CN205542768U - Sip封装结构 - Google Patents
Sip封装结构 Download PDFInfo
- Publication number
- CN205542768U CN205542768U CN201620112194.9U CN201620112194U CN205542768U CN 205542768 U CN205542768 U CN 205542768U CN 201620112194 U CN201620112194 U CN 201620112194U CN 205542768 U CN205542768 U CN 205542768U
- Authority
- CN
- China
- Prior art keywords
- chip
- metal
- sip
- package structure
- metal leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001154 acute effect Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 8
- 150000002739 metals Chemical class 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000004021 metal welding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000005288 electromagnetic effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620112194.9U CN205542768U (zh) | 2016-02-03 | 2016-02-03 | Sip封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620112194.9U CN205542768U (zh) | 2016-02-03 | 2016-02-03 | Sip封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205542768U true CN205542768U (zh) | 2016-08-31 |
Family
ID=56775789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620112194.9U Active CN205542768U (zh) | 2016-02-03 | 2016-02-03 | Sip封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN205542768U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105552063A (zh) * | 2016-02-03 | 2016-05-04 | 深圳佰维存储科技有限公司 | Sip封装结构 |
CN111653552A (zh) * | 2020-06-16 | 2020-09-11 | 西安科技大学 | 一种具有高抗电磁脉冲干扰能力的四方扁平芯片封装结构 |
WO2021017895A1 (en) * | 2019-07-26 | 2021-02-04 | Nantong Tongfu Microelectronics Co., Ltd | Packaging structure and fabrication method thereof |
CN114373740A (zh) * | 2022-01-19 | 2022-04-19 | 中国电子科技集团公司第二十六研究所 | 电磁屏蔽封装结构、电子器件模组及其制作方法 |
-
2016
- 2016-02-03 CN CN201620112194.9U patent/CN205542768U/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105552063A (zh) * | 2016-02-03 | 2016-05-04 | 深圳佰维存储科技有限公司 | Sip封装结构 |
WO2021017895A1 (en) * | 2019-07-26 | 2021-02-04 | Nantong Tongfu Microelectronics Co., Ltd | Packaging structure and fabrication method thereof |
CN111653552A (zh) * | 2020-06-16 | 2020-09-11 | 西安科技大学 | 一种具有高抗电磁脉冲干扰能力的四方扁平芯片封装结构 |
CN111653552B (zh) * | 2020-06-16 | 2022-06-10 | 西安科技大学 | 一种具有高抗电磁脉冲干扰能力的四方扁平芯片封装结构 |
CN114373740A (zh) * | 2022-01-19 | 2022-04-19 | 中国电子科技集团公司第二十六研究所 | 电磁屏蔽封装结构、电子器件模组及其制作方法 |
CN114373740B (zh) * | 2022-01-19 | 2023-08-11 | 中国电子科技集团公司第二十六研究所 | 电磁屏蔽封装结构、电子器件模组及其制作方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10522475B2 (en) | Vertical interconnects for self shielded system in package (SiP) modules | |
US8766429B2 (en) | Semiconductor packages | |
US10062582B2 (en) | Fabrication method of package having ESD and EMI preventing functions | |
US8338928B2 (en) | Three-dimensional package structure | |
US8093690B2 (en) | Chip package and manufacturing method thereof | |
US8110902B2 (en) | Chip package and manufacturing method thereof | |
US11823911B2 (en) | Process of package-then-etch three-dimensional package structure electrically connected by plated copper pillars | |
CN205542768U (zh) | Sip封装结构 | |
US20120228751A1 (en) | Semiconductor package and method of manufacturing the same | |
US20060091517A1 (en) | Stacked semiconductor multi-chip package | |
TW201712838A (zh) | 自行屏蔽的系統級封裝模組 | |
US8633061B2 (en) | Method of fabricating package structure | |
US11588009B2 (en) | Semiconductor device having a lid configured as an enclosure and a capacitive structure and method of manufacturing a semiconductor device | |
TW201240056A (en) | Semiconductor package and fabrication method thereof | |
US20130093067A1 (en) | Wafer level applied rf shields | |
CN102969303A (zh) | 半导体封装结构及其制造方法 | |
KR101391089B1 (ko) | 반도체 패키지 및 그 제조방법 | |
CN105552063A (zh) | Sip封装结构 | |
US20140063742A1 (en) | Thermally Enhanced Electronic Component Packages with Through Mold Vias | |
CN205542767U (zh) | 抗电磁干扰的sip封装结构 | |
CN108807294B (zh) | 封装结构及其制法 | |
CN221466579U (zh) | 芯片封装结构 | |
CN216624270U (zh) | 半导体封装件以及电子器件 | |
US20170018487A1 (en) | Thermal enhancement for quad flat no lead (qfn) packages | |
US20100224981A1 (en) | Routable array metal integrated circuit package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: 518055, Guangdong, Nanshan District, Taoyuan Shenzhen street, with the rich industrial city, No. 4 factory building, 1 floor, 2 floor, 4 floor, 5 floor Patentee after: Shenzhen Bai dimensional storage Polytron Technologies Inc Address before: 518000, Guangdong, Nanshan District, Taoyuan Shenzhen street, with the rich industrial city, No. 4 factory building, 1 floor, 2 floor, 4 floor, 5 floor Patentee before: Biwin Storage Technology Limited |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 518055 floor 1-3 and floor 4, building 8, zone 2, Zhongguan honghualing Industrial South Zone, No. 1213, Liuxian Avenue, Pingshan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: BIWIN STORAGE TECHNOLOGY Co.,Ltd. Address before: 518055 1st floor, 2nd floor, 4th floor, 5th floor, No.4 factory building, tongfuyu industrial city, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: BIWIN STORAGE TECHNOLOGY Co.,Ltd. |