CN205657079U - A multiple quantum well structure for photoelectric device - Google Patents
A multiple quantum well structure for photoelectric device Download PDFInfo
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- CN205657079U CN205657079U CN201521107595.7U CN201521107595U CN205657079U CN 205657079 U CN205657079 U CN 205657079U CN 201521107595 U CN201521107595 U CN 201521107595U CN 205657079 U CN205657079 U CN 205657079U
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Abstract
The utility model relates to a multiple quantum well structure for photoelectric device is applied to nitride -based photoelectric device, and this photoelectric device includes by the N type semiconductor layer on base plate to top layer, multiple quantum well, P type electron barrier layer and P type semiconductor layer, multiple quantum well is formed by barrier layer and potential well layer overlap, and in multiple quantum well structure, the thickness that is close to most P type semiconductor layer's potential well layer indium component is less than other potential well layers, so can compensate the influence of potential well layer because of receiving electron barrier layer piezoelectricity field of being close to P type semiconductor layer most, improve the band gap slope problem big than other potential well layers, utilize engineering adjustment mode to reach effective improvement nitride -based photoelectric device's luminous purity.
Description
[technical field]
This utility model relates to optoelectronic device structure technology, particularly relates to a kind of multiple quantum trap structure for photoelectric device.
[background technology]
Multiple quantum trap and electronic barrier layer are two kinds of structures being widely used on gallium nitride base photoelectric device, the photoelectric device of multiple quantum trap is compared with traditional double heterojunction photoelectric device, there is the advantage that luminous efficiency is higher, and electronic barrier layer can increase electronics and the hole probability of recombination at multiple quantum trap, with improving luminous efficiency.
The multiple quantum trap structure of gallium nitride base photoelectric device is to be formed by the material of two kinds of different band gap is overlapping, wherein potential well layer is generally InGaN, and barrier layer is generally gallium nitride, make to there is stress between the two because potential well layer is different with the lattice paprmeter of barrier layer composition material, this stress can produce piezoelectric field and cause the band gap limit of SQW to be changed into triangle by square, p-type gallium nitride side is relatively low, N-shaped gallium nitride side is higher, make the band gap width between conduction band and valence band diminish, cause emission wavelength elongated.
Additionally in the side of gallium nitride base photoelectric device multiple quantum trap structure adjacent p-type gallium nitride, the electronic barrier layer with aluminium gallium nitride alloy as material of typically growing up, to reduce electronics overflow to p-type gallium nitride；As shown in Figure 1, because the differences between lattice constant of electronic barrier layer (aluminium gallium nitride alloy) and potential well layer (InGaN) composition material is bigger, by bigger than other potential well layer for the piezoelectric field that makes last potential well layer of multiple quantum trap structure be subject to, so that the emission wavelength of last potential well layer is more longer than other potential well layer, this will affect the optical purity of photoelectric device.
[utility model content]
Not enough in order to solve prior art, this utility model provides a kind of multiple quantum trap structure that can be effectively improved photoelectric device luminance purity.
In order to realize foregoing invention purpose, the technical solution adopted in the utility model is:
A kind of multiple quantum trap structure for photoelectric device, this photoelectric device includes the n type semiconductor layer by substrate to top layer, multiple quantum well layer, P-type electron barrier layer and p type semiconductor layer；Described multiple quantum well layer is to be formed by barrier layer and potential well layer are overlapping, and in multiple quantum well layer structure, the thickness near the potential well layer indium component of p type semiconductor layer is less than other potential well layer.
Preferably, described barrier layer is gallium nitride.
Preferably, described potential well layer is InGaN.
Preferably, described P-type electron barrier layer is aluminium gallium nitride alloy.
Preferably, the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer indium component, makes the band gap width of potential well layer more than other potential well layer.
Preferably, the potential well layer band gap width near p type semiconductor layer is more than the amplitude of other potential well layer band gap width between 0.01 electron-volt to 0.1 electron-volt.
Preferably, the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer thickness, makes the thickness of potential well layer less than other potential well layer.
Preferably, the potential well layer thickness near p type semiconductor layer is less than the amplitude of other potential well layer thickness between 0.05 nm to 0.5 nm.
The beneficial effects of the utility model are:
This utility model utilizing works adjusts mode, in multiple quantum well layer structure, adjust potential well layer indium component or thickness near p type semiconductor layer and be less than other potential well layer, the potential well layer band gap width near p type semiconductor layer is made to be more than other potential well layer 0.01 electron-volt to 0.1 electron-volt, or make to be less than other potential well layer in 0.05 nm to 0.5 nm near the potential well layer thickness of p type semiconductor layer, so can compensate near p type semiconductor layer potential well layer because being affected by electronic barrier layer piezoelectric field, improve band gap and tilt the problem big compared with other potential well layer, to reach to be effectively improved the luminance purity of gallium nitride base photoelectric device.
[accompanying drawing explanation]
Fig. 1 is gallium nitride base photoelectric device multiple quantum trap bandgap structure schematic diagram in prior art；
Fig. 2 is this utility model embodiment one gallium nitride base photoelectric device multiple quantum trap bandgap structure schematic diagram；
Fig. 3 is this utility model embodiment nitride gallio photoelectric device multiple quantum trap bandgap structure schematic diagram.
[detailed description of the invention]
Embodiment one
A kind of multiple quantum trap structure for photoelectric device, as in figure 2 it is shown, this photoelectric device includes the n type semiconductor layer by substrate to top layer, multiple quantum well layer, P-type electron barrier layer and p type semiconductor layer；Described multiple quantum well layer is to be formed by barrier layer and potential well layer are overlapping, and wherein, barrier layer is gallium nitride, and potential well layer is InGaN, and P-type electron barrier layer is aluminium gallium nitride alloy；In multiple quantum well layer structure, potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer indium component, make the band gap width of potential well layer more than other potential well layer, wherein, potential well layer band gap width near p type semiconductor layer is more than the amplitude of other potential well layer band gap width between 0.01 electron-volt to 0.1 electron-volt, so can compensate near p type semiconductor layer potential well layer because the piezoelectric field by electronic barrier layer is affected, adjust band gap and tilt the problem big compared with other potential well layer, improve the luminance purity of gallium nitride base photoelectric device.
Embodiment two
This embodiment only difference is that with embodiment one, as shown in Figure 3, in multiple quantum well layer structure, potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer thickness, make the thickness of potential well layer less than other potential well layer, wherein, potential well layer thickness near p type semiconductor layer is less than the amplitude of other potential well layer thickness between 0.05 nm to 0.5 nm, so can compensate near p type semiconductor layer potential well layer because the piezoelectric field by electronic barrier layer is affected, the same band gap that adjusts tilts the problem big compared with other potential well layer.It is effectively improved the luminance purity of gallium nitride base photoelectric device equally.
Pass through above example, the mode that utilizing works adjusts, in multiple quantum well layer structure, adjust potential well layer indium component or thickness near p type semiconductor layer and be less than other potential well layer, the potential well layer band gap width near p type semiconductor layer is made to be more than other potential well layer 0.01 electron-volt to 0.1 electron-volt, or make to be less than other potential well layer in 0.05 nm to 0.5 nm near the potential well layer thickness of p type semiconductor layer, compensate near p type semiconductor layer potential well layer because being affected by electronic barrier layer piezoelectric field, improve band gap and tilt the problem big compared with other potential well layer, to reach to be effectively improved the luminance purity of gallium nitride base photoelectric device.
Embodiment described above is simply preferred embodiment of the present utility model, not limits practical range of the present utility model, all equivalence changes made according to the principle of this utility model with this, all should be covered by protection domain of the present utility model.
Claims (8)
1., for a multiple quantum trap structure for photoelectric device, this photoelectric device includes the n type semiconductor layer by substrate to top layer, multiple quantum well layer, P-type electron barrier layer and p type semiconductor layer；It is characterized in that:
Described multiple quantum well layer is to be formed by barrier layer and potential well layer are overlapping, and in multiple quantum well layer structure, the thickness near the potential well layer indium component of p type semiconductor layer is less than other potential well layer.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 1, it is characterised in that described barrier layer is gallium nitride.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 1, it is characterised in that described potential well layer is InGaN.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 1, it is characterised in that described P-type electron barrier layer is aluminium gallium nitride alloy.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 1, it is characterised in that the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer indium component, makes the band gap width of potential well layer more than other potential well layer.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 5, it is characterised in that the potential well layer band gap width near p type semiconductor layer is more than the amplitude of other potential well layer band gap width between 0.01 electron-volt to 0.1 electron-volt.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 1, it is characterised in that the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer thickness, makes the thickness of potential well layer less than other potential well layer.
A kind of multiple quantum trap structure for photoelectric device the most according to claim 7, it is characterised in that the potential well layer thickness near p type semiconductor layer is less than the amplitude of other potential well layer thickness between 0.05 nm to 0.5 nm.
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| CN201521107595.7U CN205657079U (en) | 2015-12-25 | 2015-12-25 | A multiple quantum well structure for photoelectric device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514235A (en) * | 2015-12-25 | 2016-04-20 | 扬州德豪润达光电有限公司 | Multiple-quantum well structure for optoelectronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514235A (en) * | 2015-12-25 | 2016-04-20 | 扬州德豪润达光电有限公司 | Multiple-quantum well structure for optoelectronic device |
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