 10 surrounding.Therefore, for making contact the most exposed, substrate 40 will be cut
Cut.
Refer to Figure 18, specifically, for receiving polar curve contact 22 side, substrate 40 can be existed in the way of employing is cut sth. askew
Receive polar curve contact 22 side to be cut to from bottom to top below the piezo column 12 of formation reception polar curve contact 22 cut with formation first
Face.Certainly, if multiple reception polar curve contact 22 be respectively formed in below piezoelectric layer 10 relative to both sides, then both sides need to be entered respectively
Row cutting.
Analogously, for launching polar curve contact 32 side, substrate 40 is cut from bottom to top in transmitting polar curve contact 32 side
Cut to being formed below the piezo column 12 launching polar curve contact 32 to form the second facet.If multiple transmitting polar curve contacts 32 are respectively
Be formed at below piezoelectric layer 10 relative to both sides, then both sides need to be cut respectively.
Need explanatorily, when cutting it should be noted that, the lower section being cut to piezo column 12 makes contact exposed, and not
Piezo column 12 part should be cut to.
So, by making, the contact covered by substrate 40 is the most exposed, for be connected electrode 50 connect prepare.
Refer to Figure 19, further, after dicing, use the techniques such as plating or jet-plating metallization to form lead-in wire 60 with to even
Receiving electrode 50 and contact are attached.In some embodiments, lead-in wire 60 includes covering part 62 and connecting portion 64.Covering part 62
Cover and connect electrode 50, and connecting portion 64 is connected with covering part 62, and cover facet and contact.In the fabrication process, cover
Portion 62 and connecting portion 64 are once formed.
So, will make to connect electrode 50 to be connected with contact.
It is preferred that lead-in wire 60 can select the material such as gold, silver or nickel.
Referring to Figure 20, further, the electroplate lead wire 60 of formation is still in naked state, therefore, is exposed on the external naked
Lead-in wire 60 surface-coated protective layer 66.
Need explanatorily, when armor coated 66, can the whole exposed part of electroplate lead wire 60 all be covered,
And the covering part 62 covering connection electrode 50 will be used for further and circuit board turns on, therefore, it should carry out protective layer 66
Process.
Specifically, position to be processed can needed, remove the position of protective layer in other words, that is to say and coat at covering part 62
Photoresist, by being exposed at coating processing, so so that covering part 62 exposes again.
Refer to Figure 21, further, be attached with circuit board for convenience of follow-up, in some embodiments, manufacture
Method can include step:
Stannum ball is implanted at covering part.
In some embodiments, sensor probe 100 also includes that stannum ball 70, stannum ball 70 cover covering part 62.
So, it is possible to use stannum ball forms pad, facilitate and follow-up weld with circuit board.Form the process of stannum ball 70
Can be placement material stannum at covering part 62, after pyroprocess and cooling procedure, form stannum ball 70.
Referring to Figure 22 and Figure 23, so far, the manufacturing process of sensor probe 100 is basically completed, can be by abovementioned steps
Pad 26 remove, simultaneously will be used for adhesion up-protective layer 24 and pad 26 colloid remove.
Further, sensor probe array is cut into single sensor probe 100, so, forms single sensor
BGA (Ball Grid Array, the BGA) encapsulation of probe 100.
Refer to Figure 24, after single sensor probe 100 has manufactured, filled with the electronics applying it by up-protective layer 24
The cover plate putting such as mobile phone or panel computer is fitted, and specifically, sensor probe 100 will be pasted on below cover plate.
In sum, the BGA package of single sensor probe 100 can be formed by the description of above-mentioned manufacturing process, due to
The polar curve contact that will be located in piezoelectric layer 10 surrounding guides to substrate 40 so that whole substrate 40 region is used equally to the company of being formed
Receiving electrode 50 is also connected with the contact of circuit board by lead-in wire 60, it is achieved thereby that the rewiring of polar curve, it will be understood that compare
In being turned on circuit board by the polar curve contact of piezoelectric layer 10 surrounding, after rewiring, the available space of polar curve contact will be aobvious
Write and become big, for polar curve contact separation less in the case of, connection electrode position can be set flexibly and turn on contact, be effectively improved by
The too small problem being connected difficulty with circuit board in polar curve contact separation.Additionally, due to making technology only enters below piezoelectric layer 10
OK, therefore, the width dimensions of sensor probe 100 can't dramatically increase.
In the description of this specification, reference term " embodiment ", " some embodiments ", " schematically implement
Mode ", " example ", the description of " concrete example " or " some examples " etc. mean to combine described embodiment or example describes
Specific features, structure, material or feature are contained at least one embodiment or the example of the present invention.In this specification
In, the schematic representation of above-mentioned term is not necessarily referring to identical embodiment or example.And, the concrete spy of description
Levy, structure, material or feature can combine in any one or more embodiments or example in an appropriate manner.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include at least one this feature.In describing the invention, " multiple " are meant that at least two, such as two, three
Individual etc., unless otherwise expressly limited specifically.
Although above it has been shown and described that embodiments of the present invention, it is to be understood that above-mentioned embodiment is
Exemplary, it is impossible to being interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be right
Above-mentioned embodiment is changed, revises, replaces and modification.
Claims (17)
1. a sensor probe, for ultrasonic fingerprint sensor, it is characterised in that described sensor probe includes:
Piezoelectric layer, described piezoelectric layer includes multiple piezo columns of arrangement in array；
Being formed at a plurality of reception polar curve above described piezoelectric layer, every receives polar curve and connects with piezo column described in corresponding string；
It is formed at a plurality of transmitting polar curve below described piezoelectric layer, launches polar curve for every and connect with piezo column described in corresponding a line；
Substrate, is used for carrying described transmitting polar curve, described piezoelectric layer and described transmitting polar curve；
It is formed at the connection electrode of described substrate and the described opposing side of transmitting polar curve；And
Lead-in wire, is used for connecting described reception polar curve and is connected electrode with described and connect described transmitting polar curve and be connected electrode with described.
2. sensor probe as claimed in claim 1, it is characterised in that described piezoelectric layer also includes for filling the plurality of
The implant in the gap formed between piezo column.
3. sensor probe as claimed in claim 2, it is characterised in that described implant includes black glue material.
4. sensor probe as claimed in claim 1, it is characterised in that each described piezo column has rectangular cross section, wide
Degree is 30 microns, and height is 70-80 micron.
5. sensor probe as claimed in claim 1, it is characterised in that the thickness of described reception polar curve be 2.5 microns and/or
The thickness launching polar curve is 2.5 microns.
6. sensor probe as claimed in claim 1, it is characterised in that described substrate includes glass.
7. sensor probe as claimed in claim 1, it is characterised in that described substrate thickness is 100-300 micron.
8. sensor probe as claimed in claim 1, it is characterised in that described sensor probe also include following at least
One:
Be formed as covering the up-protective layer of described reception polar curve；
Be formed as covering the lower protective layer of described transmitting polar curve, described lower protective layer and described substrate adhesion.
9. sensor probe as claimed in claim 1, it is characterised in that described lead-in wire includes: be formed as covering described connection
The covering part of electrode；And
Be formed as connecting described covering part and described reception polar curve and the connecting portion being connected described covering part and described transmitting polar curve.
10. sensor probe as claimed in claim 9, it is characterised in that described sensor probe also include following in extremely
Few one:
Be formed as covering the protective layer of described connecting portion；
Be formed as covering the stannum ball of described covering part.
11. 1 kinds of manufacture methods, for manufacturing the sensor probe of ultrasonic fingerprint sensor, it is characterised in that include following
Step:
Forming piezoelectric layer, described piezoelectric layer includes multiple piezo columns of arrangement in array；
Forming a plurality of reception polar curve above described piezoelectric layer, every receives polar curve and connects with piezo column described in corresponding string；
At described piezoelectric layer a plurality of transmitting polar curve formed below, launch polar curve for every and connect with piezo column described in corresponding a line；
Adhesion substrate below described transmitting polar curve；
It is connected electrode with the formation of described transmitting polar curve opposing side at described substrate；And
Form lead-in wire and be connected electrode to connect described reception polar curve with described and connect described transmitting polar curve and be connected electrode with described.
12. manufacture methods as claimed in claim 11, it is characterised in that described manufacture method also include following at least one
Individual step:
Form the up-protective layer covering described reception polar curve；
Form the lower protective layer covering described transmitting polar curve, described lower protective layer and described substrate adhesion.
13. manufacture methods as claimed in claim 11, it is characterised in that described described substrate with launch the opposing side of polar curve
Formed and connect the step of electrode and include sub-step:
Metal level is formed with launching the opposing side of polar curve at described substrate；And
The connection electrode corresponding with described reception polar curve and described transmitting polar curve is formed respectively at described metal level.
14. manufacture methods as claimed in claim 11, it is characterised in that described manufacture method further comprises the steps of:
Perforation is formed from top to bottom to guide described reception polar curve to pass through at the piezo column being connected with one end of described reception polar curve
Wear described piezo column and at described piezo column reception formed below polar curve contact.
15. manufacture methods as claimed in claim 14, it is characterised in that described formation lead-in wire with connect described reception polar curve with
Described connection electrode and connect described transmitting polar curve and include sub-step with the described step being connected electrode:
Described substrate is cut to be formed the piezoelectricity of described reception polar curve contact from bottom to top in described reception polar curve contact side
To form the first facet below post；And
Form lead-in wire and cover described connection electrode and described first facet to connect described connection electrode and described reception polar curve
Contact.
16. manufacture methods as claimed in claim 11, it is characterised in that described manufacture method further comprises the steps of:
Formed at the piezo column being connected with one end of described transmitting polar curve and launch polar curve contact.
17. manufacture methods as claimed in claim 16, it is characterised in that described formation lead-in wire with connect described reception polar curve with
Described connection electrode and connect described transmitting polar curve and include sub-step with the described step being connected electrode:
Described substrate is cut to be formed the piezoelectricity of described transmitting polar curve contact from bottom to top in described transmitting polar curve contact side
To form the second facet below post；And
Form lead-in wire and cover described connection electrode and described second facet to connect described connection electrode and described transmitting polar curve
Contact.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610801759.9A CN106295625A (en) | 2016-09-05 | 2016-09-05 | Sensor probe and manufacture method thereof |
| US15/489,837 US10387706B2 (en) | 2016-09-05 | 2017-04-18 | Ultrasonic transducer of ultrasonic fingerprint sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610801759.9A CN106295625A (en) | 2016-09-05 | 2016-09-05 | Sensor probe and manufacture method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106295625A true CN106295625A (en) | 2017-01-04 |
Family
ID=57711112
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610801759.9A Withdrawn CN106295625A (en) | 2016-09-05 | 2016-09-05 | Sensor probe and manufacture method thereof |
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| CN (1) | CN106295625A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403135A (en) * | 2017-06-15 | 2017-11-28 | 麦克思商务咨询(深圳)有限公司 | Ultrasonic wave sensing module, its manufacture method and electronic installation |
| WO2018201853A1 (en) * | 2017-05-01 | 2018-11-08 | Shenzhen GOODIX Technology Co., Ltd. | Ultrasound fingerprint sensing and sensor fabrication |
| CN109494296A (en) * | 2017-09-12 | 2019-03-19 | 南昌欧菲生物识别技术有限公司 | The preparation method of the polarization method and ultrasonic wave biological identification device of polarization jig and piezoelectric layer |
| CN110188674A (en) * | 2019-05-29 | 2019-08-30 | 霸州市云谷电子科技有限公司 | Fingerprint recognition mould group, touch-control display panel and display device |
| CN111359861A (en) * | 2020-01-15 | 2020-07-03 | 中国科学院微电子研究所 | Ultrasonic transducer array |
| CN113196280A (en) * | 2019-09-27 | 2021-07-30 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint sensor device, method of operating an ultrasonic fingerprint sensor device and method of manufacturing an ultrasonic fingerprint sensor device |
-
2016
- 2016-09-05 CN CN201610801759.9A patent/CN106295625A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018201853A1 (en) * | 2017-05-01 | 2018-11-08 | Shenzhen GOODIX Technology Co., Ltd. | Ultrasound fingerprint sensing and sensor fabrication |
| US11263422B2 (en) | 2017-05-01 | 2022-03-01 | Shenzhen GOODIX Technology Co., Ltd. | Ultrasound fingerprint sensing and sensor fabrication |
| CN107403135A (en) * | 2017-06-15 | 2017-11-28 | 麦克思商务咨询(深圳)有限公司 | Ultrasonic wave sensing module, its manufacture method and electronic installation |
| CN107403135B (en) * | 2017-06-15 | 2020-12-15 | 业成科技（成都）有限公司 | Ultrasonic sensing module, manufacturing method thereof and electronic device |
| CN109494296A (en) * | 2017-09-12 | 2019-03-19 | 南昌欧菲生物识别技术有限公司 | The preparation method of the polarization method and ultrasonic wave biological identification device of polarization jig and piezoelectric layer |
| CN110188674A (en) * | 2019-05-29 | 2019-08-30 | 霸州市云谷电子科技有限公司 | Fingerprint recognition mould group, touch-control display panel and display device |
| CN113196280A (en) * | 2019-09-27 | 2021-07-30 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint sensor device, method of operating an ultrasonic fingerprint sensor device and method of manufacturing an ultrasonic fingerprint sensor device |
| CN113196280B (en) * | 2019-09-27 | 2024-03-19 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint sensor device, method of operating an ultrasonic fingerprint sensor device, and method of manufacturing an ultrasonic fingerprint sensor device |
| CN111359861A (en) * | 2020-01-15 | 2020-07-03 | 中国科学院微电子研究所 | Ultrasonic transducer array |
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Address after: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant after: Jiangxi OMS Microelectronics Co.,Ltd. Address before: 330013 no.1189 Jingdong Avenue, high tech Zone, Nanchang City, Jiangxi Province Applicant before: OFilm Microelectronics Technology Co.,Ltd. Address after: 330013 no.1189 Jingdong Avenue, high tech Zone, Nanchang City, Jiangxi Province Applicant after: OFilm Microelectronics Technology Co.,Ltd. Address before: 330013 no.1189 Jingdong Avenue, high tech Zone, Nanchang City, Jiangxi Province Applicant before: NANCHANG OFILM BIO-IDENTIFICATION TECHNOLOGY Co.,Ltd. |
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Application publication date: 20170104 |