CN205723562U - The most colored a kind of polycrystalline solar cell - Google Patents
The most colored a kind of polycrystalline solar cell Download PDFInfo
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- CN205723562U CN205723562U CN201620281150.9U CN201620281150U CN205723562U CN 205723562 U CN205723562 U CN 205723562U CN 201620281150 U CN201620281150 U CN 201620281150U CN 205723562 U CN205723562 U CN 205723562U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
This utility model the most colored open a kind of polycrystalline solar cell, belongs to technical field of solar batteries, the N-type silicon including P-type silicon substrate, being arranged on P-type silicon substrate side and positive silver electrode and be arranged on aluminum back surface field and the back of the body silver electrode of P-type silicon substrate opposite side；One surface of described P-type silicon substrate is matte, described N-type silicon layer is stacked on this matte and cooperatively forms PN junction with P-type silicon, the surface of described N-type silicon is provided with silicon dioxide, and described positive silver electrode is through described silicon dioxide and is fixed on N-type silicon, and the surface of described silicon dioxide is provided with silicon nitride film；Described aluminum back surface field is layered in the lower surface of P-type silicon substrate, and described back of the body silver electrode is fixed in described aluminum back surface field.Matte on this solaode, more than the matte size of common acids method making herbs into wool, considerably reduces the reflectance of light, it is to avoid the follow-up thinning silicon nitride film counter productive to reflectance；Employing silicon dioxide is passivated, and improves open-circuit voltage and the short circuit current of battery.
Description
Technical field
This utility model relates to a kind of solaode, is specifically related to the most colored a kind of polycrystalline solar cell, belongs to technical field of solar batteries.
Background technology
Crystal silicon solar batteries is that one effectively absorbs solar radiant energy, photovoltaic effect is utilized to convert optical energy into the device of electric energy, when solar irradiation is in quasiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole is flowed to P district by N district, and electronics is flowed to N district by P district, is formed for electric current after connecting circuit.
The preparation technology of crystal silicon solar batteries be divided into making herbs into wool, spread, etch, front plated film, silk screen printing, the big operation of sintering six.Wherein, the purpose of making herbs into wool is to form rough texturing suede structure at front side of silicon wafer, increases the absorption area of sunlight, reduces the reflectance of sunlight.The purpose of front plated film is at front side of silicon wafer deposited silicon nitride, plays antireflective and passivation.
For realizing the purpose of high-photoelectric transformation efficiency, the front side silicon nitride film of polycrystalline battery is set in 80-90nm, reaches antireflecting optimum efficiency.The silicon nitride film of different-thickness shows different colors, when thickness is at 80-90nm, in blueness.Owing to polycrystalline battery is formed by being orientated different crystal grain, when the thickness of silicon nitride is in the range of 20-70nm, and the outward appearance of battery presents colour.
In actual application, in order to increase sight, colored polycrystalline battery also has certain market demand.The method of conventionally manufactured colored polycrystalline battery is simply to reduce the thickness of silicon nitride.But owing to reducing thickness, the anti-reflective effect of silicon nitride film can be weakened, the photoelectric transformation efficiency of battery is greatly lowered.
Summary of the invention
The problem existed for above-mentioned prior art, this utility model provides the most colored a kind of polycrystalline solar cell, is effectively improved the photoelectric transformation efficiency of colored polycrystalline solar cell.
To achieve these goals, a kind of the most colored polycrystalline solar cell that this utility model uses, the N-type silicon including P-type silicon substrate, being arranged on P-type silicon substrate side and positive silver electrode and be arranged on aluminum back surface field and the back of the body silver electrode of P-type silicon substrate opposite side；
One surface of described P-type silicon substrate is matte, described N-type silicon layer is stacked on this matte and cooperatively forms PN knot with P-type silicon, the surface of described N-type silicon is provided with silicon dioxide, and described positive silver electrode is through described silicon dioxide and is fixed on N-type silicon, and the surface of described silicon dioxide is provided with silicon nitride film；
Described aluminum back surface field is layered in the lower surface of P-type silicon substrate, and described back of the body silver electrode is fixed in described aluminum back surface field.
As improvement, the thickness of described silicon dioxide is 25-60nm.
As improvement, the thickness of described silicon dioxide is 40nm.
As improvement, the thickness of described silicon nitride film is 20-55nm.
As improvement, described silicon nitride film is monolayer, and the refractive index of silicon nitride film is 1.85-2.0.
As improvement, the thickness of described silicon nitride film is 35nm.
Compared with prior art, this utility model has the advantages that
1) this utility model forms difference of height is the matte of 1-5 μm, more than the matte size of common acids method making herbs into wool, considerably reduce the reflectance of light, it is to avoid the follow-up thinning silicon nitride film counter productive to reflectance.
2) simultaneously, use silicon dioxide passivation, improve open-circuit voltage and the short circuit current of battery, thus while not reducing cell photoelectric conversion efficiency, the colored polycrystalline solar cell of preparation.
Accompanying drawing explanation
Fig. 1 is the structural representation of this utility model solaode；
Fig. 2 is preparation technology flow chart of the present utility model；
In figure: 1, positive silver electrode, 2, silicon nitride film, 3, silicon dioxide, 4, N-type silicon, 5, P-type silicon substrate, 6, aluminum back surface field, 7, back of the body silver electrode.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage of greater clarity, below by drawings and Examples, this utility model is further elaborated.However, it should be understood that specific embodiment described herein is only in order to explain this utility model, it is not limited to scope of the present utility model.Term as used herein " on ", D score and similar expression for illustrative purposes only.Unless otherwise defined, all of technical term used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present utility model are generally understood that, it is intended merely to describe the purpose of specific embodiment at term used in the description of the present utility model herein, it is not intended that in limiting this utility model.
As it is shown in figure 1, the most colored a kind of polycrystalline solar cell, the N-type silicon 4 including P-type silicon substrate 5, being arranged on P-type silicon substrate 5 side and positive silver electrode 1 and be arranged on aluminum back surface field 6 and the back of the body silver electrode 7 of P-type silicon substrate 5 opposite side；
One surface of described P-type silicon substrate 5 is matte, described N-type silicon 4 is layered on this matte and cooperatively forms PN junction with P-type silicon, the surface of described N-type silicon 4 is provided with silicon dioxide 3, described positive silver electrode 1 through described silicon dioxide 3 and is fixed on N-type silicon 4, and the surface of described silicon dioxide 3 is provided with silicon nitride film 2；
Described aluminum back surface field 6 is layered in the lower surface of P-type silicon substrate 5, and described back of the body silver electrode 7 is fixed in described aluminum back surface field 6.
As the improvement of embodiment, the thickness of described silicon dioxide 3 is 25-60nm.Concrete, the thickness using silicon dioxide 3 can be 25nm, 30nm, 40nm, 50nm or 60nm, can select suitable thickness in production the most flexibly.
Improvement as embodiment, the thickness of described silicon nitride film 2 is 20-55nm, the refractive index of silicon nitride film 2 is 1.85-2.0, concrete, the thickness using silicon nitride film 2 can be 25nm, 35nm, 40nm, 50nm or 55nm, can select the suitable thickness of silicon nitride film 2 in production the most flexibly.
As in figure 2 it is shown, efficient colored polycrystalline solar cell of the present utility model, following steps are specifically used to prepare,
1) polysilicon chip is carried out silver nitrate catalysis making herbs into wool, silicon chip is placed in the AgNO that concentration is 1.0-2.5mol/L3In solution, pass through AgNO3Solution is electrochemical deposition Ag nano-particle on silicon chip, then uses H2O2Mixed solution (H with HF2O2It is 2.0:1-4.5:1 with the mass ratio of HF) etch this silicon chip with Ag nanoparticle, treat on silicon chip, to form the matte that difference of height is 1-5 μm, then use HCL and H2O2Mixed solution (use HCL and H2O2Mass ratio be 1:1-2:1) remove the Ag granule on silicon chip；
2) high square resistance phosphorus diffusion is carried out at front side of silicon wafer；
3) front phosphorosilicate glass and periphery P N knot that described phosphorus diffuses to form are removed；
4) using tubular diffusion furnace to aoxidize silicon chip, diffusion temperature is 800-850 DEG C, and oxidization time is 10-30min, is the silicon dioxide of 25-60nm at silicon chip surface growth thickness；
5) method (PECVD) of plasma chemical deposition is used at front side of silicon wafer, ammonia and the hybrid technique gas (ammonia flow: 4.5-10slm) of silane using flow-rate ratio to be 3.5:1-7.5:1, sedimentation time is 5-15min, forming thickness at front side of silicon wafer is 20-55nm, and refractive index is the monolayer colour silicon nitride film of 1.85-2.0；
6) in silicon chip back side printing back electrode and aluminum back surface field；
7) anelectrode is formed at front side of silicon wafer print positive electrode slurry；
8) it is sintered silicon chip forming colored polycrystalline solar cell.
The most colored polycrystalline solar cell is prepared by said method, owing to using silver nitrate catalysis making herbs into wool, form the matte that difference of height is 1-5 μm, more than the matte size of common acids method making herbs into wool, considerably reduce the reflectance of light, it is to avoid the follow-up thinning silicon nitride film counter productive to reflectance；Further, since use silicon dioxide passivation, improve open-circuit voltage and the short circuit current of battery, thus while not reducing cell photoelectric conversion efficiency, the colored polycrystalline solar cell that preparation accords with the demands of the market.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all any amendment, equivalent or improvement etc. made within spirit of the present utility model and principle, within should be included in protection domain of the present utility model.
Claims (6)
1. an efficient colored polycrystalline solar cell, it is characterised in that
The N-type silicon (4) including P-type silicon substrate (5), being arranged on P-type silicon substrate (5) side and positive silver electrode (1) and
It is arranged on aluminum back surface field (6) and back of the body silver electrode (7) of P-type silicon substrate (5) opposite side；
One surface of described P-type silicon substrate (5) is matte, and described N-type silicon (4) is layered on this matte and and P-type silicon
Cooperatively forming PN junction, the surface of described N-type silicon (4) is provided with silicon dioxide (3), and described positive silver electrode (1) passes described two
Silicon oxide (3) is also fixed on N-type silicon (4), and the surface of described silicon dioxide (3) is provided with silicon nitride film (2)；
Described aluminum back surface field (6) is layered in the lower surface of P-type silicon substrate (5), and described back of the body silver electrode (7) is fixed on the described aluminum back of the body
On field (6).
2. the most colored a kind of polycrystalline solar cell as claimed in claim 1, it is characterised in that described silicon dioxide (3)
Thickness be 25-60nm.
3. the most colored a kind of polycrystalline solar cell as claimed in claim 2, it is characterised in that described silicon dioxide (3)
Thickness be 40nm.
4. the most colored a kind of polycrystalline solar cell as claimed in claim 1 or 2, it is characterised in that described silicon nitride film
(2) thickness is 20-55nm.
5. the most colored a kind of polycrystalline solar cell as claimed in claim 4, it is characterised in that described silicon nitride film (2)
For monolayer, the refractive index of silicon nitride film (2) is 1.85-2.0.
6. the most colored a kind of polycrystalline solar cell as claimed in claim 4, it is characterised in that described silicon nitride film (2)
Thickness be 35nm.
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| CN201620281150.9U CN205723562U (en) | 2016-04-06 | 2016-04-06 | The most colored a kind of polycrystalline solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838140A (en) * | 2019-11-22 | 2021-05-25 | 阜宁阿特斯阳光电力科技有限公司 | Polycrystalline silicon solar cell, preparation method thereof and method for preparing textured structure of polycrystalline silicon solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838140A (en) * | 2019-11-22 | 2021-05-25 | 阜宁阿特斯阳光电力科技有限公司 | Polycrystalline silicon solar cell, preparation method thereof and method for preparing textured structure of polycrystalline silicon solar cell |
| CN112838140B (en) * | 2019-11-22 | 2022-05-31 | 阜宁阿特斯阳光电力科技有限公司 | Polycrystalline silicon solar cell, preparation method thereof and method for preparing textured structure of polycrystalline silicon solar cell |
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Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180115 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |