CN204614783U - A kind of Intelligent Power Module - Google Patents
A kind of Intelligent Power Module Download PDFInfo
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- CN204614783U CN204614783U CN201520317614.2U CN201520317614U CN204614783U CN 204614783 U CN204614783 U CN 204614783U CN 201520317614 U CN201520317614 U CN 201520317614U CN 204614783 U CN204614783 U CN 204614783U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model discloses a kind of Intelligent Power Module, comprise a heating panel and some power chips, this heating panel upper surface is provided with an insulating barrier, be provided with circuit-wiring layer on which insulating layer, this circuit-wiring layer is provided with some power chips and pin, set up by circuit-wiring layer between power chip with pin and be electrically connected, heating panel, insulating barrier, circuit-wiring layer, power chip and pin are encapsulated in inside the resin-case in quad flat shape, wherein said pin runs through described resin-case and outwards horizontal expansion, the side of described heating panel is encapsulated by described resin-case, the lower surface of described heating panel is exposed, the Intelligent Power Module of this structure is conducive to realizing surface mount process, and due to the reduction of Intelligent Power Module volume, it is less except can microelectronics Packaging be met, thinner, lighter growth requirement, endophyte parameter can also be reduced, enhance product performance.
Description
Technical field:
The utility model relates to a kind of Intelligent Power Module, belongs to manufacture field of electronic elements.
Background technology:
Current country is promoting energy-saving and emission-reduction, low carbon development energetically, and energy-saving and emission-reduction, low carbon development be unable to do without the support of Power semiconductor products.Intelligent Power Module (IPM) is widely used in white domestic appliances series products, annual demand is huge, but traditional intelligence power model volume is large, be not easy to packaging technology, parasitic parameter is large, makes this series products loss increase, be not easy to the problems such as integrated.
Existing Intelligent Power Module (IPM) generally adopts dip (DIP) or single row direct insert encapsulation (SIP), described packing forms is the simplest packing forms, its number of pins is few, is applicable to the piercing welding of printed wiring board (PCB).As depicted in figs. 1 and 2, the Intelligent Power Module of existing employing DIP packing forms, in figure, 101 represent power pin, and 102 represent heating panel, 103 representative ring epoxy resins, and 104 represent signal pin.In described packing forms, the ratio of package area and chip area is comparatively large, and the volume after encapsulation is also comparatively large, be not suitable for microelectronics Packaging thinner, gentlier, less developing direction.
The production efficiency of present pcb board assembly is higher, assembling flow path is generally Solder-Paste Printing, component mounter, Reflow Soldering etc., but the DIP packing forms of Intelligent Power Module generally adopts wave-soldering, incompatible with the production technology of other element, and pin is easily out of shape in assembling process, not only increase equipment, personnel cost, but also need the technique increasing the too high pin of excision in post-order process.
From aspect of performance, due to the Intelligent Power Module interconnection line of existing DIP or SIP packing forms and pin longer, add the parameters such as the stray inductance of device, dead resistance, parasitic capacitance, the power consumption of first device increased, the shortcomings such as switching speed is slack-off.
Summary of the invention:
The purpose of this utility model is to provide a kind of Intelligent Power Module, the Intelligent Power Module of this structure is conducive to realizing surface mount process, and due to the reduction of Intelligent Power Module volume, except less, thinner, the lighter growth requirement of microelectronics Packaging can be met, endophyte parameter can also be reduced, enhance product performance.
The purpose of this utility model is achieved by following technical proposals.
A kind of Intelligent Power Module, comprise a heating panel and some power chips, this heating panel upper surface is provided with an insulating barrier, be provided with circuit-wiring layer on which insulating layer, this circuit-wiring layer is provided with some power chips and pin, set up by circuit-wiring layer between power chip with pin and be electrically connected, heating panel, insulating barrier, circuit-wiring layer, power chip and pin are encapsulated in inside the resin-case in quad flat shape, wherein said pin runs through described resin-case and outwards horizontal expansion, the side of described heating panel is encapsulated by described resin-case, the lower surface of described heating panel is exposed.
Above-mentioned heating panel adopts metallic copper to make, and is coated with tin at the lower surface of heating panel.
Above-mentioned power chip comprises some igbt chips and some diode chip for backlight unit, and igbt chip and diode chip for backlight unit are welded on the upper surface of described circuit-wiring layer, is set up be electrically connected between igbt chip with diode chip for backlight unit by metal wire.
Above-mentioned being encapsulated in also comprises driver circuit plate inside resin-case, is installed by welding with driving chip, plate resistor and sheet capacitor at the upper surface of driver circuit plate, is set up be electrically connected between driving chip with igbt chip by metal wire.
Above-mentioned pin comprises power pin and signal pin, power pin one end is welded on the upper surface of described circuit-wiring layer, the other end runs through described resin-case and outwards horizontal expansion, signal pin one end is welded on the upper surface of described driver circuit plate, and the other end runs through described resin-case and outwards horizontal expansion.
A kind of Intelligent Power Module, comprise a heating panel and some power chips, this heating panel upper surface is provided with an insulating barrier, be provided with circuit-wiring layer and pin on which insulating layer, circuit-wiring layer and pin form lead frame, some power chips are welded on the upper surface of described lead frame, heating panel, insulating barrier, circuit-wiring layer, some power chips and pin are encapsulated in inside the resin-case in quad flat shape, wherein said pin runs through described resin-case and outwards horizontal expansion, the side of described heating panel is encapsulated by described resin-case, the lower surface of described heating panel is exposed.
Above-mentioned pin comprises power pin and signal pin, and power pin, signal pin and circuit-wiring layer form lead frame, and lead frame adopts the overall drawing of metallic plate, and power chip is welded on the upper surface of described lead frame.
Above-mentioned power chip comprises some igbt chips and some diode chip for backlight unit, and igbt chip and diode chip for backlight unit are welded on the upper surface of described lead frame, is set up be electrically connected between igbt chip with diode chip for backlight unit by metal wire.
The above-mentioned upper surface at described lead frame is also installed by welding with driving chip, plate resistor and sheet capacitor, is set up be electrically connected between driving chip with igbt chip by metal wire.
The utility model compared with prior art, has following effect:
● the Intelligent Power Module of this structure is conducive to realizing surface mount process, compatibility is obtained with other production technologies, thus reduce process costs, and due to the reduction of Intelligent Power Module volume, except less, thinner, the lighter growth requirement of microelectronics Packaging can be met, endophyte parameter can also be reduced, enhance product performance;
● the surrounding of described Intelligent Power Module all can arrange pin, can realize thin space, highdensity assembling requirement.
● the heat that Intelligent Power Module produces can conduct to PCB by the heating panel of described Intelligent Power Module inside, and save the fin that middle low power Intelligent Power Module is external, structural reliability is higher, and heat dispersion is better.
Accompanying drawing illustrates:
Fig. 1 is the stereogram one of the Intelligent Power Module of existing employing DIP packing forms;
Fig. 2 is the stereogram two of the Intelligent Power Module of existing employing DIP packing forms;
Fig. 3 is the stereogram of an Intelligent Power Module angle in embodiment one;
Fig. 4 is the stereogram of another angle of Intelligent Power Module in embodiment one;
Fig. 5 is the structural representation of Intelligent Power Module in embodiment one;
Fig. 6 is the circuit theory diagrams of some power chips in embodiment;
Fig. 7 is the circuit theory diagrams of driving chip in embodiment;
Fig. 8 is the stereogram of an Intelligent Power Module angle in embodiment two;
Fig. 9 is the stereogram of another angle of Intelligent Power Module in embodiment two;
Figure 10 is the structural representation of Intelligent Power Module in embodiment two;
Figure 11 is the structural representation of pcb board assembly in embodiment three.
Embodiment:
Also by reference to the accompanying drawings the utility model is described in further detail below by specific embodiment.
Embodiment one: as Fig. 3, shown in Fig. 4 and Fig. 5, the present embodiment is a kind of Intelligent Power Module, comprise a heating panel 1 and some power chips, this heating panel 1 upper surface is provided with an insulating barrier 11, this insulating barrier 11 is provided with circuit-wiring layer 12, this circuit-wiring layer 12 is provided with some power chips and pin, set up by circuit-wiring layer 12 between power chip with pin and be electrically connected, heating panel 1, insulating barrier 11, circuit-wiring layer 12, power chip and pin are encapsulated in inside the resin-case 2 in quad flat shape, wherein said pin runs through described resin-case 2 and outwards horizontal expansion, the side of described heating panel 1 is encapsulated by described resin-case 2, the lower surface of described heating panel 1 is exposed.During Intelligent Power Module assembling, in described Intelligent Power Module, heating panel 1 is welded in PCB by solder, the heat that Intelligent Power Module internal power chip produces conducts to PCB by described heating panel 1, in can solving, small-power Intelligent Power Module, the especially heat dissipation problem of SiC chip intelligent power model.The shape of heating panel can be determined according to the particular location of power chip, can be square, but be not limited to square; The size, position, combination etc. of pin also can require flexible configuration according to electronic devices and components simultaneously.
Described pin is that gull is wing, facilitates pin to adopt Reflow Soldering to be welded on the corresponding pad locations of PCB, realizes electrical connection, and the advantage of Reflow Soldering is that temperature is easy to control, and can also avoid oxidation in welding process, manufacturing cost also more easily controls.Described heating panel 1 adopts metallic copper to make, metallic copper has good conduction and heat conductivility, special than being suitable as heating panel in the present embodiment, and is coated with tin at the lower surface of heating panel 1, conveniently described Intelligent Power Module is welded in PCB, improves welding efficiency.
Only illustrating Partial Power chip in Fig. 5, in practical application, should be how group power chip laid out in parallel together, is shown in Fig. 6 and Fig. 7, more specifically, clearly the electrical connection in Intelligent Power Module in embodiment is showed.
Described power chip comprises some igbt chips 31 and some diode chip for backlight unit 32, igbt chip 31 and diode chip for backlight unit 32 are welded on the upper surface of described circuit-wiring layer 12 respectively by solder joint 171 and solder joint 172, set up be electrically connected between igbt chip 31 with diode chip for backlight unit 32 by metal wire 4.
Some igbt chips 31 comprise igbt chip Q1, igbt chip Q2, igbt chip Q3, igbt chip Q4, igbt chip Q5 and igbt chip Q6, and some diode chip for backlight unit 32 comprise diode chip for backlight unit D1, diode chip for backlight unit D2, diode chip for backlight unit D3, diode chip for backlight unit D4, diode chip for backlight unit D5 and diode chip for backlight unit D6.6 igbt chip composition three phase full bridge structures, the emitter of igbt chip Q1 and the collector electrode of igbt chip Q2 link together and draw pin U, the emitter of igbt chip Q3 and the collector electrode of igbt chip Q4 link together and draw pin V, the emitter of igbt chip Q5 and the collector electrode of igbt chip Q6 link together and draw pin W, and the collector electrode of igbt chip Q1, igbt chip Q3 and igbt chip Q5 links together.The positive pole of diode chip for backlight unit D1 and the emitter of igbt chip Q1 link together and the collector electrode of the negative pole of diode chip for backlight unit D1 and igbt chip Q1 links together, the positive pole of diode chip for backlight unit D2 and the emitter of igbt chip Q2 link together and the collector electrode of the negative pole of diode chip for backlight unit D2 and igbt chip Q2 links together, the positive pole of diode chip for backlight unit D3 and the emitter of igbt chip Q3 link together and the collector electrode of the negative pole of diode chip for backlight unit D3 and igbt chip Q3 links together, the positive pole of diode chip for backlight unit D4 and the emitter of igbt chip Q4 link together and the collector electrode of the negative pole of diode chip for backlight unit D4 and igbt chip Q4 links together, the positive pole of diode chip for backlight unit D5 and the emitter of igbt chip Q5 link together and the collector electrode of the negative pole of diode chip for backlight unit D5 and igbt chip Q5 links together, the positive pole of diode chip for backlight unit D6 and the emitter of igbt chip Q6 link together and the collector electrode of the negative pole of diode chip for backlight unit D6 and igbt chip Q6 links together.
And preferred, described diode chip for backlight unit adopts FRD chip, i.e. fast recovery diode chip, it is good that FRD chip has switching characteristic, the advantages such as reverse recovery time is short, forward current is large, volume is little, simple installation.
Be encapsulated in and also comprise driver circuit plate 13 inside resin-case 2, be installed by welding with driving chip 14, plate resistor 15 and sheet capacitor 16 at the upper surface of driver circuit plate 13, wherein driving chip 14 is the upper surfaces being welded on described driver circuit plate 13 by solder joint 173.Set up be electrically connected by metal wire 4 between driving chip 14 and the base stage of each igbt chip 31, driving chip 14 output drive signal to each igbt chip 31 to drive each igbt chip 31 ON operation in turn.
Described pin comprises power pin 51 and signal pin 52, power pin 51 one end is welded on the upper surface of described circuit-wiring layer 12 by solder joint 174, the other end runs through described resin-case 2 and outwards horizontal expansion, signal pin 52 one end is welded on the upper surface of described driver circuit plate 13 by solder joint 175, and the other end runs through described resin-case 2 and outwards horizontal expansion.
Embodiment two: as Fig. 8, shown in Fig. 9 and Figure 10, the present embodiment is a kind of Intelligent Power Module, comprise a heating panel 1 and some power chips, this heating panel 1 upper surface is provided with an insulating barrier 11, this insulating barrier 11 is provided with circuit-wiring layer 12 and pin, circuit-wiring layer 12 and pin form lead frame, some power chips are welded on the upper surface of described lead frame, heating panel 1, insulating barrier 11, circuit-wiring layer 12, some power chips and pin are encapsulated in inside the resin-case 2 in quad flat shape, wherein said pin runs through described resin-case 2 and outwards horizontal expansion, the side of described heating panel 1 is encapsulated by described resin-case 2, the lower surface of described heating panel 1 is exposed.During Intelligent Power Module assembling, in described Intelligent Power Module, heating panel 1 is welded in PCB by solder, the heat that Intelligent Power Module internal power chip produces conducts to PCB by described heating panel 1, in can solving, small-power Intelligent Power Module, the especially heat dissipation problem of SiC chip intelligent power model.The shape of heating panel can be determined according to the particular location of power chip, can be square, but be not limited to square; The size, position, combination etc. of pin also can require flexible configuration according to electronic devices and components simultaneously.
Described pin is that gull is wing, facilitates pin to adopt Reflow Soldering to be welded on the corresponding pad locations of PCB, realizes electrical connection, and the advantage of Reflow Soldering is that temperature is easy to control, and can also avoid oxidation in welding process, manufacturing cost also more easily controls.Described heating panel 1 adopts metallic copper to make, metallic copper has good conduction and heat conductivility, special than being suitable as heating panel in the present embodiment, and is coated with tin at the lower surface of heating panel 1, conveniently described Intelligent Power Module is welded in PCB, improves welding efficiency.
Described pin comprises power pin 51 and signal pin 52, and power pin 51, signal pin 52 form lead frame with circuit-wiring layer 12, and lead frame adopts the overall drawing of metallic plate, and power chip is welded on the upper surface of described lead frame.Lead frame adopts the overall drawing of metallic plate, and structure is simple, reduces other production technologies, improves generation efficiency, and overall drawing, be electrically connected more reliable.
Only illustrating Partial Power chip in Figure 10, in practical application, should be how group power chip laid out in parallel together, is shown in Fig. 6 and Fig. 7, more specifically, clearly the electrical connection in Intelligent Power Module in embodiment is showed.
Described power chip comprises some igbt chips 31 and some diode chip for backlight unit 32, igbt chip 31 and diode chip for backlight unit 32 are welded on the upper surface of described lead frame respectively by solder joint 181 and solder joint 182, set up be electrically connected between igbt chip 31 with diode chip for backlight unit 32 by metal wire 4.
Some igbt chips 31 comprise igbt chip Q1, igbt chip Q2, igbt chip Q3, igbt chip Q4, igbt chip Q5 and igbt chip Q6, and some diode chip for backlight unit 32 comprise diode chip for backlight unit D1, diode chip for backlight unit D2, diode chip for backlight unit D3, diode chip for backlight unit D4, diode chip for backlight unit D5 and diode chip for backlight unit D6.6 igbt chip composition three phase full bridge structures, the emitter of igbt chip Q1 and the collector electrode of igbt chip Q2 link together and draw pin U, the emitter of igbt chip Q3 and the collector electrode of igbt chip Q4 link together and draw pin V, the emitter of igbt chip Q5 and the collector electrode of igbt chip Q6 link together and draw pin W, and the collector electrode of igbt chip Q1, igbt chip Q3 and igbt chip Q5 links together.The positive pole of diode chip for backlight unit D1 and the emitter of igbt chip Q1 link together and the collector electrode of the negative pole of diode chip for backlight unit D1 and igbt chip Q1 links together, the positive pole of diode chip for backlight unit D2 and the emitter of igbt chip Q2 link together and the collector electrode of the negative pole of diode chip for backlight unit D2 and igbt chip Q2 links together, the positive pole of diode chip for backlight unit D3 and the emitter of igbt chip Q3 link together and the collector electrode of the negative pole of diode chip for backlight unit D3 and igbt chip Q3 links together, the positive pole of diode chip for backlight unit D4 and the emitter of igbt chip Q4 link together and the collector electrode of the negative pole of diode chip for backlight unit D4 and igbt chip Q4 links together, the positive pole of diode chip for backlight unit D5 and the emitter of igbt chip Q5 link together and the collector electrode of the negative pole of diode chip for backlight unit D5 and igbt chip Q5 links together, the positive pole of diode chip for backlight unit D6 and the emitter of igbt chip Q6 link together and the collector electrode of the negative pole of diode chip for backlight unit D6 and igbt chip Q6 links together.
And preferred, described diode chip for backlight unit adopts FRD chip, i.e. fast recovery diode chip, it is good that FRD chip has switching characteristic, the advantages such as reverse recovery time is short, forward current is large, volume is little, simple installation.
Also be installed by welding with driving chip 14, plate resistor 15 and sheet capacitor 16 at the upper surface of described lead frame, wherein driving chip 14 is welded on the upper surface of described lead frame by solder joint 183.Set up be electrically connected by metal wire 4 between driving chip 14 and the base stage of each igbt chip 31, driving chip 14 output drive signal to each igbt chip 31 to drive each igbt chip 31 ON operation in turn.
Embodiment three: as shown in figure 11, the present embodiment is a kind of pcb board assembly, comprise PCB 6 and the Intelligent Power Module 7 of welded and installed in described PCB 6, described Intelligent Power Module 7 is specifically described Intelligent Power Module in above-described embodiment one or embodiment two, does not repeat them here.The lower surface that wherein said heating panel 1 is exposed is welded in PCB by solder, and described power pin one, signal pin 4 are welded on after drawing in the corresponding pad locations of PCB 6, realize electrical connection.The heat that Intelligent Power Module internal power chip produces conducts to PCB by described heating panel 1, in can solving, small-power Intelligent Power Module, the especially heat dissipation problem of SiC chip intelligent power model.The shape of heating panel can be determined according to the particular location of power chip, can be square, but be not limited to square; The size, position, combination etc. of pin also can require flexible configuration according to electronic devices and components simultaneously.
Claims (10)
1. an Intelligent Power Module, comprise a heating panel (1) and some power chips, it is characterized in that: this heating panel (1) upper surface is provided with an insulating barrier (11), this insulating barrier (11) is provided with circuit-wiring layer (12), this circuit-wiring layer (12) is provided with some power chips and pin, set up by circuit-wiring layer (12) between power chip with pin and be electrically connected, heating panel (1), insulating barrier (11), circuit-wiring layer (12), power chip and pin are encapsulated in resin-case (2) the inside in quad flat shape, wherein said pin runs through described resin-case (2) and outwards horizontal expansion, the side of described heating panel (1) is encapsulated by described resin-case (2), the lower surface of described heating panel (1) is exposed.
2. a kind of Intelligent Power Module according to claim 1, is characterized in that: described heating panel (1) adopts metallic copper to make, and is coated with tin at the lower surface of heating panel (1).
3. a kind of Intelligent Power Module according to claim 1 and 2, it is characterized in that: described power chip comprises some igbt chips (31) and some diode chip for backlight unit (32), igbt chip (31) and diode chip for backlight unit (32) are welded on the upper surface of described circuit-wiring layer (12), set up be electrically connected between igbt chip (31) with diode chip for backlight unit (32) by metal wire (4).
4. a kind of Intelligent Power Module according to claim 3, it is characterized in that: what be encapsulated in resin-case (2) the inside also comprises driver circuit plate (13), be installed by welding with driving chip (14), plate resistor (15) and sheet capacitor (16) at the upper surface of driver circuit plate (13), set up by metal wire (4) between driving chip (14) with igbt chip (31) and be electrically connected.
5. a kind of Intelligent Power Module according to claim 4, it is characterized in that: described pin comprises power pin (51) and signal pin (52), power pin (51) one end is welded on the upper surface of described circuit-wiring layer (12), the other end runs through described resin-case (2) and outwards horizontal expansion, signal pin (52) one end is welded on the upper surface of described driver circuit plate (13), and the other end runs through described resin-case (2) and outwards horizontal expansion.
6. an Intelligent Power Module, comprise a heating panel (1) and some power chips, it is characterized in that: this heating panel (1) upper surface is provided with an insulating barrier (11), this insulating barrier (11) is provided with circuit-wiring layer (12) and pin, circuit-wiring layer (12) and pin form lead frame, some power chips are welded on the upper surface of described lead frame, heating panel (1), insulating barrier (11), circuit-wiring layer (12), some power chips and pin are encapsulated in resin-case (2) the inside in quad flat shape, wherein said pin runs through described resin-case (2) and outwards horizontal expansion, the side of described heating panel (1) is encapsulated by described resin-case (2), the lower surface of described heating panel (1) is exposed.
7. a kind of Intelligent Power Module according to claim 6, it is characterized in that: described pin comprises power pin (51) and signal pin (52), power pin (51), signal pin (52) and circuit-wiring layer (12) form lead frame, lead frame adopts the overall drawing of metallic plate, and power chip is welded on the upper surface of described lead frame.
8. a kind of Intelligent Power Module according to claim 7, it is characterized in that: described power chip comprises some igbt chips (31) and some diode chip for backlight unit (32), igbt chip (31) and diode chip for backlight unit (32) are welded on the upper surface of described lead frame, set up be electrically connected between igbt chip (31) with diode chip for backlight unit (32) by metal wire (4).
9. a kind of Intelligent Power Module according to claim 8, it is characterized in that: be also installed by welding with driving chip (14), plate resistor (15) and sheet capacitor (16) at the upper surface of described lead frame, set up by metal wire (4) between driving chip (14) with igbt chip (31) and be electrically connected.
10. a pcb board assembly, comprise PCB (6) and the Intelligent Power Module (7) of welded and installed in described PCB (6), it is characterized in that: described Intelligent Power Module (7) is the Intelligent Power Module described by any one of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520317614.2U CN204614783U (en) | 2015-05-15 | 2015-05-15 | A kind of Intelligent Power Module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520317614.2U CN204614783U (en) | 2015-05-15 | 2015-05-15 | A kind of Intelligent Power Module |
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| CN204614783U true CN204614783U (en) | 2015-09-02 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787461A (en) * | 2016-12-19 | 2017-05-31 | 深圳市依思普林科技有限公司 | For the IGBT module of motor |
| CN106920793A (en) * | 2017-03-27 | 2017-07-04 | 广东美的制冷设备有限公司 | The preparation method and electrical equipment of SPM, SPM |
| CN109698623A (en) * | 2017-10-20 | 2019-04-30 | 泰达电子股份有限公司 | A kind of power module and power circuit |
-
2015
- 2015-05-15 CN CN201520317614.2U patent/CN204614783U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787461A (en) * | 2016-12-19 | 2017-05-31 | 深圳市依思普林科技有限公司 | For the IGBT module of motor |
| CN106920793A (en) * | 2017-03-27 | 2017-07-04 | 广东美的制冷设备有限公司 | The preparation method and electrical equipment of SPM, SPM |
| CN106920793B (en) * | 2017-03-27 | 2020-04-17 | 广东美的制冷设备有限公司 | Intelligent power module, preparation method of intelligent power module and electric equipment |
| CN109698623A (en) * | 2017-10-20 | 2019-04-30 | 泰达电子股份有限公司 | A kind of power module and power circuit |
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