CN104241747B - Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter - Google Patents
Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter Download PDFInfo
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- CN104241747B CN104241747B CN201410466925.5A CN201410466925A CN104241747B CN 104241747 B CN104241747 B CN 104241747B CN 201410466925 A CN201410466925 A CN 201410466925A CN 104241747 B CN104241747 B CN 104241747B
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Abstract
The invention discloses a miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter. The filter comprises a single-pole double-throw switch chip WKD102010040, a low-noise amplifier chip WFD022036-L12, a 50-ohm resistance input/output interface attached to the surface, a parallel resonance unit module of a strip line structure, and a broadside coupling strip line of a dual-spiral structure. The above-mentioned structures are all obtained through the multi-layer low-temperature cofired ceramics technology (LTCC technology). The filter has the advantages of being variable, capable of achieving phase reversal quadrature, low in insertion loss, easy to adjust, light in weight, small in size, high in reliability, good in electrical performance, high in temperature stability, low in cost, capable of being produced on a large scale and the like, and is suitable for occasions with strict requirements of communication, satellite communication and the like in corresponding millimeter wave frequency bands for the size, electrical performance, temperature stability and reliability, and suitable for corresponding systems.
Description
Technical field
The present invention relates to a kind of wave filter, the variable paraphase quadrature filtering of particularly a kind of miniature active microwave and millimeter wave i/q
Device.
Background technology
In recent years, with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance,
Low cost and miniaturization have become as the developing direction of microwave current/RF application, to the performance of microwave filter, size, can
All put forward higher requirement by property and cost.In some national defence tip device, present has been quite full using frequency range,
So the tip device such as satellite communication develops towards millimeter wave band, so microwave and millimeter wave band filter has become as this ripple
Section receive and transmitting branch in critical electronic part, describe this component capabilities refer mainly to indicate: passband operating frequency model
Enclose, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and time delay
Frequency characteristic, temperature stability, volume, weight, reliability etc..Bonder is always the important set in various microwave integrated circuits
Become part, because straightthrough port is different from the output of coupling aperture, therefore bonder is connected with wave filter, wave filter can be expanded
Range.
LTCC is a kind of Electronic Encapsulating Technology, using multi-layer ceramics technology, can be built in passive element
Inside medium substrate, active component can also be mounted on substrate surface simultaneously and make passive/active integrated functional module.
Ltcc technology is in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and motility and height
The aspects such as frequency performance all show many merits, it has also become the mainstream technology of passive integration.It has high q value, is easy to embedded nothing
Source device, thermal diffusivity is good, and reliability is high, high temperature resistant, rushes the advantages of shake, using ltcc technology, can be very good to process size
Little, high precision, tight type is good, and little microwave device is lost.Because ltcc technology has the integrated advantage of 3 D stereo, in Microwave Frequency
Section is widely used for manufacturing various microwave passive components, realizes the highly integrated of passive element.Lamination skill based on ltcc technique
Art, it is possible to achieve three-dimensionally integrated, so that various micro microwave filter has, size is little, lightweight, performance is excellent, reliability
Many advantages, such as high, batch production performance concordance is good and inexpensive, using its three-dimensionally integrated construction features, it is possible to achieve by carrying
The variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q that shape line is realized.
Traditional wave filter, such as microstrip filter, are typically implemented identical performance parameter, volume required would generally compare
Ltcc technique is realized much greater, thus the inferior position on engineer applied just highlights, situation about being realized using ltcc technique
Under, optimized performance can be realized in volume as little as possible.And, the wave filter adopting under conventional situation, just do not have
Friendship paraphase function, but realized by external orthogonal device and balun.
Content of the invention
It is an object of the invention to provide one kind realized by strip lines configuration can paraphase be orthogonal, small volume, lightweight, reliable
Property height, excellent electrical property, that structure is simple, high yield rate, batch concordance are good, low cost, temperature performance are stable is miniature active
Microwave and millimeter wave i/q variable paraphase orthogonal filter.
The technical scheme realizing the object of the invention is: a kind of variable paraphase quadrature filtering of miniature active microwave and millimeter wave i/q
Device, it is by single-pole double-throw switch (SPDT) chip wkd102010040, microwave and millimeter wave wave filter, the low noise amplifier chip
Wfd022036 l12, directional coupler composition.It is defeated that microwave and millimeter wave wave filter includes surface-pasted 50 ohmages first
Inbound port, surface-pasted 50 ohmage the second input ports, the first input inductance, the second input inductance, the first order are in parallel
Resonant element, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V are in parallel
Between resonant element, the 6th grade of parallel resonance unit, outputting inductance, z form class, coupling strip line, surface-pasted 50 ohmages are defeated
Exit port, parallel resonance units at different levels are formed by triple layer with shape line, and second layer strip line is vertically positioned on third layer strip line
Side, ground floor strip line is vertically positioned above second layer strip line, and first order parallel resonance unit is by the first banding of ground floor
Line, the second strip line of the second layer, the 3rd strip line of third layer, first micro- electric capacity are formed in parallel, second level parallel resonance list
Unit by the 4th strip line of ground floor, the 5th strip line of the second layer, the 6th strip line of third layer, second micro- electric capacity in parallel and
Become, third level parallel resonance unit by the 7th strip line of ground floor, the 8th strip line of the second layer, third layer the 9th banding
Line, the 3rd micro- electric capacity are formed in parallel, and fourth stage parallel resonance unit is carried by the tenth strip line of ground floor, the 11st of the second layer
Shape line, the 12nd strip line of third layer, the 4th micro- electric capacity are formed in parallel, and level V parallel resonance unit is by the tenth of ground floor the
Three strip lines, the 14th strip line of the second layer, the 15th strip line of third layer, the 5th micro- electric capacity are formed in parallel, the 6th grade
Parallel resonance unit by the 16th strip line of ground floor, the 17th strip line of the second layer, the 18th strip line of third layer,
6th micro- electric capacity is formed in parallel, and wherein, the first input inductance is connected with surface-pasted 50 ohmage first input port, the
Two input inductance are connected with surface-pasted 50 ohmage the second input ports, the second layer of first order parallel resonance unit
Second strip line and the first input inductance connection, the 3rd strip line of the third layer of first order parallel resonance unit and the second input
Inductance connection, the 17th strip line of the second layer of the 6th grade of parallel resonance unit is connected with outputting inductance, outputting inductance and table
50 ohmage output ports of face attachment connect, and between z form class, coupling strip line is located at below parallel resonance unit.Six grades
Parallel resonance unit is grounded respectively, and wherein first and third layer all strip line earth terminal are identical, and one end is micro- capacity earth, another
End open circuit, second layer strip line earth terminal is identical, and one end is grounded, and the other end is opened a way, and is grounded extreme direction and first and third layer of ground connection
End is contrary, and between z form class, coupling strip line two ends are all grounded.Directional coupler includes the input of surface-pasted 50 ohmage the 3rd
Port, the double-stranded broadside coupled striplines of the first matched line ground floor, the second matched line, surface-pasted 50 ohm of resistances
Anti- straight-through port, surface-pasted 50 ohmage coupling port, the 3rd matched line, the second layer are double-stranded broadside coupled
Strip line, the 4th matched line, surface-pasted 50 ohmage isolated ports, wherein, ground floor double-stranded broadside coupling
Close strip line and be vertically positioned above the double-stranded broadside coupled striplines of the second layer, the first matched line, second layer Double helix
The broadside coupled striplines of structure and the second matched line in same plane, the first matched line and surface-pasted 50 ohmages the
Three input ports connect, and the second matched line is connected with surface-pasted 50 ohmage straight-through ports, second layer double-spiral structure
Broadside coupled striplines left end be connected with the first matched line, the second layer double-stranded broadside coupled striplines right-hand member and
Two matched lines connect；3rd matched line, the double-stranded broadside coupled striplines of ground floor and the 4th matched line are same flat
Face, the 3rd matched line is connected with surface-pasted 50 ohmage coupling port, the 4th matched line with surface-pasted 50 ohm
Impedance isolated port connects, and ground floor double-stranded broadside coupled striplines left end is connected with the 3rd matched line, ground floor
Double-stranded broadside coupled striplines right-hand member is connected with the 4th matched line.Single-pole double-throw switch (SPDT) chip wkd102010040's
Rfout1 is connected with surface-pasted 50 ohmage first input port, rfout2 and surface-pasted 50 ohmages second
Input port connects.The in of the low noise amplifier chip wfd022036 l12 and surface-pasted 50 ohmage output ports
Connect, out is connected with surface-pasted 50 ohmage the 3rd input port.
Compared with prior art, because the present invention adopts low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, institute
The remarkable advantage bringing is: flat in (1) band；(2) variable and can paraphase orthogonal；(3) small volume, lightweight, reliability are high；
(4) excellent electrical property；(5) circuit realiration structure is simple, can achieve and produces in enormous quantities；(6) low cost；It is (7) easy to install and use,
Directly use and installed using full-automatic chip mounter and weld.
Brief description
Fig. 1 (a) is profile and the internal structure of the variable paraphase orthogonal filter of the miniature active microwave and millimeter wave i/q of the present invention
Schematic diagram；Fig. 1 (b) is microwave and millimeter wave in a kind of variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q of the present invention
The profile of wave filter and internal structure schematic diagram；Fig. 1 (c) is a kind of variable paraphase of miniature active microwave and millimeter wave i/q of the present invention
The profile of directional coupler and internal structure schematic diagram in orthogonal filter.
Fig. 2 be the miniature active microwave and millimeter wave i/q of the present invention can paraphase orthogonal filter outfan amplitude-versus-frequency curve.
Fig. 3 be the miniature active microwave and millimeter wave i/q of the present invention can paraphase orthogonal filter input/output port standing wave special
Linearity curve.
Fig. 4 be the miniature active microwave and millimeter wave i/q of the present invention can two input ports of paraphase orthogonal filter phase place special
Linearity curve.
Fig. 5 is that the miniature active microwave and millimeter wave i/q of the present invention can paraphase orthogonal filter straight-through port and coupling port
Phase characteristic curve.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described in further detail.
In conjunction with Fig. 1 (a) and (b), (c), a kind of variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q of the present invention,
The microwave and millimeter wave wave filter of this orthogonal filter includes surface-pasted 50 ohmage input ports (p1), surface-pasted
50 ohmages the second input port (p2), the first input inductance (lin1), the second input inductance (lin2), first order parallel connection are humorous
Shake unit (l11, l21, l31, c1), second level parallel resonance unit (l12, l22, l32, c2), third level parallel resonance unit
(l13, l23, l33, c3), fourth stage parallel resonance unit (l14, l24, l34, c4), level V parallel resonance unit (l15,
L25, l35, c5), between the 6th grade of parallel resonance unit (l16, l26, l36, c6), outputting inductance (lout), z form class couple banding
Line (z), surface-pasted 50 ohmage output ports (p3), parallel resonance units at different levels are formed by triple layer with shape line, the
Two layers of strip line are vertically positioned above third layer strip line, and ground floor strip line is vertically positioned above second layer strip line, and first
Level parallel resonance unit (l11, l21, l31, c1) the first strip line (l11) by ground floor, the second strip line of the second layer
(l21), the 3rd strip line (l31) of third layer, first micro- electric capacity (c1) are formed in parallel, second level parallel resonance unit (l12,
L22, l32, c2) by the 4th strip line (l12) of ground floor, the 5th strip line (l22) of the second layer, third layer the 6th banding
Line (l32), second micro- electric capacity (c2) are formed in parallel, and third level parallel resonance unit (l13, l23, l33, c3) is by the of ground floor
Seven strip lines (l13), the 8th strip line (l23) of the second layer, the 9th strip line (l33) of third layer, the 3rd micro- electric capacity (c3)
It is formed in parallel, fourth stage parallel resonance unit (l14, l24, l34, c4) is by the tenth strip line (l14) of ground floor, the second layer
11st strip line (l24), the 12nd strip line (l34) of third layer, the 4th micro- electric capacity (c4) are formed in parallel, and level V is in parallel
13rd strip line (l15) by ground floor for the resonant element (l15, l25, l35, c5), the 14th strip line of the second layer
(l25), the 15th strip line (l35) of third layer, the 5th micro- electric capacity (c5) are formed in parallel, the 6th grade of parallel resonance unit
(l16, l26, l36, c6) is by the 16th strip line (l16) of ground floor, the 17th strip line (l26) of the second layer, third layer
The 18th strip line (l36), the 6th micro- electric capacity (c6) be formed in parallel, wherein, the first input inductance (lin1) and surface mount
50 ohmage first input port (p1) connect, second input inductance (lin2) with surface-pasted 50 ohmages second
Input port (p2) connects, second strip line (l21) of the second layer of first order parallel resonance unit (l11, l21, l31, c1)
It is connected with the first input inductance (lin1), the 3rd banding of the third layer of first order parallel resonance unit (l11, l21, l31, c1)
Line (l31) is connected with the second input inductance (lin2), the second layer of the 6th grade of parallel resonance unit (l16, l26, l36, c6)
17th strip line (l26) is connected with outputting inductance (lout), and outputting inductance (lout) is defeated with surface-pasted 50 ohmages
Exit port (p3) connects, and between z form class, coupling strip line (z) is located at below parallel resonance unit.Six grades of parallel resonance units are divided
It is not grounded, wherein first and third layer all strip line earth terminal are identical, and one end is micro- capacity earth, the other end is opened a way, second layer band
Shape line earth terminal is identical, and one end is grounded, and the other end is opened a way, and it is contrary with first and third layer of earth terminal, between z form class to be grounded extreme direction
Coupling strip line (z) two ends are all grounded.Directional coupler include surface-pasted 50 ohmages the 3rd input port (p4),
One matched line (l1), the double-stranded broadside coupled striplines of ground floor (u1), the second matched line (l2), surface-pasted 50
Ohmage straight-through port (p5), surface-pasted 50 ohmage coupling port (p6), the 3rd matched line (l3), the second layer are double
The broadside coupled striplines (u2) of helical structure, the 4th matched line (l4), surface-pasted 50 ohmage isolated ports (p7),
Wherein, the double-stranded broadside coupled striplines of ground floor (u1) are vertically positioned at the double-stranded broadside coupled band of the second layer
Above shape line (u2), the first matched line (l1), the double-stranded broadside coupled striplines of the second layer (u2) and the second matched line
(l2) in same plane, the first matched line (l1) is connected with surface-pasted 50 ohmage the 3rd input port (p4), and second
Matched line (l2) is connected with surface-pasted 50 ohmage straight-through ports (p5), the double-stranded broadside coupled band of the second layer
Shape line (u2) left end is connected with the first matched line (l1), the second layer double-stranded broadside coupled striplines (u2) right-hand member and
Two matched lines (l2) connect；3rd matched line (l3), the double-stranded broadside coupled striplines of ground floor (u1) and the 4th
In same plane, the 3rd matched line (l3) is connected distribution (l4) with surface-pasted 50 ohmage coupling port (p6), and the 4th
Matched line (l4) is connected with surface-pasted 50 ohmage isolated ports (p7), the double-stranded broadside coupled band of ground floor
Shape line (u1) left end is connected with the 3rd matched line (l3), ground floor double-stranded broadside coupled striplines (u1) right-hand member and
Four matched lines (l4) connect.The rfout1 of single-pole double-throw switch (SPDT) chip wkd102010040 and surface-pasted 50 ohmages the
One input port (p1) connects, and rfout2 is connected with surface-pasted 50 ohmages the second input port (p2).Low noise is put
The in of big device chip wfd022036 l12 is connected with surface-pasted 50 ohmage output ports (p3), and out is pasted with surface
50 ohmage the 3rd input port (p4) of dress connects.
In conjunction with Fig. 1 (a) and (b), (c), including surface-pasted 50 ohmage input ports (p1, p2, p4), input electricity
Sense (lin1, lin2), first order parallel resonance unit (l11, l21, l31, c1), second level parallel resonance unit (l12, l22,
L32, c2), third level parallel resonance unit (l13, l23, l33, c3), fourth stage parallel resonance unit (l14, l24, l34,
C4), level V parallel resonance unit (l15, l25, l35, c5), the 6th grade of parallel resonance unit (l16, l26, l36, c6), defeated
Go out coupling strip line (z), the first matched line between inductance (lout), surface-pasted 50 ohmage output ports (p3), z form class
(l1), the double-stranded broadside coupled striplines of ground floor (u1), the second matched line (l2), surface-pasted 50 ohmages
Straight-through port (p5), surface-pasted 50 ohmage coupling port (p6), the 3rd matched line (l3), second layer double-spiral structure
Broadside coupled striplines (u2), the 4th matched line (l4), surface-pasted 50 ohmage isolated ports (p7) and ground connection
End is all realized using multilamellar LTCC technique.
A kind of miniature active microwave and millimeter wave i/q orthogonal filter, due to being real using multilamellar LTCC technique
Now, its low-temperature co-burning ceramic material and metallic pattern sinter at a temperature of about 900 DEG C and form, so having very high reliability
Property and temperature stability, because structure is using 3 D stereo is integrated and multilayer folding structure and outer surface metallic shield are realized connecing
Ground and encapsulation, so that volume significantly reduces.
A kind of size of the variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q of the present invention is one a size of
0.7mm × 0.7mm × 0.1mm single-pole double-throw switch (SPDT) chip and the microwave millimeter of an a size of 8.4mm × 3.2mm × 1.5mm
Ripple i/q can paraphase orthogonal filter be connected, and what following figure was shown is that miniature active microwave and millimeter wave i/q can paraphase orthogonal filter
Performance, in 2.7-2.9ghz, input port 1 and input port 2 phase contrast can fall passband frequency range at 173 degree about
Phase, coupling port can be orthogonal at 90 degree about with straight-through port phase place.
Wkd102010040 cake core is the voltage-controlled reflective single-pole double-throw switch (SPDT) chip of a filter with low insertion loss, micro- using 0.25
The GaAs pseudomorphic high electron mobility transistor technique of rice grid length is fabricated by, and this chip is connect by back metal via through holes
Ground.All chip products are all through 100% radio-frequency measurement.Wkd102010040 cake core is 0/-5v or 5v/0v power work,
Dc ~ 4ghz is inserted into being lost: 0.5db, isolation: 38db, input vswr: 1.2:1, output VSWR: 1.2:1, during switching
Between: 10ns.
Wfd022036 l12 cake core is the Low Noise Amplifier MMIC of function admirable, using the arsenic of 0.25 micron of grid length
Change gallium pseudomorphic high electron mobility transistor technique to be fabricated by, this chip is grounded by back metal via through holes.All chips
Product is all through 100% radio-frequency measurement.The frequency range of wfd022036 l12 cake core: 2.2 3.6ghz, noise coefficient:
1.2db, typical gains: 25db, 1 decibel of compression point output power: 12dbm, input vswr: 1.6:1, output VSWR:
1.85:1.
Because the variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q is exactly that a single-pole double throw is opened in simple terms
Close chip wkd102010040 add one active can paraphase orthogonal filter, therefore by active can paraphase orthogonal filter property
We can get the performance of the variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q.It is the amplitude-frequency spy of its outfan
Linearity curve Insertion Loss in free transmission range adds 0.5db, the phase place of two input port and straight-through port and coupling port
Degree of balance does not change.
Claims (2)
1. a kind of variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q it is characterised in that: include single-pole double-throw switch (SPDT)
Chip wkd102010040, microwave and millimeter wave wave filter, the low noise amplifier chip wfd022036 l12 and directional coupler
Composition；Microwave and millimeter wave wave filter includes surface-pasted 50 ohmage first input port (p1), surface-pasted 50 Europe
Nurse impedance second input port (p2), the first input inductance (lin1), the second input inductance (lin2), first order parallel resonance list
First (l11, l21, l31, c1), second level parallel resonance unit (l12, l22, l32, c2), third level parallel resonance unit (l13,
L23, l33, c3), fourth stage parallel resonance unit (l14, l24, l34, c4), level V parallel resonance unit (l15, l25,
L35, c5), coupling strip line between the 6th grade of parallel resonance unit (l16, l26, l36, c6), outputting inductance (lout), z form class
(z), surface-pasted 50 ohmage output ports (p3), parallel resonance units at different levels are formed by triple layer with shape line, and second
Layer strip line is vertically positioned above third layer strip line, and ground floor strip line is vertically positioned above second layer strip line, the first order
First strip line (l11) by ground floor for the parallel resonance unit (l11, l21, l31, c1), the second strip line of the second layer
(l21), the 3rd strip line (l31) of third layer, first micro- electric capacity (c1) are formed in parallel, second level parallel resonance unit (l12,
L22, l32, c2) by the 4th strip line (l12) of ground floor, the 5th strip line (l22) of the second layer, third layer the 6th banding
Line (l32), second micro- electric capacity (c2) are formed in parallel, and third level parallel resonance unit (l13, l23, l33, c3) is by the of ground floor
Seven strip lines (l13), the 8th strip line (l23) of the second layer, the 9th strip line (l33) of third layer, the 3rd micro- electric capacity (c3)
It is formed in parallel, fourth stage parallel resonance unit (l14, l24, l34, c4) is by the tenth strip line (l14) of ground floor, the second layer
11st strip line (l24), the 12nd strip line (l34) of third layer, the 4th micro- electric capacity (c4) are formed in parallel, and level V is in parallel
13rd strip line (l15) by ground floor for the resonant element (l15, l25, l35, c5), the 14th strip line of the second layer
(l25), the 15th strip line (l35) of third layer, the 5th micro- electric capacity (c5) are formed in parallel, the 6th grade of parallel resonance unit
(l16, l26, l36, c6) is by the 16th strip line (l16) of ground floor, the 17th strip line (l26) of the second layer, third layer
The 18th strip line (l36), the 6th micro- electric capacity (c6) be formed in parallel, wherein, the first input inductance (lin1) and surface mount
50 ohmage first input port (p1) connect, second input inductance (lin2) with surface-pasted 50 ohmages second
Input port (p2) connects, second strip line (l21) of the second layer of first order parallel resonance unit (l11, l21, l31, c1)
It is connected with the first input inductance (lin1), the 3rd banding of the third layer of first order parallel resonance unit (l11, l21, l31, c1)
Line (l31) is connected with the second input inductance (lin2), the second layer of the 6th grade of parallel resonance unit (l16, l26, l36, c6)
17th strip line (l26) is connected with outputting inductance (lout), and outputting inductance (lout) is defeated with surface-pasted 50 ohmages
Exit port (p3) connects, and between z form class, coupling strip line (z) is located at below parallel resonance unit；
Six grades of parallel resonance units are grounded respectively, and wherein first and third layer all strip line earth terminal are identical, and one end is that micro- electric capacity connects
Ground, the other end is opened a way, and second layer strip line earth terminal is identical, and one end is grounded, and the other end is opened a way, and be grounded extreme direction and first,
Three layers of earth terminal are contrary, and between z form class, coupling strip line (z) two ends are all grounded；
Directional coupler includes surface-pasted 50 ohmage the 3rd input port (p4), the first matched line (l1), ground floor
Double-stranded broadside coupled striplines (u1), the second matched line (l2), surface-pasted 50 ohmage straight-through ports
(p5), surface-pasted 50 ohmage coupling port (p6), the 3rd matched line (l3), the second layer double-stranded broadside coupling
Close strip line (u2), the 4th matched line (l4), surface-pasted 50 ohmage isolated ports (p7), wherein, the double spiral shell of ground floor
The broadside coupled striplines (u1) of rotation structure are vertically positioned above the double-stranded broadside coupled striplines of the second layer (u2), the
One matched line (l1), the double-stranded broadside coupled striplines of the second layer (u2) and the second matched line (l2) in same plane,
First matched line (l1) is connected with surface-pasted 50 ohmage the 3rd input port (p4), the second matched line (l2) and surface
50 ohmage straight-through ports (p5) of attachment connect, the second layer double-stranded broadside coupled striplines (u2) left end and the
One matched line (l1) connects, and the second layer double-stranded broadside coupled striplines (u2) right-hand member and the second matched line (l2) are even
Connect；3rd matched line (l3), the double-stranded broadside coupled striplines of ground floor (u1) and the 4th matched line (l4) are same
Plane, the 3rd matched line (l3) is connected with surface-pasted 50 ohmage coupling port (p6), the 4th matched line (l4) and table
Face attachment 50 ohmage isolated ports (p7) connect, ground floor double-stranded broadside coupled striplines (u1) left end with
3rd matched line (l3) connects, and ground floor double-stranded broadside coupled striplines (u1) right-hand member and the 4th matched line (l4) are even
Connect；The rfout1 of single-pole double-throw switch (SPDT) chip wkd102010040 and surface-pasted 50 ohmage first input port (p1)
Connect, rfout2 is connected with surface-pasted 50 ohmages the second input port (p2)；The low noise amplifier chip
The in of wfd022036 l12 is connected with surface-pasted 50 ohmage output ports (p3), out and surface-pasted 50 Europe
Nurse impedance the 3rd input port (p4) connects.
2. the variable paraphase orthogonal filter of miniature active microwave and millimeter wave i/q according to claim 1, surface-pasted 50
Ohmage input port (p1, p2, p4), input inductance (lin1, lin2), first order parallel resonance unit (l11, l21,
L31, c1), second level parallel resonance unit (l12, l22, l32, c2), third level parallel resonance unit (l13, l23, l33,
C3), fourth stage parallel resonance unit (l14, l24, l34, c4), level V parallel resonance unit (l15, l25, l35, c5),
Six grades of parallel resonance units (l16, l26, l36, c6), outputting inductance (lout), surface-pasted 50 ohmage output ports
(p3), coupling strip line (z), the first matched line (l1), the double-stranded broadside coupled striplines of ground floor between z form class
(u1), the second matched line (l2), surface-pasted 50 ohmage straight-through ports (p5), surface-pasted 50 ohmage couplings
Port (p6), the 3rd matched line (l3), the double-stranded broadside coupled striplines of the second layer (u2), the 4th matched line (l4),
Surface-pasted 50 ohmage isolated ports (p7) and earth terminal are all realized using multilamellar LTCC technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410466925.5A CN104241747B (en) | 2014-09-13 | 2014-09-13 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
Applications Claiming Priority (1)
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Inventor after: Dai Yongsheng Inventor after: Zhou Wei Inventor after: Yang Maoya Inventor after: Zhou Yanfang Inventor after: Xu Xinying Inventor before: Zhou Wei Inventor before: Yang Maoya Inventor before: Zhou Yanfang Inventor before: Xu Xinying Inventor before: Dai Yongsheng |
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Free format text: CORRECT: INVENTOR; FROM: ZHOU WEI YANG MAOYA ZHOU YANFANG XU XINYING DAI YONGSHENG TO: DAI YONGSHENG ZHOU WEI YANG MAOYA ZHOU YANFANG XU XINYING |
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