CN204497246U - A kind of copper-indium-galliun-selenium film solar cell with gradient-structure - Google Patents
A kind of copper-indium-galliun-selenium film solar cell with gradient-structure Download PDFInfo
- Publication number
- CN204497246U CN204497246U CN201520222844.0U CN201520222844U CN204497246U CN 204497246 U CN204497246 U CN 204497246U CN 201520222844 U CN201520222844 U CN 201520222844U CN 204497246 U CN204497246 U CN 204497246U
- Authority
- CN
- China
- Prior art keywords
- gradient
- solar cell
- film solar
- copper
- galliun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of copper-indium-galliun-selenium film solar cell with gradient-structure, the pn knot that this battery is formed by CIGS absorbed layer and CdS resilient coating, the CIGS absorbed layer in the pn structure of described copper-indium-galliun-selenium film solar cell is the Cu with Graded band-gap
y(In
1-xga
x) Se
2sandwich construction, wherein 0≤x≤1,0≤y≤1.This gradient-structure can be separated and catch free electron, under the exciting of sunlight, forms larger current and improves the efficiency of thin-film solar cells.This gradient-structure avoids the abnormal growth of crystal grain and the formation in hole and crack, prepared fine and close, grain size evenly, the high-quality film of energy gap coupling, meanwhile, gradient-structure is conducive to the abundant absorption to sunlight.Thus, the efficiency of copper-indium-galliun-selenium film solar cell is further increased.
Description
Technical field
The utility model relates to solar cell and has the thin-film solar cells of gradient-structure, particularly has the copper-indium-galliun-selenium film solar cell structure of gradient-structure.
Background technology
External solar cell research and production, roughly can be divided into three phases, namely have three generations's solar cell.
First generation solar cell is for representative substantially with the solar cell of monocrystalline silicon and the silica-based single constituent element of polycrystalline.Only pay attention to improve photoelectric conversion efficiency and large-scale production, there is high energy consumption, labour intensive, the problem such as unfriendly and high cost to environment, its price producing electricity is about 2 ~ 3 times of coal electricity; Until 2014, the output of first generation solar cell still accounts for the 80-90% of global solar battery total amount.
Second generation solar cell is thin-film solar cells, is the new technology grown up in recent years, and it pays attention to reduce the energy consumption in production process and process costs, and brainstrust is called green photovoltaic industry.Compare with polysilicon solar cell with monocrystalline silicon, the consumption of its film HIGH-PURITY SILICON is its 1%, simultaneously, low temperature (about about 200 DEG C) plasma enhanced chemical vapor deposition deposition technique, electroplating technology, printing technology is extensively studied and is applied to the production of thin-film solar cells.Owing to adopting glass, the stainless steel thin slice of low cost, macromolecule substrate, as baseplate material and low temperature process, greatly reduces production cost, and is conducive to large-scale production.The material of the thin-film solar cells of success research and development is at present: CdTe, and its photoelectric conversion efficiency is 16.5%, and commercial product is about about 12%; CulnGaSe (CIGS), its photoelectric conversion efficiency is 19.5%, and commercial product is about 12%; Amorphous silicon and microcrystal silicon, its photoelectric conversion efficiency is 8.3 ~ 15%, and commercial product is 7 ~ 12%, in recent years, due to the research and development of the thin-film transistor of LCD TV, amorphous silicon and microcrystalline silicon film technology have had significant progress, and are applied to silicon-based film solar cells.Focus around thin-film solar cells research is, exploitation is efficient, low cost, long-life photovoltaic solar cell.They should have following feature: low cost, high efficiency, long-life, material source are abundant, nontoxic, the relatively more good amorphous silicon thin-film solar cell of scientists.The thin-film solar cells accounting for lion's share is at present non-crystal silicon solar cell, is generally pin structure battery, and Window layer is the P-type non-crystalline silicon of boron-doping, then deposits the unadulterated i layer of one deck, then deposits the N-type amorphous silicon that one deck mixes phosphorus, and plated electrode.Brainstrust is estimated, because thin-film solar cells has low cost, high efficiency, the ability of large-scale production, at 10 ~ 15 years of future, thin-film solar cells will become the main product of global solar battery.
Amorphous silicon battery generally adopts PECVD (Plasma Enhanced Chemical VaporDeposition-plasma enhanced chemical vapor deposition) method that the gases such as high purity silane are decomposed and deposits.This kind of manufacture craft, can complete in multiple vacuum deposition chamber continuously aborning, to realize producing in enormous quantities.Due to deposition decomposition temperature low, can on glass, corrosion resistant plate, ceramic wafer, flexible plastic sheet deposit film, be easy to large areaization produce, cost is lower.The structure of the amorphous silicon based solar battery prepared on a glass substrate is: Glass/TCO/p-a-SiC/i-a-Si/n-a-Si/TCO, and the structure of the amorphous silicon based solar battery prepared at the bottom of stainless steel lining is: SS/ZnO/n-a-Si/i-a-Si/p-na-Si/ITO.
Internationally recognized amorphous silicon/microcrystalline silicon tandem solar cell is the next-generation technology of silicon-base thin-film battery, is the important technology approach realizing high efficiency, low cost thin-film solar cells, is the industrialization direction that hull cell is new.Microcrystalline silicon film has been adopted hydrogen PCVD since nineteen sixty-eight since 600 DEG C first preparation by Veprek and Maracek, people start there has been Preliminary study to its potential premium properties, until 1979, Usui and Kikuchi of Japan strengthens chemical vapour deposition technique by the process and low-temperature plasma adopting high hydrogen silicon ratio, prepare doped microcrystalline silicon, people just study microcrystalline silicon materials and application in solar cells thereof gradually.1994, Switzerland
m.J.Williams and M.Faraji team proposes to take microcrystal silicon as end battery first, and amorphous silicon is the concept of the laminated cell of top battery, and this battery combines the long-wave response of amorphous silicon good characteristic and microcrystal silicon and the advantage of good stability.The amorphous silicon/microcrystalline silicon tandem battery component sample efficiencies of Mitsubishi heavy industrys in 2005 and Zhong Yuan chemical company reaches 11.1% (40cm × 50cm) and 13.5% (91cm × 45cm) respectively.Japanese Sharp company realizes amorphous silicon/microcrystalline silicon tandem solar cell industryization in September, 2007 and produces (25MW, efficiency 8%-8.5%), Europe Oerlikon (Oerlikon) company announce in September, 2009 the most high conversion efficiency in its amorphous/crystallite lamination solar cell laboratory reach 11.9%, at 2010 6 in the solar cell exhibition " PVJapan2010 " of Yokohama opening, Applied Materials (AMAT) announce that the conversion efficiency that the conversion efficiency of 0.1m × 0.1m module reaches 10.1%, 1.3m × 1.1m module reaches 9.9%.Improve the most effective approach of battery efficiency is improve the efficiency of light absorption of battery as far as possible.For silica-base film, low bandgap material is adopted to be inevitable approach.The low bandgap material adopted as Uni-Solar company is a-SiGe (amorphous silicon germanium) alloy, and their a-Si/a-SiGe/a-SiGe tri-ties laminated cell, small size battery (0.25cm
2) efficiency reaches 15.2%, stabilization efficiency reaches 13%, 900cm
2component efficiency reaches 11.4%, and stabilization efficiency reaches 10.2%, and product efficiency reaches 7%-8%.
For thin-film solar cells, a unijunction, there is no the silion cell of optically focused, in theory maximum electricity conversion be 31% (Shockley ?Queisser restriction).According to band-gap energy reduce order, the silion cell not having optically focused of binode, maximum electricity conversion rises to 41% in theory, and three knot reach 49%.Therefore, developing multi-knot thin film solar cell is the important channel promoting solar battery efficiency.For cadmium telluride diaphragm solar battery, the fusing point of the high or low band gap material matched with cadmium telluride is very low, and unstable, is difficult to form the efficient series-connected solar cells of many knots.For CIGS thin film solar cell, the high or low band gap material matched with CIGS is difficult to prepare, and also not easily forms the efficient series-connected solar cells of many knots.For silicon-based film solar cells, the band gap of crystalline silicon and amorphous silicon is 1.1eV and 1.7eV, and the band gap of nano-silicon changes between 1.1eV and 1.7eV according to the large I of crystallite dimension.Si based compound, the concentration as crystal Si1-xGex band gap (0≤X≤1) foundation Ge can change to 0.7eV from 1.1eV, and amorphous SiGe can 1.4, and Amorphous GaN is about 1.95eV, and this combination is just in time match with the spectrum of the sun.
On the other hand, how to absorb luminous energy fully, improve the electricity conversion of solar cell, allow electronic energy as much as possible be optically excited and to change electric energy into, like this, it is important that the level-density parameter of battery material and few defect cause pass.From technological layer, high-quality and the uniformity of film is ensured while the technological difficulties of thin film deposition are to realize high speed deposition, because film crystallite dimension, the base material of Growing Process of Crystal Particles and growth all has strong impact to the quality of film and uniformity, thus affects the performance of whole battery performance.In film Growing Process of Crystal Particles, due to the abnormal growth of crystal grain, cause grain size uneven, very easily form hole and crack.Be full of the compound that hole in film and crack add charge carrier, and cause leakage current, seriously reduce Voc and FF value.Therefore, solving this technical barrier, is the important channel of preparing efficient thin-film solar cell.
We are at patent ZL200910043930-4, from technical elements in ZL200910043931-9 and ZL200910226603-2, manufacture high efficiency a-Si/ μ C-Si, with a-Si/nC-Si/ μ C-Si binode and three knot silicon-based film solar cells, high density (HD) and hyperfrequency (VHF)-PECVD technology have been developed and for high-quality, the a-Si of large scale, a-SiGe, nC-Si, μ C-Si, A-SiC thin film deposition.Using a-SiC as Window layer, and p-type doping Si-rich silicon oxide film is used for central reflector layer between top a-Si and bottom μ c-Si battery and has been used for increasing the efficiency that a-Si/ μ C-Si binode and a-Si/nC-Si/ μ C-Si tri-tie silicon-based film solar cells.The CVD process optimization of high-quality B doping ZnO x, improves its mist degree and conductivity, and have studied other light capture technique.Three knot silicon-based film solar cells laboratory sample efficiency can reach 15%, have stabilization efficiency be greater than 10% and above business-like a-Si/ μ C-Si (1.1 meters of x1.3 rice) solar module prepare.
The application continues research on the basis of patent ZL200910043930-4, ZL200910043931-9 and ZL200910226603-2, aims to provide a kind of copper-indium-galliun-selenium film solar cell with gradient-structure.
The typical structure of existing CIGS thin-film (CIGS) solar cell is multi-layer film structure, from incidence surface, comprise successively: electrode/resilient coating (CdS)/light absorbing zone (CIGS)/dorsum electrode layer (Mo)/substrate before front glass sheet/encapsulating material/TCO.
Utility model content
The technical problems to be solved in the utility model is, for the problem of the defect that thin-film material mates with solar spectral energy gap, crystal grain is formed and produces in growth course that prior art exists, and how fully to absorb sunlight and to improve electricity conversion, the copper-indium-galliun-selenium film solar cell with gradient-structure is proposed.
For achieving the above object, the technical solution of the utility model is:
Have a copper-indium-galliun-selenium film solar cell for gradient-structure, comprise the pn knot formed by CIGS absorbed layer and CdS resilient coating, the CIGS absorbed layer in the pn knot of described copper-indium-galliun-selenium film solar cell is the Cu with Graded band-gap
y(In
1-xga
x) Se
2sandwich construction, wherein 0≤x≤1,0≤y≤1; Described Cu
y(In
1-xga
x) Se
2the energy gap of sandwich construction between 1.65eV-1eV, from the first floor to last layer by high energy gap layer to low energy gap layer arrange, and arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.1eV.
In described sandwich construction, crystallite dimension preferably increases to 2 microns gradually from 10nm, forms energy gap from high energy gap layer to the gradient-structure of low energy gap layer even transition.
In described sandwich construction arbitrary neighborhood two-layer between energy gap difference preferably between 0.01 – 0.05eV.
The gross thickness of described sandwich construction is preferably between 0.1 micron to 3 microns.
In described sandwich construction, the thickness of every one deck is preferably 1nm-100nm, more preferably 1nm-10nm.
Below the utility model be further explained and illustrate:
Described Cu
y(In
1-xga
x) Se
2the Graded band-gap of sandwich construction is formed by following four kinds of reasons::
(1) described Cu
y(In
1-xga
x) Se
2in gradient-structure, y is constant, and x reduces gradually from 1 to 0, forms energy gap from high energy gap layer to the gradient-structure of low energy gap layer even transition;
(2) described Cu
y(In
1-xga
x) Se
2in gradient-structure, x is constant, and y reduces gradually from 1 to 0, forms energy gap from high energy gap layer to the gradient-structure of low energy gap layer even transition;
(3) described Cu
y(In
1-xga
x) Se
2the atomic dopant concentration of Na, Na of adulterating in gradient-structure increases gradually between 0%-5%, forms energy gap from high energy gap layer to the gradient-structure of low energy gap layer even transition;
(4) described Cu
y(In
1-xga
x) Se
2in gradient-structure, crystallite dimension increases to 2 microns gradually from 10nm, forms energy gap from high energy gap layer to the gradient-structure of low energy gap layer even transition.
Above four kinds of forms are the Cd forming energy gap change
xte
yfour kinds of modes of gradient-structure, can be that the energy gap that wherein a kind of form causes changes, also can be that wherein several form causes energy gap to change simultaneously.Described gradient-structure refers to the sandwich construction with Graded band-gap.
Such as, y=1, x increase from 0.4 to 0.6 the form Graded band-gap of several combination gradually, and crystallite dimension increases gradually, and increase gradually from 0%-5% doped with the doping of Na, Na, form energy gap from high energy gap layer to the gradient-structure of low energy gap layer even transition.
The described copper-indium-galliun-selenium film solar cell with gradient-structure comprises unijunction or ties copper-indium-galliun-selenium film solar cell more.
Many knots of the present utility model have in the thin-film solar cells of gradient-structure, and utilizing the gradient-structure of wide gap material to do top electricity knot, is electric energy by the light energy conversion of short wavelength; Utilize the gradient-structure of arrowband material to do end electricity knot, speciality wavelength luminous energy can be converted into electric energy.Owing to more taking full advantage of the spectral domain of sunlight, the thin-film solar cells that many knots have gradient-structure has higher photoelectric conversion efficiency.
For Copper Indium Gallium Selenide vestalium thin-film solar cell, its gradient-structure is by Cu
y(In
1-xga
x) Se
2(1-1.65eV) (1>=x>=0,1>=y>=0) is by changing the size of x, y, and the doping of sodium and/or grain size regulate the energy gap of Copper Indium Gallium Selenide material to mate.Test verified, the change of the composition of CIGS directly causes the change of its optical band gap Eg.Therefore, the relative amount of change Ga or the ratio of Ga/ (Ga+In) just can adjust the optical band gap of CIGS with the change relative amount of Cu or the ratio of Cu/ (Ga+In).According to molecular formula Cu
y(In
1-xga
x) Se
2, work as x=0, y=1, time, namely the Eg of CuInSe2 is approximately 0.94eV to 1.04eV, works as x=1, and during y=1, namely the Eg of CuGaSe2 is approximately 1.65eV to 1.70eV.
Optical band gap Eg and the Cu of CIGS
y(In
1-xga
x) Se
2the relation of composition can be represented by the formula: Eg=(1-x) 1.01eV+x1.70eV-bx (1-x).
Here b is correction factor, 0≤b≤0.3,
When CIGS is applied to solar cell, molecular formula Cu
y(In
1-xga
x) Se
2(CIGS) prominent example formed is 0.3≤x≤0.4 and 0.7≤y≤0.9. namely lack the composition of copper.Meanwhile, by adjustment y, i.e. the energy gap of the Erbium-doped amount of the mixing 0.05-0.5% of the composition of copper and sodium also adjustable CIGS material.
Gradient-structure change in elevation is determined by the energy gap difference made between material, is regulated by the energy gap size of its material that matches.Every grade of gradient-structure varying width regulates by the thickness forming same gap material.
Compared with prior art, advantage of the present utility model is:
Gradient-structure described in the utility model can be separated and catch free electron, under the exciting of sunlight, forms larger current and improves the efficiency of thin-film solar cells.Described gradient-structure avoids the abnormal growth of crystal grain and the formation in hole and crack, and prepared fine and close, grain size is even, and the high-quality film of energy gap coupling, meanwhile, gradient-structure is conducive to the abundant absorption to sunlight.Thus, the efficiency of thin-film solar cells is further increased.
Accompanying drawing explanation
Fig. 1 is the copper-indium-galliun-selenium film solar cell structure chart with gradient-structure; .
Fig. 2 is the Cu with Graded band-gap
y(In
1-xga
x) Se
2sandwich construction schematic diagram; Wherein 1 be high energy gap layer, 2 is multilayer transition layer that energy gap evenly reduces, and 3 is low energy gap layer.
Fig. 3 is the copper-indium-galliun-selenium film solar cell preparation technology flow chart with gradient-structure.
Embodiment
Below in conjunction with embodiment, the utility model is described further.
As shown in Figure 1, the typical structure of CIGS thin-film (CIGS) solar cell is multi-layer film structure, from incidence surface, comprise successively: electrode/resilient coating (CdS)/light absorbing zone (CIGS)/dorsum electrode layer (Mo)/substrate before front glass sheet/encapsulating material/TCO;
As shown in Figure 2, described copper-indium-galliun-selenium film solar cell pn knot in CIGS absorbed layer be the Cu with Graded band-gap
y(In
1-xga
x) Se
2sandwich construction, wherein 0≤x≤1,0≤y≤1; Described Cu
y(In
1-xga
x) Se
2the energy gap of sandwich construction between 1.65eV-1eV, from the first floor to last layer by high energy gap layer to low energy gap layer arrange, and arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.1eV.
The gross thickness of described gradient-structure is between 0.1 micron to 3 microns.The thickness stating each transition zone in gradient-structure is between 1nm-10nm.
As shown in Figure 3, the manufacture method described in the copper-indium-galliun-selenium film solar cell of gradient-structure comprises:
(1) to glass substrate or metal, polymeric substrate cleans;
(2) on substrate, metal M o electrode is prepared;
Magnetically controlled sputter method is adopted to prepare metal M o electrode; Magnetron sputtering pressure is 3 – 10 milli torrs, and deposition rate is 2-5nm/ second.Mo thickness of electrode is 0.5-1 micron.
(3) metal M o layer, at 550 DEG C-650 DEG C, selenizing forms the excessive layer of MoSe, i.e. back contact.
(4) adopt machinery and laser technology scribing metal M o film plating layer, electrode segmentation forms the electrode of sub-battery
(5) glass substrate after scribing is cleaned again;
(6) its Copper Indium Gallium Selenide gradient-structure is when glass substrate temperature is 550-650 DEG C, and adopt Vacuum sublimation, magnetron sputtering and CVD method prepare CIGS thin-film gradient-structure.The forming process of every layer of Copper Indium Gallium Selenide has three kinds of modes:
1. employing Cu, In, Ga tri-constituent element metal vacuum thermal evaporation and magnetron sputtering method are formed
The intermediate alloy of Cu:In:Ga, then uses H2Se (or Se) to carry out selenizing formation
Cu(In,Ga)Se
2。
2. adopt Cu and In, Ga respectively Vacuum sublimation and magnetron sputtering method and H
2se (or Se) selenizing combines and forms Cu
2se and (In, Ga)
2se
3mixed layer, then at H
2cu (In, Ga) Se is formed under Se (or Se) Seleno reaction conditions
2.
3. adopt four constituent element Ni metal+In+Ga+Se Vacuum sublimations and magnetron sputtering method directly to form Cu (In, Ga) Se
2.
This technique adopts the third method to prepare Copper Indium Gallium Selenide gradient-structure, and technique is co-evaporation method preparation:
At the pressure that the vacuum degree of reative cell is 0.01-0.03 torr, then pass into helium, when reaching the pressure of 10-20 torr and 200 DEG C, start to plate buffer layer thin film, about 20-50 nanometer, then substrate temperature is raised to as 550-650 DEG C, Cu, In, Ga, the graphite boat source temperature of Se is Cu:1200-1700 DEG C, In:900-1200 DEG C, prepares Copper Indium Gallium Selenide gradient-structure for Ga:800-1000 DEG C and Se:300-500 DEG C.The Copper Indium Gallium Selenide raw material of evaporation source is according to Cu
y(In
1-xga
x) Se
2(1.65eV)/Cu
y(In
1-xga
x) Se
2(1eV) (1>=x>=0,1>=y>=0) is mixed by the Erbium-doped changing the size of x.y, grain size and sodium and is regulated the energy gap of Copper Indium Gallium Selenide material to mate.
The energy gap of Copper Indium Gallium Selenide material is regulated to mate from 10nm to 2 μm in order to adjust grain size, by adjustment substrate temperature from 500 to 650 DEG C, with adjustment Cu, In, the graphite boat source temperature of Ga, Se and deposition rate control the adjustment that Copper Indium Gallium Selenide grain size reaches Copper Indium Gallium Selenide energy gap.Often plate a skim, remove oxide or the Copper Indium Gallium Selenide particulate of any loose attachment with the nitrogen of drying.The film thickness of Copper Indium Gallium Selenide gradient-structure is 1-4 μm.
The resistive performance regulating Copper Indium Gallium Selenide material for being mixed by the Erbium-doped of sodium and energy gap coupling, the Erbium-doped adopting co-evaporation method to carry out sodium mixes.The sodium source of usual employing is NaF (steaming temperature 800-1000 DEG C altogether), Na2Se (steaming temperature 700-1000 DEG C altogether) and Na
2s (altogether steam temperature 1000-1200 DEG C), Erbium-doped concentration of mixing is 0.05 to 0.2% atomic concentration.
(7) on Copper Indium Gallium Selenide gradient-structure layer, CdS film is prepared with chemical solution method;
The raw material of cadmium adopts 0.02-0.05 molar concentration cadmium acetate (CdAc2), the ammonium acetate (NH of 0.5-2 molar concentration
4ac), the ammoniacal liquor (NH of 10-20 molar concentration
4the thiocarbamide (CS (NH3) 2) of OH) and 0.05 – 0.1 molar concentration is as sulphur source.Chemical solution reaction method depositing temperature is 80-95 DEG C, and CdS film deposit thickness is 60 – 200 nanometers.After plating mould completes, then substrate takes out from bath, puts into warm deionized water, and with ultrasonic process (about 2 minutes) to remove the CdS particulate of loose attachment, then uses dry N
2dry up.(8) TCO and ITO and ZnO film is prepared, thickness 200 – 400 nanometer.
(9) adopt laser technology and mechanical etching process that the segmentation of TCO electrode is formed single sub-battery;
(9) laser scribing is carried out to battery edge;
(10) circuit connection and encapsulation are carried out to battery.
Claims (6)
1. have a copper-indium-galliun-selenium film solar cell for gradient-structure, comprise the pn knot formed by CIGS absorbed layer and CdS resilient coating, it is characterized in that, the CIGS absorbed layer in the pn knot of described copper-indium-galliun-selenium film solar cell is the Cu with Graded band-gap
y(In
1-xga
x) Se
2sandwich construction, wherein 0≤x≤1,0≤y≤1; Described Cu
y(In
1-xga
x) Se
2the energy gap of sandwich construction between 1.65eV-1eV, from the first floor to last layer by high energy gap layer to low energy gap layer arrange, and arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.1eV.
2. have the copper-indium-galliun-selenium film solar cell of gradient-structure according to claim 1, it is characterized in that, in described sandwich construction, crystallite dimension increases to 2 microns gradually from 10nm.
3. there is the copper-indium-galliun-selenium film solar cell of gradient-structure according to claim 1 or 2, it is characterized in that, in described sandwich construction arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.05eV.
4. according to claim 1 or 2, have the copper-indium-galliun-selenium film solar cell of gradient-structure, it is characterized in that, the gross thickness of described sandwich construction is between 0.1 micron to 3 microns.
5. according to claim 1 or 2, have the copper-indium-galliun-selenium film solar cell of gradient-structure, it is characterized in that, in described sandwich construction, the thickness of every one deck is 1nm-100nm.
6. have the copper-indium-galliun-selenium film solar cell of gradient-structure according to claim 5, it is characterized in that, in described sandwich construction, the thickness of every one deck is 1nm-10nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520222844.0U CN204497246U (en) | 2015-04-14 | 2015-04-14 | A kind of copper-indium-galliun-selenium film solar cell with gradient-structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520222844.0U CN204497246U (en) | 2015-04-14 | 2015-04-14 | A kind of copper-indium-galliun-selenium film solar cell with gradient-structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204497246U true CN204497246U (en) | 2015-07-22 |
Family
ID=53576540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520222844.0U Active CN204497246U (en) | 2015-04-14 | 2015-04-14 | A kind of copper-indium-galliun-selenium film solar cell with gradient-structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204497246U (en) |
-
2015
- 2015-04-14 CN CN201520222844.0U patent/CN204497246U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tao | Inorganic photovoltaic solar cells: silicon and beyond | |
| Xiao et al. | High-efficiency silicon solar cells—materials and devices physics | |
| Li et al. | Fabrication of Cu (In, Ga) Se2 thin films solar cell by selenization process with Se vapor | |
| CN101820007B (en) | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof | |
| CN104851931B (en) | Cadmium telluride diaphragm solar battery and its manufacture method with gradient-structure | |
| Saji et al. | CIGS thin film solar cells by electrodeposition | |
| CN102157577B (en) | Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof | |
| CN104766896B (en) | A kind of copper-indium-galliun-selenium film solar cell with gradient-structure and preparation method thereof | |
| CN101866963A (en) | Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof | |
| KR20130016528A (en) | Preparation method for czt(s,se) thin film and czt(s,se) thin film prepared the same | |
| CN104733548B (en) | There is silicon-based film solar cells and its manufacture method of quantum well structure | |
| CN101820006B (en) | High-conversion rate silicon-based unijunction multi-laminate PIN thin-film solar cell and manufacturing method thereof | |
| Adeyinka et al. | A review of current trends in thin film solar cell technologies | |
| CN114335348A (en) | PN heterojunction antimony selenide/perovskite solar cell and preparation method thereof | |
| CN204668317U (en) | There is the silicon-based film solar cells of gradient-structure | |
| CN101894871B (en) | High-conversion rate silicon crystal and thin film compound type unijunction PIN (Positive Intrinsic-Negative) solar battery and manufacturing method thereof | |
| CN105355699A (en) | Multi-junction multi-lamination cadmium telluride thin film solar cell and preparation method thereof | |
| CN204668332U (en) | There is the cadmium telluride diaphragm solar battery of gradient-structure | |
| CN108389934A (en) | A method of preparing CIGS solar cell with a step sputtering method | |
| CN104821344B (en) | There is copper-indium-galliun-selenium film solar cell and the manufacture method thereof of quantum well structure | |
| CN204497246U (en) | A kind of copper-indium-galliun-selenium film solar cell with gradient-structure | |
| CN204424275U (en) | There is the cadmium telluride diaphragm solar battery of quantum well structure | |
| CN204424293U (en) | There is the copper-indium-galliun-selenium film solar cell of quantum well structure | |
| CN204424272U (en) | There is the silicon-based film solar cells of quantum well structure | |
| Petti et al. | Thin Films in Photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |