CN205974744U - Thermal field structure for polycrystalline ingot production furnace - Google Patents
Thermal field structure for polycrystalline ingot production furnace Download PDFInfo
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- CN205974744U CN205974744U CN201620956895.0U CN201620956895U CN205974744U CN 205974744 U CN205974744 U CN 205974744U CN 201620956895 U CN201620956895 U CN 201620956895U CN 205974744 U CN205974744 U CN 205974744U
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- graphite
- guard plate
- field structure
- hard felt
- thermal field
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Abstract
The utility model discloses a thermal field structure for polycrystalline ingot production furnace, include: thermal -insulated cage, set up crucible in thermal -insulated cage, set up in the side guard plate in the outside of crucible and set up the side heater between side guard plate and thermal -insulated cage, side guard plate and side are provided with the hard felt of graphite between the heater, and the hard felt of graphite is connected in the side guard plate, and the position of the hard felt of graphite sets up corresponding to the middle part of side heater. This thermal field structure for polycrystalline ingot production furnace can make the long brilliant surfac ratio in corner more level and more smooth under the prerequisite that does not prolong the long brilliant time, improves the yield of polycrystalline silicon ingot casting.
Description
Technical field
This utility model is related to polycrystalline silicon ingot casting technical field, more particularly, to a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace.
Background technology
When polycrystalline silicon ingot casting is carried out using directional freeze method, typically pass through the heater heating at ingot furnace sidepiece and top
Make primary polycrystalline fusing, bottom heat radiation decrease temperature crystalline grows.Due to the requirement to floating fusing for the fine melt technique, current thermal field is tied
Structure and top side heater heating ratio, sidepiece caloric value is larger, makes long crystalline substance middle and late stage solid liquid interface very convex, causes middle long brilliant knot
Still need to long time after bundle and carry out corner length crystalline substance, cause the cycle very long；Enterprise is in order to not affect the cycle, also not long brilliant in corner
End enters annealing, and this processing method can make corner raised or even crack, and not only affects also impact yield attractive in appearance.
There are two kinds of ameliorative way for above-mentioned at present：A kind of method is up the position of side heater, makes sidepiece maximum
Move on the position of caloric value, solid liquid interface is protruded degree and reduced, and can be effectively improved corner length brilliant.But, heater moves meeting
Lead to bottom temp low, floating is melted unsuccessfully, and fusing time is long, easily glue pot and split ingot.Another kind of method is to strengthen sidepiece to dissipate
Heat, this method does not interfere with fusing, but can increase energy consumption.
Utility model content
The purpose of this utility model is to propose a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, can be when not extending long crystalline substance
Between on the premise of, make length brilliant surface in corner more smooth, improve the yield of polycrystalline silicon ingot casting.
For reaching this purpose, this utility model employs the following technical solutions：
A kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, including：Heat-insulation cage, the crucible being arranged in described heat-insulation cage, setting
In the side guard plate in the outside of described crucible and be arranged at the side heater between described side guard plate and described heat-insulation cage；Described side
It is provided with the hard felt of graphite, the hard felt of described graphite is connected to described side guard plate, and described graphite between backplate and described side heater
The position of hard felt corresponds to the middle part setting of described side heater.
Preferably, the lateral surface of described side guard plate offers the groove for placing the hard felt of described graphite, described groove
Depth is slightly less than the thickness of the hard felt of described graphite.
Preferably, the thickness of the hard felt of described graphite is 10mm～30mm.
Preferably, the hard felt of described graphite and the aspect ratio of described side heater are 0.4～0.8：1.
The beneficial effects of the utility model are：The utility model proposes a kind of polycrystalline silicon ingot or purifying furnace thermal field structure, side
It is provided with the hard felt of graphite between backplate and side heater, the hard felt of graphite is connected to side guard plate, and the position of the hard felt of graphite corresponds to
The middle part setting of side heater.By graphite hard felt offside heater just to silicon liquid be thermally shielded, long crystalline substance can not extended
On the premise of time, make the surfacing of long crystalline substance attractive in appearance, improve yield, device is simple, and improvement cost is not high simultaneously.
Brief description
Fig. 1 is a kind of schematic diagram of the thermal field structure of polycrystalline silicon ingot or purifying furnace that this utility model provides.
Fig. 2 is the schematic diagram of side guard plate in this utility model.
In figure：1- heat-insulation cage；2- crucible；3- side guard plate；31- groove；4- side heater；The hard felt of 5- graphite.
Specific embodiment
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by specific embodiment.
As shown in figure 1, a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, including：Heat-insulation cage 1, the earthenware being arranged in heat-insulation cage 1
Crucible 2, it is arranged at the side guard plate 3 in outside of crucible 2 and is arranged at the side heater 4 between side guard plate 3 and heat-insulation cage 1；Side guard plate
It is provided with the hard felt of graphite 5 of annular, the hard felt of graphite 5 is connected to side guard plate 3, and the position of the hard felt of graphite 5 between 3 and side heater 4
Put the middle part setting corresponding to side heater 4.
The utility model proposes a kind of polycrystalline silicon ingot or purifying furnace thermal field structure, mainly for side during polycrystalline silicon ingot casting
Portion's caloric value is larger to cause length brilliant problem in middle and late stage solid liquid interface more convex impact corner to be improved, right by graphite hard felt 5
Side heater 4 just to silicon liquid be thermally shielded, reduce polycrystalline silicon ingot casting during middle and late stage length crystalline substance solid liquid interface protrusion degree,
On the premise of not extending the long crystalline substance time, make the surfacing of long crystalline substance attractive in appearance, improve yield, and device is simple, improvement cost is not
High.
As shown in Fig. 2 as an embodiment of this programme, the lateral surface of side guard plate 3 offers hard for placing graphite
The groove 31 of felt 5, the depth of groove 31 is slightly less than the thickness of the hard felt of graphite 5.
Preferably, in the thermal field structure of this polycrystalline silicon ingot or purifying furnace, the thickness of the hard felt of graphite 5 is 10mm～30mm, and graphite is hard
Felt 5 is 0.4～0.8 with the aspect ratio of side heater 4：1.
Describe know-why of the present utility model above in association with specific embodiment.These descriptions are intended merely to explain this reality
With new principle, and the restriction to this utility model protection domain can not be construed to by any way.Based on explanation herein,
Those skilled in the art does not need to pay performing creative labour and can associate other specific embodiment of the present utility model,
These modes fall within protection domain of the present utility model.
Claims (4)
1. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, including：Heat-insulation cage (1), the crucible being arranged in described heat-insulation cage (1)
(2), be arranged at the outside of described crucible (2) side guard plate (3) and be arranged at described side guard plate (3) and described heat-insulation cage (1) it
Between side heater (4)；It is characterized in that, it is provided with the hard felt of graphite between described side guard plate (3) and described side heater (4)
(5), the hard felt (5) of described graphite is connected to described side guard plate (3), and the position of the hard felt of described graphite (5) adds corresponding to described side
The middle part setting of hot device (4).
2. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 is it is characterised in that described side guard plate (3)
Lateral surface offer groove (31) for placing the hard felt of described graphite (5), the depth of described groove (31) is slightly less than described
The thickness of the hard felt of graphite (5).
3. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 and 2 is it is characterised in that described graphite is hard
The thickness of felt (5) is 10mm～30mm.
4. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 and 2 is it is characterised in that described graphite is hard
Felt (5) is 0.4～0.8 with the aspect ratio of described side heater (4)：1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620956895.0U CN205974744U (en) | 2016-08-26 | 2016-08-26 | Thermal field structure for polycrystalline ingot production furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620956895.0U CN205974744U (en) | 2016-08-26 | 2016-08-26 | Thermal field structure for polycrystalline ingot production furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205974744U true CN205974744U (en) | 2017-02-22 |
Family
ID=58037661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620956895.0U Expired - Fee Related CN205974744U (en) | 2016-08-26 | 2016-08-26 | Thermal field structure for polycrystalline ingot production furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205974744U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023024692A1 (en) * | 2021-08-26 | 2023-03-02 | 隆基绿能科技股份有限公司 | Solid felt thermal field member and monocrystal furnace |
-
2016
- 2016-08-26 CN CN201620956895.0U patent/CN205974744U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023024692A1 (en) * | 2021-08-26 | 2023-03-02 | 隆基绿能科技股份有限公司 | Solid felt thermal field member and monocrystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 Termination date: 20180826 |