CN205711037U - A kind of mitigate the thermal field structure that top insulation material is corroded - Google Patents
A kind of mitigate the thermal field structure that top insulation material is corroded Download PDFInfo
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- CN205711037U CN205711037U CN201620576078.2U CN201620576078U CN205711037U CN 205711037 U CN205711037 U CN 205711037U CN 201620576078 U CN201620576078 U CN 201620576078U CN 205711037 U CN205711037 U CN 205711037U
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- insulation
- crucible
- insulation layer
- heat
- backplate
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Abstract
The utility model relates to a kind of mitigating the thermal field structure that top insulation material is corroded, including crucible, backplate, heater, closure insulation, side heat-insulation layer and end heat-insulation layer；Heater is positioned at crucible periphery, the side surrounding crucible and bottom surface；Closure insulation is positioned above crucible, and backplate is positioned at closure insulation surface；Side heat-insulation layer and end heat-insulation layer lay respectively at heater periphery and bottom.This practicality is new to be provided the benefit that: avoid SiC steam in insulation material inside deposition and corrosion, thus ensures in crystal growth overall process, and top insulation material maintains constant heat insulation effect, thus ensures the stability of crystal growth.
Description
Technical field
The utility model relates to the thermal field structure in a kind of carborundum preparation facilities field, is specifically related to a kind of mitigation top
The thermal field structure that insulation material is corroded.
Background technology
In SiC crystal preparation field, growing method the most ripe is physical vapor transport (PVT).Crystal growth
The crucible using uses graphite material, and owing to graphite material has certain porosity, under high temperature, SiC steam can penetrate graphite crucible
And deposit in the insulation quilt outside crucible, the Si component in particularly SiC steam can generate with graphite insulation quilt generation chemical combination
Graphite felt is changed into SiC powder in small, broken bits by SiC.After insulation quilt grain corrosion failure, integral heat insulation performance is incited somebody to action, and corrodes meeting
Concentrating on ad-hoc location causes temperature of thermal field gradient off-design to require, causes the instability of crystal growth.
It to this end, how to provide a kind of structure mitigating heat preservation component corrosion, is the purpose of the utility model research.
Content of the invention:
For overcoming prior art not enough, the utility model provides and a kind of mitigate the thermal field that top insulation material corroded and tie
Structure, the SiC steam going out long brilliant process leaks carries out blocking and water conservancy diversion, it is ensured that in crystal growth overall process, top thermal insulating material
Material maintains constant heat insulation effect, thus ensures the stability of crystal growth.
For solving prior art problem, the utility model be the technical scheme is that
A kind of mitigate the thermal field structure that top insulation material is corroded, including crucible, backplate, heater, closure insulation, side
Heat-insulation layer and end heat-insulation layer；Described heater is positioned at crucible periphery, the side surrounding crucible and bottom surface；Described top insulation
Layer is positioned above crucible, and described backplate is positioned at below closure insulation, and covers closure insulation lower surface；Described side heat-insulation layer
Lay respectively at heater periphery and bottom with end heat-insulation layer.
Further, described backplate is more than 10mm with crucible top spacing.
Further, top heat-insulation layer uses graphite soft felt or the hard felt material of graphite.
Further, it described is positioned at the backplate number of plies below closure insulation as required, may select one or more layers.
This practicality is new to be provided the benefit that: avoids SiC steam in insulation material inside deposition and corrosion, thus ensures at crystalline substance
In bulk-growth overall process, top insulation material maintains constant heat insulation effect, thus ensures the stability of crystal growth.
Brief description
Fig. 1 is structural representation of the present utility model.
Wherein: crucible 1, backplate the 2nd, heater the 3rd, closure insulation the 4th, side heat-insulation layer the 5th, end heat-insulation layer the 6th, induction coil the 7th, carborundum
Raw material the 8th, carborundum crystals 9.
Detailed description of the invention
In order to enable those skilled in the art more to understand technical solutions of the utility model, 1 to this below in conjunction with the accompanying drawings
Utility model is further analyzed.
As it is shown in figure 1, a kind of mitigate the thermal field structure that top insulation material is corroded, including crucible 1, backplate 2, heater
3, closure insulation 4, side heat-insulation layer 5, end heat-insulation layer 6, wherein heater 3 be positioned at crucible 1 periphery, the side surrounding crucible 1 and
Bottom surface, closure insulation 4 is positioned above crucible 1, and backplate 2 is positioned at below closure insulation 4, and covers closure insulation lower surface, and side is protected
Temperature layer the 5th, end heat-insulation layer 6 lays respectively at heater 3 periphery and bottom.In crystal growing process, due to closure insulation 4 and backplate 2
Temperature is less than crucible 1 temperature, and SiC steam fall preferential deposition is on backplate 2 surface, and closure insulation can keep at crystal growing process
Substantially invariable keeping warm mode.
Backplate 2 is more than 10mm with crucible 1 top spacing, and backplate 2 can block closure insulation 4 lower surface, mesopore surface.Position
Backplate 2 number of plies below closure insulation 4 can be more than 1 layer.The graphite material porosity selected when crucible 1 increases or growth temperature
When higher, the SiC quantity of steam penetrating crucible 1 leakage increases, and can improve its protective capability by the number of plies increasing backplate 2.
Structure described in the utility model uses this patent to set at SiC crystal growth top insulation lower surface and thermometer hole position
The graphite parts of meter wraps up, and the SiC steam going out long brilliant process leaks carries out blocking and water conservancy diversion, it is to avoid SiC steam is being protected
Adiabator inside deposition and corrosion, thus ensure in crystal growth overall process, top insulation material maintains constant insulation effect
Really, thus ensure the stability of growth technique.
Being described in detail technical scheme provided herein above, embodiment used herein is to the application
Principle and embodiment be set forth, the explanation of above example is only intended to help and understands the present processes and core thereof
Thought is thought；Simultaneously for one of ordinary skill in the art, according to the thought of the application, at detailed description of the invention and application model
Placing and all will change, in sum, this specification content should not be construed as the restriction to the application.
Claims (4)
1. one kind mitigates the thermal field structure that top insulation material is corroded, it is characterised in that: include crucible, backplate, heater, top
Heat-insulation layer, side heat-insulation layer and end heat-insulation layer；Described heater is positioned at crucible periphery, the side surrounding crucible and bottom surface；Institute
The closure insulation stated is positioned above crucible, and described backplate is positioned at below closure insulation, and covers closure insulation lower surface；Described
Side heat-insulation layer and end heat-insulation layer lay respectively at heater periphery and bottom.
2. according to claim 1 a kind of mitigate the thermal field structure that top insulation material is corroded, it is characterised in that: described
Backplate and crucible top spacing be more than 10mm.
3. according to claim 1 a kind of mitigate the thermal field structure that top insulation material is corroded, it is characterised in that: top
Heat-insulation layer uses graphite soft felt or the hard felt material of graphite.
4. according to claim 1 a kind of mitigate the thermal field structure that top insulation material is corroded, it is characterised in that: described
Be positioned at the backplate number of plies below closure insulation as required, may select one or more layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620576078.2U CN205711037U (en) | 2016-06-14 | 2016-06-14 | A kind of mitigate the thermal field structure that top insulation material is corroded |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620576078.2U CN205711037U (en) | 2016-06-14 | 2016-06-14 | A kind of mitigate the thermal field structure that top insulation material is corroded |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205711037U true CN205711037U (en) | 2016-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620576078.2U Active CN205711037U (en) | 2016-06-14 | 2016-06-14 | A kind of mitigate the thermal field structure that top insulation material is corroded |
Country Status (1)
| Country | Link |
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| CN (1) | CN205711037U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
-
2016
- 2016-06-14 CN CN201620576078.2U patent/CN205711037U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zheng Qingchao Inventor after: Gao Yu Inventor after: Yang Kun Inventor before: Zheng Qingchao Inventor before: Gao Yu Inventor before: Yang Kun |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071051 4th floor, block B, building 6, University Science Park, 5699 North 2nd Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |