CN105938154A - Electric current sensor - Google Patents
Electric current sensor Download PDFInfo
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- CN105938154A CN105938154A CN201610124468.0A CN201610124468A CN105938154A CN 105938154 A CN105938154 A CN 105938154A CN 201610124468 A CN201610124468 A CN 201610124468A CN 105938154 A CN105938154 A CN 105938154A
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- shield portion
- current sensor
- magnetic shield
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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- General Physics & Mathematics (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention provides a current sensor device capable of avoiding error action of current detection caused by an external magnetic field and cutting cost. The current sensor device is magnetic core-free and is provided with a magnetic detection element detecting magnetic flux generated in a current path; and a magnetic shielding part arranged around the magnetic detecting element and shielding magnetic flux for the magnetic detection element and from the external. The magnetic shielding part is provided with a first magnetic shielding part made of a first magnetic shielding material having a first relative magnetic conducting rate and a second magnetic part made of the a second magnetic shielding material having a second magnetic conducting rate different from the first magnetic conducting rate.
Description
Technical field
The present invention relates to current sensor apparatus, particularly relate to use the current sensor without core type of magnetic detecting element
Device.
Background technology
Current sensor apparatus is generally used for measuring the electric current of the battery feed etc. of automobile.As at current path
(hereinafter referred to as " bus " (bus bar).) etc. in electric lines of force (power line) electric current of flowing carry out the current detecting detected
Device, it is known to current sensing means as follows, utilize be arranged to circumferentially surround the collection magnetic magnetic core of bus, according to
The electric current of flowing in bus, makes to carry out collecting magnetic at the magnetic flux produced about, and by being examined by magnetic detecting elements such as Hall elements
Survey the magnetic flux of collected magnetic, detect electric current.
On the other hand, it is also proposed that do not use collection magnetic magnetic core but detect in the bus in the way of directly detection magnetic flux
The current sensor apparatus without core type of the electric current of flowing.According to such current sensor apparatus without core type, it is possible to
Cut down components number, therefore, it is possible to miniaturization of the apparatus, it addition, because typically need not the collection magnetic being made up of the electromagnetic steel of high price
Magnetic core, it is possible to make device cost degradation.
But, even if merely the current sensor apparatus without core type not using collection magnetic magnetic core to be used for the electricity of bus
Stream detection, also can capture the magnetic flux produced from other bus (such as, the bus of other adjacent phase) etc. and be affected by, because of
This can not be correctly detected electric current.
Patent document 1 discloses that the current sensor apparatus possessing magnetic shielding material, this magnetic shielding material is for from outside
Magnetic shield detects the power semiconductor of electric current by detection magnetic flux.According to this current sensor apparatus, because possessing
The magnetic shielding material arranged round power semiconductor, so reducing the impact made an uproar from outside magnetic.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2006-38640 publication
Summary of the invention
Invent problem to be solved
Fig. 1 is the schematic cross sectional views of the current sensor apparatus of the existing magnetic shield structure possessing monolayer.Such as Fig. 1 institute
Showing, current sensor apparatus 1 possesses the magnetic detecting element such as such as Hall element arranged in the bus 15 as detection object
(IC)11.Additionally, in the outside of magnetic detecting element 11, also have magnetic shield portion 21, this magnetic shield portion 21 shields for Magnetic testi
Element 11, from outside magnetic flux.Magnetic shield portion 21 is made up of the material with high relative permeability μ.
Therefore, even if current sensor apparatus 1 applies external magnetic field, magnetic flux 31 also is able to by relative permeability μ high
Magnetic shield portion 21 senses, and reduces the external magnetic field impact on magnetic detecting element 11.In the magnetic shield with the monolayer shown in Fig. 1
In the structure in portion, as the magnetic shielding material in composition magnetic shield portion 21, use permeability alloys contour relative permeability material.But
It is that the magnetic shielding material being made up of high relative permeability material is because of ratio higher price, so having current sensor apparatus
Cost uprise such problem.It addition, utilizing relative permeability to be less than the pure iron of permeability alloys or silicon steel plate carries out magnetic cup
In the case of covering, need that the thickness making magnetic shielding material is thickening carries out magnetic shield, thus have the most thickening cause large-scale
Change, be difficult to manufacture and the such problem of high price.It is an object of the invention to provide the electric current that can either avoid being caused by external magnetic field
The misoperation of detection can cut down again the current sensor apparatus of cost.Other purpose is, makes magnetic shielding material thinning, makes electric current
Sensor device miniaturization.
The means of solution problem
A viewpoint according to the present invention, it is possible to provide following such current sensor apparatus, this current sensor apparatus
Being the current sensor apparatus without core type, feature is to possess: magnetic detecting element, magnetic flux produced by its detection current path；
And magnetic shield portion, it is arranged at around above-mentioned magnetic detecting element, shield for above-mentioned magnetic detecting element, from outside
Magnetic flux (external magnetic field), above-mentioned magnetic shield portion possesses: the 1st magnetic being made up of the 1st magnetic shielding material with the 1st relative permeability
Shielding part；And be made up of the 2nd magnetic shielding material with the 2nd relative permeability different from above-mentioned 1st relative permeability
2nd magnetic shield portion.
Be there is by setting the 1st magnetic shield portion and the 2nd magnetic shield portion of different relative permeabilities, good magnetic can be obtained
Shield effectiveness.
The most above-mentioned 2nd relative permeability is less than above-mentioned 1st relative permeability, joins in the outside in above-mentioned 1st magnetic shield portion
Put above-mentioned 2nd magnetic shield portion.
The most above-mentioned 1st magnetic shield portion and above-mentioned 2nd magnetic shield portion the most u-shaped shape respectively, at the most u-shaped shape
Above-mentioned 2nd magnetic shield portion recess connect arrange the most u-shaped shape above-mentioned 1st magnetic shield portion.
Above-mentioned 2nd relative permeability can be less than above-mentioned 1st relative permeability, by above-mentioned 2nd magnetic shield portion and above-mentioned 1st magnetic
Shielding part is connected in series.
Now, above-mentioned 1st magnetic shield portion can be the most relative with the sense magnetic surface of above-mentioned magnetic detecting element, above-mentioned 2nd magnetic shield
Portion is substantially vertical with above-mentioned sense magnetic surface.
Here, it is preferred that there are two above-mentioned 1st magnetic shield portions and engage at least 1 of two above-mentioned 1st magnetic shield portions
State the 2nd magnetic shield portion, to the magnetic flux of an above-mentioned 1st magnetic shield portion input by above-mentioned 2nd magnetic shield portion, and by another
Behind above-mentioned 1st magnetic shield portion, output is to outside.
It addition, the parameter for obtaining desired Magnetic Shielding Effectiveness can be determined according to below equation.
E(total)=E1×E2={ (μ1×d1)/S1}×{(μ2×d2)/S2}
The most above-mentioned magnetic shield portion have with above-mentioned magnetic detecting element sense magnetic surface generally perpendicular direction on arrange
Opening.
Above-mentioned current path can be configured in the opposition side of the above-mentioned opening of above-mentioned magnetic detecting element.
The most above-mentioned 1st relative permeability becomes more than 3000.
The most above-mentioned 2nd relative permeability becomes less than more than 100 2500.
Above-mentioned 1st magnetic shielding material can be Fe-Ni alloy/C, and above-mentioned 2nd magnetic shielding material becomes ferrite.
Above-mentioned 2nd magnetic shielding material can be formed by the material comprising magnetic material and resin material.
The thickness d in above-mentioned 1st magnetic shield portion1Can be 0.05mm～0.35mm, the thickness d in above-mentioned 2nd magnetic shield portion2Become
For 3mm～10mm.
Invention effect
According to the present invention, in current sensor apparatus, the mistake of the current detecting caused by external magnetic field can either be suppressed
Action, can cut down again manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the section view of a structure example of the existing current sensor apparatus of the magnetic shield structure illustrating and having monolayer
Figure.
Fig. 2 (a) is the current sensor apparatus of double-deck magnetic shield structure of the 1st embodiment illustrating and having the present invention
The sectional view of a structure example.Fig. 2 (b) is its axonometric chart.Fig. 2 (c) is the sectional view illustrating the structure example different from Fig. 2 (a).
Fig. 3 (a), Fig. 3 (b) are to illustrate for estimating without the dual shield magnetic core in the current sensor apparatus of core type
The figure of the phantom of shield effectiveness.
Fig. 4 is the MB4 illustrating the magnetic flux density (T) in the magnetic detecting element (IC) when the thickness of PB is fixed as 0.35mm
The figure of thickness interdependence.
Fig. 5 is the PB illustrating the magnetic flux density (T) in the magnetic detecting element (IC) when the thickness of MB4 is fixed as 5mm
The figure of thickness interdependence.
Fig. 6 be illustrate the thickness of PB is fixed as 0.35mm, the magnetic detecting element time thickness of MB4 is fixed as 5mm
(IC) figure of the external magnetic field interdependence of the magnetic flux density (T) in.
Fig. 7 (a), Fig. 7 (b) are the sectional views of the current sensor apparatus of the 2nd embodiment of the present invention.
Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) are the sectional views of the current sensor apparatus of the 3rd embodiment of the present invention.
Fig. 9 (a), Fig. 9 (b) are the axonometric charts of the current sensor apparatus of the 4th embodiment of the present invention.
Label declaration
1 ... current sensor apparatus, 11 ... magnetic detecting element (IC), 11a ... sense magnetic surface, 15 ... current path (bus),
20 ... magnetic shield portion, 21 ... the 1st magnetic shield portion, 23 ... the 2nd magnetic shield portion
Detailed description of the invention
Hereinafter, referring to the drawings, the current sensor apparatus of embodiments of the present invention is described in detail.
(the 1st embodiment)
Fig. 2 (a) is the sectional view of a structure example of the current sensor apparatus of the 1st embodiment of the output present invention.Fig. 2
B () is the axonometric chart of the current sensor apparatus shown in Fig. 2 (a).Hereinafter, say with reference to the x, y, z axle defined in the various figures
Bright.
As shown in Fig. 2 (a), Fig. 2 (b), the current sensor apparatus 1 of present embodiment possesses such as Hall element equimagnetic inspection
Surveying element (being later also referred to as IC) 11, this magnetic detecting element is arranged on electric current road as detection object, with the extension of y-axis direction
In footpath i.e. bus 15.As magnetic detecting element 11, such as, can use Hall element, magnetoresistive element, combination Hall element and put
Any one in the Hall IC (IC:Integrated Circuit: integrated circuit) of big device circuit etc..As magneto-resistor unit
Part, can use aeolotropic magnetoresistive element AMR, huge magnetoresistive element GMR, tunnel magneto resistance element TMR etc..
Additionally, current sensor apparatus 1 has magnetic shield portion 20, this magnetic shield portion 20 has the magnetic inspection of sense magnetic surface 11a
Survey element 11 around, shield magnetic flux (external magnetic field) for magnetic detecting element 11, from outside.Magnetic shield portion 20 by
The side of sidewall portion that the side, two sides in the x-axis direction of magnetic detecting element 11 is arranged and the wall portion that the bottom surface side in z-axis direction is arranged are formed.
Such as, in side, two sides, be fixed on magnetic shield portion 20, on not shown substrate, magnetic detecting element 11 can be installed.Will be
In magnetic detecting element 11, the electric current of flowing is set to I1.In this instance, magnetic shield portion 20 has and executes than the voltage of magnetic detecting element 11
Add direction (between two-terminal) the i.e. width W in y-axis direction2Big width W1.For miniaturization/cost degradation, preferably X-direction
Width L is the shortest.
In the present embodiment, magnetic shield portion 20 has the magnetic shield structure of bilayer, and the magnetic shield structure of this bilayer possesses:
By having the 1st relative permeability μ1The 1st shielding material constitute and thickness be d1The 1st magnetic shield portion 21；And have and the 1st
Relative permeability μ1The 2nd different relative permeability μ 2 and thickness are d2The 2nd magnetic shield portion 23.In this construction, hang down with magnetic flux
The area of straight shielding part is S1=S2.In Fig. 2 (a), Fig. 2 (b), Fig. 2 (c), although make the inner side of magnetic shielding material become and cut
Area S1、S2, but at d1、d2In the case of thin, even if using the sectional area in outside of magnetic shielding material also to be able to obtain same
Effect.Here, the 2nd relative permeability μ can be made2Less than the 1st relative permeability μ1, and the 2nd magnetic shield portion 23 is arranged in the 1st magnetic
The outside of shielding part 21.Additionally, available binding agent bonds the 1st magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd, available resin
Apply (coating) two magnetic shield portion 21,23 to be integrally forming.
According to above-mentioned structure, as shown in Fig. 2 (a), will apply based on the side from the x-axis direction of magnetic detecting element 11
A part of 31b of magnetic flux 31 of external magnetic field be directed into the 2nd magnetic shield portion 23 with the 2nd relative permeability μ 2, also by magnetic
Logical 31a is directed into has the 1st relative permeability μ1The 1st magnetic shield portion 21, it is possible to suppression external magnetic field to Magnetic testi unit
The impact of part 11.About from outside magnetic flux 31, enter into the 2nd magnetic shield portion 23 that magnetoconductivity material formed by low phase
Magnetic flux flows to bottom on a small quantity, and substantial amounts of magnetic flux is by the 1st magnetic shield portion 21 as high relative permeability material.To magnetic shield portion
The magnetic flux of input and the magnetic flux exported are approximately uniform values.
Here, Magnetic Shielding Effectiveness during double-layer structural can be shown as below equation.That is, shielding material is entered into
The magnetic flux of inner side is decayed according to below equation.
E(total)=E1×E2={ (μ1×d1)/S1}×{(μ2×d2)/S2Formula (1)
Here, total Magnetic Shielding Effectiveness E is to make Magnetic Shielding Effectiveness E based on the 1st magnetic shield portion1With based on the 2nd magnetic shield
Magnetic Shielding Effectiveness E in portion2The value of the Magnetic Shielding Effectiveness of combination.It addition, μ is respective relative permeability, d is to hang down with external magnetic field
Each thickness in straight direction, S be the area of the magnetic shielding material in the direction vertical with external magnetic field (be generally S1=
S2).E is become in the case of the magnetic shield portion of monolayer(total)=E1, work as E2From formula (1) when being more than 1, double-deck magnetic
Shielding part can obtain good effect.Even if the 2nd relative permeability μ2Step-down, as long as making d2Thickening, it becomes possible to make E2Become 1 with
On.Additionally, total Magnetic Shielding Effectiveness E becomes the product of each shield effectiveness of double-layer structural, can prove that the most in theory with
The only situation of monolayer is compared, by using dual magnetic shielding structure and making E2Become more than 1, i.e. by increasing μ2×d2, can obtain
Significantly shield effectiveness.
Additionally, the 2nd magnetic shielding material constituting the low relative permeability in the 2nd magnetic shield portion 23 is general and constitutes the 1st magnetic cup
1st magnetic shielding material of the high relative permeability covering the high price in portion 21 is compared, it is possible to reduce cost, therefore, it is possible to work is greatly reduced
Fee of material for magnetic shield portion 20 entirety.I.e., it is possible to make the lower thickness of the 1st magnetic shielding material of high cost (reduce and use
Amount), it is possible to reduce cost.
Additionally, as shown in Fig. 2 (c), the 2nd magnetic shield portion 23 can be arranged in the inner side in the 1st magnetic shield portion 21.But it is because
Even if the thickness that outside is identical in such shape also results in volume becomes big, so going out from cutting down the such viewpoint of cost
Send out, the more preferably structure shown in Fig. 2 (a).1st magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd such as can be by respective parts
Assembling procedure realizes.
As discussed above, according to the current sensor apparatus of present embodiment, have and can either suppress outside
The impact in magnetic field can reduce again the such advantage of cost.Additionally, in above-mentioned example, although by having different relative magnetic
Double-deck magnetic shielding material of conductance forms magnetic shield portion but it also may is made up of the magnetic shielding material of more than 3 layers, or can become
For the structure making relative permeability be changed in a thickness direction.Furthermore it is possible to connect up the 1st in x-axis direction, z-axis side
Magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd, or the 1st magnetic shield portion 23 of magnetic shield portion the 21 and the 2nd can be configured dividually.
(embodiment 1)
In Fig. 2 (a), can make that there is the 1st relative permeability μ1The 1st magnetic shielding material such as become permeability alloys PC material
Material, makes have the 2nd relative permeability μ2The 2nd magnetic shielding material for example, ferrite (ferrite).Permeability alloys PC material
Relative permeability is more than 5000, and ferritic relative permeability is about 2000.The former price is high by contrast.Permeability alloys PC
The relative permeability of material thickness 0.1mm is several ten thousand～hundreds of thousands, and the relative permeability of permeability alloys PB material thickness 0.1mm is
10000～20,000,0.35mm is approximately 3000.Therefore, the thickness making permeability alloys is the thinnest, by arranging low-cost ferrum
Oxysome makes up the Magnetic Shielding Effectiveness of corresponding minimizing.Such as, as long as the thickness of the 1st magnetic shielding material can utilize the 1st magnetic cup
Cover portion 21 absorb from the such degree of magnetic flux not absorbed by the 2nd magnetic shield portion 23 in outside magnetic flux thickness both
Can.
Additionally, permeability alloys (Permalloy) is alloy (alloy) such meaning of magnetic conductivity (permeable), lead
Magnetic alloy, compared with electromagnetic soft iron, has the character of magnetic conductivity the highest (easily by magnetic force).Permeability alloys utilizes nickel to contain
Amount is classified, and it possesses various feature.About PC permeability alloys (Ni-Mo, Cu-Fe), nickel composition is 70～85%, relative magnetic permeability
Rate and DC characteristic are good.Processability is the highest, is suitable as magnetic shielding material.PB permeability alloys (Ni-Fe) can obtain bigger
Saturation flux density.The miniaturization of various sensor, high performance can be realized, be used as the material of current transformer (CT) the most in a large number.Especially
The PB permeability alloys of its below thickness 1mm utilizes the stacking of thin plate to play the highest characteristic.
In addition to PC or PB, PD (Ni composition is 35～40%, and remainder is Fe) can be used, (Ni composition is 45 to PE
～50%, remainder is Fe), PF (Ni composition is 54～68%, and remainder is Fe).Additionally, the height of relative permeability
Reference value be as benchmark using about about 3000.It addition, the benchmark of the height of saturation flux density is e.g. by about 0.4T
As benchmark.Do not limited by these values about the reference value representing boundary line.Cost is according to permeability alloys, silicon steel plate, ferrite
Order and raise.Relative permeability, material or thickness etc. are not limited by this embodiment, as long as bilayer can be applied with respect to
The structure of above-mentioned such viewpoint of shielding structure both may be used.
Additionally, the saturation flux density of the 2nd magnetic shielding material is preferably difficult to produce from the saturated degree of outside magnetic flux
Value.Such as, the ferritic saturation flux density illustrated as the 2nd magnetic shielding material has the value of about 0.41T.When at this
In the case of when making thickness fully thick, available 2nd magnetic shield portion 23 carries out the shielding of some degree, and can make external magnetic field
The thickness of the permeability alloys PC material constituting the 1st magnetic shield portion 21 is thinning.
Hereinafter, represent that to carry out the structure of Magnetic Shielding Effectiveness in analysis of magnetic shielding part 20 according to Magnetic Shielding Effectiveness analytic process interdependent
The result of property.Magnetic force effect Ef of unlimited cylinder based on Rucker and Wills may utilize below equation and represents.
Ef=He/Hi=μ d/D
Here, the diameter of magnetic is set to D, the thickness of magnetic is set to d, the relative permeability of magnetic is set to
μ.The effect of the shielding of magnetic is Ef.Hi is the magnetic field of shielding space, magnetic field when He is to there is not shielding material.Magnetic relatively
Conductance μ, magnetic thickness d proportional to Magnetic Shielding Effectiveness E, inversely proportional with the size of the diameter D of magnetic.
Fig. 3 (a), Fig. 3 (b) are to illustrate the shield effectiveness without the dual shield magnetic core in the current sensor apparatus of core type
The figure of phantom.Fig. 3 (a) is top view, and Fig. 3 (b) is axonometric chart.So-called phantom refers to, it is assumed that to Fig. 2 (a), figure
The current sensor apparatus of 2 (b), Fig. 2 (c) gives the model of the simple structure of external magnetic field, in order to simply, and is not provided with total
Line 15.Utilizing emulation to observe external magnetic field to when affecting of magnetic detecting element 11, because the impact of bus 15 can be ignored, institute
It is appropriate with the result of emulation.As shown in Fig. 3 (a), Fig. 3 (b), have employed phantom (here, electromagnetic software
JMAG (ジ ェ イ マ グ: registered trade mark)).Current sensor apparatus according to present embodiment 1 and be configured at outside it and use
Constitute in the magnetic filed generation unit 41 estimating the emulation of impact of external magnetic field and arrange.Current sensor apparatus 1 is at Magnetic testi
The outside of element 11 has magnetic shield portion 20, and this magnetic shield portion shields magnetic flux for magnetic detecting element 11, from outside.Respectively
From size as described below.
Magnetic filed generation unit 41:600mm × 580mm, width 100mm, thickness 200mm, the number of turn are copper 180 circles；
Magnetic shield portion 20: highly 15mm (z-axis direction), length 22mm, width 15mm (y-axis direction),
The detailed content of the thickness in magnetic shield portion 20 is as described below.
1st magnetic shielding material (the permeability alloys PB material: relative permeability μ s >=3000, saturated magnetic in the 1st magnetic shield portion 21
Flux density 1.4T): thickness is 0.1mm, 0.2mm, 0.35mm, 0.5mm, additionally, actual effect relative permeability depends on thickness, has
The tendency that the thickest relative permeability of thickness is the least.
2nd magnetic shielding material (the ferrite MB4: relative permeability μ s=2500, saturation flux are close in the 2nd magnetic shield portion 23
Degree is 0.4T): thickness is 3,5mm, 10mm, additionally, the MB4 ferritic material name that is MnZn.
It addition, the size of magnetic detecting element (IC) 11 is as described below.
Highly 1mm, length 3mm, width 5mm, thickness 1mm,
Material is assumed to the magnetic material PC of high relative permeability 170000.
Use above-mentioned phantom, utilize magnetic shield analytic process to obtain the outside making to produce from magnetic filed generation unit 41
Changes of magnetic field is 10000,15000,20000,30000,50000A/m time the 1st magnetic shielding material (PB) and the 2nd magnetic shield material
Magnetic flux density in material (ferrite MB4) and magnetic detecting element 11.Its result of calculation is shown in Table 1.Additionally, it is imitative utilizing
When really setting the intensity in magnetic field, it is set with direct current.
[table 1]
: unshakable in one's determination saturated
: IC misoperation
: the complete misoperation of IC
Table 1 illustrates in making external magnetic field change to 10000～50000A/m and make the double layer screen of PB Yu MB4 construct
PB, MB4 when thickness is changed and the value of the magnetic flux density in magnetic detecting element.Following situation is such as shown, outside
Magnetic field be the thickness of 20000A/m, PB be that the magnetic flux density of the thickness of 0.35mm, MB4 magnetic detecting element when being 5mm is
0.0057T, is not affected by external magnetic field.The value of the lowermost (3 row) of table 1 is that to be all as thin as the thickness of PB be 0.1mm, MB4
Thickness is the such situation of 0.5mm, even if also producing the saturated of magnetic core in the external magnetic field of about 10000A/m, even
About 15000A/m, also produces the misoperation of IC.Additionally, in the case of the magnetic flux density of magnetic detecting element uprises, such as when
When reference value is set to 0.01T, in the case of becoming more than it, it is defined as the misoperation of magnetic detecting element.0.1T will be become
Above situation is defined as complete misoperation.
In Table 1, whether can produce by region applying oblique line is distinguished according to the result of calculation of emulation and simulation result
The misoperation of magnetisation detecting element (IC) 11 or whether produce magnetic saturation in magnetic shield portion (magnetic core).As shown in Table 1, even if
The structure in magnetic shield portion is identical, there is also the feelings of the biggest more easily generation magnetic detecting element 11 the misoperation in external magnetic field
Condition, the 1st magnetic shielding material, the 2nd magnetic shielding material thickness the thickest be difficult to produce magnetic detecting element 11 misoperation situation,
The saturated situation of magnetic core is particularly easily produced when the thickness of the 2nd magnetic shielding material is thin.
Hereinafter, the structure interdependence in the magnetic shield portion of magnetic flux density in magnetic detecting element (IC) 11 is illustrated in greater detail.
Fig. 4 is to illustrate that the thickness of the 1st i.e. PB of magnetic shielding material of inner side is fixed as the after-applied outside magnetic of 0.35mm by the result according to table 1
Time interdependent relevant to the value of the magnetic flux density (T) in magnetic detecting element 11 of the thickness of the 2nd magnetic shielding material MB4 in outside
The figure of property.Understanding as shown in Figure 4, at external magnetic field below 20000A/m, the thickness at MB4 is the wide scope of 0.5mm to 10mm
In, the magnetic flux density in magnetic detecting element 11 is below 0.01T, can play the significant magnetic shield produced by dual shield structure
Effect.
Additionally understand, in the case of external magnetic field is 20000A/m, when the thickness of the 2nd magnetic shielding material MB4 is
During 0.5mm, the magnetic flux density in magnetic detecting element (IC) 11 uprises, and shield effectiveness dies down, and shows by external magnetic field
Impact.Also know that, in the case of external magnetic field is 30000A/m, when the thickness of MB4 is below 2mm, magnetic detecting element 11
In magnetic flux density uprise, shield effectiveness dies down, and shows and affected by external magnetic field.
From above situation, when the value of external magnetic field is below 20000A/m, even if minimal thickness is the 1st magnetic shield
Material i.e. about PB=0.35mm, it is also possible to by arranging the MB4 of such as more than thickness 1mm outside it as the 2nd magnetic shield
Material, obtains good Magnetic Shielding Effectiveness, and can significantly suppress the external magnetic field impact on magnetic detecting element (IC).
Fig. 5 is to illustrate the Magnetic testi when thickness of the MB4 by the 2nd magnetic shielding material is fixed as 5mm after-applied external magnetic field
The figure of the thickness interdependence of the PB of the magnetic flux density (T) in element (IC) 11.Understand as shown in Figure 5, by the 2nd magnetic shielding material
When the thickness of i.e. MB4 fixes (5mm) with the thickness of some degree, the thickness at the 1st i.e. PB of magnetic shielding material be 0.05mm extremely
In the scope of 0.35mm, under external magnetic field 10000A/m, 20000A/m, there is shield effectiveness.In magnetic detecting element 11 now
Magnetic flux density roughly the same.
Although additionally, below high-intensity magnetic field 30000A/m, here for arrive about 20000A/m external magnetic field in, even if
The 1 heavily shielding being only the thickness 5mm of MB4 also is able to obtain the shield effectiveness of some degree, but its effect is insufficient.With 1 weight
The situation of shielding is compared, and understands when seeing the result of the dual shield of thickness 5mm of PB0.05mm, MB4, because magnetic flux density
Low and IC misoperation is few, it is possible to obtain the effect of dual shield.
It addition, in theory, relative permeability is different according to the thickness of PB, PB thickness thin relative permeability uprise.
That is, when shape one timing, as shown in formula (1), the long-pending shield effectiveness that becomes of relative permeability and thickness is with linear
Relation.According to simulation result, the shielding combination that the magnetic flux density of IC is minimum is MB4=5mm, PB=0.05mm, next to that MB4=
5mm, PB=0.2mm, followed by MB4=5mm, PB=0.1mm.It is believed that when increasing the thickness of PB, because relative permeability
Reduce, so becoming such result.Also know that, when external magnetic field is more than 30000A/m, even if the thickness at such as PB is
Under conditions of 0.1mm, because producing the misoperation of IC, so not obtaining good shield effectiveness.Therefore, exceed in external magnetic field
In the case of 30000A/m, the thickness such as needing PB is more than 0.35mm.
Fig. 6 is about when the thickness of PB being fixed as 0.35mm, is fixed as 5mm and gives external magnetic field by the thickness of MB4
Magnetic detecting element (IC) 11 in magnetic flux density (T) figure of external magnetic field interdependence is shown.As shown in Figure 6, with this understanding,
At least before arriving external magnetic field 20000A/m, can be described as utilizing the acquisition that is configured in the magnetic shield portion of present embodiment to shield
Cover effect.It follows that when exceeding external magnetic field about 30000A/m, even above-mentioned magnetic shield structure, to be also subject to
The impact of external magnetic field.
As seen from the above, when the value of external magnetic field arrives about 20000A/m, make the 2nd magnetic shielding material i.e.
In the case of the thickness of MB4 reaches about 5mm, the thickness at the PB of the 1st magnetic shielding material is about 0.05mm to 0.35mm
In thickness range, good Magnetic Shielding Effectiveness can be obtained, and the impact of external magnetic field can be suppressed.
Then, the impact about saturation flux density illustrates.As shown in Table 1, when the 2nd magnetic shielding material (ferrum
Oxysome MB4) magnetic saturation (even if strengthening its above magnetic field, the state that the magnetization of magnetic the most correspondingly changes), the 1st magnetic
During shielding material (PB) also magnetic saturation, easily produce the misoperation of magnetic detecting element 11.Therefore there is following such effect, logical
Cross abundant thickness i.e. about the 5mm that the 2nd magnetic shielding material (ferrite MB4) is set to reach the most magnetically saturated degree, it is possible to
The magnetic saturation of suppression magnetic shielding material.
In this case, it is preferable to use the material that relative permeability μ is high and saturation flux density Bs is high.As such
Material, enumerates silicon steel plate, pure iron and permeability alloys PB material illustratively.As the 1st magnetic shielding material, saturated magnetic is preferably used
Flux density is the material of more than 0.4T.Additionally, when the value height of the relict flux density of magnetic shielding material, the impact of external magnetic field
Continue.Therefore, from the viewpoint of maintaining Magnetic Shielding Effectiveness so, relict flux density high material such as silicon is not preferably employed
Steel plate.
(the 2nd embodiment)
Then, the 2nd embodiment of the present invention is described.Fig. 7 (a) is the current sensor apparatus illustrating present embodiment
The sectional view of one structure example.Fig. 7 (b) is the sectional view of the current sensor apparatus of the variation illustrating Fig. 7 (a).Implement with the 1st
The difference of mode is, is made up of the composite of the nonmagnetic substances such as magnetic material and resin material and has the 2nd relative magnetic permeability
2nd magnetic shield portion 23a of rate.Although the action effect relevant with the magnetic shield that this structure produces and the 1st embodiment are identical, but
There is advantage as follows, by using the cheap composite of the nonmagnetic substances such as magnetic material and resin material, with the 1st
The situation of embodiment compares the reduction effect that can improve cost.As shown in Fig. 7 (b), the 2nd magnetic shield portion can be set in inner side
23a.As such composite, such as, can use the composite of ferrite and epoxy resin.As described above that
Sample, according to the current sensor apparatus of present embodiment, has and the impact of external magnetic field can either be suppressed can to drop further again
The such advantage of low cost.
(the 3rd embodiment)
Then, the 3rd embodiment of the present invention is described.Fig. 8 (a) is the current sensor apparatus illustrating present embodiment
The sectional view of one structure example.In the current sensor apparatus 1 of present embodiment, magnetic detecting element 11 side i.e. with sense
Magnetic surface 11a substantially relative to position on configure the 1st magnetic shield portion 21a, with configuration on the substantially vertical position of sense magnetic surface 11a the
2 magnetic shield portion 23c.I.e., in series configuration the 1st magnetic shield portion 21a and the 2nd magnetic shield portion 23c.But in the case, because magnetic
Logical path is series connection, it is advantageous to the saturation flux density of the 1st magnetic shield portion 21a and the 2nd magnetic shield portion 23c is respectively provided with
Higher value.It addition, the 2nd magnetic shield portion 23c is because of the sectional area S of flow direction2Little, so being easily saturated.It is therefore preferable that the
The saturation flux density of 2 magnetic shield portion 23c is the highest.In the case, it is possible to utilize the formula as above-mentioned formula (1) to ask
Go out shield effectiveness.Here, μ is respective relative permeability, and d is the thickness of magnetic shielding material, and S is relative with magnetic detecting element
The sectional area in face.If additionally, the thickness of the 1st magnetic shield portion 21a of Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) and Fig. 2 (a), Fig. 2
B the thickness in the 1st magnetic shield portion 21 of (), Fig. 2 (c) is that same degree both may be used.Can be by arranging the 2nd magnetic of Fig. 8 (a), Fig. 8 (c)
Shielding part 23c make up for only arrange Fig. 8 (a), Fig. 8 (b), the 1st magnetic shield portion 21a of Fig. 8 (c) and produce magnetic shield effect
The impact of fruit.
As described above, according to present embodiment, although making sectional area little but the 2nd magnetic of the i.e. bottom surface side of part of magnetic circuit length
Shielding part 23c utilizes the material of low relative permeability and high saturation magnetic flux density to be formed, and thus can either reduce cost, again can
Enough suppress the impact of external magnetic field.Though also according to thickness, the 1st magnetic shield portion 21a can use relative permeability more than 3000,
Material more than saturation flux density 1.4T, the 2nd magnetic shield portion 23c can use relative permeability more than 100, saturation flux density
The material of more than 1.2T.It addition, as shown in Fig. 8 (b), may utilize the composite wood of the nonmagnetic substances such as magnetic material and resin material
Material is formed at the 2nd magnetic shield portion 23d that bottom surface side is arranged.Such as, the material making resin with ferrite hybrid shaping can be used
Deng.Additionally, as shown in Fig. 8 (c), the 1st magnetic shield portion 21a can be arranged in side, two sides with bottom surface side, and also set at bottom surface side
Put the 2nd magnetic shield portion 23c.It addition, the bonding station of the 1st magnetic shield portion 21a and the 2nd magnetic shield portion 23c is not limited to Fig. 8 (a).Separately
Outward, replaceable 1st magnetic shield portion 21a and the configuration of the 2nd magnetic shield portion 23c.When Fig. 8 (a), Fig. 8 (b), low relative permeability
Material is preferably the thickness of 10～20 times of high relative permeability material.
(the 4th embodiment)
Then, the 4th embodiment of the present invention is described.Fig. 9 (a), Fig. 9 (b) are the current senses illustrating present embodiment
The axonometric chart of one structure example of device device.In the structure shown in Fig. 9 (a), Fig. 9 (b), there is no opening above z direction
Tubular form the 1st magnetic shield portion 51,51a and the 2nd magnetic shield portion 53,53a.Even if in these construct, it is also possible to obtain double
The effect of weight shielding structure.It addition, according to such structure, because being not provided with opening up, magnetic can be made so having
The simplest such advantage of manufacturing process of shielding part.But, compared with surrounding surrounding, the magnetic of the mode of U-shaped opened above
Shield effectiveness is more preferable.Its reason is because, and when magnetic shielding material has the upper wall surrounding surrounding together with sidewall, bottom surface, joins
Put the magnetic detecting element in bus and become the magnetic shielding material close proximity with upper wall, easily produce upper wall and Magnetic testi unit
The magnetic field of part is interfered.It addition, opening is preferably placed at the top of magnetic detecting element, it addition, the side that opening is the biggest.Its reason is
Because being difficult to the interference of upper wall portion and the magnetic detecting element producing magnetic shielding material.Opening be alternatively surround surrounding without upper wall
Form.It addition, the shape of opening is not particularly limited.
Above-mentioned each embodiment does not limit the shape etc. in magnetic shield portion, is only used as one and exemplifies.Can be triangle,
The shape such as polygon, ellipse.It addition, barricade is not limited to straight line, such as, can be the arcuation prominent in IC side.According to above-mentioned
Each embodiment, in current sensor apparatus, can either avoid the misoperation of the current detecting caused by external magnetic field, again can
Enough cut down cost.
Additionally, as the material of high relative permeability, enumerate following material illustratively.Permeability alloys, ferrum can be used
Sial magnetic alloy, Co base non-crystalline material, pure iron, Fe-6.5Si, Fe-3.5Si, Fe base non-crystalline material, nanocrystal Fe base are soft
Magnetic material, silicon steel plate etc..It addition, as the material of low relative permeability, enumerate following material illustratively.Can use
Mixed ferrite in Mn-Zn ferrite, resin and the material etc. that shapes.It addition, the 1st magnetic shield portion 21 can also use magnetic powder
End and the composite of resin.
As the Magnaglo for the 1st magnetic shield portion can use Fe-6.5Si, pure iron, Fe-Si, Fe-Ni, Fe-Al,
The soft magnetic powder of the Fe base alloy powders such as Fe-Co, Fe-Cr, Fe-N, Fe-C, Fe-B, Fe-P, Fe-Al-Si or terres rares
Metal dust, amorphous metal powder etc..The averaged particles footpath of these powder can become 100 μm to 300 μm.
As the resin for the 1st and the 2nd magnetic shield portion, heat-curing resin, uv curing resin can be used
Or thermoplastic resin.As heat-curing resin, can use phenolic resin, epoxy resin, unsaturated polyester resin, polyurethane,
Diallyl phthalate resin, silicone resin etc..As uv curing resin, urethane acrylate system can be used
Row, epoxy acrylate series, series of acrylate, the resin of epoxy series.As thermoplastic resin, polyimides can be used
Or the resin that the heat resistance such as fluororesin is good.These resins can also be used in the 2nd magnetic shield portion 23.Such as, in magnetic powder
The ratio of the resin added in end can become 5～7wt% relative to Magnaglo.Furthermore it is also possible to utilize 1 resin to make tabular
The solidification of two magnetic shielding materials become double-layer structural.
It addition, have the situation producing residual magnetic field due to external magnetic field in shielding magnetic core.Therefore, shielding is being selected
Material time, be preferably selected the material that the magnetic hysteresis i.e. residual magnetic field of few material is little.It addition, the sense magnetic surface of magnetic detecting element and magnetic cup
Cover material and be not necessarily completely parallel.Even if the angle such as 0～10 of the degree that band is between sense magnetic surface and magnetic shielding material
The angle of degree, it may have shield effectiveness.
1st and the 2nd magnetic shield portion with U-shaped can be the magnetic shield material making a piece of plate benging be U-shaped
Material.It addition, multiple magnetic shielding materials be can be combined become U-shaped.In the above-described embodiment, about the knot of diagram on accompanying drawing
Structures etc. are not limited only to this, can suitably change in the range of effect of the present invention playing.It addition, without departing from the present invention's
The scope of purpose, it becomes possible to suitably implement after change.It addition, each element of the present invention can at random carry out accepting or rejecting choosing
Selecting, the invention possessing the structure accepting or rejecting selection is also contained in the present invention.
Industrial utilizability
The present invention may use current sensor apparatus.
Claims (14)
1. a current sensor apparatus, is the current sensor apparatus without core type, it is characterised in that possess:
Magnetic detecting element, magnetic flux produced by its detection current path；And
Magnetic shield portion, it is arranged at around described magnetic detecting element, shield for described magnetic detecting element, from outside
Magnetic flux,
Described magnetic shield portion possesses: the 1st magnetic shield portion being made up of the 1st magnetic shielding material with the 1st relative permeability；And
The 2nd magnetic shield portion being made up of the 2nd magnetic shielding material with the 2nd relative permeability different from described 1st relative permeability.
Current sensor apparatus the most according to claim 1, it is characterised in that
Described 2nd relative permeability is less than described 1st relative permeability, configures the described 2nd in the outside in described 1st magnetic shield portion
Magnetic shield portion.
Current sensor apparatus the most according to claim 1 and 2, it is characterised in that
Described 1st magnetic shield portion and described 2nd magnetic shield portion the most u-shaped shape respectively,
Recess in the described 2nd magnetic shield portion of the most u-shaped shape connects described 1st magnetic cup arranging the most u-shaped shape
Cover portion.
Current sensor apparatus the most according to claim 1, it is characterised in that
Described 2nd relative permeability is less than described 1st relative permeability, by described 2nd magnetic shield portion and described 1st magnetic shield portion
It is connected in series.
Current sensor apparatus the most according to claim 4, it is characterised in that
Described 1st magnetic shield portion is the most relative with the sense magnetic surface of described magnetic detecting element, described 2nd magnetic shield portion and described sense magnetic
Face is substantially vertical.
6. according to the current sensor apparatus described in claim 4 or 5, it is characterised in that
There are two described 1st magnetic shield portions and engage at least 1 described 2nd magnetic shield portion in two described 1st magnetic shield portions,
To the magnetic flux of a described 1st magnetic shield portion input by described 2nd magnetic shield portion, and by another described 1st magnetic
After shielding part, output is to outside.
Current sensor apparatus the most as claimed in any of claims 1 to 6, it is characterised in that
The parameter for obtaining desired Magnetic Shielding Effectiveness is determined according to below equation,
E(total)=E1×E2={ (μ1×d1)/S1}×{(μ2×d2)/S2}。
Current sensor apparatus the most as claimed in any of claims 1 to 7, it is characterised in that
Described magnetic shield portion have with described magnetic detecting element sense magnetic surface generally perpendicular direction on arrange opening.
Current sensor apparatus the most according to claim 8, it is characterised in that
Described current path is configured in the opposition side of the described opening of described magnetic detecting element.
Current sensor apparatus the most as claimed in any of claims 1 to 9, it is characterised in that
Described 1st relative permeability is more than 3000.
11. current sensor apparatus as claimed in any of claims 1 to 10, it is characterised in that
Described 2nd relative permeability is less than more than 100 2500.
12. according to the current sensor apparatus described in any one in claim 1 to 11, it is characterised in that
Described 1st magnetic shielding material is Fe-Ni alloy/C, and described 2nd magnetic shielding material is ferrite.
13. according to the current sensor apparatus described in claim 11 or 12, it is characterised in that
Described 2nd magnetic shielding material is formed by the material comprising magnetic material and resin material.
14. according to the current sensor apparatus described in any one in claim 7 to 13, it is characterised in that
The thickness d in described 1st magnetic shield portion1It is 0.05mm～0.35mm, the thickness d in described 2nd magnetic shield portion2Be 3mm～
10mm。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2015045000A JP6190835B2 (en) | 2015-03-06 | 2015-03-06 | Current sensor device |
| JP2015-045000 | 2015-03-06 |
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| CN201610124468.0A Active CN105938154B (en) | 2015-03-06 | 2016-03-04 | Current sensor device |
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| CN109932548A (en) * | 2017-12-18 | 2019-06-25 | 日立金属株式会社 | Current sensor |
| CN112119316A (en) * | 2017-10-02 | 2020-12-22 | Abb瑞士股份有限公司 | Flux absorber for power line equipment |
| CN112424617A (en) * | 2018-07-11 | 2021-02-26 | 莱姆国际股份有限公司 | Current sensor with integrated primary conductor |
| CN113495183A (en) * | 2020-03-19 | 2021-10-12 | Tdk株式会社 | Current sensor, method for manufacturing same, electric control device, and method for designing current sensor |
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| JP6744432B2 (en) * | 2017-01-17 | 2020-08-19 | 日立オートモティブシステムズ株式会社 | Power converter |
| EP3508863B1 (en) * | 2018-01-05 | 2023-06-07 | Melexis Technologies SA | Offset current sensor structure |
| JP7367224B2 (en) * | 2020-07-28 | 2023-10-23 | アルプスアルパイン株式会社 | current sensor |
| DE112021006854T5 (en) | 2021-01-19 | 2023-11-16 | Alps Alpine Co., Ltd. | CURRENT DETECTION DEVICE |
| WO2024095585A1 (en) * | 2022-11-02 | 2024-05-10 | アルプスアルパイン株式会社 | Current sensor |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105938154B (en) | 2020-02-07 |
| JP2016164523A (en) | 2016-09-08 |
| CN205608062U (en) | 2016-09-28 |
| JP6190835B2 (en) | 2017-08-30 |
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