CN205595331U - Novel electrostatic discharge protection device - Google Patents
Novel electrostatic discharge protection device Download PDFInfo
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- CN205595331U CN205595331U CN201620211129.1U CN201620211129U CN205595331U CN 205595331 U CN205595331 U CN 205595331U CN 201620211129 U CN201620211129 U CN 201620211129U CN 205595331 U CN205595331 U CN 205595331U
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Abstract
The utility model discloses a novel electrostatic discharge protection device, including P epitaxial layer that has a conductivity type and the N substrate that has the 2nd conductivity type. P epitaxial layer preparation in the top of N substrate. Structural design two -layer like this makes this electrostatic discharge protector possess two ESD route of releasing. Under the low current condition, ESD current conveyance P epitaxial layer, under high electric current condition, the ESD electric current is mainly through the N substrate. The benefit done like this is that the design through P epitaxial layer inner structure obtains adjustable trigger voltage, obtains high robustness and high maintaining voltage with ESD electric current direction N substrate under high electric current condition. The utility model provides a pair of novel electrostatic discharge protection device has high robustness, high maintaining voltage, trigger voltage adjustable characteristics.
Description
Technical field
This utility model relates to a kind of novel electrostatic discharge protective device, belongs to Integrated circuit electrostatic guard technology field.
Background technology
Along with the development of semiconductor process technique, occur in that the integrated circuit of increasing functional diversities.In order to adapt to the application demand of various electronic system, these integrated circuits often have different running voltages.Additionally, in order to reduce the component counts on printed circuit board (PCB), improve the reliability that electronic system is overall, increasing functional circuit is integrated in the integrated circuit of monolithic makes integrated SOC(system on a chip).This system on chip circuit inherently has the pin of different operating voltage.In order to improve the reliability of integrated circuit, either system on chip circuit or the integrated circuit of other specific functions, it is desirable to have need different trigger voltages corresponding to the electrostatic discharge protective device of different operating voltage, i.e. electrostatic discharge protective device.If the trigger voltage of electrostatic discharge protective device is more than the failure voltage of ic pin, then it can not provide effective protection；If the trigger voltage of electrostatic discharge protective device is less than the running voltage of ic pin, then it will affect the normal work of integrated circuit.Therefore Integrated circuit designers needs the integrated circuit selecting the electrostatic discharge protective device with suitable trigger voltage to carry out reliable design.This also makes corresponding electrostatic discharge protective device designer need to develop the device of different structure to meet above-mentioned requirements.But the integrated different electrostatic discharge protective device with multiple trigger voltage needs to spend the substantial amounts of research and development time in a semiconductor technology, and this also makes Integrated circuit designers unfamiliar to semiconductor device need to spend the more time to go to consider how to select suitable electrostatic discharge protective device.
For the SOC(system on a chip) being produced on monolithic integrated optical circuit, in many application scenarios, require that its ESD protection capability reaches system-level ESD protection capability.This just requires that the ESD protection device of protection on sheet of design has higher robustness (the highest ESD current drain ability), and sufficiently high maintenance voltage carrys out the bolt-lock problem caused during the work of anti-locking system by esd event.This SOC(system on a chip) monolithic integrated optical circuit is produced on SOI(Silicon On Insulator often, SOI) on material, but the heat dispersion of SOI material is poor causes the robustness of traditional ESD protection device relatively low, it is impossible to meet system-level ESD protection requirement.
Utility model content
Purpose: in order to overcome the deficiencies in the prior art, this utility model provides a kind of novel electrostatic discharge protective device.
Technical scheme: for solving above-mentioned technical problem, the technical solution adopted in the utility model is:
A kind of novel electrostatic discharge protective device, including having the P epitaxial layer (201) of the first conduction type and having the N substrate (101) of the second conduction type；Described P epitaxial layer (201) is produced on the top of N substrate (101)；
From left to right it is disposed with three oxygen buried layers (102) in described N substrate, cooks up anode region and cathode chamber；Arranging the P buried regions (104) of the first conduction type in anode region, P buried regions (104) is connected with middle oxygen buried layer (102), leaves spacing with the oxygen buried layer (102) in left side；Arrange the p-well (103) of the first conduction type on cathode chamber, p-well (103) is all connected with the oxygen buried layer (102) of middle oxygen buried layer (102) and right side；
Described P epitaxial layer (201) is produced on the top of N substrate (101), is connected with N substrate (101)；STI oxide layer (202) isolation has all been made in the left side of P epitaxial layer and right side；Being the active area of device between two oxide layers (202), the lateral attitude of active area contains the position on described anode region and cathode chamber；It is respectively provided with a N+ injection region (203) in the upper described anode region of P epitaxial layer (201) and cathode chamber；The right side of the N+ injection region (203) of anode region is connected with middle oxygen buried layer (102), and has exceeded the border of middle oxygen buried layer (102)；The left side of the N+ injection region (203) on cathode chamber is connected with middle oxygen buried layer (102), and has exceeded the border of middle oxygen buried layer (102)；Two N+ injection regions (203) are not attached to, and centre is provided with P epitaxial layer (201)；
Described P epitaxial layer (201) surface also makes oxide layer (204), the electrical connection metal of P epitaxial layer (201) with top has been isolated；Also having made contact hole in the anode region of oxide layer and cathode chamber, made metal electrode (205) in contact hole, the N+ injection region (203) with anode region and cathode chamber forms Ohmic contact respectively, and is drawn in anode region and cathode chamber.
Preferably, also include: P+ injection region, the right side, N+ injection region (203) of described anode region is also disposed with oxide layer (202), P+ injection region (206), and described oxide layer (202), P+ injection region (206) are arranged at p-well (103) upper surface；Described P+ injection region (206) upper surface is also equipped with contact hole, metal electrode (205) is made in described contact hole, respectively with N+ injection region, anode region (203), the N+ injection region (203) on cathode chamber and P+ injection region (206) form Ohmic contact, and are drawn in anode region and cathode chamber.
Preferably, also include grid structure, described grid structure includes the gate oxide (301) being directed at the size of P epitaxial layer (201), at the gate electrode (303) having polysilicon or metal material fabricated above of described gate oxide (301), all make grid side wall (302) in the both sides of gate oxide and gate electrode；Gate oxide (301), gate electrode (303) and grid side wall (302) constitute a complete grid structure.
Beneficial effect: a kind of novel electrostatic discharge protective device that this utility model provides, including having the P epitaxial layer of the first conduction type and having the N substrate of the second conduction type.Described P epitaxial layer is produced on the top of N substrate.So structure design of two-layer makes this electrostatic discharge protective device have two ESD to release path.Under low current conditions, ESD electric current passes through P epitaxial layer, and under high current conditions, ESD electric current mainly passes through N substrate.Advantage of this is that and obtain adjustable trigger voltage by the design of P epitaxial layer inner structure, under high current conditions ESD conduct current N substrate is obtained high robust and high maintenance voltage.The size of epitaxial layer length is adjustable in.Different trigger voltages is obtained by the size adjusting this spacing.
Accompanying drawing explanation
Fig. 1 is the profile of a kind of electrostatic discharge protective device described in embodiment 1.
Fig. 2 (a) is the equivalent circuit diagram of a kind of electrostatic discharge protective device described in embodiment 1.
Fig. 2 (b) is the corresponding relation between profile and the equivalent circuit diagram of a kind of electrostatic discharge protective device described in embodiment 1.
Fig. 3 (a) and (b), (c), (d), (e), (f), (g) are the intermediate fabrication step of a kind of electrostatic discharge protective device described in embodiment 1.
Fig. 4 is the current-voltage characteristic figure of a kind of electrostatic discharge protective device of the epitaxial layer reserved with different length.
Fig. 5 is the profile of the another kind of electrostatic discharge protective device described in embodiment 2.
Fig. 6 (a) is the equivalent circuit diagram of the another kind of electrostatic discharge protective device described in embodiment 2.
Fig. 6 (b) is the corresponding relation between profile and the equivalent circuit diagram of the another kind of electrostatic discharge protective device described in embodiment 2.
Fig. 7 is the profile of the another kind of electrostatic discharge protective device described in embodiment 3.
Fig. 8 (a) is the equivalent circuit diagram of the another kind of electrostatic discharge protective device described in embodiment 3.
Fig. 8 (b) is the corresponding relation between profile and the equivalent circuit diagram of the another kind of electrostatic discharge protective device described in embodiment 3.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is further described.
Embodiment 1
It is illustrated in figure 1 the profile of a kind of novel electrostatic discharge protective device.This novel electrostatic discharge protective device, including having the P epitaxial layer 201 of the first conduction type and having the N substrate 101 of the second conduction type.Described P epitaxial layer 201 is produced on the top of N substrate 101.
From left to right it is disposed with three oxygen buried layers 102 in described N substrate, cooks up anode region and the cathode chamber of this device.Being additionally provided with a P buried regions 104 with the first conduction type in anode region, this P buried regions 104 is connected with middle oxygen buried layer 102, leaves certain spacing with the oxygen buried layer 102 in left side.Be provided with a p-well 103 with the first conduction type on cathode chamber, this p-well 103 is all connected with the oxygen buried layer 102 of middle oxygen buried layer 102 and right side.
Described P epitaxial layer 201 is produced on the top of N substrate 101, is connected with N substrate 101.All make STI oxide layer 202 in the left side of P epitaxial layer and right side to isolate.Being the active area of device between two oxide layers 202, the lateral attitude of this active area contains the position on described anode region and cathode chamber.Anode region described on P epitaxial layer 201 and cathode chamber are respectively provided with a N+ injection region 203.The right side of the N+ injection region 203 of anode region is connected with middle oxygen buried layer 102 and has exceeded its border.The left side of the N+ injection region 203 on cathode chamber is also connected with middle oxygen buried layer 102 and has exceeded its border.But the two N+ injection region 203 is not attached to, there is certain spacing centre, leaves original P epitaxial layer 201.The size of this spacing is adjustable in.
Described P epitaxial layer 201 surface has also made oxide layer 204, by P epitaxial layer 201 with its above electrical connection metal isolate.Also having made contact hole in the anode region of oxide layer and cathode chamber, made metal electrode 205 in contact hole, the N+ injection region 203 with anode region and cathode chamber forms Ohmic contact respectively, and is drawn in anode region and cathode chamber.
The equivalent circuit diagram of a kind of electrostatic discharge protective device described by this embodiment is as shown in Figure 2 (a) shows.In order to preferably that equivalent circuit diagram is corresponding with the profile of the electrostatic discharge protective device of this embodiment, equivalent circuit diagram is embedded in profile, as shown in Fig. 2 (b).Specific corresponding to relationship description is as follows:
The N+ of anode region injects 203 and P epitaxial layers 201 and forms diode D1, and the N+ on cathode chamber injects 203 and P epitaxial layers 201 and forms diode D2.
P-well 103, N substrate 101 and P buried regions 104 constitutes PNP type triode Q1；The N+ on cathode chamber injects 203, and p-well 103 and N substrate 101 constitute NPN audion Q2.Owing to the positive feedback effect of PNP triode Q1 and NPN audion Q2 forms the SCR structure of high current drain ability, obtain the characteristic of high robust.N+ the injection region 203 and P buried regions 104 of anode region forms diode D3, and the effect of this diode is to anode region by silicon controlled high-current leading, forms lasting current drain path.
Resistance R1 is the equivalent resistance of N substrate 101.
In order to more clearly illustrate a kind of electrostatic discharge protective device described by this embodiment, its Making programme is described as follows:
One piece of N substrate 101 makes oxygen buried layer 102 and cooks up anode region and the cathode chamber of device, as shown in Fig. 3 (a).
P-well 103 is made by the mode such as ion implanting and thermal diffusion, as shown in Figure 3 (b) on cathode chamber.
By the way of ion implanting, the P buried regions 104 of high concentration is made, as shown in Figure 3 (c) in anode region.
The N substrate 101 making oxygen buried layer 102, p-well 103 and P buried regions 104 makes P epitaxial layer 201, by the way of extension as shown in Fig. 3 (d).
P epitaxial layer 201 makes STI shallow-trench isolation 202, by this electrostatic discharge protective device and other device isolation on epitaxial layer 201.The STI shallow-trench isolation 202 i.e. made cooks up the active region of this electrostatic discharge protective device, as shown in Fig. 3 (e).
Active region on P epitaxial layer 201 has respectively made a N+ by ion implanting and has injected 203, as shown in Fig. 3 (f) in anode region and cathode chamber.Two N+ inject and leave spacing between 203, expose required P epitaxial layer 201, obtain suitable trigger voltage, as shown in Fig. 3 (f).
P epitaxial layer 201 makes the oxide layer 204 for isolation by modes such as chemical vapor depositions, and cooks up the through hole on anode region and cathode chamber, be used for making metal electrode, as shown in Fig. 3 (g).
Finally, metal electrode 205 is made, it is thus achieved that a kind of electrostatic discharge protective device in this embodiment as shown in Figure 1.
As it has been described above, two N+ injection regions 203 are not attached to, leave original P epitaxial layer 201.Its size is adjustable, and L as shown in Figure 4 marks.For the device of the different length L of design, such as L1 > L2 > L3, then corresponding trigger voltage is: V1 > V2 > V3 in this embodiment.Current-voltage characteristic curve is as shown in Figure 4.
Embodiment 2
Another kind of novel electrostatic discharge protective device is the length elongating p-well 103 on the basis of embodiment 1, is further added by a P+ injection region 206, connects to draw p-well 103 by metal and receives cathode terminal.Specific embodiment is as follows:
As it is shown in figure 5, another kind of novel electrostatic discharge protective device, including there is the P epitaxial layer 201 of the first conduction type and there is the N substrate 101 of the second conduction type.Described P epitaxial layer 201 is produced on the top of N substrate 101.
From left to right it is disposed with three oxygen buried layers 102 in described N substrate, cooks up anode region and the cathode chamber of this device.Being additionally provided with a P buried regions 104 with the first conduction type in anode region, this P buried regions 104 is connected with middle oxygen buried layer 102, leaves certain spacing with the oxygen buried layer 102 in left side.Be provided with a p-well 103 with the first conduction type on cathode chamber, this p-well 103 is all connected with the oxygen buried layer 102 of middle oxygen buried layer 102 and right side.
Described P epitaxial layer 201 is produced on the top of N substrate 101, is connected with N substrate 101.On P epitaxial layer from left to right, making has three STI oxide layers isolation 202 successively.The active area of device is cooked up in three oxide layer 202 isolation, and the lateral attitude of this active area contains the position on described anode region and cathode chamber.Anode region described on P epitaxial layer 201 and cathode chamber are respectively provided with a N+ injection region 203.The right side of the N+ injection region 203 of anode region is connected with middle oxygen buried layer 102 and has exceeded its border.The left side of the N+ injection region 203 on cathode chamber is also connected with middle oxygen buried layer 102 and has exceeded its border.But the two N+ injection region 203 is not attached to, there is certain spacing centre, leaves original P epitaxial layer 201.The size of this spacing is adjustable in.Cathode chamber in the present embodiment is additionally provided with a P+ injection region 206, and this P+ injection region 206 is produced on above p-well 103, for drawing the electric current in p-well 103.
Described P epitaxial layer 201 surface has also made oxide layer 204, by P epitaxial layer 201 with its above electrical connection metal isolate.Also having made contact hole in the anode region of oxide layer and cathode chamber, made metal electrode 205 in contact hole, respectively with N+ injection region, anode region 203, the injection region 206, N+ injection region 203 and P+ on cathode chamber forms Ohmic contact, and is drawn in anode region and cathode chamber.
The equivalent circuit diagram of a kind of electrostatic discharge protective device described by this embodiment is as shown in Figure 6 (a).In order to preferably that equivalent circuit diagram is corresponding with the profile of the electrostatic discharge protective device of this embodiment, equivalent circuit diagram is embedded in profile, as shown in Figure 6 (b).Specific corresponding to relationship description is as follows:
The N+ of anode region injects 203 and P epitaxial layers 201 and forms diode D1, and the N+ on cathode chamber injects 203 and P epitaxial layers 201 and forms diode D2.
P-well 103, N substrate 101 and P buried regions 104 constitutes PNP type triode Q1；The N+ on cathode chamber injects 203, and p-well 103 and N substrate 101 constitute NPN audion Q2.Owing to the positive feedback effect of PNP triode Q1 and NPN audion Q2 forms the SCR structure of high current drain ability, obtain the characteristic of high robust.The N+ of anode region injects 203 and P buried regions 104 and forms diode D3, and the effect of this diode is to anode region by silicon controlled high-current leading, forms lasting current drain path.P-well 103 is drawn out to cathode terminal by the P+ injection region 206 on cathode chamber so that p-well 103 and N substrate 101 form diode D4 so that there is an effective diode paths from negative electrode to anode.
The P+ injection region 206 increased also makes the p-well 103 elongated have an equivalent resistance R2 to negative electrode.Resistance R1 is the equivalent resistance of N substrate 101.
Embodiment 3
The specific embodiment of another kind of novel electrostatic discharge protective device is the grid structure fabricated above on the basis of embodiment 1 at the P epitaxial layer 201 reserved.Specific embodiment is as follows:
As it is shown in fig. 7, another kind of novel electrostatic discharge protective device, including there is the P epitaxial layer 201 of the first conduction type and there is the N substrate 101 of the second conduction type.Described P epitaxial layer 201 is produced on the top of N substrate 101.
From left to right it is disposed with three oxygen buried layers 102 in described N substrate, cooks up anode region and the cathode chamber of this device.Being additionally provided with a P buried regions 104 with the first conduction type in anode region, this P buried regions 104 is connected with middle oxygen buried layer 102, leaves certain spacing with the oxygen buried layer 102 in left side.Be provided with a p-well 103 with the first conduction type on cathode chamber, this p-well 103 is all connected with the oxygen buried layer 102 of middle oxygen buried layer 102 and right side.
Described P epitaxial layer 201 is produced on the top of N substrate 101, is connected with N substrate 101.STI oxide layer isolation 202 has all been made in the left side of P epitaxial layer and right side.Being the active area of device between two oxide layers 202, the lateral attitude of this active area contains the position on described anode region and cathode chamber.Anode region described on P epitaxial layer 201 and cathode chamber are respectively provided with a N+ injection region 203.The right side of the N+ injection region 203 of anode region is connected with middle oxygen buried layer (102) and has exceeded its border.The left side of the N+ injection region 203 on cathode chamber is also connected with middle oxygen buried layer 102 and has exceeded its border.But the two N+ injection region 203 is not attached to, there is certain spacing centre, leaves original P epitaxial layer 201.The size of this spacing is adjustable in.
A grid structure is had in described the fabricated above of original P epitaxial layer 201 that stay.Described grid structure includes a gate oxide 301 being directed at the size leaving original P epitaxial layer 201, at the gate electrode 303 having polysilicon or metal material fabricated above of described gate oxide 301, all make grid side wall 302 in the both sides of gate oxide and gate electrode.Gate oxide 301, gate electrode 303 and grid side wall 302 constitute a complete grid structure.
Described P epitaxial layer 201 surface has also made oxide layer 204, by P epitaxial layer 201 with its above electrical connection metal isolate.Also having made contact hole in the anode region of oxide layer and cathode chamber, made metal electrode 205 in contact hole, the N+ injection region 203 with anode region and cathode chamber forms Ohmic contact respectively, and is drawn in anode region and cathode chamber.
The equivalent circuit diagram of a kind of electrostatic discharge protective device described by this embodiment is as shown in Figure 8 (a).In order to preferably that equivalent circuit diagram is corresponding with the profile of the electrostatic discharge protective device of this embodiment, equivalent circuit diagram is embedded in profile, as shown in Figure 8 (b) shows.Specific corresponding to relationship description is as follows:
The N+ of anode region injects 203 and P epitaxial layers 201 and forms diode D1, and the N+ on cathode chamber injects 203 and P epitaxial layers 201 and forms diode D2.
Described grid structure injects 203 composition fet M1 with the N+ injection 203 of anode region and the N+ on cathode chamber.For regulating the trigger voltage of the another kind of electrostatic discharge protective device of this embodiment further.
P-well 103, N substrate 101 and P buried regions 104 constitutes PNP type triode Q1；The N+ on cathode chamber injects 203, and p-well 103 and N substrate 101 constitute NPN audion Q2.Owing to the positive feedback effect of PNP triode Q1 and NPN audion Q2 forms the SCR structure of high current drain ability, obtain the characteristic of high robust.N+ the injection region 203 and P buried regions 104 of anode region forms diode D3, and the effect of this diode is to anode region by silicon controlled high-current leading, forms lasting current drain path.
Resistance R1 is the equivalent resistance of N substrate 101.
The above is only preferred implementation of the present utility model; it is noted that, for those skilled in the art; on the premise of without departing from this utility model principle, it is also possible to make some improvements and modifications, these improvements and modifications also should be regarded as protection domain of the present utility model.
Claims (3)
1. a novel electrostatic discharge protective device, it is characterised in that: include the P epitaxial layer (201) with the first conduction type and there is the N substrate (101) of the second conduction type；Described P epitaxial layer (201) is produced on the top of N substrate (101)；
From left to right it is disposed with three oxygen buried layers (102) in described N substrate, cooks up anode region and cathode chamber；Arranging the P buried regions (104) of the first conduction type in anode region, P buried regions (104) is connected with middle oxygen buried layer (102), leaves spacing with the oxygen buried layer (102) in left side；Arrange the p-well (103) of the first conduction type on cathode chamber, p-well (103) is all connected with the oxygen buried layer (102) of middle oxygen buried layer (102) and right side；
Described P epitaxial layer (201) is produced on the top of N substrate (101), is connected with N substrate (101)；STI oxide layer (202) isolation has all been made in the left side of P epitaxial layer and right side；Being the active area of device between two oxide layers (202), the lateral attitude of active area contains the position on described anode region and cathode chamber；It is respectively provided with a N+ injection region (203) in the upper described anode region of P epitaxial layer (201) and cathode chamber；The right side of the N+ injection region (203) of anode region is connected with middle oxygen buried layer (102), and has exceeded the border of middle oxygen buried layer (102)；The left side of the N+ injection region (203) on cathode chamber is connected with middle oxygen buried layer (102), and has exceeded the border of middle oxygen buried layer (102)；Two N+ injection regions (203) are not attached to, and centre is provided with P epitaxial layer (201)；
Described P epitaxial layer (201) surface also makes oxide layer (204), the electrical connection metal of P epitaxial layer (201) with top has been isolated；Also having made contact hole in the anode region of oxide layer and cathode chamber, made metal electrode (205) in contact hole, the N+ injection region (203) with anode region and cathode chamber forms Ohmic contact respectively, and is drawn in anode region and cathode chamber.
A kind of novel electrostatic discharge protective device the most according to claim 1, it is characterized in that: also include: P+ injection region, the right side, N+ injection region (203) of described anode region is also disposed with oxide layer (202), P+ injection region (206), and described oxide layer (202), P+ injection region (206) are arranged at p-well (103) upper surface；Described P+ injection region (206) upper surface is also equipped with contact hole, metal electrode (205) is made in described contact hole, respectively with N+ injection region, anode region (203), the N+ injection region (203) on cathode chamber and P+ injection region (206) form Ohmic contact, and are drawn in anode region and cathode chamber.
A kind of novel electrostatic discharge protective device the most according to claim 1, it is characterized in that: also include grid structure, described grid structure includes the gate oxide (301) being directed at the size of P epitaxial layer (201), at the gate electrode (303) having polysilicon or metal material fabricated above of described gate oxide (301), all make grid side wall (302) in the both sides of gate oxide and gate electrode；Gate oxide (301), gate electrode (303) and grid side wall (302) constitute a complete grid structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620211129.1U CN205595331U (en) | 2016-03-18 | 2016-03-18 | Novel electrostatic discharge protection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620211129.1U CN205595331U (en) | 2016-03-18 | 2016-03-18 | Novel electrostatic discharge protection device |
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| CN205595331U true CN205595331U (en) | 2016-09-21 |
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| CN201620211129.1U Withdrawn - After Issue CN205595331U (en) | 2016-03-18 | 2016-03-18 | Novel electrostatic discharge protection device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702674A (en) * | 2016-03-18 | 2016-06-22 | 江苏艾伦摩尔微电子科技有限公司 | Novel electrostatic discharge protection apparatus |
| CN107833884A (en) * | 2017-11-02 | 2018-03-23 | 杰华特微电子（杭州）有限公司 | Ghyristor circuit and its device architecture for electrostatic protection |
-
2016
- 2016-03-18 CN CN201620211129.1U patent/CN205595331U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702674A (en) * | 2016-03-18 | 2016-06-22 | 江苏艾伦摩尔微电子科技有限公司 | Novel electrostatic discharge protection apparatus |
| CN105702674B (en) * | 2016-03-18 | 2019-01-04 | 江苏艾伦摩尔微电子科技有限公司 | A kind of electrostatic discharge protective device |
| CN107833884A (en) * | 2017-11-02 | 2018-03-23 | 杰华特微电子（杭州）有限公司 | Ghyristor circuit and its device architecture for electrostatic protection |
| CN107833884B (en) * | 2017-11-02 | 2023-06-23 | 杰华特微电子股份有限公司 | Silicon controlled rectifier circuit for electrostatic protection and device structure thereof |
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