CN204504984U - Work-table of chemicomechanical grinding mill - Google Patents
Work-table of chemicomechanical grinding mill Download PDFInfo
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- CN204504984U CN204504984U CN201420463227.5U CN201420463227U CN204504984U CN 204504984 U CN204504984 U CN 204504984U CN 201420463227 U CN201420463227 U CN 201420463227U CN 204504984 U CN204504984 U CN 204504984U
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Abstract
The utility model provides a kind of work-table of chemicomechanical grinding mill, comprise the cleaning of grinding table, grinding pad, grinding fluid conveying device, lapping head and grinding head and wafer handling unit, described lapping head is provided with infrared transmitter, described grinding head cleaning and wafer handling unit are provided with the described calibration testing mark corresponding with infrared transmitter, when the IR that infrared transmitter is launched is irradiated on calibration testing mark, lapping head cleans with grinding head and wafer handling unit is aimed at.By infrared transmitter and the point-to-point position correction of calibration testing mark, very directly perceived, easy go to calibrate the position of lapping head to grinding head cleaning and wafer handling unit, farthest can ensure that lapping head does not exist deviation to the position of grinding head cleaning and wafer handling unit, greatly improve the installation of work-table of chemicomechanical grinding mill and repair engine efficiency, thus ensureing normal work and the product quality of work-table of chemicomechanical grinding mill.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, particularly relates to a kind of work-table of chemicomechanical grinding mill.
Background technology
During wafer manufactures, along with the upgrading of process technique, the reducing of wire and grid size, the requirement of photoetching (Lithography) technology to the planarization (Non-uniformity) of crystal column surface is more and more higher.Cmp or chemically mechanical polishing (Chemical Mechanical Polishing, hereinafter referred to as CMP) be uniquely can realize the planarized technology of surface global in current machining, it combines chemical attack effect and mechanical removal effect.
The cmp technological synthesis advantage of chemical grinding and mechanical lapping.Simple chemical grinding, surface accuracy is higher, damages low, and integrality is good, is not easy to occur surface/sub-surface damage, but grinding rate is comparatively slow, and material removal efficiency is lower, can not revise surperficial profile precision, and grinding comparison of coherence is poor.Simple mechanical lapping, grinding uniformity is good, and surface smoothness is high, and grinding efficiency is high, but easily occurs superficial layer/sub-surface layer damage, and surface roughness value is lower.Cmp absorbs both respective advantages, can while guarantee material removal efficiency, obtain comparatively perfectly surface, the flatness obtained uses these two kinds of grindings will exceed 1-2 the order of magnitude than simple, and can realize the surface roughness of nanoscale to atom level.
The enforcement of above-mentioned cmp technology CMP must depend on large-scale operation board and work-table of chemicomechanical grinding mill such as Applied Materials (Applied Materials Inc, hereinafter referred to as AMAT) LK board.Fig. 1 shows a kind of conventional CMP equipment 90, comprise: grinding head polish head, grinding table (not shown), grinding pad (Pad, not shown), grinding head cleaning and wafer handling unit (head clean load/unload, hereinafter referred to as HCLU), grinding table is fixed with grinding pad, grinding head cleaning and wafer handling unit HCLU are arranged on grinding table, comprise and load cup clean cup by being arranged at center, using the lifting platform of air cylinder driven, wafer is loaded on grinding pad Yu from grinding pad and wafer is set out.Existing CMP process of lapping is generally: grinding head draws wafer and to the surface-pressure of wafer towards grinding pad, simultaneous grinding liquid (slurry) flows between grinding pad and wafer, under the High Rotation Speed of grinding pad, lapping liquid slurry and crystal column surface occur to rub thus play grind, the smooth effect in surface.
Current CMP board end does not also have any device can calibrate the position of polish head to HCLU, technical staff can only by small tools such as inner hexagon spanners, manually measure, naked eyes go the mode of comparison to calibrate, this calibration process is generally: first rotated by polish cross head to HCLU (HCLU:headload/unload wafer assembly) top, HCLU is risen to centre position, the gap length between comparison polish head and HCLU is removed with inner hexagon spanner, which side gap is large just finely tunes polish head to this direction, until when making a circle balanced with the gap length between HCLU outside polish head, can judge that polish head to HCLU position correction completes.Under this calibrating mode, when calibrating this position completely without any standard, it can only be the position relying on the working experience of individual to remove to adjust polish head to HCLU.Because each technical staff engineer also exists larger difference when calibrating polish head to HCLU position, to such an extent as to the position of the polish head to HCLU of each CMP board also exists respective difference, the technical staff engineer that particularly a few thing experience is fewer easily produces deviation when calibrating head to HCLU position, generation HCLU is caused to occur the false alarm phenomenon of wafer loading/unloading failure when being loaded into wafer or setting out wafer, and wafer loads not in place and makes wafer occur the problem that slide plate or Grinding Quality are not high in process of lapping, race goods production capacity and the product quality of CMP board are had a strong impact on.
Therefore, a kind of new CMP grinder station is needed, to avoid above-mentioned defect.
Utility model content
The purpose of this utility model is to provide a kind of work-table of chemicomechanical grinding mill, can be very directly perceived, easy go calibrates grinding head to grinding head cleaning and the position of wafer handling unit, greatly improve the installation of CMP board and repair engine efficiency, ensureing normal work and the product quality of work-table of chemicomechanical grinding mill.
For solving the problem, the utility model provides a kind of work-table of chemicomechanical grinding mill, comprising:
Grinding table, rotates with a direction;
Grinding pad, is located on described grinding table;
Grinding fluid conveying device, is placed in and does not contact with grinding pad above described grinding pad and to carry on lapping liquid to described grinding pad;
Lapping head, is arranged on above grinding table, for drawing wafer and to the surface-pressure of wafer towards grinding pad in process of lapping, comprises for cleaning with following grinding head and the infrared transmitter of wafer handling unit position alignment;
Grinding head cleaning and wafer handling unit, be arranged on grinding table, wafer to be ground is loaded on grinding pad Yu from grinding pad and wafer is set out, the upper surface of the cleaning of described grinding head and wafer handling unit is provided with the calibration testing carrying out position alignment for grinding head cleaning and wafer handling unit and lapping head and marks, when grinding head cleaning and wafer handling unit are in the position aimed at lapping head, the infrared radiation of described infrared transmitter marks to described calibration testing.
Further, described infrared transmitter at least comprises one and is arranged on the infrared transmitter of lapping head towards the centre of surface position of grinding table, and described calibration testing mark comprises the mark that at least one is arranged on the center of the cleaning of described grinding head and wafer handling unit.
Further, described calibration testing is with being labeled as red circle.
Further, described work-table of chemicomechanical grinding mill also comprises and being placed in the cleaning of described grinding head and wafer handling unit and the calibration testing wafer aimed at described lapping head, and the center of described calibration testing wafer is provided with described calibration testing and marks.
Further, described grinding head cleaning and wafer handling unit comprise loading cup, the lifting platform of described loading cup heart position disposed therein, be loaded on by wafer to be ground on grinding pad Yu from grinding pad and set out by wafer, described calibration testing mark is arranged on the described center of loading cup or the center of lifting platform.
Further, described work-table of chemicomechanical grinding mill also comprises: infrared remote receiver, being arranged on described calibration testing mark, for receiving the infrared ray of described infrared transmitter, and marking to described calibration testing according to the infrared radiation of the intensity determination infrared transmitter of receiving infrared-ray.
Further, described work-table of chemicomechanical grinding mill also comprises: grinding pad regulator, is placed on described grinding pad, for striking off the surface of described grinding pad and the impurity on removal grinding pad.
Further, described work-table of chemicomechanical grinding mill also comprises: deionized water automatic flushing device, aims at grinding pad and arranges, for automatic cleaning grinding pad.
Further, described work-table of chemicomechanical grinding mill also comprises the retainer ring be arranged on lapping head, and described retainer ring, when grinding wafer, contacts with grinding pad.
Further, described grinding pad is multiple.
Compared with prior art, the cmp platform that the utility model provides, comprise the cleaning of grinding table, grinding pad, grinding fluid conveying device, lapping head and grinding head and wafer handling unit, described lapping head is provided with infrared transmitter, described grinding head cleaning and wafer handling unit are provided with the described calibration testing mark corresponding with infrared transmitter, when the IR that infrared transmitter is launched is irradiated on calibration testing mark, lapping head cleans with grinding head and wafer handling unit is aimed at.By infrared transmitter and the point-to-point position correction of calibration testing mark, very directly perceived, easy goes to the position of calibrating polish head to HCLU, farthest can ensure that the position of polish head to HCLU does not exist deviation, greatly improve the installation of CMP board and repair engine efficiency, thus ensureing normal work and the product quality of work-table of chemicomechanical grinding mill.
Accompanying drawing explanation
Fig. 1 is the structural representation of the staggered bottom plate part of a kind of work-table of chemicomechanical grinding mill of the prior art;
Fig. 2 is the structural representation of the work-table of chemicomechanical grinding mill of the utility model specific embodiment;
Fig. 3 is the infrared transmitter of the utility model specific embodiment and the scheme of installation of lapping head;
Fig. 4 be the utility model specific embodiment infrared transmitter, calibration testing mark with lapping head, HCLU scheme of installation.
Detailed description of the invention
Of the present utility modelly to be characterised in that, original work-table of chemicomechanical grinding mill is reequiped, lapping head increases the infrared transmitter for calibrating, HCLU arranges calibration testing mark, by mobile lapping head, when the center position that the infrared opposite-radiation that infrared transmitter is launched marks to calibration testing, just complete lapping head to the position correction of HCLU.Because lapping head and HCLU are concentrically ringed structures, the utility model preferably utilizes lapping head central point to the position correction mode of HCLU central point, farthest can ensure that lapping head does not exist deviation to the position of HCLU.
Please refer to Fig. 2, illustrated therein is a preferred embodiment of the present utility model, the present embodiment provides a kind of work-table of chemicomechanical grinding mill, comprising: grinding table 10 (polishing table), grinding pad 11, is located on described grinding table 10, grinding fluid conveying device 16, is placed in and does not contact with grinding pad 11 above described grinding pad 11 and to carry on lapping liquid to described grinding pad 11, lapping head polish head 12, be arranged on above described grinding table 10, for drawing the back side of wafer 14 when grinding, be placed in the front of wafer 14 on described grinding pad 11 and contact with described grinding pad 11, described lapping head 12 comprises and to clean with grinding head and the infrared transmitter 121 of wafer handling unit HCLU 13 position alignment, grinding head cleaning and wafer handling unit 13, be arranged on grinding table 10, for cleaning lapping head 12 and wafer to be ground being loaded on grinding pad 11 Yu from grinding pad 11, wafer is set out, the upper surface of described grinding head cleaning and wafer handling unit 13 is provided with and carries out the calibration testing mark 141 of position alignment for grinding head cleaning and wafer handling unit 13 with lapping head 12, when grinding head cleaning and wafer handling unit 13 are in the position aimed at lapping head 12, the infrared radiation of described infrared transmitter 121 is to described calibration testing mark 141.Wherein, described infrared transmitter 121 at least comprises one and is arranged on the infrared transmitter (Fig. 3 shown in) of lapping head 12 towards the center on the surface of grinding table 10, described calibration testing mark 141 comprises at least one mark being arranged on the center of the cleaning of described grinding head and wafer handling unit 13 (shown in Fig. 4), and what multiple infrared transmitter and multiple calibration testing marked arranges and can improve alignment precision further.Infrared transmitter and calibration testing mark can carry out adaptive even laying along the shape of grinding head and the shape of HCLU respectively.Please refer to Fig. 2 to Fig. 4, in the present embodiment, described calibration testing mark 141 is red circle, described work-table of chemicomechanical grinding mill also comprise be placed on described grinding head cleaning and wafer handling unit 13 on, the calibration testing wafer 14 aimed at described lapping head 12, the center of described calibration testing wafer 14 is provided with described calibration testing mark 141; Described grinding head cleaning and wafer handling unit 13 comprise loading cup 131, and the lifting platform 132 of described loading cup 131 heart position disposed therein, is loaded on wafer to be ground on grinding pad 11 Yu from grinding pad 11 and is set out by wafer to be ground.
In of the present utility model other are implemented, if without special calibration testing wafer 14, described calibration testing mark 141 also can be arranged on the center of described loading cup 131 or the center of lifting platform 132.
Preferably, in each embodiment of the present utility model, described work-table of chemicomechanical grinding mill also comprises: infrared remote receiver (not shown), be arranged on described calibration testing mark 141 place, for receiving the infrared ray of described infrared transmitter 121, and according to the infrared radiation of the intensity determination infrared transmitter 121 of receiving infrared-ray on described calibration testing mark 141.Described grinding pad 11 is multiple, realizes the simultaneous grinding of multiple wafer, to enhance productivity.
The work-table of chemicomechanical grinding mill of the present embodiment also comprises: grinding pad regulator 15, is placed on described grinding pad 11, for striking off the surface of described grinding pad 11 and the impurity on removal grinding pad 11; Deionized water automatic flushing device 17, aims at grinding pad 11 and arranges, for automatic cleaning grinding pad 11; And the retainer ring (retainer ring) 122 be arranged on lapping head, described retainer ring 122, when grinding wafer, contacts with grinding pad 11.
The work-table of chemicomechanical grinding mill of this enforcement, before treating grinding crystal wafer grinding, needs the position of relative lapping head and HCLU to aim at.To on time, the calibration testing wafer 14 that Xian Jiang center is provided with calibration testing mark 141 is placed on the loading cup 131 of HCLU; Then the position of lapping head 12 is adjusted, until when the infrared radiation that sends of infrared transmitter 121 that it is arranged is to the calibration testing mark 141 of calibration testing wafer 14 center, at the upper location parameter preserving this point of work-table of chemicomechanical grinding mill (CMP board), so far just complete lapping head 12 (polish head) to the position correction of HCLU13.Then just by lifting platform 132, calibration test wafer 14 can be taken away, wafer to be ground is placed on and load on cup 131, and then be loaded on grinding pad 11.When carrying out cmp, grinding table 10 and lapping head 12 rotate along certain direction respectively, lapping head 12 draws the back side of wafer, the front of wafer is placed on described grinding pad 11 and contacts with described grinding pad, lapping liquid is fed on grinding pad 11 by grinding fluid conveying device 12 continuously, wafer 14 carries out mechanical lapping by the abrasive grains (abrasive particles) in lapping liquid is auxiliary on grinding pad 11, forms smooth surface.
In actual applications, in order to the minimizing production cost of a nearlyer step, can according to technical conceive of the present utility model, directly dismounting is carried out to original CMP board, first the grinding head pedestal membrane of lapping head is removed, measure the center determining grinding head pedestal, choose a RF transmitter and be arranged on this center position, and using the bracing frame of grinding head pedestal as the fixed support of RF transmitter, guarantee to become vertical direction between RF transmitter with grinding head pedestal plane, and this grinding head pedestal is mounted on rotating seat; Choose one piece of calibration testing wafer wafer, with the center of the mode determination calibration testing wafer of two diameter intersection points, and mark red circle in this calibration testing with crystal circle center position and mark as calibration testing, be placed on HCLU by this calibration testing wafer, so far mounting portion completes.Then polishhead position is adjusted, until when the infrared radiation of infrared transmitter is to red circle, complete the position correction to polish head to HCLU.
In sum, the cmp platform that the utility model provides, comprise grinding table, grinding pad, grinding fluid conveying device, lapping head and grinding head clean and wafer handling unit, described lapping head is provided with infrared transmitter, described grinding head cleaning and wafer handling unit are provided with the described calibration testing mark corresponding with infrared transmitter, when the IR that infrared transmitter is launched is irradiated on calibration testing mark, lapping head cleans with grinding head and wafer handling unit is aimed at, by position correction mode, very directly perceived, easy goes to the position of calibrating polish head to HCLU, farthest can ensure that the position of polishhead to HCLU does not exist deviation, greatly improve the installation of CMP board and repair engine efficiency, thus ensure normal work and the product quality of work-table of chemicomechanical grinding mill.
Obviously, those skilled in the art can carry out various change and modification to utility model and not depart from spirit and scope of the present utility model.Like this, if these amendments of the present utility model and modification belong within the scope of the utility model claim and equivalent technologies thereof, then the utility model is also intended to comprise these change and modification.
Claims (10)
1. a work-table of chemicomechanical grinding mill, is characterized in that, comprising:
Grinding table, rotates with a direction;
Grinding pad, is located on described grinding table;
Grinding fluid conveying device, is placed in and does not contact with grinding pad above described grinding pad and to carry on lapping liquid to described grinding pad;
Lapping head, is arranged on above grinding table, for drawing wafer and to the surface-pressure of wafer towards grinding pad in process of lapping, comprises for cleaning with following grinding head and the infrared transmitter of wafer handling unit position alignment;
Grinding head cleaning and wafer handling unit, be arranged on grinding table, wafer to be ground is loaded on grinding pad Yu from grinding pad and wafer is set out, the cleaning of described grinding head and wafer handling unit upper surface are provided with the calibration testing carrying out position alignment for grinding head cleaning and wafer handling unit and lapping head and mark, when grinding head cleaning and wafer handling unit are in the position aimed at lapping head, the infrared radiation of described infrared transmitter marks to described calibration testing.
2. work-table of chemicomechanical grinding mill as claimed in claim 1, it is characterized in that, described infrared transmitter at least comprises one and is arranged on the infrared transmitter of lapping head towards the centre of surface position of grinding table, and described calibration testing mark comprises the mark that at least one is arranged on the center of the cleaning of described grinding head and wafer handling unit.
3. work-table of chemicomechanical grinding mill as claimed in claim 2, it is characterized in that, described work-table of chemicomechanical grinding mill also comprises and being placed in the cleaning of described grinding head and wafer handling unit and the calibration testing wafer aimed at described lapping head, and the center of described calibration testing wafer is provided with described calibration testing and marks.
4. work-table of chemicomechanical grinding mill as claimed in claim 2, it is characterized in that, described grinding head cleaning and wafer handling unit comprise loading cup, the lifting platform of described loading cup heart position disposed therein, be loaded on by wafer to be ground on grinding pad Yu from grinding pad and set out by wafer, described calibration testing mark is arranged on the described center of loading cup or the center of lifting platform.
5. work-table of chemicomechanical grinding mill as claimed in claim 2, it is characterized in that, described work-table of chemicomechanical grinding mill also comprises: infrared remote receiver, be arranged on described calibration testing mark, for receiving the infrared ray of described infrared transmitter, and mark to described calibration testing according to the infrared radiation of the intensity determination infrared transmitter of receiving infrared-ray.
6. the work-table of chemicomechanical grinding mill according to any one of claim 1 to 5, is characterized in that, described calibration testing is with being labeled as red circle.
7. the work-table of chemicomechanical grinding mill according to any one of claim 1 to 5, it is characterized in that, described work-table of chemicomechanical grinding mill also comprises: grinding pad regulator, is placed on described grinding pad, for striking off the surface of described grinding pad and the impurity on removal grinding pad.
8. the work-table of chemicomechanical grinding mill according to any one of claim 1 to 5, is characterized in that, described work-table of chemicomechanical grinding mill also comprises: deionized water automatic flushing device, aims at grinding pad and arranges, for automatic cleaning grinding pad.
9. the work-table of chemicomechanical grinding mill according to any one of claim 1 to 5, is characterized in that, described work-table of chemicomechanical grinding mill also comprises the retainer ring be arranged on lapping head, and described retainer ring, when grinding wafer, contacts with grinding pad.
10. the work-table of chemicomechanical grinding mill according to any one of claim 1 to 5, is characterized in that, described grinding pad is multiple.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420463227.5U CN204504984U (en) | 2014-08-15 | 2014-08-15 | Work-table of chemicomechanical grinding mill |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420463227.5U CN204504984U (en) | 2014-08-15 | 2014-08-15 | Work-table of chemicomechanical grinding mill |
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| CN204504984U true CN204504984U (en) | 2015-07-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109664188A (en) * | 2018-12-14 | 2019-04-23 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer device for attaching/detaching |
| TWI690389B (en) * | 2018-10-24 | 2020-04-11 | 大陸商長江存儲科技有限責任公司 | Apparatus for chemical mechanical polishing and method for chemical mechanical polishing |
| CN112692721A (en) * | 2020-12-23 | 2021-04-23 | 华虹半导体(无锡)有限公司 | Wafer positioning device and scratch tracking method for CMP (chemical mechanical polishing) process |
-
2014
- 2014-08-15 CN CN201420463227.5U patent/CN204504984U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI690389B (en) * | 2018-10-24 | 2020-04-11 | 大陸商長江存儲科技有限責任公司 | Apparatus for chemical mechanical polishing and method for chemical mechanical polishing |
| US11396080B2 (en) | 2018-10-24 | 2022-07-26 | Yangtze Memory Technologies Co., Ltd. | Chemical mechanical polishing apparatus having scraping fixture |
| CN109664188A (en) * | 2018-12-14 | 2019-04-23 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer device for attaching/detaching |
| CN112692721A (en) * | 2020-12-23 | 2021-04-23 | 华虹半导体(无锡)有限公司 | Wafer positioning device and scratch tracking method for CMP (chemical mechanical polishing) process |
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