CN107478862B - Quartz vibrating beam accelerometer sensitive chip based on gold bonding - Google Patents
Quartz vibrating beam accelerometer sensitive chip based on gold bonding Download PDFInfo
- Publication number
- CN107478862B CN107478862B CN201710567179.2A CN201710567179A CN107478862B CN 107478862 B CN107478862 B CN 107478862B CN 201710567179 A CN201710567179 A CN 201710567179A CN 107478862 B CN107478862 B CN 107478862B
- Authority
- CN
- China
- Prior art keywords
- unit layer
- sealing ring
- sensitive
- protection unit
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
Abstract
A quartz vibrating beam accelerometer sensitive chip based on gold bonding relates to the field of quartz vibrating beam accelerometer sensitive chip processing; each sensitive chip comprises a sensitive unit layer, an upper protection unit layer and a lower protection unit layer; the upper protection unit layer is arranged on the upper surface of the sensitive unit layer, and the lower protection unit layer is arranged on the upper surface of the sensitive unit layer; the upper surface of the sensitive unit layer is provided with a first sealing ring, and the lower surface of the sensitive unit layer is fixedly provided with a second sealing ring; the lower surface of the upper protection unit layer is fixedly provided with a third sealing ring; a fourth sealing ring is fixedly arranged on the upper surface of the lower protection unit layer; one side of the upper protection unit layer is symmetrically provided with two square holes; two bosses are symmetrically arranged at corresponding positions on the upper surface of the lower protection unit layer; the invention effectively solves the problem that the airtight packaging and the internal electrode leading-out are difficult to be compatible; meanwhile, the method has excellent transportability, and can be popularized to the preparation process of other MEMS devices which take quartz, silicon, glass and other materials as base materials.
Description
Technical Field
The invention relates to the field of airtight packaging of quartz vibrating beam accelerometer sensitive chips, in particular to a quartz vibrating beam accelerometer sensitive chip based on gold bonding.
Background
The quartz vibration beam accelerometer is a sensor which converts the measured acceleration into the natural frequency change of the quartz vibration beam by utilizing the resonance type measuring principle, and has the advantages of wide range, high precision, small volume, low power consumption, quasi-digital output and the like, so that the quartz vibration beam accelerometer is widely applied to the fields of low-cost combined navigation systems, antenna platform stabilizing systems, petroleum drilling, seismic measurement and the like.
The quartz vibrating beam accelerometer is structurally classified from a sensitive chip, and comprises an integrated type and a split type, wherein the split type is mainly formed by bonding a quartz vibrating beam and a metal pendulous reed structure, a typical product of the quartz vibrating beam accelerometer is RBA500 of Honeywell company in America, and the stability and the repeatability of the quartz vibrating beam accelerometer in the full-temperature range are limited due to the difference of thermal expansion coefficients of a quartz material and the metal pendulous reed; the integrated structure is mainly characterized in that the vibration beam and the swinging piece are prepared on the same quartz sensitive chip through an MEMS (micro-electromechanical systems) processing technology, has the advantages of small volume, low cost, good repeatability and the like, is an important development direction of the quartz vibration beam accelerometer, and typical products of the integrated structure are A100 of Thales company in France and AD301 of Sagem company; patent 201420020970.3 further has increased the spacing unit of upper and lower protection on the basis of the sensitive chip structure of traditional classic integral type quartzy roof beam accelerometer that shakes, aims at realizing the unity of high sensitivity and abominable mechanical environment adaptability, and this scheme is the mainstream structure of the quartzy roof beam accelerometer that shakes of integral type at present domestic.
The existing airtight packaging process of the integrated quartz vibrating beam accelerometer sensitive chip takes the chip as a unit and comprises the working procedures of multilayer microstructure assembly, surface mounting, lead wire, sealing and the like, and compared with the MEMS front processing process taking the sensitive chip as a unit, such as photoetching, etching and the like, the production and screening efficiency of the packaging process is limited in space; the sensitive chip microstructure assembly mainly comprises the assembly of a sensitive unit and an upper protection unit and a lower protection unit, the repeatability and the long-term reliability of the sensitive chip are limited by adopting an epoxy adhesive bonding mode at present, and meanwhile, because the epoxy adhesive has fluidity before curing, sideslip can be caused among layers, so that the alignment precision among the layers is poor; the sealing of the sensitive chip can reduce the interference of the environment and ensure that the chip works in a stable resonance state, the Q value of the sensitive chip is further improved by adopting vacuum sealing by some manufacturers such as Thales, Sagem and the like in France to realize excellent zero-bias stability and resolution index, the packaging method is mainly based on a metal tube shell vacuum welding process, the technology maturity of the method is high, but the size of the metal tube shell obtained based on cutting or stamping is larger, and the miniaturization and integration advantages of the integrated quartz vibrating beam accelerometer sensitive chip are obviously weakened.
Aiming at the defects of the traditional chip-level packaging process, the french aerospace agency ONERA proposes a sensitive chip-level packaging process based on a quartz-silicon fusion bonding technology, namely, the sensitive chip packaging is realized by taking a sensitive chip as a unit, the advantage of the MEMS batch production is expanded to the packaging stage, and meanwhile, the quartz sensitive chip and the silicon microchip can be mixed and integrated, but the scheme has three main problems: firstly, the quartz-silicon fusion bonding technology has extremely high requirements on the surface roughness and cleanliness of a sensitive chip, and the sensitive chip after the previous process is difficult to meet; secondly, the difference between the thermal expansion coefficients of quartz and silicon materials is large, so that the full-temperature stability of the sensitive chip is limited; third, the contradiction between the internal electrode lead-out and vacuum sealing is not easily solved, i.e., the internal electrode passing through the quartz-silicon bonded sealing ring will create a challenge to low leak rate vacuum sealing.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides the quartz vibrating beam accelerometer sensitive chip based on gold-gold bonding, and effectively solves the problem that the airtight packaging and the internal electrode leading-out are difficult to be compatible; batch processing is realized through a wafer level bonding process; meanwhile, the method has excellent transportability, and can be popularized to the preparation process of other MEMS devices which take quartz, silicon, glass and other materials as base materials.
The above purpose of the invention is realized by the following technical scheme:
a quartz vibrating beam accelerometer sensitive chip based on gold bonding comprises a sample wafer, an alignment mark and n sensitive chips; wherein, the sample wafer is in a round thin plate structure; the n sensitive chips are adjacently and fixedly arranged in the middle of the sample wafer; the four corners of the sample wafer are respectively provided with an alignment mark; wherein n is a positive integer not less than 10;
each sensitive chip comprises a sensitive unit layer, an upper protection unit layer, a lower protection unit layer, a first sealing ring, a second sealing ring, a third sealing ring, a fourth sealing ring, a square hole and a boss; the sensitive unit layers are of square thin plate structures and are horizontally arranged in the middle; the upper protection unit layer and the lower protection unit layer are the same as the sensitive unit layers in shape, the upper protection unit layers are arranged on the upper surfaces of the sensitive unit layers, and the lower protection unit layers are arranged on the upper surfaces of the sensitive unit layers; the periphery of the upper surface of the sensitive unit layer is fixedly provided with a first sealing ring; the periphery of the lower surface of the sensitive unit layer is fixedly provided with a second sealing ring; the periphery of the lower surface of the upper protection unit layer is fixedly provided with a third sealing ring; a fourth sealing ring is fixedly arranged on the upper surface of the lower protection unit layer; the first sealing ring is in contact with the third sealing ring; the second sealing ring is in contact with the fourth sealing ring; one side of the upper protection unit layer is symmetrically provided with two square holes; two bosses are symmetrically arranged at corresponding positions on the upper surface of the lower protection unit layer.
In the quartz vibrating beam accelerometer sensitive chip based on gold bonding, the middle part of the sensitive unit layer is provided with a flexible beam, a core spring mass block and a square frame; wherein, the square frame is horizontally arranged; the core spring mass block is fixed in the middle of the square frame; the flexible beam is in a rectangular strip structure; the flexible beam is positioned between the sensitive core spring mass and the square frame.
In the quartz vibrating beam accelerometer sensitive chip based on gold-gold bonding, the first sealing ring, the second sealing ring, the third sealing ring and the fourth sealing ring are made of chrome-gold material, the thickness is more than 100nm, the width is more than 5 mu m, and the surface roughness R isqLess than 10 nm.
In the quartz vibrating beam accelerometer sensitive chip based on gold bonding, the square hole is a through hole; rectangular grooves are formed in the lower surface of the upper protection unit layer and the upper surface of the lower protection unit layer, and the depth of each rectangular groove is not less than 5 microns.
In the quartz vibrating beam accelerometer sensitive chip based on gold bonding, the lower surface of the square hole is fixedly provided with an electrode sealing ring; electrodes are fixedly arranged at the positions of the square holes corresponding to the upper surfaces of the sensitive unit layers; a first supporting metal layer is fixedly arranged on the lower surface of the sensitive unit layer corresponding to the position of the electrode; and a second support metal layer is fixedly arranged at the position, corresponding to the first support metal layer, of the upper surface of the lower protection unit layer.
In the quartz vibrating beam accelerometer sensitive chip based on gold bonding, the upper surface of the electrode is fixedly provided with the lead, and the lead extends out of the upper surface of the upper protection unit layer along the square hole.
In the quartz vibrating beam accelerometer sensitive chip based on gold bonding, the lower surface of the square hole is fixedly provided with a conducting electrode to realize sealing; filling metal materials in the square holes; a welding disc is fixedly arranged on the upper surface of the square hole to realize sealing; and the upper surface of the bonding pad is fixedly provided with a lead.
In the quartz vibrating beam accelerometer sensitive chip based on gold bonding, the thickness of the first supporting metal layer is consistent with that of the fourth sealing ring; the thickness of the second support metal layer is consistent with that of the second sealing ring; the thickness of the electrode sealing ring is consistent with that of the third sealing ring; the thickness of the conducting electrode and the conducting electrode is consistent with that of the first sealing ring.
Compared with the prior art, the invention has the following advantages:
(1) the gold sensitive chip bonding technology adopted by the invention has lower requirements on the roughness and cleanliness of the surface of the sensitive chip, and the gold sensitive chip bonding technology has the advantages of less quantity of process parameters, strong process robustness and easy realization of batch production;
(2) the bonding between the quartz sensitive chips is realized, the requirement of low-stress packaging is met through plasma activation, and the full-temperature environment adaptability of the sensitive chips is greatly improved;
(3) the invention directly uses the chrome gold corrosion masking film as an intermediate medium to finish the packaging process without additionally plating metal, so the invention has good compatibility with the prior quartz MEMS process;
(4) the invention ensures the leading-out of the internal electrode while realizing the airtight packaging, and effectively avoids the contradiction that the internal electricity leading-out and the low-leakage-rate airtight packaging are difficult to be compatible in other bonding processes;
(5) the invention has good portability, can be used for packaging integrated quartz vibrating beam accelerometer sensitive chips, is also an ideal choice for other quartz-based sensitive chips, and comprises a quartz resonance manometer and a quartz comb capacitance accelerometer, a quartz tuning fork gyroscope and the like.
Drawings
FIG. 1 is a schematic view of an airtight package structure of a quartz vibrating beam accelerometer sensitive chip according to the present invention;
FIG. 2 is a sectional view of a method 1 for leading out electrodes of a sensitive chip of a quartz vibrating beam accelerometer according to the invention;
FIG. 3 is a cross sectional view of a method 2 for leading out electrodes of a sensitive chip of a quartz vibrating beam accelerometer according to the invention;
FIG. 4 is a schematic diagram of a quartz vibrating beam accelerometer sensitive chip sample wafer according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and specific examples:
as shown in fig. 4, which is a schematic diagram of a sample wafer of a quartz vibrating beam accelerometer sensitive chip, it can be known that a quartz vibrating beam accelerometer sensitive chip based on gold bonding is characterized in that: the sensitive chip comprises a sample 20, an alignment mark 21 and n sensitive chips; wherein, the sample 20 is a round thin plate structure; the n sensitive chips are adjacently and fixedly arranged in the middle of the sample wafer 20; the four corners of the sample 20 are respectively provided with an alignment mark 21; wherein n is a positive integer not less than 10;
as shown in fig. 1, which is a schematic view of an airtight packaging structure of a sensitive chip of a quartz vibrating beam accelerometer, it can be seen that each sensitive chip includes a sensitive unit layer 1, an upper protection unit layer 2, a lower protection unit layer 3, a first sealing ring 4, a second sealing ring 5, a third sealing ring 6, a fourth sealing ring 7, a square hole 8 and a boss 9; the sensitive unit layer 1 is of a square thin plate structure, and the sensitive unit layer 1 is horizontally arranged in the middle; the upper protection unit layer 2 and the lower protection unit layer 3 are both the same as the sensitive unit layer 1 in shape, the upper protection unit layer 2 is arranged on the upper surface of the sensitive unit layer 1, and the lower protection unit layer 3 is arranged on the upper surface of the sensitive unit layer 1;
compare with traditional integral type quartz vibration beam accelerometer, metal seal ring structure has all been arranged to every layer of structure surface peripheral region for follow-up airtight encapsulation of realization specifically is: the periphery of the upper surface of the sensitive unit layer 1 is fixedly provided with a first sealing ring 4; the periphery of the lower surface of the sensitive unit layer 1 is fixedly provided with a second sealing ring 5; the periphery of the lower surface of the upper protection unit layer 2 is fixedly provided with a third sealing ring 6; the upper surface of the lower protection unit layer 3 is fixedly provided with a fourth sealing ring 7; the first sealing ring 4 is in contact with the third sealing ring 6; the second sealing ring 5 is in contact with the fourth sealing ring 7; the first sealing ring 4, the second sealing ring 5, the third sealing ring 6 and the fourth sealing ring 7 are made of chrome-gold materials, the thickness is more than 100nm, the width is more than 5 mu m, and the surface roughness RqLess than 10 nm. One side of the upper protection unit layer 2 is symmetrically provided with two square holes 8; two bosses 9 are symmetrically arranged at corresponding positions on the upper surface of the lower protection unit layer 3.
Therefore, the core spring mass block 11 can be sealed in a cavity formed by the upper and lower protection unit layers 2 and 3 through the sealing rings 4-7; the upper surface of the upper protection unit layer 2 and the lower surface of the lower protection unit layer 3 are not used for sealing, so that a metal sealing ring structure is not arranged; the square hole 8 positioned on the upper protection unit is a through hole and is mainly used for providing a channel for leading out an electric signal of the sensitive unit layer 1, and the structural detail is explained in detail in the attached figure 2; the boss 9 positioned on the lower protection unit is mainly used for providing auxiliary support for the sensitive unit layer 1 in the bonding or lead welding process so as to prevent the structure of the sensitive unit layer 1 from being damaged;
the middle part of the sensitive unit layer 1 is provided with a flexible beam 10, a core spring mass block 11 and a square frame; wherein, the square frame is horizontally arranged; the core spring mass block 11 is fixed in the middle of the square frame; the flexible beam 10 is a rectangular strip structure; the flexible beam 10 is located between the sense core spring mass 11 and the square frame. The flexible beam 10 located on the sensing unit layer 1 is used for realizing flexible connection between the core spring mass block 11 and the peripheral sealing ring area of the sensing unit layer 1, and through flexible design, the flexible beam 10 plays a role in isolating packaging stress.
The processing technology of the 1-3 layer structure of the sensitive chip is basically consistent with that of the sensitive chip of the traditional integrated quartz vibrating beam accelerometer, namely, a primary double-sided chrome gold masking film photoetching patterning technology is combined with a quartz anisotropic wet etching process to obtain a chip body structure with 1-3 layers, a secondary chrome gold masking film photoetching patterning technology is used for further obtaining a surface piezoelectric electrode, the existing chrome gold masking film is used as a base material for the sealing rings 4-7, in conclusion, the metal sealing rings 4-7 for realizing airtight packaging and the structures of the square holes 8, the bosses 9 and the beams 10 are added on the basis of the traditional integrated quartz vibrating beam accelerometer sensitive chip, and meanwhile, the processing process steps and the complexity of the sensitive chip are not increased.
As shown in fig. 2, which is a cross-sectional view of a quartz vibrating beam accelerometer sensitive chip electrode lead-out method 1, it can be seen that an electrode sealing ring 13 is fixedly installed on the lower surface of a square hole 8; an electrode 14 is fixedly arranged at the position of the upper surface of the sensitive unit layer 1 corresponding to the square hole 8; a first supporting metal layer 16 is fixedly arranged on the lower surface of the sensitive unit layer 1 corresponding to the position of the electrode 14; the upper surface of the lower protection unit layer 3 is fixedly provided with a second support metal layer 15 corresponding to the position of the first support metal layer 16; the upper surface of the electrode 14 is fixedly provided with a lead 17, and the lead 17 extends out of the upper surface of the upper protective unit layer 2 along the square hole 8.
The sensitive unit layer 1 is essentially a quartz crystal resonator sensitive to external acceleration, and the quartz crystal resonator is driven by square waves or sine waves to work in a resonance state, so that the problem of leading out of the electrodes 14 of the sensitive unit layer is solved. As described above, the core spring mass block 11 in the sensitive unit layer 1 is sealed in the cavity formed by the upper and lower protective unit layers 2 and 3 through the metal first sealing rings 4-7 positioned on the sensitive chips 1-3 layers, and if a square hole 8 is directly prepared on the structure of the upper protective unit layer 2, the airtight cavity is damaged, so that the electrode leading-out method 1 of the invention introduces the electrode sealing ring 13 which is positioned around the square hole 8 on the lower surface of the upper protective unit layer 2 and is bonded with the electrode 14 of the sensitive unit layer 1, thereby realizing the isolation of the square hole 8 and the sealed cavity, leading out a lead 17 through the square hole 8, wherein the base material and the thickness of the electrode sealing ring 13 are consistent with those of the third sealing ring 6, the width is usually more than 5 μm, and the electrode sealing ring 13 and the third sealing ring 6 are processed simultaneously and are bonded with the sensitive unit layer 1 simultaneously with the third sealing. As mentioned above, the bosses 9 in the lower protection unit layer 3 are mainly used for providing auxiliary support for the sensitive unit layer 1 in the bonding process and the lead welding process, the surfaces of the bosses 9 and the corresponding areas of the lower surface of the sensitive unit layer 1 respectively include the second support metal layer 15 and the first support metal layer 16, the base materials and thicknesses of the support metal layers 15 and 16 are consistent with those of the sealing rings on the corresponding surfaces, the widths of the support metal layers are generally larger than those of the electrodes 14 of the sensitive unit layer 1 to provide effective support, and the support metal layers 15 and 16 and the sealing rings on the corresponding surfaces are processed simultaneously and are bonded simultaneously with the sealing rings on the corresponding surfaces.
As shown in fig. 3, which is a cross-sectional view of a quartz vibrating beam accelerometer sensitive chip electrode lead-out method 2, it can be seen that a conducting electrode 18 is fixedly installed on the lower surface of a square hole 8 to realize sealing; the square hole 8 is filled with metal materials; a mounting pad 19 is fixed on the upper surface of the square hole 8 to realize sealing; the lead 17 is fixedly mounted on the upper surface of the pad 19.
Different from the method 1, the method 2 comprises the following specific steps: the square hole 8 is filled with metal through an electroplating hole sealing process, the bottom of the square hole 8 on the lower surface of the upper protection unit layer 2 and the periphery of the square hole are provided with the conducting electrode 18, the conducting electrode 18 is connected with the metal filled in the square hole 8, the base material and the thickness of the conducting electrode 18 are consistent with those of the third sealing ring 6, the width of the conducting electrode 18 is usually larger than 5 microns, the conducting electrode 18 and the third sealing ring 6 are processed simultaneously, and the conducting electrode 18 and the third sealing ring 6 are bonded with the sensitive unit layer 1 simultaneously. Go up the 8 tops in protective unit layer 2 upper surface square hole and arrange pad 19 around it, pad 19 and 8 intussuseptions in square hole are filled with the metal and are linked to each other, and lead wire 17 passes through pad 19 and realizes and sensitive unit layer 1 electrode 14 intercommunication, and 19 substrates of pad and thickness are the same with third sealing ring 6, extend to the regional above the third sealing ring 6 of protective unit layer 2, ensure that lead wire welding point bottom possesses effective structural support, and pad 19 and third sealing ring 6 simultaneous processing obtain.
The method 1 and the method 2 have the advantages that the method 1 has no extra requirements on the processing of a 3-layer structure of a sensitive chip, basically inherits the preparation process of the sensitive chip of the traditional integrated quartz vibrating beam accelerometer except for the bonding process, but needs to realize the effective isolation of the square hole 8 and the sealed cavity, not only puts requirements on the air tightness of the sealing rings 4-7, but also needs to ensure the air tightness of the electrode sealing ring 13, and thus puts high requirements on the quality and the reliability of the gold bonding process; in the method 2, the square hole 8 electroplating hole sealing process needs to be realized in the upper protection unit layer 2, so that the process steps are increased, but only the air tightness of the sealing rings 4-7 needs to be ensured, no special requirements are required on the bonding quality of the electrodes 14 and the conducting electrodes 18 of the sensitive unit layer 1, and the electrical connection can be ensured.
The thickness of the first support metal layer 15 is consistent with that of the fourth seal ring 7; the thickness of the second support metal layer 16 is consistent with the thickness of the second seal ring 5; the thickness of the electrode sealing ring 13 is consistent with that of the third sealing ring 6; the via electrode 14 and the via electrode 18 have a thickness corresponding to the thickness of the first seal ring 4.
According to the invention, a metal sealing ring and an electric signal lead-out square hole structure are added on the basis of an upper protection unit, a lower protection unit and a sensitive unit layer of a sensitive chip of a classical integrated quartz vibrating beam accelerometer, and the airtight packaging of the sensitive chip is realized by utilizing a gold wafer bonding technology based on the improved structure; two electrode leading-out methods based on an electrode sealing ring structure and a through hole filling process are provided, aiming at solving the contradiction between airtight packaging and internal electrode leading-out; the packaging process can obtain a three-layer bonding sheet, and a single sensitive chip can be finally obtained through a wafer level probe screening and a wafer scribing process.
Those skilled in the art will appreciate that those matters not described in detail in the present specification are well known in the art.
Claims (4)
1. The utility model provides a quartzy vibrating beam accelerometer sensitive chip based on gold bonding which characterized in that: the sensitive chip comprises a sample wafer (20), an alignment mark (21) and n sensitive chips; wherein, the sample wafer (20) is in a round thin plate structure; the n sensitive chips are adjacently and fixedly arranged in the middle of the sample wafer (20); the four corners of the sample wafer (20) are respectively provided with an alignment mark (21); wherein n is a positive integer not less than 10;
each sensitive chip comprises a sensitive unit layer (1), an upper protection unit layer (2), a lower protection unit layer (3), a first sealing ring (4), a second sealing ring (5), a third sealing ring (6), a fourth sealing ring (7), a square hole (8) and a boss (9); the sensitive unit layer (1) is of a square thin plate structure, and the sensitive unit layer (1) is horizontally arranged in the middle; the upper protection unit layer (2) and the lower protection unit layer (3) are the same as the sensitive unit layer (1) in shape, the upper protection unit layer (2) is arranged on the upper surface of the sensitive unit layer (1), and the lower protection unit layer (3) is arranged on the upper surface of the sensitive unit layer (1); the periphery of the upper surface of the sensitive unit layer (1) is fixedly provided with a first sealing ring (4); the periphery of the lower surface of the sensitive unit layer (1) is fixedly provided with a second sealing ring (5); the periphery of the lower surface of the upper protection unit layer (2) is fixedly provided with a third sealing ring (6); a fourth sealing ring (7) is fixedly arranged on the upper surface of the lower protection unit layer (3); the first sealing ring (4) is contacted with the third sealing ring (6); the second sealing ring (5) is in contact with the fourth sealing ring (7); one side of the upper protection unit layer (2) is symmetrically provided with two square holes (8); two bosses (9) are symmetrically arranged at corresponding positions on the upper surface of the lower protection unit layer (3);
the first sealing ring (4), the second sealing ring (5), the third sealing ring (6) and the fourth sealing ring (7) are made of chrome-gold materials, the thickness is more than 100nm, the width is more than 5 mu m, and the surface roughness RqLess than 10 nm;
the square hole (8) is a through hole; rectangular grooves (12) are formed in the lower surface of the upper protection unit layer (2) and the upper surface of the lower protection unit layer (3), and the depths of the rectangular grooves (12) are not less than 5 micrometers;
an electrode sealing ring (13) is fixedly arranged on the lower surface of the square hole (8); an electrode (14) is fixedly arranged at the position of the upper surface of the sensitive unit layer (1) corresponding to the square hole (8); a first supporting metal layer (16) is fixedly arranged on the lower surface of the sensitive unit layer (1) corresponding to the position of the electrode (14); a second supporting metal layer (15) is fixedly arranged on the upper surface of the lower protection unit layer (3) corresponding to the position of the first supporting metal layer (16);
the thickness of the first support metal layer (15) is consistent with that of the fourth sealing ring (7); the thickness of the second support metal layer (16) is consistent with that of the second sealing ring (5); the thickness of the electrode sealing ring (13) is consistent with that of the third sealing ring (6); the thickness of the conducting electrode (14) and the conducting electrode (18) is consistent with that of the first sealing ring (4).
2. The quartz vibrating beam accelerometer sensitive chip based on gold bonding of claim 1, wherein: the middle part of the sensitive unit layer (1) is provided with a flexible beam (10), a core spring mass block (11) and a square frame; wherein, the square frame is horizontally arranged; the core spring mass block (11) is fixed in the middle of the square frame; the flexible beam (10) is of a rectangular strip structure; the flexible beam (10) is positioned between the sensitive core spring mass (11) and the square frame.
3. The quartz vibrating beam accelerometer sensitive chip based on gold bonding of claim 2, wherein: and a lead (17) is fixedly arranged on the upper surface of the electrode (14), and the lead (17) extends out of the upper surface of the upper protection unit layer (2) along the square hole (8).
4. The quartz vibrating beam accelerometer sensitive chip based on gold bonding of claim 3, wherein: a conducting electrode (18) is fixedly arranged on the lower surface of the square hole (8) to realize sealing; the square hole (8) is filled with metal materials; the upper surface of the square hole (8) is fixedly provided with a bonding pad (19) for realizing sealing; a lead (17) is fixedly mounted on the upper surface of the pad (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710567179.2A CN107478862B (en) | 2017-07-12 | 2017-07-12 | Quartz vibrating beam accelerometer sensitive chip based on gold bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710567179.2A CN107478862B (en) | 2017-07-12 | 2017-07-12 | Quartz vibrating beam accelerometer sensitive chip based on gold bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107478862A CN107478862A (en) | 2017-12-15 |
| CN107478862B true CN107478862B (en) | 2020-05-12 |
Family
ID=60595702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710567179.2A Active CN107478862B (en) | 2017-07-12 | 2017-07-12 | Quartz vibrating beam accelerometer sensitive chip based on gold bonding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107478862B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108717206B (en) * | 2018-05-31 | 2019-11-26 | 中国船舶重工集团公司第七0七研究所 | A kind of quartz pendulous reed and metal spring Combined heavy force sensor |
| CN109188023A (en) * | 2018-08-30 | 2019-01-11 | 太原理工大学 | Cantilever type micro acceleration sensor is from suspending encapsulating structure |
| CN109765404B (en) * | 2018-12-28 | 2020-03-17 | 西安交通大学 | Accelerometer chip based on QoS technology, processing technology and accelerometer |
| CN111137850B (en) * | 2019-11-28 | 2023-07-14 | 北京自动化控制设备研究所 | Method for realizing low-stress sensitive structure surface mounting technology |
| CN111121843B (en) * | 2019-12-18 | 2021-03-02 | 上海交通大学 | Integrated packaging structure and packaging method of surface acoustic wave sensor |
| CN111024984A (en) * | 2019-12-20 | 2020-04-17 | 北京航天控制仪器研究所 | Method for manufacturing all-silicon sandwich micro-accelerometer |
| CN111122904B (en) * | 2019-12-20 | 2022-05-24 | 北京航天控制仪器研究所 | Method for manufacturing sandwich accelerometer microstructure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033647A (en) * | 2012-12-25 | 2013-04-10 | 中国电子科技集团公司第二十六研究所 | Closed-loop control type accelerometer |
| CN203643470U (en) * | 2014-01-14 | 2014-06-11 | 中国电子科技集团公司第二十六研究所 | Quartz vibrating beam accelerometer |
| CN106134431B (en) * | 2011-12-05 | 2014-10-22 | 北京遥测技术研究所 | A kind of protective device of quartz micro mechanical accelerometer sensitive structure and processing method |
| CN104133079A (en) * | 2014-07-23 | 2014-11-05 | 北京遥测技术研究所 | Manufacturing method for quartz comb teeth capacitive accelerometer |
| US9784758B2 (en) * | 2010-03-31 | 2017-10-10 | Honeywell International Inc. | Resonating beam accelerometer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3969442B2 (en) * | 2005-09-26 | 2007-09-05 | エプソントヨコム株式会社 | Pressure sensor |
| JP2011141152A (en) * | 2010-01-06 | 2011-07-21 | Seiko Epson Corp | Acceleration sensor and accelerometer |
| CN102768290B (en) * | 2012-05-31 | 2014-04-09 | 北京时代民芯科技有限公司 | MEMS (micro-electrochemical systems) accelerometer and production method thereof |
-
2017
- 2017-07-12 CN CN201710567179.2A patent/CN107478862B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9784758B2 (en) * | 2010-03-31 | 2017-10-10 | Honeywell International Inc. | Resonating beam accelerometer |
| CN106134431B (en) * | 2011-12-05 | 2014-10-22 | 北京遥测技术研究所 | A kind of protective device of quartz micro mechanical accelerometer sensitive structure and processing method |
| CN103033647A (en) * | 2012-12-25 | 2013-04-10 | 中国电子科技集团公司第二十六研究所 | Closed-loop control type accelerometer |
| CN203643470U (en) * | 2014-01-14 | 2014-06-11 | 中国电子科技集团公司第二十六研究所 | Quartz vibrating beam accelerometer |
| CN104133079A (en) * | 2014-07-23 | 2014-11-05 | 北京遥测技术研究所 | Manufacturing method for quartz comb teeth capacitive accelerometer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107478862A (en) | 2017-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107478862B (en) | Quartz vibrating beam accelerometer sensitive chip based on gold bonding | |
| CN108507709B (en) | Preparation method of resonant pressure sensor | |
| CN105784189B (en) | Si-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation | |
| CN106124117B (en) | A kind of double cavity pressure meter chips and its manufacturing process | |
| JP4176849B2 (en) | Sensor manufacturing method | |
| CN100552453C (en) | Symmetry straight beam structure condenser type micro-acceleration sensor and preparation method thereof | |
| Zou et al. | Design and fabrication of silicon condenser microphone using corrugated diaphragm technique | |
| CN102374909A (en) | Micromachine-based electromagnetic excitation resonant pressure sensor | |
| CN108254106B (en) | Preparation method of silicon-glass-silicon four-layer structure resonant MEMS pressure sensor | |
| CN103115720B (en) | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure | |
| CN103105248B (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
| CN109485011B (en) | MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process | |
| CN107512700B (en) | A kind of production method of central supported formula MEMS chip encapsulating structure | |
| US7992442B2 (en) | Component and method for its manufacture | |
| CN111796119B (en) | Resonant acceleration sensor based on nano piezoelectric beam and preparation method thereof | |
| CN109883581B (en) | Cantilever beam type differential resonance pressure sensor chip | |
| CN207265035U (en) | A kind of accurate floated MEMS chip encapsulating structure of central supported | |
| CN103512698A (en) | Capacitance type absolute pressure sensor and manufacturing method thereof | |
| CN103234669B (en) | Pressure sensor utilizing electrostatic negative stiffness and production method of pressure sensor | |
| CN105182003B (en) | Torsional pendulum type differential capacitance accelerometer and preparation method with buffer structure | |
| CN113945732A (en) | Graphene double-shaft differential resonant accelerometer | |
| CN104198762A (en) | Eight-beam symmetrical silicon micro-accelerometer | |
| CN207622713U (en) | Surface acoustic wave high-temp strain sensor chip and its application structure based on SOI and piezoelectric membrane | |
| CN103217228B (en) | Temperature sensor based on capacitive micromachined ultrasonic transducer (CMUT) and preparation and application method of temperature sensor | |
| CN102928132B (en) | Tunnel reluctance pressure transducer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |