CN206179874U - Shallow buried layer high pressure schottky rectifier - Google Patents
Shallow buried layer high pressure schottky rectifier Download PDFInfo
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- CN206179874U CN206179874U CN201621117036.9U CN201621117036U CN206179874U CN 206179874 U CN206179874 U CN 206179874U CN 201621117036 U CN201621117036 U CN 201621117036U CN 206179874 U CN206179874 U CN 206179874U
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Abstract
The utility model discloses a shallow buried layer high pressure schottky rectifier, its characterized in that: including a heavy doping conduction type substrate layer, a light dope conduction type epitaxial layer, the 2nd conductivity type protection annular area, the shallow buried layer of a conductivity type, schottky barrier layer, field dielectric layer, anodic metal layer and cathode metal layer. The 2nd conductivity type protection annular area covers the part surface on a light dope conductivity type epitaxial layer. The shallow buried layer of a conductivity type floats in vain inside a light dope conductivity type epitaxial layer. The shallow buried layer of a conductivity type and contact of the 2nd conductivity type protection annular area or contactless. The schottky barrier layer covers in part surface on the light dope conduction type epitaxial layer and the part surface on the 2nd conductivity type protection annular area. The field dielectric layer covers the part surface on a light dope conduction type epitaxial layer. Anodic metal layer covers on dielectric layer and schottky barrier layer.
Description
Technical field
This utility model is related to power semiconductor device technology field, and specifically a kind of shallow embedding floor height presses Schottky rectification
Device.
Background technology
Power semiconductor commutator, in being widely used in power converter and power supply.Two kinds of common high-voltage semi-conductors are whole
Stream device structure is respectively PIN high voltage rectifiers and Schottky high voltage rectifier.
Wherein PIN commutators forward voltage drop is big, and reverse recovery time is long, but it is less to leak electricity, and with superior high temperature
Stability, is mainly used in the mesohigh scope of more than 300V.
Schottky barrier rectifier is mainly used in the mesolow scope of below 200V, and its forward voltage drop is little, Reverse recovery
Time is short, but reverse leakage current is higher, and high temperature reliability is poor.
In the practical application of Schottky rectifier, except wanting to high-breakdown-voltage, low forward voltage drop and low-leakage current
Ask outer, high reliability is also requisite design requirement.Disclosed typical Schottky rectifier is high in order to realize
Shock resistance reliability, generally generally forms one layer of impurity concentration miscellaneous higher than the surface height of impurities concentration in surfaces of active regions
Matter concentration area.Such Schottky rectifier has high shock resistance reliability, but also just because of surface high impurity concentration area
Exist, its electric leakage rheology is big.
Utility model content
The purpose of this utility model is to solve the problems, such as that leakage current is big in prior art.
The technical scheme adopted to realize this utility model purpose is such, and a kind of shallow embedding floor height presses Schottky rectification
Device, it is characterised in that：Including heavy doping the first conductivity type substrate layer, the first conductive type epitaxial layer, second conductive is lightly doped
Type protection ring region, the first conduction type shallow embedding layer, schottky barrier layer, field dielectric layer, anode metal layer and cathode metal layer.
The heavy doping the first conductivity type substrate layer is covered on cathode metal layer.
First conductive type epitaxial layer that is lightly doped is covered on heavy doping the first conductivity type substrate layer.
The second conduction type protection ring region is covered in the part surface being lightly doped on the first conductive type epitaxial layer.
The first conduction type shallow embedding layer floating is in being lightly doped inside the first conductive type epitaxial layer.Described first is conductive
Type shallow embedding layer is protected ring region to contact or is not contacted with the second conduction type.
The schottky barrier layer is covered in the part surface and second being lightly doped on the first conductive type epitaxial layer and leads
Part surface on electric type protection ring region.
The field dielectric layer is covered in the part surface being lightly doped on the first conductive type epitaxial layer.
The anode metal layer is covered on dielectric layer and schottky barrier layer.
Further, the second conduction type protection ring region is the loop configuration of closed form.The zone line that annular is surrounded
For active area.
Further, the field dielectric layer is located at outside active area.The schottky barrier layer is located inside active area.
Further, the field dielectric layer is also covered in the part surface on the second conduction type protection ring region.The field
Dielectric layer is not contacted with the first conduction type shallow embedding layer.The field dielectric layer is not overlap with schottky barrier layer.
It is of the present utility model to have the technical effect that mathematical shallow embedding floor height pressure Schottky rectifier in this utility model
And preparation method thereof, on the premise of the product obtained by making keeps high-breakdown-voltage, low forward voltage drop and high impact-resistant reliability,
There is low-leakage current.
Description of the drawings
Fig. 1 is the cross-sectional view of new device 1 of this utility model embodiment；
Fig. 2 is the cross-sectional view of new device 2 of this utility model embodiment；
Fig. 3 is the new device forward characteristic contrast schematic diagram of this utility model embodiment；
Fig. 4 is the new device reverse characteristic curve contrast schematic diagram of this utility model embodiment；
In figure：The first conductivity type substrate of heavy doping layer 10, the first conductive type epitaxial layer 20, the second conductive-type is lightly doped
Type protection ring region 21, the first conduction type shallow embedding layer 22, schottky barrier layer 23, field dielectric layer 30, anode metal layer 40 and the moon
Pole metal level 50.
Specific embodiment
With reference to embodiment, the utility model is described in further detail, but should not be construed the above-mentioned master of this utility model
Topic scope is only limitted to following embodiments.It is common according to this area in the case of without departing from the above-mentioned technological thought of this utility model
Technological know-how and customary means, make various replacements and change, all should be included in protection domain of the present utility model.
Embodiment 1：
As shown in figure 1, the shallow embedding floor height pressure Schottky rectifier that the present embodiment makes, i.e., new device 1, it is characterised in that：
Including N+ types substrate layer 10, N-type epitaxy layer 20, p-type protection ring region 21, N-type shallow embedding layer 22, schottky barrier layer 23, field medium
Layer 30, anode metal layer 40 and cathode metal layer 50.First conduction type is N-type, and the second conduction type is p-type.
The N-type epitaxy layer 20 is covered on N+ types substrate layer 10.The N+ types substrate layer 10 is doping content 19 times
Arsenic impurities substrate more than side.The N-type epitaxy layer 20 is impurity concentration 2 × 1015cm-3Phosphorus impurities epitaxial layer.
The p-type protection ring region 21 is covered in the subregion of N-type epitaxy layer 20.P-type protection ring region 21 is the ring of closure
Shape structure, its circular zone line is referred to as active area.The p-type protection ring region 21 adopts dosage 3 × 1013cm-2Boron injection
1100 degree of annealing afterwards are formed.
The floating of N-type shallow embedding layer 22 and in active area, and protects ring region 21 inside N-type epitaxy layer 20 with p-type
Contact；The N-type shallow embedding layer 22 adopts dosage for 5 × 1011cm-2, energy is quick through high temperature after the arsenic injection of 1000KeV
Annealing is formed, and the condition of high annealing elects 1000 degrees Celsius, 30 seconds as.
The field dielectric layer 30 is covered in the part surface on N-type epitaxy layer 20.The field dielectric layer 30 is located at active
Outside area.The field dielectric layer 30 is also covered in the part surface on p-type protection ring region 21；The field dielectric layer 30 is shallow with N-type
Buried regions 22 is not contacted；The field dielectric layer 30 is not overlap with schottky barrier layer 23.About 1 micron of the field dielectric layer 30.
The schottky barrier layer 23 is covered on the part surface on N-type epitaxy layer 20 and p-type protection ring region 21
Part surface；The schottky barrier layer 23 is located in active area；The schottky barrier layer 23 is formed by platinum and silicon
Alloy constitute.
The anode metal layer 40 connects schottky barrier layer 23, meanwhile, the anode metal layer 40 also covers Jie on the scene
On matter layer 30.
The cathode metal layer 50 is located under N+ types substrate layer 10.
Fig. 3 gives the forward characteristic of the new device 1 of the present embodiment.Compared with conventional device, same anode current
Under, the forward conduction voltage of new device 1 is almost identical with the forward conduction voltage of conventional device, therefore new device maintain it is low
The characteristics of forward voltage drop.
Fig. 4 gives the reverse characteristic curve of new device 1.As can be seen that compared with conventional device, new device 1 is maintained
High-breakdown-voltage characteristic, and with relatively low leakage current.
Embodiment 2：
As shown in Fig. 2 the shallow embedding floor height that the present embodiment is produced presses Schottky rectifier, i.e., new device 2, its feature to exist
In：It is situated between including N+ types substrate layer 10, N-type epitaxy layer 20, p-type protection ring region 21, N-type shallow embedding layer 22, schottky barrier layer 23, field
Matter layer 30, anode metal layer 40 and cathode metal layer 50.First conduction type is N-type, and the second conduction type is p-type.
The N-type epitaxy layer 20 is covered on N+ types substrate layer 10.The N+ types substrate layer 10 is doping content 19 times
Arsenic impurities substrate more than side.The N-type epitaxy layer 20 is impurity concentration 2 × 1015cm-3Phosphorus impurities epitaxial layer.
The p-type protection ring region 21 is covered in the subregion of N-type epitaxy layer 20.P-type protection ring region 21 is the ring of closure
Shape structure, its circular zone line is referred to as active area.The p-type protection ring region 21 adopts dosage 3 × 1013cm-2Boron injection
1100 degree of annealing afterwards are formed.
The floating of N-type shallow embedding layer 22 inside N-type epitaxy layer 20, and in active area；The N-type shallow embedding layer 22 is bright
Aobvious protects ring region 21 not contact with p-type；The N-type shallow embedding layer 22 adopts dosage for 5 × 1011cm-2, energy is 1000KeV's
Formed through high temperature rapid thermal annealing after arsenic injection, the condition of high annealing elects 1000 degrees Celsius, 30 seconds as.
The field dielectric layer 30 is covered in the part surface on N-type epitaxy layer 20.The field dielectric layer 30 is located at active
Outside area.The field dielectric layer 30 is also covered in the part surface on p-type protection ring region 21；The field dielectric layer 30 is shallow with N-type
Buried regions 22 is not contacted；The field dielectric layer 30 is not overlap with schottky barrier layer 23.About 1 micron of the field dielectric layer 30.
The schottky barrier layer 23 is covered on the part surface on N-type epitaxy layer 20 and p-type protection ring region 21
Part surface；The schottky barrier layer 23 is located in active area；The schottky barrier layer 23 is formed by platinum and silicon
Alloy constitute.
The anode metal layer 40 connects schottky barrier layer 23, meanwhile, the anode metal layer 40 also covers Jie on the scene
On matter layer 30.
The cathode metal layer 50 is located under N+ types substrate layer 10.
It is illustrated in figure 3 the forward characteristic of the new device 1 and new device 2 made in embodiment.With conventional device phase
Than, under same anode current, the forward conduction voltage of new device is almost identical with the forward conduction voltage of conventional device, because
The characteristics of this new device maintains low forward voltage drop.
It is illustrated in figure 4 the reverse characteristic curve of the new device 1 and new device 2 made in embodiment.As can be seen that with it is normal
Rule device is compared, and new device maintains high-breakdown-voltage characteristic, and with relatively low leakage current.
Claims (4)
1. a kind of shallow embedding floor height presses Schottky rectifier, it is characterised in that：Including heavy doping the first conductivity type substrate layer (10),
Be lightly doped the first conductive type epitaxial layer (20), the second conduction type protection ring region (21), the first conduction type shallow embedding layer (22),
Schottky barrier layer (23), field dielectric layer (30), anode metal layer (40) and cathode metal layer (50)；
The heavy doping the first conductivity type substrate layer (10) is covered on cathode metal layer (50)；
First conductive type epitaxial layer (20) that is lightly doped is covered on heavy doping the first conductivity type substrate layer (10)；
Second conduction type protection ring region (21) is covered in the part being lightly doped on the first conductive type epitaxial layer (20)
Surface；
First conduction type shallow embedding layer (22) floating is internal in the first conductive type epitaxial layer (20) is lightly doped；Described first
Conduction type shallow embedding layer (22) protects ring region (21) to contact or do not contact with the second conduction type；
The schottky barrier layer (23) is covered in the part surface and being lightly doped on the first conductive type epitaxial layer (20)
Part surface on two conduction types protection ring region (21)；
The field dielectric layer (30) is covered in the part surface being lightly doped on the first conductive type epitaxial layer (20)；
The anode metal layer (40) is covered on dielectric layer (30) and schottky barrier layer (23).
2. a kind of shallow embedding floor height according to claim 1 presses Schottky rectifier, it is characterised in that：Second conductive-type
Type protects ring region (21) for the loop configuration of closed form；The zone line that annular is surrounded is active area.
3. a kind of shallow embedding floor height according to claim 1 and 2 presses Schottky rectifier, it is characterised in that：The field medium
Layer (30) is outside active area；The schottky barrier layer (23) is inside active area.
4. a kind of shallow embedding floor height according to claim 1 presses Schottky rectifier, it is characterised in that：The field dielectric layer
(30) part surface being also covered on the second conduction type protection ring region (21)；The field dielectric layer (30) is conductive with first
Type shallow embedding layer (22) is not contacted；The field dielectric layer (30) is not overlap with schottky barrier layer (23).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621117036.9U CN206179874U (en) | 2016-10-12 | 2016-10-12 | Shallow buried layer high pressure schottky rectifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621117036.9U CN206179874U (en) | 2016-10-12 | 2016-10-12 | Shallow buried layer high pressure schottky rectifier |
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| CN206179874U true CN206179874U (en) | 2017-05-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946373A (en) * | 2016-10-12 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of shallow embedding floor height pressure Schottky rectifier and its manufacture method |
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2016
- 2016-10-12 CN CN201621117036.9U patent/CN206179874U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946373A (en) * | 2016-10-12 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of shallow embedding floor height pressure Schottky rectifier and its manufacture method |
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