CN205608062U - Current sensor device - Google Patents
Current sensor device Download PDFInfo
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- CN205608062U CN205608062U CN201620167949.5U CN201620167949U CN205608062U CN 205608062 U CN205608062 U CN 205608062U CN 201620167949 U CN201620167949 U CN 201620167949U CN 205608062 U CN205608062 U CN 205608062U
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The utility model provides a current sensor device, the cost can be reduce again to its current detection's that can enough avoid being aroused by the external magnetic field malfunction. This current sensor device does not have the magnetic core type, and it possesses: magnetic detecting element, it is examined and knows the produced magnetic flow of current path, and magnetic screen portion, it sets up around magnetic detecting element, shields to magnetic flow magnetic detecting element, that come from the outside, and magnetic screen portion possesses the 1st magnetic screen portion that comprises the 1st magnetism shielding material who has 1 relative permeability and the 2nd magnetic screen portion that comprises the 2nd magnetism shielding material who has the 2 relative permeability different with 1 relative permeability.
Description
Technical field
This utility model relates to current sensor apparatus, particularly relates to use the electric current without core type of magnetic detecting element to pass
Sensor arrangement.
Background technology
Current sensor apparatus is generally used for measuring the electric current of the battery feed etc. of automobile.As at current path
(hereinafter referred to as " bus " (bus bar).) etc. in electric lines of force (power line) electric current of flowing carry out the current detecting detected
Device, it is known to current sensing means as follows, utilizes and is arranged to circumferentially surround the collection magnetic magnetic core of bus,
According to the electric current flowed in the bus, make to carry out collecting magnetic at the magnetic flux produced about, and by by Hall element equimagnetic
Detecting element detects the magnetic flux of collected magnetic, detects electric current.
On the other hand, it is also proposed that do not use collection magnetic magnetic core but detect in the bus in the way of directly detection magnetic flux
The current sensor apparatus without core type of the electric current of flowing.According to such current sensor apparatus without core type,
Components number can be cut down, therefore, it is possible to miniaturization of the apparatus, it addition, because typically need not by the electromagnetic steel of high price
The collection magnetic magnetic core constituted, it is possible to make device cost degradation.
But, even if merely the current sensor apparatus without core type not using collection magnetic magnetic core to be used for the electricity of bus
Stream detection, also can capture the magnetic flux produced from other bus (bus of other such as, adjacent phase) etc. and by its shadow
Ring, therefore can not be correctly detected electric current.
Patent document 1 discloses that the current sensor apparatus possessing magnetic shielding material, this magnetic shielding material is for from outside
Magnetic shield detects the power semiconductor of electric current by detection magnetic flux.According to this current sensor apparatus, because
Possesses the magnetic shielding material arranged round power semiconductor, so reducing the impact made an uproar from outside magnetic.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2006-38640 publication
Utility model content
Utility model problem to be solved
Fig. 1 is the schematic cross sectional views of the current sensor apparatus of the existing magnetic shield structure possessing monolayer.Such as Fig. 1
Shown in, current sensor apparatus 1 possesses the such as Hall element equimagnetic arranged in the bus 15 as detection object
Detecting element (IC) 11.Additionally, in the outside of magnetic detecting element 11, also there is magnetic shield portion 21, this magnetic shield portion
21 shield magnetic flux for magnetic detecting element 11, from outside.Magnetic shield portion 21 is by having high relative permeability μ
Material constitute.
Therefore, even if current sensor apparatus 1 applies external magnetic field, magnetic flux 31 also is able to by relative permeability μ
High magnetic shield portion 21 senses, and reduces the external magnetic field impact on magnetic detecting element 11.Have shown in Fig. 1
In the structure in the magnetic shield portion of monolayer, as the magnetic shielding material in composition magnetic shield portion 21, use permeability alloys contour
Relative permeability material.But, the magnetic shielding material being made up of high relative permeability material because ratio higher price,
So the cost with current sensor apparatus uprises such problem.It addition, utilizing relative permeability to be less than magnetic conduction
In the case of the pure iron of alloy or silicon steel plate carry out magnetic shield, need that the thickness making magnetic shielding material is thickening carries out magnetic cup
Cover, thus have the most thickening cause maximization, be difficult to manufacture and the such problem of high price.Mesh of the present utility model
Be to provide can either avoid the misoperation of the current detecting caused by external magnetic field can cut down again cost electric current pass
Sensor arrangement.Other purpose is, makes magnetic shielding material thinning, makes current sensor apparatus miniaturization.
The means of solution problem
According to a viewpoint of the present utility model, it is possible to provide following such current sensor apparatus, this current sensor
Device is the current sensor apparatus without core type, and feature is to possess: magnetic detecting element, and its detection current path is produced
Raw magnetic flux；And magnetic shield portion, it is arranged at around above-mentioned magnetic detecting element, shields for above-mentioned Magnetic testi unit
Part, from outside magnetic flux (external magnetic field), above-mentioned magnetic shield portion possesses: by having the 1st relative permeability
The 1st magnetic shield portion that 1st magnetic shielding material is constituted；And by having 2nd different from above-mentioned 1st relative permeability
The 2nd magnetic shield portion that 2nd magnetic shielding material of relative permeability is constituted.
Be there is by setting the 1st magnetic shield portion and the 2nd magnetic shield portion of different relative permeabilities, can obtain good
Magnetic Shielding Effectiveness.
The most above-mentioned 2nd relative permeability is less than above-mentioned 1st relative permeability, in the outside in above-mentioned 1st magnetic shield portion
Configure above-mentioned 2nd magnetic shield portion.
The most above-mentioned 1st magnetic shield portion and above-mentioned 2nd magnetic shield portion the most u-shaped shape respectively, substantially in U
The recess in the above-mentioned 2nd magnetic shield portion of word shape connects the above-mentioned 1st magnetic shield portion arranging the most u-shaped shape.
Above-mentioned 2nd relative permeability can be less than above-mentioned 1st relative permeability, by above-mentioned 2nd magnetic shield portion and above-mentioned the
1 magnetic shield portion is connected in series.
Now, above-mentioned 1st magnetic shield portion can be the most relative with the sense magnetic surface of above-mentioned magnetic detecting element, above-mentioned 2nd magnetic cup
Cover portion substantially vertical with above-mentioned sense magnetic surface.
Here, it is preferred that there are two above-mentioned 1st magnetic shield portions and engage at least the 1 of two above-mentioned 1st magnetic shield portions
Individual above-mentioned 2nd magnetic shield portion, to the magnetic flux of an above-mentioned 1st magnetic shield portion input by above-mentioned 2nd magnetic shield portion,
And by output behind another above-mentioned 1st magnetic shield portion to outside.
It addition, the parameter for obtaining desired Magnetic Shielding Effectiveness can be determined according to below equation.
E(total)=E1×E2={ (μ1×d1)/S1}×{(μ2×d2)/S2}
The most above-mentioned magnetic shield portion have with above-mentioned magnetic detecting element sense magnetic surface generally perpendicular direction on arrange
Opening.
Above-mentioned current path can be configured in the opposition side of the above-mentioned opening of above-mentioned magnetic detecting element.
The most above-mentioned 1st relative permeability becomes more than 3000.
The most above-mentioned 2nd relative permeability becomes less than more than 100 2500.
Above-mentioned 1st magnetic shielding material can be Fe-Ni alloy/C, and above-mentioned 2nd magnetic shielding material becomes ferrite.
Above-mentioned 2nd magnetic shielding material can be formed by the material comprising magnetic material and resin material.
The thickness d in above-mentioned 1st magnetic shield portion1Can be 0.05mm～0.35mm, the thickness in above-mentioned 2nd magnetic shield portion
d2Become 3mm～10mm.
Utility model effect
According to this utility model, in current sensor apparatus, the current detecting caused by external magnetic field can either be suppressed
Misoperation, manufacturing cost can be cut down again.
Accompanying drawing explanation
Fig. 1 is the section view of a structure example of the existing current sensor apparatus of the magnetic shield structure illustrating and having monolayer
Figure.
Fig. 2 (a) is the current sensor illustrating double-deck magnetic shield structure with the 1st embodiment of the present utility model
The sectional view of one structure example of device.Fig. 2 (b) is its axonometric chart.Fig. 2 (c) is to illustrate the structure example different from Fig. 2 (a)
Sectional view.
Fig. 3 (a), Fig. 3 (b) are to illustrate for estimating without the dual shield magnetic core in the current sensor apparatus of core type
The figure of the phantom of shield effectiveness.
Fig. 4 is to illustrate the magnetic flux density (T) in the magnetic detecting element (IC) when the thickness of PB is fixed as 0.35mm
The figure of the thickness interdependence of MB4.
Fig. 5 is to illustrate the magnetic flux density (T) in the magnetic detecting element (IC) when the thickness of MB4 is fixed as 5mm
The figure of the thickness interdependence of PB.
Fig. 6 be illustrate the thickness of PB is fixed as 0.35mm, magnetic inspection time the thickness of MB4 is fixed as 5mm
The figure of the external magnetic field interdependence of the magnetic flux density (T) in survey element (IC).
Fig. 7 (a), Fig. 7 (b) are the sectional views of the current sensor apparatus of the 2nd embodiment of the present utility model.
Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) are the section views of the current sensor apparatus of the 3rd embodiment of the present utility model
Figure.
Fig. 9 (a), Fig. 9 (b) are the axonometric charts of the current sensor apparatus of the 4th embodiment of the present utility model.
Label declaration
1 ... current sensor apparatus, 11 ... magnetic detecting element (IC), 11a ... sense magnetic surface, 15 ... current path (bus),
20 ... magnetic shield portion, 21 ... the 1st magnetic shield portion, 23 ... the 2nd magnetic shield portion
Detailed description of the invention
Hereinafter, referring to the drawings, the current sensor apparatus of embodiment of the present utility model is described in detail.
(the 1st embodiment)
Fig. 2 (a) is the section view of a structure example of the current sensor apparatus exporting the 1st embodiment of the present utility model
Figure.Fig. 2 (b) is the axonometric chart of the current sensor apparatus shown in Fig. 2 (a).Hereinafter, with reference to define in the various figures x,
Y, z-axis illustrate.
As shown in Fig. 2 (a), Fig. 2 (b), the current sensor apparatus 1 of present embodiment possesses such as Hall element equimagnetic
Detecting element (later be also referred to as IC) 11, this magnetic detecting element be arranged on as detection object, extend with y-axis direction
Current path i.e. bus 15 on.As magnetic detecting element 11, such as can use Hall element, magnetoresistive element,
Any one in the Hall IC (IC:Integrated Circuit: integrated circuit) of combination Hall element and amplifier circuit etc.
Individual.As magnetoresistive element, aeolotropic magnetoresistive element AMR, huge magnetoresistive element GMR, tunnel can be used
Road magnetoresistive element TMR etc..
Additionally, current sensor apparatus 1 has magnetic shield portion 20, this magnetic shield portion 20 has sense magnetic surface 11a's
Magnetic detecting element 11 around, shields magnetic flux (external magnetic field) for magnetic detecting element 11, from outside.Magnetic
The shielding part 20 side of sidewall portion by side, the two sides setting in the x-axis direction at magnetic detecting element 11 and the end in z-axis direction
The wall portion that side, face is arranged is formed.Such as, in side, two sides, it is being fixed on base magnetic shield portion 20, not shown
Magnetic detecting element 11 can be installed on plate.The electric current of flowing in magnetic detecting element 11 is set to I1.In this instance, magnetic
Shielding part 20 has the width W applying direction (between two-terminal) i.e. y-axis direction than the voltage of magnetic detecting element 112Greatly
Width W1.In order to the width L of miniaturization/cost degradation, preferably X-direction is the shortest.
In the present embodiment, magnetic shield portion 20 has the magnetic shield structure of bilayer, the magnetic shield structure tool of this bilayer
Standby: to be made up of the 1st shielding material with the 1st relative permeability μ 1 and thickness is d1The 1st magnetic shield portion 21；
And there is the 2nd relative permeability μ 2 different for relative permeability μ 1 from the 1st and thickness is d2The 2nd magnetic shield portion
23.In this construction, the area of vertical with magnetic flux shielding part is S1=S2.At Fig. 2 (a), Fig. 2 (b), Fig. 2 (c)
In, although make the inner side of magnetic shielding material become sectional area S1、S2, but at d1、d2In the case of thin, even if using
The sectional area in the outside of magnetic shielding material also is able to obtain same effect.Here, the 2nd relative permeability μ 2 can be made
Less than the 1st relative permeability μ 1, and the 2nd magnetic shield portion 23 is arranged in the outside in the 1st magnetic shield portion 21.This
Outward, available binding agent bonds the 1st magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd, and available resin applies
(coating) two magnetic shield portions 21,23 are integrally forming.
According to above-mentioned structure, as shown in Fig. 2 (a), by based on the side from the x-axis direction of magnetic detecting element 11
A part of 31b of the magnetic flux 31 of the external magnetic field applied is directed into has the 2nd relative permeability μ2The 2nd magnetic shield
Portion 23, is also directed into magnetic flux 31a and has the 1st relative permeability μ1The 1st magnetic shield portion 21, it is possible to press down
The external magnetic field processed impact on magnetic detecting element 11.About from outside magnetic flux 31, enter into by low relative magnetic permeability
The magnetic flux in the 2nd magnetic shield portion 23 that rate material is formed flows to bottom on a small quantity, and substantial amounts of magnetic flux is by as high magnetic relatively
1st magnetic shield portion 21 of conductivity material.The magnetic flux inputted to magnetic shield portion is approximately uniform with the magnetic flux exported
Value.
Here, Magnetic Shielding Effectiveness during double-layer structural can be shown as below equation.That is, shielding material is entered into
The magnetic flux of inner side decay according to below equation.
E(total)=E1×E2={ (μ1×d1)/S1}×{(μ2×d2)/S2... formula (1)
Here, total Magnetic Shielding Effectiveness E is to make Magnetic Shielding Effectiveness E based on the 1st magnetic shield portion1With based on the 2nd magnetic
Magnetic Shielding Effectiveness E of shielding part2The value of the Magnetic Shielding Effectiveness of combination.It addition, μ is respective relative permeability, d is
Each thickness in the direction vertical with external magnetic field, S is the area of the magnetic shielding material in the direction vertical with external magnetic field
(it is generally S1=S2).E is become in the case of the magnetic shield portion of monolayer(total)=E1, work as E2It is more than 1
Time from formula (1), double-deck magnetic shield portion can obtain good effect.Even if the 2nd relative permeability μ2Step-down,
As long as making d2Thickening, it becomes possible to make E2Become more than 1.Additionally, total Magnetic Shielding Effectiveness E becomes double-layer structural
The product of each shield effectiveness, can prove that the most in theory compared with the situation of only monolayer, by using dual magnetic
Shielding structure also makes E2Become more than 1, i.e. by increasing μ2×d2, significant shield effectiveness can be obtained.
Additionally, the 2nd magnetic shielding material constituting the low relative permeability in the 2nd magnetic shield portion 23 is general and constitutes the 1st
1st magnetic shielding material of the high relative permeability of the high price in magnetic shield portion 21 is compared, it is possible to reduces cost, therefore can
Fee of material as magnetic shield portion 20 entirety is enough greatly reduced.I.e., it is possible to make the 1st magnetic shielding material of high cost
Lower thickness (reduction usage amount), it is possible to reduce cost.
Additionally, as shown in Fig. 2 (c), the 2nd magnetic shield portion 23 can be arranged in the inner side in the 1st magnetic shield portion 21.But
Also result in volume become big even if being because the thickness that outside is identical in such shape, thus from cut down cost this
From the viewpoint of sample, the more preferably structure shown in Fig. 2 (a).1st magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd is such as
Can be realized by the assembling procedure of respective parts.
As discussed above, according to the current sensor apparatus of present embodiment, have and can either suppress outside
The impact in magnetic field can reduce again the such advantage of cost.Additionally, in above-mentioned example, although different by having
Double-deck magnetic shielding material of relative permeability forms magnetic shield portion but it also may by the magnetic shielding material structure of more than 3 layers
Become, or the structure making relative permeability be changed in a thickness direction can be become.Furthermore it is possible in x-axis direction,
Z-axis side connects up the 1st magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd, or can configure the 1st magnetic cup dividually
Cover magnetic shield portion 23 of portion the 21 and the 2nd.
(embodiment 1)
In Fig. 2 (a), can make that there is the 1st relative permeability μ1The 1st magnetic shielding material such as become permeability alloys
PC material, makes have the 2nd relative permeability μ2The 2nd magnetic shielding material for example, ferrite (ferrite).Magnetic conduction closes
The relative permeability of gold PC material is more than 5000, and ferritic relative permeability is about 2000.Before by contrast
Person's price is high.The relative permeability of permeability alloys PC material thickness 0.1mm is several ten thousand～hundreds of thousands, permeability alloys
The relative permeability of PB material thickness 0.1mm is 10,000～20,000, is approximately 3000 in 0.35mm.Therefore, make
The thickness of permeability alloys is the thinnest, makes up the Magnetic Shielding Effectiveness of corresponding minimizing by arranging low-cost ferrite.
Such as, as long as the thickness of the 1st magnetic shielding material can utilize the 1st magnetic shield portion 21 to absorb from outside magnetic flux
In the thickness of the such degree of magnetic flux not absorbed by the 2nd magnetic shield portion 23 both may be used.
Additionally, permeability alloys (Permalloy) is alloy (alloy) such meaning of magnetic conductivity (permeable), magnetic conduction
Alloy, compared with electromagnetic soft iron, has the character of magnetic conductivity the highest (easily by magnetic force).Permeability alloys utilizes nickel
Amount is classified, and it possesses various feature.About PC permeability alloys (Ni-Mo, Cu-Fe), nickel composition be 70～
85%, relative permeability and DC characteristic are good.Processability is the highest, is suitable as magnetic shielding material.PB magnetic conduction closes
Gold (Ni-Fe) can obtain bigger saturation flux density.The miniaturization of various sensor, high performance can be realized, the most greatly
Amount is used as the material of current transformer (CT).The PB permeability alloys of especially below thickness 1mm utilizes the stacking of thin plate to send out
Wave the highest characteristic.
In addition to PC or PB, PD (Ni composition is 35～40%, and remainder is Fe), PE (Ni can be used
Composition is 45～50%, and remainder is Fe), PF (Ni composition is 54～68%, and remainder is Fe).Additionally,
The reference value of the height of relative permeability is as benchmark using about about 3000.It addition, the height of saturation flux density
Benchmark e.g. using about 0.4T as benchmark.Do not limited by these values about the reference value representing boundary line.Become
This foundation permeability alloys, silicon steel plate, ferritic order and raise.Relative permeability, material or thickness etc. are not by this
Embodiment is limited, as long as the structure that can apply with respect to above-mentioned such viewpoint of double layer screen structure both may be used.
Additionally, the saturation flux density of the 2nd magnetic shielding material is preferably difficult to produce from the saturated degree of outside magnetic flux
Value.Such as, the ferritic saturation flux density illustrated as the 2nd magnetic shielding material has the value of about 0.41T.
When making thickness fully thick in the case, available 2nd magnetic shield portion 23 carries out some degree to external magnetic field
Shielding, and the thickness of the permeability alloys PC material in composition the 1st magnetic shield portion 21 can be made thinning.
Hereinafter, the structure that expression carrys out the Magnetic Shielding Effectiveness in analysis of magnetic shielding part 20 according to Magnetic Shielding Effectiveness analytic process depends on
The result of sustainability.Magnetic force effect Ef of unlimited cylinder based on Rucker and Wills may utilize below equation and carrys out table
Show.
Ef=He/Hi=μ d/D
Here, the diameter of magnetic is set to D, the thickness of magnetic is set to d, by the relative permeability of magnetic
It is set to μ.The effect of the shielding of magnetic is Ef.Hi is the magnetic field of shielding space, when He is to there is not shielding material
Magnetic field.Relative permeability μ, magnetic thickness d proportional to Magnetic Shielding Effectiveness E, with the diameter D of magnetic
Size inversely proportional.
Fig. 3 (a), Fig. 3 (b) are to illustrate the shield effectiveness without the dual shield magnetic core in the current sensor apparatus of core type
The figure of phantom.Fig. 3 (a) is top view, and Fig. 3 (b) is axonometric chart.So-called phantom refers to, it is assumed that to figure
2 (a), Fig. 2 (b), the current sensor apparatus of Fig. 2 (c) give the model of the simple structure of external magnetic field, in order to simply,
And it is not provided with bus 15.External magnetic field is observed on when affecting of magnetic detecting element 11, because always utilizing emulation
The impact of line 15 can be ignored, so the result of emulation is appropriate.As shown in Fig. 3 (a), Fig. 3 (b), have employed imitative
True mode (here, electromagnetic software JMAG (ジ ェ イ マ グ: registered trade mark)).According to present embodiment
Current sensor apparatus 1 and the magnetic field being configured at outside it and arranging for estimating the emulation of the impact of external magnetic field
Generation unit 41 is constituted.Current sensor apparatus 1 has magnetic shield portion 20 in the outside of magnetic detecting element 11, should
Magnetic shield portion shields magnetic flux for magnetic detecting element 11, from outside.Respective size is as described below.
Magnetic filed generation unit 41:600mm × 580mm, width 100mm, thickness 200mm, the number of turn are copper 180
Circle；
Magnetic shield portion 20: highly 15mm (z-axis direction), length 22mm, width 15mm (y-axis direction),
The detailed content of the thickness in magnetic shield portion 20 is as described below.
1st magnetic shielding material in the 1st magnetic shield portion 21 (permeability alloys PB material: relative permeability μ s >=3000,
Saturation flux density 1.4T): thickness is 0.1mm, 0.2mm, 0.35mm, 0.5mm, additionally, actual effect is relative to magnetic
Conductance depends on thickness, has the tendency that the thickest relative permeability of thickness is the least.
2nd magnetic shielding material in the 2nd magnetic shield portion 23 (ferrite MB4: relative permeability μ s=2500, saturated
Magnetic flux density is 0.4T): thickness is 3,5mm, 10mm, additionally, the MB4 ferritic material name that is MnZn.
It addition, the size of magnetic detecting element (IC) 11 is as described below.
Highly 1mm, length 3mm, width 5mm, thickness 1mm,
Material is assumed to the magnetic material PC of high relative permeability 170000.
Use above-mentioned phantom, utilize magnetic shield analytic process to obtain and make from magnetic filed generation unit 41 produces
Portion's changes of magnetic field is 10000,15000,20000,30000,50000A/m time the 1st magnetic shielding material (PB) and
Magnetic flux density in 2nd magnetic shielding material (ferrite MB4) and magnetic detecting element 11.Illustrate that it is counted in Table 1
Calculate result.Additionally, when the intensity utilizing emulation to set magnetic field, be set with direct current.
[table 1]
Table 1 illustrates and makes external magnetic field change to 10000～50000A/m and make the double layer screen structure of PB Yu MB4
PB, MB4 when thickness made is changed and the value of the magnetic flux density in magnetic detecting element.Such as illustrate with
Under situation, external magnetic field be the thickness of 20000A/m, PB be that the thickness of 0.35mm, MB4 is when being 5mm
The magnetic flux density of magnetic detecting element is 0.0057T, is not affected by external magnetic field.The value of the lowermost (3 row) of table 1 is
All be as thin as the thickness of PB be the thickness of 0.1mm, MB4 be the such situation of 0.5mm, even if at 10000A/m
The external magnetic field of left and right also produces the saturated of magnetic core, even about 15000A/m, also produces the misoperation of IC.
Additionally, in the case of the magnetic flux density of magnetic detecting element uprises, such as, when reference value is set to 0.01T, becoming
In the case of more than it, it is defined as the misoperation of magnetic detecting element.The situation becoming more than 0.1T has been defined as
Full misoperation.
In Table 1, can be according to the result of calculation of emulation and simulation result, by region is applied whether oblique line is distinguished
Produce the misoperation of magnetic detecting element (IC) 11 or whether in magnetic shield portion (magnetic core), produce magnetic saturation.Can by table 1
Know, even if the structure in magnetic shield portion is identical, there is also external magnetic field the biggest easily produce magnetic detecting element 11
The situation of misoperation, the 1st magnetic shielding material, the 2nd magnetic shielding material thickness the thickest be difficult to produce Magnetic testi unit
The situation of the misoperation of part 11, particularly easily produce the saturated of magnetic core when the thickness of the 2nd magnetic shielding material is thin
Situation.
Hereinafter, the structure interdependence in the magnetic shield portion of magnetic flux density in magnetic detecting element (IC) 11 is illustrated in greater detail.
Fig. 4 be illustrate that the thickness of the 1st i.e. PB of magnetic shielding material of inner side is fixed as 0.35mm by the result according to table 1 after
The thickness of the 2nd magnetic shielding material MB4 in outside during applying external magnetic field and the magnetic flux density in magnetic detecting element 11
(T) figure of the interdependence that value is relevant.Understand as shown in Figure 4, at external magnetic field below 20000A/m, at MB4
The wide scope that thickness is 0.5mm to 10mm in, the magnetic flux density in magnetic detecting element 11 is below 0.01T,
The significant Magnetic Shielding Effectiveness produced by dual shield structure can be played.
Additionally understand, in the case of external magnetic field is 20000A/m, when the thickness of the 2nd magnetic shielding material MB4
When degree is for 0.5mm, the magnetic flux density in magnetic detecting element (IC) 11 uprises, and shield effectiveness dies down, and shows and be subject to
Impact to external magnetic field.Also knowing that, in the case of external magnetic field is 30000A/m, the thickness at MB4 is
During below 2mm, the magnetic flux density in magnetic detecting element 11 uprises, and shield effectiveness dies down, and shows by outside
The impact in magnetic field.
From above situation, when the value of external magnetic field is below 20000A/m, even if minimal thickness is the 1st magnetic
Shielding material i.e. about PB=0.35mm, it is also possible to by arranging the MB4 of such as more than thickness 1mm outside it
As the 2nd magnetic shielding material, obtain good Magnetic Shielding Effectiveness, and can significantly suppress external magnetic field to Magnetic testi
The impact of element (IC).
Fig. 5 is to illustrate the magnetic when thickness of the MB4 by the 2nd magnetic shielding material is fixed as 5mm after-applied external magnetic field
The figure of the thickness interdependence of the PB of the magnetic flux density (T) in detecting element (IC) 11.Understand as shown in Figure 5, by the
When the 2 magnetic shielding materials i.e. thickness of MB4 fixes (5mm) with the thickness of some degree, at the 1st magnetic shielding material i.e.
The thickness of PB is in the scope of 0.05mm to 0.35mm, has under external magnetic field 10000A/m, 20000A/m
There is shield effectiveness.The magnetic flux density in magnetic detecting element 11 now is roughly the same.
Although additionally, below high-intensity magnetic field 30000A/m, here for arrive about 20000A/m external magnetic field in,
Even if only the 1 of the thickness 5mm of MB4 heavily shields and also is able to obtain the shield effectiveness of some degree, but its effect
Insufficient.Compared with the situation that 1 heavily shields, when the dual shield of the thickness 5mm seeing PB0.05mm, MB4
Result time understand because magnetic flux density is low and the misoperation of IC is few, it is possible to obtain dual shield effect.
It addition, in theory, relative permeability is different according to the thickness of PB, PB thickness thin relative permeability
Uprise.That is, when shape one timing, as shown in formula (1), relative permeability and the long-pending of thickness become shielding
Effect and linear relation.According to simulation result, the shielding combination that the magnetic flux density of IC is minimum be MB4=5mm,
PB=0.05mm, next to that MB4=5mm, PB=0.2mm, followed by MB4=5mm, PB=0.1mm.
It is believed that when increasing the thickness of PB, because relative permeability reduces, so becoming such result.Also know that,
When external magnetic field is more than 30000A/m, even if under conditions of the thickness of such as PB is 0.1mm, because producing
The misoperation of IC, so not obtaining good shield effectiveness.Therefore, the situation more than 30000A/m in external magnetic field
Under, the thickness such as needing PB is more than 0.35mm.
Fig. 6 be about the thickness of PB being fixed as 0.35mm, the thickness of MB4 being fixed as 5mm and gives outside
The magnetic flux density (T) in magnetic detecting element (IC) 11 during magnetic field, portion illustrates the figure of external magnetic field interdependence.Such as Fig. 6 institute
Show, with this understanding, at least before arriving external magnetic field 20000A/m, can be described as utilizing the magnetic of present embodiment
Shielding part be configured to obtain shield effectiveness.It follows that when exceeding external magnetic field about 30000A/m, i.e.
Make to be above-mentioned magnetic shield structure, also to be affected by external magnetic field.
As seen from the above, when the value of external magnetic field arrives about 20000A/m, the 2nd magnetic shielding material is made
In the case of the thickness of i.e. MB4 reaches about 5mm, the thickness at the PB of the 1st magnetic shielding material is 0.05mm
To the thickness range of about 0.35mm, good Magnetic Shielding Effectiveness can be obtained, and the shadow of external magnetic field can be suppressed
Ring.
Then, the impact about saturation flux density illustrates.As shown in Table 1, when the 2nd magnetic shielding material
(ferrite MB4) magnetic saturation is (even if strengthening its above magnetic field, the shape that the magnetization of magnetic the most correspondingly changes
State), the 1st magnetic shielding material (PB) also magnetic saturation time, easily produce the misoperation of magnetic detecting element 11.Therefore have
The most such effect, by being set to reach the most magnetically saturated degree by the 2nd magnetic shielding material (ferrite MB4)
Fully thickness i.e. about 5mm, it is possible to the magnetic saturation of suppression magnetic shielding material.
In this case, it is preferable to use the material that relative permeability μ is high and saturation flux density Bs is high.As this
The material of sample, enumerates silicon steel plate, pure iron and permeability alloys PB material illustratively.As the 1st magnetic shielding material,
Material that saturation flux density be 0.4T more than is preferably used.Additionally, work as the relict flux density of magnetic shielding material
When being worth high, the impact of external magnetic field continues.Therefore, from the viewpoint of maintaining Magnetic Shielding Effectiveness so, the most preferably adopt
With the high material such as silicon steel plate of relict flux density.
(the 2nd embodiment)
Then, the 2nd embodiment of the present utility model is described.Fig. 7 (a) is the current sensor illustrating present embodiment
The sectional view of one structure example of device.Fig. 7 (b) is the sectional view of the current sensor apparatus of the variation illustrating Fig. 7 (a).
It is to be constituted tool by the composite of the nonmagnetic substances such as magnetic material and resin material with the difference of the 1st embodiment
There is the 2nd magnetic shield portion 23a of the 2nd relative permeability.Although the action effect relevant to the magnetic shield that this structure produces
Identical with the 1st embodiment, but there is advantage as follows, by using the non-magnetic such as magnetic material and resin material
The cheap composite of property material, can improve the reduction effect of cost compared with the situation of the 1st embodiment.Such as figure
Shown in 7 (b), the 2nd magnetic shield portion 23a can be set in inner side.As such composite, such as, can use ferrum oxygen
Body and the composite of epoxy resin.As discussed above, according to the current sensor apparatus of present embodiment,
Have and the impact of external magnetic field can either be suppressed can to reduce again the such advantage of cost further.
(the 3rd embodiment)
Then, the 3rd embodiment of the present utility model is described.Fig. 8 (a) is the current sensor illustrating present embodiment
The sectional view of one structure example of device.In the current sensor apparatus 1 of present embodiment, at magnetic detecting element 11
Side i.e. with sense magnetic surface 11a substantially relative to position on configure the 1st magnetic shield portion 21a, with sense magnetic surface 11a
The 2nd magnetic shield portion 23c is configured on substantially vertical position.I.e., in series configuration the 1st magnetic shield portion 21a and the 2nd
Magnetic shield portion 23c.But in the case, because the path of magnetic flux is series connection, it is advantageous to the 1st magnetic shield portion 21a
It is respectively provided with higher value with the saturation flux density of the 2nd magnetic shield portion 23c.It addition, the 2nd magnetic shield portion 23c because of
Sectional area S for flow direction2Little, so being easily saturated.It is therefore preferable that the saturated magnetic of the 2nd magnetic shield portion 23c
Flux density is the highest.In the case, it is possible to utilize the formula as above-mentioned formula (1) to obtain shield effectiveness.This
In, μ is respective relative permeability, and d is the thickness of magnetic shielding material, and S is the face relative with magnetic detecting element
Sectional area.As long as additionally, the thickness of the 1st magnetic shield portion 21a of Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) and Fig. 2 (a),
Fig. 2 (b), the thickness in the 1st magnetic shield portion 21 of Fig. 2 (c) are that same degree both may be used.Can be by arranging Fig. 8 (a), figure
The 2nd magnetic shield portion 23c of 8 (c) makes up the 1st magnetic shield portion for only arranging Fig. 8 (a), Fig. 8 (b), Fig. 8 (c)
21a and the impact of Magnetic Shielding Effectiveness that produces.
As described above, according to present embodiment, although making sectional area little but part i.e. the 2nd of bottom surface side the of magnetic circuit length
Magnetic shield portion 23c utilizes the material of low relative permeability and high saturation magnetic flux density to be formed, and thus can either reduce into
This, can suppress again the impact of external magnetic field.Although also according to thickness, but the 1st magnetic shield portion 21a can use relatively
Material more than pcrmeability more than 3000, saturation flux density 1.4T, the 2nd magnetic shield portion 23c can use relative magnetic
Material more than conductance more than 100, saturation flux density 1.2T.It addition, as shown in Fig. 8 (b), available magnetic
The composite of the nonmagnetic substances such as material and resin material is formed at the 2nd magnetic shield portion 23d that bottom surface side is arranged.
Such as, the material etc. making resin with ferrite hybrid shaping can be used.Additionally, as shown in Fig. 8 (c), can be in two sides
Side and bottom surface side arrange the 1st magnetic shield portion 21a, and also arrange the 2nd magnetic shield portion 23c at bottom surface side.It addition,
The bonding station of the 1st magnetic shield portion 21a and the 2nd magnetic shield portion 23c is not limited to Fig. 8 (a).It addition, the replaceable 1st
Magnetic shield portion 21a and the configuration of the 2nd magnetic shield portion 23c.When Fig. 8 (a), Fig. 8 (b), low phase is to magnetoconductivity material
The preferably thickness of 10～20 times of high relative permeability material.
(the 4th embodiment)
Then, the 4th embodiment of the present utility model is described.Fig. 9 (a), Fig. 9 (b) are the electricity illustrating present embodiment
The axonometric chart of one structure example of flow sensor arrangement.In the structure shown in Fig. 9 (a), Fig. 9 (b), upper in z direction
Side is not to have tubular formation the 1st magnetic shield portion 51,51a and the 2nd magnetic shield portion 53, the 53a of opening.Even if at this
In a little structures, it is also possible to obtain the effect of dual shield structure.It addition, according to such structure, because not having up
Opening is set, so having the simplest such advantage of manufacturing process that can make magnetic shield portion.But, with encirclement
Surrounding is compared, and the Magnetic Shielding Effectiveness of the mode of U-shaped opened above is more preferable.Its reason is because, when magnetic shield material
When material has the upper wall surrounding surrounding together with sidewall, bottom surface, the magnetic detecting element being arranged in bus becomes and upper wall
Magnetic shielding material close proximity, the magnetic field easily producing upper wall and magnetic detecting element is interfered.It addition, opening is preferred
It is positioned at the top of magnetic detecting element, it addition, the side that opening is the biggest.Its reason is because being difficult to produce magnetic shield material
The upper wall portion of material and the interference of magnetic detecting element.Opening is alternatively the form without upper wall surrounding surrounding.It addition, it is right
The shape of opening is not particularly limited.
Above-mentioned each embodiment does not limit the shape etc. in magnetic shield portion, is only used as one and exemplifies.Can be triangle,
The shape such as polygon, ellipse.It addition, barricade is not limited to straight line, such as, can be the arcuation prominent in IC side.
According to above-mentioned each embodiment, in current sensor apparatus, the electric current inspection caused by external magnetic field can either be avoided
The misoperation surveyed, can cut down again cost.
Additionally, as the material of high relative permeability, enumerate following material illustratively.Can use permeability alloys,
Alsifer, Co base non-crystalline material, pure iron, Fe-6.5Si, Fe-3.5Si, Fe base non-crystalline material, nanometer
Crystallization Fe based soft magnetic material, silicon steel plate etc..It addition, as the material of low relative permeability, enumerate illustratively
Following material.The material etc. that can use mixed ferrite in Mn-Zn ferrite, resin and shape.It addition,
1st magnetic shield portion 21 can also use the composite of Magnaglo and resin.
As the Magnaglo for the 1st magnetic shield portion can use Fe-6.5Si, pure iron, Fe-Si, Fe-Ni, Fe-Al,
The soft magnetic powder of the Fe base alloy powders such as Fe-Co, Fe-Cr, Fe-N, Fe-C, Fe-B, Fe-P, Fe-Al-Si or
Person's rare earth metal powder, amorphous metal powder etc..The averaged particles footpath of these powder can become 100 μm extremely
300μm。
As the resin for the 1st and the 2nd magnetic shield portion, heat-curing resin, ultra-violet solidified tree can be used
Fat or thermoplastic resin.As heat-curing resin, can use phenolic resin, epoxy resin, unsaturated polyester resin,
Polyurethane, diallyl phthalate resin, silicone resin etc..As uv curing resin, can use poly-
Urethane acrylate series, epoxy acrylate series, series of acrylate, the resin of epoxy series.As thermoplastic
Property resin, can use the resin that the heat resistance such as polyimides or fluororesin is good.Also may be used in 2nd magnetic shield portion 23
To use these resins.Such as, in Magnaglo add resin ratio relative to Magnaglo can become 5～
7wt%.Furthermore it is also possible to utilize 1 resin to make two magnetic shielding material solidifications of tabular become double-layer structural.
It addition, have the situation producing residual magnetic field due to external magnetic field in shielding magnetic core.Therefore, screen is being selected
During the material covered, it is preferably selected the material that the magnetic hysteresis i.e. residual magnetic field of few material is little.It addition, the sense magnetic of magnetic detecting element
Face and magnetic shielding material are not necessarily completely parallel.Even if the angle of the degree that band is between sense magnetic surface and magnetic shielding material
Spend the angle of such as 0～10 degree, it may have shield effectiveness.
1st and the 2nd magnetic shield portion with U-shaped can be the magnetic cup making a piece of plate benging be U-shaped
Cover material.It addition, multiple magnetic shielding materials be can be combined become U-shaped.In the above-described embodiment, about
On accompanying drawing, the structure etc. of diagram is not limited only to this, can suitably change in the range of this utility model effect playing.
It addition, without departing from the scope of the purpose of this utility model, it becomes possible to suitably implement after change.It addition, this
Each element of utility model can at random carry out accepting or rejecting selection, possesses the technical scheme of the structure accepting or rejecting selection also
It is contained in this utility model.
Industrial utilizability
This utility model may use current sensor apparatus.
Claims (13)
1. a current sensor apparatus, is the current sensor apparatus without core type, it is characterised in that possess:
Magnetic detecting element, magnetic flux produced by its detection current path；And
Magnetic shield portion, it is arranged at around described magnetic detecting element, shield for described magnetic detecting element, from
Outside magnetic flux,
Described magnetic shield portion possesses: the 1st magnetic shield being made up of the 1st magnetic shielding material with the 1st relative permeability
Portion；And be made up of the 2nd magnetic shielding material with the 2nd relative permeability different from described 1st relative permeability
The 2nd magnetic shield portion.
Current sensor apparatus the most according to claim 1, it is characterised in that
Described 2nd relative permeability is less than described 1st relative permeability, configures in the outside in described 1st magnetic shield portion
Described 2nd magnetic shield portion.
Current sensor apparatus the most according to claim 2, it is characterised in that
Described 1st magnetic shield portion and described 2nd magnetic shield portion the most u-shaped shape respectively,
Recess in the described 2nd magnetic shield portion of the most u-shaped shape connects described in the most u-shaped shape of setting
1st magnetic shield portion.
Current sensor apparatus the most according to claim 1, it is characterised in that
Described 2nd relative permeability is less than described 1st relative permeability, by described 2nd magnetic shield portion and the described 1st
Magnetic shield portion is connected in series.
Current sensor apparatus the most according to claim 4, it is characterised in that
Described 1st magnetic shield portion is the most relative with the sense magnetic surface of described magnetic detecting element, described 2nd magnetic shield portion and institute
State sense magnetic surface substantially vertical.
Current sensor apparatus the most according to claim 5, it is characterised in that
There are two described 1st magnetic shield portions and engage two described 1st magnetic shield portions at least 1 the described 2nd
Magnetic shield portion,
To the magnetic flux of a described 1st magnetic shield portion input by described 2nd magnetic shield portion, and by described in another
Behind 1st magnetic shield portion, output is to outside.
Current sensor apparatus the most as claimed in any of claims 1 to 6, it is characterised in that
Described magnetic shield portion have with described magnetic detecting element sense magnetic surface generally perpendicular direction on arrange opening.
Current sensor apparatus the most according to claim 7, it is characterised in that
Described current path is configured in the opposition side of the described opening of described magnetic detecting element.
Current sensor apparatus the most as claimed in any of claims 1 to 6, it is characterised in that
Described 1st relative permeability is more than 3000.
Current sensor apparatus the most as claimed in any of claims 1 to 6, it is characterised in that
Described 2nd relative permeability is less than more than 100 2500.
11. current sensor apparatus as claimed in any of claims 1 to 6, it is characterised in that
Described 1st magnetic shielding material is Fe-Ni alloy/C, and described 2nd magnetic shielding material is ferrite.
12. current sensor apparatus as claimed in any of claims 1 to 6, it is characterised in that
Described 2nd magnetic shielding material is formed by the material comprising magnetic material and resin material.
13. current sensor apparatus as claimed in any of claims 1 to 6, it is characterised in that
The thickness in described 1st magnetic shield portion is 0.05mm～0.35mm, and the thickness in described 2nd magnetic shield portion is
3mm～10mm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2015045000A JP6190835B2 (en) | 2015-03-06 | 2015-03-06 | Current sensor device |
| JP2015-045000 | 2015-03-06 |
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| CN201620167949.5U Active CN205608062U (en) | 2015-03-06 | 2016-03-04 | Current sensor device |
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| DE112017006380T5 (en) * | 2017-01-17 | 2019-09-05 | Hitachi Automotive Systems, Ltd. | Power conversion device |
| WO2019070583A1 (en) * | 2017-10-02 | 2019-04-11 | ABB Schweiz AB | Flux absorber for power line device |
| JP6973021B2 (en) * | 2017-12-18 | 2021-11-24 | 日立金属株式会社 | Current sensor |
| EP3508863B1 (en) * | 2018-01-05 | 2023-06-07 | Melexis Technologies SA | Offset current sensor structure |
| US11609248B2 (en) * | 2018-07-11 | 2023-03-21 | Lem International Sa | Current transducer with integrated primary conductor |
| JP7215451B2 (en) * | 2020-03-19 | 2023-01-31 | Tdk株式会社 | CURRENT SENSOR AND MANUFACTURING METHOD THEREOF, ELECTRICAL CONTROL DEVICE, AND CURRENT SENSOR DESIGN METHOD |
| JP7367224B2 (en) | 2020-07-28 | 2023-10-23 | アルプスアルパイン株式会社 | current sensor |
| CN116745628A (en) | 2021-01-19 | 2023-09-12 | 阿尔卑斯阿尔派株式会社 | Current detection device |
| WO2024095585A1 (en) * | 2022-11-02 | 2024-05-10 | アルプスアルパイン株式会社 | Current sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5013505U (en) * | 1973-06-01 | 1975-02-13 | ||
| JPS58193469A (en) * | 1981-12-15 | 1983-11-11 | ラ・テレメカニク・エレクトリク | Measuring device for current flowing through conductor |
| JPS61284999A (en) * | 1985-06-10 | 1986-12-15 | 株式会社神戸製鋼所 | Magnetostatic field shielding material |
| JP2970297B2 (en) * | 1993-02-26 | 1999-11-02 | 三菱マテリアル株式会社 | High resistance magnetic shield material |
| JP4385883B2 (en) * | 2004-07-27 | 2009-12-16 | トヨタ自動車株式会社 | Semiconductor module |
| US8193803B2 (en) * | 2009-03-23 | 2012-06-05 | Consolidated Edison Company Of New York, Inc. | Current measuring device |
| US20140049255A1 (en) * | 2011-05-20 | 2014-02-20 | Honda Motor Co., Ltd. | Coreless current sensor structure, coreless current sensor, and current detection method |
| JP5482736B2 (en) * | 2011-06-28 | 2014-05-07 | 株式会社デンソー | Current sensor |
| JP2014066589A (en) * | 2012-09-25 | 2014-04-17 | Stanley Electric Co Ltd | Current detection device |
| JP6127499B2 (en) * | 2012-12-20 | 2017-05-17 | アイシン精機株式会社 | Current sensor |
| CN103575960B (en) * | 2013-10-29 | 2016-03-02 | 河北工业大学 | giant magnetoresistance effect current sensor |
| CN205139229U (en) * | 2015-11-25 | 2016-04-06 | 天津航空机电有限公司 | Huge magnetoresistive effect current sensor |
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| JP2016164523A (en) | 2016-09-08 |
| JP6190835B2 (en) | 2017-08-30 |
| CN105938154A (en) | 2016-09-14 |
| CN105938154B (en) | 2020-02-07 |
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