CN204491031U - A kind of semicircle cover plate of carbide epitaxial furnace - Google Patents
A kind of semicircle cover plate of carbide epitaxial furnace Download PDFInfo
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- CN204491031U CN204491031U CN201520024756.XU CN201520024756U CN204491031U CN 204491031 U CN204491031 U CN 204491031U CN 201520024756 U CN201520024756 U CN 201520024756U CN 204491031 U CN204491031 U CN 204491031U
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- cover plate
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- semicircle
- carbide epitaxial
- epitaxial furnace
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Abstract
The utility model discloses a kind of semicircle cover plate of carbide epitaxial furnace, comprises large cover plate and little cover plate; Large cover plate and little cover plate are toroidal, and large cover plate is spliced by two semicircular ring cover plates, large cover plate intermediate formation toroidal cavity, and little cover plate is spliced by a plurality of fan-shaped annulus cover plate, and little cover plate is arranged in the toroidal cavity of large cover plate; The utility model can improve the utilization ratio of the semicircle cover plate of carbide epitaxial furnace and the production efficiency of silicon carbide epitaxy wafer, reduces production cost.
Description
Technical field
The utility model relates to epitaxial growth equipment technical field, particularly a kind of semicircle cover plate of carbide epitaxial furnace.
Background technology
At present, silicon carbide epitaxial growth achieves commercialization, usually adopts the method for CVD (chemical vapour deposition) to grow silicon carbide epitaxy wafer.Along with the progress of manufacturing silicon carbide semiconductor technology, industry application is more and more higher to the requirement of silicon carbide power device performance, cost requirement is more and more lower, device for high-power power electronic proposes higher requirement and demand to carborundum crystals and epitaxial material, improve spare part utilization ratio, reduce the task of top priority that production cost becomes carborundum crystals development.
Carbide epitaxial furnace is used to the reaction chamber of growing silicon carbide epitaxial wafer, the business carbide epitaxial furnace of current main flow, in order to coordinate the needs of production, the a lot of damageable spare parts of usual needs deposit and increase spare part cleaning personnel, this adds production cost virtually, brings larger burden to enterprise.2400 or 2800 serial carbide epitaxial furnace of such as German Aixtron company, the spare part of its reaction chamber inside nearly up to a hundred, and damageable spare parts just has more than 30, the damageable spare parts of one of them---semicircle cover plate (cover discoutside), with reference to shown in Fig. 1, be mainly used between reaction chamber inlet end and substrate slice, because residing warm area temperature field span is larger, input and output gas can leave the dirt settling of deposition on semicircle cover plate, main part of these dirt settlings is complicated, and semicircle cover plate material is graphite, the region depositing dirt settling when spare part is safeguarded is difficult to thoroughly clean out, cause stove in its work-ing life about 40 ~ 50, and more renew at every turn semicircle cover plate time, all to toast the impurity such as the steam removing its surface attachment to the carrying out of spare part, this reduces production efficiency undoubtedly, the production cost simultaneously also increased.
In view of this, the semicircle cover plate of the present inventor to above-mentioned carbide epitaxial furnace improves, and especial manufacture goes out a kind ofly to be convenient to clean and the semicircle cover plate of more durable carbide epitaxial furnace, and this case produces thus.
Utility model content
The purpose of this utility model is the semicircle cover plate providing a kind of carbide epitaxial furnace, and it can improve the utilization ratio of the semicircle cover plate of carbide epitaxial furnace and the production efficiency of silicon carbide epitaxy wafer, reduces production cost.
To achieve these goals, the technical solution of the utility model is as follows:
A semicircle cover plate for carbide epitaxial furnace, comprises large cover plate and little cover plate; Large cover plate and little cover plate are toroidal, and large cover plate is spliced by two semicircular ring cover plates, large cover plate intermediate formation toroidal cavity, and little cover plate is spliced by a plurality of fan-shaped annulus cover plate, and little cover plate is arranged in the toroidal cavity of large cover plate.
Described tegillum sheet material is silicon carbide.
Described little cover plate diameter is less than or equal to large cover plate diameter.
After adopting such scheme, the Impurity deposition region that the utility model is corresponding on large cover plate arranges the little cover plate being convenient to tear off, settling is made to be covered with on little cover plate, only little cover plate need be taken out at cleaning cover plate, replace with new little cover plate, the little cover plate taken out is cleaned comprehensively, little cover plate middle fan shape annulus cover plate can set its quantity as required, the cleaning efficiency of cover plate is maximized, simultaneously more thorough to the cleaning of little cover plate, and then the longer service life of semicircle cover plate spare part, do not need frequent replacing, reduce the maintenance cost of carbide epitaxial furnace.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of existing semicircle cover plate;
Fig. 2 is the vertical view of the utility model embodiment one;
Fig. 3 is the vertical view of the utility model embodiment two.
Label declaration
Large cover plate 1, toroidal cavity 11, semicircular ring cover plate 2, little cover plate 3, fan-shaped annulus cover plate 4.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Embodiment one:
As shown in Figure 2, the semicircle cover plate of a kind of carbide epitaxial furnace that the utility model discloses, comprises large cover plate 1 and little cover plate 2; Large cover plate 1 and little cover plate 2 are toroidal, large cover plate 1 is spliced by two semicircular ring cover plates 2, large cover plate 1 intermediate formation toroidal cavity 11, little cover plate 3 is spliced by a plurality of fan-shaped annulus cover plate 4, the little cover plate 3 of the present embodiment is spliced by fan-shaped annulus cover plate 4, is arranged in the toroidal cavity of large cover plate 1 by two little cover plates 3.
Tegillum sheet material is silicon carbide, because silicon carbide directly can carry out clean and oven dry, then the little cover plate of silicon carbide can improve the cleaning efficiency of semicircle cover plate further.
Little cover plate 3 diameter is less than or equal to large cover plate 1 diameter, the diameter of the little cover plate of the present embodiment 3 is less than the diameter of large cover plate 1, when semicircle cover plate settling overlay area concentrates on centre, little cover plate 3 need two fan-shaped annulus cover plates 4 form, to save material and scavenging period.
Embodiment two:
As shown in Figure 3, the difference of the present embodiment and embodiment one is: little cover plate 3 diameter equals large cover plate 1 diameter, large cover plate 1 covers by little cover plate 3 comprehensively, the present embodiment be applicable to semicircle cover plate be all deposited thing cover time situation, little cover plate 3 is made up of four fan-shaped annulus cover plates 4 simultaneously, the fan-shaped annulus cover plate 4 being divided into more deciles can make little cover plate clean more fast thoroughly, can also sedimental fan-shaped annulus cover plate 4 will be had to take out replacing separately, convenient and swift.
The utility model is to the improvement of the semicircle cover plate of original carbide epitaxial furnace, by setting up the little cover plate 3 of silicon carbide on original semicircle cover plate, improve cleaning efficiency, silicon carbide little cover plate 3 is reusable, reduce production cost, avoid the clean and maintenance of semicircle cover plate spare part too frequent, thus extend its work-ing life.
Above-described embodiment and graphic and non-limiting product form of the present utility model and style, any person of an ordinary skill in the technical field, to its suitable change done or modification, all should be considered as not departing from patent category of the present utility model.
Claims (3)
1. a semicircle cover plate for carbide epitaxial furnace, is characterized in that: comprise large cover plate and little cover plate; Large cover plate and little cover plate are toroidal, and large cover plate is spliced by two semicircular ring cover plates, large cover plate intermediate formation toroidal cavity, and little cover plate is spliced by a plurality of fan-shaped annulus cover plate, and little cover plate is arranged in the toroidal cavity of large cover plate.
2. the semicircle cover plate of a kind of carbide epitaxial furnace as claimed in claim 1, is characterized in that: described tegillum sheet material is silicon carbide.
3. the semicircle cover plate of a kind of carbide epitaxial furnace as claimed in claim 1, is characterized in that: described little cover plate diameter is less than or equal to large cover plate diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520024756.XU CN204491031U (en) | 2015-01-14 | 2015-01-14 | A kind of semicircle cover plate of carbide epitaxial furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520024756.XU CN204491031U (en) | 2015-01-14 | 2015-01-14 | A kind of semicircle cover plate of carbide epitaxial furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204491031U true CN204491031U (en) | 2015-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520024756.XU Active CN204491031U (en) | 2015-01-14 | 2015-01-14 | A kind of semicircle cover plate of carbide epitaxial furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104695011A (en) * | 2015-01-14 | 2015-06-10 | 瀚天天成电子科技（厦门）有限公司 | Semi-circular cover plate for silicon carbide epitaxial furnace |
-
2015
- 2015-01-14 CN CN201520024756.XU patent/CN204491031U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104695011A (en) * | 2015-01-14 | 2015-06-10 | 瀚天天成电子科技（厦门）有限公司 | Semi-circular cover plate for silicon carbide epitaxial furnace |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee after: EPIWORLD INTERNATIONAL CO.,LTD. Address before: 361000 room 425, entrepreneurship building, entrepreneurship Park, Xiamen Torch High tech Zone, Huli District, Xiamen City, Fujian Province Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
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| CP02 | Change in the address of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee after: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. Address before: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder |