CN205621733U - Broad -spectrum imaging detection chip - Google Patents
Broad -spectrum imaging detection chip Download PDFInfo
- Publication number
- CN205621733U CN205621733U CN201620197159.1U CN201620197159U CN205621733U CN 205621733 U CN205621733 U CN 205621733U CN 201620197159 U CN201620197159 U CN 201620197159U CN 205621733 U CN205621733 U CN 205621733U
- Authority
- CN
- China
- Prior art keywords
- wide spectrum
- imaging detection
- detection chip
- light
- spectrum imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model discloses a broad -spectrum imaging detection chip. Including heat radiation structure and light sensitive array. Broad -spectrum incident light wave gets into after the heat radiation structure, produce equally from the excimer in nanometer point surface excitation, free electron in the drive pattern metal film produces oscillatory to the nanometer point and gathers, free electron that nanometer point was collected drives the free electron looks coincide that pours in under controlling with equal from the excimer, the pulsation of production compressibility, make rapid intensification of electron and peripherad airspace transmission main component be the hot electromagnetic radiation of visible light, the light sensitive array converts hot electromagnetic radiation into the signal of telecommunication, obtain electron image data and output after the preliminary treatment. The utility model discloses can incide the light wave with the broad -spectrum realizes secondary light visible radiation and then carries out photoelectric conversion and one -tenth graphic operation to have the characteristics that wave spectrum application scope is wide, the photoelectric sensitivity is high, the photoelectric respone is fast and the cost is cheap relatively based on the compression at the high temperature electron motion of receiving in the space.
Description
Technical field
This utility model belongs to imaging detection technical field, more particularly, to a kind of wide spectrum imaging detection chip, realizes imaging detection based on the thermal light emission and further opto-electronic conversion being compressed in the sharp high-temperature electric edema of the legs during pregnancy of nanometer.
Background technology
The object or person work structure of matter in nature is in addition to outwardly launching electromagnetic radiation, also reflect or scatter from the sun, the moon, the earth, celestial body and other diversified natural or artificial light field, including typical ultraviolet light, visible ray, infrared light and far infrared/THz light etc..The mankind pass through the most typical photographing unit of multiple Imager Architecture and the video camera etc. set up, and obtain energy that its feature spectral coverage electromagnetic beam of target transported and the image information that diversity spatial distribution is represented thereof.Up to now, establish the imaging detection frameworks such as ultraviolet, visible ray, infrared and THz according to electromagnetic spectrum feature the most respectively, develop highly sensitive and based on photo-thermal effect etc. the light-sensitive material of corresponding photon type and photoelectric chip, imaging optical system and the electronics treatment technology of general character.Generally speaking, the light-sensitive material being applicable to different spectral coverage or the device structure that are developed based on existing industrial level all present particularity, as mainly used nitride for ultraviolet sensitivity, visible light wave range is mainly by silica-based CCD or CMOS system, and infrared band mainly uses such as particular semiconductor material such as typical Ge, Si, HgCdTe, InSb, sulfide and selenides.For the photon type light-sensitive device of specific spectral domain, transition or its detection usefulness of linking region between spectral domain will be greatly reduced and to disappearing.Another kind of detection material based on light pyroelectric effect and device the most also obtain flourish, although its photoelectric sensitivity and photoelectric response speed are far below photon type device, but in ultraviolet, visible ray and the spectral domain such as infrared have shown the photoelectricity sensing usefulness that can meet conventional photosensitive or imaging application the most, some silicon/porous silicon-base MEMS detector even shows the photoelectric respone ability that can cover ultraviolet to this broad spectral domain of infrared/far infrared, thus illustrate the development potentiality setting up wide spectrum imaging detection framework, this feature is at present still showing coarse far infrared/THz frequency range electromagnetic surveying field, wave beam perception based on relatively high light irradiation and Active Imaging ability are shown.
Although the photosensitive structure that can be operated in relatively wide range territory has obtained rapid progress in part category, performance indications and application aspect at present, lifting day by day for human lives's quality, background environment increasingly sophisticated, energy weak signal target, Stealthy Target, imaging detection under antagonism target, the most even In Hypersonic Flow target etc. day by day highlight then show that obvious ability is short of.Subject matter is summed up to get up to have: electronics or magnetic physical property that the electronic band system transition that (one) photon type light-sensitive material is based primarily upon under photon excitation is represented change, arrowband in view of existing semiconductor photosensitive material, the photon frequency responded is only capable of being distributed in an extremely limited spectral domain of bandwidth, typical technology measure for broadband response then includes continuing structure composite band based material or the light-sensitive material of the most multiple band system of direct splicing two kinds, thus brings the most insoluble problem of many complexity in terms of material configuration or micro structure coupling；(2) there is the optothermal detector of broad spectrum activity, such as typical pyroelectricity material, the photosensitive framework of MEMS and thermoelectricity light-sensitive material etc., because of membrane structure based on the micro-meter scale sensing energy that transports of light, present that thermal inertia is big, temperature resolution is low, response sensitivity less than more than one magnitude of photon type device, thermal noise is strong, spectrum response rises and falls notable or there is the problems such as machinery inertial；(3) currently acquired wide variety of low cost CMOS Photosensitive Technique, because the build-in attribute of light-sensitive material is only capable of being operated in visible ray and near-infrared spectral domain；(4) the nanotube base light-sensitive material of currently acquired extensive concern, response spectral coverage this problem narrow is equally existed under photonic propulsion detection mode, can realize containing ultraviolet, visible ray, the infrared and photodetector of this broad spectral domain of THz by parallel different pore size tubing of laying although having under light heat pattern, but because there is substantial amounts of structure, control and the difficult problem such as micropackaging are driven in technique, electronics coupling, are the most still difficult to commercialization；(5) other such as grapheme material and superstructure materials etc., then be based primarily upon special electro-optical resonance response and form the light sensing structure of specific frequency spectrum, be still in phase of basic research.In a word, development be applicable to ultra-wide spectral domain, structure little/be miniaturized, drive control flexibly, respond sensitive, the photosensitive framework of relative low price, be focus and the difficulties of development wide spectrum imaging detection chip technology at present, receive extensive concern and attention.
Utility model content
Disadvantages described above or Improvement requirement for prior art, this utility model provides a kind of wide spectrum imaging detection chip, wide spectrum incident light wave can be realized secondary visible radiation based on being compressed in the high-temperature electronic motion receiving in space and then perform opto-electronic conversion and become graphic operation, there is wave spectrum scope of application width, photoelectric sensitivity height, photoelectric respone soon and the feature of relative inexpensiveness.
For achieving the above object, this utility model provides a kind of wide spectrum imaging detection chip, it is characterised in that include thermal radiation arrangement and light-sensitive array；Described thermal radiation arrangement includes patterned metal film, described patterned metal film is provided with the nano-pore of m × n element array distribution, described thermal radiation arrangement is divided into the heat radiation unit of m × n element array distribution, described nano-pore and described heat radiation unit one_to_one corresponding, wherein, m, n are the integer more than 1；Each described nano-pore forms at least one point of the nanometer with sharp comer structure, and each photosensitive unit of described light-sensitive array couples with multiple nano-pores coupling；After wide spectrum incident light wave enters described thermal radiation arrangement, phasmon is produced at described nanometer point surface actuator, drive the free electron in described patterned metal film to produce oscillatory to described nanometer point to gather, the free electron that described nanometer point is collected drives the free electron poured under control and is superimposed with phasmon, generation compressibility is pulsed, make electronics steep temperature rise and launch the thermal electromagnetic radiation being mainly composed of visible ray to ambient airspace, thermal electromagnetic radiation is converted to the signal of telecommunication by described light-sensitive array, obtains electrical image data after pretreatment and exports.
Preferably, the sharpening degree of described nanometer point is the highest, then its place to receive the electron density can gathered or compress in metric space the biggest, thermal electromagnetic radiation intensity is the highest.
Preferably, the described nanometer point number in described patterned metal film unit are is the most, then the thermal light emission intensity arriving photosensitive unit is the biggest, and the photoelectric respone signal of photosensitive unit is the strongest.
Preferably, the light intensity of described wide spectrum incident light wave is the biggest, then the intensity of the phasmon of its encouraged generation is the highest, drives the electron amount to described nanometer point the biggest, and the thermal light emission ability of described nanometer point is the strongest.
Preferably, by changing configuration and the arrangement density of described nanometer point, the frequency of the wide spectrum incident light wave that described wide spectrum imaging detection chip can sense is changed.
Preferably, described thermal radiation arrangement also includes electricity isolated layer and the protecting film being separately positioned on described patterned metal film two sides.
Preferably; above-mentioned wide spectrum imaging detection chip also includes ceramic package; described thermal radiation arrangement couples and is encapsulated in described ceramic package with the coaxially order arrangement of described light-sensitive array; the top of described ceramic package is provided with light incidence window; make described protecting film exposed outside, be used for receiving extraneous incident field.
Preferably, described ceramic package is provided with port and display lamp, described port is for instructing from the external world to described wide spectrum imaging detection chip input service, and outwardly exports electrical image data, and described display lamp is used for indicating whether described wide spectrum imaging detection chip is in normal operating conditions.
In general, by the contemplated above technical scheme of this utility model compared with prior art, have the advantages that
1, by the patterned metal film containing nanohole array is coupled with the light-sensitive array of visible ray spectral domain, the space compression of the light intensity completing visible ray incident wave beam based on the thermal light emission being compressed in the high-temperature electric edema of the legs during pregnancy received in metric space strengthens, and infrared and THz incident wave direction visible ray emergent radiation conversion and opto-electronic conversion with become graphic operation, have the advantages that to be applicable to wide spectrum radiation.
2, the electron gas heat radiation received in the metric space sensing retrained based on nanometer point with becomes graphic operation, because hot-zone is minimum and easily realizes radiating modulation by the redistribution of the space of electronics, there is radiometric resolution height and the sensitive feature of photoelectric respone.
3, electronics the gathering and thermal light emission effect at nanometer point during the phasmon encouraged based on wide spectrum incident radiation drives control metal film, have the advantages that to detect extremely low energy state incident field.
4, the hot light re-radiation receiving electron gas in yardstick spatial domain based on metal flat nanometer point and light sensitive effect, device noise is mostly derived from coupled visible ray spectral domain photosensitive structure, has the advantages that noise is low.
5, have be easily inserted in conventional imaging light path replace traditional photosensitive imager chip perform wide spectrum imaging detection feature.
Accompanying drawing explanation
Fig. 1 is the structural representation of the wide spectrum imaging detection chip of this utility model embodiment；
Fig. 2 is the optical imagery application configuration schematic diagram of the wide spectrum imaging detection chip of this utility model embodiment；
Fig. 3 is the nanohole array arrangement schematic diagram of the wide spectrum imaging detection chip of this utility model embodiment；
Fig. 4 is the configuration schematic diagram of the local nanohole array of this utility model embodiment；
Fig. 5 is typical nano-pore structure.
In all of the figs, identical reference is used for representing identical element or structure, wherein: 1-ceramic package; 2-display lamp, 3-port, 4-light-sensitive array; 5-electricity isolated layer, 6-patterned metal film, 7-protecting film; 8-light incidence window; 9-wide spectrum imaging detection chip, 10-imaging optical system, 11-nano-pore; 12-nanometer point, 13-transparent optical substrate interface.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, this utility model is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain this utility model, is not used to limit this utility model.As long as just can be mutually combined additionally, technical characteristic involved in each embodiment of this utility model disclosed below does not constitutes conflict each other.
Fig. 1 is the structural representation of the wide spectrum imaging detection chip of this utility model embodiment.As shown in the figure; the two sides of patterned metal film 6 is respectively equipped with electricity isolated layer 5 and protecting film 7; form thermal radiation arrangement; thermal radiation arrangement order coaxial with light-sensitive array 4 arrangement couples and is encapsulated in ceramic package 1; the top of ceramic package 1 is provided with light incidence window 8; make protecting film 7 exposed outside, be used for receiving extraneous incident field.Being additionally provided with port 3 and display lamp 2 on ceramic package 1, port 3 is for instructing from the external world to wide spectrum imaging detection chip input service, and outwardly exports electrical image data.Display lamp 2 is used for indicating whether wide spectrum imaging detection chip is in normal operating conditions, when wide spectrum imaging detection chip is in normal operating conditions, and display lamp 2 hook switch flash.Patterned metal film 6 is nanometer grade thickness, and light-sensitive array 4 is the light-sensitive array of visible ray spectral domain, and electricity isolated layer 5 is transparent optical substrate, and its thickness is controlled in micro-meter scale, and protecting film 7 electrifies insulating effect simultaneously.
Fig. 2 is the optical imagery application configuration schematic diagram of the wide spectrum imaging detection chip 9 of this utility model embodiment.As shown in the figure, wide spectrum imaging detection chip 9 is placed at the focal plane of imaging optical system 10, the squeezed light field that optical system is formed is (for wide spectrum incident light wave, it is specifically as follows visible ray, one or more of infrared ray and THz radiation) enter patterned metal film 6 by the light incidence window 8 of wide spectrum imaging detection chip 9, the nanometer point surface actuator formed at nano-pore produces phasmon, free electron in drive pattern metal film produces oscillatory to nanometer point and gathers, the free electron that nanometer point is collected drives the free electron poured under control and is superimposed with phasmon, formed and be gathered in the high density electronics of nanometer point and produce compressibility pulsation；Dense electronics is compressed in receive and makes electronics steep temperature rise launching to ambient airspace be mainly composed of the thermal electromagnetic radiation of visible ray by producing severe thermal motion in metric space；The light-sensitive array of the visible ray spectral domain by coupling with patterned metal film captures nanometer point heat radiation and is converted into the signal of telecommunication, obtains electrical image data and export after pretreatment.
Fig. 3 is the nanohole array arrangement schematic diagram of the wide spectrum imaging detection chip of this utility model embodiment.As it can be seen, patterned metal film is provided with the nano-pore 11 of m × n element array distribution, thermal radiation arrangement being divided into the heat radiation unit of m × n element array distribution, nano-pore 11 and heat radiation unit one_to_one corresponding, wherein, m, n are the integer more than 1.Each nano-pore 11 is correspondingly formed at least one nanometer point 12 with sharp comer structure, and specifically, nano-pore 11 refers to that the pore structure of nanoscale, nanometer point 12 refer to the cutting-edge structure of nanoscale.Each photosensitive unit of light-sensitive array couples with multiple nano-pores 11 coupling, and the array scale of wide spectrum imaging detection chip is determined by the scale of light-sensitive array.The sharpening degree of nanometer point 12 is the highest, then its place to receive the electron density can gathered or compress in metric space the biggest, thermal electromagnetic radiation intensity is the highest；Nanometer point number in patterned metal film unit are is the most, then the thermal light emission intensity arriving photosensitive unit is the biggest, and photosensitive unit photoelectric respone signal in the range of normal light electroresponse is the strongest.
By constructing nanometer point array according to specific period on the metallic film of nano thickness, the free electron can effectively driven in metal is assembled to nanometer point；Simultaneously under the incident light wave excitation of the characteristic frequency in being distributed in the spectral domains such as visible ray, infrared and THz, encourage phasmon at array metal flat nanometer point body structure surface, order about the electronics receiving in metal pattern further and assemble to nanometer point；Incident intensity is the biggest, and the intensity of the phasmon encouraged is the highest, drives the electron amount to metal flat nanometer point the biggest, and the thermal light emission ability of nanometer point is the strongest.By changing configuration and the arrangement density of nanometer point, the frequency of the incident light wave sensed will change.Fig. 4 gives the configuration of local nanohole array, including use electron beam or focused ion beam etching to dig to wear metal film to formed at transparent optical substrate interface 13, have receive the nano-pore in size aperture and the metal flat nanometer being connected with metal film by metallic walls therein sharp etc..
Defining the ratio that the area that nano-pore activity coefficient is single nano-pore accounts for the area of heat radiation unit, its value should be not less than 65%.Single nano-pore can form one, two, the most multiple nanometer point, increase nanometer point number can strengthen thermal light emission usefulness thus indirectly strengthen photoelectric respone and detectivity, Fig. 5 gives the situation forming 1 to 4 nanometer point, according to detection target and process condition, nanometer point quantity can increase further.
Work process the following detailed description of the wide spectrum imaging detection chip of this utility model embodiment.First can provide power supply, control signal and the parallel line access interface 3 of data transmission by one group, input the work order driving control light-sensitive array 4 the most respectively, now imaging detection chip starts to perform the operation of wide spectrum imaging detection；In above-mentioned work process, display lamp 2 is continuously turned on flicker.
Wide spectrum imaging detection chip of the present utility model, wide spectrum incident light wave can be converted into secondary visible radiation based on being compressed in the high-temperature electronic motion receiving in space and then perform opto-electronic conversion and become graphic operation, there is wave spectrum scope of application width, photoelectric sensitivity height, photoelectric respone soon and the feature of relative inexpensiveness.
Those skilled in the art is easy to understand; the foregoing is only preferred embodiment of the present utility model; not in order to limit this utility model; all any amendment, equivalent and improvement etc. made within spirit of the present utility model and principle, within should be included in protection domain of the present utility model.
Claims (8)
1. a wide spectrum imaging detection chip, it is characterised in that include thermal radiation arrangement and light-sensitive array；Described thermal radiation arrangement includes patterned metal film, described patterned metal film is nanometer grade thickness, which is provided with the nano-pore of m × n element array distribution, described thermal radiation arrangement is divided into the heat radiation unit of m × n element array distribution, described nano-pore and described heat radiation unit one_to_one corresponding, wherein, m, n are the integer more than 1；Each described nano-pore forms at least one point of the nanometer with sharp comer structure, and each photosensitive unit of described light-sensitive array couples with multiple nano-pores coupling；
After wide spectrum incident light wave enters described thermal radiation arrangement, phasmon is produced at described nanometer point surface actuator, drive the free electron in described patterned metal film to produce oscillatory to described nanometer point to gather, the free electron that described nanometer point is collected drives the free electron poured under control and is superimposed with phasmon, generation compressibility is pulsed, make electronics steep temperature rise and launch the thermal electromagnetic radiation being mainly composed of visible ray to ambient airspace, thermal electromagnetic radiation is converted to the signal of telecommunication by described light-sensitive array, obtains electrical image data after pretreatment and exports.
2. wide spectrum imaging detection chip as claimed in claim 1, it is characterised in that the sharpening degree of described nanometer point is the highest, then its place to receive the electron density can gathered or compress in metric space the biggest, thermal electromagnetic radiation intensity is the highest.
3. wide spectrum imaging detection chip as claimed in claim 1, it is characterised in that the described nanometer point number in described patterned metal film unit are is the most, then the thermal light emission intensity arriving photosensitive unit is the biggest, and the photoelectric respone signal of photosensitive unit is the strongest.
4. wide spectrum imaging detection chip as claimed in claim 1, it is characterized in that, the light intensity of described wide spectrum incident light wave is the biggest, then the intensity of the phasmon of its encouraged generation is the highest, driveing the electron amount to described nanometer point the biggest, the thermal light emission ability of described nanometer point is the strongest.
5. wide spectrum imaging detection chip as claimed in claim 1, it is characterised in that by changing configuration and the arrangement density of described nanometer point, change the frequency of the wide spectrum incident light wave that described wide spectrum imaging detection chip can sense.
6. the wide spectrum imaging detection chip as according to any one of claim 1 to 5, it is characterised in that described thermal radiation arrangement also includes electricity isolated layer and the protecting film being separately positioned on described patterned metal film two sides.
7. wide spectrum imaging detection chip as claimed in claim 6; it is characterized in that; also include ceramic package; described thermal radiation arrangement couples and is encapsulated in described ceramic package with the coaxially order arrangement of described light-sensitive array; the top of described ceramic package is provided with light incidence window; make described protecting film exposed outside, be used for receiving extraneous incident field.
8. wide spectrum imaging detection chip as claimed in claim 7, it is characterized in that, described ceramic package is provided with port and display lamp, described port is for instructing from the external world to described wide spectrum imaging detection chip input service, and outwardly exporting electrical image data, described display lamp is used for indicating whether described wide spectrum imaging detection chip is in normal operating conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620197159.1U CN205621733U (en) | 2016-03-15 | 2016-03-15 | Broad -spectrum imaging detection chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620197159.1U CN205621733U (en) | 2016-03-15 | 2016-03-15 | Broad -spectrum imaging detection chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205621733U true CN205621733U (en) | 2016-10-05 |
Family
ID=57030870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620197159.1U Active CN205621733U (en) | 2016-03-15 | 2016-03-15 | Broad -spectrum imaging detection chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205621733U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810704A (en) * | 2016-03-15 | 2016-07-27 | 华中科技大学 | Broad-spectrum imaging detection chip |
| CN109781265A (en) * | 2019-01-28 | 2019-05-21 | 南京奥谱依电子科技有限公司 | A kind of imaging detection chip of coupled optical antennas and preparation method thereof |
| CN109781250A (en) * | 2019-01-28 | 2019-05-21 | 南京奥谱依电子科技有限公司 | Photosensitive imaging detection chip and preparation method thereof based on sophisticated electronic fluorescent excitation |
| WO2020155818A1 (en) * | 2019-01-28 | 2020-08-06 | 南京奥谱依电子科技有限公司 | Imaging detection chip coupled with optical antenna, and preparation method therefor |
-
2016
- 2016-03-15 CN CN201620197159.1U patent/CN205621733U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810704A (en) * | 2016-03-15 | 2016-07-27 | 华中科技大学 | Broad-spectrum imaging detection chip |
| CN105810704B (en) * | 2016-03-15 | 2018-06-12 | 华中科技大学 | A kind of wide spectrum imaging detection chip |
| CN109781265A (en) * | 2019-01-28 | 2019-05-21 | 南京奥谱依电子科技有限公司 | A kind of imaging detection chip of coupled optical antennas and preparation method thereof |
| CN109781250A (en) * | 2019-01-28 | 2019-05-21 | 南京奥谱依电子科技有限公司 | Photosensitive imaging detection chip and preparation method thereof based on sophisticated electronic fluorescent excitation |
| WO2020155818A1 (en) * | 2019-01-28 | 2020-08-06 | 南京奥谱依电子科技有限公司 | Imaging detection chip coupled with optical antenna, and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205621733U (en) | Broad -spectrum imaging detection chip | |
| CN105810704B (en) | A kind of wide spectrum imaging detection chip | |
| CN101038211B (en) | Detection device and image forming device | |
| CN109755331B (en) | Narrow-band photoelectric detector based on plasmon-photon mode coupling | |
| CN105308626A (en) | Biometric imaging devices and associated methods | |
| US20040104344A1 (en) | Radiation sensor with photo-thermal gain | |
| CN102175329A (en) | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane | |
| Bianconi et al. | Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity | |
| Kim et al. | Whispering gallery modes enhance the near-infrared photoresponse of hourglass-shaped silicon nanowire photodiodes | |
| CN105405857B (en) | Silicon substrate and the fully integrated imaging sensor of quantum dot and preparation method | |
| Jakšić | Micro and Nanophotonics for Semiconductor Infrared Detectors | |
| CN102569333A (en) | Imaging apparatus, electronic apparatus, photovoltaic cell, and method of manufacturing imaging apparatus | |
| CN102237432B (en) | Terahertz and infrared frequency band sensitive photon detector | |
| CN103969693A (en) | Photoelectric detection imaging system and method | |
| US8193497B2 (en) | Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same | |
| CN109686806A (en) | The spectral detector device and preparation method that a kind of visible light to near-infrared integrates | |
| CN107863411B (en) | Polarization imaging detector | |
| Wu et al. | Recent progress of narrowband perovskite photodetectors: Fundamental physics and strategies | |
| CN112054069A (en) | Integrated photoelectric detector based on disc super-surface structure narrow-band light filtering | |
| CN202066596U (en) | Infrared detector and multiband uncooled infrared focal plane | |
| CN207165573U (en) | A kind of single photon polarization imaging array with convergence filter function | |
| CN103314281A (en) | Radiation sensor | |
| CN115734629A (en) | CMOS quantum dot imaging chip and preparation method and driving method thereof | |
| CN114034395B (en) | Terahertz focal plane imaging detector, imaging system and imaging method | |
| CN107329285A (en) | Near-infrared absorption device based on ITO metal semiconductor structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |