CN205564922U - Miniature microwave filter of UHF wave band - Google Patents
Miniature microwave filter of UHF wave band Download PDFInfo
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- CN205564922U CN205564922U CN201620328945.0U CN201620328945U CN205564922U CN 205564922 U CN205564922 U CN 205564922U CN 201620328945 U CN201620328945 U CN 201620328945U CN 205564922 U CN205564922 U CN 205564922U
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- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 10
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 claims description 6
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 238000004891 communication Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
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Abstract
The utility model relates to a miniature microwave filter of UHF wave band relates to a miniature microwave filter, include 13 layers of base plate and the parallel resonance unit of realizing with stripline structure, above -mentioned structure all adopts multilayer low temperature to burn ceramic technology altogether and realizes. The utility model has the advantages of easy debugging, light in weight, small, but the reliability is high, the electrical property good, temperature stability is good, electrical property good, the with low costs mass production of uniformity in batches, the communication, satellite communication etc. That are applicable to corresponding microwave frequencies have in harsh occasion that requires and the corresponding system volume, electrical property, temperature stability and reliability.
Description
Technical field
This utility model relates to a kind of micro microwave filter, particularly relates to a kind of UHF waveband miniature microwave filter
Ripple device.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System,
High-performance, low cost and miniaturization have become as the developing direction of microwave current/RF application, to microwave filtering
The performance of device, size, reliability and cost are all had higher requirement.The master of this component capabilities is described
Index is wanted to have: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, logical
Tape input/output voltage standing-wave ratio, insert phase shift and delay/frequency characteristic, temperature stability, volume, weight,
Reliability etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to by passive element
Being built in inside medium substrate, active component can also be mounted on substrate surface makes passive/active collection simultaneously
The functional module become.LTCC technology is at cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal
Change, design diversity and the aspect such as motility and high frequency performance all show many merits, it has also become passive collection
The mainstream technology become.It has high q-factor, it is simple to embedded passive device, and thermal diffusivity is good, and reliability is high, resistance to
High temperature, rushes the advantages such as shake, utilizes LTCC technology, can well process size little, and precision is high, closely
Type is good, and little microwave device is lost.Owing to LTCC technology has the integrated advantage of 3 D stereo, at microwave frequency band
It is widely used for manufacturing various microwave passive components, it is achieved passive element highly integrated.Based on LTCC technique
Stack technology, it is possible to achieve three-dimensionally integrated so that various micro microwave filter have size little, weight
Amount is light, performance is excellent, reliability is high, batch production performance concordance is good and the plurality of advantages such as low cost, utilization
Its three-dimensionally integrated construction features, it is possible to achieve micro microwave filter.
Utility model content
The purpose of this utility model is to provide a kind of UHF waveband micro microwave filter, uses LTCC technology
Strip lines configuration, it is achieved volume is little, lightweight, reliability is high, excellent electrical property, easy to use, suitable
Miniature microwave filtering wide by scope, that yield rate is high, concordance is good in batches, cost is low, temperature performance is stable
Device.
For achieving the above object, this utility model is by the following technical solutions:
A kind of UHF waveband micro microwave filter, including 13 laminar substrates, described 13 laminar substrates are from upper
The first ground plane GND1, the second capacitor layers GC2, the 3rd ground plane GND2, the 4th electric capacity is set gradually under to
Layer GC4, the 5th ground plane GND3, the 6th strip line layer LZ2, the 7th strip line layer LL1, the 8th strip line
Layer LZ2, the 9th ground plane GND4, the tenth capacitor layers GC1, the 11st ground plane GND5, the 12nd electric capacity
Layer GC3 and the 13rd ground plane GND6；
Described 13 laminar substrates are provided with input port P1, the first input inductance Lin1, first order parallel resonance
Unit L1, Via1, C1, second level parallel resonance unit L2, Via2, C2, third level parallel resonance unit
L3, Via3, C3, fourth stage parallel resonance unit L4, Via4, C4, the first outputting inductance Lout1,
One Z-shaped interstage coupling strip line Z1, the second Z-shaped interstage coupling strip line Z2, total ground wire and output port P2；
First order parallel resonance unit includes the first strip line L1, the first ground capacity C1 and the first through hole
Via1, the first strip line L1 are located on the 7th strip line layer LL1, and the first ground capacity C1 is located at the tenth electricity
Holding on layer GC1, the first strip line L1 and the first ground capacity C1 are connected by the first through hole Via1；
Second level parallel resonance unit includes the second strip line L2, the second ground capacity C2 and the second through hole
Via2, the second strip line L2 are located on the 7th strip line layer LL1, and the second ground capacity C2 is located at the second electricity
Holding on layer GC2, the second strip line L2 and the second ground capacity C2 are connected by the second through hole Via2；
Third level parallel resonance unit includes the 3rd strip line L3, the 3rd ground capacity C3 and third through-hole
Via3, the 3rd strip line L3 are located on the 7th strip line layer LL1, and the 3rd ground capacity C3 is located at the 12nd
In capacitor layers GC3, the 3rd strip line L3 and the 3rd ground capacity C3 are connected by third through-hole Via3；
Fourth stage parallel resonance unit includes the 4th strip line L4, the 4th ground capacity C4 and fourth hole
Via4, the 4th strip line L4 are located on the 7th strip line layer LL1, and the 4th ground capacity C4 is located at the 4th electricity
Holding on layer GC4, the 4th strip line L4 and the 4th ground capacity C4 are connected by fourth hole Via4；
Input inductance Lin is located on the 7th strip line layer LL1, and input port P1 is by input inductance Lin even
Meeting the first strip line L1, outputting inductance Lout is located on the 7th strip line layer LL1, and output port P2 passes through
Outputting inductance Lout connects the 4th strip line L4, the first Z-shaped interstage coupling strip line Z1 and is located at the 6th banding
On line layer LZ2, the second Z-shaped interstage coupling strip line Z2 is located at the 8th strip line layer LZ2；
First strip line L1 and the 4th strip line L4 is one end and connects total ground wire other end open circuit, and connects
The connection end connecing total ground wire is identical, the second strip line L2 and the 3rd strip line L3 one end connect total ground wire another
End open circuit, and the connection end connecting total ground wire is identical, the first strip line L1 and the company of the 4th strip line L4
Connect total ground terminal direction in opposite direction with the total ground terminal of connection of the second strip line L2 and the 3rd strip line L3；
First Z-shaped interstage coupling strip line Z1 two ends are all connected with total ground wire, the second Z-shaped interstage coupling strip line
Z2 two ends are all connected with total ground wire.
Described a kind of UHF waveband micro microwave filter uses multilamellar LTCC technique to make.
Described first ground plane GND1, the 3rd ground plane GND2, the 5th ground plane GND3, the 9th ground plane
GND4, the 11st ground plane GND5 and the 13rd ground plane GND6 are all connected with total ground wire.
A kind of high performance filter module described in the utility model, uses LTCC technology to achieve pass band width
For 2.2GHz-2.4GHz, input port return loss is better than 16dB, and output port insertion loss is better than 2dB
Microwave filter；
This utility model uses LTCC technology, and volume is little, lightweight, low cost, reliability high, and electricity
Road realizes simple in construction, it is easy to produce in enormous quantities.
Accompanying drawing explanation
Fig. 1 is profile and the internal structure schematic diagram of this utility model a kind of UHF waveband micro microwave filter；
Fig. 2 is the amplitude-versus-frequency curve of this utility model a kind of UHF waveband micro microwave filter output port；
Fig. 3 is the stationary wave characteristic curve of this utility model a kind of UHF waveband micro microwave filter input port.
Detailed description of the invention
A kind of UHF waveband micro microwave filter as shown in Figure 1, including 13 laminar substrates, described 13
Laminar substrate set gradually from top to bottom the first ground plane GND1, the second capacitor layers GC2, the 3rd ground plane GND2,
4th capacitor layers GC4, the 5th ground plane GND3, the 6th strip line layer LZ2, the 7th strip line layer LL1,
Eight strip line layer LZ2, the 9th ground plane GND4, the tenth capacitor layers GC1, the 11st ground plane GND5,
12 capacitor layers GC3 and the 13rd ground plane GND6；
Described 13 laminar substrates are provided with input port P1, the first input inductance Lin1, first order parallel resonance
Unit L1, Via1, C1, second level parallel resonance unit L2, Via2, C2, third level parallel resonance unit
L3, Via3, C3, fourth stage parallel resonance unit L4, Via4, C4, the first outputting inductance Lout1,
One Z-shaped interstage coupling strip line Z1, the second Z-shaped interstage coupling strip line Z2, total ground wire and output port P2；
First order parallel resonance unit includes the first strip line L1, the first ground capacity C1 and the first through hole
Via1, the first strip line L1 are located on the 7th strip line layer LL1, and the first ground capacity C1 is located at the tenth electricity
Holding on layer GC1, the first strip line L1 and the first ground capacity C1 are connected by the first through hole Via1；
Second level parallel resonance unit includes the second strip line L2, the second ground capacity C2 and the second through hole
Via2, the second strip line L2 are located on the 7th strip line layer LL1, and the second ground capacity C2 is located at the second electricity
Holding on layer GC2, the second strip line L2 and the second ground capacity C2 are connected by the second through hole Via2；
Third level parallel resonance unit includes the 3rd strip line L3, the 3rd ground capacity C3 and third through-hole
Via3, the 3rd strip line L3 are located on the 7th strip line layer LL1, and the 3rd ground capacity C3 is located at the 12nd
In capacitor layers GC3, the 3rd strip line L3 and the 3rd ground capacity C3 are connected by third through-hole Via3；
Fourth stage parallel resonance unit includes the 4th strip line L4, the 4th ground capacity C4 and fourth hole
Via4, the 4th strip line L4 are located on the 7th strip line layer LL1, and the 4th ground capacity C4 is located at the 4th electricity
Holding on layer GC4, the 4th strip line L4 and the 4th ground capacity C4 are connected by fourth hole Via4；
Input inductance Lin is located on the 7th strip line layer LL1, and input port P1 is by input inductance Lin even
Meeting the first strip line L1, outputting inductance Lout is located on the 7th strip line layer LL1, and output port P2 passes through
Outputting inductance Lout connects the 4th strip line L4, the first Z-shaped interstage coupling strip line Z1 and is located at the 6th banding
On line layer LZ2, the second Z-shaped interstage coupling strip line Z2 is located at the 8th strip line layer LZ2；
First strip line L1 and the 4th strip line L4 is one end and connects total ground wire other end open circuit, and connects
The connection end connecing total ground wire is identical, the second strip line L2 and the 3rd strip line L3 one end connect total ground wire another
End open circuit, and the connection end connecting total ground wire is identical, the first strip line L1 and the company of the 4th strip line L4
Connect total ground terminal direction in opposite direction with the total ground terminal of connection of the second strip line L2 and the 3rd strip line L3；
First Z-shaped interstage coupling strip line Z1 two ends are all connected with total ground wire, the second Z-shaped interstage coupling strip line
Z2 two ends are all connected with total ground wire.
Described a kind of UHF waveband micro microwave filter uses multilamellar LTCC technique to make.
Described first ground plane GND1, the 3rd ground plane GND2, the 5th ground plane GND3, the 9th ground plane
GND4, the 11st ground plane GND5 and the 13rd ground plane GND6 are all connected with total ground wire.
A kind of UHF waveband micro microwave filter described in the utility model, common owing to being employing multilamellar low temperature
Burning ceramic process realize, its low-temperature co-burning ceramic material and metallic pattern sinter at a temperature of about 900 DEG C and
Become, so having extreme high reliability and temperature stability, owing to structure uses 3 D stereo integrated and many
Layer foldable structure and outer surface metallic shield are grounded and encapsulate, so that volume significantly reduces.
The size of this utility model a kind of UHF waveband micro microwave filter is 2mm × 3mm × 1.5mm.Its property
Can as shown in Figures 2 and 3, the pass band width of microwave filter is 2.2GHz～2.4GHz, input port echo
Loss is better than 16dB, and output port insertion loss is better than 2dB.
Claims (3)
1. a UHF waveband micro microwave filter, it is characterised in that: include 13 laminar substrates, described
13 laminar substrates set gradually the first ground plane GND1, the second capacitor layers GC2, the 3rd ground plane from top to bottom
GND2, the 4th capacitor layers GC4, the 5th ground plane GND3, the 6th strip line layer LZ2, the 7th strip line layer
LL1, the 8th strip line layer LZ2, the 9th ground plane GND4, the tenth capacitor layers GC1, the 11st ground plane GND5,
12nd capacitor layers GC3 and the 13rd ground plane GND6；
Described 13 laminar substrates are provided with input port P1, the first input inductance Lin1, first order parallel resonance
Unit L1, Via1, C1, second level parallel resonance unit L2, Via2, C2, third level parallel resonance unit
L3, Via3, C3, fourth stage parallel resonance unit L4, Via4, C4, the first outputting inductance Lout1,
One Z-shaped interstage coupling strip line Z1, the second Z-shaped interstage coupling strip line Z2, total ground wire and output port P2；
First order parallel resonance unit includes the first strip line L1, the first ground capacity C1 and the first through hole
Via1, the first strip line L1 are located on the 7th strip line layer LL1, and the first ground capacity C1 is located at the tenth electricity
Holding on layer GC1, the first strip line L1 and the first ground capacity C1 are connected by the first through hole Via1；
Second level parallel resonance unit includes the second strip line L2, the second ground capacity C2 and the second through hole
Via2, the second strip line L2 are located on the 7th strip line layer LL1, and the second ground capacity C2 is located at the second electricity
Holding on layer GC2, the second strip line L2 and the second ground capacity C2 are connected by the second through hole Via2；
Third level parallel resonance unit includes the 3rd strip line L3, the 3rd ground capacity C3 and third through-hole
Via3, the 3rd strip line L3 are located on the 7th strip line layer LL1, and the 3rd ground capacity C3 is located at the 12nd
In capacitor layers GC3, the 3rd strip line L3 and the 3rd ground capacity C3 are connected by third through-hole Via3；
Fourth stage parallel resonance unit includes the 4th strip line L4, the 4th ground capacity C4 and fourth hole
Via4, the 4th strip line L4 are located on the 7th strip line layer LL1, and the 4th ground capacity C4 is located at the 4th electricity
Holding on layer GC4, the 4th strip line L4 and the 4th ground capacity C4 are connected by fourth hole Via4；
Input inductance Lin is located on the 7th strip line layer LL1, and input port P1 is by input inductance Lin even
Meeting the first strip line L1, outputting inductance Lout is located on the 7th strip line layer LL1, and output port P2 passes through
Outputting inductance Lout connects the 4th strip line L4, the first Z-shaped interstage coupling strip line Z1 and is located at the 6th banding
On line layer LZ2, the second Z-shaped interstage coupling strip line Z2 is located at the 8th strip line layer LZ2；
First strip line L1 and the 4th strip line L4 is one end and connects total ground wire other end open circuit, and connects
The connection end connecing total ground wire is identical, the second strip line L2 and the 3rd strip line L3 one end connect total ground wire another
End open circuit, and the connection end connecting total ground wire is identical, the first strip line L1 and the company of the 4th strip line L4
Connect total ground terminal direction in opposite direction with the total ground terminal of connection of the second strip line L2 and the 3rd strip line L3；
First Z-shaped interstage coupling strip line Z1 two ends are all connected with total ground wire, the second Z-shaped interstage coupling strip line
Z2 two ends are all connected with total ground wire.
2. a kind of UHF waveband micro microwave filter as claimed in claim 1, it is characterised in that: described
A kind of UHF waveband micro microwave filter uses multilamellar LTCC technique to make.
3. a kind of UHF waveband micro microwave filter as claimed in claim 1, it is characterised in that: described
First ground plane GND1, the 3rd ground plane GND2, the 5th ground plane GND3, the 9th ground plane GND4,
11 ground plane GND5 and the 13rd ground plane GND6 are all connected with total ground wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620328945.0U CN205564922U (en) | 2016-04-19 | 2016-04-19 | Miniature microwave filter of UHF wave band |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620328945.0U CN205564922U (en) | 2016-04-19 | 2016-04-19 | Miniature microwave filter of UHF wave band |
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| Publication Number | Publication Date |
|---|---|
| CN205564922U true CN205564922U (en) | 2016-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620328945.0U Withdrawn - After Issue CN205564922U (en) | 2016-04-19 | 2016-04-19 | Miniature microwave filter of UHF wave band |
Country Status (1)
| Country | Link |
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| CN (1) | CN205564922U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
-
2016
- 2016-04-19 CN CN201620328945.0U patent/CN205564922U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170517 Address after: building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000 Patentee after: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD. Address before: 200 School of electro-optic engineering, Nanjing University of Science and Technology, Xuanwu District, Xiaolingwei, Nanjing 210094, Jiangsu Co-patentee before: Chen Xiangzhi Patentee before: Dai Yongsheng |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160907 Effective date of abandoning: 20180925 |