CN205508809U

CN205508809U - No copper bottom plate power semiconductor module

Info

Publication number: CN205508809U
Application number: CN201620283409.3U
Authority: CN
Inventors: 冯亚宁; 张意远
Original assignee: Shanghai Microsemi Semiconductor Co Ltd
Current assignee: Shanghai Microsemi Semiconductor Co Ltd
Priority date: 2016-04-07
Filing date: 2016-04-07
Publication date: 2016-08-24
Anticipated expiration: 2026-04-07

Abstract

The utility model discloses a no copper bottom plate power semiconductor module, it includes a DBC pottery copper metallization board and a casing, DBC pottery copper metallization board with the housing seal rigid coupling encloses the configuration and becomes a cavity. The utility model discloses a no copper bottom plate structure, and the central authorities of DBC pottery copper metallization board reserve has single screw hole, improves no copper bottom plate power semiconductor module's thermal diffusivity, reinforcing no copper bottom plate power semiconductor module's thermal stress resistance performance, reliability and stability.

Description

Power semiconductor modular without copper soleplate

Technical field

This utility model relates to a kind of semiconductor device, is specifically related to a kind of without copper soleplate power semiconductor mould Block.

Background technology

Ordinary power semiconductor module be different materials composition multiple structure, comprise chip, dielectric substrate and Heat-radiating substrates etc., are linked together by weld layer between them, the thermal coefficient of expansion of the most each material Obvious difference.The thermal coefficient of expansion of heat-radiating substrate (generally copper soleplate) has reached aluminium oxide ceramics and has covered cuprio More than the twice of plate, therefore for module Reflow Soldering production process, solder from melted high temperature cooling to room temperature During, not only can produce significant thermal stress at solder layer, and thermal stress can cause the deformation of copper soleplate Indent, with interior well-floor power model when being installed to radiator, base plate will be deposited with spreader surface In bigger gap, affect the heat radiation of module, thus cause the premature breakdown of module.

Solder layer bonding area between ceramic copper-clad base plate bottom side layers of copper and copper soleplate is big, the thermal stress of generation Also big, thus this solder layer is most easily generated fatigue crack, and during the use of module, along with module Temperature alternating and extend, the fatigue crack of extension constantly reduces bonding area, cause module heat transfer be obstructed, Make module be damaged, thus affect the reliability of power model.

Existing rectification module belongs to conventional structure, does not only exist foregoing weld layer heat exhaustion reliability Problem, and module volume is big, and heat dispersion and reliability the most still have room for promotion.

The technical problem that this utility model is poor with copper soleplate heat dispersion for original module, thermal stress is high, Improving original module, use without copper soleplate structure, the central authorities at DBC pottery copper clad plate are reserved with single Screw hole so that the thermal diffusivity of module is more preferably, thermal stress resistance performance is higher, reliability and stability more Good.

Utility model content

This utility model is in order to solve original power semiconductor modular without copper soleplate with copper soleplate heat dispersion Difference, technical problem that thermal stress is high, it is therefore intended that provide a kind of thermal diffusivity more preferably, reliability and stability more High power semiconductor modular without copper soleplate, this utility model uses without copper soleplate structure, at DBC pottery The central authorities of copper clad plate are reserved with single screw hole, are remarkably improved heat dispersion and thermal stress performance.

This utility model includes DBC pottery copper clad plate and a shell without copper soleplate power semiconductor modular Body, described DBC pottery copper clad plate and affixed the enclosing of described housing seal are configured to a cavity.

It is provided with, at the proximal edge of described DBC pottery copper clad plate, the some nailhead-shaped lead passing described housing, Described DBC pottery copper clad plate has a DBC ceramic layer and is laid on described DBC ceramic layer The layers of copper of some separation, described layers of copper is provided with chip, and described chip passes through to be connected with neighbouring layers of copper Sheet connects.

The central authorities of described DBC pottery copper clad plate are reserved with single screw hole, and described housing is the most also It is reserved with medium pore.

In described cavity, embedding has cavity encapsulating, and described housing has glue filling opening, is used for injecting described Cavity encapsulating.

Described DBC pottery copper clad plate is configured to by affixed the enclosing of adhesive seal with described housing Chamber.

The substrate of described DBC pottery copper clad plate is aluminium oxide or aluminium nitride substrate.

The inside of described housing dissipates symmetrically from central aperture edge and is designed with reinforcement.

Positive progressive effect of the present utility model:

Power semiconductor modular without copper soleplate of the present utility model uses without copper soleplate structure, applies at DBC pottery The central authorities of copper coin are reserved with single screw hole, improve the thermal diffusivity without copper soleplate power semiconductor modular, strengthen The thermal stress resistance performance of power semiconductor modular without copper soleplate, reliability and stability.

Accompanying drawing explanation

Fig. 1 is this utility model part sectioned view without copper soleplate power semiconductor modular；

Fig. 2 is this utility model top view without copper soleplate power semiconductor modular；

Fig. 3 is this utility model housing perspective view without copper soleplate power semiconductor modular；

Fig. 4 is this utility model to be shown without the DBC pottery copper clad plate structure of copper soleplate power semiconductor modular It is intended to.

Detailed description of the invention

Enumerate preferred embodiment below, and combine accompanying drawing and become apparent from intactly illustrating this utility model.

The purpose of this utility model is achieved through the following technical solutions:

As shown in Figure 1,2 and 3, a kind of without copper soleplate power semiconductor modular, including a DBC pottery Copper clad plate 1 and a housing 2, housing 2 is laid in above DBC pottery copper clad plate 1, the end of housing 2 End is fixedly linked by binding agent with DBC pottery copper clad plate 1 upper surface.DBC pottery copper clad plate 1 Proximal edge at be provided with the some nailhead-shaped lead 14 passing housing 2, DBC pottery copper clad plate 1 and shell Body 2 seals affixed enclosing and is configured to a cavity, and in cavity, embedding has cavity encapsulating, the encapsulating on housing 2 Hole 21 is used for injecting cavity encapsulating.The central authorities of DBC pottery copper clad plate are reserved with single screw hole 13, Housing 2 is the most also reserved with medium pore.

Housing 2 is internal dissipates design reinforcement symmetrically from center to edge, thus to whole DBC Ceramic copper-clad plate forms uniform pressure, forms good installation effect.

As shown in Figure 4, the substrate of DBC pottery copper clad plate 1 is aluminium oxide or aluminium nitride substrate, DBC Pottery copper clad plate 1 has a DBC ceramic layer and the some separation being laid on DBC ceramic coat Layers of copper 15, layers of copper 15 is provided with chip 11, chip 11 with neighbouring layers of copper 15 by being connected sheet 12 Connect, the chip 11 on DBC pottery copper clad plate 1, connection sheet 12, and nailhead-shaped lead 14 uses The compression joint type welding in mould fixed position.Chip 11 sets in dispersion on DBC pottery copper clad plate 1 Put the radiating effect increasing DBC pottery copper clad plate 1.

DBC pottery copper clad plate 1 carries out upwards pre-bending and processes, deposited to offset DBC pottery in welding process The indent that copper coin 1 is formed because of thermal stress, then carries out electricity to the lower surface of DBC pottery copper clad plate 1 Plating, electroplates prioritizing selection nickel coating, it is to avoid the problem of oxidation of the rear operation such as welding.DBC pottery Copper clad plate 1 is made with circuit wiring board figure previously according to circuit design, and applies copper at DBC pottery The central authorities of plate 1 are reserved with single screw hole 13, chip 11 on DBC pottery copper clad plate in scattering device Increase the radiating effect of DBC pottery copper clad plate 1.

Above-described embodiment is not intended that restriction of the present utility model, all employing equivalents or equivalent transformation The technical scheme that form is obtained, within all falling within protection domain of the present utility model.

Claims

1. one kind without copper soleplate power semiconductor modular, it is characterised in that: described power semiconductor modular without copper soleplate includes that DBC pottery copper clad plate and a housing, described DBC pottery copper clad plate and affixed the enclosing of described housing seal are configured to a cavity；

It is provided with, at the proximal edge of described DBC pottery copper clad plate, the some nailhead-shaped lead passing described housing, described DBC pottery copper clad plate has a DBC ceramic layer and the layers of copper of the some separation being laid on described DBC ceramic coat, described layers of copper is provided with chip, and described chip connects by being connected sheet with neighbouring layers of copper.

2. as claimed in claim 1 without copper soleplate power semiconductor modular, it is characterised in that: the central authorities of described DBC pottery copper clad plate are reserved with single screw hole, and described housing is the most also reserved with medium pore.

3. as claimed in claim 1 without copper soleplate power semiconductor modular, it is characterised in that: in described cavity, embedding has cavity encapsulating, and described housing has glue filling opening, is used for injecting described cavity encapsulating.

4. as claimed in claim 1 without copper soleplate power semiconductor modular, it is characterised in that: described DBC pottery copper clad plate is configured to a cavity with described housing by affixed the enclosing of adhesive seal.

5. as claimed in claim 1 without copper soleplate power semiconductor modular, it is characterised in that: the substrate of described DBC pottery copper clad plate is aluminium oxide or aluminium nitride substrate.

6. as claimed in claim 1 without copper soleplate power semiconductor modular, it is characterised in that: the inside of described housing dissipates symmetrically from central aperture edge and is designed with reinforcement.