CN205039161U - InGaN solar cell - Google Patents
InGaN solar cell Download PDFInfo
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- CN205039161U CN205039161U CN201520835291.6U CN201520835291U CN205039161U CN 205039161 U CN205039161 U CN 205039161U CN 201520835291 U CN201520835291 U CN 201520835291U CN 205039161 U CN205039161 U CN 205039161U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses an inGaN solar cell, including substrate, gaN buffer layer, n -GaN layer, n -InGaN layer and p -GaN layer, its characterized in that: the n -InGaN layer with there are i -InxGa1 -xN layer, p -InyGa1 -yN layer between the p -GaN layer in proper order, there is translucent electric current extension layer above the p -GaN layer, has the positive electrode on the translucent electric current extension layer, there is the negative electrode on the n -GaN layer. The utility model has the advantages of: reduce the thickness on inGaN layer, improved the quality on inGaN layer to a certain extent, introduce i -InxGa1 -xN layer and p -InyGa1 -yN layer, improved photoelectric conversion efficiency, easily the preparation, through translucent electric current extension layer and just, the setting of negative electrode, has realized the direct of complete solar battery and has used to further improve the radioresistance ability, prolonged the life of battery.
Description
Technical field
The utility model relates to a kind of solar cell, is specifically related to a kind of InGaN solar cell.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof are large with its energy gap, spectral region is wide (covering from ultraviolet to infrared full-wave section), heat-resisting quantity and good corrosion resistance, in optoelectronics and microelectronics domain, have huge using value.Current research finds, the room temperature energy gap of InN material is defined as present 0.7eV by 1.89eV before, the band gap of the ternary alloy three-partalloy InGaN made regulates near infrared spectrum region continuously to ultraviolet spectral region, and the absorption coefficient of nitride alloy near band edge is up to 10
5cm
-1magnitude, InGaN absorbed layer is made to absorb most incident light in hundreds of nanometer range, the InGaN Alloy Heterojunction structure of different I n component can be utilized in theory, design a more piece solar cell, realize the needs meeting efficient solar cell under an epitaxial system.In addition, InGaN alloy has good capability of resistance to radiation, is applicable to very much as space solar cell material.Therefore, InGaN has the advantage being obviously better than other semi-conducting materials in area of solar cell.But due to InGaN quality of material grown problem, make the efficiency of solar cell all very low, cost compare is high, and result of use is not good, and practicality is not strong.
Utility model content
For the deficiency that prior art exists, the utility model object is to provide a kind of InGaN solar cell, and structure is simple, and cost is low, and conversion efficiency is high.
To achieve these goals, the utility model realizes by the following technical solutions: a kind of InGaN solar cell, comprise substrate, GaN resilient coating, n-GaN layer, n-InGaN layer and p-GaN layer, it is characterized in that: between described n-InGaN layer and described p-GaN layer, have i-InxGa successively
1-xN layer, p-InyGa
1-yN layer, has translucent current extending above described p-GaN layer, and translucent current extending has positive electrode, and described n-GaN layer has negative electrode.
As preferably, described n-InGaN layer is 170nm.
Compared with prior art, the utility model has the advantage of: the thickness decreasing InGaN layer, improve the quality of InGaN layer to a certain extent; Introduce i-InxGa
1-xN layer and p-InyGa
1-yN layer, improves photoelectric conversion efficiency, is easy to preparation; By the setting of translucent current extending and positive and negative electrode, achieve the direct application of complete solar cell, and further increase capability of resistance to radiation, extend the useful life of battery.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In Fig. 1: 1 represents positive electrode, 2 represent translucent current extending, and 3 represent p-GaN layer, and 4 represent p-InyGa
1-yN layer, 5 represent i-InxGa
1-xN layer, 6 represent n-InGaN layer, and 7 represent negative electrode, and 8 represent n-GaN layer, and 9 represent GaN resilient coating, and 10 represent substrate.
Embodiment
Below in conjunction with accompanying drawing embodiment, the utility model is described in further detail.
As shown in Figure 1, this InGaN solar cell, comprises substrate 10, GaN resilient coating 9, n-GaN layer 8, n-InGaN layer 6 and p-GaN layer 3, it is characterized in that: have i-InxGa successively between described n-InGaN layer 6 and described p-GaN layer 3
1-xN layer 5, p-InyGa
1-yN layer 4, described p-GaN layer 3 has translucent current extending 2 above, translucent current extending 2 has positive electrode 1, described n-GaN layer 8 has negative electrode 7.
Wherein, n-InGaN layer 6 is 170nm, decreases the thickness of InGaN layer, improves the quality of InGaN layer to a certain extent.
Negative electricity is followed successively by Ti/Pd/Au very from bottom to top.By the setting of translucent current extending, achieve the direct application of complete solar cell, and further increase capability of resistance to radiation, extend the useful life of battery.
Claims (2)
1. an InGaN solar cell, comprises substrate, GaN resilient coating, n-GaN layer, n-InGaN layer and p-GaN layer, it is characterized in that: have i-InxGa successively between described n-InGaN layer and described p-GaN layer
1-xN layer, p-InyGa
1-yN layer, has translucent current extending above described p-GaN layer, and translucent current extending has positive electrode, and described n-GaN layer has negative electrode.
2. a kind of InGaN solar cell according to claim 1, is characterized in that: described n-InGaN layer is 170nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520835291.6U CN205039161U (en) | 2015-10-26 | 2015-10-26 | InGaN solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520835291.6U CN205039161U (en) | 2015-10-26 | 2015-10-26 | InGaN solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205039161U true CN205039161U (en) | 2016-02-17 |
Family
ID=55298035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520835291.6U Expired - Fee Related CN205039161U (en) | 2015-10-26 | 2015-10-26 | InGaN solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN205039161U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428448A (en) * | 2015-09-29 | 2016-03-23 | 北京大学 | Solar cell in bi-component gradual change structure, and preparation method for solar cell |
| CN106298990A (en) * | 2016-10-27 | 2017-01-04 | 东南大学 | A kind of nonpolar solaode utilizing spontaneous polarization electric field |
-
2015
- 2015-10-26 CN CN201520835291.6U patent/CN205039161U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428448A (en) * | 2015-09-29 | 2016-03-23 | 北京大学 | Solar cell in bi-component gradual change structure, and preparation method for solar cell |
| CN105428448B (en) * | 2015-09-29 | 2018-06-08 | 北京大学 | A kind of bi-component grading structure solar cell and preparation method thereof |
| CN106298990A (en) * | 2016-10-27 | 2017-01-04 | 东南大学 | A kind of nonpolar solaode utilizing spontaneous polarization electric field |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160217 Termination date: 20161026 |