CN102969413B - The manufacture method of induced with laser air-gap light-emitting diode - Google Patents
The manufacture method of induced with laser air-gap light-emitting diode Download PDFInfo
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Abstract
A manufacture method for induced with laser air-gap light-emitting diode, comprises the steps: step 1: get a substrate, adopts laser in the inside formation rule grid-like air gap apart from substrate top surface 30um; Step 2: adopt MOCVD method to grow into stratum nucleare, N-type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer successively on substrate; Step 3: the method adopting photoetching, side on the ito layer etches downwards, and etching depth arrives in N-type doped layer, forms table top; Step 4: P-type electrode is prepared in the side do not etched on the ito layer; Step 5: prepare N-type electrode on table top.
Description
Technical field
The invention belongs to technical field of semiconductors, refer to a kind of manufacture method of induced with laser air-gap light-emitting diode especially.
Background technology
Because light-emitting diode has energy-saving and environmental protection, the advantages such as the life-span is long, after the coming years, light-emitting diode likely replaces the traditional lighting such as incandescent lamp, fluorescent lamp light fixture, and enters huge numbers of families.
At present, the main heteroepitaxial growth of nitride based light LED material is on the substrates such as sapphire, silicon, carborundum.Because the refractive index of gallium nitride material and air exist bigger difference, the light total reflection effect occurred in escape interface, makes the light of LED device extract and is subject to very large restriction.T.Fujii, Y.Gao, wait people to propose gallium nitride based light emitting diode surface texture technology to improve the extraction efficiency of light-emitting diode at Appl.Phys.Lett.84 (2004) 855..After this, surface coarsening is the key technology of conventional raising light-emitting diode light extraction efficiency.But, surface texture technology before mainly concentrates on the side alligatoring etc. of the alligatoring of p-type gallium nitride surface, the alligatoring of indium tin oxide transparent conductive layer surface, the alligatoring of the Sapphire Substrate back side, epitaxial layer of gallium nitride, is not related to the roughening treatment of light-emitting diode Sapphire Substrate sidewall exiting surface.In addition, Japanese Hamamatsu Photonics K. K proposed the laser processing (application number: 200710147746.5, publication number: CN101110392A) of low damage laser cutting silicon chip in 2007.But it does not mention the impact of sapphire in the face of light-emitting diode extraction efficiency of gallium nitride light-emitting diode device alligatoring.
This technology adopts laser processing technology, and at the inner scanning of light-emitting diode Sapphire Substrate, obtain crisscross air-gap, the light that light-emitting diode is sent changes in air-gap light path, substantially increases the extraction efficiency of light-emitting diode.This technology also exists obvious advantage, and technique process is optimized greatly, and production cycle and cost are declined to a great extent.
Summary of the invention
Main purpose of the present invention is the manufacture method providing a kind of induced with laser air-gap light-emitting diode, it is in light-emitting diode chip for backlight unit technique makes, at the inner scanning of light-emitting diode Sapphire Substrate, obtain crisscross air-gap, the light that light-emitting diode is sent changes in air-gap light path, substantially increases the extraction efficiency of light-emitting diode.LED external quantum efficiency is promoted, is particularly suitable for the making of large scale power-type crystal grain.
For achieving the above object, the invention provides a kind of manufacture method of induced with laser air-gap light-emitting diode, comprising the steps:
Step 1: get a substrate, adopts laser in the inside formation rule grid-like air gap apart from substrate top surface 30um;
Step 2: adopt MOCVD method to grow into stratum nucleare, N-type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer successively on substrate;
Step 3: the method adopting photoetching, side on the ito layer etches downwards, and etching depth arrives in N-type doped layer, forms table top;
Step 4: P-type electrode is prepared in the side do not etched on the ito layer;
Step 5: prepare N-type electrode on table top.
The invention provides compared with prior art: there is chip technology and only in cutting process, add suitable process, simple to operation, greatly can improve light extraction efficiency, LED external quantum efficiency is promoted, be particularly suitable for the making of large scale power-type crystal grain.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is section of structure of the present invention.
Embodiment
Refer to shown in Fig. 1, the invention provides the manufacture method of induced with laser air-gap light-emitting diode, comprise the steps:
Step 1: get a substrate 21, the material of substrate 21 is sapphire, Si, SiC, GaAs or glass, adopts laser in the inside formation rule grid-like air gap apart from substrate 21 upper surface 30um.Wherein the inside of this substrate 21 is by laser action, formation rule or irregular air-gap; Air-gap width 100nm-5um, air-gap length 500nm-5um, from being 3um-10um between air-gap.Wherein the air-gap of this substrate 21 is individual layer or multilayer arrangement;
Wherein this laser can be nanosecond laser, picosecond laser or femto-second laser.Optical maser wavelength can be 266nm, 355nm, 532nm or 1064nm.
Step 2: adopt MOCVD method to grow successively on substrate 21: nucleating layer 22, N-shaped doped layer 23, the material of this N-shaped doped layer 23 is n-GaN, and N-shaped GaN adopts Si doping, and thickness is 1-5um.The material of multiple quantum well light emitting layer 24 is InGaN/GaN, and thickness is the periodicity of 50-500nm, wherein multiple quantum well light emitting layer 24 is 1-100.The material of P type doped layer 25 is p-type GaN, and it adopts Mg doping, and thickness is 200-500nm.The material of ITO layer 26 is the InO of 95%
2, 5%SnO
2, thickness is 10-1000nm.
Step 3: the method adopting photoetching, the side in ITO layer 26 etches downwards, and etching depth arrives in N-type doped layer 23, forms table top 23 '; Etching depth can not penetrate N-type doped layer 23, and the degree of depth is to the centre of N-type doped layer 23 thickness.
Step 4: P-type electrode 27 prepared by the side do not etched in ITO layer 26; The material of P-type electrode is Cr/Pt/Au, and thickness is:
Step 5: in table top 23 ' upper preparation N-type electrode 28.N-type electrode material is Cr/Pt/Au, and thickness is:
The above; only embodiments of the invention; not any pro forma restriction is done to the present invention; every above embodiment is done according to the technology of the present invention essence any simple modification, equivalent variations and modification; all still belong within technical solution of the present invention scope, therefore protection scope of the present invention is when being as the criterion with claims.
Claims (4)
1. a manufacture method for induced with laser air-gap light-emitting diode, comprises the steps:
Step 1: get a substrate, adopts laser in the inside formation rule grid-like air gap apart from substrate top surface 30 μm;
Step 2: adopt MOCVD method to grow into stratum nucleare, N-type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer successively on substrate;
Step 3: the method adopting photoetching, side on the ito layer etches downwards, and etching depth arrives in N-type doped layer, forms table top;
Step 4: P-type electrode is prepared in the side do not etched on the ito layer;
Step 5: prepare N-type electrode on table top;
Wherein the inside of this substrate is by laser action, formation rule or irregular side lateral photon crystal air-gap; Air-gap width 100nm-5 μm, air-gap length 500nm-5 μm, from being 3um-10 μm between air-gap.
2. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein the material of side lateral photon crystalline substrates is sapphire, Si, SiC, GaAs or glass.
3. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein the air-gap of this substrate is individual layer or multilayer arrangement.
4. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein this laser is nanosecond laser, picosecond laser or femto-second laser, and optical maser wavelength is 266nm, 355nm, 532nm or 1064nm.
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| CN201210548464.7A CN102969413B (en) | 2012-12-17 | 2012-12-17 | The manufacture method of induced with laser air-gap light-emitting diode |
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| CN102969413B true CN102969413B (en) | 2016-01-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103178168A (en) * | 2013-03-19 | 2013-06-26 | 中国科学院半导体研究所 | Preparation method of air-gap photonic crystal implanted gallium nitride-based light emitting diode |
| CN106601876A (en) * | 2015-10-19 | 2017-04-26 | 映瑞光电科技(上海)有限公司 | LED chip structure and manufacturing method thereof |
| CN109390444A (en) * | 2017-08-11 | 2019-02-26 | 南通同方半导体有限公司 | A kind of light emitting diode construction can increase LED chip light extraction |
| CN110299436B (en) * | 2019-07-02 | 2020-12-04 | 厦门乾照光电股份有限公司 | Flip light-emitting diode chip and manufacturing method thereof |
Citations (3)
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|---|---|---|---|---|
| CN101325234A (en) * | 2007-06-13 | 2008-12-17 | 中国科学院半导体研究所 | Method for preparing GaN-based LED with photon crystal structure |
| CN102593233A (en) * | 2012-03-19 | 2012-07-18 | 中国科学院上海技术物理研究所 | Gallium nitride (GaN) based personal identification number (PIN) detector based on imaging sapphire substrate and preparation method |
| CN102709422A (en) * | 2012-06-21 | 2012-10-03 | 华灿光电股份有限公司 | Semiconductor light-emitting device and preparation method thereof |
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| JP2010003804A (en) * | 2008-06-19 | 2010-01-07 | Sharp Corp | Nitride semiconductor light-emitting diode element and method of manufacturing the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325234A (en) * | 2007-06-13 | 2008-12-17 | 中国科学院半导体研究所 | Method for preparing GaN-based LED with photon crystal structure |
| CN102593233A (en) * | 2012-03-19 | 2012-07-18 | 中国科学院上海技术物理研究所 | Gallium nitride (GaN) based personal identification number (PIN) detector based on imaging sapphire substrate and preparation method |
| CN102709422A (en) * | 2012-06-21 | 2012-10-03 | 华灿光电股份有限公司 | Semiconductor light-emitting device and preparation method thereof |
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