CN205790045U - A kind of ITO structure LED chip - Google Patents
A kind of ITO structure LED chip Download PDFInfo
- Publication number
- CN205790045U CN205790045U CN201620567314.4U CN201620567314U CN205790045U CN 205790045 U CN205790045 U CN 205790045U CN 201620567314 U CN201620567314 U CN 201620567314U CN 205790045 U CN205790045 U CN 205790045U
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- layer
- thin film
- ito thin
- ito
- gaas substrate
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Abstract
The utility model discloses a kind of ITO structure LED chip, including GaAs substrate, epitaxial growth buffer, n AIGaInP limiting layer, multiple quantum well active layer, p AIGaInP limiting layer and p GaP Window layer it is sequentially provided with on GaAs substrate, p GaP Window layer is provided with ito thin film layer, ito thin film layer is provided with patterned diamond blade cutting aisle, patterned ito thin film layer is provided with metal electrode layer；N-electrode layer is arranged below at GaAs substrate.This utility model uses the pre-cutting width of walkway made more than blade thickness 46 μm, this avoid diamond blade directly to contact with ito thin film, reduce the resistance of the diamond cutters sheet to high speed rotating state, and solve ito thin film directly contact when blade cuts with GaP thin film easily with chip attachment and produce collapse angle, collapse the problem such as limit, crackle, greatly improve the presentation quality of product, reliability and finished product yield.
Description
Technical field
This utility model relates to semiconductor light-emitting diode chip manufacturing technology field, especially relates to a kind of ITO structure
LED chip.
Background technology
Light emitting diode has the advantages such as specular removal, low energy consumption, long-life, multiband, is that one has broad prospect of application
New light sources, current AlGaInP light emitting diode has been widely used in High Efficiency Solid-State lighting field, as display screen, automobile use
Lamp, backlight, traffic light, Landscape Lighting etc..
As the semiconductor GaAs backing material that AlGaInP light emitting diode is first-selected, its stable chemical nature, have with
AlGaInP material lattice matching is good, electric conductivity, heat conductivity are good, the crystal mass of manufacture height, in high volume low cost of manufacture etc. are bright
Aobvious advantage.For the AlGaInP LED chip of GaAs substrate, the general precision gas cutting machine system that uses, preprogramming setting cutting
Path condition, utilizes the ultra-thin diamond blade (thickness is 10-25 μm) of high speed rotating (30000-45000r/min) to AlGaInP
LED chip is cut, and makes AlGaInP LED chip be partitioned into single core particles.Tin-doped indium oxide
(IndiumTinOxide), commonly abbreviated as ITO, owing to GaAs backing material belongs to hard brittle material, especially for conventional ITO
For the AlGaInP LED chip of structure, one layer of ito thin film layer can be grown at epitaxial wafer upper surface in chip manufacturing proces,
Carrying out making metal electrode layer, this makes the stress of AlGaInP LED chip itself increase the most again, and ito thin film layer and
The adhesion of epitaxial layer, much smaller than the adhesion between each epitaxial layer within epitaxial wafer, adds ultra-thin diamond cutter during cutting
Sheet directly contacts ito thin film layer, epitaxial layer and GaAs substrate, and this allows for AlGaInP LED chip and adds and the most easily make man-hour
Become physical damnification in various degree, particularly around the front of AlGaInP LED chip, edge easily produce epitaxial layer and
The collapsing angle, collapse the problems such as limit, crackle, crackle of GaAs backing material, thus affect AlGaInP LED chip presentation quality and can
By property, conforming product rate is low.
Summary of the invention
The purpose of this utility model is to provide the ITO structure LED chip that a kind of presentation quality is good, reliability is high.
The purpose of this utility model is achieved in that
A kind of ITO structure LED chip, including GaAs substrate, is sequentially provided with epitaxial growth buffering on GaAs substrate
Layer, n-AIGaInP limiting layer, MQW (multiple quantum well, MQW) active layer, p-AIGaInP limiting layer
With p-GaP Window layer, being provided with ito thin film layer in p-GaP Window layer, at the back electrode that is arranged below of GaAs substrate, feature is:
Ito thin film layer is provided with patterned diamond blade cutting aisle, patterned ito thin film layer is provided with metal electrode
Layer.
The width in diamond blade cutting aisle is more than blade thickness 4-6 μm.
This utility model has that the presentation quality of AlGaInP LED chip is good, be easy to produce, reliability is high, qualification rate is high
Etc. advantage, solve ito thin film directly contact when blade cuts with GaP layer easily with chip attachment and produce collapse angle,
Collapse the problem such as limit, crackle, greatly improve the presentation quality of product, reliability and finished product yield.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Detailed description of the invention
Below in conjunction with embodiment and compare accompanying drawing this utility model is described in further detail.
A kind of ITO structure LED chip, including GaAs substrate 100, is sequentially provided with extension raw on GaAs substrate 100
Long cushion 101, n-AIGaInP limiting layer 102, multiple quantum well active layer 103, p-AIGaInP limiting layer 104 and p-GaP window
Mouth layer 105, is provided with ito thin film layer 106 in p-GaP Window layer 105, is provided with patterned diamond cutter on ito thin film layer 106
Sheet cutting aisle 109, is provided with metal electrode layer 107 on patterned ito thin film layer 106；Set below GaAs substrate 100
There is back electrode 201.
The width in diamond blade cutting aisle is more than blade thickness 4-6 μm.
Claims (2)
1. an ITO structure LED chip, including GaAs substrate, be sequentially provided with on GaAs substrate epitaxial growth buffer,
N-AIGaInP limiting layer, multiple quantum well active layer, p-AIGaInP limiting layer and p-GaP Window layer, set in p-GaP Window layer
There is ito thin film layer, n-electrode layer be arranged below at GaAs substrate, it is characterised in that: it is provided with patterned on ito thin film layer
Diamond blade cutting aisle, is provided with metal electrode layer on patterned ito thin film layer.
ITO structure LED chip the most according to claim 1, it is characterised in that: the width in diamond blade cutting aisle is more than
Blade thickness 4-6 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620567314.4U CN205790045U (en) | 2016-06-13 | 2016-06-13 | A kind of ITO structure LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620567314.4U CN205790045U (en) | 2016-06-13 | 2016-06-13 | A kind of ITO structure LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205790045U true CN205790045U (en) | 2016-12-07 |
Family
ID=58135116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620567314.4U Withdrawn - After Issue CN205790045U (en) | 2016-06-13 | 2016-06-13 | A kind of ITO structure LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205790045U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870276A (en) * | 2016-06-13 | 2016-08-17 | 南昌凯迅光电有限公司 | ITO (Indium Tin Oxide)-structure LED (Light Emitting Diode) chip and cutting method thereof |
-
2016
- 2016-06-13 CN CN201620567314.4U patent/CN205790045U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870276A (en) * | 2016-06-13 | 2016-08-17 | 南昌凯迅光电有限公司 | ITO (Indium Tin Oxide)-structure LED (Light Emitting Diode) chip and cutting method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20161207 Effective date of abandoning: 20180529 |