CN204651335U - A kind of silica-based solar cell - Google Patents
A kind of silica-based solar cell Download PDFInfo
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- CN204651335U CN204651335U CN201520406705.3U CN201520406705U CN204651335U CN 204651335 U CN204651335 U CN 204651335U CN 201520406705 U CN201520406705 U CN 201520406705U CN 204651335 U CN204651335 U CN 204651335U
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- solar cell
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- based solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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Abstract
A kind of silica-based solar cell, comprises P semiconductor, P semi-conducting electrode layer, N semiconductor, N semi-conducting electrode layer and P-N junction and closes region layer; The top of described N semi-conducting electrode layer is provided with gain of light structure sheaf.The MgF2 face glass of the utility model by using gain of light structure to replace original solar cell N electrode top, make it more fully, more reasonably absorb sunlight, thus improve the photoelectric conversion efficiency of silica-based solar cell and reduce the work junction temperature of solar cell.
Description
Technical field
The utility model relates to photovoltaic solar cell technical field, particularly relates to a kind of silica-based solar cell.
Background technology
Solar energy has the advantages such as renewable, pollution-free, and be a kind of green novel energy source having competitiveness, silica-based solar cell photovoltaic power generation technology is considered to new energy technology most with prospects now.
Silica-based solar cell is the common a kind of solar cell of industry.The principle of silica-based solar cell highly purified semi-conducting material (silicon) is added admixture thing make it present different character, with formed p-type semiconductor and and n-type semiconductor, and p-n amphitypy semiconductor to be engaged, so can form p-n junction face.When solar irradiation is mapped to the semiconductor of a p-n junction structure, the energy that photon provides out may produce electron-hole pair the electron excitation in semiconductor.Photohole flows to p district, and light induced electron flows to n district, with regard to generation current after connection circuit, can form solar cell.
Si based solar battery band gap Eg is 1.12eV (1100nm), and the theoretical light transformation efficiency upper limit is about 30%, and industrialization Si based solar battery efficiency is only 15 ~ 18%, well below theoretical energy valid value.Secondly, the near infrared light (1200 ~ 2500nm) being less than band gap Eg 1.2eV (1100nm) in sunlight not only cannot utilize, but also the work junction temperature of silica-based solar cell can be improved, thus reduce light conversion ratio and the useful life of solar cell.
Therefore, how more fully, more reasonably to absorb sunlight, improving the photoelectric conversion efficiency of silica-based solar cell and reduce the work junction temperature of solar cell, is the hot issue in current silica-based solar cell research field.
Summary of the invention
The purpose of this utility model is more fully, more reasonably to absorb sunlight, and the photoelectric conversion efficiency improving silica-based solar cell and the work junction temperature reducing solar cell propose a kind of silica-based solar cell.
For reaching this object, the utility model by the following technical solutions:
A kind of silica-based solar cell, it comprises N semiconductor from top to bottom successively, P-N junction closes district and P semiconductor; Described N semiconductor is provided with electrode, and the top of described N semiconductor is provided with gain of light structure; Described gain of light structure is hemisphere, taper shape, anti-hemisphere and the anti-conical prismatic light gaining structure that one or both mix; There is P semi-conducting electrode layer the below of described P semiconductor.
Preferably, thermal dispersant coatings is covered with bottom described P semi-conducting electrode layer.
Preferably, the radian of described hemisphere gain of light structure is 40-55 °.
Preferred further, the radian of described hemisphere gain of light structure is 48 °.
Preferably, the tapering of described conical gain of light structure is 10-15 °.
Preferred further, the tapering of described conical gain of light structure is 12 °.
The MgF2 face glass of the utility model by using hemisphere, taper shape, anti-hemisphere and the anti-conical prismatic light gaining structure that one or both mix to replace original solar cell N electrode top, make it more fully, more reasonably absorb sunlight, thus improve the photoelectric conversion efficiency of silica-based solar cell and reduce the work junction temperature of solar cell.
Accompanying drawing explanation
Fig. 1 solar battery structure schematic diagram with hemisphere gain of light structure sheaf of the present utility model.
Fig. 2 solar battery structure schematic diagram with anti-hemisphere gain of light structure sheaf of the present utility model.
Fig. 3 solar battery structure schematic diagram with anti-hemisphere and anti-conical structure gain of light structure sheaf of the present utility model.
Fig. 4 solar battery structure schematic diagram with anti-conical gain of light structure sheaf of the present utility model.
Fig. 5 solar battery structure schematic diagram with conical gain of light structure sheaf of the present utility model.
Wherein: P semiconductor 1, P semi-conducting electrode layer 2, N semiconductor 3, electrode 4, P-N junction close region layer 5, gain of light structure sheaf 6, coating 7.
Embodiment
The technical solution of the utility model is further illustrated by embodiment below in conjunction with accompanying drawing.
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4 and Fig. 5, a kind of silica-based solar cell, it comprises N semiconductor 3 from top to bottom successively, P-N junction closes district 5 and P semiconductor 1; Described N semiconductor 3 is provided with electrode 4, and the top of described N semiconductor 3 is provided with gain of light structure 6; Described gain of light structure 6 is hemisphere, taper shape, anti-hemisphere and the anti-conical prismatic light gaining structure that one or both mix; There is P semi-conducting electrode layer 2 below of described P semiconductor 1.
The major function of above different optical gain structure has: (1), increase solar light irradiation area, be 4 π r2 as spherome surface amasss, it is 2 π r2, area of plane π r2 that hemisphere surface is amassed.If its surface area of circular cone π is rl, l=2r, same conical surface amasss 2 times into the area of plane.Therefore, by above-mentioned theory analysis and designation, making same area to accept solar energy area increases by 1 times; (2), change light direction, reduce reflection, improve light overall utilization.
Preferably, thermal dispersant coatings 7 is covered with bottom described P semi-conducting electrode layer 2.
For the near infrared light of the unserviceable 1200-2000nm of solar cell, this part luminous energy not only battery cannot utilize, but also p district work junction temperature can be caused to raise, thus reduces the phototranstormation efficiency of solar cell.By being coated with thermal dispersant coatings, reduce the p district working temperature of silica-based solar cell, thus improve silica-based solar cell light conversion ratio and useful life.
Preferably, the radian of described hemisphere gain of light structure is 40-55 °.
Radian is too little or too large, and it is not very large for accepting solar energy area; And at change light direction, the effect reducing reflection and raising light overall utilization etc. is not very large, and radian is that the effect of 40-55 ° is better.
Preferred further, the radian of described hemisphere gain of light structure is 48 °
No matter radian is accept solar energy area if being 48 °, or at change light direction, it is all best for reducing reflection and improving light overall utilization.
Preferably, the tapering of described conical gain of light structure is 10-15 °.
Tapering is too little or too large, and it is not very large for accepting solar energy area; And at change light direction, the effect reducing reflection and raising light overall utilization etc. is not very large, and tapering is that the effect of 10-15 ° is better.
Preferred further, the tapering of described conical gain of light structure is 12 °.
No matter tapering is accept solar energy area if being the conical gain of light structure of 12 °, or at change light direction, it is all best for reducing reflection and improving light overall utilization.
Below know-why of the present utility model is described in conjunction with specific embodiments.These describe just in order to explain principle of the present utility model, and can not be interpreted as the restriction to the utility model protection range by any way.Based on explanation herein, those skilled in the art does not need to pay performing creative labour can associate other embodiment of the present utility model, and these modes all will fall within protection range of the present utility model.
Claims (6)
1. a silica-based solar cell, is characterized in that: it comprises N semiconductor from top to bottom successively, P-N junction closes district and P semiconductor; Described N semiconductor is provided with electrode, and the top of described N semiconductor is provided with gain of light structure; Described gain of light structure is hemisphere, taper shape, anti-hemisphere and the anti-conical prismatic light gaining structure that one or both mix; There is P semi-conducting electrode layer the below of described P semiconductor.
2. silica-based solar cell according to claim 1, is characterized in that: be covered with thermal dispersant coatings bottom described P semi-conducting electrode layer.
3. silica-based solar cell according to claim 2, is characterized in that: the radian of described hemisphere gain of light structure is 40-55 °.
4. silica-based solar cell according to claim 3, is characterized in that: the radian of described hemisphere gain of light structure is 48 °.
5. silica-based solar cell according to claim 4, is characterized in that: the tapering of described conical gain of light structure is 10-15 °.
6. silica-based solar cell according to claim 5, is characterized in that: the tapering of described conical gain of light structure is 12 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520406705.3U CN204651335U (en) | 2015-06-12 | 2015-06-12 | A kind of silica-based solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520406705.3U CN204651335U (en) | 2015-06-12 | 2015-06-12 | A kind of silica-based solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN204651335U true CN204651335U (en) | 2015-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520406705.3U Active CN204651335U (en) | 2015-06-12 | 2015-06-12 | A kind of silica-based solar cell |
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| Country | Link |
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| CN (1) | CN204651335U (en) |
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2015
- 2015-06-12 CN CN201520406705.3U patent/CN204651335U/en active Active
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