CN205211734U - Silicon microchannel heat dissipation gaN microwave power device - Google Patents
Silicon microchannel heat dissipation gaN microwave power device Download PDFInfo
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- CN205211734U CN205211734U CN201521108274.9U CN201521108274U CN205211734U CN 205211734 U CN205211734 U CN 205211734U CN 201521108274 U CN201521108274 U CN 201521108274U CN 205211734 U CN205211734 U CN 205211734U
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Abstract
The utility model relates to a silicon microchannel heat dissipation gaN microwave power device, including gaN microwave power device body, si microchannel radiator and solder layer, wherein a plurality of microchannels have been seted up to the bottom of si microchannel radiator, and the surface bonding of a plurality of microchannels is kept away from to gaN microwave power device body through solder layer and si microchannel radiator. The utility model discloses the structure letter is little, and the radiating efficiency is high.
Description
Technical field
The utility model relates to microwave field effect transnistor and solid-state power amplifier field, particularly relates to silicon micro-channel heat radiation GaN microwave power device.
Background technology
GaN material has character and the strong Radiation hardness such as wide direct band gap, strong atomic bond, high thermal conductivity, chemical stability be good, has a wide range of applications in fields such as photoelectron, high temperature high power device and high-frequency microwave devices.
GaN primary growth is in SiC, sapphire and Si substrate, and in SiC substrate, extension GaN occupies dominant position because its epitaxial material quality is good, substrate thermal conductivity is high in high-end microwave power application.
GaN microwave power device power density is greatly its Core Superiority, but in actual applications, the direct current power conversion efficiency of GaN microwave power device is about 50%, has a large amount of direct current power and is converted to heat energy, needs to dissipate away in time.
As everyone knows, current GaN device material therefor is all adopt the mode of heteroepitaxial growth, and the epitaxial material crystal mass that this kind of mode grows exists more defect, makes GaN microwave power device there is larger robustness hidden danger.If the heat energy that GaN microwave power device operationally produces can not dissipate away in time, junction temperature will be caused to rise fast, reduce device performance and working life, time serious, can directly cause device to burn.
GaN device heat management is mainly considered from following two dimensions: one, reduce the thermal resistance heat dissipation path, makes heat can fast transport; Two, adopt relative radiator technology in hot interface, take heat away in time.The conventional heat dissipation technology in the solid-state power amplifier fields such as cold drawing the most frequently used at present, air-cooled, liquid cooling is all the radiating modes adopted from second angle, is also conventional method during GaN microwave power device practical application instantly.This conventional method mainly contains following weak point:
1. the method detaches heat in time based at final heat dissipation interface, cannot change the entire thermal resistance of heat dissipation path, once thermal resistance is excessive in heat dissipation path, this kind of radiating mode will produce little effect.
2. the radiating mode that the method adopts often has larger volume and weight, limits the Miniaturization Design of electronic system.
Utility model content
The technical problem that the utility model mainly solves is to provide a kind of silicon micro-channel heat radiation GaN microwave power device, shortens device heat radiation total path, reduces device entire thermal resistance, the heat-sinking capability of boost device.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: provide a kind of silicon micro-channel heat radiation GaN microwave power device, comprise GaN microwave power device body, Si microchannel heat sink and solder layer, offer multiple microchannel bottom described Si microchannel heat sink, described GaN microwave power device body is bonding away from the surface of microchannel with described Si microchannel heat sink by described solder layer.
Especially, the shape of described microchannel is rectangle, triangle or circle.
Especially, described Si microchannel heat sink also comprises cover plate, and described cover plate is positioned at bottom radiator and airtight described multiple microchannel.
Especially, described Si microchannel heat sink is identical with the size of the gluing of surfaces of described GaN microwave power device body.
Especially, described GaN microwave power device body has SiC substrate, and described SiC substrate is bonding away from the surface of described microchannel with described Si microchannel heat sink by described solder layer.
The beneficial effects of the utility model are: 1) under GaN microwave power device substrate, introduce microchannel radiator structure immediately, shorten heat dissipation path, reduce entire thermal resistance; 2) more miniaturized, the lightweight of radiator structure, micro channel heat exchange efficiency is higher, builds complicated cooling system, save cost when can save subsequent applications; 3) Si microchannel heat sink can accomplish very little size, matches with GaN microwave power device; 4) effectively promote the performance of GaN power device, reliability and life-span, contribute to the application of GaN microwave power device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment silicon micro-channel heat radiation GaN microwave power device.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only a part of embodiment of the present utility model, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
See Fig. 1, a kind of silicon micro-channel heat radiation GaN microwave power device, comprises GaN microwave power device body 1, Si microchannel heat sink 2 and solder layer 3; Offer multiple microchannel 21 bottom described Si microchannel heat sink 2, described solder layer is AuSn metal level; Described GaN microwave power device body is bonding away from the surface of microchannel 21 with described Si microchannel heat sink 2 by described AuSn metal level.
In the present embodiment, described microchannel shape is rectangle, and certainly, according to actual conditions, described microchannel shape also can be set to triangle or circle.
Described Si microchannel heat sink 2 also comprises cover plate 22, and described cover plate is positioned at bottom radiator and airtight described multiple microchannel 21.
Described Si microchannel heat sink 2 is identical with the size of the gluing of surfaces of described GaN microwave power device body 1.
Described GaN microwave power device body has SiC substrate, and described SiC substrate is bonding away from the surface of described microchannel with described Si microchannel heat sink by described AuSn metal level.
The foregoing is only embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (6)
1. silicon micro-channel heat radiation GaN microwave power device, it is characterized in that, comprise GaN microwave power device body, Si microchannel heat sink and solder layer, the bottom of described Si microchannel heat sink offers multiple microchannel, and described GaN microwave power device body is bonding away from the surface of described multiple microchannel with described Si microchannel heat sink by described solder layer.
2. silicon micro-channel heat radiation GaN microwave power device according to claim 1, it is characterized in that, the shape of described multiple microchannel is rectangle, triangle or circle.
3. silicon micro-channel heat radiation GaN microwave power device according to claim 1 and 2, it is characterized in that, described Si microchannel heat sink also comprises cover plate, and described cover plate is fitted in bottom described Si microchannel heat sink and airtight described multiple microchannel.
4. silicon micro-channel heat radiation GaN microwave power device according to claim 1 and 2, it is characterized in that, described Si microchannel heat sink is identical with the size of the gluing of surfaces of described GaN microwave power device body.
5. silicon micro-channel heat radiation GaN microwave power device according to claim 1, it is characterized in that, described solder layer is AuSn metal level.
6. silicon micro-channel heat radiation GaN microwave power device according to claim 1, it is characterized in that, described GaN microwave power device body has SiC substrate, and described SiC substrate is bonding away from the surface of described multiple microchannel with described Si microchannel heat sink by described solder layer.
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| CN201521108274.9U CN205211734U (en) | 2015-12-25 | 2015-12-25 | Silicon microchannel heat dissipation gaN microwave power device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106571307A (en) * | 2016-10-08 | 2017-04-19 | 中国电子科技集团公司第五十五研究所 | Preparation method of microchannel heat sink for high-heat flux heat dissipation |
| CN107275299A (en) * | 2017-05-26 | 2017-10-20 | 北京大学 | A kind of micro-channel heat exchanger and preparation method thereof |
| CN108133916A (en) * | 2017-12-25 | 2018-06-08 | 中国电子科技集团公司第五十四研究所 | A kind of microchannel heat sink welding structure and technique |
| CN108172556A (en) * | 2017-12-24 | 2018-06-15 | 中国电子科技集团公司第五十五研究所 | Miniflow heat dissipation gallium nitride transistor and its manufacturing method in piece based on atomistic binding |
| CN108198793A (en) * | 2017-12-24 | 2018-06-22 | 中国电子科技集团公司第五十五研究所 | It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method |
| CN109121282A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of plate body radiator structure and preparation method thereof |
| CN113594111A (en) * | 2021-07-08 | 2021-11-02 | 哈工大机器人(中山)无人装备与人工智能研究院 | Gallium nitride power device with in-chip array micro-flow column heat dissipation structure and manufacturing method |
-
2015
- 2015-12-25 CN CN201521108274.9U patent/CN205211734U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106571307A (en) * | 2016-10-08 | 2017-04-19 | 中国电子科技集团公司第五十五研究所 | Preparation method of microchannel heat sink for high-heat flux heat dissipation |
| CN107275299A (en) * | 2017-05-26 | 2017-10-20 | 北京大学 | A kind of micro-channel heat exchanger and preparation method thereof |
| CN107275299B (en) * | 2017-05-26 | 2019-08-20 | 北京大学 | A kind of micro-channel heat exchanger and preparation method thereof |
| CN108172556A (en) * | 2017-12-24 | 2018-06-15 | 中国电子科技集团公司第五十五研究所 | Miniflow heat dissipation gallium nitride transistor and its manufacturing method in piece based on atomistic binding |
| CN108198793A (en) * | 2017-12-24 | 2018-06-22 | 中国电子科技集团公司第五十五研究所 | It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method |
| CN108133916A (en) * | 2017-12-25 | 2018-06-08 | 中国电子科技集团公司第五十四研究所 | A kind of microchannel heat sink welding structure and technique |
| CN109121282A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of plate body radiator structure and preparation method thereof |
| CN113594111A (en) * | 2021-07-08 | 2021-11-02 | 哈工大机器人(中山)无人装备与人工智能研究院 | Gallium nitride power device with in-chip array micro-flow column heat dissipation structure and manufacturing method |
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