CN105655448B - A kind of efficiently colored polycrystalline solar cell and preparation method thereof - Google Patents
A kind of efficiently colored polycrystalline solar cell and preparation method thereof Download PDFInfo
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- CN105655448B CN105655448B CN201610211169.0A CN201610211169A CN105655448B CN 105655448 B CN105655448 B CN 105655448B CN 201610211169 A CN201610211169 A CN 201610211169A CN 105655448 B CN105655448 B CN 105655448B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 235000008216 herbs Nutrition 0.000 claims abstract description 14
- 210000002268 wool Anatomy 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 9
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 239000011574 phosphorus Substances 0.000 claims abstract description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- 239000011267 electrode slurry Substances 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 101710134784 Agnoprotein Proteins 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 3
- 150000007513 acids Chemical class 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000010237 hybrid technique Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
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Abstract
The present invention discloses a kind of efficiently colored polycrystalline solar cell and preparation method thereof, belongs to technical field of solar batteries, comprises the following steps, and 1) silver nitrate catalysis making herbs into wool is carried out to polysilicon chip；2) high square resistance phosphorus diffusion is carried out in front side of silicon wafer；3) front phosphorosilicate glass and periphery P N knots that the phosphorus diffusion is formed are removed；4) silicon chip tubular type is aoxidized to form silica；5) PECVD plated films are carried out in front side of silicon wafer；6) back electrode and Al-BSF are printed in silicon chip back side；7) positive electrode is formed in front side of silicon wafer print positive electrode slurry；8) silicon chip is sintered to form colored polycrystalline solar cell.The present invention is formed the matte that difference of height is 15 μm, more than the matte size of common acids method making herbs into wool, is considerably reduced the reflectivity of light, avoid counter productive of the follow-up thinned silicon nitride film to reflectivity using silver nitrate catalysis making herbs into wool；It is passivated using silica, improves the open-circuit voltage and short circuit current of battery.
Description
Technical field
The present invention relates to a kind of solar cell, and in particular to a kind of efficiently colored polycrystalline solar cell and its preparation side
Method, belong to technical field of solar batteries.
Background technology
Crystal silicon solar batteries are that one kind effectively absorbs solar radiant energy, are converted optical energy into using photovoltaic effect
The device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), new hole-electron is formed to (V-E
Pair), in the presence of P-N junction electric field, hole flows to P areas by N areas, and electronics flows to N areas by P areas, is just formed after connecting circuit
Electric current.
It is six big that the preparation technology of crystal silicon solar batteries is divided into making herbs into wool, diffusion, etching, front plated film, silk-screen printing, sintering
Process.Wherein, the purpose of making herbs into wool is to form rough texturing suede structure in front side of silicon wafer, increases the absorption of sunshine
Area, reduce the reflectivity of sunshine.The purpose of front plated film is in front side of silicon wafer deposited silicon nitride, plays antireflective and passivation is made
With.
To realize the purpose of high-photoelectric transformation efficiency, the front side silicon nitride film of polycrystalline battery is set in 80-90nm, reaches and subtract
The optimum efficiency of reflection.The silicon nitride film of different-thickness shows different colors, when thickness is in 80-90nm, in blueness.By
Formed in polycrystalline battery by being orientated different crystal grain, when the thickness of silicon nitride is in the range of 20-70nm, coloured silk is presented in the outward appearance of battery
Color.
In actual application, in order to increase sight, colored polycrystalline battery also has certain market demand.Tradition system
The method for making colored polycrystalline battery is the simple thickness for reducing silicon nitride.But due to reducing thickness, silicon nitride film can be weakened
Anti-reflective effect, the photoelectric transformation efficiency of battery is greatly lowered.
The content of the invention
In view of the above-mentioned problems of the prior art, the present invention provides a kind of efficiently colored polycrystalline solar cell and its system
Preparation Method, effectively improve the photoelectric transformation efficiency of colored polycrystalline solar cell.
To achieve these goals, the preparation method for a kind of efficiently colored polycrystalline solar cell that the present invention uses, bag
Include following steps,
1) silver nitrate catalysis making herbs into wool is carried out to polysilicon chip；
2) high square resistance phosphorus diffusion is carried out in front side of silicon wafer；
3) front phosphorosilicate glass and periphery P N knots that the phosphorus diffusion is formed are removed；
4) silicon chip tubular type is aoxidized to form silica；
5) PECVD plated films are carried out in front side of silicon wafer；
6) back electrode and Al-BSF are printed in silicon chip back side；
7) positive electrode is formed in front side of silicon wafer print positive electrode slurry；
8) silicon chip is sintered to form colored polycrystalline solar cell.
As an improvement, in the step 1), the specific steps of silver nitrate catalysis making herbs into wool include,
Silicon chip is placed in the AgNO that concentration is 1.0-2.5mol/L3In solution, pass through AgNO3Solution electrochemistry on silicon chip
Ag nano particles are deposited, then using H2O2The silicon chip for carrying Ag nanoparticles is etched with HF mixed solution, treats to form height on silicon chip
The matte that low difference is 1-5 μm, then using HCL and H2O2Mixed solution remove silicon chip on Ag particles.
As an improvement, in the step 1), the H2O2Mass ratio with HF is 2.0:1-4.5:1.
As an improvement, in the step 1), using HCL and H2O2Mass ratio be 1:1-2:1.
As an improvement, in the step 4), silicon chip is aoxidized using tubular diffusion furnace, in silicon chip surface growth thickness
For 25-60nm silica.
As an improvement, the condition of work of tubular diffusion furnace is, diffusion temperature is 800-850 DEG C, oxidization time 10-
30min。
As an improvement, in the step 5), PECVD plated films are used to form individual layer of the thickness for 20-55nm in front side of silicon wafer
Colored silicon nitride film.
As an improvement, the refractive index of the silicon nitride film is 1.85-2.0.
As an improvement, in PECVD plated films, flow-rate ratio is used as 3.5:1-7.5:1 ammonia and the hybrid technique of silane
Gas, sedimentation time 5-15min.
In addition, additionally provide a kind of electric using the obtained efficiently colored polycrystalline solar of preparation method described in any of the above-described
Pond.
Compared with prior art, the present invention has the advantages that：
1) present invention forms the matte that difference of height is 1-5 μm, more than common acids method making herbs into wool using silver nitrate catalysis making herbs into wool
Matte size, the reflectivity of light is considerably reduced, avoid counter productive of the follow-up thinned silicon nitride film to reflectivity.
2) simultaneously, it is passivated using silica, improves the open-circuit voltage and short circuit current of battery, so as to is not reducing battery
While photoelectric transformation efficiency, colored polycrystalline solar cell is prepared.
Brief description of the drawings
Fig. 1 is the preparation technology flow chart of the present invention；
Fig. 2 is the structural representation that the present invention prepares solar cell；
In figure：1st, positive silver electrode, 2, silicon nitride film, 3, silica, 4, N-type silicon, 5, P-type silicon substrate, 6, Al-BSF, 7,
Carry on the back silver electrode.
Embodiment
To make the object, technical solutions and advantages of the present invention of greater clarity, below by drawings and Examples, to this
Invention is further elaborated.However, it should be understood that the specific embodiments described herein are merely illustrative of the present invention,
The scope being not intended to limit the invention.
Term as used herein " on ", " under " and similar expression is for illustrative purposes only.Unless otherwise fixed
Justice, all technical terms and scientific terminology used herein are generally managed with belonging to the those skilled in the art of the present invention
The implication of solution is identical, and used term is intended merely to describe the mesh of specific embodiment in the description of the invention herein
, it is not intended that in the limitation present invention.
As shown in figure 1, a kind of preparation method of efficiently colored polycrystalline solar cell, comprises the following steps,
1) silver nitrate catalysis making herbs into wool is carried out to polysilicon chip, silicon chip is placed in the AgNO that concentration is 1.0-2.5mol/L3It is molten
In liquid, pass through AgNO3Solution electrochemical deposition Ag nano particles on silicon chip, then using H2O2With HF mixed solution (H2O2With
HF mass ratio is 2.0:1-4.5:1) silicon chip for carrying Ag nanoparticles is etched, treats that it is 1-5 μm that difference of height is formed on silicon chip
Matte, then using HCL and H2O2Mixed solution (use HCL and H2O2Mass ratio be 1:1-2:1) Ag on silicon chip is removed
Grain；
2) high square resistance phosphorus diffusion is carried out in front side of silicon wafer；
3) front phosphorosilicate glass and periphery P N knots that the phosphorus diffusion is formed are removed；
4) silicon chip is aoxidized using tubular diffusion furnace, diffusion temperature is 800-850 DEG C, oxidization time 10-
30min, in the silica that silicon chip surface growth thickness is 25-60nm；
5) method (PECVD) of plasma chemical deposition is used in front side of silicon wafer, uses flow-rate ratio as 3.5:1-7.5:1
Hybrid technique gas (the ammonia flow of ammonia and silane：4.5-10slm), sedimentation time 5-15min, formed in front side of silicon wafer
Thickness is 20-55nm, and refractive index is 1.85-2.0 individual layer colour silicon nitride film；
6) back electrode and Al-BSF are printed in silicon chip back side；
7) positive electrode is formed in front side of silicon wafer print positive electrode slurry；
8) silicon chip is sintered to form colored polycrystalline solar cell.
Using the above method, a kind of efficiently colored polycrystalline solar cell, including P-type silicon substrate as shown in Figure 2 is made
5th, the N-type silicon 4 and positive silver electrode 1 and the and of Al-BSF 6 for being arranged on the opposite side of P-type silicon substrate 5 of the side of P-type silicon substrate 5 are arranged on
Carry on the back silver electrode 7；
One surface of the P-type silicon substrate 5 is matte, and the N-type silicon 4 is layered on the matte and coordinated with P-type silicon
PN junction is formed, the surface of the N-type silicon 4 is provided with silica 3, and the positive silver electrode 1 is through the silica 3 and is fixed on
On N-type silicon 4, the surface of the silica 3 is provided with silicon nitride film 2；
The Al-BSF 6 is layered in the lower surface of P-type silicon substrate 5, and the back of the body silver electrode 7 is fixed in the Al-BSF 6.
Specifically, the thickness of silica 3 is 25-60nm, it can be 25nm, 30nm, 40nm, 50nm or 60nm, produce
In can flexibly select suitable thickness as needed.
In addition, specifically, the thickness of silicon nitride film 2 is 20-55nm, the refractive index of silicon nitride film 2 is 1.85-2.0, is used
The thickness of silicon nitride film 2 can be 25nm, 35nm, 40nm, 50nm or 55nm, can flexibly select to nitrogenize as needed in production
The suitable thickness of silicon fiml 2.
The preparation method of the present invention and obtained solar cell, have the following advantages that：
1) present invention forms the matte that difference of height is 1-5 μm, more than common acids method making herbs into wool using silver nitrate catalysis making herbs into wool
Matte size, the reflectivity of light is considerably reduced, avoid counter productive of the follow-up thinned silicon nitride film to reflectivity.
2) simultaneously, it is passivated using silica, improves the open-circuit voltage and short circuit current of battery, so as to is not reducing battery
While photoelectric transformation efficiency, colored polycrystalline solar cell is prepared.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modification, equivalent substitution or improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (2)
- A kind of 1. preparation method of efficiently colored polycrystalline solar cell, it is characterised in that comprise the following steps,1) silver nitrate catalysis making herbs into wool is carried out to polysilicon chip, the specific steps of silver nitrate catalysis making herbs into wool include,Silicon chip is placed in the AgNO that concentration is 1.0-2.5mol/L3In solution, pass through AgNO3Solution electrochemical deposition on silicon chip Ag nano particles, then mass ratio is used as 2.0:1-4.5:1 H2O2The silicon for carrying Ag nanoparticles is etched with HF mixed solution Piece, treat that difference of height is formed on silicon chip is 1-5 μm of matte, then use mass ratio as 1:1-2:1 HCL and H2O2Mixed solution Remove the Ag particles on silicon chip；2) high square resistance phosphorus diffusion is carried out in front side of silicon wafer；3) front phosphorosilicate glass and periphery P N knots that the phosphorus diffusion is formed are removed；4) silicon chip is aoxidized using tubular diffusion furnace, the condition of work of tubular diffusion furnace is diffusion temperature 800-850 DEG C, oxidization time 10-30min, in the silica that silicon chip surface growth thickness is 25-60nm；5) PECVD plated films are used to form thickness in front side of silicon wafer as 20-55nm individual layer colour silicon nitride film, the silicon nitride film Refractive index be 1.85-2.0, in PECVD plated films, use flow-rate ratio as 3.5:1-7.5:1 ammonia and the mixing work of silane Skill gas, sedimentation time 5-15min；6) back electrode and Al-BSF are printed in silicon chip back side；7) positive electrode is formed in front side of silicon wafer print positive electrode slurry；8) silicon chip is sintered to form colored polycrystalline solar cell.
- 2. efficiently colored polycrystalline solar cell is made using preparation method described in claim 1 in one kind.
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| CN109802009B (en) * | 2019-01-18 | 2020-12-18 | 河北大学 | Preparation method of ultrathin crystalline silicon double-sided solar cell |
| CN112397610A (en) * | 2020-10-21 | 2021-02-23 | 晶澳太阳能有限公司 | Solar cell electrode printing method |
| CN114277356A (en) * | 2021-12-23 | 2022-04-05 | 晋能清洁能源科技股份公司 | Method for depositing silicon nitride film by polycrystalline silicon solar cell |
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| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
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Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180510 Address after: 322009 No. 126 Sufu Road, Suxi Town, Yiwu City, Jinhua, Zhejiang Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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