CN204555991U - A kind of MEMS inertial sensor - Google Patents
A kind of MEMS inertial sensor Download PDFInfo
- Publication number
- CN204555991U CN204555991U CN201520288415.3U CN201520288415U CN204555991U CN 204555991 U CN204555991 U CN 204555991U CN 201520288415 U CN201520288415 U CN 201520288415U CN 204555991 U CN204555991 U CN 204555991U
- Authority
- CN
- China
- Prior art keywords
- capacitance
- substrate
- sensitive structure
- inertial sensor
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The utility model discloses a kind of MEMS inertial sensor, comprise substrate, and be separately fixed at the lid of substrate upper end, lower end, two lids and substrate form the first cavity volume, the second cavity volume that are positioned at substrate both sides respectively; Be provided with the first sensitive structure being positioned at the first cavity volume in the upper end of described substrate by middle close binder, be provided with the second sensitive structure being positioned at the second cavity volume in the lower end of described substrate by middle close binder.The MEMS inertial sensor of utility model, substrate is positioned at the middle part of chip, at the upper and lower surface bonding sensitive structure respectively of substrate, this MEMS inertial sensor is made to have double-deck sensitive structure, thus improve the utilization factor of chip area, improve the overall performance of MEMS inertial sensor, make sensitivity add one times, improve signal to noise ratio (S/N ratio); In other words, compare traditional MEMS inertial sensor, do not reducing on the basis of chip performance, reducing the size of MEMS chip further, to meet the miniaturization of electronic product.
Description
Technical field
The utility model relates to a kind of inertia measurement device, more specifically, relates to a kind of inertia measurement device manufactured based on MEMS, such as mems accelerometer, gyroscope, oscillator etc.
Background technology
At present, along with the development of consumer electronics and wearable device, propose more and more higher requirement to the performance of MEMS inertial sensor, numerous system manufacturer wishes that MEMS inertia device is on the basis keeping existing performance, reduces the size of chip further.Current MEMS inertia device, its sensitive structure layer is anchored on substrate by bonding, at the upper surface bonding MEMS gland bonnet of sensitive structure layer, forms the seal chamber be isolated from the outside.Current problem is, the development comparative maturity of MEMS technology, and technological ability, close to the limit, be difficult to the size of reducing chip again according to the requirement of system manufacturer further, and the space that chip performance continues to promote is also very little.
Utility model content
An object of the present utility model is to provide a kind of new solution of MEMS inertial sensor.
According to first aspect of the present utility model, provide a kind of MEMS inertial sensor, comprise substrate, and be separately fixed at the lid of substrate upper end, lower end, two lids and substrate form the first cavity volume, the second cavity volume that are positioned at substrate both sides respectively; Be provided with the first sensitive structure being positioned at the first cavity volume in the upper end of described substrate by middle close binder, be provided with the second sensitive structure being positioned at the second cavity volume in the lower end of described substrate by middle close binder.
Preferably, be wherein provided with plated-through hole over the substrate, described first sensitive structure and the second sensitive structure are by being connected through the conductive material of plated-through hole or the lead-in wire of connection conductive material.
Preferably, described first sensitive structure comprises the first elastic beam, and being positioned at movable plate C1-1, the movable plate C1-2 of the first elastic beam both sides, described second sensitive structure comprises the second elastic beam, and is positioned at movable plate C2-1, the movable plate C2-2 of the second elastic beam both sides; The upper end of described substrate is provided with the fixed polar plate C3-1 forming C1 capacitance structure with movable plate C1-1, and forms the fixed polar plate C3-2 of C2 capacitance structure with movable plate C1-2; The lower end of described substrate is provided with the fixed polar plate C4-1 forming C3 capacitance structure with movable plate C2-1, and forms the fixed polar plate C4-2 of C4 capacitance structure with movable plate C2-2.
Preferably, described first sensitive structure, the second sensitive structure are translation structure, and wherein, C1 capacitance structure and C3 capacitance structure form overlap capacitance C13; C2 capacitance structure and C4 capacitance structure form overlap capacitance C24, and overlap capacitance C13 and C24 forms differential capacitance structure.
Preferably, described first sensitive structure, the second sensitive structure are deflection structure, and wherein, the direction of described first sensitive structure centre-of gravity shift is contrary with the direction of the second sensitive structure centre-of gravity shift; C1 capacitance structure and C3 capacitance structure form overlap capacitance C13; C2 capacitance structure and C4 capacitance structure form overlap capacitance C24, and overlap capacitance C13 and C24 forms differential capacitance structure.
Preferably, described first sensitive structure, the second sensitive structure are deflection structure, and wherein, the direction of described first sensitive structure centre-of gravity shift is identical with the direction of the second sensitive structure centre-of gravity shift; C1 capacitance structure and C4 capacitance structure form overlap capacitance C14; C2 capacitance structure and C3 capacitance structure form overlap capacitance C23, and overlap capacitance C14 and C23 forms differential capacitance structure.
Preferably, described first sensitive structure is arrangements of accelerometers, and described second sensitive structure is gyroscope arrangement; Or described first sensitive structure is gyroscope arrangement, described second sensitive structure is arrangements of accelerometers.
Preferably, described substrate is also provided with the air pressure via of through first cavity volume and the second cavity volume.
MEMS inertial sensor of the present utility model, substrate is positioned at the middle part of chip, at the upper and lower surface bonding sensitive structure respectively of substrate, this MEMS inertial sensor is made to have double-deck sensitive structure, thus improve the utilization factor of chip, improve the overall performance of MEMS inertial sensor, make sensitivity add one times, improve signal to noise ratio (S/N ratio); In other words, compare traditional MEMS inertial sensor, do not reducing on the basis of chip performance, reducing the size of MEMS chip further, to meet the miniaturization of electronic product.MEMS inertial sensor of the present utility model, adds the design margin between chip size and chip performance, can be applied to the MEMS inertia device that mems accelerometer, MEMS gyro instrument, MEMS resonator etc. have movable sensitive structure.
Inventor of the present utility model finds, in the prior art, the development comparative maturity of MEMS technology, technological ability is close to the limit, be difficult to the size of reducing chip again according to the requirement of system manufacturer further, and the space that chip performance continues to promote is also very little.Therefore, the technical assignment that the utility model will realize or technical matters to be solved are that those skilled in the art never expect or do not anticipate, therefore the utility model is a kind of new technical scheme.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present utility model, further feature of the present utility model and advantage thereof will become clear.
Accompanying drawing explanation
In the description combined and the accompanying drawing forming a part for instructions shows embodiment of the present utility model, and illustrate that one is used from and explains principle of the present utility model together with it.
Fig. 1 is the structural representation of the utility model MEMS inertial sensor.
Fig. 2 is the structural representation of MEMS inertial sensor in a kind of embodiment of the utility model.
Fig. 3 is the structural representation of MEMS inertial sensor in the another kind of embodiment of the utility model.
Fig. 4 is the structural representation of MEMS inertial sensor in the another kind of embodiment of the utility model.
Fig. 5 to Figure 12 is the step schematic diagram of the utility model MEMS inertial sensor manufacture method.
Embodiment
Various exemplary embodiment of the present utility model is described in detail now with reference to accompanying drawing.It should be noted that: unless specifically stated otherwise, otherwise positioned opposite, the numerical expression of the parts of setting forth in these embodiments and step and numerical value do not limit scope of the present utility model.
Illustrative to the description only actually of at least one exemplary embodiment below, never as any restriction to the utility model and application or use.
May not discuss in detail for the known technology of person of ordinary skill in the relevant, method and apparatus, but in the appropriate case, described technology, method and apparatus should be regarded as a part for instructions.
In all examples with discussing shown here, any occurrence should be construed as merely exemplary, instead of as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, once be defined in an a certain Xiang Yi accompanying drawing, then do not need to be further discussed it in accompanying drawing subsequently.
With reference to figure 1, a kind of MEMS inertial sensor that the utility model provides, it comprises substrate 1, and is separately fixed at the lid 2 of substrate 1 upper end, lower end, two lids 2 are fixed together with substrate 1, form respectively the first cavity volume, the second cavity volume that are positioned at substrate 1 both sides.This first cavity volume, the second cavity volume can be structures closed, wherein, be provided with the first sensitive structure 3 being positioned at the first cavity volume in the upper end of described substrate 1 by middle close binder 4, be provided with the second sensitive structure 6 being positioned at the second cavity volume in the lower end of described substrate 1 by middle close binder 4.
In the utility model, the first sensitive structure 3, second sensitive structure 6 is the movable device of inertial sensor, and it can be the structures well-known to those skilled in the art such as movable plate, and the mode of bonding such as can be adopted between its with substrate 1 to be connected; These movable plate are corresponding with respective fixed electorde, form capacitance structure respectively, are used for detecting outside inertial signal.Certainly, this sensitive structure can be also resistance-type or piezoelectric type, no longer illustrates at this.
In order to improve the sensitivity of sensor, first sensitive structure 3, second sensitive structure 6 can be grouped together, the part pole plate in the part pole plate in the first sensitive structure 3 and the second sensitive structure 6 is such as needed to be electrically connected in some environments, now, plated-through hole can be set on substrate 1, and in this plated-through hole filled conductive material 5, by this conductive material 5 can by being positioned at directly over plated-through hole, immediately below respective electrode plate be electrically connected.When the pole plate of upper and lower is in staggered distribution, that is, when certain needs the pole plate of connection away from plated-through hole, then need such as to arrange corresponding lead-in wire 9 in the mode of deposition on substrate 1, this lead-in wire 9 is connected together with the conductive material 5 in plated-through hole, thus is electrically connected with the pole plate away from plated-through hole by the pole plate being positioned at plated-through hole position.
This lead-in wire 9 can have identical material with conductive material 5.Substrate 1 of the present utility model can adopt single crystal silicon material, in order to ensure the insulation between these conductive components and substrate 1, at conductive material 5, arranges insulation course 7 between lead-in wire 9 and substrate 1.
MEMS inertial sensor of the present utility model, substrate 1 is positioned at the middle part of chip, forms a cavity volume respectively in its both sides, is used for installing sensitive structure.Wherein, the first sensitive structure 3 and the second sensitive structure 4 can be identical devices, are all such as mems accelerometer, MEMS gyro instrument or MEMS resonator; Also can adopt different parts, the first sensitive structure 3 such as, being arranged in the first cavity volume described in can be arrangements of accelerometers, and the second sensitive structure 6 being arranged in the second cavity volume can be gyroscope arrangement; Vice versa.Upper and lower two cavity volumes are completely isolated by substrate, according to the different demands of device to vacuum tightness, can design two cavity volumes.Such as, when the first sensitive structure 3 being arranged in the first cavity volume is arrangements of accelerometers, the first cavity volume can be atmospheric pressure state; When the second sensitive structure 6 being arranged in the second cavity volume is gyroscope arrangement, the second cavity volume is vacuum state.Like this, just mems accelerometer and MEMS gyro instrument can be integrated.
Certainly, if the sensitive structure of upper and lower two cavity volumes is consistent, such as, when the first sensitive structure 3, second sensitive structure 6 is all mems accelerometer, MEMS gyro instrument or MEMS resonator, can air pressure via be set on substrate 1, by the first cavity volume and the second cavity volume through, thus can ensure that the first cavity volume and the second cavity volume have identical vacuum tightness, thus ensure that the quality factor of sensitive structure in two cavity volumes are identical.
MEMS inertial sensor of the present utility model, substrate is positioned at the middle part of chip, at the upper and lower surface bonding sensitive structure respectively of substrate, this MEMS inertial sensor is made to have double-deck sensitive structure, thus improve the utilization factor of chip, improve the overall performance of MEMS inertial sensor, make sensitivity add one times, improve signal to noise ratio (S/N ratio); In other words, compare traditional MEMS inertial sensor, do not reducing on the basis of chip performance, reducing the size of MEMS chip further, to meet the miniaturization of electronic product.MEMS inertial sensor of the present utility model, adds the design margin between chip size and chip performance, can be applied to the MEMS inertia device that mems accelerometer, MEMS gyro instrument, MEMS resonator etc. have movable sensitive structure.
In the embodiment that the utility model one is concrete, with reference to figure 2, described first sensitive structure 3 comprises the first elastic beam (view does not provide), and to be connected with the first elastic beam and to be positioned at movable plate C1-1 30, the movable plate C1-2 31 of the first elastic beam both sides, this movable plate C1-1 30, movable plate C1-2 31 are a mass, are suspended at the top of substrate 1 by the first elastic beam; Described second sensitive structure 6 comprises the second elastic beam (view does not provide), and is connected with the second elastic beam and is positioned at movable plate C2-1 60, the movable plate C2-2 61 of the second elastic beam both sides; This movable plate C2-1 60, movable plate C2-2 61 are a mass, are suspended at the below of substrate 1 by the second elastic beam.Between mass, elastic beam, the concrete mode connected belongs to existing technology, no longer illustrates at this.
Wherein, be also provided with the fixed polar plate C3-1 80 forming C1 capacitance structure with movable plate C1-1 30 in the upper end of described substrate 1, and form the fixed polar plate C3-2 81 of C2 capacitance structure with movable plate C1-2 31; The lower end of described substrate 1 is provided with the fixed polar plate C4-1 82 forming C3 capacitance structure with movable plate C2-1 60, and forms the fixed polar plate C4-2 83 of C4 capacitance structure with movable plate C2-2 61.By the distance between change movable plate and fixed polar plate or just right area, realize the change of capacitance signal.By four capacitance structures of above-mentioned composition, the sensitivity of MEMS inertial sensor can be improved, improve the signal to noise ratio (S/N ratio) of MEMS inertial sensor.
In the embodiment that the utility model one is concrete, with reference to figure 2, described first sensitive structure 3, second sensitive structure 6 is translation structure, first sensitive structure 3, second sensitive structure 6 is such as subject to when the acceleration of X-axis or Y direction, wherein, C1 capacitance structure and C3 capacitance structure increase simultaneously or reduce, and C2 capacitance structure and C4 capacitance structure reduce simultaneously or increase.Like this, C1 capacitance structure and C3 capacitance structure can be formed overlap capacitance C13; C2 capacitance structure and C4 capacitance structure form overlap capacitance C24, and overlap capacitance C13 and C24 forms a pair differential capacitance structure, by differential detection circuit, the change of output signal detected.Simultaneously, when temperature in the external world and stress change, the strain that substrate 1 upper and lower surface produces is contrary, C1 capacitance structure, C3 capacitance structure lay respectively at the upper and lower surface of substrate 1, when being together in parallel by these two capacitance structures, then the strain that temperature or other interference aspect can be brought is offset; Based on identical reason, C2 capacitance structure, C4 capacitance structure are together in parallel, the strain that also temperature or other interference aspect can be brought is offset, thus makes last output both improve signal to noise ratio (S/N ratio), turn eliminates the error that temperature or other interference aspect are brought.
In the utility model, MEMS inertial sensor also can be Z axis accelerometer, now, first sensitive structure 3, second sensitive structure 6 of described MEMS inertial sensor is deflection structure, with reference to figure 3, wherein, the direction of described first sensitive structure 3 centre-of gravity shift is contrary with the direction of the second sensitive structure 6 centre-of gravity shift.
In the embodiment that the utility model one is concrete, the center of gravity deflection movable plate C1-1 30 of such as the first sensitive structure 3, and the center of gravity of the second sensitive structure 6 deflection movable plate C2-2 61.Above-mentioned eccentric manner can be realized by size, also can be realized by modes such as material, hollow out or counterweights, no longer illustrate at this.When the first sensitive structure 3, second sensitive structure 6 of said structure is subject to the acceleration of Z-direction, C1 capacitance structure and C3 capacitance structure increase simultaneously or reduce, and C2 capacitance structure and C4 capacitance structure reduce simultaneously or increase.Like this, C1 capacitance structure and C3 capacitance structure can be formed overlap capacitance C13; C2 capacitance structure and C4 capacitance structure form overlap capacitance C24, and overlap capacitance C13 and C24 forms a pair differential capacitance structure, by differential detection circuit, the change of output signal detected.Simultaneously, when temperature in the external world and stress change, the strain that substrate 1 upper and lower surface produces is contrary, C1 capacitance structure, C3 capacitance structure lay respectively at the upper and lower surface of substrate 1, after being together in parallel by these two capacitance structures, then the strain that temperature or other interference aspect can be brought is offset; Based on identical reason, C2 capacitance structure, C4 capacitance structure are together in parallel, the strain that also temperature or other interference aspect can be brought is offset, thus makes last output both improve signal to noise ratio (S/N ratio), turn eliminates the error that temperature or other interference aspect are brought.
At the utility model, another is implemented in structure, and the direction of described first sensitive structure 3 centre-of gravity shift is identical with the direction of the second sensitive structure 6 centre-of gravity shift; With reference to figure 4, the center of gravity of center of gravity deflection movable plate C1-1 30, second sensitive structure 6 of such as the first sensitive structure 3 is partial to movable pole piece C2-1 60.When the first sensitive structure 3, second sensitive structure 6 of said structure is subject to the acceleration of Z-direction, C1 capacitance structure and C4 capacitance structure increase simultaneously or reduce, and C2 capacitance structure and C3 capacitance structure reduce simultaneously or increase.Like this, C1 capacitance structure and C4 capacitance structure can be formed overlap capacitance C14; C2 capacitance structure and C3 capacitance structure form overlap capacitance C23, and overlap capacitance C14 and C23 forms a pair differential capacitance structure, by differential detection circuit, the change of output signal detected.
In this kind of situation, the fixed polar plate C3-1 80 in C1 capacitance structure is needed to couple together with the fixed polar plate C4-2 83 in C4 capacitance structure, because these two fixed polar plates are positioned at the diverse location of substrate, now, need on substrate, lay corresponding lead-in wire 9, couple together with the conductive material 5 in plated-through hole.
At the utility model, another is implemented in structure, and C1 capacitance structure and C2 capacitance structure can partner differential capacitance structure C12, by differential detection circuit, directly export, are outputed signal, be designated as Vout1; C3 capacitance structure and C4 capacitance structure can partner differential capacitance structure C34, by differential detection circuit, directly export, are outputed signal, be designated as Vout2; Vout1 and Vout2 is added, is averaged, obtains final output.The impact caused substrate 1 levels structure due to temperature and stress is contrary, so, by the addition of these two pairs of differential capacitance structures, the error that temperature and stress bring can be eliminated.
The utility model additionally provides a kind of manufacture method of MEMS inertial sensor, comprises the following steps:
A) multiple plated-through hole 10 is etched, with reference to figure 5 at the upper surface of substrate 1;
B) deposition or heat growth insulation course 7 on the upper surface of substrate 1 and the inwall of multiple plated-through hole 10, with reference to figure 6;
C) filled conductive material 5 in plated-through hole 10, in order to the convenience of technique, layer of conductive material 5 can be set simultaneously at plated-through hole 10, substrate 1 upper surface, with reference to figure 7, afterwards, again the conductive material 5 above substrate 1 is ground or etches away, retain the conductive material 5 in plated-through hole 10; In addition, can deposit on substrate 1 as required and etch the lead-in wire 9 being communicated with conductive material 5, with reference to figure 8;
D) deposit middle close binder 4 on substrate 1, and be etched into required form, the cavity moved after forming sensitive structure release, with reference to figure 9;
E) the first sensitive structure 3 is bonded on the middle close binder 4 of substrate 1, with reference to Figure 10, in concrete technique, can first sensitive structure layer is bonded on middle close binder 4, make it discharge by etching, form the first sensitive structure 3;
F) the first cavity volume closing the first sensitive structure 3 is formed on substrate 1, with reference to Figure 11 by fixing for lid 2;
G) substrate 1 is overturn 180 °, with reference to Figure 12, the another side of substrate 1 is processed, deposit middle close binder 4 on substrate 1, and etch, concrete refer step d);
H) the second sensitive structure 6 is bonded on the middle close binder 4 of substrate 1, concrete refer step e);
I) form the second cavity volume closing the second sensitive structure 6 on substrate 1 by fixing for lid 2, final formation has the MEMS inertial sensor of double-deck sensitive structure.
Described step a) in, plated-through hole 10 can be blind hole, now, in described step g) in, after substrate 1 is overturn 180 °, need substrate 1 to be thinned to plated-through hole 10 position, that is, plated-through hole 10 is exposed the surface of substrate 1, deposit middle close binder 4 on substrate 1 afterwards, and be etched into required form.
Although be described in detail specific embodiments more of the present utility model by example, it should be appreciated by those skilled in the art, above example is only to be described, instead of in order to limit scope of the present utility model.It should be appreciated by those skilled in the art, when not departing from scope and spirit of the present utility model, above embodiment can be modified.Scope of the present utility model is limited by claims.
Claims (8)
1. a MEMS inertial sensor, it is characterized in that: comprise substrate (1), and being separately fixed at the lid (2) of substrate (1) upper end, lower end, two lids (2) form with substrate (1) the first cavity volume, the second cavity volume that are positioned at substrate (1) both sides respectively; Be provided with by middle close binder (4) the first sensitive structure (3) being positioned at the first cavity volume in the upper end of described substrate (1), be provided with by middle close binder (4) the second sensitive structure (6) being positioned at the second cavity volume in the lower end of described substrate (1).
2. MEMS inertial sensor according to claim 1, it is characterized in that: wherein on described substrate (1), be provided with plated-through hole, described first sensitive structure (3) and the second sensitive structure (6) are by being connected through the conductive material (5) of plated-through hole or the lead-in wire (9) of connection conductive material (5).
3. MEMS inertial sensor according to claim 1, it is characterized in that: described first sensitive structure (3) comprises the first elastic beam, and be positioned at movable plate C1-1 (30), the movable plate C1-2 (31) of the first elastic beam both sides, described second sensitive structure (6) comprises the second elastic beam, and is positioned at movable plate C2-1 (60), the movable plate C2-2 (61) of the second elastic beam both sides; The upper end of described substrate (1) is provided with the fixed polar plate C3-1 (80) forming C1 capacitance structure with movable plate C1-1 (30), and forms the fixed polar plate C3-2 (81) of C2 capacitance structure with movable plate C1-2 (31); The lower end of described substrate (1) is provided with the fixed polar plate C4-1 (82) forming C3 capacitance structure with movable plate C2-1 (60), and forms the fixed polar plate C4-2 (83) of C4 capacitance structure with movable plate C2-2 (61).
4. MEMS inertial sensor according to claim 3, is characterized in that: described first sensitive structure (3), the second sensitive structure (6) are translation structure, and wherein, C1 capacitance structure and C3 capacitance structure form overlap capacitance C13; C2 capacitance structure and C4 capacitance structure form overlap capacitance C24, and overlap capacitance C13 and C24 forms differential capacitance structure.
5. MEMS inertial sensor according to claim 3, it is characterized in that: described first sensitive structure (3), the second sensitive structure (6) are deflection structure, wherein, the direction of described first sensitive structure (3) centre-of gravity shift is contrary with the direction of the second sensitive structure (6) centre-of gravity shift; C1 capacitance structure and C3 capacitance structure form overlap capacitance C13; C2 capacitance structure and C4 capacitance structure form overlap capacitance C24, and overlap capacitance C13 and C24 forms differential capacitance structure.
6. MEMS inertial sensor according to claim 3, it is characterized in that: described first sensitive structure (3), the second sensitive structure (6) are deflection structure, wherein, the direction of described first sensitive structure (3) centre-of gravity shift is identical with the direction of the second sensitive structure (6) centre-of gravity shift; C1 capacitance structure and C4 capacitance structure form overlap capacitance C14; C2 capacitance structure and C3 capacitance structure form overlap capacitance C23, and overlap capacitance C14 and C23 forms differential capacitance structure.
7. MEMS inertial sensor according to claim 1, is characterized in that: described first sensitive structure (3) is arrangements of accelerometers, and described second sensitive structure (6) is gyroscope arrangement; Or described first sensitive structure (3) is gyroscope arrangement, described second sensitive structure (6) is arrangements of accelerometers.
8. MEMS inertial sensor according to claim 1, is characterized in that: the air pressure via described substrate (1) being also provided with through first cavity volume and the second cavity volume.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520288415.3U CN204555991U (en) | 2015-05-06 | 2015-05-06 | A kind of MEMS inertial sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520288415.3U CN204555991U (en) | 2015-05-06 | 2015-05-06 | A kind of MEMS inertial sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204555991U true CN204555991U (en) | 2015-08-12 |
Family
ID=53831089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520288415.3U Expired - Fee Related CN204555991U (en) | 2015-05-06 | 2015-05-06 | A kind of MEMS inertial sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204555991U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104819730A (en) * | 2015-05-06 | 2015-08-05 | 歌尔声学股份有限公司 | MEMS inertial sensor and making method of same |
-
2015
- 2015-05-06 CN CN201520288415.3U patent/CN204555991U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104819730A (en) * | 2015-05-06 | 2015-08-05 | 歌尔声学股份有限公司 | MEMS inertial sensor and making method of same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104891418B (en) | MEMS pressure sensor, MEMS inertial sensor integrated morphology | |
| US10274512B2 (en) | Microelectromechanical sensor device with reduced stress sensitivity | |
| CN102482072B (en) | There is MEMS and the manufacture method thereof of stress isolation | |
| WO2017000501A1 (en) | Mems pressure sensing element | |
| US20110174074A1 (en) | Framed transducer device | |
| US9003886B2 (en) | Microelectromechanical systems devices and methods for the fabrication thereof | |
| CN207845152U (en) | Transducer module and electronic device | |
| CN107478862B (en) | Quartz vibrating beam accelerometer sensitive chip based on gold bonding | |
| TW201617618A (en) | MEMS apparatus with multiple chambers and method for manufacturing the same | |
| CN104819730A (en) | MEMS inertial sensor and making method of same | |
| CN103420321B (en) | Hybrid integrated component and method for the manufacture thereof | |
| CN105181186A (en) | Pressure sensing element and manufacturing method thereof | |
| CN113624991A (en) | Z-axis accelerometer | |
| CN217180964U (en) | Micro-electromechanical sensor device and electronic system | |
| CN111796119B (en) | Resonant acceleration sensor based on nano piezoelectric beam and preparation method thereof | |
| CN105182005A (en) | Low stress accelerometer | |
| US20170001857A1 (en) | Sensor element and method of manufacturing the same | |
| CN105043439A (en) | Sensor integration device and production method thereof | |
| CN104891419B (en) | A kind of MEMS inertial sensor and manufacture method thereof | |
| CN105115540B (en) | MEMS inertial sensor, humidity sensor integrating device and its manufacturing method | |
| CN204555991U (en) | A kind of MEMS inertial sensor | |
| CN105182003B (en) | Torsional pendulum type differential capacitance accelerometer and preparation method with buffer structure | |
| CN204758628U (en) | MEMS inertial sensor | |
| CN204675826U (en) | MEMS pressure sensor, MEMS inertial sensor integrated morphology | |
| CN104198763A (en) | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150812 Termination date: 20180506 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |