CN204885113U - Wafer cleaning brush and wafer belt cleaning device - Google Patents
Wafer cleaning brush and wafer belt cleaning device Download PDFInfo
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- CN204885113U CN204885113U CN201520683856.3U CN201520683856U CN204885113U CN 204885113 U CN204885113 U CN 204885113U CN 201520683856 U CN201520683856 U CN 201520683856U CN 204885113 U CN204885113 U CN 204885113U
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Abstract
The utility model provides a wafer cleaning brush and wafer belt cleaning device, the wafer cleaning brush includes the sleeve and sets up a plurality of bump structures on sleeve peripheral surface, sleeve peripheral surface includes along the telescopic axle to the first region and the second area that distribute, first region and second area lie in the both sides in telescopic middle part and first region respectively, wherein, the first region density of bump structure inside the country is less than the density of second area convexity dot structure. The utility model discloses a with the first region inside the country the density of bump structure set up to being less than the bump structure density in the second area, avoided warping the excessive problem of wasing of central zone that leads to the wafer because of sleeve middle part. First region bump structure inside the country is including crisscross first bump structure and second bump structure of arranging, the height that highly is less than second bump structure of first bump structure, the washing frequency that has further reduced the central zone of wafer with wash intensity, guaranteed the yield of wafer.
Description
Technical field
The utility model relates to semiconductor applications, particularly a kind of wafer cleaning brush and wafer cleaning device.
Background technology
Along with the develop rapidly of integrated circuit (being called for short IC) manufacturing technology, the characteristic size (CD) of integrated circuit constantly reduces, and on a slice semiconductor crystal wafer, the quantity of semiconductor device constantly increases.In order to meet the requirement of semiconductor device increasing number, a slice semiconductor crystal wafer often comprises the semiconductor device of sandwich construction, and the semiconductor device of adjacent layer realizes electrical connection by metal interconnect structure, thus semiconductor device quantity is increased on the chip of particular area, improve the integrated level of semiconductor device.
In multilevel semiconductor device fabrication process, need to deposit different material layers on a semiconductor substrate, and by cmp (ChemicalMechanicalpolishing, etc. CMP) flatening process removes the material layer of segment thickness, while controlling each layer thickness, improve the surface smoothness of each material layer, and then improve the performance of semiconductor device of follow-up formation.And often clean semiconductor crystal wafer by brush after cmp, the grinding formed at semiconductor wafer surface to remove CMP remains.
Fig. 1 to Fig. 3 is existing wafer cleaning brush, some bump structures 13 that described wafer cleaning brush comprises roller bearing 11, is sheathed on the sleeve 12 on roller bearing 11 and is arranged on sleeve 12 outer surface; Described bump structure 13 is for serving as bristle, and the shape of each bump structure 13 is cylindrical structure as shown in Figure 4.Before wafer cleaning, as illustrated in Figures 5 and 6, described wafer cleaning brush is fixed on the top of a wafer 20, and makes the center of circle of axis projections through wafer 20 of described sleeve 12; During wafer cleaning, described roller bearing 11 is with moving sleeve 12 to rotate under the driving of motor, and in rotary course, described bump structure 13 can compress crystal column surface and forms contact friction with crystal column surface thus realize cleaning.
But, inventor finds, in cleaning process, described sleeve 12 meeting stress deformation, and can be bent downwardly during the distortion of the middle part of described sleeve 12, make the supermedial bump structure 13 of sleeve 12 be permanently connected to the central area of wafer, cause the central area problem of frequent clean wafer, and then there is the problem such as scratch, corrosion in the central area that result in wafer, reduces the yield of wafer because of frequent clean.
Utility model content
The purpose of this utility model is to provide a kind of wafer cleaning brush and wafer cleaning device, with problems such as the scratch avoiding the central area of wafer to cause because of frequent clean, corrosion, improves wafer yield.
For solving the problems of the technologies described above, the utility model provides a kind of wafer cleaning brush, comprise sleeve and be arranged at the some bump structures on described sleeve outer surface, described sleeve outer surface comprises first area along described sleeve axial distribution and second area, described first area is positioned at the middle part of described sleeve, described second area is positioned at the both sides of described first area, and wherein, the density of described first area bumps structure is less than the density of described second area bumps structure.
Optionally, in described wafer cleaning brush, the density of described first area bumps structure is 25% ~ 75% of the density of described second area bumps structure.
Optionally, in described wafer cleaning brush, described bump structure comprises the polycrystalline substance be fixed on described sleeve outer surface and the top structure be arranged on described polycrystalline substance, wherein, the top structure of described first area bumps structure and the area of wafer contacts are less than the described top structure of second area bumps structure and the area of wafer contacts.
Optionally, in described wafer cleaning brush, the top structure of described first area bumps structure and the area of wafer contacts are 40% ~ 80% of the described top structure of second area bumps structure and the area of wafer contacts.
Optionally, in described wafer cleaning brush, described top is hemisphere jut, and described polycrystalline substance is round platform, terrace with edge, prism, cylinder or cylindroid structure.
Optionally, in described wafer cleaning brush, the bump structure in described first area comprises the first staggered bump structure and the second bump structure, and the height of described first bump structure is less than the height of described second bump structure.
Optionally, in described wafer cleaning brush, the height of the bump structure in described second area is equal, and the average height of the bump structure in described first area equals the height of the bump structure in described second area.
Optionally, in described wafer cleaning brush, described in the aspect ratio of described first bump structure, the height of second area bumps structure is little 2 ~ 5 millimeters, large 2 ~ 5 millimeters of the height of second area bumps structure described in the aspect ratio of described second bump structure.
Optionally, in described wafer cleaning brush, the height of described second area bumps structure is 10 ~ 15 millimeters.
In addition, the utility model additionally provides a kind of wafer cleaning device, and comprise roller bearing and the wafer cleaning brush as above described in any one, described wafer cleaning brush is sheathed on described roller bearing, and carries out rolling cleaning to crystal column surface under the driving of described roller bearing.
In sum, wafer cleaning brush of the present utility model and wafer cleaning device have following beneficial effect:
The first, wafer cleaning brush of the present utility model is by being set to the density of first area bumps structure the density being less than second area bumps structure, avoid and to make to be arranged in first area bumps structure in the middle part of sleeve because of sleeve stress deformation in cleaning process, all the time contact crystal circle center region and cause crystal circle center's region frequent clean problem, ensure that wafer yield;
The second, wafer cleaning brush of the present utility model is by means of only the density reducing the bump structure contacted with crystal circle center region, avoids crystal circle center's region frequent clean problem, arranges convenience, easy to implement;
Three, wafer cleaning brush of the present utility model is set to be less than the top structure of second area bumps structure and the area of wafer contacts further by by the top structure of first area bumps structure and the area of wafer contacts again, the contact area of the bump structure contacted with crystal circle center region can be reduced, thus reduce the cleaning frequency in crystal circle center region, guarantee wafer yield further;
4th, wafer cleaning brush of the present utility model is also by being set to the bump structure in first area comprise the first staggered bump structure and the second bump structure, wherein, the height of described first bump structure is less than the height of the second bump structure, the contact-making surface area of the bump structure contacted with crystal circle center region can be reduced, thus the contact that reduction crystal circle center region is subject to, and then the contact friction force that reduction crystal circle center region is subject to, reduce the cleaning strength in crystal circle center region thus, avoid the scratch that crystal circle center region causes because of excessive by cleaning strength, the problems such as corrosion, guarantee wafer yield further.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing wafer cleaning brush;
Fig. 2 is the schematic front view of the wafer cleaning brush shown in Fig. 1;
Fig. 3 is the schematic side view of the wafer cleaning brush shown in Fig. 2;
Fig. 4 is the perspective view of existing bump structure;
Fig. 5 is structural representation during wafer cleaning brush cleaning wafer shown in Fig. 1;
Fig. 6 is the axis cross-sectional schematic of the wafer cleaning brush shown in Fig. 5;
Fig. 7 is the perspective view of the wafer cleaning brush of the utility model embodiment one;
Fig. 8 is the schematic front view of the wafer cleaning brush shown in Fig. 7;
Fig. 9 is the plane distribution schematic diagram of bump structure on sleeve outer surface of the utility model embodiment one;
Figure 10 is the perspective view of the bump structure of the utility model embodiment one;
Figure 11 is the perspective view of another bump structure of the utility model embodiment one;
Figure 12 is the structural representation when bump structure shown in Figure 11 contacts with crystal column surface;
Figure 13 is the part-structure schematic diagram of bump structure on sleeve outer surface of the utility model embodiment two.
Embodiment
In the wafer cleaning brush that the utility model provides and wafer cleaning device, described wafer cleaning brush comprises sleeve and is arranged at the some bump structures on described sleeve outer surface, described sleeve outer surface comprises first area along described sleeve axial distribution and second area, described first area is positioned at the middle part of described sleeve, described second area is positioned at the both sides of described first area, wherein, the density of described first area bumps structure is less than the density of described second area bumps structure.Described wafer cleaning brush is by being set to the density of first area bumps structure the density being less than second area bumps structure.Wafer cleaning brush of the present utility model is by being set to the density being less than described second area bumps structure by the density of first area bumps structure, avoid the first area bumps structure making because of sleeve stress deformation to be positioned in the middle part of sleeve, in cleaning process, contact crystal circle center region all the time and cause crystal circle center's region frequent clean problem, ensure that wafer yield; And by means of only reducing the density of the bump structure contacted with crystal circle center region, convenience is set, easy to implement.
For making advantage of the present utility model and feature clearly, below in conjunction with accompanying drawing 7 to 13, the wafer cleaning brush that the utility model proposes and wafer cleaning device are described in further detail.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
[embodiment one]
As shown in Figure 7 to 9, the wafer cleaning brush of the present embodiment comprises sleeve 31 and is arranged at several bump structures 32 on sleeve 31 outer surface, wherein, the outer surface of described sleeve 31 comprises first area 33a along the axial distribution of sleeve 31 and second area 33b, described first area 33a is positioned at the middle part of sleeve 31, described second area 33b is positioned at the both sides of first area 33a, and the density of described first area 33a bumps structure 32 is less than the density of second area 33b bumps structure 32.
Herein, the density of described bump structure 32 can be understood as: the quantity of bump structure in the quantity of every square millimeter of bump structure or per unit length, the utility model does not do concrete restriction, as long as be convenient to arrange.In the present embodiment, described bump structure 32 for serving as bristle, to scrub process to wafer.
Optionally, the quantity of every square millimeter of bump structure in described first area 33a is set to 25% ~ 75% of every square millimeter of bump structure quantity in second area 33b.Such as: the area of outer peripheral surface of described second area 33b is 40 square millimeters, the outer surface of simultaneously described second area 33b is distributed with 160 bump structures 32, so, the distribution density of bump structure 32 quantity in described second area 33b is 4 bump structures/every square millimeter, thus, the distribution density scope of the quantity of the bump structure 32 in described first area 33a is 1 bump structure/every square millimeter ~ 3 bump structure/every square millimeter; Concrete, when the area of outer peripheral surface of described first area 33a is 20 square millimeters, so, the quantity of the bump structure 32 in described first area 33a is 20 ~ 60.
During above-mentioned wafer cleaning brush application, in advance described wafer cleaning brush is fixed on the top of wafer, and described wafer cleaning brush is sheathed on roller bearing (not shown) by sleeve 31, and make the center of circle of axis projections through described wafer of described sleeve 31, afterwards, described roller bearing is with moving sleeve 31 to rotate under the driving of a motor, described wafer rotation equidirectional with sleeve 31 under the drive of workbench simultaneously, in rotation process, described first area 33a bumps structure 32 and second area 33b bumps structure 32 all can compress described crystal column surface and form contact friction with described crystal column surface, remain with the grinding of being removed by contact friction force on described crystal column surface.
The wafer cleaning brush that the present embodiment provides is by reducing the density of the bump structure 32 contacted with the central area of wafer, the cleaning frequency (or wash number) of the central area of wafer can be reduced, thus the problem such as scratch, corrosion avoiding the central area of wafer to cause because being subject to frequent clean, not only can guarantee wafer yield, and by means of only reducing the density of the bump structure 32 contacted with the central area of wafer, structure is simple, arranges conveniently, easy to implement.
In the present embodiment, described wafer cleaning brush also adopts cleaning fluid to clean crystal column surface, and described cleaning fluid can flow on bump structure 32 and between bump structure 32, to clean crystal column surface cleaning all sidedly.
As preferred embodiment, described first area 33a bumps structure 32 is staggered on the outer surface of sleeve 31.Described second area 33b bumps structure 32 corresponding interlocking is arranged on the outer surface of sleeve 31.Adopt staggered mode can clean each region covered on crystal column surface, guarantee wafer cleaning quality.
As shown in Figure 10, described bump structure 32 is preferably a cylindrical structure.In other embodiments, described bump structure 32 is chosen as round platform, terrace with edge, prism or cylindroid structure.
As shown in figure 11, described bump structure 32 can comprise the polycrystalline substance 32a be fixed on sleeve 31 outer surface and the top structure 32b be arranged on polycrystalline substance 32a further.Described top structure 32b is used for contacting with crystal column surface thus forming contact friction, to clean crystal column surface.
Especially, the top structure 32b of described first area 33a bumps structure 32 and the area of wafer contacts are less than the top structure 32b of second area 33b bumps structure 32 and the area of wafer contacts.Adopt the contact area reducing the bump structure 32 contacted with the central area of wafer, utilize the cleaning frequency of the central area reducing wafer, and then the problem such as scratch, corrosion avoiding the central area of wafer to cause because being subject to frequent clean, improve cleaning quality further.
Optionally, the top structure 32b of described first area 33a bumps structure 32 and the area of wafer contacts are 40% ~ 80% of the top structure 32b of second area 33b bumps structure 32 and the area of wafer contacts.Such as: the described top structure 32b of second area 33b bumps structure 32 and the area of wafer contacts are 100 square millimeters, then the top structure 32b of described first area 33a bumps structure 32 and the area of wafer contacts are preferably 40 square millimeters ~ 80 square millimeters.
As shown in figure 12, and Figure 11 is consulted in combination, wherein, the a part of structure eliminating wafer cleaning brush in Figure 12 is as the part-structure of sleeve 31 and a part of bump structure 32 of being distributed on sleeve 31, and be described with the axis direction projection perpendicular to sleeve 31, the top structure 32b of described first area 33a bumps structure 32 is preferably hemisphere jut.Described polycrystalline substance 32a is chosen as round platform, terrace with edge, prism, cylinder or cylindroid structure.Adopt the central area of spherical structure contact wafer, compared to the top of other shapes as round platform, terrace with edge, prism, cylinder or cylindroid, the contact-making surface of the central area of described hemisphere jut and wafer 40 is less, thus, the cleaning frequency of the central area of described wafer can obtain more effectively reducing, and guarantees wafer yield better.
[embodiment two]
Embodiment two and embodiment one difference are: as shown in figure 13, bump structure 32 in described first area 33a comprises the first staggered bump structure 32c and the second bump structure 32d, and the height of described first bump structure 32c is less than the height of the second bump structure 32d.Bump structure 32 in the 33a of first area is set to two kinds of height by the wafer cleaning brush of the present embodiment, be beneficial to the contact-making surface area reducing the bump structure 32 in the 33a of first area and the central area of wafer generally, thus the contact that the central area reducing wafer is subject to, and then the contact friction force that the central area reducing wafer is subject to, to reduce the cleaning strength of the central area of wafer by reducing contact friction force, the problem such as scratch, corrosion avoiding the central area of wafer to cause because of excessive by cleaning strength, guarantees wafer yield further.
Wherein, a part of structure eliminating wafer cleaning brush in Figure 13 as the part-structure of sleeve 31 and all the other be distributed in bump structure 32 on sleeve 31, and with the axis direction projection perpendicular to sleeve 31, the present embodiment to be described.
Specifically, during cleaning wafer surface, described wafer cleaning brush compresses crystal column surface by bump structure 32 and forms contact friction with crystal column surface and realize cleaning, and wherein, the computing formula of the contact friction force that bump structure contacts with crystal column surface is as follows:
F
S＝μ×Pd(1)
Pd＝Pa×Ap(2)
F
S＝μ×Pa×Ap(3)
In formula (1), F
sfor contact friction force value when bump structure contacts with crystal column surface, μ is friction co-efficient value, and Pd is the bump structure contact value that crystal column surface is subject to when contacting with crystal column surface.
In formula (2), Pa is the pressure values put on bump structure, and Ap is the contact-making surface area of bump structure and crystal column surface.
In conjunction with formula (1) and (2), formula (3) can be obtained, namely the contact friction force value F that contacts with crystal column surface of bump structure
srelevant with contact-making surface area A p with pressure values Pa, therefore, in order to solve the central area of wafer because of contact friction force value F
sexcessive and the cleaning strength problems of too that causes, inventor takes by reducing pressure values Pa and contact-making surface area A p, the contact friction force value F that the central area reducing wafer is subject to
s, thus prevent the central area of wafer from occurring the problem such as scratch, corrosion.
In the present embodiment, the height of the bump structure 32 in described second area 33b is equal, the average height of the bump structure 32 in described first area 33a preferably equals the height of the bump structure 32 in second area 33b, to balance the cleaning strength of wafer on the whole, avoids cleaning problem of non-uniform.
Optionally, the height of the aspect ratio second area 33b bumps structure 32 of described first bump structure 32c is little 2 ~ 5 millimeters, large 2 ~ 5 millimeters of the height of the aspect ratio second area 33b bumps structure 32 of described second bump structure 32d.In the present embodiment, the height of the bump structure 32 in described second area 33b is preferably 10 ~ 15 millimeters.Certainly, the height of the bump structure 32 in described second area 33b is including, but not limited to described preferred size, concrete, can be adjusted accordingly according to actual needs.
When the height of the bump structure 32 in described second area 33b is 10 millimeters, the height of the first bump structure 32c be chosen as 5 ~ 8 millimeters, the height of described second bump structure 32d is chosen as 12 ~ 15 millimeters.
[embodiment three]
Present embodiments provide a kind of wafer cleaning device, it comprises embodiment one or the wafer cleaning brush described in embodiment two and roller bearing, and described wafer cleaning brush is sheathed on described roller bearing, and carries out rolling cleaning to crystal column surface under the driving of described roller bearing.
Wherein, described wafer cleaning brush can clean wafer frontside or reverse side.Certainly, during actual use, described wafer cleaning device also can comprise a pair embodiment one and the wafer cleaning brush described in embodiment two, to clean positive and negative two surfaces of wafer simultaneously.
In the present embodiment, the sleeve 31 of described wafer cleaning brush is sheathed on described roller bearing, to be rotated by described roller bearing drive sleeve 31.Described wafer cleaning device also comprises the motor for driving described roller bearing to rotate, and described wafer cleaning device drives described roller bearing to rotate by described motor, and is with moving sleeve 31 to rotate.
During above-mentioned wafer cleaning device application, bump structure 32 in described wafer cleaning brush is for serving as bristle, the top structure 32b of the bump structure 32 in described first area 33a is chosen as hemisphere jut as shown in figure 11, and the shape of the bump structure 32 in described second area 33b is chosen as cylindrical structure as shown in Figure 10.
In conjunction with consulting Fig. 7 to Figure 13, in the cleaning process of wafer, described wafer cleaning brush is fixed on the top of wafer 40, and by the center of circle of the axis projections of described sleeve 31 through wafer 40, afterwards, make described roller bearing under the driving of described motor, be with moving sleeve 31 to rotate, in rotary course, the cleaning fluid carried is sent on bump structure 32 and between bump structure 32 by described wafer cleaning device, realizes the cleaning of wafer with the acting in conjunction by chemical force and mechanical force.
In sum, wafer cleaning brush of the present utility model and wafer cleaning device have following beneficial effect:
First, described wafer cleaning brush is by being set to the density of first area bumps structure the density being less than second area bumps structure, sleeve stress deformation can be avoided and make the first area bumps structure be arranged in the middle part of sleeve contact crystal circle center region all the time in cleaning process and cause crystal circle center's region frequent clean problem, guaranteeing wafer yield.And described wafer cleaning brush, by means of only the density reducing the bump structure contacted with crystal circle center region, arranges convenience, easy to implement.
Secondly, described wafer cleaning brush is set to be less than the top structure of second area bumps structure and the area of wafer contacts further by by the top structure of first area bumps structure and the area of wafer contacts, the contact area of the bump structure contacted with crystal circle center region can be reduced, thus reduce the cleaning frequency in crystal circle center region, guarantee wafer yield further.
Again, described wafer cleaning brush is again by being set to the bump structure in first area comprise the first staggered bump structure and the second bump structure, wherein, the height of described first bump structure is less than the height of the second bump structure, the contact-making surface area of the bump structure contacted with crystal circle center region can be reduced, thus the contact that reduction crystal circle center region is subject to, and then the contact friction force that reduction crystal circle center region is subject to, reduce the cleaning strength in crystal circle center region thus, avoid the scratch that crystal circle center region causes because of excessive by cleaning strength, the problems such as corrosion, guarantee wafer yield further.
Foregoing description is only the description to the utility model preferred embodiment; any restriction not to the utility model scope; any change that the those of ordinary skill in the utility model field does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (10)
1. a wafer cleaning brush, comprise sleeve and be arranged at the some bump structures on described sleeve outer surface, it is characterized in that, described sleeve outer surface comprises first area along described sleeve axial distribution and second area, described first area is positioned at the middle part of described sleeve, described second area is positioned at the both sides of described first area, and wherein, the density of described first area bumps structure is less than the density of described second area bumps structure.
2. wafer cleaning brush as claimed in claim 1, it is characterized in that, the density of described first area bumps structure is 25% ~ 75% of the density of described second area bumps structure.
3. wafer cleaning brush as claimed in claim 1, it is characterized in that, described bump structure comprises the polycrystalline substance be fixed on described sleeve outer surface and the top structure be arranged on described polycrystalline substance, wherein, the top structure of described first area bumps structure and the area of wafer contacts are less than the described top structure of second area bumps structure and the area of wafer contacts.
4. wafer cleaning brush as claimed in claim 3, it is characterized in that, the top structure of described first area bumps structure and the area of wafer contacts are 40% ~ 80% of the described top structure of second area bumps structure and the area of wafer contacts.
5. wafer cleaning brush as claimed in claim 3, it is characterized in that, the top structure of described first area bumps structure is hemisphere jut, and described polycrystalline substance is round platform, terrace with edge, prism, cylinder or cylindroid structure.
6. wafer cleaning brush as claimed in claim 1, it is characterized in that, the bump structure in described first area comprises the first staggered bump structure and the second bump structure, and the height of described first bump structure is less than the height of described second bump structure.
7. wafer cleaning brush as claimed in claim 6, it is characterized in that, the height of the bump structure in described second area is equal, and the average height of the bump structure in described first area equals the height of the bump structure in described second area.
8. wafer cleaning brush as claimed in claim 7, it is characterized in that, described in the aspect ratio of described first bump structure, the height of second area bumps structure is little 2 ~ 5 millimeters, large 2 ~ 5 millimeters of the height of second area bumps structure described in the aspect ratio of described second bump structure.
9. wafer cleaning brush as claimed in claim 7, it is characterized in that, the height of described second area bumps structure is 10 ~ 15 millimeters.
10. a wafer cleaning device, is characterized in that, comprise roller bearing and wafer cleaning brush as claimed in any one of claims 1-9 wherein, described wafer cleaning brush is sheathed on described roller bearing, and carries out rolling cleaning to crystal column surface under the driving of described roller bearing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520683856.3U CN204885113U (en) | 2015-09-06 | 2015-09-06 | Wafer cleaning brush and wafer belt cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520683856.3U CN204885113U (en) | 2015-09-06 | 2015-09-06 | Wafer cleaning brush and wafer belt cleaning device |
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| Publication Number | Publication Date |
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| CN204885113U true CN204885113U (en) | 2015-12-16 |
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| CN201520683856.3U Expired - Fee Related CN204885113U (en) | 2015-09-06 | 2015-09-06 | Wafer cleaning brush and wafer belt cleaning device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106670149A (en) * | 2016-12-23 | 2017-05-17 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Cleaning brush driving shaft structure of post-CMP cleaning equipment and use method |
| CN111834259A (en) * | 2020-07-17 | 2020-10-27 | 中国科学院微电子研究所 | Cleaning assembly |
| CN112589668A (en) * | 2019-10-01 | 2021-04-02 | 力晶积成电子制造股份有限公司 | Post-grinding cleaning device |
| CN112864011A (en) * | 2021-01-04 | 2021-05-28 | 长江存储科技有限责任公司 | Cleaning device and CMP cleaning equipment |
-
2015
- 2015-09-06 CN CN201520683856.3U patent/CN204885113U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106670149A (en) * | 2016-12-23 | 2017-05-17 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Cleaning brush driving shaft structure of post-CMP cleaning equipment and use method |
| CN106670149B (en) * | 2016-12-23 | 2019-05-17 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Cleaning brush driving shaft structure of post-CMP cleaning equipment and use method |
| CN112589668A (en) * | 2019-10-01 | 2021-04-02 | 力晶积成电子制造股份有限公司 | Post-grinding cleaning device |
| CN111834259A (en) * | 2020-07-17 | 2020-10-27 | 中国科学院微电子研究所 | Cleaning assembly |
| CN112864011A (en) * | 2021-01-04 | 2021-05-28 | 长江存储科技有限责任公司 | Cleaning device and CMP cleaning equipment |
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