CN204391125U - Photovoltaic cell backside laser Grooving patterns structure - Google Patents
Photovoltaic cell backside laser Grooving patterns structure Download PDFInfo
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- CN204391125U CN204391125U CN201520092909.4U CN201520092909U CN204391125U CN 204391125 U CN204391125 U CN 204391125U CN 201520092909 U CN201520092909 U CN 201520092909U CN 204391125 U CN204391125 U CN 204391125U
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Abstract
The utility model discloses a kind of photovoltaic cell backside laser Grooving patterns structure, it comprises figure main body, and figure main body has: many die sinking line segments or phantom line segments be parallel to each other; Multiple Adhesion enhancement part, described Adhesion enhancement part has for adhering to opening diaphragm area and opening diaphragm area for adhering to the non-of passivating film of silicon substrate, and opens diaphragm area and Fei Kai diaphragm area and to be distributed in distance shape.The utility model, under the prerequisite not affecting cell conversion efficiency, improves the contact of back electrode and silicon chip, strengthens the adhesive force of back electrode, and reduce back electrode and to come off risk, back electrode regional area forms alloyed region simultaneously, improves the La Tuoli of backplane.
Description
Technical field
The utility model relates to a kind of photovoltaic cell backside laser Grooving patterns structure.
Background technology
At present, for improving the electricity conversion of solar cell, current solar cell, by adopting the mode of chemical deposition to form one deck passivating film overleaf overleaf, effectively can improve the long-wave response of battery, reduces back side recombination rate.The back electrode silver slurry adopted due to back of the body passivation cell and back electric field aluminum pulp do not have destruction to passivating film, while raising battery efficiency, cause back of the body electric field can not directly contact with silicon chip with back electrode.
In order to make the back side form certain contact, the back side, by laser ablation local passivating film, makes back pastes and cell piece form good contact, is conducive to the derivation of electric current, collection.Due to backside laser fluting, aluminum back electric field can form good contact with silicon chip, carries on the back the electric field problem that comes off simultaneously and substantially can be resolved.But back electrode part fluting area is less, is easy to occur that La Tuoli is defective, electrode delamination problem, seriously can affects the reliability of assembly after components welding.
Summary of the invention
Technical problem to be solved in the utility model is the defect overcoming prior art, a kind of photovoltaic cell backside laser Grooving patterns structure is provided, it is under the prerequisite not affecting cell conversion efficiency, improve the contact of back electrode and silicon chip, strengthen the adhesive force of back electrode, reduce back electrode to come off risk, back electrode regional area forms alloyed region simultaneously, improves the La Tuoli of back electrode.
In order to solve the problems of the technologies described above, the technical solution of the utility model is: a kind of photovoltaic cell backside laser Grooving patterns structure, and it comprises figure main body, and figure main body has:
Many be parallel to each other open film line segment or phantom line segments;
Multiple Adhesion enhancement part, described Adhesion enhancement part has for adhering to opening diaphragm area and opening diaphragm area for adhering to the non-of passivating film of silicon substrate, and opens diaphragm area and Fei Kai diaphragm area and to be distributed in distance shape.
Opening film line segment or phantom line segments and Adhesion enhancement part is mutual vertical configuration.
Further provide the arrangement of a kind of concrete Adhesion enhancement part in figure main body, described Adhesion enhancement part is arranged in figure main body equably, and in array distribution, line number is 3 ~ 10 row, and columns is 3 ~ 10 row.
Further provide a kind of structure of concrete Adhesion enhancement part, in each Adhesion enhancement part, opening diaphragm area is 2 ~ 20, and non-diaphragm area of opening is 1 ~ 19, and non-diaphragm area of opening is opened between diaphragm area at two.
After have employed technique scheme, non-diaphragm area of opening is passivating film completely, and laser does not open film, effectively can ensure the passivation effect in back electrode region, make battery efficiency unaffected; Opening diaphragm area is silicon substrate completely, passivating film is removed by laser completely, effectively can improve the contact of back electrode and silicon chip, the back electrode problem of coming off improves, and Ag-Si ohmic contact can be formed, maintain battery conversion efficiency on the one hand unaffected, the La Tuoli hidden danger on the one hand after components welding is resolved, non-diaphragm area ratio of opening suitably can adjust according to designed back electrode width and length, and generally account for Adhesion enhancement part 0 ~ 60% is advisable.
Accompanying drawing explanation
Fig. 1 is the structural representation of photovoltaic cell backside laser Grooving patterns structure of the present utility model;
Fig. 2 is the A portion enlarged drawing in Fig. 1.
Embodiment
In order to make content of the present utility model more easily be clearly understood, below according to concrete case study on implementation also by reference to the accompanying drawings, the utility model is described in further detail.
As shown in Figure 1, 2, a kind of photovoltaic cell backside laser Grooving patterns structure, it comprises figure main body, and figure main body has:
Many be parallel to each other open film line segment 1; It also can be phantom line segments;
Multiple Adhesion enhancement part 2, Adhesion enhancement part 2 has for adhering to opening diaphragm area 21 and opening diaphragm area 22 for adhering to the non-of passivating film of silicon substrate, and opens diaphragm area 21 and Fei Kai diaphragm area 22 and to be distributed in distance shape.
As shown in Figure 1, film line segment 1 and Adhesion enhancement part 2 is opened in mutual vertical configuration.
As shown in Figure 1, Adhesion enhancement part 2 has 12, and in four lines three column-shaped, Adhesion enhancement part 2 is arranged in figure main body equably.Certainly, it can also by other array distribution shape structures, and line number is 3 ~ 10 row, and columns is in 3 ~ 10 row.
As shown in Figure 2, in each Adhesion enhancement part 2, opening diaphragm area 21 is five sections, and non-diaphragm area 22 of opening is four sections, and non-diaphragm area 22 of opening is opened between diaphragm area 21 at two.Certainly, it can also be other hop counts, and in each Adhesion enhancement part 2, opening diaphragm area 21 is 2 ~ 20, and non-diaphragm area 22 of opening is 1 ~ 19, and non-diaphragm area 22 of opening is opened between diaphragm area 21 at two.
Operation principle of the present utility model is as follows:
Non-diaphragm area 22 of opening is passivating film completely, and laser does not open film, effectively can ensure the passivation effect in back electrode region, make battery efficiency unaffected; Opening diaphragm area 21 is silicon substrate completely, passivating film is removed by laser completely, effectively can improve the contact of back electrode and silicon chip, Ag-Si ohmic contact can be formed, non-diaphragm area ratio of opening suitably can adjust according to designed backplane width and length, and generally account for Adhesion enhancement part 0 ~ 60% is advisable.
Above-described concrete case study on implementation; technical problem, technical scheme and beneficial effect that the utility model solves are further described; be understood that; the foregoing is only concrete case study on implementation of the present utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (4)
1. a photovoltaic cell backside laser Grooving patterns structure, is characterized in that, it comprises figure main body, and figure main body has:
Many be parallel to each other open film line segment or phantom line segments (1);
Multiple Adhesion enhancement part (2), described Adhesion enhancement part (2) has for adhering to opening diaphragm area (21) and opening diaphragm area (22) for adhering to the non-of passivating film of silicon substrate, and opens diaphragm area (21) and non-diaphragm area (22) of opening is distributed in distance shape.
2. photovoltaic cell backside laser Grooving patterns structure according to claim 1, is characterized in that: described opens film line segment or phantom line segments (1) and Adhesion enhancement part (2) in mutual vertical configuration.
3. photovoltaic cell backside laser Grooving patterns structure according to claim 1 and 2, it is characterized in that: described Adhesion enhancement part (2) is arranged in figure main body equably, distribute in array-like, line number is 3 ~ 10 row, and columns is 3 ~ 10 row.
4. photovoltaic cell backside laser Grooving patterns structure according to claim 1 and 2, it is characterized in that: in each Adhesion enhancement part (2), opening diaphragm area (21) is 2 ~ 20, non-diaphragm area (22) of opening is 1 ~ 19, and non-diaphragm area (22) of opening is positioned at two and opens between diaphragm area (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520092909.4U CN204391125U (en) | 2015-02-09 | 2015-02-09 | Photovoltaic cell backside laser Grooving patterns structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520092909.4U CN204391125U (en) | 2015-02-09 | 2015-02-09 | Photovoltaic cell backside laser Grooving patterns structure |
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| CN204391125U true CN204391125U (en) | 2015-06-10 |
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| CN201520092909.4U Active CN204391125U (en) | 2015-02-09 | 2015-02-09 | Photovoltaic cell backside laser Grooving patterns structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039546A (en) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107093636A (en) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107093637A (en) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
-
2015
- 2015-02-09 CN CN201520092909.4U patent/CN204391125U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039546A (en) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107093636A (en) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107093637A (en) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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| CP03 | Change of name, title or address |