CN206040683U - Emitting diode with nanometer quantum dot layer - Google Patents
Emitting diode with nanometer quantum dot layer Download PDFInfo
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- CN206040683U CN206040683U CN201621063988.7U CN201621063988U CN206040683U CN 206040683 U CN206040683 U CN 206040683U CN 201621063988 U CN201621063988 U CN 201621063988U CN 206040683 U CN206040683 U CN 206040683U
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- nano
- emitting diode
- quantum dot
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- quantum
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000007788 roughening Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000012010 growth Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Abstract
The utility model belongs to the semiconductor field discloses an emitting diode with nanometer quantum dot layer, and it includes a substrate at least to and stack gradually in buffer layer, N type layer, luminescent layer and P type layer on the substrate, its characterized in that: emitting diode is still including being located the nanometer quantum dot layer that the quantum dot by the nanometer size on the P type layer is constituteed. The nanometer quantum dot is equivalent to P type layer carrying out the miniature roughening treatment of nanometer size, and furtherly more, quantum dot adopt highly doped mg and high component in's inGaN or inN to grow and form, because highly doped mg and high component in's existence for the contact resistance of quantum dot reduces, further makes the electric current homodisperse, and touch voltage reduces.
Description
Technical field
The utility model belongs to semiconductor applications, more particularly to a kind of using nano-quantum point as the luminous of p-type contact layer
Diode.
Background technology
With the continuous development of nitride LED technology, with photoelectric devices such as its light emitting diodes for preparing, it is widely used
Show in solid-state, illuminate and the field such as signal lamp.Although using gallium nitride based light emitting diode to substitute conventional light source as light source
Irreversible trend is become, but existing illumination and Display Technique will have been replaced completely, it is necessary to realized that higher electric light turns
Change efficiency.In problems, the contact resistance and contact voltage for how reducing device is key issue in the urgent need to address
One of.
The content of the invention
The utility model discloses a kind of light emitting diode with nano-quantum point layer, to reduce connecing for light emitting diode
Get an electric shock resistance and contact voltage, at least including a substrate, and stacks gradually cushion in the substrate, N-type layer, luminous
Layer and P-type layer, it is characterised in that：The light emitting diode also includes the quantum by nano-scale on the P-type layer
The nano-quantum point layer of point composition.
Preferably, the energy gap of the nano-quantum point is less than the P-type layer
Preferably, the nano-quantum point is InGaN or InN quantum dots.
Preferably, in InGaN the or InN quantum dots, In components are more than or equal to 50%.
Preferably, the quantum dot is p-type doping or n-type doping or undopes.
Preferably, the quantum dot is uniformly or non-uniformly distributed in the P-type layer.
Preferably, the distribution density of the quantum dot is less than or equal to 6 × 109cm-2。
Preferably, a diameter of 10 ~ 70nm of the quantum dot, is highly 3 ~ 20nm.
Preferably, the quantum dot adulterates for p-type, and p-type impurity is Mg.
Preferably, the impurity concentration of the Mg is more than or equal to 1 × 1019cm-3。
Preferably, the substrate is patterned substrate or plain film substrate.
Preferably, the cushion is AlN, AlInGaN, AlGaN or GaN.
InGaN the or InN quantum dots of the utility model deposition growing nano-scale on the P-type layer form nano-quantum point
Layer as contact layer, nano-quantum point equivalent to the miniature roughening treatment for carrying out nano-scale to P-type layer surface, when luminous two
After pole pipe Injection Current, the miniature roughening treatment plays peptizaiton to electric current, prevents current crowding；Further, quantum
Point is formed using InGaN the or InN Quantum Dots Growths of highly doped Mg and high component In, due to depositing for highly doped Mg and high component In
So that the energy gap of quantum dot is less than P-type layer, and the contact resistance at quantum dot is less than P-type layer, electric current is further uniformly divided
Dissipate, reduce contact voltage.
Description of the drawings
Fig. 1 is the utility model light emitting diode construction schematic diagram.
Accompanying drawing is marked：10. substrate；20. cushions；30. N-type layers；40. luminescent layers；50. P-type layers；60. nanometers
Quantum dot layer.
Specific embodiment
The utility model is described in detail below in conjunction with the drawings and specific embodiments.It should be noted that, this practicality is new
The accompanying drawing of type adopts the non-accurate ratio for simplifying very much, only to convenient, apparent aid illustration the utility model.
Referring to accompanying drawing 1, the utility model discloses the light emitting diode with nano-quantum point layer, at least including a substrate
10, and stack gradually cushion 20 on substrate 10, N-type layer 30, luminescent layer 40 and P-type layer 50, nano-quantum point layer
60.Wherein nano-quantum point layer 60 is made up of the quantum dot of nano-scale, and the utility model deposits nanometer chi on P-type layer 50
Very little quantum dot forms nano-quantum point layer 60, and using which as contact layer, nano-quantum point is equivalent to carrying out to 50 surface of P-type layer
The miniature roughening treatment of nano-scale, after light emitting diode Injection Current, the miniature roughening treatment is played dispersion and is made to electric current
With preventing current crowding.Meanwhile, in the present embodiment, nano-quantum point is formed from InGaN or InN growths, and which can be mixed for p-type
Miscellaneous or n-type doping undopes, the preferably high Mg of p-type adulterate and set In components more than or equal to 50%, Mg concentration more than etc.
In 1 × 1019cm-3.Quantum dot is formed using InGaN the or InN Quantum Dots Growths of highly doped Mg and high component In, due to highly doped
The presence of miscellaneous Mg and high component In so that the energy gap of quantum dot is less than P-type layer 50, further makes the contact resistance at quantum dot low
In P-type layer 50, make electric current further dispersed, reduce contact voltage.Quantum dot in nano-quantum point layer 60 can uniformly or
Uneven distribution, its distribution density are less than or equal to 6 × 109cm-2, its a diameter of 10 ~ 70nm is highly 3 ~ 20nm.Substrate 10 is
Patterned substrate or plain film substrate, material can select sapphire, silicon, carborundum, gallium nitride etc..Cushion 20 be AlN,
AlInGaN, AlGaN or GaN, select GaN in the present embodiment.
It should be appreciated that above-mentioned specific embodiment is preferred embodiment of the present utility model, model of the present utility model
Enclose and be not limited to the embodiment, all any changes done according to the utility model all belong within protection domain of the present utility model.
Claims (10)
1. the light emitting diode with nano-quantum point layer, at least including a substrate, and stacks gradually in the substrate
Cushion, N-type layer, luminescent layer and P-type layer, it is characterised in that：The light emitting diode is also included on the P-type layer
The nano-quantum point layer being made up of the quantum dot of nano-scale.
2. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The Nano quantum
The energy gap of point is less than the P-type layer.
3. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The Nano quantum
Point is InGaN or InN quantum dots.
4. the light emitting diode with nano-quantum point layer according to claim 1 or 3, it is characterised in that：The quantum
Point is for p-type doping or n-type doping or undopes.
5. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The quantum dot in
Uniformly or non-uniformly it is distributed in the P-type layer.
6. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The quantum dot
Distribution density is less than or equal to 6 × 109cm-2。
7. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The quantum dot
A diameter of 10 ~ 70nm, is highly 3 ~ 20nm.
8. the light emitting diode with nano-quantum point layer according to claim 4, it is characterised in that：The quantum dot is
P-type is adulterated, and p-type impurity is Mg.
9. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The substrate is figure
Shape substrate or plain film substrate.
10. the light emitting diode with nano-quantum point layer according to claim 1, it is characterised in that：The cushion
For AlN, AlInGaN, AlGaN or GaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621063988.7U CN206040683U (en) | 2016-09-20 | 2016-09-20 | Emitting diode with nanometer quantum dot layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621063988.7U CN206040683U (en) | 2016-09-20 | 2016-09-20 | Emitting diode with nanometer quantum dot layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206040683U true CN206040683U (en) | 2017-03-22 |
Family
ID=58295924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621063988.7U Active CN206040683U (en) | 2016-09-20 | 2016-09-20 | Emitting diode with nanometer quantum dot layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206040683U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020063592A1 (en) * | 2018-09-29 | 2020-04-02 | Tcl集团股份有限公司 | Quantum dot light-emitting diode |
| CN115377263A (en) * | 2022-10-25 | 2022-11-22 | 江西兆驰半导体有限公司 | Epitaxial wafer for deep ultraviolet LED, preparation method of epitaxial wafer and deep ultraviolet LED |
-
2016
- 2016-09-20 CN CN201621063988.7U patent/CN206040683U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020063592A1 (en) * | 2018-09-29 | 2020-04-02 | Tcl集团股份有限公司 | Quantum dot light-emitting diode |
| CN115377263A (en) * | 2022-10-25 | 2022-11-22 | 江西兆驰半导体有限公司 | Epitaxial wafer for deep ultraviolet LED, preparation method of epitaxial wafer and deep ultraviolet LED |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |